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Artigos de revistas sobre o tema "Ge1–xSnx"

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Autor: Grafiati

Publicado: 25 de maio de 2024

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1

Jang, Han-Soo, Jong Hee Kim, Vallivedu Janardhanam, Hyun-Ho Jeong, Seong-Jong Kim e Chel-Jong Choi. "Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate". Crystals 14, n.º 2 (28 de janeiro de 2024): 134. http://dx.doi.org/10.3390/cryst14020134.

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The Ni-stanogermanides were formed via an interfacial reaction between Ni film and a Ge1−xSnx (x = 0.083) epilayer grown on a Si substrate driven by thermal treatment, and their microstructural and chemical features were investigated as a function of a rapid thermal annealing (RTA) temperature. The Ni3(Ge1−xSnx) phase was formed at the RTA temperature of 300 °C, above which Ni(Ge1−xSnx) was the only phase formed. The fairly uniform Ni(Ge1−xSnx) film was formed without unreactive Ni remaining after annealing at 400 °C. However, the Ni(Ge1−xSnx) film formed at 500 °C exhibited large surface and interface roughening, followed by the formation of Ni(Ge1−xSnx) islands eventually at 600 °C. The Sn concentration in Ni(Ge1−xSnx) gradually decreased with increasing RTA temperature, implying the enhancement of Sn out-diffusion from Ni(Ge1−xSnx) grains during the Ni-stanogermanidation process at higher temperature. The out-diffused Sn atoms were accumulated on the surface of Ni(Ge1−xSnx), which could be associated with the low melting temperature of Sn. On the other hand, the out-diffusion of Sn atoms from Ni(Ge1−xSnx) along its interface was dominant during the Ni/Ge1−xSnx interfacial reaction, which could be responsible for the segregation of metallic Sn grains that were spatially confined near the edge of Ni(Ge1−xSnx) islands.

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2

Nakatsuka, Osamu, Yosuke Shimura, Shotaro Takeuchi, Noramasa Tsutsui e Shigeaki Zaima. "Growth and Characterization of Ge_1-xSn_x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices". Materials Science Forum 654-656 (junho de 2010): 1788–91. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1788.

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We have investigated the growth and characteristics of heteroepitaxial Ge1-xSnx layers on various substrates. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing the precipitation of Sn atoms from Ge1-xSnx layers. We succeeded in growing strain-relaxed Ge1-xSnx layers with a Sn content over 9% by controlling the dislocation structure on Si substrates. We also characterized the Hall mobility of Ge1-xSnx layers and found that the incorporation of Sn into Ge effectively reduced the concentration of holes related with vacancy defects, and improved on the hole mobility.

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3

Huang, Hongjuan, Desheng Zhao, Chengjian Qi, Jingfa Huang, Zhongming Zeng, Baoshun Zhang e Shulong Lu. "Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering". Crystals 12, n.º 12 (12 de dezembro de 2022): 1810. http://dx.doi.org/10.3390/cryst12121810.

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Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSnx crystal was strongly dependent on the growth temperature. Among them, the GeSn (400) diffraction peak of the Ge1−xSnx film grown at 240 °C was the lowest, which is consistent with the Raman result. According to the transmission electron microscope image, some dislocations appeared at the interface between the Ge buffer layer and the Si substrate due to the large lattice mismatch, but a highly ordered atomic arrangement was observed at the interface between the Ge buffer layer and the Ge1−xSnx layer. The Ge1−xSnx film prepared by magnetron sputtering is expected to be a cost-effective fabrication method for Si-based infrared devices.

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4

Nakatsuka, Osamu, Shotaro Takeuchi, Yosuke Shimura, Akira Sakai e Shigeaki Zaima. "Strained Ge and Ge_1-xSn_x Technology for Future CMOS Devices". Key Engineering Materials 470 (fevereiro de 2011): 146–51. http://dx.doi.org/10.4028/www.scientific.net/kem.470.146.

