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1
Porada, O. K., A. O. Kozak, V. I. Ivashchenko, S. M. Dub, Олександр Дмитрович Погребняк, Александр Дмитриевич Погребняк e Oleksandr Dmytrovych Pohrebniak. "Hard Si-C-N Chemical Vapor Deposited Films". Thesis, Sumy State University, 2015. http://essuir.sumdu.edu.ua/handle/123456789/42711.
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Si-C-N thin films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as the main precursor. An influence of substrate temperature (TS) on film properties was analyzed. It was established that the deposited films were x-ray amorphous. The growth of the films slows down with increasing substrate temperature. The distribution of Si–C, Si–N and
C–N bonds were almost independent of TS, whereas the number of С–Н, Si–H and N–H bonds essentially decreased when substrate temperature increased. The nanohardness and elastic modulus increased with TS due to a reduction of the weak hydrogen bonds.
2
Bragg, Donald. "Photocatalytic Oxidation of Carbon Monoxide Using Sputter Deposited Molybdenum Oxide Thin Films on a Silicon Dioxide Substrate". Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/BraggD2007.pdf.
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Manoochehrnia, Pooyan. "Characterisatiοn οf viscοelastic films οn substrate by acοustic micrοscοpy. Direct and inverse prοblems". Electronic Thesis or Diss., Normandie, 2024. http://www.theses.fr/2024NORMLH38.
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Dans le cadre de cette thèse de doctorat, la caractérisation des films épais et minces déposés sur un substrat a été réalisée à l'aide de la microscopie acoustique via des algorithmes de résolution de problèmes directs et inverses. La méthode de Strohm est utilisée pour la résolution directe des problèmes, tandis qu'une variété de modèles mathématiques comprenant le modèle de la série de Debye (DSM), le modèle de la ligne de transmission (TLM) et la méthode spectrale utilisant le modèle de la rapport entre les réflexions multiples (MRM) ont été utilisés pour résoudre les problèmes inverses. Une application spécifique de la microscopie acoustique a été utilisée, consistant à monter des transducteurs à ondes planes à haute fréquence (50 MHz et 200 MHz) au lieu d'utiliser les transducteurs à focalisation traditionnels utilisés pour l'imagerie acoustique, ainsi qu'à utiliser le A-Scan à ondes complètes, qui pourrait être étendu à l'analyse en vrac des A-Scan consécutifs. Les modèles ont été validés expérimentalement par un film épais en époxy-résine d'une épaisseur d'environ 100μm et un film mince en vernis d'environ 8μm. Les paramètres caractérisés comprennent des paramètres mécaniques (par exemple la densité et l'épaisseur) ainsi que des paramètres viscoélastiques (par exemple la vitesse longitudinale acoustique et l'atténuation acoustique) et parfois le déphasage du transducteurIn the framework of this PhD thesis, the characterisation of the thick and thin films deposited on asubstrate has been done using acoustic microscopy via direct and inverse problem-solving algorithms.Namely the Strohm’s method is used for direct problem-solving while a variety of mathematical modelsincluding Debye series model (DSM), transmission line model (TLM) and spectral method using ratiobetween multiple reflections model (MRM) have been used to solve inverse-problem. A specificapplication of acoustic microscopy has been used consisting of mounting the plane-wave high frequency(50 MHz and 200MHz) transducers instead of use of the traditional focus transducers used for acousticimaging as well as using full-wave A-scan which could be well extended to bulk analysis of consecutivescans. Models have been validated experimentally by a thick film made of epoxy-resin with thicknessof about 100μm and a thin film made of polish of about 8μm. The characterised parameters includemechanical parameters (e.g. density and thickness) as well as viscoelastic parameters (e.g. acousticlongitudinal velocity and acoustic attenuation) and occasionally transducer phase-shift
4
Schlebrowski, Torben [Verfasser], Christian B. [Akademischer Betreuer] Fischer, Stefan [Akademischer Betreuer] Wehner, Christian B. [Gutachter] Fischer e Barbara [Gutachter] Hahn. "Plasma deposited thin layers of amorphous hydrogenated carbon (a-C:H) on selected biodegradable polymer films - Layer thickness and substrate dependent carbon hybridisation and its effect on layer stability / Torben Schlebrowski ; Gutachter: Christian B. Fischer, Barbara Hahn ; Christian B. Fischer, Stefan Wehner". Koblenz, 2020. http://d-nb.info/1213726859/34.
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Butterfield, Martin Thomas. "Surface structure of ultrathin metal films deposited on copper single crystals". Thesis, Loughborough University, 2000. https://dspace.lboro.ac.uk/2134/33132.
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Ultrathin films of Cobalt, Iron and Manganese have been thennally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural teclmiques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials with novel physical and magnetic properties, and hence new technological applications. Both Cobalt and Iron have been found to initially maintain a registry with the fee Cu (111) surface in a manner consistent with pseudomorphic growth. This growth is complicated by island rather than layer-by-layer growth in the initials stages of the film. In both cases a change in the structure of the film seems to occur at a point where the coalescence of islands in the film may be expected to occur. When the film does change structure they do not form a perfect over-layer with the structure of their bulk counterpart. The films do contain a number of features representative of the bulk phase but also contain considerable disorder and possibly remnants of fcc (111) structure. The order present in these films can be greatly improved by annealing. Manganese appears to grow with an fee Mn (111) lattice spacing and there is no sign of a change in structure in films of up to 4.61 ML thick. The gradual deposition and annealing of a film to 300°C, with a total deposition time the same as that for a 1 ML thick film, causes a surface reconstruction to occur that is apparent in a R30° (√3×√3) LEED pattern. This is attributed to the formation of a surface alloy, which is also supported by the local expansion of the Cu lattice in the (111) direction.
6
Munns, Clifford B. "X-ray diffraction studies of evaporated gold thin films deposited on aluminum nitride substrates". Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1994. http://handle.dtic.mil/100.2/ADA280454.
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Taddeo, Fernando. "Caracterização de filme vítreo, sinterizado com diferentes ciclos térmicos, depositado sobre substrato de Y-TZP e sua resistência de união imediata e após termociclagem a cimentos resinosos". Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/23/23140/tde-16122013-193112/.
