Artigos de revistas sobre o tema "High temperature semiconductors"
Crie uma referência precisa em APA, MLA, Chicago, Harvard, e outros estilos
Veja os 50 melhores artigos de revistas para estudos sobre o assunto "High temperature semiconductors".
Ao lado de cada fonte na lista de referências, há um botão "Adicionar à bibliografia". Clique e geraremos automaticamente a citação bibliográfica do trabalho escolhido no estilo de citação de que você precisa: APA, MLA, Harvard, Chicago, Vancouver, etc.
Você também pode baixar o texto completo da publicação científica em formato .pdf e ler o resumo do trabalho online se estiver presente nos metadados.
Veja os artigos de revistas das mais diversas áreas científicas e compile uma bibliografia correta.
TREW, R. J., e M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n.º 01 (março de 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Texto completo da fontePalmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics". MRS Bulletin 28, n.º 10 (outubro de 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
Texto completo da fonteMa, Xi Ying. "Study of the Electrical Properties of Monolayer MoS2 Semiconductor". Advanced Materials Research 651 (janeiro de 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.
Texto completo da fonteWESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, n.º 04 (dezembro de 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Texto completo da fonteDezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe e Yutaka Oyama. "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors". Key Engineering Materials 500 (janeiro de 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
Texto completo da fonteGuyenot, M., M. Reinold, Y. Maniar e M. Rittner. "Advanced wire bonding for high reliability and high temperature applications". International Symposium on Microelectronics 2016, n.º 1 (1 de outubro de 2016): 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.
Texto completo da fonteZhao, Youyang, Charles Rinzler e Antoine Allanore. "Molten Semiconductors for High Temperature Thermoelectricity". ECS Journal of Solid State Science and Technology 6, n.º 3 (5 de dezembro de 2016): N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.
Texto completo da fonteChen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors". Highlights in Science, Engineering and Technology 81 (26 de janeiro de 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Texto completo da fonteKappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner e Rainer Kokozinski. "High Temperature GaN Gate Driver in SOI CMOS Technology". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1 de janeiro de 2016): 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.
Texto completo da fonteTournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel e Dominique Planson. "Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications". Advanced Materials Research 324 (agosto de 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.
Texto completo da fonteGumyusenge, Aristide, e Jianguo Mei. "High Temperature Organic Electronics". MRS Advances 5, n.º 10 (2020): 505–13. http://dx.doi.org/10.1557/adv.2020.31.
Texto completo da fontePrikhod’ko, A. V. "High-Temperature Superconductivity in Chalcogenide Vitreous Semiconductors". Semiconductors 35, n.º 6 (junho de 2001): 677. http://dx.doi.org/10.1134/1.1379402.
Texto completo da fonteNagaev, E. L. "High-temperature resistivity of degenerate ferromagnetic semiconductors". Physics Letters A 255, n.º 4-6 (maio de 1999): 336–42. http://dx.doi.org/10.1016/s0375-9601(99)00188-7.
Texto completo da fonteRuddy, Frank H., Laurent Ottaviani, Abdallah Lyoussi, Christophe Destouches, Olivier Palais e Christelle Reynard-Carette. "Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments". EPJ Web of Conferences 253 (2021): 11003. http://dx.doi.org/10.1051/epjconf/202125311003.
Texto completo da fonteWang, Haidi, Qingqing Feng, Xingxing Li e Jinlong Yang. "High-Throughput Computational Screening for Bipolar Magnetic Semiconductors". Research 2022 (15 de março de 2022): 1–8. http://dx.doi.org/10.34133/2022/9857631.
Texto completo da fonteZaizen, Shohei, Kyohei Asami, Takashi Furukawa, Takeshi Hatta, Tsubasa Nakamura, Takashi Sakugawa e Takahisa Ueno. "The Development of a Compact Pulsed Power Supply with Semiconductor Series Connection". Electronics 12, n.º 21 (4 de novembro de 2023): 4541. http://dx.doi.org/10.3390/electronics12214541.
Texto completo da fonteHan, Da-Gyeong, Dong-Hwan Lee e Jeong-Won Yoon. "Optimization of TLPS Bonding Process and Joint Property using Ni-Sn Paste for High Temperature Power Module Applications". Journal of Welding and Joining 42, n.º 2 (30 de abril de 2024): 165–73. http://dx.doi.org/10.5781/jwj.2024.42.2.3.
Texto completo da fonteHuang, Chengxi, Junsheng Feng, Jian Zhou, Hongjun Xiang, Kaiming Deng e Erjun Kan. "Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors". Journal of the American Chemical Society 141, n.º 31 (16 de julho de 2019): 12413–18. http://dx.doi.org/10.1021/jacs.9b06452.
