Artigos de revistas sobre o tema "III-V technology"
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Lile, D. L. "Advanced III–V semiconductor materials technology assessment". Thin Solid Films 141, n.º 2 (agosto de 1986): L93—L94. http://dx.doi.org/10.1016/0040-6090(86)90363-9.
Texto completo da fontePEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY". International Journal of Modern Physics B 07, n.º 28 (30 de dezembro de 1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.
Texto completo da fonteZhang, John H., Stan Tsai, Charan Surisetty, Jody Fronheiser, Shariq Siddiqui, Steven Bentley, Raghuveer Patlolla, Donald F. Canaperi, Walter Kleemeier e Cathy Labelle. "CMP Challenges for Advanced Technology Nodes beyond Si". MRS Advances 2, n.º 51 (2017): 2891–902. http://dx.doi.org/10.1557/adv.2017.339.
Texto completo da fonteHuber, A. M., e C. Grattepain. "Crystal Defect Study in III-V Compound Technology". Materials Science Forum 38-41 (janeiro de 1991): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1345.
Texto completo da fonteBeneking, Heinz. "III–V Technology: The Key for Advanced Devices". Journal of The Electrochemical Society 136, n.º 9 (1 de setembro de 1989): 2680–86. http://dx.doi.org/10.1149/1.2097549.
Texto completo da fonteHasegawa, Hideki, e Masamichi Akazawa. "Surface passivation technology for III–V semiconductor nanoelectronics". Applied Surface Science 255, n.º 3 (novembro de 2008): 628–32. http://dx.doi.org/10.1016/j.apsusc.2008.07.002.
Texto completo da fonteLiliental-Weber, Z., M. Li, G. S. Li, C. Chang-Hasnain e E. R. Weber. "Structure of III-V oxides". Proceedings, annual meeting, Electron Microscopy Society of America 54 (11 de agosto de 1996): 942–43. http://dx.doi.org/10.1017/s0424820100167172.
Texto completo da fonteThakur, R. P. S., R. Singh, A. J. Nelson e A. B. Swartzlander. "Role ofinsiturapid isothermal processing in advanced III‐V technology". Journal of Applied Physics 70, n.º 7 (outubro de 1991): 3857–61. http://dx.doi.org/10.1063/1.349191.
Texto completo da fontePearton, S. J., F. Ren, S. N. G. Chu, W. S. Hobson, C. R. Abernathy, T. R. Fullowan, J. R. Lothian, R. G. Elliman, D. C. Jacobson e J. M. Poate. "Applications of ion implantation in III–V device technology". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 79, n.º 1-4 (junho de 1993): 648–50. http://dx.doi.org/10.1016/0168-583x(93)95434-7.
Texto completo da fonteDutta, P. S. "III–V Ternary bulk substrate growth technology: a review". Journal of Crystal Growth 275, n.º 1-2 (fevereiro de 2005): 106–12. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.073.
Texto completo da fonteMiyauchi, Eizo, e Hisao Hashimoto. "Maskless ion implantation technology for III–V compound semiconductors". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 (março de 1985): 851–57. http://dx.doi.org/10.1016/0168-583x(85)90482-3.
Texto completo da fonteHirano, Koki. "AWPP 2011 Report Injection Molding & Mold Technology III~V". Seikei-Kakou 24, n.º 3 (20 de fevereiro de 2012): 148. http://dx.doi.org/10.4325/seikeikakou.24.148.
Texto completo da fonteShahrjerdi, D., S. W. Bedell, B. Hekmatshoar, C. Bayram e D. Sadana. "(Invited) New Paradigms for Cost-Effective III-V Photovoltaic Technology". ECS Transactions 50, n.º 40 (1 de abril de 2013): 15–22. http://dx.doi.org/10.1149/05040.0015ecst.
Texto completo da fonteVitanov, P., M. Milanova, E. Goranova, Ch Dikov, Pl Ivanov e V. Bakardjieva. "Solar cell technology on the base of III–V heterostructures". Journal of Physics: Conference Series 253 (1 de novembro de 2010): 012044. http://dx.doi.org/10.1088/1742-6596/253/1/012044.