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A zircônia estabilizada por ítria (Y-TZP) apresenta excelentes propriedades mecânicas; entretanto, sua microestrutura cristalina inerte faz com que tratamentos aplicados em porcelanas e vitrocerâmicas, como condicionamento com ácido fluorídrico e aplicação de compostos silânicos, sejam ineficazes para obter união aos cimentos resinosos. Neste trabalho, propõe-se uma alternativa para aumentar a reatividade da Y-TZP a cimentos resinosos por meio de um processo de modificação da superfície através da deposição de um filme vítreo. O objetivo deste estudo é, portanto, caracterizar um filme vítreo, sinterizado com diferentes ciclos térmicos, após deposição sobre Y-TZP (YZ 20/19, VITA Blocks Zahnfabrik, Bad Saackingen, Germany) e avaliar a resistência de união imediata e após ciclagem térmica (10.000 ciclos 5 e 55°C) a dois cimentos resinosos (Relyx Arc, 3M/ESPE, St. Paul, MN, USA e Rely-X U200 3M/ESPE, Neuss, Germany). A caracterização do filme foi efetuada por meio de microscopia eletrônica de varredura, para avaliar a morfologia; EDS (Espectroscopia por dispersão de energia), para estabelecer uma análise qualitativa e semi-quantitativa dos elementos químicos presentes e mensuração do ângulo de contato. Foram propostas as seguintes condições experimentais na superfície da YTZP: deposição dos filmes sinterizados à 700°C, 900°C ou ciclo de sinterização para o auto glaze; aplicação do primer contendo MDP (Alloy Primer, Kuraray Medical Inc, Kurashiki, Okayama, Japan); e silicatização da superfície (sistema Rocatec Soft, 3M/ESPE, St. Paul, MN, USA). Após o ensaio mecânico, o padrão de fratura foi avaliado por meio de microscopia óptica. Para os dados obtidos, o traço de Pillai (p = 0,00) mostrou que o tipo de tratamento empregado tem um efeito significativo sobre a resistência de união. Para determinar a diferença entre os grupos estudados foi aplicado um teste de comparações múltiplas (Tukey). O filme 900 apresentou maior resistência de união imediata (42,2 MPa), sendo este valor estatisticamente superior a silicatização (35,5 MPa) e MDP (28,0 MPa). Os resultados obtidos após termociclagem, mostram que o filme 900 novamente apresentou maior resistência de união (36,8 MPa) e também foi estatisticamente superior ao MDP (16,1 MPa) e silicatização (27,3MPa). A análise em microscópio estereoscópico demonstrou um padrão de fratura predominantemente coesiva na resina para microtração imediata para os grupos com deposição do filme vítreo e silicatizados. Para o MDP, o padrão de fratura foi, na sua maioria, do tipo mista. O ângulo de contato medido imediatamente após os tratamentos de superfície apresentou-se menor para os grupos com filme e silicatização e manteve-se com baixos valores somente para os grupos com filme após limpeza com álcool absoluto. A análise por EDS das superfícies dos filmes indicou a presença de silício nos diversos pontos analisados. Concluiu-se, deste modo, que a deposição do filme vítreo mostrou-se como um meio eficiente para promover uma forte e durável união com da Y-TZP com os cimentos resinosos, independente da temperatura de sinterização utilizada.The yttria stabilized zirconia (Y- TZP) has excellent mechanical properties, however its inert crystalline microstructure makes treatments applied in porcelain and glass ceramics, such as hydrofluoric acid etching and application of silane compounds, are ineffective for the union resin cements. In this work, we propose an alternative to increase the reactivity of the Y- TZP resin cement by a process of surface modification by depositing a glass film. The aim of this study is therefore to characterize a glass film, sintered with different thermal cycles, after deposition on Y- TZP (YZ - 20/19, VITA Blocks Zahnfabrik, Bad Saackingen, Germany) and to evaluate the bond strength immediately after thermocycling (10.000 cycles 5 and 55°C) to two resin cements (Relyx Arc, 3M/ESPE, St. Paul, MN, USA and Rely - X U200 3M/ESPE, Neuss, Germany). The characterization of the glass film was performed by means of scanning electron microscopy to assess the morphology, EDS (Energy Dispersive Spectroscopy), to establish a qualitative and semi-quantitative chemical elements and measuring the contact angle. Been proposed the following experimental conditions on the surface of YTZP: deposition of films sintering at 700°C, 900°C or sintering cycle for VM9 self glaze; primer containing MDP (Alloy Primer, Kuraray Medical Inc., Okayama, Okayama, Japan) and silica coating surface (Rocatec Soft, 3M/ESPE, St. Paul, MN, USA) . After mechanical testing, the fracture pattern was evaluated by light microscopy. For data, the trace of Pillai (p = 0.00) showed that the type of treatment used has a significant effect on the bond strength. To determine the difference between groups was applied multiple comparison test (Tukey). The 900 film showed higher bond strength immediately (42.2 MPa), and this value was statistically superior to silica coat (35.5 MPa) and MDP (28.0 MPa). The results obtained after thermocycling, show that 900 film again showed highest bond strength (36.8 MPa) and was also statistically superior to MDP (16.1 MPa) and silica coating (27.3 MPa). The analysis in stereoscopic microscopes showed a pattern of predominantly cohesive fracture in the resin for immediate microtensile for groups with film deposition and silica coat. In the MDP, the fracture pattern was mostly of the mixed type. The contact angle measured immediately after the surface treatments was lower for groups with film and silica coat and remained with low values only for groups with film after cleaning with absolute alcohol. Analysis by EDS surfaces of the films indicated the presence of silicon at the various points analyzed. It was concluded therefore that the glass film deposition proved to be an efficient way to promote a strong and durable bond with Y- TZP with resin cements, regardless of sintering temperature used.
8
Stefanik, Todd Stanley 1973. "The effect of oxygen partial pressure on the epitaxy of cerium oxide films deposited on nickel substrates". Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/47650.
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Gan, Feng Yuan 1967. "Thin film transistors with chemically deposited active channels". Thesis, McGill University, 2001. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=38192.
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Using CdSe and CdS thin films as an active layer prepared by chemical bath deposition method (CBD), thin film transistors (TFT) have been fabricated and studied. There are two fabrication processes developed in this work for TFTs dependent on the substrates used. A procedure for the fabrication of TFTs on Si substrates and a procedure for devices on glass substrates will be presented. Both procedures are designed for the fabrication of TFTs with an inverted gate-staggered electrode configuration. The chemical bath deposition process developed has yielded CdSe-TFTs and CdS-TFTs on thermally grown oxide/Si substrate with very good performance. Typical values of mobility for those TFTs are about 10 cm2/V-s for CdSe-TFTs and 1 Cm 2/V-s for CdS-TFTs with W = 200 mum and L = 20 mum. The ON-current values of the CdSe-TFTs and CdS-TFTs at a gate bias of 10 V and a source-drain voltage of 10 V are about 100 muA and 5 muA, respectively. The OFF-current values of the CdSe-TFTs and CdS-TFTs at the source-drain voltage of 10 V are less than 10 pA.The incorporation of the thermal oxidation process for the fabrication of TFTs described in the first procedure is useful for studying the properties and deposition of active semiconductor layers. However, it may not be suitable for large-scale production due to the high temperatures involved and the thermal requirements of the substrate. To reduce the process temperatures and the requirements for substrates, it is necessary to employ methods other than thermal oxidation for gate oxides. In this work, in addition to thermal oxidation, the anodization method will be used to form gate oxides for the second fabrication procedure on glass substrate. In addition, some samples were prepared with thin gate dielectric films by magnetron-sputtering method. The effects of anodization conditions on the quality of the anodic dielectric were investigated by measuring the breakdown electric field and leakage current density of the metal-insulator-metal (MIM) capacitors fabricated.
Results of electrical measurements carried out on the CdSe-TFTs with A12O3 and Ta2O5 gate dielectrics showed field effect mobilities of 3.4 and 0.67 cm2/V-s and threshold voltages of 3.2 V and 8.2 V, respectively. Field effect mobilities of 0.2 and 2 cm2/V-s and threshold voltages of 4.3 and 5.2 V were observed for CdS-TFTs, again with Al2O3 and Ta 2O5 gate dielectrics. (Abstract shortened by UMI.)
10
Poulter, Neil. "Novel antimicrobial plasma deposited films". Thesis, University of Bath, 2010. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.518294.
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Bacterial infection is a growing concern in hospital and community settings, where the issue of biofilms is a major problem. Most current methods of preventing microbial attachment and biofilm formation are limited due to application, process or inherent flaws. It was proposed that thin films containing an organometallic element could be deposited using plasma, a quick, clean surface modification technique; to create antimicrobial films which could then be applied to a range of substrates. Several novel antimicrobial monomer systems were synthesised and characterised based on silver, copper and zinc as the active constituent with phosphines, phosphites, maleimide and a novel Schiff base among the ligand systems. All monomers were found to greatly inhibit the growth of P. aeruginosa and S. aureus in solution and on solid media. Successful monomers were deposited onto suitable substrates (glass, gold, plastics, non-woven polypropylene) using continuous wave and pulse plasma, with the films characterised and low levels of active metal found in analysis using XPS and SIMS. Films were tested against solutions of pathogenic bacteria using a number of traditional and modern microbiological techniques and found to inhibit growth under a range of conditions, potentially due to the synergistic action of metal and ligand on bacterial cells. Effective control of bacteria was exhibited at times varying from 1h to 24h+. Highly volatile compounds were produced which allowed quick deposition of plasma films, which showed excellent activity against bacteria (99.9%+ growth reduction), indicating viability for potential application. All films tested showed no inhibition or toxicity to eukaryotic cells.
11
Bexell, Ulf. "Surface Characterisation Using ToF-SIMS, AES and XPS of Silane Films and Organic Coatings Deposited on Metal Substrates". Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributr], 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-3438.
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Kumar, Vishwanath. "Characterization Of Large Area Cadmium Telluride Films And Solar Cells Deposited On Moving Substrates By Close Spaced Sublimation". [Tampa, Fla.] : University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000218.
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Chen, Chien-Ting, e 陳建廷. "Study of Ga-doped ZnO thin film deposited on flexible substrate". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/8t95ch.
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碩士義守大學
電子工程學系
106
In this study, the photoelectric characteristics of gallium-doped zinc oxide(GZO) thin film deposited on flexble substrate was improved by adjusting the thickness of buffer layer and cover layer, different gas flow and intermittent process. At first, quantity of different oxygen as 0.6, 0.8, 1.0, 1.2 sccm is designed and fixed 80 nm GZO thickness. Then differernt thcikness of buffer layer as 60, 80, 100, 120 nm and cover layer as 20, 40, 60, 80nm had been grown, the intermittent time (IT) between buffer and cover layer is fixed as 7.5 min, and then is designed as 2.5, 5.0, 7.5, 10 min. Finally, the different nitrogen as 0.4, 0.8, 1.2 sccm were used to improve thin film. The resistivity and transmittance were measured by Hall-effect measurement and UV-VIS Spectrophotometer, the optimun figure of merit is calculated. The crystallographic, microstructures and suface roughness were analyzed by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM).The results shown that the optimum parameter is 100 nm buffer layer and 60 nm cover layer with the quantity of 0.8 sccm oxygen and 0.8 sccm nitrogen, and IT is 5 minutes. The resistivity reduces from 4.12x10-1 to 1.72x10-2 Ω-cm, the average transmittance in visible region increased to 93.61%, the optimum figure of merit is 4.81x10-4 Ω-1. GZO thin film grown on flexible substrate is verified to be improved by optimum design and also has potential to apply on soft electronic devices.