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We have investigated the growth and crystalline structures of Ge1-xSnx buffer and tensile-strained Ge layers for future use in CMOS technology. We have demonstrated that strain relaxed Ge1-xSnx layers with an Sn content of 12.3% and 9.2% can be grown on Ge and Si substrates, respectively. We achieved a tensile-strain value of 0.71 % in Ge layers on a Ge0.932Sn0.068 buffer layer. We have also investigated the effects of Sn incorporation into Ge on the electrical properties of Ge1-xSnx heteroepitaxial layers.

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5

Mahmodi, Hadi, Md Hashim, Tetsuo Soga, Salman Alrokayan, Haseeb Khan e Mohamad Rusop. "Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates". Materials 11, n.º 11 (12 de novembro de 2018): 2248. http://dx.doi.org/10.3390/ma11112248.

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In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

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6

Sun, Sheng Liu, Li Xin Zhang, Wen Qi Huang, Zhen Yu Chen, Hao Wang e Chun Qian Zhang. "First-Principal Investigation of Lattice Constants of Si<sub>1-<i>x</i></sub>Ge<i><sub>x</sub></i>, Si<sub>1-<i>x</i></sub>Sn<i><sub>x</sub></i> and Ge<sub>1-<i>x</i></sub>Sn<i><sub>x</sub></i>". Nano Hybrids and Composites 34 (23 de fevereiro de 2022): 77–82. http://dx.doi.org/10.4028/p-uk1s72.

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Silicon-based materials are significant candidates for electronic and optoelectronic applications because of their high electron and hole mobility. Si1-xGex, Si1-xSnx and Ge1-xSnx are currently hot materials in the field of fabricanting silicon-based light-emitting sources. At present, GeSn has been experimentally proved to have a direct band gap structure and achieve photoluminescence. But the more practical electroluminescence has not been realized. There are two reasons of these: one is the cost of experiment is high, which makes it impossible to conduct a comprehensive and in-depth study on these materials; Additionally, the variational laws of the lattice constants have not been reported due to the lack of theoretical and experimental data. In this paper, the lattice constants and bowing factor of Si1-xGex, Si1-xSnx and Ge1-xSnx have been studied by the first-principles method based on density functional theory (DFT) combined with the Special Quasirandom Structures (SQS) and hybrid function of Heyd-Scuseria-Ernzerhof (HSE) functional correction. Comparing the calculated data with the reported theoretical and experimental data, the results show our method is more accurate. In addition, the lattice constant fitting formulas of Si1-xGex, Si1-xSnx and Ge1-xSnx are given, it shows Si1-xSnx can reduce the lattice mismatch when Si1-xSnx as the buffer between Si and GeSn alloy.

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7

Yu-Chen, Li. "Evaluation of the Key Physical Parameters of Compressive Strained Ge1-x Snx for Optoelectronic Devices". Journal of Computational and Theoretical Nanoscience 13, n.º 10 (1 de outubro de 2016): 7399–407. http://dx.doi.org/10.1166/jctn.2016.5733.

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Both strain technology and alloying technology can change the band structures of Germanium semiconductor. This paper focus on evaluation of the key physical parameters, such as energy levels and effective mass, of germanium under strain and alloy conditions, on the basis of deformation potential theory and kp perturbation theory. The results show that: (1), The bandgap transition in Ge1-xSnx alloy cannot occur under strain. So the transformation efficiency of the strained Ge1-xSnx/(001)Ge based devices can not be improved; (2), The various hole effective masses of strained Ge1-xSnx/(001)Ge decrease with the increase of the stress, which benefits to the pMOS performance improvement. Our valid models can provide the valuable references to the design of modified Ge semiconductor and optoelectronic devices.

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8

Concepción Díaz, Omar, Nicolaj Brink Søgaard, Oliver Krause, Jin Hee Bae, Thorsten Brazda, Andreas T. Tiedemann, Qing-Tai Zhao, Detlev Grützmacher e Dan Buca. "(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH₄ and Ge₂H₆". ECS Meeting Abstracts MA2022-02, n.º 32 (9 de outubro de 2022): 1162. http://dx.doi.org/10.1149/ma2022-02321162mtgabs.