Texto completo da fonteHashimoto, H., e E. Miyauchi. "Finely focused ion beam technology in III-V compound semiconductors". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (janeiro de 1987): 381–87. http://dx.doi.org/10.1016/s0168-583x(87)80075-7.
Texto completo da fonteAlles, David S., e Kevin J. Brady. "Packaging Technology for III-V Photonic Devices and Integrated Circuits". AT&T Technical Journal 68, n.º 1 (2 de janeiro de 1989): 83–92. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00648.x.
Texto completo da fonteThadathil, George. "Editorial: Technology and Evolving Social Spaces". SALESIAN JOURNAL OF HUMANITIES & SOCIAL SCIENCES 4, n.º 1 (1 de maio de 2013): v—iii. http://dx.doi.org/10.51818/sjhss.04.2013.v-iii.
Texto completo da fontePacella, Nan Y., Kunal Mukherjee, Mayank T. Bulsara e Eugene A. Fitzgerald. "Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials". ECS Journal of Solid State Science and Technology 2, n.º 7 (2013): P324—P331. http://dx.doi.org/10.1149/2.015307jss.
Texto completo da fonteNISHIYAMA, Nobuhiko. "Low-Temperature Direct Bonding Technology for III-V/Si Heterogeneous Integration". Review of Laser Engineering 48, n.º 10 (2020): 520. http://dx.doi.org/10.2184/lsj.48.10_520.
Texto completo da fonteCross, T. A., e C. R. Huggins. "Advanced single crystal III-V solar cell technology and its applications". Renewable Energy 6, n.º 3 (abril de 1995): 283–90. http://dx.doi.org/10.1016/0960-1481(95)00021-b.
Texto completo da fonteLong, A. P., e I. G. Eddison. "Advanced III–V HEMT technology for microwave and millimetre-wave applications". Microelectronic Engineering 19, n.º 1-4 (setembro de 1992): 389–95. http://dx.doi.org/10.1016/0167-9317(92)90460-9.
Texto completo da fonteQuay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John e Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology". ECS Meeting Abstracts MA2023-01, n.º 33 (28 de agosto de 2023): 1853. http://dx.doi.org/10.1149/ma2023-01331853mtgabs.
Texto completo da fonteQuay, Ruediger, Arnulf Leuther, Sebastien Chartier, Laurenz John e Axel Tessmann. "(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology". ECS Transactions 111, n.º 1 (19 de maio de 2023): 117–22. http://dx.doi.org/10.1149/11101.0117ecst.
Texto completo da fontePEARTON, S. J. "REACTIVE ION ETCHING OF III–V SEMICONDUCTORS". International Journal of Modern Physics B 08, n.º 14 (30 de junho de 1994): 1781–876. http://dx.doi.org/10.1142/s0217979294000762.
Texto completo da fonteMcMORROW, DALE, JOSEPH S. MELINGER e ALVIN R. KNUDSON. "SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS". International Journal of High Speed Electronics and Systems 14, n.º 02 (junho de 2004): 311–25. http://dx.doi.org/10.1142/s0129156404002375.
Texto completo da fonteJi, Chunnuan, Rongjun Qu, Qinghua Tang, Xiguang Liu, Hou Chen, Changmei Sun e Peng Yin. "Removal of trace As(V) from aqueous solution by Fe(III)-loaded porous amidoximated polyacrylonitrile". Water Supply 16, n.º 6 (18 de maio de 2016): 1603–13. http://dx.doi.org/10.2166/ws.2016.085.
Texto completo da fonteXi, Jianhong, e Mengchang He. "Removal of Sb(III) and Sb(V) from aqueous media by goethite". Water Quality Research Journal 48, n.º 3 (1 de agosto de 2013): 223–31. http://dx.doi.org/10.2166/wqrjc.2013.030.
