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1
Xie, Shiyu. "Design and characterisation of InGaAs high speed photodiodes, InGaAs/InAlAs avalanche photodiodes and novel AlAsSb based avalanche photodiodes". Thesis, University of Sheffield, 2012. http://etheses.whiterose.ac.uk/2267/.
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Avalanche photodiodes (APDs) can provide higher sensitivity, when the noise is dominated by electronic noise, than conventional p-i-n photodiodes due to its internal gain achieved via the impact ionisation process. High speed and high sensitivity photodetectors operating at the wavelength of 1.55 m for optical communication have been intensely research due to the ever increasing internet traffic, particularly in the long-haul communication systems. In this dissertation high speed InGaAs p-i-n photodiodes, InGaAs/InAlAs separate absorption and multiplication (SAM) APDs are designed and characterised. The waveguide InGaAs photodiode exhibits a maximum -3 dB bandwidth of 26.5 GHz and external quantum efficiency of 38.4% giving a bandwidth-efficiency product of 10.2 GHz, which is higher than 7.14 GHz obtained from conventional vertically illuminated diodes fabricated from the same wafer. Building on the high speed InGaAs waveguide diodes, the InGaAs/InAlAs APDs were fabricated. We demonstrated low dark currents of ~50 nA at 0.9Vbd (Vbd is the breakdown voltage), low excess noise factor k 0.2 (k is the effective ratio of ionisation coefficients ratio in excess noise model) and wide bandwidth up to 40 GHz at low gains. Our APDs also achieve higher signal amplification than the best 40 Gb/s APD reported, confirming the suitability of our APDs for use in the 40 Gb/s optical communication systems. The signal enhancement of up to 24 dB was achieved at 35 GHz. While the InGaAs/InAlAs APDs may be suitable for 40 Gb/s operation, the avalanche gain is limited due to their limited gain bandwidth products. Hence novel wide bandgap AlAsSb avalanche regions were characterised for next generation high speed SAM APDs. The temperature dependence of dark current and avalanche gain were investigated using AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Extremely low temperature coefficients of breakdown voltage of 0.95 and 1.47 mV/K were obtained in these AlAsSb diodes, which are significantly lower than all semiconductor materials, with similar avalanche region widths, in the literature. Band to band tunelling current was shown to be significantly lower than those in InP and InAlAs diodes with the same avalanche region widths. By utilising an extremely thin 40 nm AlAsSb as multiplication layer, low excess noise factor corresponding to effective k values of 0.1 to 0.15 in InGaAs/AlAsSb SAM APDs was demonstrated. This is lower than that from an InAlAs pin diode with a 100 nm avalanche region. Therefore the potential of using thin AlAsSb avalanche region for next generation high speed and high sensitivity photodetectors has been demonstrated.
2
Xie, Jingjing. "Characterisation of low noise InGaAs/AlAsSb avalanche photodiodes". Thesis, University of Sheffield, 2013. http://etheses.whiterose.ac.uk/4511/.
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This work aims at studying the excess noise characteristics of AlAsSb material and investigating the high speed properties of InGaAs/AlAsSb SAM APDs in optical communication. Current commercial InGaAs/InP APDs have been limited to low frequency operation, below 10 Gb/s, because scaling down of multiplication region thickness has reached its limit due to high tunnelling current. The new material AlAsSb has been shown to offer more promising performance in terms of negligible tunnelling current, excellent thermal stability and extremely low excess noise. The fabrication of AlAsSb and subsequent passivation methods are presented. Since AlAsSb oxidizes easily when exposed to air, different etchants were tested. A selective etching method has been shown to provide the best result for homojunction AlAsSb and InGaAs/AlAsSb APDs. SU-8 and BCB passivated InGaAs/AlAsSb APDs have negligible degradation compared to unpassivated devices. However removal of BCB residue still needs to be optimised if it is to be used in high speed APD fabrication. Therefore in this work SU-8 has been identified as the dielectric material for passivation because of its simple process. Procedures for fabrication of high speed InGaAs/AlAsSb APD have been developed. The excess noise and avalanche gain of two thin homojunction AlAsSb p-i-n structures were characterised under pure injection (using 442 nm laser) and mix light injection (using 542 and 633 nm lasers). The absorption coefficient of AlAsSb was estimated from the linear interpolation of absorption coefficients of AlAs and AlSb. Both the gain and excess noise in the two structures indicated that the electron ionisation coefficient in AlAsSb is slightly higher than hole ionisation coefficient. Very low excess noise with an effective ionisation coefficient ratio keff corresponding to 0.05 was observed in a 230 nm thick AlAsSb p-i-n structure. An InGaAs/AlAsSb APD with a multiplication layer thickness of only 50 nm was studied to determine its temperature coefficient of breakdown Cbd, and compared to an InGaAs/InAlAs APD. Due to the relatively low doping in the charge sheet layers, the tunnelling current from the InGaAs absorption layer has been unavoidable. However using the linear extrapolation of 1/M to zero, very small Cbd of 8 mV/K was measured. This is lower than all the reported InGaAs/InAlAs and InGaAs/InP APDs. The bandwidth of an InGaAs/AlAsSb APD was studied on different devices with diameters from 25 to 250 µm. Gain close to 100 was measured on the smallest device with 25 µm diameter. However it was found to be partly contributed by edge breakdown. The bandwidth measured was ~ 3.4 GHz, independent of gain, suggesting that it is not limited by the avalanche process. As the avalanche limited bandwidth decreasing was not observed, a potential high gain bandwidth product > 327 GHz is plausible. The bandwidths of all the devices are mainly limited to the RC effect as the contact resistance still needs to be improved. The similar amplification of ~ 25 dB, obtained at 10 GHz and at 1 GHz confirms the InGaAs/AlAsSb is useful for high speed application.
3
Faure, Benoit. "MODELISATION ET OPTIMISATION DES PHOTODIODES A AVALANCHE ET HETEROJONCTION InP/InGaAs". Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0003.
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Principaux phenomenes physiques dans la photodiode a avalance inp/ingaas. Conception du recepteur par l'etude du systeme de transmission par fibre optique. Modelisation et optimisation des photodiodes
4
Tabor, Steven Alan. "Spectral and Spatial Quantum Efficiency of AlGaAs/GaAs and InGaAs/InP PIN Photodiodes". PDXScholar, 1991. https://pdxscholar.library.pdx.edu/open_access_etds/4760.
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This thesis reports a novel system capable of testing both the spectral responsivity and the spatial quantum efficiency uniformity of heterostructure photodiodes using optical fiber coupled radiation. Testing was performed to confirm device specifications. This study undertakes to quantify the spectral bandwidth of an AlGaAs I GaAs double heterostructure photodiode and two InGaAs I InP double heterostructure PIN photodiodes at D.C., through the use of spatial scanning. The spatial scanning was done using lasers at 670 nm, 780 nm, 848 nm, 1300 nm, and 1550 nm, coupled through singlemode optical fiber. The AlGaAs I GaAs material system covers the 600 - 870 nm wavelength region of research interest in the visible spectrum. The InGaAs I InP material system covers the 800 - 1650 nm region which contains the fiberoptic communications spectrum. The spatial measurement system incorporates a nearly diffraction limited spot of light that is scanned across the surf ace of nominally circular photodiodes using a piezoelectric driven stage. The devices tested range in size from 17 to 52 μin diameter. The smallest device scanned has a diameter approximately four times the diffraction limit of the radiation used for spatial scanning. This is the smallest diode yet reported as being spatially mapped. This is the first simultaneously reported spectral and spatial scans of the same heterostructure PIN photodiodes in the InGaAs I InP and AlGaAs I GaAs systems. The testing arrangement allows both spectral and spatial scans to be taken on the same stage. The diodes tested were taken from intermediate runs during their process development. All testing was performed at room temperature. This study describes the mechanical assembly, calibration and testing of a spatial quantum efficiency uniformity measurement system. The spectral quantum efficiency was measured with low power, incoherent broadband radiation coupled through multimode fiber from a tunable wavelength source to the device under test. The magnitude was corrected to the measured peak external quantum efficiency (Q.E.), determined during spatial scanning at a mid-spectral bandwidth wavelength using continuous wave (CW) higher power lasers. A procedure to improve the accuracy of the correction is recommended. This process has been automated through the use of National Instruments LabVIEW II software. The results from this procedure are plotted to show 2.5 D (pseudo 3D) and 2 D contour spatial quantum efficiency maps. These results give a quantified map of the relative homogeneity of the response. The non-homogeneity of the spatial scans on the smallest devices has not previously been reported. The Q.E. measurements made agree well with previously published results for similar device structures. The AlGaAs I GaAs device achieved a peak external Q.E. of 58.7% at 849 nm with -lOV bias. An InGaAs I InP device achieved 63.5% at 1300 nm with the same bias. The Q.E. results obtained are compared to theoretical calculations. The calculations were performed using the best optical constant data available in the literature at this time. The measured peak Q.E. was found to agree with the theoretical calculations to within 16% at longer wavelengths for both devices tested.