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The experimental demonstration of Ge1-xSnx alloys lasers opened group-IV materials towards high-performance electronic and photonic devices that can be easily integrated with the current Si semiconductor technology. In recent years, GeSn-based optoelectronic devices including light-emitting and detectors, modulators, and CMOS have been proven. The major challenges for the Ge1-xSnx epitaxy arise from the low solid solubility of Sn in Ge, the large lattice mismatch, and the reduced thermal stability between Ge and Sn. All these are becoming extremely critical at higher Sn contents. Non-equilibrium conditions offered by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), flash lamp, or laser annealing have been lately investigated. Between them, CVD is to date the preferred growth technique for its current development compatible with the industry offering micron-thick layers with the highest crystal quality. While Tin-tetrachloride (SnCl4) becomes the standard Sn precursor, for Ge different gasses, like germane (GeH4) and digermane (Ge2H6) are used attempting to archive high Sn incorporation and high material quality. While Ge1-xSnx films with the same high Sn content can be obtained regardless of the used precursor, the advantages and disadvantages of each precursor are discussed in this work. The use of Ge2H6 is accompanied by high growth rates, being favorable in applications where relatively thick films are needed, such as laser structures. On the other hand, with a relatively low growth rate, GeH4 provides a greater thickness control, achieving clear and sharp interfaces in heterostructures. For this reason, GeH4 is the appropriate precursor for quantum transport or spintronic. The biggest challenge in heterostructure designs is going up and down in Sn content. The growth of a Ge1-ySny on a Ge1-xSnx, y<x, or SiGeSn layer cannot be performed by increasing the growth temperature. Post-annealing processes lead to strong crystallinity degradation of the already grown layer by strong Sn diffusion or Sn segregation due to the limited thermal stability of Ge1-xSnx alloys. In this work, we address simple methodologies to enhance the gradient or step Sn content without changing the process temperature. Controlling only the carrier gas flow while keeping the standard growth parameters constant, high-quality Ge1-xSnx alloys with uniform Sn content up to 15 at.% are obtained. The proposed method acts as guidance to produce Ge1-xSnx heterostructures that can be extended to any CVD reactor, independently of the used precursor, GeH4 or Ge2H6. Different devices structures are presented proving the applicability of the isothermal multilayer growth. Figure 1

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9

Wangila, Emmanuel, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu et al. "The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire". Crystals 14, n.º 5 (28 de abril de 2024): 414. http://dx.doi.org/10.3390/cryst14050414.

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Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established.

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10

Qiu, Yingxin, Runsheng Wang, Qianqian Huang e Ru Huang. "Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor". Journal of Applied Physics 115, n.º 23 (21 de junho de 2014): 234505. http://dx.doi.org/10.1063/1.4883760.

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11

Nishimura, Tsuyoshi, Osamu Nakatsuka, Yosuke Shimura, Shotaro Takeuchi, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo e Shigeaki Zaima. "Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems". Solid-State Electronics 60, n.º 1 (junho de 2011): 46–52. http://dx.doi.org/10.1016/j.sse.2011.01.025.

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12

Wang, Suyuan, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng e Qiming Wang. "Numerical calculation of strain-N+-Ge1−xSnx/P+-δGe1−xSnx/N−-Ge1−y−zSiySnz/P+-Ge1−y−zSiySnzheterojunction tunnel field-effect transistor". Japanese Journal of Applied Physics 56, n.º 5 (18 de abril de 2017): 054001. http://dx.doi.org/10.7567/jjap.56.054001.

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13

Lin, Hai, Robert Chen, Yijie Huo, Theodore I. Kamins e James S. Harris. "Raman study of strained Ge1−xSnx alloys". Applied Physics Letters 98, n.º 26 (27 de junho de 2011): 261917. http://dx.doi.org/10.1063/1.3606384.