Texto completo da fonteNayak, Bishwajit, Md Amir Hossain, Mrinal Kumar Sengupta, Saad Ahamed, Bhaskar Das, Arup Pal e Amitava Mukherjee. "Adsorption Studies with Arsenic onto Ferric Hydroxide Gel in a Non-oxidizing Environment: the Effect of Co-occurring Solutes and Speciation". Water Quality Research Journal 41, n.º 3 (1 de agosto de 2006): 333–40. http://dx.doi.org/10.2166/wqrj.2006.037.
Texto completo da fonteWEAVER, B. D., DALE McMORROW e L. M. COHN. "RADIATION EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS". International Journal of High Speed Electronics and Systems 13, n.º 01 (março de 2003): 293–326. http://dx.doi.org/10.1142/s0129156403001624.
Texto completo da fonteBarnett, Joel, Richard Hill e Prashant Majhi. "Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique". Solid State Phenomena 187 (abril de 2012): 33–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.33.
Texto completo da fonteSingh, Jay, C. L. Maurya, Rishabh Gupta, Sunil Kumar, Shivam Chaturvedi, Ajay Pratap Singh e Dhruvendra Singh Sachan. "Genetic Divergence Analysis of Wheat (Triticum aestivum L.) Genotypes". Journal of Experimental Agriculture International 46, n.º 5 (21 de março de 2024): 287–92. http://dx.doi.org/10.9734/jeai/2024/v46i52377.
Texto completo da fonteYan, Zhao, e Qiang Li. "Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon". Journal of Physics D: Applied Physics 57, n.º 21 (29 de fevereiro de 2024): 213001. http://dx.doi.org/10.1088/1361-6463/ad26cd.
Texto completo da fonteJi, Chunnuan, Suwen Sun, Shenghua Chi, Rongjun Qu, Changmei Sun e Peng Yin. "Arsenic adsorption using Fe(III)-loaded porous amidoximated acrylonitrile/itaconic copolymers". Water Supply 17, n.º 3 (11 de outubro de 2016): 698–706. http://dx.doi.org/10.2166/ws.2016.148.
Texto completo da fonteGao, Luyao, Mengna Hao, Fanling Bu, Chunnuan Ji, Rongjun Qu, Changmei Sun e Ying Zhang. "As(III) removal by Fe(III)-amidoximated PAN in the presence of H2O2 through simultaneous oxidation and adsorption". Water Supply 20, n.º 2 (30 de dezembro de 2019): 565–73. http://dx.doi.org/10.2166/ws.2019.201.
Texto completo da fonteLiu, G. J., X. R. Zhang, J. Jain, J. W. Talley e C. R. Neal. "Stability of inorganic arsenic species in simulated raw waters with the presence of NOM". Water Supply 6, n.º 6 (1 de dezembro de 2006): 175–82. http://dx.doi.org/10.2166/ws.2006.954.
Texto completo da fonteGhosh, Uday Chand, Durjoy Bandyopadhyay, Biswaranjan Manna e Manik Mandal. "Hydrous Iron(III)-Tin(IV) Binary Mixed Oxide: Arsenic Adsorption Behaviour from Aqueous Solution". Water Quality Research Journal 41, n.º 2 (1 de maio de 2006): 198–209. http://dx.doi.org/10.2166/wqrj.2006.023.
Texto completo da fonteHiraki, Tatsurou, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda e Shinji Matsuo. "III–V/Si integration technology for laser diodes and Mach–Zehnder modulators". Japanese Journal of Applied Physics 58, SB (27 de março de 2019): SB0803. http://dx.doi.org/10.7567/1347-4065/ab0741.
Texto completo da fonteLee, R. T. P., W. Y. Loh, R. Tieckelmann, T. Orzali, C. Huffman, A. Vert, G. Huang et al. "(Invited) Technology Options to Reduce Contact Resistance in Nanoscale III-V MOSFETs". ECS Transactions 66, n.º 4 (15 de maio de 2015): 125–34. http://dx.doi.org/10.1149/06604.0125ecst.
