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Artigos de revistas sobre o tema "Implanted diamond"

Autor: Grafiati

Publicado: 8 de março de 2025

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1

Khomich, Andrey A., Alexey Popovich e Alexander V. Khomich. "Photoluminescence Spectra of Helium Ion-Implanted Diamond". Materials 17, n.º 21 (23 de outubro de 2024): 5168. http://dx.doi.org/10.3390/ma17215168.

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Ion implantation in diamond crystals is widely used both for producing conducting microstructures in the bulk of the material and for creating isolated photon emitters in quantum optics, photonics, cryptography, and biosensorics. The photoluminescence (PL) spectra of helium ion-implanted diamonds are dominated by two sharp emission lines, HR1 and HR2 (from Helium-Related), at ~536 and 560 nm. Here, we report on PL studies of helium-related optical centers in diamonds. Experiments have been carried out on a (110) plate of natural single-crystal type IIa diamonds. The uniform distribution of radiation defects in a 700 nm-thick layer was obtained by ten cycles of multiple-energy (from 24 to 350 kV) helium ion implantation with a total dose of 5 × 1016 cm−2. The diamonds were annealed in steps in a vacuum oven at temperatures from 200 to 1040 °C. It is demonstrated that helium ion implantation in diamonds followed by annealing gives rise to more than a dozen various centers that are observed in the PL spectra in the range of 530–630 nm. The transformations of the PL spectra due to annealing are investigated in detail. The spectral shapes of phonon sidebands are determined for the HR1, HR2, and HR3 bands with ZPLs at ~536, 560, and 577 nm, respectively, and it is shown that these bands are attributed to interstitial-related centers in diamonds. The reported results are important for understanding the structure and properties of helium-related defects in diamonds.

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2

Chen, Huang-Chin, Umesh Palnitkar, Huan Niu, Hsiu-Fung Cheng e I.-Nan Lin. "The Effect of Ion Implantation on Field Emission Property of Nanodiamond Films". Journal of Nanoscience and Nanotechnology 8, n.º 8 (1 de agosto de 2008): 4141–45. http://dx.doi.org/10.1166/jnn.2008.an50.

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Nanocrystalline diamond films prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) were implanted using 110 keV nitrogen ions under fluence ranging from 1013–1014 ions/cm2. Scanning Electron Microscopy (SEM) and Raman spectroscopy were used to analyze the changes in the surface of the films before and after ion implantation. Results show that with nitrogen ion implantation in nanocrystalline diamond film cause to decrease in diamond crystallinity. The field emission measurement shows a sharp increase in current density with increase in dose. The ion implantation also alters the turn on field. It is observed that the structural damage caused by ion implantation plays a significant role in emission behaviour of nanocrystalline diamonds.

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3

Negmatova, Kamola, Abdusattor Daminov, Abdusalam Umarov e Nodira Аbed. "Synthesis of diamonds in the C – Mn - Ni - (H) system and the diamond-shaped mechanism". E3S Web of Conferences 264 (2021): 05003. http://dx.doi.org/10.1051/e3sconf/202126405003.

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Studying the dependence of the degree (α) and rate (ϑ) of the phase transformation of graphite into diamond on the synthesis time at different temperatures of the developed synthetic diamonds using the technology of high-pressure high-temperature synthesis in a metal melt (HPHT), we determined the critical mass of diamonds, which indicates the entry of the system into the stability region of graphite, where the graphitization of diamonds occurs. The role of implanted metals and hydrogen in the formation of synthetic diamonds and on its properties was also investigated.

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4

Zhongquan, Ma, e H. Naramoto. "Homoepitaxial layer from ion-implanted diamond". Solid-State Electronics 41, n.º 3 (março de 1997): 487–92. http://dx.doi.org/10.1016/s0038-1101(96)00190-6.

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5

ZAITSEV, ER M., REJ V. DENISENKO, GABRIELE KOSACA, REINHART JOB, WOLFGANG R. FAHRNER, ER A. MELNIKOV, VALERY S. VARICHENKO, BERND BUCHARD, JOHANNES VON BORANY e MATTHIAS WERNER. "Electronic Devices on Ion Implanted Diamond". Journal of Wide Bandgap Materials 7, n.º 1 (1 de julho de 1999): 4–67. http://dx.doi.org/10.1106/74cc-m5wa-ypm5-uhcn.

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6

Batory, D., J. Gorzedowski, B. Rajchel, W. Szymanski e L. Kolodziejczyk. "Silver implanted diamond-like carbon coatings". Vacuum 110 (dezembro de 2014): 78–86. http://dx.doi.org/10.1016/j.vacuum.2014.09.001.

