Livros sobre o tema "III-V technology"
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Ayşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Encontre o texto completo da fonteErol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Encontre o texto completo da fonteAyşe, Erol, ed. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Encontre o texto completo da fonteLi, Tingkai, Michael A. Mastro e Armin Dadgar. III-V compound semiconductors: Integration with silicon-based microelectronics. Boca Raton: Taylor & Francis, 2010.
Encontre o texto completo da fonteConference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. Bristol, England: A. Hilger, 1988.
Encontre o texto completo da fonteEkaterinburg, Russia) Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar "Intellektualʹnye informat︠s︡ionnye tekhnologii v. upravlencheskoĭ dei︠a︡telʹnosti" (3rd 2001. Intellektualʹnye informat︠s︡ionnye tekhnologii v upravlencheskoĭ dei︠a︡telʹnosti: III Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar, 23-24 i︠a︡nvari︠a︡ 2001 g. : materialy. Ekaterinburg: Uralʹskiĭ gos. tekhn. universitet, 2001.
Encontre o texto completo da fonteMezhdunarodnai︠a︡, nauchnai︠a︡ konferent︠s︡ii︠a︡ "Chelovek kulʹtura i. obshchestvo v. kontekste globalizat︠s︡ii sovremennogo mira" (3rd 2004 Moscow Russia). Chelovek, kulʹtura i obshchestvo v kontekste globalizat︠s︡ii sovremennogo mira: Ėlektronnai︠a︡ kulʹtura i novye gumanitarnye tekhnologii XXI veka : materialy III Mezhdunarodnoĭ nauchnoĭ konferent︠s︡ii. Moskva: Izd-vo "Nezavisimyĭ in-t grazhdanskogo ob-va", 2004.
Encontre o texto completo da fonteSoldatkina, I͡A V., e Elena I͡Urʹevna Lazareva. Mediĭnye prot︠s︡essy v sovremennom gumanitarnom prostranstve: Podkhody k izuchenii︠u︡, ėvoli︠u︡t︠s︡ii︠a︡, perspektivy : materialy III nauchno-prakticheskoĭ konferent︠s︡ii. Moskva: MPGU, 2017.
Encontre o texto completo da fonteBelarus) Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ "Informat︠s︡ionnye sistemy i tekhnologii" (3nd 2006 Minsk. Informat︠s︡ionnye sistemy i tekhnologii (IST'2006): Tretʹi︠a︡ Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ (Minsk, 1--3 noi︠a︡bri︠a︡ 2006 g.) : materialy : v 2 chasti︠a︡kh = Information systems and technologies (IST'2006) : proceedings of the III International conference (Minsk, November 1--3, 2006) In two parts. Minsk: Akademii︠a︡ upravlenii︠a︡ pri Prezidente Respubliki Belarusʹ, 2006.
Encontre o texto completo da fonteUnited States. National Aeronautics and Space Administration., ed. Growth and characterization of binary and pseudo-binary III-V compounds exhibiting non-linear optical behavior and undergraduate research opportunities in microgravity science and technology. [Washington, DC: National Aeronautics and Space Administration, 1992.
Encontre o texto completo da fonteConference on Physics and Technology of GaAs and other III-V Semiconductors (2nd 1986 Budapest, Hungary). Gallium arsenide: Proceedings of the Second Conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986. Editado por Lendvay E e Magyar Tudományos Akadémia. [Aedermannsdorf], Switzerland: Trans Tech Publications, 1987.
Encontre o texto completo da fonteProst, Werner. Technologie der III/V-Halbleiter. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60786-8.
Texto completo da fonteTiku, Shiban, e Dhrubes Biswas. III-V Integrated Circuit Fabrication Technology. Jenny Stanford Publishing, 2016.
Encontre o texto completo da fonteTiku, Shiban, e Dhrubes Biswas. III-V Integrated Circuit Fabrication Technology. Taylor & Francis Group, 2016.
Encontre o texto completo da fonteTiku, Shiban, e Dhrubes Biswas. III-V Integrated Circuit Fabrication Technology. Jenny Stanford Publishing, 2016.
Encontre o texto completo da fonteLi, Tingkai, Armin Dadgar e Michael Mastro. III V Compound Semiconductors. Taylor & Francis Group, 2011.
Encontre o texto completo da fonteTomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2021.
Encontre o texto completo da fonteTomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Multinary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteProperties of Group-IV, III-V and II-VI Semiconductors. New York: John Wiley & Sons, Ltd., 2005.
