Literatura científica selecionada sobre o tema "High temperature semiconductors"
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Artigos de revistas sobre o assunto "High temperature semiconductors"
TREW, R. J., e M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n.º 01 (março de 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Texto completo da fontePalmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics". MRS Bulletin 28, n.º 10 (outubro de 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
Texto completo da fonteMa, Xi Ying. "Study of the Electrical Properties of Monolayer MoS2 Semiconductor". Advanced Materials Research 651 (janeiro de 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.
Texto completo da fonteWESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, n.º 04 (dezembro de 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Texto completo da fonteDezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe e Yutaka Oyama. "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors". Key Engineering Materials 500 (janeiro de 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
Texto completo da fonteGuyenot, M., M. Reinold, Y. Maniar e M. Rittner. "Advanced wire bonding for high reliability and high temperature applications". International Symposium on Microelectronics 2016, n.º 1 (1 de outubro de 2016): 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.
Texto completo da fonteZhao, Youyang, Charles Rinzler e Antoine Allanore. "Molten Semiconductors for High Temperature Thermoelectricity". ECS Journal of Solid State Science and Technology 6, n.º 3 (5 de dezembro de 2016): N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.
Texto completo da fonteChen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors". Highlights in Science, Engineering and Technology 81 (26 de janeiro de 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Texto completo da fonteKappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner e Rainer Kokozinski. "High Temperature GaN Gate Driver in SOI CMOS Technology". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1 de janeiro de 2016): 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.
Texto completo da fonteTournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel e Dominique Planson. "Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications". Advanced Materials Research 324 (agosto de 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.
Texto completo da fonteTeses / dissertações sobre o assunto "High temperature semiconductors"
Skelland, Neil David. "High temperature ion implantation into insulators". Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359076.
Texto completo da fonteVanpeteghem, Carine B. "High-pressure high-temperature structural studies of binary semiconductors". Thesis, University of Edinburgh, 2000. http://hdl.handle.net/1842/11496.
Texto completo da fonteBloom, Scott Harris. "Superconducting and normal compounds : some high field/high pressure effects /". Thesis, Connect to Dissertations & Theses @ Tufts University, 1989.
Encontre o texto completo da fonteSubmitted to the Dept. of Physics. Includes bibliographical references (leaves 192-204). Access restricted to members of the Tufts University community. Also available via the World Wide Web;
Nilsson, Joakim. "Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors". Licentiate thesis, Luleå tekniska universitet, EISLAB, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-18113.
Texto completo da fonteGodkänd; 2016; 20160304 (joanil); Nedanstående person kommer att hålla licentiatseminarium för avläggande av teknologie licentiatexamen. Namn: Joakim Nilsson Ämne: Industriell Elektronik/Industrial Electronics Uppsats: Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors Examinator: Docent Jonny Johansson, Institutionen för system- och rymdteknik, Avdelning: EISLAB, Luleå tekniska universitet. Diskutant: Docent Johan Sidén, Avdelningen för Elektronikkonstruktion, Mittuniversitetet, Sundsvall. Tid: Tisdag 3 maj, 2016 kl 8.30 Plats: A1547, Luleå tekniska universitet
Puchkov, Anton V. "The doping dependence of the optical properties of high-temperature superconductors /". *McMaster only, 1996.
Encontre o texto completo da fonteJansson, Rasmus. "Completion of the software required for a high-temperature DLTS setup". Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205076.
Texto completo da fonteDLTS investigation of wide bandgap materials
Diamond electronics
Barclay, Joshua David. "High Temperature Water as an Etch and Clean for SiO2 and Si3N4". Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404614/.
Texto completo da fonteKhan-Cheema, Umar Manzoor. "Vertical transport through an InAs/GaSb heterojunction at high pressures and magnetic fields". Thesis, University of Oxford, 1996. http://ora.ox.ac.uk/objects/uuid:fc7eef99-19d3-4d38-81c7-a84657282e8b.
Texto completo da fonteColmenares, Juan. "Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics". Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.
Texto completo da fonteQC 20160922
Haskel, Daniel. "Local structural studies of oriented high temperature superconducting cuprates by polarized XAFS spectroscopy /". Thesis, Connect to this title online; UW restricted, 1998. http://hdl.handle.net/1773/9712.
Texto completo da fonteLivros sobre o assunto "High temperature semiconductors"
M, Willander, e Hartnagel Hans 1934-, eds. High temperature electronics. London: Chapman & Hall, 1997.
Encontre o texto completo da fonteNational Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., ed. Materials for high-temperature semiconductor devices. Washington, D.C: National Academy Press, 1995.
Encontre o texto completo da fonteBakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA: Kluwer Academic Publishers, 2000.
Encontre o texto completo da fonteChristou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.
Encontre o texto completo da fonteBakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA: Springer US, 2000.
Encontre o texto completo da fonteuniversitet, Uppsala, ed. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala: Acta Universitatis Upsaliensis, 1997.
Encontre o texto completo da fonteCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Encontre o texto completo da fonteCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Encontre o texto completo da fonteL, Shindé Subhash, e Rudman David Albert, eds. Interfaces in high-Tc superconducting systems. New York: Springer-Verlag, 1994.
Encontre o texto completo da fonteLongya, Xu, Zhu Lu e United States. National Aeronautics and Space Administration., eds. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "High temperature semiconductors"
Hartnagel, H. L. "High temperature electronics based on compound semiconductors". In High Temperature Electronics, 161–72. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_6.
Texto completo da fonteEzaki, T., N. Mori, H. Momose, K. Taniguchi e C. Hamaguchi. "Electron Transport in Quantum Wires at High Temperature". In Hot Carriers in Semiconductors, 243–46. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_56.