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7

Spits, R. A., T. E. Derry e J. F. Prins. "Annealing studies on ion implanted diamond". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 64, n.º 1-4 (fevereiro de 1992): 210–14. http://dx.doi.org/10.1016/0168-583x(92)95467-6.

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8

Höhne, R., P. Esquinazi, V. Heera e H. Weishart. "Magnetic properties of ion-implanted diamond". Diamond and Related Materials 16, n.º 8 (agosto de 2007): 1589–96. http://dx.doi.org/10.1016/j.diamond.2007.01.019.

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9

Deguchi, Masahiro, Makoto Kitabatake, Takashi Hirao, Yusuke Mori, Jing Sheng Ma, Toshimichi Ito e Akio Hiraki. "Diamond growth on carbon-implanted silicon". Applied Surface Science 60-61 (janeiro de 1992): 291–95. http://dx.doi.org/10.1016/0169-4332(92)90431-v.

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10

Bharuth-Ram, K., S. Connell, J. P. F. Sellschop, M. C. Stemmet, H. Appel e G. M. Then. "TDPAD studies on19F implanted into diamond". Hyperfine Interactions 34, n.º 1-4 (março de 1987): 189–92. http://dx.doi.org/10.1007/bf02072700.

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11

Filipp, A. R., V. V. Tkachev, V. S. Varichenko, A. M. Zaitsev, A. R. Chelyadinskii e Yu A. Kluev. "Diffusion of implanted nickel in diamond". Diamond and Related Materials 1, n.º 2-4 (março de 1992): 271–76. http://dx.doi.org/10.1016/0925-9635(92)90038-p.

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12

Weiser, P. S., S. Prawer, K. W. Nugent, A. A. Bettiol, L. I. Kostidis e D. N. Jamieson. "Homo-epitaxial diamond film growth on ion implanted diamond substrates". Diamond and Related Materials 5, n.º 3-5 (abril de 1996): 272–75. http://dx.doi.org/10.1016/0925-9635(95)00423-8.

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13

Ong, T. P., Fulin Xiong, R. P. H. Chang e C. W. White. "Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces". Journal of Materials Research 7, n.º 9 (setembro de 1992): 2429–39. http://dx.doi.org/10.1557/jmr.1992.2429.

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The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (∊820 °C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈11$\overline 1$0〉graphite. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

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14

Yan, Cui Xia. "Study of Radiation Damage in Diamond Film Implanted by B Ion". Applied Mechanics and Materials 455 (novembro de 2013): 54–59. http://dx.doi.org/10.4028/www.scientific.net/amm.455.54.

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The radiation damage and its distribution in the type-Ib diamond film implanted by B ion have been investigated by means of Raman scattering and X-ray diffraction spectra. It is of significance during the applications of diamond materials due to several phenomena related to B-doped diamond, such as the superconductivity, the conversion of p-type to n-type conductivity and the low resistivity. The Raman scatting spectra indicated that the radiation damage in implantation layer was various with implantation depth. The top layer was damaged badly and graphitized completely. There existed small damage in nether layer, which resulted in partly amorphous carbon. It was noted that the volume was expanded in diamond film implanted by B ion. By x-ray diffraction pattern, it was reckoned that the lattice parameter was enlarged in B-implanting diamond layer, which expanded the volume of diamond film.

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15

Gippius, A. A. "Impurity-Defect Reactions in Ion-Implanted Diamond". Materials Science Forum 83-87 (janeiro de 1992): 1219–24. http://dx.doi.org/10.4028/www.scientific.net/msf.83-87.1219.

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16

Pécz, Béla, Á. Barna, V. Heera, F. Fontaine e Wolfgang Skorupa. "TEM Investigation of Si Implanted Natural Diamond". Materials Science Forum 353-356 (janeiro de 2001): 199–204. http://dx.doi.org/10.4028/www.scientific.net/msf.353-356.199.

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17

Hausmann, Birgit J. M., Thomas M. Babinec, Jennifer T. Choy, Jonathan S. Hodges, Sungkun Hong, Irfan Bulu, Amir Yacoby, Mikhail D. Lukin e Marko Lončar. "Single-color centers implanted in diamond nanostructures". New Journal of Physics 13, n.º 4 (5 de abril de 2011): 045004. http://dx.doi.org/10.1088/1367-2630/13/4/045004.

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18

Allen, M. G., S. Prawer, D. N. Jamieson e R. Kalish. "Pulsed laser annealing of P‐implanted diamond". Applied Physics Letters 63, n.º 15 (11 de outubro de 1993): 2062–64. http://dx.doi.org/10.1063/1.110592.