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Wang, Jyun-Jie, e 王俊杰. "Flexibility Properties of A Transparent Conductive Film Deposited on The Plastic Substrate". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/ywwq3w.
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碩士國立虎尾科技大學
光電與材料科技研究所
101
In this study, Indium Tin Oxide(ITO), Indium Tin Oxide-doped Zinc Oxide(ITO-ZnO) and Aluminum-doped Zinc Oxide(Al-ZnO) transparent conductive films prepared using RF magnetron co-sputtering system deposited onto the flexible plastic substrate and add the appropriate thickness of the buffer layer, an purpose to prepared with a low resistivity, low stress and superior adhesion of the film, using bending test instruments to explore reliability characteristics of film after different curvature and bending frequency. Firstly, thickness of 150nm Indium Tin Oxide film with tensile/compressive strain bending conditions, the critical curvature were 14.1/5.4mm, observe the surface morphologies, the film can endure great compressive strain by external force, the formation of cracks effect the critical crack curvature, after cycle bending test (bending radius of curvature greater than the critical crack curvature), resistance of Indium Tin Oxide film still have no significant change and adhesion can reach the standard value of 4B. Second, deposited organicsilicon film as a buffer layer between Indium Tin Oxide film and plastic substrate at the interface when the organic silicon film thickness of 60nm, the film of residual stress is reduced to -170 MPa, organic silicon and Indium Tin Oxide films structure to reach tensile / compressive stress interleaved stacks, the overall of film compressive stress substantial decline and effectively improve adhesion reach the standard value of 4B. Finally, Indium Tin Oxide, Indium Tin Oxide-doped Zinc Oxide and Aluminum-doped Zinc Oxide of transparent conductive films were analysis by X-ray Diffraction, we can found Indium Tin Oxide-doped Zinc Oxide film is an amorphous structure, but Indium Tin Oxide and Aluminum-doped Zinc Oxide films are poly-crystalline structure, amorphous structure do not have any grains and the external force is not easy for cracks to form, Therefore, Indium Tin Oxide-doped Zinc Oxide film has good bending reliability than Aluminum-doped Zinc Oxide and Indium Tin Oxide films.
15
Lin, Jun-Liang, e 林俊良. "TiN/Ti thin film on flexible PET substrate deposited by RF magnetron sputtering". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/91201195785348378561.
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Liu, Ming-Yueh, e 劉明岳. "Properties of diamond-like carbon film deposited on acrylic substrate and Si wafer". Thesis, 1999. http://ndltd.ncl.edu.tw/handle/22941020370047606203.
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碩士國立交通大學
材料科學與工程系
87
The purpose of this research was to deposit a protective diamond-like carbon (DLC) film on acrylic substrates for optical applications. To search for the important deposition parameters for RF sputtering and ion beam deposition systems, at first, the P-type (100) Si wafers were used to study the deposition processes. The ion beam deposition system, which was proved to be more suitable for this case, was then chosen to deposit DLC films on acrylic substrates. Effects of silicon resin and Si oxides as the interlayers were also studied. The deposited films were examined by AFM, Raman spectroscopy, microhardness and nano-indentation techniques, ESCA and dual beam spectrometry to evaluate their structures and properties. From the experimental results, the following conclusions can be drawn. For the cases of Si wafer substrates, the results show that the sp3/sp2 ratios of the RF sputtered DLC films were high and would increase as increasing the hydrogen flow rate. In contrast, the ion beam deposited films demonstrated a even higher sp3/sp2 ratio, less surface roughness (0.39nm), higher nano-indentation hardness (up to 13.50 GPa) and less deposition temperatures (<70℃). Therefore, the gridless ion beam deposition method is believed to be more suitable for the present purpose. For the cases of acrylic substrates, the results of the indentation adhesion testing show that the adhesion index, dP/dx, increases from 0.56gf/mm to 0.59gf/mm with SiO2 as the interlayer. It indicated that the SiO2 interlayer does enhance the film adhesion without greatly sacrificing optical transmittance of visible lights. The results also show that microhardness of the films increases as increasing the deposition time, and can go up to 2.70 GPa at the deposition time of 7.5 min. In other words, the ion beam deposited films can rise the microhardness of the substrate more than ten times, and greatly improve their wear resistance. However, it was found that a higher hardness of the films is accompanied by a rougher surface. In consequence, the transmittance of the visible lights can deteriorate to 67~89% by increasing the surface roughness from 2.18 nm to 2.23 nm. This implies that the surface roughness is one of the major factor affecting the optical transmittance. In other words, the best deposition conditions for a protective DLC film on acrylic substrates for optical applications depend on the compromise between the desired wear resistance and optical transmittance.
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Wan-YiYe e 葉宛宜. "Flexible IGZO thin-film transistor deposited on PET substrate using wet etching method". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/45829652096561623846.
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Tang, Shih-Chieh, e 湯士杰. "Measument of Thin Film Stress in Deposited Sapphire Substrate Using Twyman-Green Interferometer". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/36745813021894171181.
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碩士國立交通大學
機械工程學系
100
In the epitaxial process of gallium nitride (GaN) deposition on a sapphire wafer, the large residual stress usually results in wafer bowing because of lattice and thermal misfit between both thin film and substrate. The residual stress comprises of intrinsic stress and thermal stress. The Stoney stress formula for wafer bowing was amended, and the residual stresses in the thin film are modeled as biaxial forces acting at the sapphire substrate which is an anisotropic material. In this study, Twyman-Green interferometer was used to measure the surface topography of GaN deposited sapphire substrate. After reduction of interferogram noise by the morphology image process, the image thinning algorithm was used to locate the center of interference fringes. The Zernike polynomials were employed to describe a wave front of sapphire substrate by surface fitting. The residual stress was determined according to the curvatures calculated by finite differences of those surface fitting data of the measured topography.
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Chih-weiHuang e 黃致崴. "The study of SiOx thin-film deposited on optical plastic substrate by atmospheric plasma". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/30289655866436262001.
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碩士國立成功大學
化學工程學系碩博士班
101
This study established a set of continuous atmospheric pressure plasma system, treating surface for optical plastic substrate .The atmospheric plasma surface treatment is an economic and efficient method for low temperature surface treatment. Compared with the low-pressure plasma treatment, the atmospheric plasma chemical vapor deposition owns many advantages including atmospheric operation, in-line operation, no vacuum equipment needed, good compatibility with other processes, low equipment ,operation and maintenance cost, and high throughputs. In this experiment, HMDSO is a SiOx thin-film precursor which is deposed on optical plastic PC, PMMA substrate by PECVD. The study focus on two aspects, one is to study factors which affect the film and substrate adhesion; the second is to explore the impact of operation process on the chemical composition of the film. In this study, by controlling the coating parameters (Carrier gas flow, Scan speed, distance coated, coating time) and using different fabrication processes which modulating the thickness of SiOx films, various types of film with different surface properties and chemical composition are obtained. The surface can be highly hydrophilic (water contact angle of less than 5 degrees) or ultra-high anti-adhesion properties (water contact angle greater than 100 degrees). This experiment has been successfully deposited SiOx films of good adhesion on the PC substrate, and after modifying by hydrophobic process, it can withstand abrasion test up to 3000 times.
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Chang, Ping-kuan, e 張評款. "The Study of BZT Thin Film Deposited on ITO Substrate by RF Magnetron Sputtering". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/63398095514544935756.
