Literatura científica selecionada sobre o tema "Indium selenid"
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Artigos de revistas sobre o assunto "Indium selenid"
Ivanauskas, Algimantas, Remigijus Ivanauskas e Ingrida Ancutiene. "Effect of In-Incorporation and Annealing on CuxSe Thin Films". Materials 14, n.º 14 (8 de julho de 2021): 3810. http://dx.doi.org/10.3390/ma14143810.
Texto completo da fonteSong, Nahong, Hong Ling, Yusheng Wang, Liying Zhang, Yuye Yang e Yu Jia. "Intriguing electronic properties of germanene/ indium selenide and antimonene/ indium selenide heterostructures". Journal of Solid State Chemistry 269 (janeiro de 2019): 513–20. http://dx.doi.org/10.1016/j.jssc.2018.10.031.
Texto completo da fonteKabanov V. F., Mikhailov A. I. e Gavrikov M. V. "Investigation of the features of electronic spectrum of quantum dots in narrow-gap semiconductors". Technical Physics Letters 48, n.º 8 (2022): 47. http://dx.doi.org/10.21883/tpl.2022.08.55061.19220.
Texto completo da fonteKaterynchuk, V. M. "Photoemission spectra of indium selenide". Semiconductor physics, quantum electronics and optoelectronics 9, n.º 4 (15 de dezembro de 2006): 36–39. http://dx.doi.org/10.15407/spqeo9.04.036.
Texto completo da fonteMassaccesi, Sylvie, Sylvie Sanchez e Jacques Vedel. "Electrodeposition of indium selenide in2se3". Journal of Electroanalytical Chemistry 412, n.º 1-2 (agosto de 1996): 95–101. http://dx.doi.org/10.1016/0022-0728(96)04604-9.
Texto completo da fonteKatee, Narjes Sadeq, Oday Ibraheem Abdullah e Emad Talib Hashim. "Extracting Four Solar Model Electrical Parameters of Mono-Crystalline Silicon (mc-Si) and Thin Film (CIGS) Solar Modules using Different Methods". Journal of Engineering 27, n.º 4 (29 de março de 2021): 16–32. http://dx.doi.org/10.31026/j.eng.2021.04.02.
Texto completo da fonteRamanujam, Jeyakumar, e Udai P. Singh. "Copper indium gallium selenide based solar cells – a review". Energy & Environmental Science 10, n.º 6 (2017): 1306–19. http://dx.doi.org/10.1039/c7ee00826k.
Texto completo da fonteNiu, Xianghong, Yunhai Li, Yehui Zhang, Qijing Zheng, Jin Zhao e Jinlan Wang. "Highly efficient photogenerated electron transfer at a black phosphorus/indium selenide heterostructure interface from ultrafast dynamics". Journal of Materials Chemistry C 7, n.º 7 (2019): 1864–70. http://dx.doi.org/10.1039/c8tc06208k.
Texto completo da fonteSun, Maojun, Wei Wang, Qinghua Zhao, Xuetao Gan, Yuanhui Sun, Wanqi Jie e Tao Wang. "ε-InSe single crystals grown by a horizontal gradient freeze method". CrystEngComm 22, n.º 45 (2020): 7864–69. http://dx.doi.org/10.1039/d0ce01271h.
Texto completo da fonteRahman, Md Ferdous, Mithun Chowdhury, Latha Marasamy, Mustafa K. A. Mohammed, Md Dulal Haque, Sheikh Rashel Al Ahmed, Ahmad Irfan, Aijaz Rasool Chaudhry e Souraya Goumri-Said. "Improving the efficiency of a CIGS solar cell to above 31% with Sb2S3 as a new BSF: a numerical simulation approach by SCAPS-1D". RSC Advances 14, n.º 3 (2024): 1924–38. http://dx.doi.org/10.1039/d3ra07893k.
Texto completo da fonteTeses / dissertações sobre o assunto "Indium selenid"
Wu, Wenyi. "Space Charge Doped p-n Junction : 2D Diode with Few-layer Indium Selenide". Electronic Thesis or Diss., Sorbonne université, 2020. http://www.theses.fr/2020SORUS449.