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19

Hoff, H. A., D. J. Vestyck, J. E. Butler e J. F. Prins. "Ion implanted, outdiffusion produced diamond thin films". Applied Physics Letters 62, n.º 1 (4 de janeiro de 1993): 34–36. http://dx.doi.org/10.1063/1.108810.

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20

Zhu, W., G. P. Kochanski, S. Jin, L. Seibles, D. C. Jacobson, M. McCormack e A. E. White. "Electron field emission from ion‐implanted diamond". Applied Physics Letters 67, n.º 8 (21 de agosto de 1995): 1157–59. http://dx.doi.org/10.1063/1.114993.

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21

Khmelnitskiy, R. A., E. V. Zavedeev, A. V. Khomich, A. V. Gooskov e A. A. Gippius. "Blistering in diamond implanted with hydrogen ions". Vacuum 78, n.º 2-4 (maio de 2005): 273–79. http://dx.doi.org/10.1016/j.vacuum.2005.01.038.

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22

Doyle, B. P., J. K. Dewhurst, J. E. Lowther e K. Bharuth-Ram. "Lattice locations of indium implanted in diamond". Physical Review B 57, n.º 9 (1 de março de 1998): 4965–67. http://dx.doi.org/10.1103/physrevb.57.4965.

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23

Correia, J. G., J. G. Marques, E. Alves, D. Forkel-Wirth, S. G. Jahn, M. Restle, M. Dalmer, H. Hofsäss e K. Bharuth-Ram. "Microscopic studies of implanted 73As in diamond". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 127-128 (maio de 1997): 723–26. http://dx.doi.org/10.1016/s0168-583x(96)01165-2.

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24

Hunn, J. D., N. R. Parikh, M. L. Swanson e R. A. Zuhr. "Conduction in ion-implanted single-crystal diamond". Diamond and Related Materials 2, n.º 5-7 (abril de 1993): 847–51. http://dx.doi.org/10.1016/0925-9635(93)90236-u.

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25

Sathekge, M. N., e J. E. Lowther. "Surface interactions on boron implanted into diamond". Diamond and Related Materials 4, n.º 2 (fevereiro de 1995): 145–48. http://dx.doi.org/10.1016/0925-9635(94)00238-x.

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26

Prins, Johan F. "Ion-implanted n-type diamond: electrical evidence". Diamond and Related Materials 4, n.º 5-6 (maio de 1995): 580–85. http://dx.doi.org/10.1016/0925-9635(94)05261-1.

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27

Fontaine, F., E. Gheeraert e A. Deneuville. "Conduction mechanisms in boron implanted diamond films". Diamond and Related Materials 5, n.º 6-8 (maio de 1996): 752–56. http://dx.doi.org/10.1016/0925-9635(95)00383-5.

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28

Burchard, A., M. Restle, M. Deicher, H. Hofsäss, S. G. Jahn, Th König, R. Magerle, W. Pfeiffer e U. Wahl. "Microscopic characterisation of heavy-ion implanted diamond". Physica B: Condensed Matter 185, n.º 1-4 (abril de 1993): 150–53. http://dx.doi.org/10.1016/0921-4526(93)90229-y.

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29

Ma, Z. Q., B. X. Liu, H. Naramoto, Y. Aoki, S. Yamamoto, H. Takeshita e P. C. Goppelt-Langer. "Non-destructive characterization of ion-implanted diamond". Vacuum 55, n.º 3-4 (dezembro de 1999): 207–17. http://dx.doi.org/10.1016/s0042-207x(99)00153-0.

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30

Connell, S., K. Bharuth-Ram, H. Appel, J. P. F. Sellschop e M. Stemmet. "Residence sites for19F ions implanted into diamond". Hyperfine Interactions 36, n.º 3-4 (outubro de 1987): 185–200. http://dx.doi.org/10.1007/bf02395628.

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31

Bharuth-Ram, K., Bernd Ittermann, H. Metzner, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai et al. "Investigation of Ion-Implanted Boron in Diamond". Materials Science Forum 258-263 (dezembro de 1997): 763–68. http://dx.doi.org/10.4028/www.scientific.net/msf.258-263.763.

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32

Hunn, J. D., S. P. Withrow, C. W. White e D. M. Hembree. "Raman scattering from MeV-ion implanted diamond". Physical Review B 52, n.º 11 (15 de setembro de 1995): 8106–11. http://dx.doi.org/10.1103/physrevb.52.8106.