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碩士國立中山大學
電機工程學系研究所
94
In this study, the reactive rf magnetron sputtering was used to deposit Ba(Zr0.1,Ti0.9)O3 (BZT) ferroelectric thin films on ITO/Glass substrate, and MFM structure was fabricated. The effects of various sputtering parameters on the characteristics of thin films, such as the oxygen concentrations, substrate temperature, rf power and chamber pressure were discussed, and then the optimal sputtering parameters were determined. The annealing process of rapid thermal annealing (RTA) and conventional thermal annealing (CTA) were used to promote the ferroelectric characteristics. The physical characteristics of BZT thin films were obtained by the analyses of SEM, XRD patterns and AFM morphologies. The surfaces, cross-section, crystallization and surface roughness of thin films were discussed. To investigate the electrical properties, the capacitance-voltage (C-V), current-voltage (I-V) and P-E hysteresis characteristics of BZT thin films were measured by the HP4284A impedance analyzer, HP4156C semiconductor parameter analyzer and computerized radiant technology (RT66), respectively. Furthermore, characteristics of the MFM structure were discussed. From the experimental results, the dielectric constant with optimal sputtering parameters was about 84, and the leakage current of thin film was about 6 × 10-8 A/cm2 when the applied electrical field of thin film was at 0.4 MV/cm. The remanent polarization (Pr) and coercive field (Ec) were 2.87 μC/cm2 and 259 kV/cm from the P-E hysteresis loops, respectively. In addition, the ferroelectric characteristics of the thin film could be improved after rapid thermal annealing at 550℃ for 3 minutes. The remanent polarization (Pr), coercive field (Ec) and saturated polarization (Ps) were 3.42 μC/cm2, 266 kV/cm and 6.99 μC/cm2, respectively.
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Rahman, Khalifa Mohammad Azizur. "Nanocrystalline Silicon Solar Cells Deposited via Pulsed PECVD at 150°C Substrate Temperature". Thesis, 2010. http://hdl.handle.net/10012/5446.
Texto completo da fonteResumo:
A series of experiments was carried out to compare the structural and electronic properties of intrinsic nanocrystalline silicon (nc-Si:H) thin films deposited via continuous wave (cw) and pulsed (p)-PECVD at 150°C substrate temperature. Working at this temperature allows for the easy transfer of film recipes from glass to plastic substrates in the future. During the p-PECVD process the pulsing frequency was varied from 0.2 to 50 kHz at 50% duty cycle. Approximately 15% drop in the deposition rate was observed for the samples fabricated in p-PECVD compared to cw-PECVD. The optimum crystallinity and photo (σph) and dark conductivity (σD) were observed at 5 kHz pulsing frequency, with ~10% rise in crystallinity and about twofold rise in the σph and σD compared to cw-PECVD.
However, for both the cw and p-PECVD nc-Si:H films, the observed σph and σD were one to two orders and three orders of magnitude higher respectively than those reported in literature. The average activation energy (EA) of 0.16 ∓ 0.01 eV for nc-Si:H films deposited using p-PECVD confirmed the presence of impurities, which led to the observation of the unusually high conductivity values. It was considered that the films were contaminated by the impurity atoms after they were exposed to air.
Following the thin film characterization procedure, the optimized nc-Si:H film recipes, from cw and p-PECVD, were used to fabricate the absorber layer of thin film solar cells. The cells were then characterized for J-V and External Quantum Efficiency (EQE) parameters. The cell active layer fabricated from p-PECVD demonstrated higher power conversion efficiency (η) and a maximum EQE of 1.7 ∓ 0.06 % and 54.3% respectively, compared to 1.00 ∓ 0.04 % and 48.6% respectively for cw-PECVD. However, the observed η and EQE of both the cells were lower than a reported nc-Si:H cell fabricated via p-PECVD with similar absorber layer thickness.
This was due to the poor Short-circuit Current Density (Jsc), Open-circuit Voltage (Voc), and Fill Factor (FF) of the cw and p-PECVD cells respectively, compared to the reported cell. The low Jsc resulted from the poor photocarrier collection at longer and shorter wavelengths and high series resistance (Rseries). On the other hand, the low Voc stemmed from the low shunt resistance (Rsh). It was inferred that the decrease in the Rsh occurred due to the inadequate electrical isolation of the individual cells and the contact between the n – layer and the front TCO contact at the edge of the p-i-n deposition area. Additionally, the net effect of the high Rseries and the low Rsh led to a decrease in the FF of the cells.
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TsaiCheng-Chung e 蔡政忠. "The Study of Morphology and Adhesive of Glass Substrate Deposited with Transparent Conductive Thin Film". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/07428680194000205083.
Texto completo da fonteResumo:
碩士崑山科技大學
機械工程研究所
93
This study analyzes some morphological and mechanical properties of Eagle 2000 glass produced by Corning Co. Ltd. deposited with transparent conductive this film of antinomy doped tin oxide (ATO) under the variations of substrate temperature and oxygen flow rate during sputtering. The surface morphology before and after ATO film sputtering and annealing are measured and used to calculate the surface roughness,warpage and residual stress of the surface during each manufacturing procedure. The elastic modulus and hardness of ATO are tested by the nanoindentation test. The adhesion of the ATO film is tested under different loading ratesand sliding speeds through nano-scratch tests. The results show that the adhesive strength decreases with the inerease of oxygen flow rate under the same substrate temperature, but the adhesive strength increases with the increase of substrate temperature under the same oxygen flow rate. Besides, the maximum surface roughness(or called surface warpage) increases with the increase of oxygen flow rate.
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Yeh, Chih-Chieh, e 葉志傑. "Pentacene-Based Organic Thin Film Transistors on Plastic Substrate Coated with Liquid Phase Deposited SiO2". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/95797696128589352810.
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碩士國立成功大學
光電科學與工程研究所
94
This thesis includes two parts. The first part deals with the oxide layer coating on the PES substrate for the enhancement of adhesion, optical transmittance, and water vapor impermeability. The liquid phase deposition method to grow the silicon dioxide interlayer on the plastic substrates with the O2/Ar plasma pre-treatment is investigated. It is found that the ratio of COO (288.9eV) to CH2 (284.5eV) has increased with the O2/Ar plasma pre-treatment by the X-ray photoelectron spectroscopy measurement. After which, the quality of LPD-SiO2 films on the substrates with or without the plasma pre-treatment is examined by using scanning electron microscopy, etching rate of the oxide layer by the diluted HF solution, and surface leakage current measurement. In the second part, we show the organic thin film fabrication. The optimal thickness of pentacene is found to be about 67 nm. A smaller injection barrier can be obtained by using Pt as a drain and source contact electrode. In order to reduce one mask process of the AM-OLED device, we use ITO as the gate metal instead of Al. However, from the transfer characteristic, the worse hysteresis effect can be observed. A thin LiF layer is deposited onto the ITO surface to reduce ITO surface work function. After that, the ratio for off state current can be reduced about two orders.
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Chou, Chen-Chi, e 周建吉. "A Study of Transparent Conductive Film on the Flexible Substrate Deposited by DC-Magnetron Sputtering". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/f3qvz8.
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碩士國立臺北科技大學
電機工程系所
93
This study focused on the use of DC magnetic sputtering on flexible substrate (PC) for plating transparent conductive film (ITO), and modified the production parameters to discuss the relationship to parameters to film structure and photoelectric characteristics. Although glass substrate is widely used by the photoelectric and semiconductor industries, as the future products will have features of compact, flexibility, and durability, plastic substrate with such features will be the mainstream. Plastic substrate has advantages, but is still incomparable to glass substrate in terms of heat resistance and heat expansion; the head expansion coefficient of plastic substrate (70.2×10-6 cm/cm/C ) and ITO (7.2×10-6 cm/cm/C ) will lead to problem of heat stress on film, and result in break of ITO film during sputtering. The weakness in heat resistance will cause poor conductivity, and even deformation in the high temperature processing. Concerning the abovementioned weakness of the plastic substrate, this study used two types of substrates, conventional PC and PC with hardened coating, which intends to bring the heat expansion coefficients of the ITO and substrate to reduce the heat stress. The results showed that substrate with hardened coating has solved the problem of heat stress. Also, since this study was conducted in low temperature environment, the results of X-ray diffraction analysis showed that the sputtered film was noncrystalline, though with inferior photoelectric characteristics to crystalline, it is more efficient in the etching processing. The four-probe and spectrum test on the photoelectric characteristics showed that the optimal resistance is 7.652×10-4 Ω-cm, and light transmission is above 85 %.
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Lai, Jhe-Wei, e 賴哲瑋. "Study of Al-doped ZnO thin film with CuO nano-wires deposited on flexible substrate". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/x3kwyc.
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Lin, Yung-Hsin, e 林永鑫. "Characteristics of Amorphous Thin Film of Titanium Oxynitride Deposited on Quartz Substrate by Ion Beam Sputtering". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/94228948867363646096.
