Literatura científica selecionada sobre o tema "III-As nanowires"
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Artigos de revistas sobre o assunto "III-As nanowires"
Mastro, Michael A., Neeraj Nepal, Fritz Kub, Jennifer K. Hite, Jihyun Kim e Charles R. Eddy. "Nickel Foam as a Substrate for III-nitride Nanowire Growth". MRS Proceedings 1538 (2013): 311–16. http://dx.doi.org/10.1557/opl.2013.504.
Texto completo da fonteLeshchenko E. D. e Dubrovskii V. G. "Modeling the growth of tapered nanowires on reflecting substrates". Technical Physics Letters 48, n.º 12 (2022): 11. http://dx.doi.org/10.21883/tpl.2022.12.54937.19358.
Texto completo da fonteDubrovskii, Vladimir G., e Egor D. Leshchenko. "Modeling the Radial Growth of Self-Catalyzed III-V Nanowires". Nanomaterials 12, n.º 10 (16 de maio de 2022): 1698. http://dx.doi.org/10.3390/nano12101698.
Texto completo da fonteGAO, Q., H. J. JOYCE, S. PAIMAN, J. H. KANG, H. H. TAN, Y. KIM, L. M. SMITH et al. "III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS". International Journal of High Speed Electronics and Systems 20, n.º 01 (março de 2011): 131–41. http://dx.doi.org/10.1142/s0129156411006465.
Texto completo da fonteЛещенко, Е. Д., e В. Г. Дубровский. "Моделирование роста заостренных нитевидных нанокристаллов на маскированных подложках". Письма в журнал технической физики 48, n.º 23 (2022): 14. http://dx.doi.org/10.21883/pjtf.2022.23.53945.19358.
Texto completo da fonteYip, Sen Po, Wei Wang e Johnny C. Ho. "(Invited, Digital Presentation) Ternary III-Sb Nanowires: Synthesis and Their Electronic and Optoelectronics Applications". ECS Meeting Abstracts MA2022-02, n.º 36 (9 de outubro de 2022): 1306. http://dx.doi.org/10.1149/ma2022-02361306mtgabs.
Texto completo da fonteSaleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed e Muhammad Asghar. "Phase Control Growth of InAs Nanowires by Using Bi Surfactant". Coatings 12, n.º 2 (15 de fevereiro de 2022): 250. http://dx.doi.org/10.3390/coatings12020250.
Texto completo da fonteKang, Sung Bum, Rahul Sharma, Minhyeok Jo, Su In Kim, Jeongwoo Hwang, Sang Hyuk Won, Jae Cheol Shin e Kyoung Jin Choi. "Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer". Energies 15, n.º 5 (28 de fevereiro de 2022): 1772. http://dx.doi.org/10.3390/en15051772.
Texto completo da fonteДубровский, В. Г., А. С. Соколовский e И. В. Штром. "Свободная энергия образования зародыша при росте III-V нитевидного нанокристалла". Письма в журнал технической физики 46, n.º 18 (2020): 3. http://dx.doi.org/10.21883/pjtf.2020.18.49991.18401.
Texto completo da fonteDemontis, Valeria, Valentina Zannier, Lucia Sorba e Francesco Rossella. "Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays". Nanomaterials 11, n.º 8 (16 de agosto de 2021): 2079. http://dx.doi.org/10.3390/nano11082079.
Texto completo da fonteTeses / dissertações sobre o assunto "III-As nanowires"
Hölzel, Sara Sibylle [Verfasser]. "Group III-Nitride Nanowires as Multifunctional Optical Biosensors / Sara Sibylle Hölzel". Gießen : Universitätsbibliothek, 2018. http://d-nb.info/1173615059/34.
Texto completo da fonteHölzel, Sara [Verfasser]. "Group III-Nitride Nanowires as Multifunctional Optical Biosensors / Sara Sibylle Hölzel". Gießen : Universitätsbibliothek, 2018. http://d-nb.info/1173615059/34.
Texto completo da fonteChereau, Emmanuel. "Synthèse et modélisation de nanofils III-As par SAG-HVPE : vers des dispositifs pour l'infrarouge et la conversion d'énergie". Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2024. http://www.theses.fr/2024UCFA0020.
