Artigos de revistas sobre o tema "Gate oxide reliability"
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Wan, Caiping, Yuanhao Zhang, Wenhao Lu, Niannian Ge, Tianchun Ye e Hengyu Xu. "Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate". Semiconductor Science and Technology 37, n.º 5 (7 de abril de 2022): 055008. http://dx.doi.org/10.1088/1361-6641/ac606d.
Texto completo da fonteMonsieur, F., E. Vincent, D. Roy, S. Bruyère, G. Pananakakis e G. Ghibaudo. "Gate oxide Reliability assessment optimization". Microelectronics Reliability 42, n.º 9-11 (setembro de 2002): 1505–8. http://dx.doi.org/10.1016/s0026-2714(02)00179-8.
Texto completo da fonteFronheiser, Jody, Aveek Chatterjee, Ulrike Grossner, Kevin Matocha, Vinayak Tilak e Liang Chun Yu. "Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability". Materials Science Forum 679-680 (março de 2011): 354–57. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.354.
Texto completo da fonteLee, Seok-Woo. "Novel Dual Gate Oxide Process with Improved Gate Oxide Integrity Reliability". Electrochemical and Solid-State Letters 3, n.º 1 (1999): 56. http://dx.doi.org/10.1149/1.1390957.
Texto completo da fonteMoazzami, R., e C. Hu. "Projecting gate oxide reliability and optimizing reliability screens". IEEE Transactions on Electron Devices 37, n.º 7 (julho de 1990): 1643–50. http://dx.doi.org/10.1109/16.55751.
Texto completo da fonteWeir, B. E., M. A. Alam, P. J. Silverman, F. Baumann, D. Monroe, J. D. Bude, G. L. Timp et al. "Ultra-thin gate oxide reliability projections". Solid-State Electronics 46, n.º 3 (março de 2002): 321–28. http://dx.doi.org/10.1016/s0038-1101(01)00103-4.
Texto completo da fonteDeivasigamani, Ravi, Gene Sheu, Aanand, Shao Wei Lu, Syed Sarwar Imam, Chiu-Chung Lai e Shao-Ming Yang. "Study of HCI Reliability for PLDMOS". MATEC Web of Conferences 201 (2018): 02001. http://dx.doi.org/10.1051/matecconf/201820102001.
Texto completo da fonteSenzaki, Junji, Atsushi Shimozato, Kozutoshi Kajima, Keiko Aryoshi, Takahito Kojima, Shinsuke Harada, Yasunori Tanaka, Hiroaki Himi e Hajime Okumura. "Electrical Properties of MOS Structures on 4H-SiC (11-20) Face". Materials Science Forum 740-742 (janeiro de 2013): 621–24. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.621.
Texto completo da fonteYamada, Keiichi, Osamu Ishiyama, Kentaro Tamura, Tamotsu Yamashita, Atsushi Shimozato, Tomohisa Kato, Junji Senzaki, Hirohumi Matsuhata e Makoto Kitabatake. "Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment". Materials Science Forum 778-780 (fevereiro de 2014): 545–48. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.545.
Texto completo da fonteLiang, Xiaowen, Jiangwei Cui, Jing Sun, Haonan Feng, Dan Zhang, Xiaojuan Pu, Xuefeng Yu e Qi Guo. "The Influence of 10 MeV Proton Irradiation on Silicon Carbide Power Metal-Oxide-Semiconductor Field-Effect Transistor". Journal of Nanoelectronics and Optoelectronics 17, n.º 5 (1 de maio de 2022): 814–19. http://dx.doi.org/10.1166/jno.2022.3255.
Texto completo da fonteLee, Kwangwon, Young Ho Seo, Taeseop Lee, Kyeong Seok Park, Martin Domeij, Fredrik Allerstam e Thomas Neyer. "Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET". Materials Science Forum 1004 (julho de 2020): 554–58. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.554.
Texto completo da fonteHatakeyama, Tetsuo, Takuma Suzuki, Junji Senzaki, Kenji Fukuda, Hirofumi Matsuhata, Takashi Shinohe e Kazuo Arai. "Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC". Materials Science Forum 600-603 (setembro de 2008): 783–86. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.783.
Texto completo da fonteSuzuki, Takuma, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe e Kazuo Arai. "Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)". Materials Science Forum 600-603 (setembro de 2008): 791–94. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.791.
Texto completo da fonteZhou, Yaohui, Song Zhang, Qun Liu, Dejin Wang, Yaling Ma e Mincheng Li. "Composite Gate Oxide Method for Improving the Reliability and Leakage Performance of Deep Submicron CMOS Processes". Journal of Physics: Conference Series 2645, n.º 1 (1 de novembro de 2023): 012009. http://dx.doi.org/10.1088/1742-6596/2645/1/012009.
Texto completo da fonteNam, Kab-Jin, Kee-Won Kwon e Byoungdeog Choi. "Reliability Analysis on TiN Gated NMOS Transistors". Science of Advanced Materials 13, n.º 6 (1 de junho de 2021): 1178–85. http://dx.doi.org/10.1166/sam.2021.3986.
