Teses / dissertações sobre o tema "Light emitters in silicon"
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Shakoor, Abdul. "Silicon nanocavity light emitters at 1.3-1.5 µm wavelength". Thesis, University of St Andrews, 2013. http://hdl.handle.net/10023/3673.
Texto completo da fonteGermer, Susette. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172306.
Texto completo da fontePotfajova, J. "Silicon based microcavity enhanced light emitting diodes". Forschungszentrum Dresden-Rossendorf, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-27756.
Texto completo da fonteZabel, Thomas [Verfasser], Gerhard [Akademischer Betreuer] Abstreiter, Jonathan J. [Akademischer Betreuer] Finley e Bougeard [Akademischer Betreuer] Dominique. "Study on silicon-germanium nanoislands as emitters for a monolithic silicon light source / Thomas Zabel. Gutachter: Jonathan J. Finley ; Bougeard Dominique ; Gerhard Abstreiter. Betreuer: Gerhard Abstreiter". München : Universitätsbibliothek der TU München, 2012. http://d-nb.info/103155176X/34.
Texto completo da fontePotfajova, J. "Silicon based microcavity enhanced light emitting diodes". Forschungszentrum Dresden-Rossendorf, 2009. https://hzdr.qucosa.de/id/qucosa%3A21604.
Texto completo da fontePotfajova, Jaroslava. "Silicon based microcavity enhanced light emitting diodes". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25451.
Texto completo da fonteGermer, Susette [Verfasser], Lars [Akademischer Betreuer] Rebohle, Wolfgang [Akademischer Betreuer] Skorupa, Johannes [Akademischer Betreuer] Heitmann e Manfred [Akademischer Betreuer] Helm. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters / Susette Germer. Gutachter: Johannes Heitmann ; Manfred Helm. Betreuer: Lars Rebohle ; Wolfgang Skorupa". Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://d-nb.info/1075123712/34.
Texto completo da fonteGermer, Susette Verfasser], Lars [Akademischer Betreuer] [Rebohle, Wolfgang [Akademischer Betreuer] Skorupa, Johannes [Akademischer Betreuer] Heitmann e Manfred [Akademischer Betreuer] Helm. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters / Susette Germer. Gutachter: Johannes Heitmann ; Manfred Helm. Betreuer: Lars Rebohle ; Wolfgang Skorupa". Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://d-nb.info/1075123712/34.
Texto completo da fonteArciniegas, Carlos Andres Gonzalez. "Properties of the light emitted by a silicon on-chip optical parametric oscillator (OPO)". Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-22112017-153330/.
Texto completo da fonteO oscilador paramétrico ótico (OPO) tem sido uma fonte muito versátil de estados não clássicos da luz. A configuração usual destes OPOs consiste em um cristal macroscópico com não linearidade de segunda ordem no interior de uma cavidade ótica. Recentemente, devido ao desenvolvimento da fotonica de silício, foi possível a implementação de micro- cavidades óticas e OPOs que possuem varias vantagens sobre OPOs usuais. Não entanto a não linearidade destes sistemas é de terceira ordem. Neste trabalho, descrevemos teoricamente as propriedades quânticas da luz gerada num OPO com não linearidade de terceira ordem. Mostra-se que os efeitos de modulação de fase (não presentes na não linearidade de segunda ordem) e a dispersão são determinantes para a geração e o emaranhamento produzido no sistema. Emaranhamento bi e tri partito foi predito teoricamente usando o formalismo de modos de Schmidt. Também foi feita uma descrição quando mais modos da cavidade são excitados gerando um pente de frequência. Nesta situação. e utilizando novamente o formalismo de modos de Schmidt, foi predito emaranhamento multimodo destes sistemas.
Lai, Jiun-Hong. "Development of low-cost high-efficiency commercial-ready advanced silicon solar cells". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/52234.
Texto completo da fonteBates, R. "Silicon heterostructure intersubband emitters". Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596474.
Texto completo da fonteKrishnan, Jagadamma Lethy. "Characterisation of nanostructured light emitters". Thesis, University of Strathclyde, 2012. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=17192.
Texto completo da fonteStevens, Renaud. "Modulation Properties of Vertical Cavity Light Emitters". Doctoral thesis, Stockholm : Tekniska högsk, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3240.
Texto completo da fonteWölfl, Friedrich. "Intensity noise studies of semiconductor light emitters". Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342990.
Texto completo da fonteChen, Li. "SILICON CARBIDE PRESSURE SENSORS AND INFRA-RED EMITTERS". Case Western Reserve University School of Graduate Studies / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=case1195161915.