5
Dentan, Martin. "Photodiode PIN InGaAs en grands signaux hyperfréquence : modélisation, réalisation et caractérisation". Paris 11, 1989. http://www.theses.fr/1989PA112257.
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Les composants d'extrémité des systèmes de communication par fibres optiques sont le module émetteur laser, et le module récepteur comportant une photodiode P. I. N. Cette Thèse porte sur la réalisation d'une photodiode P. I. N. Et l'optimisation de ses performances en termes de bande passante et de linéarité, en fonctionnement en grands signaux dans le domaine microonde. Un effort est actuellement réalisé pour accroître la réponse en fréquence des composants d'extrémité. L'emploi d'un modèle "petits signaux" a permis de réaliser des photodiodes de bande passante toujours accrue, ayant par conséquence une région active de dimensions sans cesse plus réduites. Un autre objectif également important est l'obtention pour ces systèmes d'une dynamique élevée. Or l'absorption d'un signal optique intense dans une photodiode ayant une région active de très faibles dimensions engendre, par des effets de charge d'espace, la non-linéarité de la réponse électrique du dispositif. Un modèle prenant en compte les équations régissant l'écoulement des porteurs en Z. C. E. A été étudié. Il donne en particulier le taux de génération d'harmoniques dans le signal issu de la photodiode, en fonction de la puissance du signal optique incident. Dans cette thèse sont détaillées toutes les opérations effectuées pour réaliser une tête de réception optique microonde: épitaxie de la structure semiconductrice, réalisation de la puce par des procédés de microphotolithographie puis montage de la tête de réception. La caractérisation électrique en continu puis en hyperfréquence du dispositif a permis alors de vérifier la validité des modèles. La photodiode réalisée présente une bande passante de 18 GHz. On montre qu'elle a une meilleure linéarité que celle des lasers actuellement utilisés dans une liaison optique expérimentée au L. C. R. , pour une modulation directe du signal électrique appliqué au laser de 0 dBmThe devices coupled to optical fibers in optical links are the laser diode (light emitter) and the P. I. N. Photodiode (light receptor). This thesis concerns the optimization of the photodiode performances, in terms of bandwidth and linearity, in large signal microwave operation. One of the goals is the improvement of the frequency response of this device. Using a small signal modal, we show that we can increase the bandwidth of photodiodes by reducing the active region dimensions. Another important objective is to obtain large signal operation. The absorption of an intense optical signal, by a diode with a very small active region, leads to a non-linear electrical response due to the effects of space-charge. A modal taking into account the equations for the carrier transport in the space-charge region is developed; in particular, it gives the harmonies of the device response. Ln this thesis, we have realized and discuss all the steps necessary for the fabrication of the optical receiver: epitaxy of the material, process of the device and packaging allowing microwave operations. Then the two models described above were experimentally verified by D. C. And microwave electrical characterization. We demonstrate an 18 GHz bandwidth for our photodiode and show in particular that this photodiode has a more linear response than the lasers with direct modulation used in experimental optical links at L. C. R. , for an input electrical power of 0 dBm
6
An, Serguei. "Material and device characterization of InP/InGaAs avalanche photodiodes for multigigabit optical fiber communications". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0008/NQ61622.pdf.
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7
Le, Goff Florian. "Intégration de matériaux semi-conducteurs III-V dans des filières de fabrication silicium avancées pour imagerie proche infrarouge". Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAD034/document.
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Les imageurs à base d’alliage InGaAs sur substrat InP se sont fortement popularisés pour l’imagerie dans le proche infrarouge. La méthode de fabrication de référence est constituée d’une matrice de photodiodes planaires réticulées par diffusion localisée de zinc. Cette approche reste chère du fait d’une méthode d’hybridation individuelle entre circuit de lecture CMOS et circuit de détection. Afin de réaliser des imageurs proche infrarouge bas coût ou de grand format, cette méthode d’hybridation doit donc être revisitée. La solution présentée durant cette thèse est de transférer les structures III-V absorbantes directement sur le circuit de lecture par un collage moléculaire direct suivi d’une fabrication collective des matrices de photodiodes. Cette méthode demande le développement d’une nouvelle architecture pour la connexion électrique au circuit de lecture et la formation de diodes. Elle consiste en la réalisation de via de connexion à partir desquels un dopage localisé est réalisé. On forme alors des diodes circulaires autour de chaque via appelées LoopHoles. Ce dopage dont la température ne doit pas dépasser 400°C est réalisé par diffusion MOVPD. Malgré des phénomènes physiques parasites il a été possible de réaliser dans l’InP et l’InGaAs des jonctions p-n adaptées. Les caractéristiques optoélectroniques de groupes de diodes LoopHoles sur substrat InP et sur matériaux reportés ont ainsi pu être mesuréesNowadays short wavelength infrared (SWIR) imaging based on InP/InGaAs photo-diodes is quite popular for uncooled camera. The state of the art technology is a double layer planar heterointerface focal plane array. But, it remains expensive. Its cost comes essentially from the individually hybridization of photo-diodes array with read-out circuit, by the mean of an indium-bumps flip-chip process. We suggest an alternative method for hybridization, in order to lowering the cost and providing a sustainable process to decrease the pixel pitch. It consists in a direct integration by bonding silica of InP/InGaAs/InP structure above a finished read-out circuit (with CMOS technology) and circular diode architecture named “LoopHoles”. This diode consists in via-hole through the III-V materials and bonding silica layer down to top metal layer in the readout circuit for each active pixel. Via-hole is also used to diffuse laterally zinc in III-V layer in order to create p-type doping area. Because of the read-out circuit, temperature of diffusion has to be below 400°C which induces parasitic phenomena’s. We have found that a Hf02 coating on InP surface prevent this degradation while allowing zinc diffusion. We were able to control depth of p-n junction inside InP and InGaAs. We also investigated few steps of the processes like the molecular bonding, via etching and metallization. Finally, we succeeded to produce LoopHole photodiodes on bulk InP and on bonded materials with a high spectral efficiency, low pitch and a lower dark currant of 150 fA at room temperature
8
Hecht, Anna E. "Thermal Drift Compensation in Non-Uniformity Correction for an InGaAs PIN Photodetector 3D Flash LiDAR Camera". University of Dayton / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1607959309040459.
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Ozer, Selcuk. "Insb And Inassb Infrared Photodiodes On Alternative Substrates And Inp/ingaas Quantum Well Infrared Photodetectors: Pixel And Focal Plane Array Performance". Phd thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606097/index.pdf.
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InAsxSb1-x (Indium Arsenide Antimonide) is an important low bandgap
semiconductor whose high quality growth on GaAs or Si substrates is
indispensible for low cost, large format infrared focal plane arrays (FPAs).
Quantum well infrared photodetector (QWIP) technology, relying on mature
semiconductors, is also promising for the above purpose. While AlGaAs/GaAs
has been the standard material system for QWIPs, the search for alternative
materials is needed for better performance. This thesis reports a detailed
investigation of molecular beam epitaxy grown mid-wavelength infrared
InAsxSb1-x photodiodes on alternative substrates, and long wavelength infrared
InP/InGaAs QWIPs.