Texto completo da fonteLee, J. C., Chen Ih-Chin e Hu Chenming. "Modeling and characterization of gate oxide reliability". IEEE Transactions on Electron Devices 35, n.º 12 (1988): 2268–78. http://dx.doi.org/10.1109/16.8802.
Texto completo da fonteSenzaki, Junji, Atsushi Shimozato, Kazutoshi Kojima, Tomohisa Kato, Yasunori Tanaka, Kenji Fukuda e Hajime Okumura. "Challenges of High-Performance and High-Reliablity in SiC MOS Structures". Materials Science Forum 717-720 (maio de 2012): 703–8. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.703.
Texto completo da fonteMengotti, Elena, Enea Bianda, Stephan Wirths, David Baumann, Jason Bettega e Joni Jormanainen. "High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs". Materials Science Forum 1004 (julho de 2020): 1033–44. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1033.
Texto completo da fonteSchlichting, Holger, Minwho Lim, Tom Becker, Birgit Kallinger e Tobias Erlbacher. "The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability". Materials Science Forum 1090 (31 de maio de 2023): 127–33. http://dx.doi.org/10.4028/p-4i3rhf.
Texto completo da fonteKojima, Takahito, Shinsuke Harada, Keiko Ariyoshi, Junji Senzaki, Manabu Takei, Yoshiyuki Yonezawa, Yasunori Tanaka e Hajime Okumura. "Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide". Materials Science Forum 778-780 (fevereiro de 2014): 537–40. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.537.
Texto completo da fontePark, Jong T., Dae N. Ha, Chong G. Yu, Byung G. Park e Jong D. Lee. "Diagnostic technique for projecting gate oxide reliability and device reliability". Microelectronics Reliability 37, n.º 10-11 (outubro de 1997): 1421–24. http://dx.doi.org/10.1016/s0026-2714(97)00077-2.
Texto completo da fonteXu, Heng Yu, Cai Ping Wan e Jin Ping Ao. "Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing". Materials Science Forum 954 (maio de 2019): 109–13. http://dx.doi.org/10.4028/www.scientific.net/msf.954.109.
Texto completo da fonteDas, Mrinal K., Sarah K. Haney, Jim Richmond, Anthony Olmedo, Q. Jon Zhang e Zoltan Ring. "SiC MOSFET Reliability Update". Materials Science Forum 717-720 (maio de 2012): 1073–76. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1073.
Texto completo da fonteCheung, Kin P. "On the “intrinsic” breakdown of thick gate oxide". Journal of Applied Physics 132, n.º 14 (14 de outubro de 2022): 144505. http://dx.doi.org/10.1063/5.0118081.
Texto completo da fonteTanimoto, Satoshi. "Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics". Materials Science Forum 527-529 (outubro de 2006): 955–60. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.955.
Texto completo da fonteYamada, Keiichi, Junji Senzaki, Kazutoshi Kojima e Hajime Okumura. "A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation". Materials Science Forum 858 (maio de 2016): 433–36. http://dx.doi.org/10.4028/www.scientific.net/msf.858.433.
Texto completo da fonteSuzuki, Takuma, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe e Kazuo Arai. "Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation". Materials Science Forum 615-617 (março de 2009): 557–60. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.557.
Texto completo da fonteSuzuki, Takuma, Hirotaka Yamaguchi, Tetsuo Hatakeyama, Hirofumi Matsuhata, Junji Senzaki, Kenji Fukuda, Takashi Shinohe e Hajime Okumura. "Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face". Materials Science Forum 717-720 (maio de 2012): 789–92. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.789.
Texto completo da fonteYugami, Jiro. "Oxide reliability improvement controlling microstructures of substrate/oxide and oxide/gate interfaces". Superlattices and Microstructures 27, n.º 5-6 (maio de 2000): 395–404. http://dx.doi.org/10.1006/spmi.2000.0878.
Texto completo da fonteAhn, J., W. Ting e D. L. Kwong. "Comparison of performance and reliability between MOSFETs with LPCVD gate oxide and thermal gate oxide". IEEE Transactions on Electron Devices 38, n.º 12 (1991): 2709–10. http://dx.doi.org/10.1109/16.158737.
Texto completo da fonteGabriel, Calvin T., e Subhash R. Nariani. "Correlation of antenna charging and gate oxide reliability". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, n.º 3 (maio de 1996): 990–94. http://dx.doi.org/10.1116/1.580068.
Texto completo da fonteWu, J., e E. Rosenbaum. "Gate Oxide Reliability Under ESD-Like Pulse Stress". IEEE Transactions on Electron Devices 51, n.º 7 (julho de 2004): 1192–96. http://dx.doi.org/10.1109/ted.2004.829894.
Texto completo da fonteWu, J., e E. Rosenbaum. "Gate Oxide Reliability Under ESD-Like Pulse Stress". IEEE Transactions on Electron Devices 51, n.º 9 (setembro de 2004): 1528–32. http://dx.doi.org/10.1109/ted.2004.834683.