Texto completo da fonteTomczak, Nikodem. "Single light emitters in the confinement of polymers". Enschede : University of Twente [Host], 2005. http://doc.utwente.nl/57484.
Texto completo da fonteFu, Wai-yuen, e 傅惠源. "A comprehensive approach to high efficiency light emitters". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B42841537.
Texto completo da fontepublished_or_final_version
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Girgel, Ionut. "Development of InGaN/GaN core-shell light emitters". Thesis, University of Bath, 2017. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.720648.
Texto completo da fonteWoodhead, Christopher Stephen. "Enhancing the light output of solid state emitters". Thesis, Lancaster University, 2017. http://eprints.lancs.ac.uk/88416/.
Texto completo da fonteFu, Wai-yuen. "A comprehensive approach to high efficiency light emitters". Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B42841537.
Texto completo da fonteGold, Daniel Patrick. "Transmission electron microscope studies of emitters of silicon bipolar transistors". Thesis, University of Oxford, 1989. http://ora.ox.ac.uk/objects/uuid:ec5f58c3-ced6-44fe-8f1f-d042cdb7b7b7.
Texto completo da fonteLaws, Gerard Michael. "Design and processing of gallium nitride based light emitters". Thesis, University of Nottingham, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326522.
Texto completo da fonteZHOU, XIANGYU. "Physics-based multiscale modeling of III-nitride light emitters". Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2639710.
Texto completo da fonteGarner, D. M. "Silicon heterojunction bipolar transistors with wide band-gap amorphous semiconductor emitters". Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599324.
Texto completo da fonteHeuser, Eike [Verfasser]. "Light-Emitting Polymers with On-Chain Triplet Emitters / Eike Heuser". Wuppertal : Universitätsbibliothek Wuppertal, 2016. http://d-nb.info/1104187329/34.
Texto completo da fonteCrutchley, Benjamin G. "Investigation into the efficiency limitations of InGaN-based light emitters". Thesis, University of Surrey, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.583342.
Texto completo da fonteSeiferth, Frederick J. "Light emission from silicon /". Online version of thesis, 1994. http://hdl.handle.net/1850/11444.
Texto completo da fonteHaneder, Stephan. "Correlation Between Electronic Structure and Light Emission Properties in Phosphorescent Emitters". Diss., lmu, 2010. http://nbn-resolving.de/urn:nbn:de:bvb:19-110988.
Texto completo da fonteSilverstone, Joshua Wimbridge. "Entangled light in silicon waveguides". Thesis, University of Bristol, 2015. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.685546.
Texto completo da fonteMarconi, Alessandro. "Silicon Nanocrystal Based Light Emitting Devices for Silicon Photonics". Doctoral thesis, Università degli studi di Trento, 2011. https://hdl.handle.net/11572/369171.
Texto completo da fonteMarconi, Alessandro. "Silicon Nanocrystal Based Light Emitting Devices for Silicon Photonics". Doctoral thesis, University of Trento, 2011. http://eprints-phd.biblio.unitn.it/630/1/Tesi_PhD_Marconi_Alessandro.pdf.
Texto completo da fonteFrey, Alexander [Verfasser]. "Industrial n-Type Silicon Solar Cells with Co-Diffused Boron Emitters / Alexander Frey". Konstanz : Bibliothek der Universität Konstanz, 2018. http://d-nb.info/1161342966/34.
Texto completo da fonteFernández, Robledo Susana [Verfasser], e Eicke [Akademischer Betreuer] Weber. "Laser-induced forward transfer based boron selective emitters for crystalline silicon solar cells". Freiburg : Universität, 2021. http://d-nb.info/122665715X/34.
Texto completo da fonteLiang, Yu-Han. "Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures". Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/1008.
Texto completo da fonteGalata, Sotiria. "Sulphur doped silicon light emitting diodes". Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/842933/.
Texto completo da fonteSiddiqui, Saiful Anam. "Erbium doped silicon light emitting diodes". Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843408/.
Texto completo da fonteSquire, E. K. "Light emitting microstructures in porous silicon". Thesis, University of Bath, 1999. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285287.
Texto completo da fonteWang, Junjun [Verfasser]. "Three-dimensional InGaN/GaN based light emitters with reduced piezoelectric field / Junjun Wang". Ulm : Universität Ulm, 2018. http://d-nb.info/1158664257/34.
Texto completo da fonteO'Regan, Bryan J. "Resonantly enhanced thermal emitters based on nanophotonic structures". Thesis, University of St Andrews, 2015. http://hdl.handle.net/10023/7801.
