Bibliografias temáticas / Isolated gate driver

Literatura científica selecionada sobre o tema "Isolated gate driver"

Autor: Grafiati

Publicado: 25 de maio de 2024

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Artigos de revistas sobre o assunto "Isolated gate driver"

Gras, David, Christophe Pautrel, Amir Fanaei, Gregory Thepaut, Maxime Chabert, Fabien Laplace e Gonzalo Picun. "Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (1 de janeiro de 2014): 000206–13. http://dx.doi.org/10.4071/hitec-wp12.

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In this paper we present a highly integrated, high-temperature isolated, half-bridge power gate driver demo board, based on turnkey X-REL chipset: XTR26010 (High-Temperature Intelligent Gate Driver), XTR40010 (High-Temperature Isolated Two Channel Transceiver), XTR30010 (High-Temperature PWM Controller), and XTR2N0825 (High-Temperature 80V N-Channel Power MOSFET). The XTR26010 is the key circuit in this chipset for power gate drive application. The XTR26010 circuit has been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of high-temperature, high-voltage, and high-efficiency power transistors (SiC, GaN, Si) existing in the market. Furthermore, the XTR26010 circuit implements an unprecedented functionality for high-temperature drivers allowing safe operation at system level by preventing any cross-conduction between high-side and low-side switches, through isolated communication between high-side and low-side drivers. The XTR40010 is used for isolated data communication between a microcontroller or a PWM controller with the power driver (XTR26010). For supplying the half-bridge gate driver, a compact isolated flyback power supply has been developed thanks to the versatile voltage mode PWM controller XTR30010 and the XT2N0825 N-Channel MOSFET. The full system has been successfully tested while driving different brands of SiC MOSFETs up to Ta=200°C, 600kHz of switching frequency and 600V high-voltage bus (limited by isolation transformers used). The demo board presented can be easily modified to drive other SiC and GaN transistors available in the market. The 200°C limitation of the demo board is due to passives, PCB material, and the solder paste used. However, all X-REL active circuits have been qualified within specifications well above 230°C.

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Matalata, Hendi, e Rozlinda Dewi. "Desain Rangkaian Gate Driver Analog untuk Dual Mosfet Drivers". Jurnal Ilmiah Universitas Batanghari Jambi 21, n.º 2 (4 de julho de 2021): 714. http://dx.doi.org/10.33087/jiubj.v21i2.1534.

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Switching techniques have been continued to develop, including sinusoidal PWM, space vector PWM, current tracking PWM, harmonic elimination PWM and others. Each method has advantages and disadvantages, but the most commonly used methods are sinusoidal PWM and space vector PWM. PWM that is generated using a microcontroller or analog IC component generally has a maximum voltage value of 5V. To strengthen the PWM wave, a gate-driver circuit is needed, so that the PWM control wave is able to move the IGBT / MOSFET. On this paper, the design of gate driver circuit use An analog IC, which starts from the generation of two waves, namely a sinusoidal wave and a DC source to be compared (Comparator) so that it can produce a PWM wave. Then this PWM wave is isolated using an optocoupler and MOSFET driver IC to limit interference in the switching process on high power supplies. Based on the results, it can be cancluded PWM control wave output from the gate-driver circuit is isolated from the system intended for designing a power converter and other applications.

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Kuo, Hsuan-Yu, e Jau-Jr Lin. "Development of Miniaturized Monolithic Isolated Gate Driver". Advances in Science, Technology and Engineering Systems Journal 6, n.º 5 (setembro de 2021): 177–84. http://dx.doi.org/10.25046/aj060520.

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Garcia, Jorge, Sarah Saeed, Emre Gurpinar e Alberto Castellazzi. "A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers". Electronics 10, n.º 2 (13 de janeiro de 2021): 159. http://dx.doi.org/10.3390/electronics10020159.

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This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

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Doucet, Jean-Christophe, Aimad Saib, Christian Mourad, François Piette, Etienne Vanzieleghem e Pierre Delatte. "HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW Converters". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1 de janeiro de 2011): 000145–51. http://dx.doi.org/10.4071/hiten-paper3-jcdoucet.

