Artigos de revistas sobre o tema "Instabilté de Vth"
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Senzaki, Junji, Atsushi Shimozato, Kazutoshi Kojima, Shinsuke Harada, Keiko Ariyoshi, Takahito Kojima, Yasunori Tanaka e Hajime Okumura. "Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces". Materials Science Forum 778-780 (fevereiro de 2014): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.521.
Texto completo da fonteTadjer, Marko J., Karl D. Hobart, Eugene A. Imhoff e Fritz J. Kub. "Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices". Materials Science Forum 600-603 (setembro de 2008): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1147.
Texto completo da fonteSometani, Mitsuru, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda e Hajime Okumura. "Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method". Materials Science Forum 821-823 (junho de 2015): 685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.685.
Texto completo da fonteNa, Jeong-Hyeon, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee et al. "Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors". Nanomaterials 14, n.º 5 (4 de março de 2024): 466. http://dx.doi.org/10.3390/nano14050466.
Texto completo da fonteKutsuki, Katsuhiro, Sachiko Kawaji, Yukihiko Watanabe, Masatoshi Tsujimura, Toru Onishi, Hirokazu Fujiwara, Kensaku Yamamoto e Takashi Kanemura. "Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs". Materials Science Forum 858 (maio de 2016): 607–10. http://dx.doi.org/10.4028/www.scientific.net/msf.858.607.
Texto completo da fonteSenzaki, Junji, Atsushi Shimozato, Kozutoshi Kajima, Keiko Aryoshi, Takahito Kojima, Shinsuke Harada, Yasunori Tanaka, Hiroaki Himi e Hajime Okumura. "Electrical Properties of MOS Structures on 4H-SiC (11-20) Face". Materials Science Forum 740-742 (janeiro de 2013): 621–24. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.621.
Texto completo da fonteKim, Sang Sub, Pyung Ho Choi, Do Hyun Baek, Jae Hyeong Lee e Byoung Deog Choi. "Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress". Journal of Nanoscience and Nanotechnology 15, n.º 10 (1 de outubro de 2015): 7555–58. http://dx.doi.org/10.1166/jnn.2015.11167.
Texto completo da fonteOkamoto, Mitsuo, Mitsuru Sometani, Shinsuke Harada, Hiroshi Yano e Hajime Okumura. "Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET". Materials Science Forum 897 (maio de 2017): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.897.549.
Texto completo da fonteDeb, Arkadeep, Jose Ortiz-Gonzalez, Mohamed Taha, Saeed Jahdi, Phillip Mawby e Olayiwola Alatise. "Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs". Materials Science Forum 1091 (5 de junho de 2023): 61–66. http://dx.doi.org/10.4028/p-lidhbt.
Texto completo da fonteRescher, Gerald, Gregor Pobegen e Thomas Aichinger. "Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs". Materials Science Forum 821-823 (junho de 2015): 709–12. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.709.
Texto completo da fonteLi, Shanjie, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang e Guoqiang Li. "Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress". Applied Physics Letters 121, n.º 6 (8 de agosto de 2022): 062101. http://dx.doi.org/10.1063/5.0094957.
Texto completo da fonteLi, Xiangdong, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan et al. "Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization". Micromachines 14, n.º 5 (12 de maio de 2023): 1042. http://dx.doi.org/10.3390/mi14051042.
Texto completo da fonteWu, Ruizhu, Simon Mendy, Nereus Agbo, Jose Ortiz Gonzalez, Saeed Jahdi e Olayiwola Alatise. "Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions". Energies 14, n.º 20 (19 de outubro de 2021): 6834. http://dx.doi.org/10.3390/en14206834.
Texto completo da fonteKoo, Sang-Mo, e Tae-Jun Ha. "Improved Photo-Induced Stability in Amorphous Metal-Oxide Based TFTs for Transparent Displays". Journal of Nanoscience and Nanotechnology 15, n.º 10 (1 de outubro de 2015): 7800–7803. http://dx.doi.org/10.1166/jnn.2015.11193.