In the first part of the study, InSb and InAs0.8Sb0.2 photodiodes grown on Si and
GaAs substrates are investigated to reveal the performance degrading
mechanisms due to large lattice mismatch. InAs0.8Sb0.2/GaAs photodiodes yield
peak detectivities of 1.4×1010 and 7.5×
108 cmHz½
/W at 77 K and 240 K, respectively, showing that the alloy is promising for both cooled and near room temperature detectors. Under moderate reverse bias, 80 K RoA product limiting mechanism is trap assisted tunneling, which introduces considerable 1/f noise. InSb/Si photodiodes display peak 77 K detectivity as high as ~1×
1010 cmHz 1/2/W and reasonably high peak quantum efficiency in spite of large lattice mismatch. RoA product of detectors at 80 K is limited by Ohmic leakage with small activation energy (25 meV). Bias and temperature dependence of 1/f noise is in reasonable agreement with Kleinpenning&rsquo
s mobility fluctuation model, confirming the validity of this approach. The second part of the study concentrates on InP/In0.53Ga0.47As QWIPs, and 640×
512 FPA, which to our knowledge, is the largest format InP/InGaAs QWIP FPA reported. InP/InGaAs QWIPs yield quantum efficiency-gain product as high as 0.46 under moderate bias. At 70 K, detector performance is background limited with f/2 aperture up to ~3 V bias where peak responsivity (2.9 A/W) is thirty times higher than that of the Al0.275Ga0.725As/GaAs QWIP with similar spectral response. Impact ionization in InP/InGaAs QWIPs does not start until the average electric-field reaches 25 kV/cm, maintaining high detectivity under moderate bias. The 640×
512 InP/InGaAs QWIP FPA yields noise equivalent temperature difference of ~40 mK at an FPA temperature as high as 77 K and reasonably low NETD even with short integration times (t). 70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under &ndash
0.5 V (t=11 ms) and &ndash
2 V (t=650 Rs) bias, respectively. The results clearly show the potential of InP/InGaAs QWIPs for thermal imaging applications requiring short integration times. Keywords: Cooled infrared detectors, InAsSb, QWIP, focal plane array.
10
Pogany, Dionyz. "Etude du bruit télégraphique, du courant d’obscurité et des niveaux profonds dans les photodiodes InP/InGaAs/InP en désaccord de maille". Lyon, INSA, 1994. http://www.theses.fr/1994ISAL0044.
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Le courant d'obscurité élevé et le bruit basse fréquences sont les deux principaux facteurs limitant les performances des matrices linéaires des photodétecteurs InGaAs/InP en désaccord de maille destinés aux applications spatiales dans le domaine spectral l. 7μm. Le bruit en excès dans ces composants est essentiellement de type "bruit télégraphique" (BT) qui se traduit par des fluctuations discrètes du courant. Ce travail est consacré essentiellement à l'étude des mécanismes physiques qui contrôlent le bruit et le courant d'obscurité. Nous avons effectué une caractérisation, une classification et une modélisation du courant en excès. Le BT a été analysé dans les domaines temporel et fréquenciel. Les résultats montrent que le BT est induit par une fluctuation du courant en excès qui traverse une zone limitée constituée d'un défaut étendu lié aux dislocations traversant la jonction p-n, où règne un champ électrique élevé. Ce courant est modulé soit par une fluctuation de charge, soit par une reconfiguration structurale des défauts complexes dans la zone limitée. Pour interpréter ces résultats, nous avons été conduit à développer un nouveau modèle de BT qui combine les propriétés de plusieurs modèles proposés auparavant. Les mesures de bruit ont été corrélées à des méthodes en résolution spatiale comme la technique LBIC. Nous discutons en détail l'influence des défauts du matériau et de la technologie et analysons l'origine surfacique ou volumique du BT. Nous aboutissons à la formulation de propositions pour l'industrieDark current and low frequency noise are the principal performance limitations of lattice-mismatched InGaAs/InP linear photodetector arrays for space applications in the 1,7 micrometer wavelength range. Excess noise in these devices has essentially a form of the Random Telegraph Signal (RTS). This work mainly concern the study of physical mechanisme controlling the current and noise. We have performed characterisation, classification and modelling of excess crrents. RTS noise has been studied in time and frequency domain. Results show that RTS noise is due to fluctuations of excess current which flows through a dislocation related extended defetc. This current is modulated by a charge fluctuation or structural reconfiguration of complex defects located at the leakage site. To interpret the results we have developped previously proposed RTS noise models for bipolar devices, Measurments of excess noise have been correlated with spatially resolved technique like LBIC. We discuss the influence of material and technological defects as well as surface and bulk origin of RTS noise
11
Trochut, Sylvie. "Etude de l'élaboration d'hétéroscultures InP/InGaAs/InP par la méthode d'épitaxie en phase vapeur-hydrures : application à la réalisation de photodiodes". Paris 6, 1986. http://www.theses.fr/1986PA066148.
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Etude de l'élaboration de doubles hétérostructures dans un réacteur original comportant quatre chambres de réaction indépendantes, afin de permettre la croissance, sans interruption, ni phase transitoire, de la totalité de l'hétérostructure. Dans ce système, la mise en température du support, la croissance de InP et celle de GaInAs sont effectuées dans des chambres séparées. Les composants obtenus après diffusion de Zn ont de bonnes caractéristiques électriques et optiques, démontrant ainsi la faisabilité de la méthode, mais le rendement de fabrication est trop faible pour un procédé à vocation industrielle.
12
Trochut, Sylvie. "Etude de l'élaboration d'hétérostructures InP/InGaAs/InP par la méthode d'épitaxie en phase vapeur-hydrures application à la réalisation de photodiodes /". Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb37601595h.
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13
Hiskett, Philip Anthony. "Investigation into the photon counting performance of InGaAs/InP separate absorption, grading and multiplication avalanche photodiodes at a wavelength of 1.55#mu#m". Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/557.
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14
Colcombet, Paul. "Étude de photorécepteurs sous irradiation de protons, électrons et rayons gamma pour la mission LISA". Electronic Thesis or Diss., Université Côte d'Azur, 2024. http://www.theses.fr/2024COAZ5022.
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Programmée pour 2035, la mission LISA (Laser Interferometer Space Antenna), pilotée par l'Agence spatiale européenne (ESA), marquera une première en devenant le premier détecteur spatial d'ondes gravitationnelles. Opérant dans la gamme des basses fréquences de 0,1 mHz à 1 Hz inaccessible aux détecteurs terrestres, LISA ouvrira une nouvelle fenêtre sur notre univers et une nouvelle ère dans l'étude de la cosmologie. Le design de LISA présente trois vaisseaux formant un triangle équilatéral de 2,5 millions de km de côté, suivant la Terre dans son orbite autour du Soleil. Au cœur du fonctionnement de LISA se trouvent des interféromètres laser de haute précision, détectant des fluctuations de distance de l'ordre d'une dizaine de picomètres entre deux tests masses en chute libre positionnées dans chaque vaisseau. Le cœur de la mesure réside dans ses photorécepteurs à quadrants (QPR), essentiels pour l'enregistrement des signaux interférométriques. Ces QPR se composent d'une photodiode à quadrant (QPD) In0.53Ga0.47As de large surface et à faible capacité couplée à un trans-amplificateurs (TIA) à faible bruit, le tout assemblé dans un boîtier mécanique. Au cours de sa durée de vie de 12,5 ans, LISA sera confrontée à divers types de rayonnements, principalement en provenance du soleil. Un tel rayonnement peut dégrader les QPDs en induisant des défauts cristallins, modifiant les propriétés électroniques du semi-conducteur et donc altérant les performances des QPDs.L'objectif de cette thèse était d'étudier l'impact de l'environnement radiatif spatial sur les principaux paramètres électro-optiques des QPD InGaAs ainsi que leurs répercussions sur les performances des QPR et, par extension, sur les mesures interférométriques de LISA. Les appareils ont été fournis par les membres du groupe de travail sur les QPR du consortium LISA, à savoir les Pays-Bas et le Japon pour les QPD, et l'Allemagne pour les TIA.Dans ce contexte, j'ai développé et calibré cinq montages expérimentaux, permettant d'évaluer les principaux paramètres électro-optiques des QPD comme le courant d'obscurité, la capacité et l'efficacité quantique ainsi que les paramètres globaux du QPR comme le bruit de courant équivalent d'entrée et les réponses en phase et en amplitude face à des signaux interférométriques équivalents à ceux utilisées dans LISA. J'ai également développé des routines Phyton, permettant une procédure d'analyse automatique des données expérimentales. Ces développements expérimentaux et programmes ont permis d'évaluer les paramètres des QPD et QPR, avant et après trois campagnes d'irradiation, utilisant respectivement des protons (20 et 60 MeV, 1x10+9 jusqu'à 1x10+12 p/cm²), gamma (1 à 237 krad) et des électrons (0,5 et 1 MeV). Les conditions d'irradiation maximales dépassaient environ 5 fois les exigences pour LISA. J'ai directement participé aux campagnes d'irradiation, en collaboration étroite avec les équipes techniques du Centre de Protonthérapie Antoine Lacassagne de Nice pour l'irradiation des protons et de l'ONERA de Toulouse pour les irradiations des