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14

Loo, R., B. Vincent, F. Gencarelli, C. Merckling, A. Kumar, G. Eneman, L. Witters et al. "(Invited) Ge1-xSnx Materials: Challenges and Applications". ECS Transactions 50, n.º 9 (15 de março de 2013): 853–63. http://dx.doi.org/10.1149/05009.0853ecst.

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15

Shang, Colleen K., Vivian Wang, Robert Chen, Suyog Gupta, Yi-Chiau Huang, James J. Pao, Yijie Huo et al. "Dry-wet digital etching of Ge1−xSnx". Applied Physics Letters 108, n.º 6 (8 de fevereiro de 2016): 063110. http://dx.doi.org/10.1063/1.4941800.

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16

Takeuchi, S., Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester et al. "Ge1−xSnx stressors for strained-Ge CMOS". Solid-State Electronics 60, n.º 1 (junho de 2011): 53–57. http://dx.doi.org/10.1016/j.sse.2011.01.022.

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17

Gupta, Suyog, Robert Chen, Yi-Chiau Huang, Yihwan Kim, Errol Sanchez, James S. Harris e Krishna C. Saraswat. "Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–xSnx): A Novel Route for Ge1–xSnx Nanostructure Fabrication". Nano Letters 13, n.º 8 (10 de julho de 2013): 3783–90. http://dx.doi.org/10.1021/nl4017286.

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18

Shimura, Y., W. Wang, W. Vandervorst, F. Gencarelli, A. Gassenq, G. Roelkens, A. Vantomme, M. Caymax e R. Loo. "(Invited) Ge1-xSnx Optical Devices: Growth and Applications". ECS Transactions 64, n.º 6 (12 de agosto de 2014): 677–87. http://dx.doi.org/10.1149/06406.0677ecst.

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19

Ladrón de Guevara, H. Pérez, A. G. Rodrı́guez, H. Navarro-Contreras e M. A. Vidal. "Ge1−xSnx alloys pseudomorphically grown on Ge(001)". Applied Physics Letters 83, n.º 24 (15 de dezembro de 2003): 4942–44. http://dx.doi.org/10.1063/1.1634374.

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20

Stange, D., S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher e D. Buca. "Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys". ACS Photonics 2, n.º 11 (16 de outubro de 2015): 1539–45. http://dx.doi.org/10.1021/acsphotonics.5b00372.

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21

Mäder, K. A., A. Baldereschi e H. von Känel. "Band structure and instability of Ge1−xSnx alloys". Solid State Communications 69, n.º 12 (março de 1989): 1123–26. http://dx.doi.org/10.1016/0038-1098(89)91046-6.

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22

Attar, Gopal Singh, Mimi Liu, Cheng-Yu Lai e Daniela R. Radu. "Green Synthesis of Ge1−xSnx Alloy Nanoparticles for Optoelectronic Applications". Crystals 11, n.º 10 (8 de outubro de 2021): 1216. http://dx.doi.org/10.3390/cryst11101216.

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Compositionally controlled, light-emitting, group IV semiconductor nanomaterials have potential to enable on-chip data communications and infrared (IR) imaging devices compatible with the complementary metal−oxide−semiconductor (CMOS) technology. The recent demonstration of a direct band gap laser in Ge-Sn alloys opens avenues to the expansion of Si-photonics. Ge-Sn alloys showed improved effective carrier mobility as well as direct band gap behavior at Sn composition above 6–11%. In this work, Ge1−xSnx alloy nanoparticles with varying Sn compositions from x = 0.124 to 0.178 were prepared via colloidal synthesis using sodium borohydride (NaBH4), a mild and non-hazardous reducing reagent. Successful removal of the synthesized long-alkyl-chain ligands present on nanoparticles’ surfaces, along with the passivation of the Ge-Sn nanoparticle surface, was achieved using aqueous (NH4)2S. The highly reactive surface of the nanoparticles prior to ligand exchange often leads to the formation of germanium oxide (GeO2). This work demonstrates that the (NH4)2S further acts as an etching reagent to remove the oxide layer from the particles’ surfaces. The compositional control and long-term stability will enable the future use of these easily prepared Ge1−xSnx nanoalloys in optoelectronic devices.