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This paper presents HADES® Gate Driver, a new solution that efficiently drives Silicon-Carbide (SiC) devices in multi-kW converters. It discusses how it allows taking full advantage of SiC technology by placing the gate driver circuits very close to the power transistors: The resulting lower parasitic inductances enable faster switching times and subsequently higher efficiency. Higher operating temperature for both the gate driver and the power transistors also translate into considerable reduction of complexity, size and weight of the system, in particular of the cooling systems. Finally, the paper describes how HADES® reference design is built from a new chipset especially developed for this purpose and designed to operate up to 225°C: THEMIS, ATLAS and RHEA.

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Muhammad, Khairul Safuan, e Dylan Dah-Chuan Lu. "Magnetically Isolated Gate Driver With Leakage Inductance Immunity". IEEE Transactions on Power Electronics 29, n.º 4 (abril de 2014): 1567–72. http://dx.doi.org/10.1109/tpel.2013.2279548.

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Zhao, Weichuan, Sohrab Ghafoor, Gijs Willem Lagerweij, Gert Rietveld, Peter Vaessen e Mohamad Ghaffarian Niasar. "Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations". Electronics 13, n.º 8 (13 de abril de 2024): 1481. http://dx.doi.org/10.3390/electronics13081481.

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This paper comprehensively reviews several techniques that address the static and dynamic voltage balancing of series-connected MOSFETs. The effectiveness of these techniques was validated through simulations and experiments. Dynamic voltage-balancing techniques include gate signal delay adjustment methods, passive snubbers, passive clamping circuits, and hybrid solutions. Based on the experimental results, the advantages and disadvantages of each technique are investigated. Combining the gate-balancing core method with an RC snubber, which has proven both technically and commercially attractive, provides a robust solution. If the components are sorted and binned, voltage-balancing techniques may not be necessary, further enhancing the commercial viability of series-connected MOSFETs. An investigation of gate driver topologies yields one crucial conclusion: magnetically isolated gate drivers offer a simple and cost-effective solution for high-frequency (HF) applications (2.5–50 kHz) above 8 kV with an increased number of series devices. Below 8 kV, it is advantageous to move the isolation barrier from the gate drive IC to an optocoupler and isolated supply, allowing for a simple design with commercially available components.

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Mayorga, J. Valle, C. Gutshall, K. Phan, I. Escorcia, H. A. Mantooth, B. Reese, M. Schupbach e A. Lostetter. "High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1 de janeiro de 2011): 000152–58. http://dx.doi.org/10.4071/hiten-paper4-jmayorga.

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SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

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Makki, Loreine, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot e Julien Weckbrodt. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs". Energies 14, n.º 13 (27 de junho de 2021): 3866. http://dx.doi.org/10.3390/en14133866.

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Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a route to common-mode(CM) currents. This paper will simulate, via ANSYS Q3D Extractor, the unforeseen parasitic effects of a pulse planar transformer integrated in a SiC MOSFET gate-driver card. Moreover, the pulse transformer will be ameliorated by adding distinctive shielding layers aiming to suppress CM noise effects and endure high dv/dt occurrences intending to validate experimental tests. The correlation between stray capacitance and dv/dt immunity results after shielding insertion will be reported.

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Sugano, Ryoko, Yuchong Sun e Hiroo Sekiya. "High-frequency resonant gate driver with isolated class-E amplifier". Nonlinear Theory and Its Applications, IEICE 9, n.º 3 (2018): 358–73. http://dx.doi.org/10.1587/nolta.9.358.

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Mais fontes

Teses / dissertações sobre o assunto "Isolated gate driver"

Laspeyres, Antoine. "Etude et conception d’un « Intelligent Power Module (IPM) » forte puissance en technologie SiC : développement du Gâte Driver". Electronic Thesis or Diss., Nantes Université, 2023. http://www.theses.fr/2023NANU4036.