rayons gamma et des électrons). Les résultats ont démontré la robustesse de ces nouveaux dispositifs face aux radiations, sans aucune défaillance critique observée et avec presque toutes les QPDs répondant aux exigences de LISA. J'ai comparé le facteur de dommage aux résultats existants dans la littérature et exploré comment les caractéristiques intrinsèques des QPDs, telles que le niveau de dopage et la tension de polarisation, influencent leur vulnérabilité faces aux radiations. Un lien fut établi entre la dégradation globale du système, manifestée par une augmentation des niveaux de bruit du QPR et une réduction de la réponse en amplitude, avec la détérioration des paramètres des QPD. Cette corrélation permet d'estimer l'impact des QPD irradiées sur le fonctionnement du QPR et, par extension, sur la mesure de LISAScheduled for 2035, the Laser Interferometer Space Antenna (LISA), led by the European Space Agency (ESA), represents a pioneering effort as the first space-based gravitational wave detector. Operating in the low-frequency range of 0.1 mHz to 1 Hz beyond the capabilities of terrestrial detectors, LISA will open a new window to our universe and a new era in cosmological studies. The mission's design features three spacecraft, arranged in an equilateral triangle with each side spanning 2.5 million km, trailing the Earth in its orbit around the Sun. Central to LISA's function are its high-precision laser interferometers, which detect distance fluctuations between test masses in free fall within each spacecraft, with sensitivity to changes as subtle as a dozen picometers. The heart of LISA's detection technology lies in its Quadrants Photoreceivers (QPRs), critical for recording interferometric signals. These QPRs incorporate large area and low capacitance In0.53Ga0.47As Quadrant Photodiodes (QPDs) connected to low noise trans-impedance amplifiers (TIA), everything within a mechanical enclosure. Over its projected 12.5-year lifespan, LISA will encounter diverse radiation types, predominantly from solar emissions. Such radiation can degrade the QPDs by inducing crystal defects that alter the semiconductor properties, impairing the devices' performance.The objective of this thesis was to study the impact of the space radiation environment on the InGaAs QPDs' main electro-optical parameters. This investigation was further extended to assess the consequential implications of such degradations on the QPR performances and by extension to the LISA interferometric measurements. The devices have been provided by the members of the LISA Consortium Quadrant Photoreceivers Working Group, namely the QPDs from NL and Japan, and TIA FEE from Germany.In this context, I have developed and calibrated five experimental set-ups, allowing to evaluate the main QPDs' parameters like dark current, capacitance, and quantum efficiency and the overall QPR parameters like input equivalent current noise and phase and amplitude responses to interferometric LISA-like signals. I have also developed Phyton routines, allowing an automatic analysis procedure of the experimental data. I have used these experimental and software developments to evaluate the QPD and the QPR parameters, before and after three irradiation types, using respectively protons (20 and 60 MeV, 1x10+9 up to 1x10+12 p/cm^2), gamma (1 to 237 krad) and electrons (0.5 and 1 MeV). The maximum irradiation values exceeded ~5 times LISA requirements. I have directly participated to the irradiation campaigns, collaborating closely with technical teams from Antoine Lacassagne Proton-Therapy Center in Nice for protons irradiation and ONERA in Toulouse for gamma rays and electrons irradiations).The findings demonstrated the new devices' robust radiation tolerance, with no critical failures observed and almost all QPDs meeting LISA's requirements even post-irradiation. I compared our measured damage factor to those of the literature and explored how the intrinsic characteristics of QPDs, such as doping level and bias voltage, influence their vulnerability to radiation damage. Finally, I established a clear connection between the overall system's degradation manifested through increased noise levels and reduced amplitude response, and the modification of the QPDs' parameters. This correlation shows the ability to predict the impact of radiation-damaged QPDs on the functionality of the QPRs and, by extension, on the accuracy of LISA's gravitational wave measurements
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Zhou, Xinxin. "An InGaAlAs-InGaAs two-colour detector, InAs photodiode and Si SPAD for radiation thermometry". Thesis, University of Sheffield, 2014. http://etheses.whiterose.ac.uk/7462/.
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This work aims to develop infrared detectors and to introduce a new measurement technique for infrared radiation thermometry. It consists of two-colour detectors for ratio thermometry, InAs photodiode for 3.43 m narrow band thermometer and photon counting thermometer using a Si single photon avalanche photodiode (SPAD). In addition to research in these detectors, a Monte Carlo model for modelling impact ionisation in Si was also developed. InGaAlAs is attractive material for multi-colour detection at wavelengths up to 1.7 m, as it is lattice matched to InP substrate. InGaAlAs-InGaAs two-colour detector was evaluated as a ratio thermometer. When compared to a commercial Si-InGaAs detector, the InGaAlAs diode produces slightly higher (lower) output than Si at temperature below (above) 500 °C, while the InGaAs diode in this work also produces slightly higher output than that in the commercial Si-InGaAs detector. The InGaAlAs and InGaAs diodes detect blackbody temperatures as low as 275 and 125 oC, respectively, with signal to noise ratios (SNRs) above 10. As a ratio thermometer, the two-colour InGaAlAs-InGaAs photodetector achieves a temperature error of 12.8 °C at 275 °C, but this improves with temperature to 0.1 °C at 450 °C. If the maximum temperature error of 2 °C is defined, the InGaAlAs-InGaAs is capable of detecting an object temperature down to 325 °C. These results demonstrate the potential of InGaAlAs-InGaAs two-colour photodetector for development of high performance two-colour array detectors for radiation thermometry and thermal imaging of hot objects. The InAs photodiode offers huge potential for infrared sensing applications at wavelengths above 1.7 m. The performance of InAs photodiode was evaluated for use in radiation thermometry at wavelengths beyond InGaAs photodiode. For uncooled InAs, it successfully measured a blackbody temperature of 50 oC with an acceptable error of 0.17 oC. In order to evaluate its performance as a 3.43 m narrow band thermometer, measurements were repeated with a narrow band filter. InAs was demonstrated to have lower temperature error than a commercial PbSe detector. The temperature error was 1.88 oC for InAs at 50 oC compared to 3.78 oC for PbSe. This suggests that InAs is ideally X. ZHOU III suited for applications requiring 3.43 m operating wavelength. Further improvement was achieved by cooling InAs to 200 K. It was found that a temperature as low as 37 oC, with an error of less than 0.5 oC, can be measured indicating its potential for human body temperature sensing. An alternative to using a photodetector with longer wavelength response is to increase the sensitivity of the photodetector via internal gain mechanisms such as impact ionisation. By employing a very high internal gain in SPAD, the photon counting technique was evaluated for radiation thermometry. Photon induced avalanche pulses were successfully measured at temperature as low as 225 oC with an error less than 2 oC using Si SPAD. This is significantly lower than the lower temperature limit of 400 oC in conventional Si photodiode based radiation thermometer. The photon counting technique is therefore demonstrated to be a feasible technique to achieve lower temperature sensing.
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Kang, Yimin. "High performance fused InGaAs/Si photodiode /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3091207.
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Mages, Phillip. "III-V to Si wafer fusion for the fused Si/InGaAs avalanche photodiode /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3090440.
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Blaser, Markus. "Monolithically integrated InGaAs/InP photodiode-junction field-effect transistor receivers for fiber-optic telecommunication /". [S.l.] : [s.n.], 1996. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=11998.
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Bitter, Martin. "InP/InGaAs pin-photodiode arrays for parallel optical interconnects and monolithic InP/InGaAs pin/HBT optical receivers for 10-Gb/s and 40-Gb/s /". [S.l.] : [s.n.], 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13948.
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20
Ruff, Edward Clark III. "Electro-Optic Range Signatures of Canonical Targets Using Direct Detection LIDAR". University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1522922373060272.
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O'Reilly, Patrick J. "Effects of 30 MEV electron irradation on InGaAsp LEDS and InGaAs photodiodes". Thesis, 1986. http://hdl.handle.net/10945/21811.
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Ho, Chong-Long, e 何充隆. "High-Speed InGaAs P-I-N Photodiodes for Fiberoptic Communications". Thesis, 2000. http://ndltd.ncl.edu.tw/handle/61434209517966122365.
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Ho, Wen-Jeng, e 何文章. "High-Performance InGaAs/InP Semiconductor Photodiodes for Optical Fiber Communication". Thesis, 1997. http://ndltd.ncl.edu.tw/handle/18931707779154450473.