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23

Fukuda, Masahiro, Kazuhiro Watanabe, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka e Shigeaki Zaima. "Control of Ge1−x−ySixSnylayer lattice constant for energy band alignment in Ge1−xSnx/Ge1−x−ySixSnyheterostructures". Semiconductor Science and Technology 32, n.º 10 (7 de setembro de 2017): 104008. http://dx.doi.org/10.1088/1361-6641/aa80ce.

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24

Korolyuk, Yu G., V. G. Deibuk e Ya I. Vyklyuk. "Optical properties of disordeed diamond-like solid substitutional solutions Ge1-xSix, Ge1-xSnx, Si1-xSnx, Si1-xCx and their thin films". Journal of Physical Studies 8, n.º 1 (2004): 77–83. http://dx.doi.org/10.30970/jps.08.77.

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25

Suda, K., S. Ishihara, N. Sawamoto, H. Machida, M. Ishikawa, H. Sudoh, Y. Ohshita e A. Ogura. "Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD". ECS Transactions 64, n.º 6 (12 de agosto de 2014): 697–701. http://dx.doi.org/10.1149/06406.0697ecst.

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26

Alan Esteves, Richard J., Shopan Hafiz, Denis O. Demchenko, Ümit Özgür e Indika U. Arachchige. "Ultra-small Ge1−xSnx quantum dots with visible photoluminescence". Chemical Communications 52, n.º 78 (2016): 11665–68. http://dx.doi.org/10.1039/c6cc04242b.

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Plot of theoretical energy gaps of Ge_1−xSn_x quantum dots. Background images are a TEM image of Ge_1−xSn_x quantum dots and a picture of a cuvette containing luminescent Ge_1−xSn_x QDs irradiated by a UV light.

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27

Demeulemeester, J., A. Schrauwen, O. Nakatsuka, S. Zaima, M. Adachi, Y. Shimura, C. M. Comrie et al. "Sn diffusion during Ni germanide growth on Ge1–xSnx". Applied Physics Letters 99, n.º 21 (21 de novembro de 2011): 211905. http://dx.doi.org/10.1063/1.3662925.

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Roucka, R., J. Tolle, C. Cook, A. V. G. Chizmeshya, J. Kouvetakis, V. D’Costa, J. Menendez, Zhihao D. Chen e S. Zollner. "Versatile buffer layer architectures based on Ge1−xSnx alloys". Applied Physics Letters 86, n.º 19 (9 de maio de 2005): 191912. http://dx.doi.org/10.1063/1.1922078.

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29

Piao, J. "Molecular-beam epitaxial growth of metastable Ge1−xSnx alloys". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, n.º 2 (março de 1990): 221. http://dx.doi.org/10.1116/1.584814.

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30

Kurosawa, Masashi, Yukihiro Imai, Taisei Iwahashi, Kouta Takahashi, Mitsuo Sakashita, Osamu Nakatsuka e Shigeaki Zaima. "(Invited) A New Application of Ge1−xSnx: Thermoelectric Materials". ECS Transactions 86, n.º 7 (20 de julho de 2018): 321–28. http://dx.doi.org/10.1149/08607.0321ecst.

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31

Kumar, Arul, Manu P. Komalan, Haraprasanna Lenka, Ajay Kumar Kambham, Matthieu Gilbert, Federica Gencarelli, Benjamin Vincent e Wilfried Vandervorst. "Atomic insight into Ge1−xSnx using atom probe tomography". Ultramicroscopy 132 (setembro de 2013): 171–78. http://dx.doi.org/10.1016/j.ultramic.2013.02.009.