Texto completo da fonteVollertsen, R. P., e W. W. Abadeer. "Comprehensive gate-oxide reliability evaluation for dram processes". Microelectronics Reliability 36, n.º 11-12 (novembro de 1996): 1631–38. http://dx.doi.org/10.1016/0026-2714(96)00162-x.
Texto completo da fonteGonzalez, Jose Ortiz, Olayiwola Alatise e Philip A. Mawby. "Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs". Materials Science Forum 963 (julho de 2019): 749–52. http://dx.doi.org/10.4028/www.scientific.net/msf.963.749.
Texto completo da fonteYeo, Yee-Chia, Qiang Lu e Chenming Hu. "MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications". International Journal of High Speed Electronics and Systems 11, n.º 03 (setembro de 2001): 849–86. http://dx.doi.org/10.1142/s0129156401001015.
Texto completo da fonteTakeda, Mikako, Takeshi Ohwaki, Hideo Fujii, Eisuke Kusumoto, Yoshiyuki Kaihara, Yoshizo Takai e Ryuichi Shimizu. "Influence of Native Oxides on the Reliability of Ultrathin Gate Oxide". Japanese Journal of Applied Physics 37, Part 1, No. 2 (15 de fevereiro de 1998): 397–401. http://dx.doi.org/10.1143/jjap.37.397.
Texto completo da fonteGrella, K., S. Dreiner, H. Vogt e U. Paschen. "High Temperature Reliability Investigations up to 350 °C of Gate Oxide Capacitors realized in a Silicon-on-Insulator CMOS-Technology". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (1 de janeiro de 2013): 000116–21. http://dx.doi.org/10.4071/hiten-ta13.
Texto completo da fonteGrella, K., S. Dreiner, H. Vogt e U. Paschen. "Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology". Journal of Microelectronics and Electronic Packaging 10, n.º 4 (1 de outubro de 2013): 150–54. http://dx.doi.org/10.4071/imaps.391.
Texto completo da fonteKamgar, A., H. M. Vaidya, F. H. Baumann e S. Nakahara. "Impact of gate-poly grain structure on the gate-oxide reliability [CMOS]". IEEE Electron Device Letters 23, n.º 1 (janeiro de 2002): 22–24. http://dx.doi.org/10.1109/55.974800.
Texto completo da fonteMa, T. P. "Metal–oxide–semiconductor gate oxide reliability and the role of fluorine". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, n.º 4 (julho de 1992): 705–12. http://dx.doi.org/10.1116/1.577714.
Texto completo da fonteMatocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre e Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules". Materials Science Forum 645-648 (abril de 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.
Texto completo da fonteHatakeyama, Tetsuo, Hiroshi Kono, Takuma Suzuki, Junji Senzaki, Kenji Fukuda, Takashi Shinohe e Kazuo Arai. "Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC". Materials Science Forum 615-617 (março de 2009): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.553.
Texto completo da fonteLichtenwalner, Daniel J., Shadi Sabri, Edward van Brunt, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Scott Allen e John W. Palmour. "Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers". Materials Science Forum 963 (julho de 2019): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.963.745.
Texto completo da fonteDjoric-Veljkovic, Snezana, Ivica Manic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic e Ninoslav Stojadinovic. "Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs". Nuclear Technology and Radiation Protection 26, n.º 1 (2011): 18–24. http://dx.doi.org/10.2298/ntrp1101018d.
Texto completo da fonteRajput, Renu, e Rakesh Vaid. "Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review". Facta universitatis - series: Electronics and Energetics 33, n.º 2 (2020): 155–67. http://dx.doi.org/10.2298/fuee2002155r.
Texto completo da fonteKagawa, Yasuhiro, Nobuo Fujiwara, Katsutoshi Sugawara, Rina Tanaka, Yutaka Fukui, Yasuki Yamamoto, Naruhisa Miura, Masayuki Imaizumi, Shuhei Nakata e Satoshi Yamakawa. "4H-SiC Trench MOSFET with Bottom Oxide Protection". Materials Science Forum 778-780 (fevereiro de 2014): 919–22. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.919.
Texto completo da fonteFujihira, Keiko, Shohei Yoshida, Naruhisa Miura, Yukiyasu Nakao, Masayuki Imaizumi, Tetsuya Takami e Tatsuo Oomori. "TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition". Materials Science Forum 600-603 (setembro de 2008): 799–802. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.799.
Texto completo da fonteHatakeyama, Tetsuo, Takuma Suzuki, Kyoichi Ichinoseki, Hirofumi Matsuhata, Kenji Fukuda, Takashi Shinohe e Kazuo Arai. "Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC". Materials Science Forum 645-648 (abril de 2010): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.799.
Texto completo da fonteHarada, Shinsuke, Makoto Kato, Sachiko Ito, Kenji Suzuki, Takasumi Ohyanagi, Junji Senzaki, Kenji Fukuda, Hajime Okumura e Kazuo Arai. "Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face". Materials Science Forum 615-617 (março de 2009): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.549.
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