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33

Smallman, C. G., R. W. Fearick e T. E. Derry. "Lattice location of implanted fluorine in diamond". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (junho de 1993): 196–200. http://dx.doi.org/10.1016/0168-583x(93)96106-m.

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34

Hasegawa, M., Y. Yamamoto, H. Watanabe, H. Okushi, M. Watanabe e T. Sekiguchi. "Characterisation of nitrogen-implanted CVD homoepitaxial diamond". Diamond and Related Materials 13, n.º 4-8 (abril de 2004): 600–603. http://dx.doi.org/10.1016/j.diamond.2003.11.053.

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35

Sicignano, F., A. Vellei, M. C. Rossi, G. Conte, S. Lavanga, C. Lanzieri, A. Cetronio e V. Ralchenko. "MESFET fabricated on deuterium-implanted polycrystalline diamond". Diamond and Related Materials 16, n.º 4-7 (abril de 2007): 1016–19. http://dx.doi.org/10.1016/j.diamond.2006.11.096.

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36

Heera, V., R. Höhne, O. Ignatchik, H. Reuther e P. Esquinazi. "Absence of superconductivity in boron-implanted diamond". Diamond and Related Materials 17, n.º 3 (março de 2008): 383–89. http://dx.doi.org/10.1016/j.diamond.2008.01.057.

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37

Tsubouchi, Nobuteru, M. Ogura, H. Watanabe, Akiyoshi Chayahara e Hideyo Okushi. "Diamond Doped by Hot Ion Implantation". Materials Science Forum 600-603 (setembro de 2008): 1353–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1353.

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Multiple P or S hot ion implantation to diamond substrates was performed at 800°C. Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs. Temperature dependence of resistance demonstrated that a P as-implanted sample using a homoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, a presence of a weak doping effect was observed in an as-implanted sample, but it was suggested that the dopant is not S itself but S and defect complex. However, post-implantation annealing resulted in high resistance of the samples and missing of such weak doping effects.

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38

Alkahtani, Masfer. "Silicon Vacancy in Boron-Doped Nanodiamonds for Optical Temperature Sensing". Materials 16, n.º 17 (30 de agosto de 2023): 5942. http://dx.doi.org/10.3390/ma16175942.

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Boron-doped nanodiamonds (BNDs) have recently shown a promising potential in hyperthermia and thermoablation therapy, especially in heating tumor cells. To remotely monitor eigen temperature during such operations, diamond color centers have shown a sensitive optical temperature sensing. Nitrogen-vacancy (NV) color center in diamonds have shown the best sensitivity in nanothermometry; however, spin manipulation of the NV center with green laser and microwave-frequency excitations is still a huge challenge for biological applications. Silicon-vacancy (SiV) color center in nano/bulk diamonds has shown a great potential to be a good replacement of the NV center in diamond as it can be excited and detected within the biological transparency window and its thermometry operations depends only on its zero-phonon line (ZPL) shift as a function of temperature changes. In this work, BNDs were carefully etched on smooth diamond nanocrystals’ sharp edges and implanted with silicon for optical temperature sensing. Optical temperature sensing using SiV color centers in BNDs was performed over a small range of temperature within the biological temperature window (296–308 K) with an excellent sensitivity of 0.2 K in 10 s integration time. These results indicate that there are likely to be better application of more biocompatible BNDs in hyperthermia and thermoablation therapy using a biocompatible diamond color center.

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39

Erchak, D. P., V. G. Efimov, I. I. Azarko, A. V. Denisenko, N. M. Penina, V. F. Stelmakh, V. S. Varichenko et al. "Electron paramagnetic resonance of boron-implanted natural diamonds and epitaxial diamond films". Diamond and Related Materials 2, n.º 8 (maio de 1993): 1164–67. http://dx.doi.org/10.1016/0925-9635(93)90163-v.

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40

Singer, I. L., R. G. Vardiman e R. N. Bolster. "Polishing wear resistance of ion-implanted 304 steel". Journal of Materials Research 3, n.º 6 (dezembro de 1988): 1134–43. http://dx.doi.org/10.1557/jmr.1988.1134.