Texto completo da fonteAsllani, Besar, Alberto Castellazzi, Dominique Planson e Hervé Morel. "Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs". Materials Science Forum 963 (julho de 2019): 184–88. http://dx.doi.org/10.4028/www.scientific.net/msf.963.184.
Texto completo da fonteGrossl Bade, Tamiris, Hassan Hamad, Adrien Lambert, Hervé Morel e Dominique Planson. "Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs". Electronics 12, n.º 11 (3 de junho de 2023): 2529. http://dx.doi.org/10.3390/electronics12112529.
Texto completo da fonteLiu, Han-Wen, Tzu-Cheng Hung e Bo-Xiang Huang. "(Digital Presentation) Instability of α-Si:H TFTs under Simultaneous Ultraviolet Light Illumination and Different Bias Stresses". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de outubro de 2022): 1262. http://dx.doi.org/10.1149/ma2022-02351262mtgabs.
Texto completo da fonteRescher, Gerald, Gregor Pobegen e Tibor Grasser. "Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress". Materials Science Forum 858 (maio de 2016): 481–84. http://dx.doi.org/10.4028/www.scientific.net/msf.858.481.
Texto completo da fonteGo, Donghyun, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim e Jeong-Soo Lee. "Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory". Micromachines 14, n.º 11 (28 de outubro de 2023): 2007. http://dx.doi.org/10.3390/mi14112007.
Texto completo da fonteElangovan, Surya, Stone Cheng e Edward Yi Chang. "Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications". Energies 13, n.º 10 (21 de maio de 2020): 2628. http://dx.doi.org/10.3390/en13102628.
Texto completo da fonteLEE, YONG K. "CONTROLLING INSTABILITIES OF HYDROGENERATED a-Si:H TFT UNDER BIAS TEMPERATURE STRESSING". Modern Physics Letters B 22, n.º 04 (10 de fevereiro de 2008): 263–68. http://dx.doi.org/10.1142/s0217984908014730.
Texto completo da fonteLee, Sangmin, Pyungho Choi, Minjun Song, Gaeun Lee, Nara Lee, Bohyeon Jeon e Byoungdeog Choi. "Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress". Journal of Nanoscience and Nanotechnology 21, n.º 8 (1 de agosto de 2021): 4277–84. http://dx.doi.org/10.1166/jnn.2021.19392.
Texto completo da fonteLee, Seung-Hun, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo-Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang e Jeong Hwan Kim. "Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications". Materials 12, n.º 1 (3 de janeiro de 2019): 137. http://dx.doi.org/10.3390/ma12010137.
Texto completo da fonteLim, Sang Chul, Seong Hyun Kim, Gi Heon Kim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Yong Suk Yang, Do Jin Kim e Tae Hyoung Zyung. "Instability of OTFT with Organic Gate Dielectrics". Solid State Phenomena 124-126 (junho de 2007): 407–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.407.
Texto completo da fonteDreger, Christian, e Jürgen Wolters. "Instabile Geldnachfrage im Euroraum?" Vierteljahrshefte zur Wirtschaftsforschung 76, n.º 4 (outubro de 2007): 85–95. http://dx.doi.org/10.3790/vjh.76.4.85.
Texto completo da fonteElangovan, Surya, Edward Yi Chang e Stone Cheng. "Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress". Energies 14, n.º 8 (13 de abril de 2021): 2170. http://dx.doi.org/10.3390/en14082170.
Texto completo da fonteGonzalez, Jose Ortiz, Olayiwola Alatise e Philip A. Mawby. "Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs". Materials Science Forum 963 (julho de 2019): 749–52. http://dx.doi.org/10.4028/www.scientific.net/msf.963.749.