Texto completo da fonteThis work combines the singular properties of 2D materials with an innovative technique used for changing the electronic properties of ultra-thin films to propose a new technology for making the simplest bipolar electronic device, the diode. Firstly we identify semiconducting materials which can be fabricated in ultra-thin layers. Secondly, we use a proprietary technique called Space Charge Doping developed in our group for doping the material, either n or p. Finally, we obtain diode characteristics from the device. The manuscript begins with a review of different materials and properties. In the family of 2D materials, our choice was a III-VI layered semiconductor with a direct bandgap: InSe. We also chose a completely different kind of material, polycrystalline CdO, which is neither layered nor has a direct bandgap but is easy to fabricate in the ultra-thin film form and has high carrier mobility. After preliminary experiments, we chose InSe and fabricated devices of ultra-thin, few atomic layer InSe thin films. We chose to develop in parallel two different geometries for the p-n junction diode. We were able to obtain rectifying behavior for each geometry implying that our space charge doping approach was successful in producing microscopically, spatially differentiated doping in each device. We discuss the obtained I-V characteristics and the inherent limitations of the devices (local heating, hysteresis) and suggest improvements for future experiments and ways of obtaining more efficient and stable functioning and geometry as part of the perspectives of this thesis
Kamada, Rui. "Copper(indium,gallium)selenide film formation from selenization of mixed metal/metal-selenide precursors". Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 226 p, 2009. http://proquest.umi.com/pqdweb?did=1654501631&sid=4&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Texto completo da fonteHeath, Jennifer Theresa. "Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films /". view abstract or download file of text, 2002. http://wwwlib.umi.com/cr/uoregon/fullcit?p3072587.
Texto completo da fonteTypescript. Includes vita and abstract. Includes bibliographical references (leaves 143-148). Also available for download via the World Wide Web; free to University of Oregon users.
Jehl, Zacharie. "Realization of ultrathin Copper Indium Gallium Di-selenide (CIGSe) solar cells". Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112058/document.
Texto completo da fonteIn this thesis, we investigate on the possibility to realize ultrathin absorber Copper Indium Gallium Di-Selenide (CIGSe) solar cells, by reducing the CIGSe thickness from 2500 nm down to 100 nm, while conserving a high conversion efficiency.Using numerical modeling, we first study the evolution of the photovoltaic parameters when reducing the absorber thickness. A strong decrease of the efficiency of the solar cell is observed, mainly related to a reduced light absorption and carrier collection for thin and ultrathin CIGSe solar cells. Solutions to overcome these problems are proposed and the potential improvements are modeled; we show that front side (buffer layer, antireflection coating) and back side (reflective back contact, light scattering) engineering of an ultrathin device can potentially increase the conversion efficiency up to the level of a standard thick CIGSe solar cell.By using chemical bromine etching on a standard thick CIGSe layer, we realize solar cells with different absorber thicknesses and experimentally study the influence of the absorber thickness on the photovoltaic parameters of the devices. Experiments show a similar trends to that observed in numerical modeling.Front contact engineering on thin CIGSe solar cell is realized to increase the specific absorption in CIGSe, including alternative ZnS buffer, front ZnO:Al window texturation and anti-reflection coating. Substantial improvements are observed whatever the CIGSe thickness, with efficiencies higher that the default configuration.A back contact engineering at low temperature is realized by using an innovative approach combining chemical etching of the CIGSe and mechanical lift-off of the CIGSe from the original Molybdenum (Mo) substrate. New highly reflective materials previously incompatible with the standard solar cell process are used as back contact for thin and ultrathin CIGSe solar cells, and a comparative study between standard Mo back contact and alternative reflective Au back contact solar cells is performed. The Au back reflector significantly enhance the efficiency of solar cell with sub-micrometer absorbers compared to the standard Mo back reflector; an efficiency higher than 10 % on a 400 nm CIGSe is obtained with Au back contact (7.9% with standard Mo back contact). For further reduction of the absorber thickness down to 100-200 nm, numerical modeling show that a lambertian back reflector is needed to fully absorb the incident light in the CIGSe. An experimental proof of concept device with a CIGSe thickness of 200 nm and a lambertian back reflector is realized and characterized by reflection/transmission spectroscopy, and the experimental spectral response is determined by combining simulation and experimentally measured absorption. A short circuit current of 26 mA.cm-2 is determined with the lambertian back reflector, which is much higher than what is obtained for the same device with no reflector (15 mA.cm-2), and comparable to the short circuit current measured on a reference 2500 nm thick CIGSe solar cell (28 mA.cm-2). Lambertian back reflectors are therefore found to be the most effective way to enhance the efficiency of an ultrathin CIGSe solar cell up to the level of a reference thick CIGSe solar cell
Thompson, John O. "The importance of elemental stacking order and layer thickness in controlling the formation kinetics of copper indium diselenide /". Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6197.
Texto completo da fonteTypescript. Includes vita and abstract. Includes bibliographical references (leaves 81-84). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
Wasala, Milinda. "ELECTRONIC AND OPTO-ELECTRONIC TRANSPORT PROPERTIES OF FEW LAYER INDIUM SELENIDE FETS". OpenSIUC, 2019. https://opensiuc.lib.siu.edu/dissertations/1704.
Texto completo da fonteMyers, Hadley Franklin. "Studies on the effect of sodium in Bridgman-grown CuInSe₂". Thesis, McGill University, 2008. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=116020.