Texto completo da fonteResumo:
博士國立清華大學
電機工程學系
85
High-performance InGaAs/InP photodiodes are vital components for long-wavele-ngth optical fiber communications and measurements. This dissertation exploresin depth the material characterization, device fabrication, measurement, calc-ulation, and analysis. For the Er-doped InGaAs PIN photodiodes grown by liquidphase epitaxial(LPE), the growth and characterization of Er-doped InGaAs laye-rs, and fabrication and performance of Er- doped PIN photodiodes have been inv-estigated. For the planar devices, we have proposed a distributed impedance model and diode impedance calculation, and RLC modeling on frequency response.We also present the preliminary efforts on reliability of the fabricated grow-n by metal-organic chemical vapor deposition(MOCVD) devices. In respect of thehigh speed PIN photodiode, we have demonstrated a simple, high yield planar - process for fabricating low-capacitance InGaAs PIN diodes on semi-insulating InP substrate withbandwidth exceeding 14 GHz. In addition, we have successfu-lly fabricated the uniform and high performance of monolithically integrated 1 x 12 array of planar InGaAs PIN photodiodes. These photodiode arrays have hi- ghly uniform characteristics and good performance in dark currents and photor-esponsivities. Lastly, the device of planar InGaAs/InP avalanche photodiodes have been fabricated and characterized. The gain-bandwidth products of 10 GHz were obtained.
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Huang, R. W., e 黃任汶. "The design and fabrication of planar-type InGaAs/InP avalanche photodiodes". Thesis, 2001. http://ndltd.ncl.edu.tw/handle/51228166812497776483.
Texto completo da fonteResumo:
碩士國立清華大學
電子工程研究所
89
Abstract An avalanche photodiode with internal gain made it have higher sensitivity in communication receiver. Therefore, It is suitable as photodetectors in long distance fiber communication or high sensitivity system. An avalanche photodiode with pn junction using planar diffusion process operated near the breakdown voltage. Because of the junction curvature effect, this will make the edge breakdown easily. This is a serious problem in photodetectors In order to reduce the edge breakdown effect and tailor the distribution of the electric field intensity, we added a charge layer and then etched by dry etching technology to form a mesa structure and re-grown a multiplication layer by MOCVD. We successfully fabricated five structures without guard ring structures. In conclusion, the dark current is about 4.28nA and the gain is around 10 at 0.95V breakdown voltage. The 3dB bandwidth is about 4.9GHz when the gain is 5.
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Liou, Jheng-Jie, e 劉政杰. "Fabrication and Characterization of Planar-Type InP/InGaAs SAGCM Avalanche Photodiodes". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/ssg54x.
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碩士國立臺北科技大學
光電工程系研究所
96
Avalanche photodiode due to have internal gain and higher sensitivity characteristics in communication receiver. Therefore, it is suitable as photodetectors in long distance fiber communication system. This paper was already successfully manufactured planar-type InP/InGaAs SAGCM-APD. We have also seized on the SAGCM-APD DC characteristics and AC dynamic characteristics to proceed measurement, including in temperature changes and light intensity changes for device effect. An avalanche photodiode using planar diffusion process operated near breakdown voltage. Because of the junction curvature effect, this will make the edge breakdown easily. However, in the past avalanche photodiodes of process in order to resolve the edge breakdown. There were used MOCVD in two growth or double diffusion in process to decrease edge breakdown. But those process were manufactured with higher complexity, and the relative costs are greatly increased. In this paper, we designed an epitaxy-structure and a simple process, and fabricated planar-type InP/InGaAs SAGCM-APD. This process etched by wet-chemical technique to form concave structure and then proceed one-diffusion step. This method make soft junction curvature to achieve suppression edge breakdown, and alsoly decrease process complexity to achieve cost down. In conclusion, We designed a simple, low-cost of new process to fabricate SAGCM-APD and successfully manufactured SAGCM-APD of 60µm diameter. The breakdown voltage of 57 ± 2V、dark current of 11pA at -5V and 15nA at 0.9Vbr was obtained. A capacitance of 3.67pF at 0V and 0.67pF at 0.9Vbr was measured. On AC dynamic characteristics, the maximum 3dB bandwidth is about 2.3GHz when gain is 10 and the gain-bandwidth product is 23 GHz.
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Lin, Zhe-Shi, e 林哲世. "The design and fabrication of planar-type InP/InGaAs SAGCM avalanche photodiodes". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/05840003870320550562.
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Chiang, Cho-Chun, e 蔣卓均. "Fabrication and Characterization of high speed planar-type InGaAs/InP avalanche photodiodes". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/38hnec.
Texto completo da fonteResumo:
碩士國立臺北科技大學
光電工程系
106
In recent years, high speed avalanche photodiode (APD) is an very important photo-detector for more applications. Typically, InP-based avalanche photodiode was consisted of a absorption layer, a grading layer, a charge layer and multiplication layer (SAGCM). The SAGCM APD exhibited high responsivity and high gain bandwidth product. On the other hand, the SAGCM APD with planar structure is a more reliable device. In this work, the operation speed of 2.5 Gb/s and 10 Gb/s planar type avalanche photodiodes are fabricated and characterized . Some importance issues are discussed in this work : (1) the epitaxial layer structure design of SAGCM APD and electric field profile calculation, (2) device processing mask design and two-step Zn-diffusion processes, (3) DC performance analysis of APD device, and(4) AC performance analysis of APD device based on f3-dB frequency response and eye diagram measurements. 2.5 Gb/s APD: the breakdown voltage (VBR) is 39~40 V and the paunch-through voltage is 22~23 V. At 0.9 VBR , the dark current is 0.5 nA and the multiplication gain (M) is 10.5. The f3-dB of fabricated APD is about 3.96 GHz under 1 µW illumiation and at M = 9. The gain bandwidth product is about 52.7 GHz. The obtained eye diagram show the eye opening is large and clear and the risetime is 107.2 ps, which can be meet the application of 2.5 Gb/s optical fiber communicate system. 10 Gb/s APD: the VBR is about 29~30 V and the paunch-through voltage is 12~13 V. At 0.9 VBR , the dark current is 3.4 nA and the gain is 5. The f3-dB of fabricated APD is about 8.67 GHz under 1 µW illumination and at gain of 5. The eye opening is large and clear, compare to the OC-192 eye mask . The risetime is 46.7 ps. Based on obtained eye diagram parameter, the fabricated APD is also suitable for application in 10 Gb/s optical fiber communicate system.
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ZHANG, HAO-XIANG, e 張皓翔. "Characterized Single-Photon Detection Performances of InGaAs/InP Avalanche Photodiodes System Under Geiger-Mode Operation". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/cp9j27.
Texto completo da fonteResumo:
碩士國立臺北科技大學
光電工程系
107
In recent years, quantum communication is one of the fast-growing scientific fields. It can be used in the defense, banking, and insurance industries to ensure the safe transmission of information without being stolen. There are three main technologies in quantum communication, namely single photon source technology, quantum coding and transmission technology, and single photon detection technology. The main research of this thesis is to study the design and characterization of single photon detection system. In this study, the system consisted of dual-balanced avalanche photodiode(APD), geiger-mode, gated-quenching, and self-differencing circuit, to detect single photon characteristics. We measure and analyze the characteristic parameters of the single photodiode detection system, including dark count probability (DCP), dark count rate (DCR), single photon detection efficiency (SPDE), noise equipment power (NEP), and after pulsing probability (APP). In experiment, two InGaAs/InP APD devices were used, which were named as APD1 and APD2, respectively. APD1 was mainly used to measure single photon characteristics. To reduce APD1 thermal noise, we controlled the APD1 temperature at -30oC by 3-stage TE cooler and fan module. When APD1 is operating in Geiger mode, we combine the reverse DC bias (VBr - 0.5 V) with the pulse signal so that APD1 switches between the Geiger mode and the return linear mode in a short time. In the Geiger mode, APD1 can detect single photon signals, while in the linear mode, it can suppress avalanche current. However, when the gated pulse signal was added on APD1, the spike noise was generated. At this moment, we could adjust the bias which added at APD2 to generate another matched spike noise signal. The output signals of APD1 and APD2 were sent to differential circuit to eliminate the two spike noises. After the phase elimination, the avalanche signal was then amplified by an amplifier. Finally, the avalanche signal waveform was observed by oscilloscope and the signal counts was counted by a photon counter (SR400) which was used to take the dark count value and the light count value. single photon detection efficiency, dark count probability, dark count rate, noise equipment power, and afterpulsing probability were obtained through formula calculation. In this study, we changed the temperature (from -30oC to 20oC) and pulse width (from 2 ns to 5 ns) to measure the characteristics of single photons and analyze their measurement results. Under the temperature of -30 ° C, gated frequency of 2 MHz, gated pulse width of 2 ns and excess bias voltage of 1.9 V, we obtained DCR of 1.4×106 Hz, DCP of 2.81×10-3, SPDE of 13.95 %, NEP of 1.54×10-15 (W/Hz)1/2 and APP of 4.95 %.