Texto completo da fonteXuan, Guangchi. "The fabrication and characterization of high temperature Terahertz emitters, and DNA-sensitive transistors based on silicon-germanium and silicon carbide materials". Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 138 p, 2008. http://proquest.umi.com/pqdweb?did=1459914001&sid=11&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Texto completo da fonteLalic, Nenad. "Light emitting devices based on silicon nanostructures". Doctoral thesis, KTH, Electronic Systems Design, 2000. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2943.
Texto completo da fonteAlthough silicon is the dominant semiconductor today, lightemitting devices are currently based on compound semiconductorsdue to their direct band-gap, which promotes fast radiativerecombination. However, in nanometer-size silicon structures,carrier confinement enhances the radiative recombination,while, at the same time, suppresses diffusion to non-radiativerecombination centra, resulting in a significant increase inlight emission efficiency. Moreover, the band-gap is wideningas the crystal size is reduced (quantum confinement), enablinglight emission in the visible range. In this work, twodifferent approaches to manufacture a light emitting diode(LED) in silicon have been investigated. The first type ofsilicon LED's is based on porous silicon (PSi) and manufacturedby electrochemical etching of a previously formed pn diodestructure. After optimizing the etching process, PSi LED's wereproduced with an external quantum efficiency of ~0.2% underpulsed excitation, more than an order of magnitude higher thanpreviously reported. Tunability of the emission wavelength inthe range 1.6-2eV was demonstrated by varying the etchingparameters. The EL wavelength is determined by the band-gap ofthe nanocrystals, i. e. their size, as evidenced by a lowerthreshold for longer EL wavelengths, due to lower barriers forinjection into larger crystallites. The EL decay after the biaspulse follows a stretched exponential shape, in agreement witha model involving exciton migration in partially interconnectednanocrystals. Under constant bias, the EL and forward currentare decreasing, due to charging, caused by carrier trapping inthe porous network. After the etching the hydrogen passivatedporous silicon surface is being gradually oxidized, resultingin increased barriers, permanent conductivity reduction and ELdegradation. To improve stability, the second LED approach,based on Si nanocrystals embedded in SiO2, was studied. Nanocrystals were formed by theimplantation of Si into thermally grown SiO2and by subsequent annealing at high temperatures(mostly 1100°C). Photoluminescence investigation showedthat luminescence properties are dependent on nanocrystal sizeand similar to those of PSi. However, decay shapes and timeconstants revealed a stronger isolation of the nanocrystalsthan in PSi. For the EL, good current transport properties werenecessary. That required a thin SiO2layer and efficient injection, realized using anin-situ doped poly-Si cap layer. The Si nanocrystal LED's werestable, although the total light intensity was lower than inPSi, as a consequence of a thin active layer.
Key words: Electroluminescence, photoluminescence, lightemitting diode, porous materials, nanostructured materials,silicon, etching, anodized layers, ion implantation.
Pitanti, Alessandro. "Light-matter interaction in silicon nanophotonic structures". Doctoral thesis, Università degli studi di Trento, 2010. https://hdl.handle.net/11572/368665.
Texto completo da fontePitanti, Alessandro. "Light-matter interaction in silicon nanophotonic structures". Doctoral thesis, University of Trento, 2010. http://eprints-phd.biblio.unitn.it/208/1/Pitanti_PhDThesis.pdf.
Texto completo da fonteWang, Michael Wei-Ching McGill T. C. "Graded injector, wide bandgap light emitters and XPS studies of the InAs/GaSb heterointerface /". Diss., Pasadena, Calif. : California Institute of Technology, 1995. http://resolver.caltech.edu/CaltechETD:etd-10262007-091414.
Texto completo da fonteRahman, Tasmiat. "Light trapping structures for photovoltaics using silicon nanowires and silicon micro-pyramids". Thesis, Imperial College London, 2015. http://hdl.handle.net/10044/1/31858.
Texto completo da fonteFamiyeh, Lord. "Electrodeposition of Silicon in Fluoride Melts : Production of Silicon Films". Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-16344.
Texto completo da fonteSchiz, Frank Jochen Wilhelm. "The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors". Thesis, University of Southampton, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.287345.
Texto completo da fonteHU, CHENXI. "Simulation studies and design of AlInGaN-ZnSiGeN2 quantum wells for high-efficiency ultraviolet light emitters". The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1589300145090549.
Texto completo da fonteAnutgan, Mustafa. "Nanocrystal Silicon Based Visible Light Emitting Pin Diodes". Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612718/index.pdf.
Texto completo da fonteTu, Hoang. "High efficient infrared-light emission from silicon LEDs". Enschede : University of Twente [Host], 2007. http://doc.utwente.nl/58014.
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