Texto completo da fonteBonanni, Alberta, e Tomasz Dietl. "A story of high-temperature ferromagnetism in semiconductors". Chem. Soc. Rev. 39, n.º 2 (2010): 528–39. http://dx.doi.org/10.1039/b905352m.
Texto completo da fonteChaves, Andrey, e David Neilson. "Two-dimensional semiconductors host high-temperature exotic state". Nature 574, n.º 7776 (2 de outubro de 2019): 39–40. http://dx.doi.org/10.1038/d41586-019-02906-9.
Texto completo da fonteGraham, Mike J. "Modern Analytical Techniques in High Temperature Oxidation and Corrosion". Materials Science Forum 522-523 (agosto de 2006): 61–68. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.61.
Texto completo da fonteLu, Zhizhong, Menglin Jiang, Jieshi Huang, Xinlei Zhou, Kejie Li, Yue Zheng, Wenkai Jiang, Tao Zhang, Hangbing Yan e Huan Xia. "Study on NO2 gas sensitivity of metal phthalocyanine enhanced by graphene quantum dots". Journal of Physics: Conference Series 2369, n.º 1 (1 de novembro de 2022): 012083. http://dx.doi.org/10.1088/1742-6596/2369/1/012083.
Texto completo da fonteGumyusenge, Aristide, Dung T. Tran, Xuyi Luo, Gregory M. Pitch, Yan Zhao, Kaelon A. Jenkins, Tim J. Dunn, Alexander L. Ayzner, Brett M. Savoie e Jianguo Mei. "Semiconducting polymer blends that exhibit stable charge transport at high temperatures". Science 362, n.º 6419 (6 de dezembro de 2018): 1131–34. http://dx.doi.org/10.1126/science.aau0759.
Texto completo da fonteKim, Jong-Woo, Seong-Geon Park, Min Kyu Yang e Byeong-Kwon Ju. "Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors". Electronics 11, n.º 19 (28 de setembro de 2022): 3094. http://dx.doi.org/10.3390/electronics11193094.
Texto completo da fonteGulyamov, G., U. I. Erkaboev e N. Yu. Sharibaev. "The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors". Modern Physics Letters B 30, n.º 07 (20 de março de 2016): 1650077. http://dx.doi.org/10.1142/s0217984916500779.
Texto completo da fonteLostetter, Alexander B., J. Hornberger, B. McPherson, J. Bourne, R. Shaw, E. Cilio, W. Cilio et al. "High Temperature Silicon Carbide Power Modules for High Performance Systems". Materials Science Forum 717-720 (maio de 2012): 1219–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1219.
Texto completo da fonteHarada, T., S. Ito e A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation". Science Advances 5, n.º 10 (outubro de 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.
Texto completo da fontePavlidis, Georges, Muhammad Jamil e Bivek Bista. "(Invited) Sub-Bandgap Thermoreflectance Imaging of Ultra-Wide Bandgap Semiconductors". ECS Meeting Abstracts MA2023-01, n.º 32 (28 de agosto de 2023): 1822. http://dx.doi.org/10.1149/ma2023-01321822mtgabs.
Texto completo da fonteWang, Baron, Andrea S. Chen e Randy H. Y. Lo. "Characteristics of Organic-Based Thermal Interface Materials Suitable for High Temperature Operation". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, HiTen (1 de julho de 2019): 000041–44. http://dx.doi.org/10.4071/2380-4491.2019.hiten.000041.
Texto completo da fonteArkin, Michael, Jeff Watson, Michael Siu e Michael Cusack. "Precision Analog Signal Conditioning Semiconductors for Operation in Very High Temperature Environments". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (1 de janeiro de 2013): 000139–51. http://dx.doi.org/10.4071/hiten-ta17.
Texto completo da fonteFurnival, Benjamin J. D., Sandip K. Roy, Nicolas G. Wright e Alton B. Horsfall. "Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics". Materials Science Forum 740-742 (janeiro de 2013): 837–40. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.837.
Texto completo da fonteQi, Siyuan, Chris Powley, Maria Mirgkizoudi, Adele Pliscott e Peter Collier. "Evaluation of High Temperature Joining Technologies for Semiconductor Die Attach". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (1 de julho de 2017): 000177–92. http://dx.doi.org/10.4071/2380-4491.2017.hiten.177.
Texto completo da fonteHuang, Luying, Fenghua Liu, Jiachen Bao, Xiaoman Li e Weiping Wu. "High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing". Materials 17, n.º 6 (19 de março de 2024): 1395. http://dx.doi.org/10.3390/ma17061395.
Texto completo da fonteChen, Yu, S. W. Fan e P. Xu. "Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives". Applied Physics Letters 121, n.º 25 (19 de dezembro de 2022): 252102. http://dx.doi.org/10.1063/5.0125543.
Texto completo da fonteNeudeck, P. G., R. S. Okojie e Liang-Yu Chen. "High-temperature electronics - a role for wide bandgap semiconductors?" Proceedings of the IEEE 90, n.º 6 (junho de 2002): 1065–76. http://dx.doi.org/10.1109/jproc.2002.1021571.