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Lee, Yueh-Lin, e 李岳霖. "Low Dark Current, High Responsivity, and Uniform Photosensitivity of InP/InGaAs PIN Short-Wavelength-Infrared Photodiodes". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/63344641532371744500.
Texto completo da fonteResumo:
博士國立清華大學
光電工程研究所
103
In this dissertation, we report on the design of large-area planar InP/InGaAs/InP heterostructure p-i-n photodiodes (PIN-PDs) with various antireflective layer structures and double-path reflectors for the enhancement in the position sensitivity, device response, and quantum efficiency. The antireflection (AR) coating structure is composed of high and low refractive index materials, including the insulating type of SiO2/Si3N4 bi-layer, conducting type of SiO2/GZO bi-layer, and conducting type of SiO2/GZO/NiOx tri-layer. The double-path reflector consists of AuGe-based alloys. The thermal-mode ALD (TM-ALD), plasma-mode ALD (PM-ALD), and radio-frequency (RF) sputtering methods were employed to deposit the n-type conductivity of GZO films. For ALD technology, a sandwich structure of GZO films was accomplished by layer-by-layer growth method. The performance of GZO films can be improved by modulating the growth temperature and introducing various oxygen sources. ALD-GZO films exhibit a resistivity of 3.8 x 10-3 Ω-cm, carrier concentration of 3.4 x 1020 cm-3, average optical transmittance of above 90% in the visible and infrared regions. For RF-sputtering, GZO films exhibit the resistivity of 2.9 x 10-3 Ω-cm and carrier concentration of 3.6 x 1020 cm-3. However, the optical transmittance is too low to be used for the infrared regions. On the other hand, the p-type conductivity of NiOx film can be fabricated by both e-beam evaporation and RTA process in oxygen ambient. Thus, the heavily GZO films (＞1020 cm-3) with low resistivity (~10-3 Ω-cm) were deposited onto the p-InP/InGaAs structure by both RF sputtering and PM-ALD, which always reveal a Schottky contact characteristics. The barrier height improvement at the n-GZO/p-InP interface is proposed by using the dual zinc driven-in steps and a NiOx insertion layer to realize the ohmic characteristics. The high zinc concentration (5-8 × 1018 cm-3) is first obtained in the surface of p-InP cap layer via the dual zinc driven-in steps. An array of transmission line method (TLM) structures were designed and constructed on top of the p-InP cap layer for the contact performance. The barrier height plays an important role for the formation of ohmic property between n-type GZO and p-type InP using NiOx insertion. By inserting a NiOx layer between GZO and Au/Cr contact films, the Au/Cr/GZO/NiOx contact pad for zinc driven-in p-InP cap layer exhibits a good ohmic contact behavior and a low specific contact resistance of 3.07 × 10-4 Ω-cm2 with the post-annealing process of 430℃ for 180 sec. Thus, the transparent conducting Ga-doped ZnO (GZO) layer was grown on top of the InGaAs PIN-PDs by PM-ALD to improve in the lateral resistance effect, and the NiOx layer was used to reduce the barrier height between n-GZO and p-InP. The SiO2/GZO/NiOx antireflection shows an average optical transmittance of above 90% and reflectance of below 10% in the infrared spectrum. The AuGe/Au backside reflector presents the optical reflectance of above 80%. Then, the combination of two features of antireflection coating and double-path reflector is employed to decrease incident-light loss and increase double-path absorption. By introducing both the transparent-conducting-based AR coating and double-path reflectors into the device structure, the large-area planar InGaAs PIN-PDs exhibit a low dark current density of 32.8 nA/cm2 at 5-V reverse bias, a high breakdown voltage of 35-V reverse bias, high build-in voltage of 1.65 eV, high responsivity of 0.93 A/W at 1310 nm and 1.09 A/W at 1550 nm, and a high quantum efficiency of near 90% in the 1000-1600 nm spectral range. The cutoff wavelength is obtained to be about 1650 nm. Under the high-power light illumination, the photosensitivity profile of position information of InGaAs-based PD with SiO2/GZO/NiOx AR coating tri-layer is uniform and instantaneous distribution.
30
LIN, JIAN-NAN, e 林建男. "Fabrication and characterization of mesa-type InAlAs/InGaAs SAGFM avalanche photodiodes using flip-chip bonding technique". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/6ef7th.
Texto completo da fonteResumo:
碩士國立臺北科技大學
光電工程系
107
In recent years, due to the development of intelligent networks, wireless, and cloud computing, it makes the demand for transmission capacity of fiber optic communications systems growing rapidly. InAlAs-InGaAs avalanche photodiode based on separate absorption, grading, field control and multiplication layers (SAGFM) and with mesa type device structure exhibited good performances in low dark current, high responsivity, and high gain bandwidth product. In this paper, flip chip bonding technique was used to integrate the high speed mesa type avalanche photodiode to perform dynamic characteristic measurement. In this paper, (1) Design and growth of device epitaxial structure, and calculation of electric field distribution, (2) Design of mask and device process, (3) Study of flip chip and reflow process, (4) DC measurement and analysis, and (5) AC measurement and analysis are presented. We have successfully developed mesa-type and backside illumiation SAGFM APD with active region diameter of 30 μm. The breakdown voltage is 27.7 V and paunch-through voltage is 16.5 V. At 0.9 VBR, the dark current is 33.3 nA, capacitance is 0.214 pF, and multiplication gain is 8.1. The f3-dB of 5.91 GHz and gain bandwidth product of 55 GHz were obtained using a 1550 nm and 1 µW modulated light source. The rise time is 70.1 ps which is determined by eye digram measurement.
31
Huang, Chi-Chen, e 黃麒甄. "Fabrication and Characterization of High-Sensitivity Large-Area Planar-Type InGaAs p-i-n Short-Wave Infrared Photodiodes". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/66840186216547798472.
Texto completo da fonteResumo:
博士國立清華大學
電子工程研究所
104
In this dissertation, we investigate the fabrication and characterization of large-area planar-type InGaAs p-i-n short-wave infrared (SWIR) photodiodes (PDs) by using the rapid thermal diffusion (RTD) technique with spin-on dopant (SOD) source to form a p-type region of p-i-n diode. The absorption layers of 1.7-μm cutoff-wavelength PDs and 2.2-μm wavelength-extended PDs are In0.53Ga0.47As and In0.73Ga0.27As, respectively. In order to enhance the responsivity of PDs, the Si/Al2O3 or gallium-doped zinc oxide (GZO) /SiO2 bi-layers are used as the antireflective (AR) coating. The large-area planar-type 1.7-μm cutoff-wavelength InP/InGaAs/InP p-i-n PDs by using the RTD technique with ZPDC source are demonstrated. The 1.7-μm cutoff-wavelength PD exhibits a low dark-current density of 8.6 nA/cm2 at -10 mV, a high responsivity of 1.1 A/W at the wavelength of 1.55 μm, a high quantum-efficiency of above 90% in the wavelength range of 1.0-1.55 μm, and a sharp cutoff-wavelength of 1.65 μm. The large-area planar-type 1.7-μm cutoff-wavelength InP/InGaAs/InP p-i-n PDs by using the RTD technique with MgSiOx source are demonstrated. The electric and optical characteristics of 1.7-μm PD with Mg driven-in are comparable to that those of 1.7-μm PD with Zn driven-in. The 1.7-μm PD exhibits a low dark-current density of 4.0 nA/cm2 at -10 mV, a high responsivity of 1.1 A/W at the wavelength of 1.55 μm, a high quantum-efficiency of above 90% in the wavelength range of 1.0-1.55 μm, and a sharp cutoff-wavelength of 1.65 μm. The large-area planar-type 1.7-μm cutoff-wavelength InP/InGaAs/InP p-i-n PD by using the GZO transparent conducting oxide (TCO) as a lateral current-spreading layer for reduction in the lateral resistance of p-InP contact layer and improvement in the uniformity of spatial response are demonstrated. The GZO films deposited by e-gun evaporation with 400-°C post-annealing show a low sheet-resistance of 28 Ω/□, which is much lower than the 1-μm p-InP contact layer of ~300 Ω/□. The 1.7-μm PD with GZO layer exhibits a low dark-current density of 4.8 nA/cm2 at -10 mV and 68 nA/cm2 at -5 V, a high responsivity of 1.0 A/W at the wavelength of 1.55 μm, a high quantum-efficiency of 80-85% in the wavelength range of 1.0-1.55 μm, and a sharp cutoff-wavelength of 1.65 μm. In addition, the 1.7-μm PD with GZO layer exhibits a more uniform spatial-response under high optical-power illumination. It is attributed to the use of GZO film as a lateral current-spreading layer. The large-area planar-type 2.2-μm wavelength-extended InAsP/InGaAs/InAsP p-i-n PDs by using the RTD technique with ZPDC source are demonstrated. The 2.2-μm PD exhibits a low dark-current density of 8.2 μA/cm2 at -10 mV, a high responsivity of 1.25 A/W at the wavelength of 2.0 μm, a high quantum-efficiency of 80-85% in the wavelength range of 1.5~2.0 μm, and a sharp cutoff-wavelength of 2.2 μm.