Texto completo da fonteResumo:
博士輔仁大學
應用科學與工程研究所博士班
99
Titanium oxynitride films were deposited by ion beam sputtering system using two methods: The argon ion beam was used to sputter the titanium under three gas mixtures: NH3/O2, N2/O2, and NH3/O2 in the first method.The O2 was ambient gas when the nitrogen ion source was used during the film deposition in the other method. The optical properties, surface smoothness, crystalline structures, chemical bonding, and energy band-gaps of the films were all characterized by ellipsometer, AFM, XRD, and XPS. The energy band-gaps of the titanium oxynitride films were calculated by using data obtained from ellipsometer and Tauc-Lorentz model. The purpose of this work is to establish a data base of the titanium oxynitride films deposited by two different methods. Moreover, the unsettled issues of N1s chemical bonds and energy band-gaps of the films are addressed and discussed. The film structure measured by XRD indicates that most films deposited by two different methods are amorphous. Only when the nitrogen atom to oxygen atom ratio is low without hydrogen used the films are amorphous. Six oxidation states of N1s, N3-, N2-, N1-, N1+,N2+ and N3+, were resolved from the XPS studies. Complicated or randomly oriented chemical bonds in the films indicate the crystalline structure become amorphous. The refractive indices remain the same in the films deposited by the first method but reduce in the films deposited by using the nitrogen ion source. Smoother surfaceswere observed in the films deposited by the first method but films deposited by the second method were rough. In fact, the relative concentration of N3- species was closely related to the energy gaps of the amorphous films calculated by using Tauc-Lorentz model to fit the parameters of Ψ and Δ obtained by ellipsometer. The energy band-gap decreases as the N3- concentration in the film increasing which provides a way to control the band-gap of titanium oxynitride film by adjusting the concentration of N3-. This also indicates that the more N3- species the smoother the film and the lower the band-gap In summary, films’ properties are clearly determined by the deposition method. Surface smoothness depends on the deposition method and concentration of N3-, crystalline or amorphous structure relates to the N/O ratio and hydrogen, energy band-gap is related to the concentration of N3-, and finally the complicated chemical bonds reveal six oxidation states of the nitrogen bonding in the films.
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Lin, Yu-Wei, e 林郁洧. "Effect of substrate bias on the structure and properties of nanocrystalline ZrN thin film deposited by". Thesis, 2003. http://ndltd.ncl.edu.tw/handle/88529911553609915837.
Texto completo da fonteResumo:
碩士國立清華大學
工程與系統科學系
91
Nanocrystalline ZrN films were deposited on Si substrates using an unbalanced magnetron (UBM) sputtering system. The effect of bias on the microstructure and properties of zirconium nitride (ZrN) film was investigated. A negative bias voltage ranging from —20 V to —130 V was applied to the substrate. Effects of substrate bias were related to the energy and momentum of the deposited particles. Deposited energy may enhance the mobility of the adatoms to stable site on the substrate surface, but arriving ions with high energy and momentum may induce radiation damage to the growing film and produce lattice defects. Thickness (100 nm ~ 450 nm), texture, roughness, packing factor, and resistivity are correlated to the momentum and the total energy delivery with different substrate bias. Hardness of ZrN films were ranging from 20~40 GPa. The hardness increases with increasing packing factor. Nanocrystalline structures of ZrN thin film indicate that strength of hardness is due to grain boundary strength. The packing factors of ZrN films were obtained by Rutherford backscattering spectrometer (RBS), and the N/Zr ratio also can be calculated. Resistivity decreases from -20V to -90V and then increases from -90V to -130 V. Residual stress which is correlated to the momentum is ranging from -2~-13 GPa.
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Kuo, Yen-ching, e 郭燕靜. "Silicon Thin Films Deposited on Self-Assembled Monolayer Modified Quartz Substrate". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/59837196313713693994.
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碩士國立臺灣科技大學
化學工程系
102
This research is focused on the silicon thin film deposited on the self-assembled monolayer (SAM) modified quartz substrate by the physics vapor deposition system. Furthermore, using the solid phase crystallization (SPC) method to make the amorphous silicon film transform into the poly-silicon film. Finally, the properties of silicon films on pristine and SAM-modified substrates such as the degree of crystallization and surface morphology were characterized by scanning electron microscope (SEM), Raman spectroscopy, and X-ray diffraction (XRD). First, we deposited the silicon on the non-modified quartz substrate to get the optimization parameter. Afterward, the amorphous silicon film was annealed, the structure of silicon transformed from amorphous phase into poly crystalline, getting the phase transformation temperature. We fabricated the SAMs to modify the quartz substrate to influence the crystalline of the silicon film. From the result, -CH3 SAM could improve the degree of crystallization.
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Chen, Chia-Wei, e 陳佳緯. "Fabrication of AlN Films Deposited on Al Substrate by Microwave Plasma". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/97673611134893326479.
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碩士龍華科技大學
工程技術研究所
101
In this study, the microwave plasma nitriding method will be carried out for the aluminum nitride surface treatment way to explore the formation and research. Research methods to change process parameters include base temperature, reaction gas ratio,microwave power to microwave plasma nitriding treatment. Analysis results base temperature 550℃, reaction gas ratio N2:H2=50:150sccm, microwave power 1000W to better nitridation reaction Finally, In this study, the best parameters are: microwave power 1000W, Reaction gas N2:H2=50:150sccm and base temperature 550℃to microwave plasma nitriding treatment, nitrided aluminum plate specimen analysis,the results showed that nitrogen ratio can be as high as 23.38% and a thickness of 15μm.
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Chen, Ting-You, e 陳廷祐. "The Opt-Electric properties of Ti:GZO thin film on flexible substrate under different annealing temperatures and deposited process". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/69632640000549011082.
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碩士國立高雄應用科技大學
機械與精密工程研究所
102
This study utilizes DC magnetron sputtering to deposit GZO transparent conductive films and Ti thin films on the same PI(polyimide) flexible substrates, then treats GZO/Ti thin films to conduct different anneal temperatures and times with rapid thermal annealing. Making Ti atoms evenly diffuse and deposit to GZO thin films. Finally, it investigates the characteristics of the annealing process with Ti: GZO thin film.Furthermore,it also investigates the annealing temperature effect influence on the resistivity、optical and surface properties of Ti/GZO transparent conductive film. The results show that the Ti:GZO film on sputtering power 60W and annealing temperature at 290°C has lowest electrical resistivity (about 1.4203x10-3Ω-cm). However, the nano-mechanic properties of the annealing Ti:GZO thin film also maintains the same strength with the unannealing TiGZO thin film.
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Lai, Meng-Cheng, e 賴孟誠. "Graded Band-gap TiO2 Thin Film Solar Cell Deposited by High Power Impulse Magnetron Sputtering on Flexible Substrate". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/11259485392499335941.
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碩士逢甲大學
材料科學所
100
Among various type of thin film solar cells, the amorphous silicon type exhibits low and unstable conversion efficiency, compound solar cells, on the other hand, are with shortage of the rare metals and toxic metals usage, not to mention unacceptable high deposition temperature. For the purpose of overcoming these problems and applying low cost photovoltaic material, the titanium-based oxide material known as potential photovoltaic material was chosen to develop a novel thin film solar cell. During film deposition, oxygen flow rate was adjusted to obtain p-TiOx/n-TiO2 as p-n junction, where p-TiOx act as the absorption layer and n-TiO2 as the window layer. The accompanied discontinuity between p-TiOx/n-TiO2 interface may however unfavorable for electron-hole pairs separation and thus a decreased conversion efficiency. Therefore an attempt in this study is to develop a graded band gap n-TiO2 by progressive control of N2 flow rate. Meanwhile, a high power impulse magnetron sputtering (HIPIMS) technique was used to conduct film deposition. HIPIMS has been known to provide high density plasma favoring crystalline growth during deposition and hence a reduced substrate temperature. Ultimately, an effective flexible photovoltaic device composed of [PI/Ni(V)/p-TiOx/Graded band gap n-TiO2/IZO/Al] is expected to achieved. Preliminary, the plasma power supply was optimized to achieve the HIPIMS mode under a discharge voltage 800 V, pulse duty Ton/Toff = 150 μs/1100 μs and pulse frequency 800 Hz. The p-TiOx absorption layer obtained at oxygen/argon flow rate ratio 0.28 exhibits a higher degree of crystallinity and an enlarged grain size, leading to a designated electrical properties. The carrier mobility and electrical resistivity are 2.18 cm2/Vs and 8.45×10-4 纹-cm, respectively. The optical band gap of the absorption layer p-TiOx is about 2.27 eV. On the other hand, the n-TiO2 window layer slightly decreases its band gap energy from 3.20 eV to 3.18 eV when nitrogen flow rate increases from 0~50 sccm though, the increased external quantum efficiency and the associated better conversion efficiency is found (in comparison with the intrinsic n-TiO2 window layer). It is undoubtedly contributed by the graded energy gap structure. Ultimately, the assembled photovoltaic device of [PI/Ni(V)/p-TiOx/Graded band gap n-TiO2/IZO/Al] presents a external quantum efficiency of 45% under 310 nm monochromatic irradiation and a photovoltaic efficiency of 0.2 %.