Texto completo da fonteKuroda, Shinji, Nozomi Nishizawa, Kôki Takita, Masanori Mitome, Yoshio Bando, Krzysztof Osuch e Tomasz Dietl. "Origin and control of high-temperature ferromagnetism in semiconductors". Nature Materials 6, n.º 6 (21 de maio de 2007): 440–46. http://dx.doi.org/10.1038/nmat1910.
Texto completo da fonteArciszewska, M., A. Mycielski, C. Testelin, C. Rigaux e A. Mauger. "High-temperature magnetic susceptibility ofCd1−xFexTe diluted magnetic semiconductors". Physical Review B 45, n.º 15 (15 de abril de 1992): 8746–48. http://dx.doi.org/10.1103/physrevb.45.8746.
Texto completo da fonteZhang, Wenxu, Zhishuo Huang, Wanli Zhang e Yanrong Li. "Two-dimensional semiconductors with possible high room temperature mobility". Nano Research 7, n.º 12 (3 de setembro de 2014): 1731–37. http://dx.doi.org/10.1007/s12274-014-0532-x.
Texto completo da fonteWang, Yaqi, Huasheng Sun, Shihai Wu, Ang Li, Yi Wan, Erjun Kan e Chengxi Huang. "Prediction of high-temperature ferromagnetic semiconductors in tetrahedral superlattices". Science China Materials 67, n.º 4 (20 de março de 2024): 1225–30. http://dx.doi.org/10.1007/s40843-023-2863-2.
Texto completo da fonteZhan, Tianzhuo, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu et al. "Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review". Micromachines 14, n.º 11 (8 de novembro de 2023): 2076. http://dx.doi.org/10.3390/mi14112076.
Texto completo da fonteShur, Michael. "(Invited) Ultrawide Bandgap Transistors for High Temperature and Radiation Hard Applications". ECS Meeting Abstracts MA2022-02, n.º 37 (9 de outubro de 2022): 1348. http://dx.doi.org/10.1149/ma2022-02371348mtgabs.
Texto completo da fonteKizilyalli, Isik C., Olga Blum Spahn e Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future". ECS Meeting Abstracts MA2022-02, n.º 37 (9 de outubro de 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Texto completo da fonteWang, M., R. A. Marshall, K. W. Edmonds, A. W. Rushforth, R. P. Campion e B. L. Gallagher. "Determining Curie temperatures in dilute ferromagnetic semiconductors: High Curie temperature (Ga,Mn)As". Applied Physics Letters 104, n.º 13 (31 de março de 2014): 132406. http://dx.doi.org/10.1063/1.4870521.
Texto completo da fonteMonobe, Hirosato, Masaomi Kimoto e Yo Shimizu. "Influence of Temperature Variation on Field Effect Transistor Properties Using a Solution-Processed Liquid Crystalline Semiconductor, 8TNAT8". Journal of Nanoscience and Nanotechnology 16, n.º 4 (1 de abril de 2016): 3277–81. http://dx.doi.org/10.1166/jnn.2016.12299.
Texto completo da fonteHöhne, Jens, Matthias Bühler, Theo Hertrich e Uwe Hess. "Cryodetectors for High Resolution X-Ray Spectroscopy". Microscopy and Microanalysis 6, S2 (agosto de 2000): 740–41. http://dx.doi.org/10.1017/s1431927600036199.
Texto completo da fonteKucukgok, B., Q. He, A. Carlson, A. G. Melton, I. T. Ferguson e N. Lu. "Investigation of Wide Bandgap Semiconductors for Thermoelectric Applications". MRS Proceedings 1490 (2013): 161–66. http://dx.doi.org/10.1557/opl.2013.26.
Texto completo da fonteOstapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov e Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures". Inventions 7, n.º 4 (18 de outubro de 2022): 96. http://dx.doi.org/10.3390/inventions7040096.
Texto completo da fonteRaju, Krishna Murti. "High temperature elastic anharmonicity in lanthanum mono-chalcogenides". Canadian Journal of Physics 89, n.º 7 (julho de 2011): 817–24. http://dx.doi.org/10.1139/p11-062.
Texto completo da fonteEndo, Hirohisa, Kozaburo Tamura e Makoto Yao. "Liquid metals and semiconductors under pressure". Canadian Journal of Physics 65, n.º 3 (1 de março de 1987): 266–85. http://dx.doi.org/10.1139/p87-036.
Texto completo da fonteFan, Yan. "Recent progress in diluted ferromagnetism for spintronic application". Journal of Physics: Conference Series 2608, n.º 1 (1 de outubro de 2023): 012046. http://dx.doi.org/10.1088/1742-6596/2608/1/012046.
Texto completo da fonte