Texto completo da fonteMurakami, Eiichi, Takahiro Furuichi, Tatsuya Takeshita e Kazuhiro Oda. "Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V". Materials Science Forum 924 (junho de 2018): 711–14. http://dx.doi.org/10.4028/www.scientific.net/msf.924.711.
Texto completo da fontePark, Jee Ho, Sohyung Lee, Hee Sung Lee, Sung Ki Kim, Kwon-Shik Park e Soo-Young Yoon. "Correlation between spin density and Vth instability of IGZO thin-film transistors". Current Applied Physics 18, n.º 11 (novembro de 2018): 1447–50. http://dx.doi.org/10.1016/j.cap.2018.08.016.
Texto completo da fonteWang, Kai Yu, Cai Ping Wan, Wen Hao Lu, Nian Nian Ge e Heng Yu Xu. "Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors". Key Engineering Materials 950 (31 de julho de 2023): 133–38. http://dx.doi.org/10.4028/p-fagd0d.
Texto completo da fonteIdris, Muhammad I., Ming Hung Weng, H. K. Chan, A. E. Murphy, Dave A. Smith, R. A. R. Young, Ewan P. Ramsay, David T. Clark, Nick G. Wright e Alton B. Horsfall. "Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors". Materials Science Forum 897 (maio de 2017): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.897.513.
Texto completo da fonteDreger, Christian, e Jürgen Wolters. "Hat die Finanzkrise zu einer instabilen Geldnachfrage geführt?" Vierteljahrshefte zur Wirtschaftsforschung 79, n.º 4 (outubro de 2010): 135–45. http://dx.doi.org/10.3790/vjh.79.4.135.
Texto completo da fonteLi, Jiye, Yuqing Zhang, Hao Peng, Huan Yang, Lei Lu e Shengdong Zhang. "9.2: Mechanism of H2O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs". SID Symposium Digest of Technical Papers 54, S1 (abril de 2023): 94–97. http://dx.doi.org/10.1002/sdtp.16230.
Texto completo da fonteRuderman, M. S., E. Verwichte, R. Erdélyi e M. Goossens. "Dissipative instability of the MHD tangential discontinuity in magnetized plasmas with anisotropic viscosity and thermal conductivity". Journal of Plasma Physics 56, n.º 2 (outubro de 1996): 285–306. http://dx.doi.org/10.1017/s0022377800019279.
Texto completo da fonteHuang, Sen, Shu Yang, John Roberts e Kevin J. Chen. "Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement". physica status solidi (c) 9, n.º 3-4 (29 de fevereiro de 2012): 923–26. http://dx.doi.org/10.1002/pssc.201100302.
Texto completo da fonteCho, Sanghyun, Seohan Kim, Doyeong Kim, Moonsuk Yi, Junseok Byun e Pungkeun Song. "Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors". Coatings 9, n.º 1 (15 de janeiro de 2019): 44. http://dx.doi.org/10.3390/coatings9010044.
Texto completo da fonteFlorentin, Matthieu, Mihaela Alexandru, Aurore Constant, Bernd Schmidt e Philippe Godignon. "10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters". Materials Science Forum 806 (outubro de 2014): 121–25. http://dx.doi.org/10.4028/www.scientific.net/msf.806.121.
Texto completo da fonteBai, Zhi Qiang, Xiao Yan Tang, Chao Han, Yan Jing He, Qing Wen Song, Yi Fan Jia, Yi Men Zhang e Yu Ming Zhang. "The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET". Materials Science Forum 954 (maio de 2019): 144–50. http://dx.doi.org/10.4028/www.scientific.net/msf.954.144.
Texto completo da fonteSlobounov, Semyon, Cheng Cao, Niharika Jaiswal e Karl M. Newell. "Neural basis of postural instability identified by VTC and EEG". Experimental Brain Research 199, n.º 1 (5 de agosto de 2009): 1–16. http://dx.doi.org/10.1007/s00221-009-1956-5.