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Chen, Rong-Chinq, e 陳榮慶. "Crystalline characteristic of vacuum-deposited Ge films as function of substrate conditions". Thesis, 1993. http://ndltd.ncl.edu.tw/handle/83865285288880779667.
Texto completo da fonteResumo:
碩士國立成功大學
化學工程研究所
81
The structure of Ge films grown by thermal vacuum evaporation has been approached as functions of the different substrates including Si(100)﹑Si(111)﹑GaAs(100) and fused silica, deposi- tion temperature as well as layer thickness by SEM (scanning electron microscopy),Raman scattering, X-ray diffraction and UV- Vis spectroscopy analysis. It is found the structure of Ge films is amorphous for layer thickness 1,000o and substrate temperature below 58℃, yet its crystalline quality strongly depends on the substrate temper- ature. The crystalline grains deposited in lower temperature main growth direction are Ge(111),Ge(220) and Ge(311) faces, but it is epitaxial growth at higher temperature. The epitaxial growth occurs on Si(100) and Si(111) substrates as substrates temperature gets to 250℃ and layer thickness reaches 2,500o. The transmisttance of Ge films is very poor at light wavelength below 600nm. In addition, the transmisttance of crystalline film is harder than amorphous one from 600nm to 1,100nm.
33
Chu, Cheng-Yen, e æ±æ¿å½¥. "Study of ZnO:Ga transparent conducting oxide thin films deposited on flexible substrate". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/94425086839801932381.
Texto completo da fonteResumo:
碩士龍華科技大學
工程技術研究所
95
In this study, conducting and transparent gallium doped zinc oxide (ZnO:Ga；97:3 wt %, GZO) thin films have been deposited on polyethylene terephthalate (PET) substrates by radio-frequency (R.F.) magnetron sputtering. Taguchi experimental design was used to clarify the influence of various deposition conditions on the electrical, structural, morphological and optical characteristics for the GZO film. The signal-to-noise (S/N) ratio and the analysis of variance (ANOVA) are employed to study the performance characteristics in coating operations. According to the experimental results, show that the electrical resistivity and transmittance decreased as R.F power increase. During the process of GZO films(for a thickness about 600nm),when the substrate and post-annealing temperature were raised, the lowest electrical resistivity and the highest transmittance in the visible range have been obtained. Furthermore, based on the grey relational analysis, the lowest electrical resistivity of GZO films is found to be about 8.627×10-4 Ω-cm, the transmittance in the visible range was about 90 %.
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FOO, YONG HAU, e 符永豪. "The Study of Inductively-Coupled-Plasma (ICP) Ion Plating Deposited Diamond-Like Carbon Film on Polymer and Silicon Substrate". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/18937914630352862271.
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Chen, Jian-Zhi, e 陳建智. "A Study of the Adhesion Improvement on a Thin Film Deposited on the PMMA Substrate Using Buffer-Layered Structure". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/y7g57r.
Texto completo da fonteResumo:
碩士國立虎尾科技大學
光電工程系光電與材料科技碩士班
104
This study will be used polymethyl methacrylate (acrylic) as the substrate, by plasma enhanced chemical vapor deposition system (PECVD), thermal evaporation system, RF magnetron co-sputtering system, and spray painting, testing and adhesion improvement on a functional thin film that include hard coatings thin film, reflection thin film, anti-Glare Coating and transparent conductive thin film. The results showed that when the functional thin film adhered to the acrylic substrate only 0B degree level, in order to improve the adhesion of the functional thin film on the acrylic substrate using PECVD deposition of the organic silicon thin film as a buffer layer for the purpose of enhancing the adhesion of the functional thin film between the acrylic substrate and to reduce the residual stress after the thin film deposition, the degree of adhesion level reaches 5B, then through the force of 100 mN flannel friction 1000 times, hydrochloric acid and brine environmental testing to explore the functional thin film for improving results under harsh environment stability. In order to analyze the reasons of the improvement on the thin film, and using a surface profiler measurement of curvature before and after the thin film deposition, and then calculate for residual stress via Stoney equation, when the residual stress is smaller the better adhesion of the thin film.Using Fourier transform infrared spectroscopy measure thin film chemical bonding, and analyze attachment relationship with the homogeneity of material.X-ray diffraction measure the crystallinity of the thin film, the thin film is attached to the analysis of the crystalline degree of influence.Measuring the contact angle that the thin film surface hydrophilic and hydrophobic, hydrophilic and hydrophobic for analysis of the impact on attachment.Measured using an atomic force microscope roughness of the thin film, analyze the relationship between roughness and adhesion.
36
TING, WEI-CHIEH, e 丁偉傑. "A Study of Lateral RRAMs Using ZnO Films Deposited at Different Substrate Temperatures". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/20742150104221915586.
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碩士國立雲林科技大學
電子工程系
104
In this work, resistive switching (RS) characteristics of ZnO films via lateral conducting filaments with a long length up to 250 μm were demonstrated. The ZnO films were deposited at a low radio frequency power of 50 W while the working pressures was maintained at 3 mtorr. We controlled the substrate temperature during the sputtering process to modify the crystallinity and oxygen vacancy concentration of the ZnO film. At low substrate temperatures of 25-160 °C, the ZnO resistive random access memories (ReRAMs) show high conduction currents and the RS behavior is absent. Optimal temperatures of 240-320 °C were found to be suitable for obtaining RS characteristics of the ZnO ReRAMs with electrode distances of 10-250 μm. A much higher temperature of 400 °C leads to an extremely low conduction current and the electrical characteristic cannot be measured. However, the carrier conduction mechanism of the ZnO ReRAM was also studied. The deposition rates, transmittances, energy bandgaps, crystallinities, grain sizes, grain orientations, and distinct RS characteristics of the ZnO films deposited at temperatures of 25-400 °C were investigated. The thicknesses of the deposited ZnO films were examined by using a field emission scanning electron microscope (SEM); The crystal orientations were characterized by using XRD; The optical transmittances were measured by an UV-vis spectroscopy in the wavelength range from 300 nm to 800 nm; The chemical bonding of the ZnO films were examined by the XPS; A Keysight B1500A semiconductor parameter analyzer was used to measure the current-voltage (I-V) characteristics of the planar ZnO ReRAMs.
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ZHANG, YANG-ZHENG, e 張楊正. "A Study on the Annealed ZnO Film Deposited onto the p-Si Substrate and its Application on the Heterojunction Diode". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/9z89mc.
Texto completo da fonteResumo:
碩士國立虎尾科技大學
光電工程系光電與材料科技碩士班
107
In this study, using radio frequency magnetron co-sputtering system, zinc oxide thin films and aluminum nitride-zinc oxide co-sputtering thin films were prepared by using zinc oxide and AlN targets respectively. Three structures, namely, undoped zinc oxide thin films and barrier layer AlN-zinc oxide thin films, were annealed at 700 degrees in different environments (nitrogen and oxygen). The confinement ability of the thin films was enhanced by adding double heterostructures of barrier layer AlN-ZnO thin films, and the confinement layer of aluminum nitride. Increasing the electron confinement ability can change the luminescent efficiency. Hall measurements and photoinduced fluorescence spectroscopy are used to understand the stacking characteristics of thin films. Oxygen can compensate for the effect of donor ions. The electrical properties show that the nitrogen ambient heat treatment has higher carrier concentration than oxygen. The double heterostructure substitutes for the position of zinc atoms due to the diffusion of aluminum atoms, in addition to inhibiting zinc oxide. The intrinsic defect increases the carrier concentration of the structure and improves the crystallinity of zinc oxide. When the confined layer of aluminum nitride is added, the excess aluminum atoms will diffuse into the active region. The excess aluminum atoms will bond with oxygen to form an insulating effect, which increases the resistivity of the structure and reduces the carrier concentration, resulting in poor crystallinity of zinc oxide. In this study, n-ZnO/p-Si, DH/p-Si and DH/AlN/p-Si heterojunction dipoles are fabricated on p-type silicon substrates. From the current-voltage characteristics, it can be found that when the conduction voltage of AlN-ZnO double heterojunction is 2.62V, the current ratio is 5.15, then the limiting layer of AlN is fabricated. The conduction voltage rises to 2.74V and the current ratio is 40.89. Both of them have good rectification characteristics. The effects of nitrogen heat treatment at different temperatures (700, 500 and 400 degrees) on undoped ZnO thin films, double heterostructures and double heterostructures with aluminum nitride confinement layer were further investigated. From the current-voltage characteristics, it was found that the series resistance and start-up voltage of the components decreased with the increase of nitrogen heat annealing temperature. The double heterostructures of AlN-ZnO thin films were electrically conductive at 400 degrees nitrogen. Voltage is 2.00V and current ratio is 9.13. When the temperature rises to 500 degrees, the on-line voltage drops to 1.88V and the current ratio is 10.45. When the temperature reaches 700 degrees, the lowest on-line voltage is 1.80V and the current ratio is 11.68.