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"InSb AND InAsSb INFRARED PHOTODIODES ON ALTERNATIVE SUBSTRATES AND InP/InGaAs QUANTUM WELL INFRARED PHOTODETECTORS: PIXEL AND FOCAL PLANE ARRAY PERFORMANCE". Phd thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606097/index.pdf.
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嚴浩天. "InGaAs Avalanche Photodiode for Single-Photon-Detector Application". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/14219529918410498848.
Texto completo da fonteResumo:
碩士國立交通大學
電子工程系所
96
The goal of this work is to setup a single-photon-detector system for fiber-optics communication in the range of 1100-1600nm. First, we figured out the characteristic of InGaAs Avalanche photodiode (APD) operating in Geiger mode. The difference between single photon detector and traditional photodetector in light detection was compared. After that, the quenching circuit for subsequent detection of APD was built and analyzed in detail. With the knowledge, we setup the measurement system for characterizing the single photon detector and found the best parameters for detection performance, including the excess voltage, the operation temperature, the repetition rate and the gated width. In our experiment, the APD (NEC-NR8300) was analyzed its performance at the source wavelength of 1300nm. In gated mode, we studied the relationship between repetition rate and temperature to minimize the after pulsing effect. By calculating the difference of detection efficiencies in different gated widths at 100KHz repetition rate, the after pulsing probability under 5% was obtained in 20ns gated width at 170K and higher temperatures. Because of that, the detection efficiency results at these temperatures are correct. Finally, by increasing the excess bias and shorting the gated width, the best performance, detection efficiency 60%, dark count probability 1% and noise-equivalent-power (NEP) 7x10-16 WHz-1/2, was achieved at 190K. On the other hand, by using passive quenching for the detection of continuous-wave (CW) light source, we were successful to distinguish three different power levels, 10-12 W、10-13 W、10-14 W.
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Chuang, Jia-Hao, e 莊家豪. "Methods for improving the photoresponse of InGaAs PIN photodiode". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/98358654651790261846.
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碩士國立清華大學
電子工程研究所
100
We using the InGaAs PIN epi-wafer to realize the NIR photodiode, it has high responsivity and low dark current with large aperture size. We find that secondary diffusion after passivation would decrease the dark current, the dark current is lower dependence on radius than single diffusion, and the activation energy is more closed to ideality than single diffusion. We has two types for anti-reflection coating on photodiode, typically, the double layer ARC which combine with dielectrics, another one, depositing a TCO film on P+ InP surface, we hope that would improve lateral effect. For dielectrics type ARC, it has very low reflectivity at IR region (especially 1300~1600 less than 1%), the peak responsivity of photodiode with this ARC was 1.082 A/W at 1550nm and 0.98 A/W at 1312nm. The reflectivity of another one isn’t better than dielectrics (the reflectivity at IR about 3~7%), we need a conductive path to improve lateral effect at high power illumination. Although the peak value of responsivity with TCO film was 1.01 A/W at 1550nm and 0.94 A/W at 1312nm, the responsivity decreased seriously as power increase. Because of the interface exists a barrier height between GZO and P-type InP. This problem can overcome by reverse-bias, but the low absorption at long wavelength, we apply backside double path to improve it. The improvement is obvious, the increasing of quantum efficiency from 1400- 1750 nm, especially >1700 nm. The limitation by the reduction of InGaAs absorption coefficient is serious when wavelength > 1700 nm. It has advantage to extend the detecting band.
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Chen, Yen-Wei, e 陳彥瑋. "Investigation of InGaAsP Heterostructure Field-effect Transistors and Photodiodes". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/18751726378451419336.
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博士國立成功大學
微電子工程研究所碩博士班
92
In this dissertation, we have successfully fabricated and investigated InP-based InGaAsP heterostructure field-effect transistors (HFET's) and p-i-n photodiodes (PIN-PD's) grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The characteristics of InAlAs/InGaAsP HFET's and InGaAsP/InP PIN-PD's are measured and discussed. We describe the properties of the planetary MOCVD reactor. The growth parameters and characteristics of the epi-layers are discussed and analyzed. A series of specialized measurements, including double-crystal x-ray diffraction (DCXRD), photoluminescence (PL), Hall measurement, electrochemical capacitance-voltage (ECV) profile, Lehighton and Surface-scan are used to qualify material characteristics. Improved material uniformities and qualities are demonstrated. Thickness uniformity of the epi-layer within 5%, wavelength uniformity of the quaternary InxGa1-xAsyP1-y layer within 5 nm and lattice mismatch of epi-layer kept within 500 ppm are achieved. Furthermore, the In0.53Ga0.47As layer background concentration lower than 7x1014 cm-3 and the electron mobility higher than 12000 cm-2/v•s are achieved. InAlAs/InxGa1-xAsyP1-y high electron transistors (HEMT's) with various InxGa1-xAsyP1-y channels were demonstrated. Improved linearity characteristics are achieved in the structures utilizing compositionally graded InxGa1-xAs channel and composite InxGa1-xAsyP1-y triple channels due to the improved confinement and transport characteristics. By thinning the InAlAs barrier layer of PCHEMT, enhancement-mode operation is obtained. As the gate bias is sufficiently large, the device exhibits a pronounced N-shaped NDR behavior since hot electrons tunnel from the InGaAs channel layer to the gate electrode. On the other hand, an InAlAs/InGaAs doped channel field-effect transistor (DCFET) was fabricated to improve device linearity, current drivability and breakdown voltage. Experimentally, high transconductance, high current drivability, high linearity, low leakage current and high breakdown voltage are achieved due to the doped InGaAs channel, undoped InAlAs Schottky layer and good carrier confinement. Moreover, a delta-doped InAlAs/InGaAs HEMT with a graded InxGa1-xAs V-shaped channel (DDHEMT) is fabricated. The delta-doping carrier supply layer and graded V-shaped channel are used to enhance two-dimension electron gas (2DEG) density and mobility. Moreover, the improved carrier confinement in the channel is achieved. Experimentally, improved transport performance, including high transconductance, high current drivability, high linearity and high breakdown is achieved. Finally, a series of planar InGaAs(P)/InP PIN-PD's were fabricated and demonstrated. High-quality and uniformity of the epi-layers are obtained. The measured concentrations of In0.53Ga0.47As and In0.66Ga0.34As0.73P0.27 (1.4 PQ) absorption layers are as low as 4.5x1013 and 2.4x1014 cm-3, respectively. Experimentally, the dark current is significantly reduced in the structure utilizing a wider-band-gap material of quaternary InxGa1-xAsyP1-y as a cap layer to reduce the device surface leakage current and dark current. In addition, the wide-band-gap cap layer may also reduce the incident light absorption in the cap layer, thus improving device responsivity. The PIN-PD's with a wide-band-gap InP cap layer in the InxGa1-xAsyP1-y material system can be expected to further improve device performances.
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Chiu, Chien-Hung, e 邱建閎. "Characterization of InGaAs/InP Avalanche Photodiode for Single Photon Detection". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/948mcs.
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碩士國立臺北科技大學
光電工程系研究所
97
In this thesis, APDs capable of detecting very weak intensities of light have been investigated. In recent years, it has been paid attention to the investigating and applications for single photon, such as the quantum cryptography, three-dimensional imaging, single molecule detection, and optical time domain reflectometry. In order to work APD as well as a SPAD, we find the suitable detection conditions for single photon detection system by changing the values of parameters. In our experiment, the InGaAs/InP APDs was studied at the optical communication wavelength of 1550nm of light source. Due to the photon arrival time knowing and the avalanche current of APD must be quenching quickly, we designed a simple quenched circuit of gated mode. When APD operated above their breakdown voltage which so called Geiger mode, it can achieve single photon sensitivity for single photon detection. A single photon detection system was established for characterization of photodetectors at very low levels of illumination. In this thesis, the effect of various experimental parameters such as temperature, excess bias voltage, repetition rate, and pulse width were studied. From experimental observations, we explained the mechanism of dark count generation was invoked by band-to-band tunneling on Geiger mode. At the repetition rate of 10KHz and the operating temperature of -40℃, we achieved the optimum SPDE of 9% and NEP of 5.4×10-15 W/Hz1/2.