Texto completo da fonteThis work focuses on the selective area growth (SAG) of III-As nanowires (NWs) by hydride vapor-phase epitaxy (HVPE). First, we have studied the SAG of GaAs NWs on GaAs substrates. Systematic studies according to growth conditions have demonstrated a growth suppression effect under arsenic-rich atmosphere. These observations were supported by a kinetic model which, for the first time in HVPE, takes into account the diffusion of Ga adatoms on the NWs side facets. Then, a preliminary study of the doping of NWs was carried out, as well as the growth of p-i-n junctions in NWs. The results are encouraging regarding the fabrication of NW-based devices by HVPE. Secondly, we have studied the SAG of InAs and InGaAs on GaAs and Si substrates. It turned out that growth suppression also occurs for InAs NWs. As for InGaAs, NW arrays with various compositions have been successfully obtained. A growth model was developed revealing that the NWs composition is controlled by growth kinetics rather than thermodynamic factors. This greatly simplifies the control of the composition across a wide range of HVPE parameters. These results show the capability of HVPE for the fabrication of homogeneous InGaAs NW arrays with widely tunable compositions
Burgess, Timothy. "From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy". Phd thesis, 2017. http://hdl.handle.net/1885/144611.
Texto completo da fonteCapítulos de livros sobre o assunto "III-As nanowires"
Shilla, Pooja, Raj Kumar e Arvind Kumar. "III-V-Based Gate-All-Around Cylindrical Nanowire Junctionless Field Effect Transistor". In Advances in Computer and Electrical Engineering, 101–21. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch005.
Texto completo da fonteRoutray, Soumyaranjan, e Trupti Lenka. "III-Nitride Nanowires: Future Prospective for Photovoltaic Applications". In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.95011.
Texto completo da fonteTakele Geldasa, Fikadu. "Solar Energy Conversion Efficiency, Growth Mechanism and Design of III–V Nanowire-Based Solar Cells: Review". In Advances in Nanowires Synthesis and Applications to Sensing Technologies [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.105985.
Texto completo da fonteNguyen, Hoang-Duy, Mano Bala Sankar Muthu e Hieu Pham Trung Nguyen. "Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes". In Nanoelectronic Devices and Applications, 72–89. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815238242124010005.
Texto completo da fonteKumar, Raj, Shashi Bala e Arvind Kumar. "Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors". In Advances in Computer and Electrical Engineering, 54–70. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch003.
Texto completo da fonteBala, Shashi, Raj Kumar, Jeetendra Singh e Sanjeev Kumar Sharma. "Design and Simulation Analysis of NWFET for Digital Application". In Advances in Computer and Electrical Engineering, 123–38. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch006.
Texto completo da fonteTrabalhos de conferências sobre o assunto "III-As nanowires"
Saerens, G., I. Tang, E. Bloch, K. Frizyuk, M. Reig Escalé, C. Renaut, F. Timpu et al. "Semiconductor III-V Nanowires as Building Blocks for Flexible Nonlinear Photonic Components". In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_qels.2020.ftu3q.3.
Texto completo da fonteLiu, Wenjun, Yizhang Yang e Mehdi Asheghi. "Thermal Characterization of Silicon Nanowires". In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87063.
Texto completo da fonteFlorini, Nikoletta. "Core-shell nanowires based on III-V alloys: Strain distribution as a function of structure and composition". In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1230.
Texto completo da fonteLyeo, Ho-Ki, C. K. Ken Shih, Uttam Ghoshal e Li Shi. "Thermoelectric Mapping of Nanostructures". In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32766.
Texto completo da fonteKleindienst, R., V. Cimalla, M. Eickhoff, A. Grewe, K. Holc, J. Schätzle, U. Schwarz, J. Teubert e S. Sinzinger. "Micro-optical system as integration platform for III-N nanowire based opto-chemical detectors". In SPIE MOEMS-MEMS, editado por Georg von Freymann, Winston V. Schoenfeld e Raymond C. Rumpf. SPIE, 2013. http://dx.doi.org/10.1117/12.2002411.
Texto completo da fonteGeelhaar, L. "(Invited) Nanowire Growth as a Means for the Monolithic Integration of III-V Compound Semiconductors on Si". In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.d-6-1.
Texto completo da fonteStellari, Franco, Alan J. Weger, Seongwon Kim, Dzmitry Maliuk, Peilin Song, Herschel A. Ainspan, Young Kwark et al. "A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits". In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0182.
Texto completo da fonteRomero, David A., Elham Pakseresht, Daniel Sellan, Aydin Nabovati e Cristina Amon. "A Hierarchical Framework for Thermal Modelling of Electronic Devices: From Atoms to Chips". In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73202.
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