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32

Srinivasan, V. S. Senthil, Inga A. Fischer, Lion Augel, Anja Hornung, Roman Koerner, Konrad Kostecki, Michael Oehme, Erlend Rolseth e Joerg Schulze. "Contact resistivities of antimony-doped n-type Ge1−xSnx". Semiconductor Science and Technology 31, n.º 8 (23 de junho de 2016): 08LT01. http://dx.doi.org/10.1088/0268-1242/31/8/08lt01.

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33

Asano, Takanori, Noriyuki Taoka, Osamu Nakatsuka e Shigeaki Zaima. "Formation of high-quality Ge1−xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1−xSnx/Ge interfaces". Applied Physics Express 7, n.º 6 (7 de maio de 2014): 061301. http://dx.doi.org/10.7567/apex.7.061301.

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34

Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong e Shu Bin. "Study on intrinsic carrier concentration of direct bandgap Ge1-xSnx". Acta Physica Sinica 63, n.º 23 (2014): 238502. http://dx.doi.org/10.7498/aps.63.238502.

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35

Kostecki, K., M. Oehme, R. Koerner, D. Widmann, M. Gollhofer, S. Bechler, G. Mussler, D. Buca, E. Kasper e J. Schulze. "Virtual Substrate Technology for Ge1-XSnX Heteroepitaxy on Si Substrates". ECS Transactions 64, n.º 6 (12 de agosto de 2014): 811–18. http://dx.doi.org/10.1149/06406.0811ecst.

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36

Perez Ladron de Guevara, H., A. G. Rodriguez Vazquez, H. R. Navarro Contreras e M. A. Vidal Borbolla. "Ge1-xSnx Alloys Pseudomorphically Grown on Ge (001) by Sputtering". ECS Transactions 50, n.º 9 (15 de março de 2013): 413–17. http://dx.doi.org/10.1149/05009.0413ecst.

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37

Low, K. L., Y. Yang, G. Han, W. J. Fan e Y. C. Yeo. "Electronic Band Structure and Effective Masses of Ge1-xSnx Alloys". ECS Transactions 50, n.º 9 (15 de março de 2013): 519–26. http://dx.doi.org/10.1149/05009.0519ecst.

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Ghetmiri, Seyed Amir, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Greg Sun, Richard A. Soref et al. "Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32, n.º 6 (novembro de 2014): 060601. http://dx.doi.org/10.1116/1.4897917.

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Chang, Chiao, Hui Li, Tsung-Pin Chen, Wei-Kai Tseng, Henry Cheng, Chung-Ting Ko, Chung-Yen Hsieh, Miin-Jang Chen e Greg Sun. "The strain dependence of Ge1−xsnx (x=0.083) Raman shift". Thin Solid Films 593 (outubro de 2015): 40–43. http://dx.doi.org/10.1016/j.tsf.2015.09.040.

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Shimura, Yosuke, Shotaro Takeuchi, Osamu Nakatsuka, Akira Sakai e Shigeaki Zaima. "Control of strain relaxation behavior of Ge1−xSnx buffer layers". Solid-State Electronics 60, n.º 1 (junho de 2011): 84–88. http://dx.doi.org/10.1016/j.sse.2011.01.023.

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Newton, Kathryn A., Heather Renee Sully, Frank Bridges, Sue A. Carter e Susan M. Kauzlarich. "Structural Characterization of Oleylamine- and Dodecanethiol-Capped Ge1–xSnx Alloy Nanocrystals". Journal of Physical Chemistry C 125, n.º 11 (16 de março de 2021): 6401–17. http://dx.doi.org/10.1021/acs.jpcc.0c11637.

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Olorunsola, Oluwatobi, Hryhorii Stanchu, Solomon Ojo, Krishna Pandey, Abdulla Said, Joe Margetis, John Tolle et al. "Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys". Crystals 11, n.º 8 (31 de julho de 2021): 905. http://dx.doi.org/10.3390/cryst11080905.