Texto completo da fonteHultquist, Gunnar, C. Anghel e P. Szakàlos. "Effects of Hydrogen on the Corrosion Resistance of Metallic Materials and Semiconductors". In High-Temperature Oxidation and Corrosion 2005, 139–46. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-409-x.139.
Texto completo da fonteOhta, Hiromichi, S. Ohta e K. Koumoto. "High-Temperature Thermoelectric Performance of Strontium Titanate Degenerate Semiconductors". In Ceramic Transactions Series, 343–48. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144121.ch33.
Texto completo da fonteFukumura, Tomoteru, e Masashi Kawasaki. "Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds". In Functional Metal Oxides, 89–131. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.
Texto completo da fonteBak-Misiuk, J., A. Misiuk, J. Adamczewska, M. Calamiotou, A. Kozanecki, D. Kuristyn, K. Reginski, J. Kaniewski e A. Georgakilas. "Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on Gaas and Si Substrates". In Atomistic Aspects of Epitaxial Growth, 467–75. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_36.
Texto completo da fonteRötger, T., G. J. C. L. Bruls, J. C. Maan, P. Wyder, K. Ploog e G. Weimann. "Connection Between Low and High Temperature Magneto-transport Measurements in GaAs/GaAlAs Heterojunctions". In High Magnetic Fields in Semiconductor Physics II, 215–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_35.
Texto completo da fonteDammann, M., T. Stockmeier e H. Baltes. "Minority carrier lifetime measurements after high temperature pre-treatment". In Crucial Issues in Semiconductor Materials and Processing Technologies, 299–304. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_29.
Texto completo da fonteGimenez, Salvador Pinillos, e Egon Henrique Salerno Galembeck. "The Electrical Characteristics of the Semiconductor at High Temperatures". In Differentiated Layout Styles for MOSFETs, 27–39. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-29086-2_3.
Texto completo da fonteWillett, R. L., H. L. Stormer, D. C. Tsui, L. N. Pfeiffer e K. W. West. "Temperature Dependence of Transport Coefficients of 2D Electron Systems at Very Small Filling Factors". In High Magnetic Fields in Semiconductor Physics II, 153–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_25.
Texto completo da fonteTrabalhos de conferências sobre o assunto "High temperature semiconductors"
Ikossi-Anastasiou, Kiki, Andris Ezis, Keith Evans e Charles E. Stutz. "Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor". In Semiconductors '92, editado por John E. Bowers e Umesh K. Mishra. SPIE, 1992. http://dx.doi.org/10.1117/12.137715.
Texto completo da fonteKhokhlov, Dmitry. "Mixed Valence Puzzle in Doped IV-VI Semiconductors and its Applied Output: High-Performance Terahertz Photodetectors". In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355325.
Texto completo da fonteFriedrich, A. "Very High Temperature Operation of ∼ 5.75 μm Quantum Cascade Lasers". In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994716.
Texto completo da fonteKolodzey, James. "High Power, High Temperature Terahertz Emitters Based on Electronic Processes in Semiconductors". In International Conference on Fibre Optics and Photonics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/photonics.2014.m2b.2.
Texto completo da fonteBarker, John R. "Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices". In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994680.
Texto completo da fonteVoevodin, Valerii G., e Olga V. Voevodina. "Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors". In Material Science and Material Properties for Infrared Optoelectronics, editado por Fiodor F. Sizov e Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280457.
Texto completo da fonteTakahashi, Ryo. "Switching in low-temperature-grown InGaAs MQWs". In Nonlinear Guided Waves and Their Applications. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/nlgw.1998.nthb.1.
Texto completo da fonteGilbertson, Adam, C. J. Lambert, S. A. Solin e L. F. Cohen. "High resolution InSb quantum well ballistic nanosensors for room temperature applications". In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848310.
Texto completo da fonteLebey, Thierry, Ichiro Omura, Masahiro Kozako, Hiroki Kawano e Masayuki Hikita. "High temperature high voltage packaging of wideband gap semiconductors using gas insulating medium". In 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5543854.
Texto completo da fonteSapozhnikov, Sergey Z., Vladimir Yu Mityakov, Andrey V. Mityakov, Andrey A. Snarskii e Maxim I. Zhenirovskyy. "High-Temperature Heat Transfer Investigations Using Heterogeneous Gradient Sensors". In 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-22527.
Texto completo da fonteRelatórios de organizações sobre o assunto "High temperature semiconductors"
Siskaninetz, William J., Hank D. Jackson, James E. Ehret, Jeffrey C. Wiemeri e John P. Loehr. High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers. Fort Belvoir, VA: Defense Technical Information Center, novembro de 2000. http://dx.doi.org/10.21236/ada398284.
Texto completo da fonteNordheden, Karen J., e Linda J. Olafsen. High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures. Fort Belvoir, VA: Defense Technical Information Center, maio de 2009. http://dx.doi.org/10.21236/ada501427.
Texto completo da fontePark, Gil Han, e Jin-Joo Song. BMDO-AASERT: Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects. Fort Belvoir, VA: Defense Technical Information Center, dezembro de 2001. http://dx.doi.org/10.21236/ada397734.
Texto completo da fonteRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), junho de 2005. http://dx.doi.org/10.2172/884848.
Texto completo da fonteRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), junho de 2005. http://dx.doi.org/10.2172/884856.
Texto completo da fonteRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), junho de 2005. http://dx.doi.org/10.2172/884866.
Texto completo da fonteRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), junho de 2005. http://dx.doi.org/10.2172/885081.
Texto completo da fonteRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), junho de 2005. http://dx.doi.org/10.2172/885414.
Texto completo da fonte