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hui, Liao bo, e 廖博輝. "Multilayer transparent conductive films on plastic substrate deposited by Self-made DC-magnetron sputtering". Thesis, 2003. http://ndltd.ncl.edu.tw/handle/32550101269372911865.
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碩士輔仁大學
物理學系
91
Abstract This text improves the known transparent conductive optical design （ITO/Ag/ITO/SiO2）and we use the computer program (Essential Macleod) to better its conductivity and transmittance. First we use the self-made DC-sputters and DC-power supply to deposit the single layer of TiO2, Ag and ITO. Then we measure its thickness and refractive index . Finally we sputter TiO2, Ag and ITO in sequence on the large plastic substrate and measure its resistance and transmittance to make it conform these functions： （a） to reflex electromagnetic wave （b） to avoid the vabin sheet frosting or misting （c） against electromagnetic pulse
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Jen-Chieh, Yin, e 尹人傑. "Sol-Gel Derived PZT Thin Film on Si Substrate with MgO Seed Layer Deposited by RF Magnetron Sputtering for SAW Application". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/78064093036648899338.
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Wei-ChunWang e 王暐鈞. "Transfer-Free Synthesis of Patterned Graphene on Insulating Substrates with Deposited Cu-Ni Film". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/dta5x6.
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41
Shue, Yew-Bin, e 徐耀斌. "Substrate bias effect on amorphous diamond-like carbon films deposited by filtered cathodic arc system". Thesis, 2000. http://ndltd.ncl.edu.tw/handle/64630020977513269711.
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碩士國立交通大學
材料科學與工程系
88
Substrate bias effect on amorphous diamond-like carbon films deposited by filtered cathodic arc system Student : Yew-Bin Shue Advisor : Dr. Chia-Fu Chen Institute of Materials Science and Engineering National Chiao Tung University Abstract In the field of the magnetic recording technology, there is a strong focus on increasing the storage capacity in computer disk drives. The areal density is predicted to reach 10 Gbit/in2 in the next few years. In order to reach this goal the spacing between the magnetic head (read/write transducer) and the magnetic media must reduced without the slider to actually come in to contact with the disk. One obvious way to reduce the magnetic spacing is to reduce the thickness of the protective overcoats. For example, an areal density of 3 Gbit/in2 needs no more than 50 nm magnetic spacing and 10 nm diamond like carbon (DLC) overcoat on both disk and slider, whereas for 10-15 Gbit/in2 recording density, magnetic spacing must be reduce to 25 nm, and overcoats no more than 5 nm. Present choice of carbon overcoat in the magnetic storage hard disk drive industry is sputter deposited. As overcoats get thinner, the performance/reliability of the sputtered carbon films becomes critical, In order to sustain the phenomenal growth rate in areal density, efforts are under way to develop alternative technology. Ion beam CVD, and electron-cyclotron-resonance chemical vapor deposition (ECR-CVD) are adopted to make 5-10 nm thick DLC films. As overcoat thickness reach 5-7 nm, the mechanical properties and corrosion protection become major challenge for DLC process development. Hydrogenated DLC films produced by Ion Beam CVD or ECR-CVD processes have 20-50 % hydrogen by atomic weight and 40-70 % of sp3 content. The films made by these processes may not meet film continuity, mechanical and corrosion requirements at the ultra-thin level (<10 nm). This motivated researchers to develop a new process to produce hydrogen-free, tetrahedral bonding dominated amorphous carbon films by cathodic arc deposition. In the present study, we briefly describe the 45-degree angle magnetic filter cathodic arc deposition process and investigate the influence of substrate bias on hardness of amorphous diamond-like carbon films. And try to correlate the microstructure, chemical composition, and chemical bonding states with hardness of the corresponding films. After deposition, the film properties were analyzed by Raman spectroscopy, Auger Electron Spectroscopy (AES), Fourier transform infrared spectroscopy (FTIR), Nanoindentation system (NIS). Film surface was examined Atomic force microscope (AFM). It was found that DLC films have highest hardness with substrate bias between —50 V to —100 V and the hardness doesn’t seems to have good correlation with Raman I (D)/I (G) ratio. Films have higher hardness when they have higher fraction of sp3 content. It was also found that nitrogen content increase with increasing substrate bias on nitrogen-doped amorphous carbon films and hydrogen content decrease with increasing substrate bias on hydrogen-doped amorphous carbon films. Nitrogen and hydrogen both has effect on the small graphitic crystalline grows. With examination by AFM, it was found that higher substrate bias and high hydrogen gas flow rate could produce smoother film.
42
Chen, Ying-Chao, e 陳瀅照. "Properties of Indium Tin Oxide Thin Films Deposited on Flexible Plastic Substrate at Low Temperatures". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/32570089722966222597.
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碩士大葉大學
電機工程學系碩士班
93
Transparent and conductive indium tin oxide (ITO) thin films were deposited on glass substrates Corning 1737F and Polyethersulfone (PES) flexible plastic substrates by DC magnetron sputtering. The crystalline substrates and optical-electric characteristics were investigated to achieve the optimum room-temperature growth conditions. The crystalline orientation and the surface morphology were characterized by the X-ray diffraction (XRD) and the atomic force microscopy (AFM), respectively. The ITO/substrates interfaces were observed by the scanning electron microscopy (SEM). In addition, the resistivity, the Hall effect, and the optical transmittance were measured to characterize the photo-electric properties of as grown films. It is found that the ITO films are epitaxially grown with the orientations [222], [400], and [440] perpendicular to the film plane. Moreover, a decreased resistivity of thin film with an increase of X-ray (222) diffraction intensity. The obtained optimum growth conditions for the room-temperature deposition are: DC power = 300 W, deposition pressure = 2 mtorr, and the gas of Ar : O2 = 100 : 1. With the optimum conditions, the resistivity of 6.61X10-4 Ω cm, carrier concentration of 2.31X1020 cm-3, and the transmittance of 88% for films grown on glass substrates are obtained. For the films grown on PES substrates, the lowest resistivity 6.42X10-3 Ω cm with carrier concentration of 1.13X1019 cm-3 and the transmittance of 85% can be achieved. Comparing these results with those reported by other workers, it is concluded that an improved photo-electric properties of ITO films can be obtained by using the DC magnetron sputtering technique at low temperatures.
43
Chiu, Ching-Yi, e 邱瀞儀. "Study of Zinc Oxide Thin Films Deposited on the Glass Substrate by Atomic Layer Deposition". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/38800068157696820401.
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碩士國立臺灣大學
材料科學與工程學研究所
96
This thesis presents the investigation of the electrical and optical properties of the ZnO films deposited by atomic layer deposition (ALD) on the glass substrates. The thesis is divided into three topics. The first topic is the deposition of ZnO films as transparent conductive oxide (TCO). The Al-doped ZnO film with a low resistivity of 1.45×10-3Ω-cm was obtained and the average optical transmittances of the films is in excess of 74%.The decrease in the resistance of ZnO films by the Al doping is caused by the increase in the mobility (＞200cm2/V-s),which may be attributed the the increase in the grain size with（ ）orientation as indicated in the X-ray diffraction(XRD) pattern. The second topic is the preparation of high-quality ZnO films on the glass substrate using the ALD technique.We used two-step approach to grow ZnO films with high (0002) orientation indicated by the XRD measurement. The PL spectrum of ZnO exhibits a strong, near-band-edge UV emission at 379 nm with negligible defect-related bands. The buffer layer and the deposition temperature are important factors for the the growth of ZnO films with high optical quality. The third topic is the study of the optical properties of the high-quality ZnO thin films grown by ALD on the glass substrate. The exciton emission and their multiple-phonon replicas were observed in the low-temperature PL spectrum. The optically pumped stimulated emission with a low threshold intensity (51kW/cm2) was also observed at room temperature. The low-threshold stimulated emission indicates the ZnO film grown by the ALD technique on the glass substrate has a high optical quality.
44
Xu, Ying-Zhi, e 許景誌. "EFFECT OF SUBSTRATE CONDITION ON THE QUALITY OF SUPERCONDUCTING YBaCuO THIN FILMS DEPOSITED ON MgO". Thesis, 1996. http://ndltd.ncl.edu.tw/handle/49081555252126679905.
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45
Shu, C. C., e 許景誌. "Effect of substrate condition on the quality of superconducting YBaCuO thin films deposited on MgO". Thesis, 1996. http://ndltd.ncl.edu.tw/handle/83659779634481280085.