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L’aéronautique tend à hybrider la propulsion et à électrifier de plus en plus de fonctions. Ceci entraîne une augmentation de la tension du réseau de bord HVDC afin de répondre à ces nouvelles contraintes sur les réseaux et systèmes électroniques. Pour atteindre ces objectifs, les nouveaux composants à semi-conducteurs de puissance SiC en calibre 3.3kV semblent être une alternative pro- metteuse à la filière Silicium IGBT. Cependant, leur faible maturité par rapport à la technologie Si est le principal frein à leur implémentation dans les réseaux de bords. Les travaux de recherche s’inscrivent dans le projet RA- PID AM-PM. L’objectif du projet est de concevoir un module de puissance bras d’onduleur 3,3kV@500A en technologie SiC en apportant une rupture technologique sur le packaging de puissance et son monitoring. Les travaux de recherche concernent le développement d’un circuit de commande intelligent permettant de fiabiliser le module de puissance et d’assurer des commutations sécurisées du semiconducteur. A partir des études sur la fiabilité des compo- sants SiC, deux indicateurs de vieillissement ont été identifiés, la résistance à l’état passant du module et le courant de fuite de grille du composant semiconducteur. Des circuits de surveillance embarqués de ces indicateurs ont été proposés et une nouvelle topologie de com- mande des semiconducteurs, le source driver, est proposée afin de rendre ces circuits compatibles. Pour finir, un démonstrateur spécialement conçu pour le module AM-PM est testé sur module SiC
Aeronautics tend to hybridize propulsion and electrify more and more functions on board. This leads to an increase in the voltage of the onboard network in order to meet these new constraints from electronic systems. To achieve these objectives, the new 3.3kV-rating SiC power semiconductor components seem to be a promising alternative to the Silicon IGBT sector. However, SiC technology’s low level of maturity compared to Si technol- ogy is the main obstacle to its implementation. The research work is part of the AM-PM RAPID project. The project objective is to design a 3.3kV@500A inverter arm power module in SiC technology by providing a technological break- through in power packaging and its monitoring. The research work focuses on the development of the gate driver and its intelligent functions to make the power module more reliable and to ensure secure switching of the semiconductor. From studies on the SiC component’s reliability, two aging indicators have been identified, the on-state resistance of the module and the gate leakage current of the semiconductor compo- nent. On-board monitoring circuits for these in- dicators have been proposed and a new semi- conductor control topology, the source driver, is proposed in order to make these circuits com- patible. Finally, a demonstrator specially de- signed for the AM-PM module is tested on a SiC module

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Wanderoild-Morand, Yohan. "Enfouissement d’une alimentation isolée sous contraintes de température et d’isolation". Thesis, Lyon, 2018. http://www.theses.fr/2018LYSE1193/document.

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Certaines applications haute température telles que le forage, l’aéronautique ou l’aérospatial, amènent à repenser la conception des alimentations isolées permettant la commande des éléments de puissance. Ce mémoire s’articule autour de l’étude de la faisabilité et de l’enfouissement d’un convertisseur isolé possédant une forte isolation statique (10kV) et dynamique (<10 pF), pouvant travailler sous de hautes températures (>250°C), dans les gammes de tension de sortie de la dizaine de volts et de puissance de l’ordre du Watt. Pour ne pas être contraint par la température de Curie d’un matériau magnétique, cette alimentation DC/DC se base sur un transformateur à air. Dans un premier temps, cette thèse détaille l’origine, la mesure et l’estimation des éléments du modèle électrique choisi pour le transformateur. Ensuite, afin de maximiser la transmission de puissance, nous constituons un système résonnant en ajoutant des condensateurs en parallèle ou en série avec le transformateur, puis nous développons une méthode permettant d’accorder l’ensemble. La comparaison entre les topologies nous amène ensuite à choisir compensation série-série. Puis nous constatons que la technologie choisie pour les condensateurs, la contrainte d’isolation statique et dynamique peuvent diviser par plus de deux la puissance transmise au travers d’une surface. Enfin, nous abordons comment redresser et réguler la tension de sortie sans affecter la résonnance ou l’isolation apportée, tout en minimisant les pertes générées. Une dernière partie montre que, moyennant un système de dissipation un processus de fabrication adapté, il est possible d’intégrer la structure complète sur silicium
High temperature applications such as deep drilling, aeronautics or aerospace, lead to rework the isolated power supplies used for the control of the power elements. This work study the feasibility of an embedded converter with high static (10kV) and dynamic (<10 pF) insulation, able to work under high temperatures (> 250 ° C), in the ranges of dozens volts for the output voltage and several Watt of transmitted power. To avoid being constrained by a magnetic material Curie temperature of, we use a coreless transformer based DC/DC power supply. First of all, this thesis details the origin, the measurement and the estimation of the elements of the chosen transformer electric model. Then, to maximize the transferred power, we form a resonant structure by adding capacitors in parallel or in series with the transformer, then we develop a method to tune the whole. The comparison between the topologies leads us to choose a serial-serial compensation. Then we note that the technology chosen for capacitors, the static and dynamic insulation constraint can divide by more than two the power transmitted through a surface. Finally, we discuss how to rectify and regulate the output voltage without affecting the resonance or insulation provided, while minimizing the losses generated. A last part exhibit that with a suitable dissipation system and manufacturing process, it is possible to integrate the complete structure on silicon chips