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Steel (AISI-304) disks, polished to a 3 μm diamond finish, were implanted to doses of about 2 × 1017/cm2 with N+, Ni+ or, Ne+, ions. Polishing wear rates, measured to a depth resolution of about 20 nm, showed that each of the implanted disks wore 20% to 40% faster than nonimplanted layers. Auger analysis showed (1) Gaussian-like profiles of the N-implanted layer, but with somewhat enhanced oxidation of the surface, and (2) a sputter-limited implantation profile in the Ni-implantcd layer, with some vacuum carburization. Transmission electron microscope analysis indicated that polishing produced an α′-martensite layer in the mainly austenitic 304 surface, but that implantation of N transformed the martensite to austenite at the outermost layers and produced iron nitrides below. In addition. Nimplantation stabilized the austenite against martensite transformation during subsequent wear. Martensite vanished after Ni implantation because of sputter removal, not phase transformation, during Ni bombardment. The Ne-implanted layer remained predominantly martensite. Changes in wear rates and microstructures were confined to depths commensurate with the range of ions in the implanted layer. Several hypotheses on the effects of ion implantation on microstructureand wear are discussed.

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41

Auciello, Orlando. "A new generation of transformational long implanted life dental implants". Open Access Government 43, n.º 1 (8 de julho de 2024): 234–35. http://dx.doi.org/10.56367/oag-043-10714.

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A new generation of transformational long implanted life dental implants Unique low-cost/best biocompatible Ultrananocrystalline Diamond (UNCD™) coating enables a new generation of transformational long implanted life dental implants. This article summarizes the materials science/properties, integration strategies, and design/development of a new generation of dental implants (DIs) based on coating commercial Ti-alloy (Ti-6Al-4V) DIs with a unique transformational/low-cost/best biocompatible (because they are made of carbon atoms/element of life in human DNA/cells/molecules) ultrananocrystalline diamond (UNCD) coating.

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42

Mukherjee, Pritam, e Indu Singh. "Nanodiamonds: Advanced carriers for anticancer drug delivery". Acta Pharmaceutica Hungarica 93 (2023): 34–44. https://doi.org/10.33892/aph.2023.93.34-44.

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Diamond nanoparticles discovery and extensive applications in modern biosciences. Because of its excellent biocompatibility, it serves as useful platforms that can be implanted within polymer-based microfilm devices. Nano-diamonds complex with a chemotherapeutic show sustained release of the drug for a month, with a significant amount of drug in reserve. It serves the potential for highly localized drug release as a complementary and potent form of treatment with systemic injection towards the reduction of continuous dose, and as such, attenuation of the often-powerful side effects of chemotherapy. Nano-diamonds are very economical, allowing the wide impact of these devices for a range of physiological disorders like supporting as a local chemotherapeutic patch, or as a pericardial device to suppress inflammation after open heart surgery. Nano-diamond patch could be used to treat a localized region where residual cancer cells might remain after a tumour is removed. Nano-diamonds may be used to discover a wide range of therapeutic classes, including small molecules, proteins, therapeutic antibodies, RNAi.

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43

Hasegawa, Mitsuru, M. Ogura, Daisuke Takeuchi, Sadanori Yamanaka, Hideyuki Watanabe, Shien Ri, Naoto Kobayashi, Hideyo Okushi e Takashi Sekiguchi. "Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond". Solid State Phenomena 78-79 (abril de 2001): 171–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.78-79.171.

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44

Bharuth‐Ram, K., H. Quintel, M. Restle, C. Ronning, H. Hofsäss e S. G. Jahn. "Lattice sites of arsenic ions implanted in diamond". Journal of Applied Physics 78, n.º 8 (15 de outubro de 1995): 5180–82. http://dx.doi.org/10.1063/1.359753.

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45

Brewer, M. A., I. G. Brown, P. J. Evans e A. Hoffman. "Diamond film growth on Ti‐implanted glassy carbon". Applied Physics Letters 63, n.º 12 (20 de setembro de 1993): 1631–33. http://dx.doi.org/10.1063/1.110718.

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46

Gorbatkin, S. M., R. A. Zuhr, J. Roth e H. Naramoto. "Damage formation and substitutionality in 75As++‐implanted diamond". Journal of Applied Physics 70, n.º 6 (15 de setembro de 1991): 2986–90. http://dx.doi.org/10.1063/1.349326.

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47

Mori, Yusuke, Masahiro Deguchi, Takashi Okada, Nobuhiro Eimori, Hiromasa Yagi, Akimitsu Hatta, Kazuhito Nishimura et al. "Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films". Japanese Journal of Applied Physics 32, Part 2, No. 4B (15 de abril de 1993): L601—L603. http://dx.doi.org/10.1143/jjap.32.l601.

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48

Miyagawa, S., M. Ikeyama, S. Nakao, K. Saitoh, Y. Miyagawa, K. Baba e R. Hatada. "Tribological properties of nitrogen implanted diamond-like carbon". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148, n.º 1-4 (janeiro de 1999): 659–63. http://dx.doi.org/10.1016/s0168-583x(98)00790-3.

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