Texto completo da fonteFralaide, Michael Orcino. "Electrical Transport and Photoconduction of Ambipolar Tungsten Diselenide and n-type Indium Selenide". OpenSIUC, 2015. https://opensiuc.lib.siu.edu/theses/1824.
Texto completo da fonteStephens, Scott H. "Modeling optical properties of thin film copper(indium,gallium)selenide solar cells using spectroscopic ellipsometry". Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 0.69 Mb., 88 p, 2006. http://wwwlib.umi.com/dissertations/fullcit/1432297.
Texto completo da fonteDjebbar, El-hocine. "A DLTS study of copper indium diselenide". Thesis, University of Salford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391312.
Texto completo da fonteLivros sobre o assunto "Indium selenid"
J, Coutts T., Kazmerski Lawrence L e Wagner S, eds. Copper indium diselenide for photovoltaic applications. Amsterdam: Elsevier, 1986.
Encontre o texto completo da fonteUnited States. National Aeronautics and Space Administration., ed. Thin film, concentrator and multijunction space solar cells: Status and potential. [Washington, DC]: National Aeronautics and Space Administration, 1991.
Encontre o texto completo da fonteMagorrian, Samuel J. Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-25715-6.
Texto completo da fonteMaria, Faur, e United States. National Aeronautics and Space Administration., eds. Theoretical and experimental research in space photovoltaics: Final report research grant no. NAG3-658 for the period January 1986 - March 1995. Cleveland, Ohio: Cleveland State University, Electrical Engineering Dept., Space Photovoltaic Research Center, 1995.
Encontre o texto completo da fonteUnited States. National Aeronautics and Space Administration., ed. Theoretical and experimental research in space photovoltaics: Electrodeposition of CuInxGa₁-xSe₂ (CIGS) thin layers for CdS/CIGS solar cell applications : final report, NASA research grant no. NAG3-1692 for the period January 23, 1995 to April 22, 1995. [Cleveland, Ohio?]: The Center, 1997.
Encontre o texto completo da fonteMaria, Faur, e United States. National Aeronautics and Space Administration., eds. Theoretical and experimental research in space photovoltaics: Final report research grant no. NAG3-658 for the period January 1986 - March 1995. Cleveland, Ohio: Cleveland State University, Electrical Engineering Dept., Space Photovoltaic Research Center, 1995.
Encontre o texto completo da fonteUnited States. National Aeronautics and Space Administration., ed. Theoretical and experimental research in space photovoltaics: Electrodeposition of CuInxGa₁-xSe₂ (CIGS) thin layers for CdS/CIGS solar cell applications : final report, NASA research grant no. NAG3-1692 for the period January 23, 1995 to April 22, 1995. [Cleveland, Ohio?]: The Center, 1997.
Encontre o texto completo da fonteClark, Melanie L. Occurrence of selenium and mercury in surface water, Wind River Indian Reservation, Wyoming, 1995. Cheyenne, Wyo: U.S. Dept. of the Interior, U.S. Geological Survey, 1996.
Encontre o texto completo da fonteClark, Melanie L. Occurrence of selenium and mercury in surface water, Wind River Indian Reservation, Wyoming, 1995. Cheyenne, Wyo: U.S. Dept. of the Interior, U.S. Geological Survey, 1996.
Encontre o texto completo da fonteClark, Melanie L. Occurrence of selenium and mercury in surface water, Wind River Indian Reservation, Wyoming, 1995. Cheyenne, Wyo: U.S. Dept. of the Interior, U.S. Geological Survey, 1996.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Indium selenid"
Farmer, Thomas. "Indium Selenide". In Structural Studies of Liquids and Glasses Using Aerodynamic Levitation, 99–110. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-06575-5_7.
Texto completo da fontePredel, B. "In - Se (Indium - Selenium)". In Dy - Er … Ir - Y, 233–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-24778-1_149.
Texto completo da fonteJulien, C., e M. Jouanne. "Optical studies of lithium intercalated indium selenide". In Chemical Physics of Intercalation, 433–36. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4757-9649-0_34.
Texto completo da fonteHerrero Rueda, J., e J. Ortega. "Electrochemically Grown Indium Selenide Thin Films For Pec’s Solar Cells". In Seventh E.C. Photovoltaic Solar Energy Conference, 1217–19. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_220.
Texto completo da fonteRhyee, Jong-Soo. "The Peierls Distortion and Quasi-One-Dimensional Crystalline Materials of Indium Selenides". In Thermoelectric Nanomaterials, 95–122. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37537-8_5.