Encontre o texto completo da fonteErol, Ayse. Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology. Springer, 2010.
Encontre o texto completo da fonteNirmal, D., e J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2020.
Encontre o texto completo da fonteNirmal, D., e J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.
Encontre o texto completo da fonteNirmal, D., e J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.
Encontre o texto completo da fonteNirmal, D., e J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.
Encontre o texto completo da fonteLi, Tingkai, Armin Dadgar e Michael Mastro. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics. Taylor & Francis Group, 2016.
Encontre o texto completo da fonteLi, Tingkai, Armin Dadgar e Michael Mastro. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics. Taylor & Francis Group, 2016.
Encontre o texto completo da fonteTomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2020.
Encontre o texto completo da fonteTomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteTomashyk, Vasyl. Quaternary Alloys Based on III-V Semiconductors. Taylor & Francis Group, 2018.
Encontre o texto completo da fonteMadelung, Otfried. Semiconductors: Group IV Elements and Iii-V Compounds (Data in Science and Technology). Springer-Verlag, 1991.
Encontre o texto completo da fonteGrossman. Semi-insulating III-V Materials, Malmo 1988, Proceedings of the 5th Conference on Semi-insulating III-V Materials, Malmo, Sweden, 1-3 June 1988. Taylor & Francis, 1988.
Encontre o texto completo da fonteMadelung, Otfried. Semiconductors: Others Than Group IV Elements and Iii-V Compounds (Data in Science and Technology). Springer, 1992.
Encontre o texto completo da fonteHeime, Klaus. Indium Gallium Arsenide Field-effect Transistors (Electronic & Electrical Engineering Research Studies - III-V Compound Technology Series). Research Studies Press, 1989.
Encontre o texto completo da fonteRössler, U., e W. von der Osten. Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds / Intrinsische Eigenschaften von Elementen der IV. Gruppe und von III-V-, ... Relationships in Science & Technology). Springer, 1986.
Encontre o texto completo da fontePearton, S. J., C. R. Abernathy e F. Ren. Topics in Growth and Device Processing of Iii-V Semiconductors (International Series on Advances in Solid State Electronics and Technology). World Scientific Publishing Company, 1996.
Encontre o texto completo da fonte(Contributor), T. Dalibor, R. P. Devaty (Contributor), P. Giannozzi (Contributor), W. Kulisch (Contributor), B. Meyer (Contributor), R. Murray (Contributor), R. C. Newman (Contributor), L. Pavesi (Contributor), G. Pensl (Contributor) e A. Willoughby (Contributor), eds. Impurities and Defects in Group IV-IV and III-V Compounds: Supplement to Vol. III/22b (Print Version), Revised and Updated Edition of Vol. III/22b (CD-ROM) ... in Science and Technology - New Series, B). Springer, 2003.
Encontre o texto completo da fonteGrowth and characterization of binary and pseudo-binary III-V compounds exhibiting non-linear optical behavior and undergraduate research opportunities in microgravity science and technology. [Washington, DC: National Aeronautics and Space Administration, 1992.
Encontre o texto completo da fonteHepp, A. F. Covalent Ceramics III: Science and Technology of Non-Oxides : Symposium Held November 27-29, 1995, Boston, Massachusetts, U.S.A (Materials Research Society Symposia Proceedings, V. 410.). Materials Research Society, 1996.
Encontre o texto completo da fonteConference on Physics and Technology of GaAs and other III-V Semiconductors (2nd 1986 Budapest, Hungary). Gallium arsenide: Proceedings of the second conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986. Editado por Lendvay E e Magyar Tudoma nyos Akade mia. Switzerland ; Distributed in North America by Trans Tech Publications, Brookfield, VT, 1987.
Encontre o texto completo da fonteBrownsword, Roger, Eloise Scotford e Karen Yeung, eds. The Oxford Handbook of Law, Regulation and Technology. Oxford University Press, 2016. http://dx.doi.org/10.1093/oxfordhb/9780199680832.001.0001.
Texto completo da fonteTechnologie der III/V-Halbleiter: III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997.
Encontre o texto completo da fonteProst, Werner. Technologie der III/V-Halbleiter. III/V-Heterostrukturen und elektronische Höchstfrequenz-Bauelemente. Springer Verlag, 1997.
Encontre o texto completo da fonteSolymar, L., D. Walsh e R. R. A. Syms. Semiconductors. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0008.
Texto completo da fonte