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Resumo:

We report on the connection between strain, composition, defect density and the photoluminescence observed before and after annealing at 300 °C for GeSn samples with Sn content of 8% to 10%. Results show how the composition and level of strain influenced the separation between the indirect and direct optical transitions, while changes in the level of strain also influenced the density of misfit dislocations and surface roughness. The effect of annealing is observed to lower the level of strain, decreasing the energy separation between the indirect and direct optical transitions, while also simultaneously increasing the density of misfit/threading dislocations and surface roughness. The reduction in energy separation leads to an increase of photoluminescence (PL) emission, while the increase of misfit/threading dislocations density and surface roughness results in a decrease of PL. Consequently, the competition between these factors is observed to determine the impact of annealing on the PL. As a result, annealing increases the collected PL for small (≤40 meV) separation between the indirect to direct optical transitions in the as-grown sample while decreases the PL for larger (≥60 meV) separations. More generally, these numbers have a small dependence on the level of strain in the as-grown samples.

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Zheng, Jun, Yongwang Zhang, Zhi Liu, Yuhua Zuo, Chuanbo Li, Chunlai Xue, Buwen Cheng e Qiming Wang. "Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx". IEEE Transactions on Electron Devices 65, n.º 11 (novembro de 2018): 4971–74. http://dx.doi.org/10.1109/ted.2018.2867622.

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Qian, Li, Jinchao Tong, Weijun Fan, Ji Sheng Pan e Dao Hua Zhang. "Growth of Direct Bandgap Ge1−xSnx Alloys by Modified Magnetron Sputtering". IEEE Journal of Quantum Electronics 56, n.º 1 (fevereiro de 2020): 1–4. http://dx.doi.org/10.1109/jqe.2019.2956347.

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Marshall, Ann F., Andrew Meng, Michael Braun, Anahita Pakzad, Huikai Cheng e Paul C. McIntyre. "Strain and Sn distribution in Ge/Ge1−xSnx Core-Shell Nanowires". Microscopy and Microanalysis 25, S2 (agosto de 2019): 2146–47. http://dx.doi.org/10.1017/s1431927619011462.

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Bouarissa, N., e F. Annane. "Electronic properties and elastic constants of the ordered Ge1−xSnx alloys". Materials Science and Engineering: B 95, n.º 2 (agosto de 2002): 100–106. http://dx.doi.org/10.1016/s0921-5107(02)00203-9.

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Marshall, Ann F., Gerentt Chan, Andrew C. Meng, Michael Braun e Paul C. McIntyre. "Ge Nanowires: Sn Catalysts and Ge/Ge1-xSnx Core-Shell Structures". Microscopy and Microanalysis 23, S1 (julho de 2017): 1730–31. http://dx.doi.org/10.1017/s143192761700931x.

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Demchenko, Denis O., Venkatesham Tallapally, Richard J. Alan Esteves, Shopan Hafiz, Tanner A. Nakagawara, Indika U. Arachchige e Ümit Özgür. "Optical Transitions and Excitonic Properties of Ge1–xSnx Alloy Quantum Dots". Journal of Physical Chemistry C 121, n.º 33 (16 de agosto de 2017): 18299–306. http://dx.doi.org/10.1021/acs.jpcc.7b06458.

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Seifner, Michael S., Felix Biegger, Alois Lugstein, Johannes Bernardi e Sven Barth. "Microwave-Assisted Ge1–xSnx Nanowire Synthesis: Precursor Species and Growth Regimes". Chemistry of Materials 27, n.º 17 (21 de agosto de 2015): 6125–30. http://dx.doi.org/10.1021/acs.chemmater.5b02757.

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Gao, Kun, S. Prucnal, R. Huebner, C. Baehtz, I. Skorupa, Yutian Wang, W. Skorupa, M. Helm e Shengqiang Zhou. "Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting". Applied Physics Letters 105, n.º 4 (28 de julho de 2014): 042107. http://dx.doi.org/10.1063/1.4891848.

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