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Tan, Zheyuan. "Four-Output Isolated Power Supply for the Application of IGBT Gate Drive". Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/32925.

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This thesis focuses on the design issues of the multiple-output boost full-bridge converter, which is constructed by cascading the boost regulator with the inductor-less full-bridge converter. The design of the boost regulator has been proposed briefly with component selection and compensator design. After that, the inductor-less full-bridge converter is analyzed extensively. In the first place, the operation principle of the inductor-less full-bridge converter is introduced. Later, the effect of parasitic resistance and inductance is analyzed in an L-R series circuit model as step-response, which relates the drop of output voltage to the load current. Then, the effects of the dc blocking capacitor for the unbalanced load condition and unbalanced duty cycle are tackled. The theoretical results are compared with the experimental results and the simulation results to verify the relationship between the output voltage drop and load current. The overall efficiency of the converter is tested under various conditions.

The design of the planar transformer is critical to limit the profile of the converter and the leakage phenomenon. A planar transformer fit for the inductor-less full-bridge converter is designed and analyzed in 3D FEA software. An N-port transformer model is proposed to implement the inductance matrix into the leakage inductance matrix for circuit analysis. Based on this N-port model several measurements to extract the parameters in this model are proposed, where only the impedance analyzer is needed. Finally, the effects of trace layout and encapsulation on breakdown voltage in PCB are summarized from experimental results.
Master of Science

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Lin, Kai-Chieh, e 林楷傑. "Design of Isolated Gate Driver with Voltage Level Shifter". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/pr3bq6.

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碩士
國立彰化師範大學
電機工程學系
106
Abstract This study introduces an isolated gate driver design using the TSMC highvoltage (HV) bulk 0.25-μm CMOS process. The isolated gate driver design with a voltage level shifter can effectively reduce input drive voltage requirements and the overall energy needed to the power gate drivers. This study also details the on-chip transformer and on-chip inductor used. The structure of the on-chip transformer comprises a stacked transformer (featuring increased coupling rate) and a tapped transformer (featuring superior voltage isolation). The circuit designed in this study will use the TSMC high-voltage (HV) bulk 0.25-μm CMOS process to manufacture the wafers. Comparison of actual measurement and simulation shows that this circuit is feasible. Finally, the experimental results show that circuit with a voltage level shifter can indeed reduce the power required for the input and increase the circuit efficiency. Keywords : isolated gate driver ; voltage level shifter ; on-chip transformer ; on-chip inductor ; tapped transformer ; stacked transformer

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Livros sobre o assunto "Isolated gate driver"

Miley, Mike. Truth and Consequences. University Press of Mississippi, 2019. http://dx.doi.org/10.14325/mississippi/9781496825384.001.0001.

