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Livros sobre o tema "Gallium nitride"

Autor: Grafiati

Publicado: 4 de junho de 2021

Última modificação: 2 de novembro de 2024

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1

1922-, Pankove Jacques I., e Moustakas T. D, eds. Gallium nitride (GaN). San Diego: Academic Press, 1998.

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2

1922-, Pankove Jacques I., Moustakas T. D e Willardson Robert K, eds. Gallium nitride (GaN) II. San Diego: Academic Press, 1999.

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3

Feenstra, Randall M., e Colin E. C. Wood, eds. Porous Silicon Carbide and Gallium Nitride. Chichester, UK: John Wiley & Sons, Ltd, 2008. http://dx.doi.org/10.1002/9780470751817.

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4

Ehrentraut, Dirk, Elke Meissner e Michal Bockowski, eds. Technology of Gallium Nitride Crystal Growth. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-04830-2.

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5

B, Gil, ed. Low-dimensional nitride semiconductors. Oxford: Oxford University Press, 2002.

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6

Michael, Shur, e Davis Robert F. 1942-, eds. GaN-based materials and devices: Growth, fabrication, characterization and performance. Singapore: World Scientific, 2004.

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7

International Conference on Nitride Semiconductors (4th 2001 Denver, Colo.). ICNS-4: Fourth International Conference on Nitride Semiconductors, Denver, Colorado, USA, 2001 : proceedings. Berlin: Wiley-VCH, 2002.

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8

Chuan, Feng Zhe, ed. III-nitride devices and nanoengineering. London: Imperial College Press, 2008.

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9

Vserossiĭskoe soveshchanie "Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory" (2nd 1998 St. Petersburg, Russia). Nitridy gallii︠a︡, indii︠a︡ i ali︠u︡minii︠a︡--struktury i pribory: Materialy 2-go vserossiĭskogo soveshchanii︠a︡, 2 ii︠u︡nii︠a︡ 1998 g., Sankt-Peterburgskiĭ gosudarstvennyĭ tekhnicheskiĭ universitet = Gallium nitride, indium nitride, aluminum nitride--structures and devices : technical digest : the 2nd Russian Workshop, June 2, 1998, St.-Petersburg State Technical University. Sankt-Peterburg: Sankt-Peterburgskiĭ gos. tekhn. universitet, 1998.

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10

Conference on Semiconducting and Insulating Materials (9th 1996 Toulouse, France). Semiconducting and insulating materials 1996: Proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC'9), April 29/May 3, 1996, Toulouse, France. New York: Institute of Electrical and Electronics Engineers, 1996.

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11

International, Workshop on Nitride Semiconductors (2000 Nagoya Japan). IWN Nagoya 2000: International Workshop on Nitride Semiconductors : IWN2000 : September 24-27, 2000, Nagoya Congress Center, Nagoya, Japan. Tokyo: Institute of Pure and Applied Physics, 2000.

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12

Fong, Chee Yong. Sol-gel spin coating growth of gallium nitride thin films: A simple, safe, and cheap approach. Pulau Pinang: Penerbit Universiti Sains Malaysia, 2018.

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13

Meneghesso, Gaudenzio, Matteo Meneghini e Enrico Zanoni, eds. Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2.

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14

H, Edgar James, ed. Properties, processing and applications of gallium nitride and related semiconductors. London: INSPEC, 1999.

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15

A, Ponce Fernando, ed. Gallium nitride and related materials: The First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1996.

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16

W, Litton Cole, e Society of Photo-optical Instrumentation Engineers., eds. Gallium nitride materials and devices: 23-25 January 2006, San Jose, California, USA. Bellingham, Wash: SPIE, 2006.

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17

C, Wood Colin E., ed. Porous silicon carbide and gallium nitride: Epitaxy, catalysis, and biotechnology applications. Chichester, England: John Wiley & Sons, 2008.

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18

Korbutowicz, Ryszard. Epitaksja grubych warstw azotku galu. Wrocław: Oficyna Wydawnicza Politechniki Wrocławskiej, 2008.

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19

Korbutowicz, Ryszard. Epitaksja grubych warstw azotku galu. Wrocław: Oficyna Wydawnicza Politechniki Wrocławskiej, 2008.

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20

Symposium on GaN, AIN, InN and Related Materials (2005 Boston, Mass.). GaN, AIN, InN and related materials: Symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A. Editado por Kuball Martin e Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.