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Ting-HsuanLin e 林廷諠. "The Development of SAGCM InP/InGaAs Planar type Avalanche Photodiode". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/vupm7d.
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Tseng, Shih-Ting, e 曾士庭. "InGaAs/InP avalanche photodiode using gated-Geiger-mode for single photon detection". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3jcq46.
Texto completo da fonteResumo:
碩士國立臺北科技大學
光電工程系
106
In this thesis, the changing in temperature, excess bias and gated frequency to detect single photon using a dual avalanche photodiode (APD) scheme was proposed and demonstrated. The characteristics of single photon detection, including dark count probability (DCP), single photon detection efficiency (SPDE), noise equipment power (NEP) and afterpulsing probability, are measured and discussed. In this work, APD1 was cooled down by TE cooler and operated excessed breakdown voltage. APD2 was operated in room temperature and bias act a proper voltage to match APD1. Then, the signals of APD1 and APD2 were self-differencing to reduce spiking noise and avalanche signal can be easy detected. Finally, the avalanche signals are observed by scope or recorded by photon counter. Temperature of -30°C, gated frequency of 1 MHz, gated pulse of 2 ns and excess bias of 3.2 V, the best single-photon performances. In this study are : dark count probability of 2.48×10-3, single photon detection efficiency of 12.86 %, noise equipment power of 1.56×10-15 (W/Hz)1/2 and afterpulsing probability of 5.67 %.
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Chen, Cheng-Ju, e 陳政儒. "Characterization of InGaAs/InP Single Photon Avalanche Photodiode Based on Self-Differencing Mode". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/5de275.
Texto completo da fonteResumo:
碩士國立臺北科技大學
光電工程系研究所
98
In this thesis, we investigate the single photon detection ability of Avalanche Photodiode (APD) at 1550 nm and improve the single photon detection efficiency by using Self-Differencing technique. In order to apply this experimental setup to the Quantum Key Distribution (QKD) system, we have to discuss and analyze characteristic parameters of APD, including Dark Count Rate (DCR), Single Photon Detection Efficiency (SPDE), Noise Equipment Power (NEP) and Quantum Bit Error Rate (QBER). For the purpose of reducing the spike effect caused by the capacitance in the APD, we try to process the output signal from the conventional setup output using the Self-Differencing circuit for spike cancelling. Moreover, it can also significantly decrease discrimination level. At lower discrimination level can let us catch more avalanche signals and raise the detection performance. This setup makes it more efficient under the -50℃. In our experiment, we investigate the influence of single photon detection efficiency from different parameters, such as temperature, excess bias voltage, pulse width and gated frequency. To demonstrate the afterpulsing effect by releasing the trapped carriers in the lower temperature, we cool down the APD to the temperature of -70℃. We also choose the best parameters to calculate the results of Quantum Bit Error Rate (QBER) and the transmission distance in theory. All of that are prepared for the structuring a Quantum Key Distribution (QKD) system in the future studies. Finally, using the self-differencing schematic at a temperature of -50℃, with a repetition rate of 100 KHz, and the excess bias voltage of 3 V, the best single-photon detection efficiency of 17.43% and the equivalent noise power is as low as 1.92×10-15 W/Hz1/2 were obtained. It is found that the minimum dark count rate of 1.2×10-5 appears when the temperature is -60℃ and the excess bias voltage is 1.6 V. Using above condition, the corresponding back to back quantum bit error rate is 3.09%. The maximum available transmission distance is 42 Km in which the quantum bit error rate is expected below 15%.
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CHEN, JUN-YAN, e 陳鈞彥. "Fabrication and Measurement of High-speed InAlAs/InGaAs Avalanche Photodiode and InP Micro Lens". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/j98ua6.
Texto completo da fonteResumo:
碩士國立臺北科技大學
光電工程系
107
In the past few decades, avalanche photodiodes (APDs) have been widely used in long distance fiber-optic communication systems. In recent years, which more high-speed avalanche photodiodes are used in long or short distance fiber optic communication and laser rangefinder. The application of APD device is getting more and more attention. In terms of avalanche layer material selection, the lattice constant of indium aluminum arsenide (In0.52Al0.48As; InAlAs) is matched with indium gallium arsenide (In0.53Ga0.47As; InGaAs) and indium phosphide (InP), and InAlAs has a larger electron free coefficient than InP, which can obtain lower excess noise and higher gain bandwidth product. Therefore, the InAlAs material layer is more suitable as an avalanche layer material than InP material. In this paper, we developed an InAlAs/InGaAs APD with an absorber layer, graded layer, field-control layer, and an avalanche layer separation structure (SAGFM), and we discussed how to fabricate the InP microlens on the back-side of APD devices. This study includes: (1) Design of APD epitaxial structure, using simulation software to calculate electric field distribution to obtain the optimal epitaxial structure; (2) APD device mask design and device processing, (3) InP microlens fabrication on the back-side of APD device, (4) DC measurement and characteristic analysis; including capacitance, breakdown voltage, dark current, gain, and responsiveity; (5) AC measurement and characteristic analysis, including frequency response (f3dB) and eye diagram analysis. The InP micro lens fabricated and measured as follows: lens diameter is 70 μm, lens height is 8.61 μm, focal length is 110.19 μm, and radius of curvature is 75.43 μm. The focal length and beam width calculated by the ASAP optical simulation software are 109.31 μm and 17.36 μm, respectively. In addition, the performance of high-speed InAlAs/InGaAs structure APD: the breakdown voltage is 27.6V, the paunch-through voltage is 16.5V. The dark current is 67.9 nA and the gain is 8.87, and the capacitance is 0.204 pF, which APD was biased at 0.9 VBR. In the frequency response, the 3-dB bandwidth is 6.39 GHz when the laser input power is 1 μW and the gain at 5. In the part of the eye diagram measurement, when the laser input power of 0.1 mW and the bit rate of 10 Gb/s; the eye diagram analysis showed that the rise time is 62.5 ps.
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Shieh, Ming-Jinn, e 謝明進. "The Study and Fabrication of Passivation of GaSb and InGaSb Photodiodes". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/20279687997890981012.
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Tang, Hsuan-Ming, e 唐萱銘. "Fabrication of InP/InGaAs p-i-n Photodiode Using SU-8 Fiber Hole Passive Align Processing". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/6q4adz.
Texto completo da fonteResumo:
碩士國立臺北科技大學
光電工程系研究所
100
InP/InGaAs p-i-n photodiodes have been used widely in Optical communication. InP/InGaAs p-i-n photodiodes have high responsivity and high efficiency at the wavelength of 1310 nm and 1550 nm. Their performances are satisfied the requirements of optical fiber communication applications. In this paper, SU-8 fiber hole was formed upon the InP/InGaAs p-i-n photodiode for the object of passive alignment. Therefore we fabricated the SU-8 fiber hole structure over the light-active area of detector to reduce the coupling loss between fiber and detector. The epitaxial layers, which constitute of a cap layer of n-InP, an absorption layer of n-InGaAs, and an n-InP buffer layer, are grown by metal organic chemical vapor deposition (MOCVD). A Si3N4 film was deposited by plasma enhance chemical vapor deposition (PECVD). Photolithography and buffered oxide etchant (BOE) are used to etch Si3N4 and to obtain a diffusion mask. Open-tube method and solid Zinc source are applied for Zn-diffusion. We deposited Ti/AgZn/Ti on front-side and In on back-side by E-beam evaporation as ohmic contacts after RTA annealing. We successfully fabricated the detector with the active area of 20-μm、30-μm、40-μm、50-μm diameter. Next a single-mode fiber (SMF) was put into the SU-8 fiber hole which can be fixed and aligned directly into light-active center of the detector. For devices characterization, we first measure the dark current-voltage. When the device was biased at -5 V, the dark-current(ID) was < 20 pA. A 1550 nm DFB laser with power of 2 uW as a light source, the photo-current (Ip) of 1.7 uA and the photo-responsivity of > 0.8 A/W are obtained. Finally, the capacitance-voltage measurement and frequency response of the device with 50 um diameter are also measured. Capacitances of 1.165 pF and 3dB bandwidth of 3.24 GHz are obtained at -5 V, in this study.