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Truth and Consequences interrogates the ways in which over two dozen works of fiction and film find meaning in the game show. Writers and filmmakers use the game show intermedially as a metaphor for what it means to be a person, a lover, a family, and a citizen in the media age. Despite media culture’s promises of global equality and connectivity (and one’s efforts to realize that promise), individuals wind up isolated by market-driven deception, wealth, or ethnicity. People use media to achieve greater intimacy with others, but the market nudges them to keep their distance from each other in the name of exploring options. Other networks can still assert themselves, such as the family, but can only sustain themselves if they openly defy and rewrite the rules of the media culture they inhabit. Although America espouses a commitment to democratic freedom, the state partners with imagemakers to make one’s lack of choice entertaining and resistance self-defeating. Amidst these obstacles, Americans still feel called upon to remember, to connect, to buzz in, to answer in the hopes that an escape awaits in the next round, behind the next door.

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Capítulos de livros sobre o assunto "Isolated gate driver"

Shreya, C., G. Praveen Kumar, Vikhyath D. Amin e K. Suryanarayana. "Design and Development of Multi-output Isolated Supply for SiC MOSFET Gate Driver Using Flyback Topology". In Lecture Notes in Electrical Engineering, 403–18. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0626-0_32.

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Madlberger, Maria. "Theoretical Foundations of Inter-Organizational Information Systems". In Inter-Organizational Information Systems and Business Management, 33–49. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60960-768-5.ch003.

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Research on Inter-Organizational Information Systems (IOIS) provided many insights, which, however, are very fragmented in terms of applied theories. This results in a quite isolated understanding of single aspects of IOIS rather than a comprising approach to the research subject. To address these shortcomings, the chapter investigates seven theories in respect of their explanation of IOIS adoption and use, its drivers, IOIS-based collaboration between firms, and benefits and costs of IOIS. The applied theories are social exchange theory and embeddedness theory (organization theories), transaction cost theory and agency theory (economics-related theories), the resource-based view of the firm and network theory (strategic management approaches), and game theory. The findings and the resulting framework imply that all these theories lead to similar recommendations on the use of IOIS although they have very diverse assumptions and lines of argumentation. The chapter stresses that the investigated theories supplement rather than contradict each other.

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A. Rmila, Salahaldein. "Automatic Current Sharing Mechanism in Two-phase Series Capacitor Buck DC-DC Converter (2-pscB)". In Power Electronics, RF, and Microwave Engineering [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.107975.

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In this chapter, we introduce the concept of the Inherited Automatic Current Sharing Mechanism (ACSM) in a two-phase series capacitor buck topology (2-pscB). This topology was introduced to power laptops as low-voltage and high-current Voltage Regulator Modules as well as non-isolated Point-of-Load converters (Vin < 12 V). To satisfy the converter stability, a state-space modeling technique of switching intervals coupled with parasitic component linearization is developed. Due to the series capacitor charging period miscalculation, the applicability of the ACSM of 2-pscB switching topology for high-power electronic applications is still very limited. Inserting a series capacitor between power switches of phase A increases loop parasitic inductance, introduces a time delay mismatch between the gate voltages of the two switches, and causes interference with the synchronization of the dead time between both phases of 2-pscB converters since the phase B has no series capacitor. This mismatch reduces the heat distribution efficiency and lifetime. As such, a complete model study delivered by the converter is required to design a robust controller. Driven to explore the series capacitor voltage feedback mechanism, frequency analysis of transfer functions, and filter behavior with experimental prototype examples (Vin < 120 V) have been presented for the first time to demonstrate the theoretical analysis. Obtained efficiency was up to 94.9% at full load.

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Garmer, D. R., e D. R. Garmer. "Potential energies for the reaction F + H2 HF + H by the random walk method". In Quantum Monte Carlo, 53. Oxford University PressNew York, NY, 2007. http://dx.doi.org/10.1093/oso/9780195310108.003.0056.