Texto completo da fonteBhalerao, A. B., S. B. Jambure, R. N. Bulakhe, S. S. Kahandal, S. D. Jagtap, A. G. Banpurkar, A. W. M. H. Ansari, Insik In e C. D. Lokhande. "Substrate-Assisted Electrosynthesis of Patterned Lamellar Type Indium Selenide (InSe) Layer for Photovoltaic Application". In Proceedings of the 7th International Conference on Advances in Energy Research, 837–45. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5955-6_79.
Texto completo da fonteBhalerao, A. B., S. B. Jambure, R. N. Bulakhe, S. S. Kahandal, S. D. Jagtap, A. W. M. H. Ansari, Insik In e C. D. Lokhande. "Correction to: Substrate-Assisted Electrosynthesis of Patterned Lamellar Type Indium Selenide (InSe) Layer for Photovoltaic Application". In Proceedings of the 7th International Conference on Advances in Energy Research, C1. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-5955-6_161.
Texto completo da fonteMagorrian, Samuel J. "Introduction". In Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide, 1–11. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-25715-6_1.
Texto completo da fonteMagorrian, Samuel J. "Tight-Binding Model". In Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide, 13–33. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-25715-6_2.
Texto completo da fonteMagorrian, Samuel J. "Hybrid $$\mathbf {k\cdot p}$$ Tight-Binding Theory". In Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide, 35–60. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-25715-6_3.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Indium selenid"
Vittoe, Robert L., Tung Ho, Sudhir Shrestha, Mangilal Agarwal e Kody Varahramyan. "All Solution-Based Fabrication of CIGS Solar Cell". In ASME 2013 International Manufacturing Science and Engineering Conference collocated with the 41st North American Manufacturing Research Conference. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/msec2013-1239.
Texto completo da fonteLee, Heon, e Dae-hwan Kang. "Indium selenide based phase change memory". In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.p10-4.
Texto completo da fonteDong, Chaobo, Chandraman Patil, Hao Wang, Sergiy Krylyuk, Albert Davydov, Hamed Dalir e Volker J. Sorger. "Ultralow Energy van der Waals InSe PN junction heterostructure photodetector for NIR applications". In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jth3b.31.
Texto completo da fonteOh, Thomas I., e Paul Hanke. "IR transparent conductive coatings by rf and dc magnetrons". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.wp4.
Texto completo da fonteMalik, S. N., H. Ahmed, M. Shahid, N. Haider, M. A. Malik e P. O'Brien. "Colloidal preparation of copper selenide and indium selenide nanoparticles by single source precursors approach". In 2013 10th International Bhurban Conference on Applied Sciences and Technology (IBCAST 2013). IEEE, 2013. http://dx.doi.org/10.1109/ibcast.2013.6512127.
Texto completo da fonteMenezes, Shalini, e Yan Li. "Large area deposition of widegap copper indium selenide absorbers". In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6745010.
Texto completo da fonteLi, Shina, e RuiXin Ma. "Studies of copper indium Di-selenide powder fabrication technologies". In 2011 International Conference on Electrical and Control Engineering (ICECE). IEEE, 2011. http://dx.doi.org/10.1109/iceceng.2011.6058222.
Texto completo da fonteUrmila, K. S., T. Namitha Asokan, B. Pradeep, Rajani Jacob e Rachel Reena Philip. "Photoconductivity in reactively evaporated copper indium selenide thin films". In OPTOELECTRONIC MATERIALS AND THIN FILMS: OMTAT 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4861984.
Texto completo da fonteRashid Ullah, Muhammad, Aimal Daud Khan e Javed Iqbal. "Optimization of Efficient Copper-Indium-Gallium Di-Selenide Solar Cell". In 2019 International Conference on Electrical, Communication, and Computer Engineering (ICECCE). IEEE, 2019. http://dx.doi.org/10.1109/icecce47252.2019.8940744.
Texto completo da fonteHibberd, C. J., M. Ganchev, M. Kaelin, K. Ernits e A. N. Tiwari. "Incorporation of copper into indium gallium selenide layers from solution". In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922885.
Texto completo da fonteRelatórios de organizações sobre o assunto "Indium selenid"
Rasmussen, Anya Marie. Pressure-induced phase transitions of indium selenide. Office of Scientific and Technical Information (OSTI), maio de 2016. http://dx.doi.org/10.2172/1469335.
Texto completo da fonteKatzman, Daniel B. Design and Optimization of Copper Indium Gallium Selenide Thin Film Solar Cells. Fort Belvoir, VA: Defense Technical Information Center, setembro de 2015. http://dx.doi.org/10.21236/ad1009063.
Texto completo da fonteOccurrence of selenium and mercury in surface water, Wind River Indian Reservation, Wyoming, 1995. US Geological Survey, 1996. http://dx.doi.org/10.3133/wri964159.
Texto completo da fonte