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21

European, GaN Workshop (2nd 1997 Sophia-Antipolis France). EGW-2 proceedings: The Second European GaN Workshop, June 11-13, 1997, Valbonne Sophia-Antipolis, France. [S.l.]: Materials Research Society, 1997.

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22

European GaN Workshop (3rd 1998 Jadwisin, Poland). EGW-3 proceedings: The Third European GaN Workshop, held June 22-24 June 1998, Jadwisin, Poland. Editado por Krukowski Stanisław. Warrendale, PA: Materials Research Society, 1999.

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23

European GaN Workshop (1st 1996 Rigi-Kaltbad, Switzerland). EGW-1 proceedings: The First European GaN Workshop held June 2-4, 1996, Rigi, Switzerland. Editado por Hellman Eric Sven, Kamp Markus e Strite Toby. [S.l.]: Materials Research Society, 1997.

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24

R, Abernathy C., Amano H e Zolper J. C, eds. Gallium nitride and related materials II: Symposium held April 1-4, 1997, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1997.

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25

Szweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Oxford, UK: Elsevier Advanced Technology, 1997.

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26

Russell, D. The preparation and characterisation of gallium nitride and group III-V related compounds. Leicester: De Montfort University, 2003.

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27

Friedhelm, Bechstedt, Meyer B. K, Stutzmann M e Deutsche Forschungsgemeinschaft, eds. Group III-nitrides and their heterostructures: Growth, characterization and applications. Weinheim: Wiley-VCH, 2003.

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28

Gallium Nitride Electronics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-71892-5.

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29

Gallium nitride electronics. Berlin: Springer, 2008.

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30

Quay, Rüdiger. Gallium Nitride Electronics. Springer, 2010.

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31

Willardson, Robert K., Theodore D. Moustakas, Eicke R. Weber e Jacques I. Pankove. Gallium Nitride (GaN) I. Elsevier Science & Technology Books, 1998.

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32

Yu, Hongyu, e Tianli Duan, eds. Gallium Nitride Power Devices. Jenny Stanford Publishing, 2017. http://dx.doi.org/10.1201/9781315196626.

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33

Gallium Nitride (GaN) I. Elsevier, 1997. http://dx.doi.org/10.1016/s0080-8784(08)x6082-x.

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34

Gallium Nitride Power Devices. Taylor & Francis Group, 2017.

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35

Yu, HongYu, e Tianli Duan. Gallium Nitride Power Devices. Jenny Stanford Publishing, 2017.

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36

Willardson, R. K., Theodore D. Moustakas, Eicke R. Weber e Jacques I. Pankove. Gallium-Nitride (GaN) II. Elsevier Science & Technology Books, 1998.

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37

Yu, HongYu, e Tianli Duan. Gallium Nitride Power Devices. Jenny Stanford Publishing, 2017.

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38

Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride. Storming Media, 2003.

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39

(Editor), Jacques I. Pankove, e Theodore D. Moustakas (Editor), eds. Gallium Nitride 1,2 (Semiconductors & Semimetals). Academic Press, 1999.

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40

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor. Storming Media, 2002.

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41

Medjdoub, Farid. Gallium Nitride: Physics, Devices, and Technology. Taylor & Francis Group, 2017.

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42

Medjdoub, Farid. Gallium Nitride: Physics, Devices, and Technology. Taylor & Francis Group, 2017.

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43

Gallium Nitride: Physics, Devices, and Technology. Taylor & Francis Group, 2015.

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44

Tadjer, Marko, e Travis J. Anderson. Thermal Management of Gallium Nitride Electronics. Elsevier Science & Technology, 2022.

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45

Medjdoub, Farid. Gallium Nitride: Physics, Devices, and Technology. Taylor & Francis Group, 2017.

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46

Medjdoub, Farid. Gallium Nitride: Physics, Devices, and Technology. Taylor & Francis Group, 2017.

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47

Thermal Management of Gallium Nitride Electronics. Elsevier, 2022. http://dx.doi.org/10.1016/c2019-0-01758-x.

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48

Technology of gallium nitride crystal growth. Heidelberg: Springer, 2010.

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49

Morkoç, Hadis, Jen-Inn Chyi e Yasushi Nanishi. Gallium Nitride Materials and Devices IX. SPIE, 2014.

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50

Tadjer, Marko, e Travis J. Anderson. Thermal Management of Gallium Nitride Electronics. Elsevier Science & Technology, 2021.

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