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Abstract If the reaction H + H2 H2 + H is number one on the list of interesting chemical reactions, then number two is the reaction F + H2 HF + H. It is very fast, it is highly exothermic, it drives chemical lasers, it can be studied in crossed molecular beams, it can be studied by infrared spectroscopy, and it involves only 11 electrons. This paper, and its companion paper a year earlier, report fixed-node diffusion QMC calculations of the ground-state potential energy surface for the F-H-H systems, with emphasis on the region of the barrier to reaction. At the time this work was completed, it was clear from experiments that the barrier height must be in the range of 1 to 2 kcal/mol. Calculations by a variety of methods gave barrier heights in the range of 1 to 6 kcal/mole for collinear reactions. More recent high-level calculations, QMC and others, place the collinear barrier at about 3 kcal/mol, with a lower height of about 2 kcal/mol for slightly bent configurations. The QMC calculations were fixed-node diffusion calculations with importance sampling, using single-determinant trial functions with orbitals represented by cubic spline functions fit to Gaussian orbitals. Recovery of correlation energy was about 96% for the isolated F atom and for the HF molecule. Total energies for reactions and products were about 40 kcal/mol lower than the lowest energy

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Trabalhos de conferências sobre o assunto "Isolated gate driver"

Kuo, Hsuan-Yu, e Jau-Jr Lin. "Implementation of Miniaturized Monolithic Isolated Gate Driver". In 2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE). IEEE, 2020. http://dx.doi.org/10.1109/ecice50847.2020.9301940.

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Nagai, Shuichi, Yasufumi Kawai, Osamu Tabata, Hideaki Fujiwara, Noboru Negoro, Masahiro Ishida e Nobuyuki Otsuka. "A Drive-by-Microwave isolated gate driver with gate current charge for IGBTs". In 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe). IEEE, 2014. http://dx.doi.org/10.1109/epe.2014.6910757.

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Bin Zhao, Haihong Qin, Xin Nie e Yangguang Yan. "Evaluation of isolated gate driver for SiC MOSFETs". In 2013 IEEE 8th Conference on Industrial Electronics and Applications (ICIEA 2013). IEEE, 2013. http://dx.doi.org/10.1109/iciea.2013.6566550.

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Nagai, Shuichi, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka e Daisuke Ueda. "A one-chip isolated gate driver with Drive-by-Microwave technologies". In 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). IEEE, 2012. http://dx.doi.org/10.1109/rfit.2012.6401648.

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Jau Lin e Kai-Chieh Lin. "A monolithic isolated gate driver with on-chip transformer". In 2017 IEEE 3rd International Future Energy Electronics Conference (IFEEC) and ECCE Asia. IEEE, 2017. http://dx.doi.org/10.1109/ifeec.2017.7992223.

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Li, Xinyi, Zehua Chen, Ziyuan Chu, Taijia Zhang, Yuyin Sun, Yimeng Zhang e Yuming Zhang. "CMTI Improvement Circuit for SiC MOSFET Isolated Gate Driver". In 2023 4th International Conference on Advanced Electrical and Energy Systems (AEES). IEEE, 2023. http://dx.doi.org/10.1109/aees59800.2023.10469131.

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Noor, S. Z. Mohammad, M. F. Yusof, A. M. Omar, A. H. Faranadia e M. A. Mohd Radzi. "Hardware design of magnetically isolated gate driver using Insulated Gate Bipolar Transistor (IGBT)". In 2017 IEEE 8th Control and System Graduate Research Colloquium (ICSGRC). IEEE, 2017. http://dx.doi.org/10.1109/icsgrc.2017.8070605.

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Wiesemann, Julius, e Axel Mertens. "An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters". In IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2021. http://dx.doi.org/10.1109/iecon48115.2021.9589774.

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Baoxing Chen. "Isolated half-bridge gate driver with integrated high-side supply". In 2008 IEEE Power Electronics Specialists Conference - PESC 2008. IEEE, 2008. http://dx.doi.org/10.1109/pesc.2008.4592516.

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Chen, Shaonan, Jing Xiao, Liwen Qin, Xiaoyong Yu, Wenlan Gong e Xiaorui Wu. "Design Of Isolated Gate Driver For Low Power Energy Harvesting". In 2023 IEEE 6th International Electrical and Energy Conference (CIEEC). IEEE, 2023. http://dx.doi.org/10.1109/cieec58067.2023.10167242.

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