Texto completo da fonteFranck Severin Ando, Amalaman. "Milieu Institutionnel, Sexe Et Stabilité Émotionnelle/Névrosisme Chez Des Orphelins Et Enfants Vulnérables Du Fait Du VIH À Abidjan". European Scientific Journal, ESJ 18, n.º 14 (30 de abril de 2022): 116. http://dx.doi.org/10.19044/esj.2022.v18n14p116.
Texto completo da fonteNeema, Vaibhav, Kuldeep Raguwanshi, Ambika Prasad Shah e Santosh Kumar Vishvakarma. "Vth Extraction Based Run Time Transistor Width (TWOS) Module for On-Chip Negative Bias Temperature Instability (NBTI) Mitigation". Sensor Letters 17, n.º 5 (1 de maio de 2019): 385–92. http://dx.doi.org/10.1166/sl.2019.4103.
Texto completo da fonteWang, Dapeng, Mamoru Furuta, Shigekazu Tomai e Koki Yano. "Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors". Nanomaterials 10, n.º 9 (9 de setembro de 2020): 1782. http://dx.doi.org/10.3390/nano10091782.
Texto completo da fonteAli, Amjad, Ahmad Naveed, Tahir Rasheed, Tariq Aziz, Muhammad Imran, Ze-Kun Zhang, Muhammad Wajid Ullah et al. "Methods for Predicting Ethylene/Cyclic Olefin Copolymerization Rates Promoted by Single-Site Metallocene: Kinetics Is the Key". Polymers 14, n.º 3 (24 de janeiro de 2022): 459. http://dx.doi.org/10.3390/polym14030459.
Texto completo da fonteNandi, Abhijit, Manisha, Vandana Solanki, Vishvanath Tiwari, Basavaraj Sajjanar, Muthu Sankar, Mohini Saini, Sameer Shrivastava, S. K. Bhure e Srikant Ghosh. "Protective Efficacy of Multiple Epitope-Based Vaccine against Hyalomma anatolicum, Vector of Theileria annulata and Crimean–Congo Hemorrhagic Fever Virus". Vaccines 11, n.º 4 (21 de abril de 2023): 881. http://dx.doi.org/10.3390/vaccines11040881.
Texto completo da fonteAktershev, Yuriy, Sergey Vasichev e Vladimir Veremeenko. "Precision Four-Quadrant Current Source Vch-500-12r For Superconducting Solenoids". Siberian Journal of Physics 12, n.º 2 (1 de junho de 2017): 138–41. http://dx.doi.org/10.54362/1818-7919-2017-12-2-138-141.
Texto completo da fonteJung, Seyeon, Taehoon Sung, Sein Lee e J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julho de 2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.
Texto completo da fonteOrtel, Thomas L., Karen D. Moore, Mirella Ezban e William H. Kane. "Effect of Heterologous Factor V Heavy Chain Sequences on the Secretion of Recombinant Human Factor VIII". Thrombosis and Haemostasis 75, n.º 01 (1996): 036–44. http://dx.doi.org/10.1055/s-0038-1650218.
Texto completo da fonteBesnier, Niko. "Les politiques identitaires entre le local et le global : la mobilisation transgenre aux îles Tonga (Pacifique sud)". Ethnologie française Vol. 54, n.º 1 (26 de fevereiro de 2024): 117–33. http://dx.doi.org/10.3917/ethn.241.0117.
Texto completo da fonteLee, Geon Hee, Jang Kwon Lim, Sang Mo Koo e Mietek Bakowski. "Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD". Materials Science Forum 1091 (5 de junho de 2023): 55–59. http://dx.doi.org/10.4028/p-nnor4r.
Texto completo da fonteSingh, N. "Space-time evolution of electron-beam driven electron holes and their effects on the plasma". Nonlinear Processes in Geophysics 10, n.º 1/2 (30 de abril de 2003): 53–63. http://dx.doi.org/10.5194/npg-10-53-2003.
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