Texto completo da fonteDeshpande, V. V., V. Djara, D. Caimi, E. O'Connor, M. Sousa, L. Czornomaz e J. Fompeyrine. "(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology". ECS Transactions 69, n.º 10 (2 de outubro de 2015): 131–42. http://dx.doi.org/10.1149/06910.0131ecst.
Texto completo da fonteCheng, K. Y. "Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications". Proceedings of the IEEE 85, n.º 11 (1997): 1694–714. http://dx.doi.org/10.1109/5.649646.
Texto completo da fonteKwo, J. R., T. D. Lin, M. L. Huang, P. Chang, Y. J. Lee e M. Hong. "Advances on III-V MOSFET for Science and Technology beyond Si CMOS". ECS Transactions 19, n.º 2 (18 de dezembro de 2019): 593–603. http://dx.doi.org/10.1149/1.3122118.
Texto completo da fonteHarris, H. Michael. "III–V MESFET and HEMT research at the Georgia technology research institute". III-Vs Review 4, n.º 2 (abril de 1991): 28–30. http://dx.doi.org/10.1016/0961-1290(91)90190-8.
Texto completo da fonteKúdela, R., J. Šoltýs, M. Kučera, R. Stoklas, F. Gucmann, M. Blaho, M. Mičušík et al. "Technology and application of in-situ AlOx layers on III-V semiconductors". Applied Surface Science 461 (dezembro de 2018): 33–38. http://dx.doi.org/10.1016/j.apsusc.2018.06.229.
Texto completo da fonteLee, Subin, Seong Kwang Kim, Jae-Hoon Han, Jin Dong Song, Dong-Hwan Jun e Sang-Hyeon Kim. "Epitaxial Lift-Off Technology for Large Size III–V-on-Insulator Substrate". IEEE Electron Device Letters 40, n.º 11 (novembro de 2019): 1732–35. http://dx.doi.org/10.1109/led.2019.2944155.
Texto completo da fonteL�th, H. "Research on III-V Semiconductor Interfaces: Its Impact on Technology and Devices". physica status solidi (a) 187, n.º 1 (setembro de 2001): 33–44. http://dx.doi.org/10.1002/1521-396x(200109)187:1<33::aid-pssa33>3.0.co;2-9.
Texto completo da fonteSri sukmawati, Ni made, I. made Citra wibawa e Putu Aditya antara. "Pengaruh Model Pembelajaran Science Environment Technology Society Terhadap Hasil Belajar Ilmu Pengetahuan Alam". Jurnal Ilmiah Sekolah Dasar 2, n.º 3 (28 de novembro de 2018): 329. http://dx.doi.org/10.23887/jisd.v2i3.16149.
Texto completo da fonteSingh, Tony Sarvinder, e Kamal K. Pant. "Kinetics and Mass Transfer Studies on the Adsorption of Arsenic onto Activated Alumina and Iron Oxide Impregnated Activated Alumina". Water Quality Research Journal 41, n.º 2 (1 de maio de 2006): 147–56. http://dx.doi.org/10.2166/wqrj.2006.017.
Texto completo da fonteChang, Y. Y., K. S. Kim, J. H. Jung, J. K. Yang e S. M. Lee. "Application of iron-coated sand and manganese-coated sand on the treatment of both As(III) and As(V)". Water Science and Technology 55, n.º 1-2 (1 de janeiro de 2007): 69–75. http://dx.doi.org/10.2166/wst.2007.029.
Texto completo da fonteYamaguchi, Masafumi, Frank Dimroth, Nicholas J. Ekins-Daukes, Nobuaki Kojima e Yoshio Ohshita. "Overview and loss analysis of III–V single-junction and multi-junction solar cells". EPJ Photovoltaics 13 (2022): 22. http://dx.doi.org/10.1051/epjpv/2022020.
Texto completo da fonteHorng, Ray-Hua, Ming-Chun Tseng e Shui-Yang Lien. "Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate". International Journal of Photoenergy 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/108696.
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