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碩士國立交通大學
電子物理學系
84
In this thesis, the defailed influence of the MgO substrates, both prior to and during deposition, on the morphology and microwave properties ofthe pulsed laser deposited YBaCuO thin films were studied. It was found that by modifying the surface condition of the substrates prior to deposition , the growth and hence the morphology of the films can be greatly altered. Both atomic force microscopy and scanning electron microscopy were used to reveal the surface morphology of the films and to give intimate correctionsbetween the films microstructure and it microwave properties.
46
Ta-HsuanKuan e 官大軒. "The Study on Thin Film Microstructure, Electrical and Optical Properties and Bending Fatigue Life Arising in the Aluminum-Doped Zinc Oxide Films Deposited on Tilted PET Substrate". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/46356908347818107480.
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碩士國立成功大學
機械工程學系
103
A flat plate in the deposition stage is designed to have a flexible tilt angle and thus form a variable inclination angle between the ion beam and the direction normal to a PET substrate. Five kinds of inclination angle, 0°, 15°, 30°, 45° and 60° were used to prepare the PET/aluminum-doped zinc oxide specimens in order to examine the effects of the inclination angle and the number of bending cycles on several parameters including the O2-peak intensity ratio (IRO2) from the Electron spectroscopy for chemical analysis, which is identified to be one of the controlling factors in the determinations of electrical, optical, piezoelectric and mechanical properties. The effects of inclination angle on IRO2 and the effects of IRO2 on the parameters of the volume fractions of IRZnO(002) and IRZnO(103) from XRD analyses, the composite grain size and the residual stress in the thin film are investigated systematically. Increases in the inclination angle can raise the IRO2 value; they also reduce the peak intensity, IRZnO. A rise in IRO2 can reduce the volume fraction of IRZnO(002) but raise the residual stress of thin film; it is favorable for the lowering of the composite grain size. The combination of gComposite increase and IRO2 decrease has resulted in an electrical resistivity increase and a carrier mobility decrease. An increase in the residual stress has reduced the fatigue life of bending specimen and the piezoelectric coefficient. The uses of nonzero inclination angle create favorable conditions to raise the transmittance integration over the wavelengths of visible light and the intensities of the three peaks in the photoluminescence spectrum.
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Yang, Tsan-Hao, e 楊璨豪. "Magnetic pinning effect of YBa2Cu3O7−δ thin film deposited on TmMnO3 nanoparticles decorated SrTiO3 substrates". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/cu2a3n.
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碩士國立交通大學
電子物理系所
103
The c-axis-oriented YBa2Cu3O7-δ (YBCO) thin films were deposited on bare and TmMnO3 (TMO) nanoparticle decorated SrTiO3 (STO) substrates by pulsed laser deposition. The effect of antiferromagnetic TMO nanoparticles, present at the interface between film and substrate, on the superconducting properties of YBCO thin film has been investigated by LCR meter and SQUID. The YBCO thin film on decorated STO substrate with high-density TMO nanoparticles shows significant improvement in the critical current density and pinning force density as compared to the YBCO thin film deposited on the decorated STO substrate with low-density TMO nanoparticles and bare substrate. This reveals that the vortex pinning by the present of TMO nanoparticles, which may induce extended defects along the c-axis, only occurs when the density of TMO nanoparticles exceeds certain threshold condition.
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陳堯琪. "Indium Tin Oxide Films Deposited by High Power Impulse Magnetron Sputtering on Flexible Polyethylene Terephthalate Substrate". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/03313795675284441803.
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碩士逢甲大學
材料科學與工程學系
103
Indium tin oxide (ITO) has been widely used in optoelectronic, such as flat panel display, touch panel, and solar cell due to its high optical transmittance and high electrical conductivity. In addition, together with the development of the wearable smart devices, the flexible ITO thin film has also been paid attention. However, limited by the low thermal stability of the flexible polymer substrate, it is not possible to deposit high conductive and high transparent films by thermal assisted or post-annealing method. In this study, a high power impulse magnetron sputtering (HIPIMS) was used to deposit ITO film. Different from conventional direct-current magnetron sputtering (DCMS), HIPIMS presents higher ionization rate and higher ion energy, abling to produce coatings with highly crystallinity, dance and strong film adhesion at low temperature. A constant voltage was therefore employed in this study to prepare ITO films on polyethylene terephthalate (PET) flexible substrates. By introducing optical emission spectrometry (OES), the plasma behaviors under metallic and reactive modes, voltage-current response, and microstructure of the films were correlated. Static and dynamic bending test of the deposited sample were examined for evaluating the fesibility of this deposition technique on PET flexible substrates. Experimental results show that the self-sputtering was achieved under metallic mode (namely without oxygen admission). This is evidenced by the dependence between cathode voltage and peak current, as well as emission spectra measured by OES. In the voltage range of 300 V to 800 V invistaged in this study, HIPIMS mode is presented over 550 V. When the output pulse width increases from 50 μs to 250 μs, both the intensity of atomic species and ion species in the sputtering plasma increase steadily. With the output pulse width over 150 μs, the results are affected by the occurrence of arcing to bring dramatic fluctuation in the intensity of the atomic and ion species and consequently the decreased peak current density and peak power density. This will be more prounced when at a higher pulse frequency. On the other hand, the HIPIMS-ITO growth rate is increased by increasing pulse width due to the increased average power, the deposited sample was significantly warped with the output pulse width over 200 μs (due to the heat delivery). Therefore, the output pulse width 150 μs was chosen as an optimal value in this study. After optimization work, the HIPIMS-ITO, with degree of crystallinity obviously higher than DCMS-ITO, gives rise to exhibit a lower carrier concentration and higher carrier mobility, and therfore higher optical transmittance (>78 %) and lower sheet resistance (105 Ω/□). For static bending test results, the DCMS-ITO shows a critical radius of curvature (Rc) of +18.4mm while it is +11.1 mm for the HIPIMS-ITO. Under dynamic bending test, the DCMS-ITO presents only 5 cycles of repeated bending and the HIPIMS-ITO is over 1200 cycles. Obviously, the contribution of HIPIMS to ITO film quality, as opposed to DCMS-ITO, lies in the improved coating adhesion and thus the increased mechanical durability. As to the improvement in the electrical and optical properties of the deposited ITO film, relatively few is seen. For the reactive mode operation ( by controlling the O2/Ar flow ratio), the results of the prepared HIPIMS-ITO were further investigated across a wide range of the O2/Ar flow ratio from 0 to 1. The peak current is found to be increased due probably to the oxygen-enriched target surface to alter secondary electron emission. Meanwhile, the arc events over the target surface is also increased, leaving the available range of O2/Ar flow ratio to a lower level. Within the O2/Ar flow ratio investigated from 0.00 to 0.10, the film growth rate also increases. Ultimate optical transmittance 88 % of the HIPIMS-ITO deposited sample can be obtained when at a O2/Ar flow ratio of 0.10. However, the lowest sheet resistance (74 Ω/□) happened to the HIPIMS-ITO at the O2/Ar flow ratio of 0.04. There is not much change in mechanical bending test results.
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Chang, Ting-Hsun, e 張庭熏. "Growth of Ultrananocrystalline Diamond Films on Silicon and Tungsten Carbide Substrates Using Electrophoresis-deposited Nano-diamond Film as Nucleation Layer". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/77635537197346134200.
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碩士國立清華大學
材料科學工程學系
99
In this work, we report the utilization of nano-diamond layer electrophoresis-deposited on Si to perform as a nucleation layer for growing ultra-nanocrystalline diamond (UNCD) film using microwave plasma-enhanced chemical vapor deposition (MPECVD) system. The morphology of the as-deposited diamond nanoparticles and UNCD films are studied by field emission scanning electron microscope (FESEM). Raman and electron field emission (EFE) studies reveal that the obtained UNCD films derived from electrophoresis possess the same performance as a nucleation layer obtained through the ultrasonication method. Moreover, we also demonstrate the growth of UNCD film onto Si nanowires (SiNWs) and tungsten carbide (WC) through the electrophoresis nucleation technique. Electrophoresis nucleation provides a better aligned SiNWs than ultrasonication technique. Enhanced EFE properties are also observed for UNCD nanoemitters on electrophoresis nucleated SiNWs. For the WC substrates, both ultrasonication and electrophoresis nucleations can promote the growth of UNCD films successfully. In addition, UNCD films on electrophoresis nucleated WC substrates also shows better EFE properties.
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Tsui, Yu-Hsiang, e 崔侑翔. "Effect of Substrate bias on Structure and Properties of VN Thin Films Deposited by Unbalanced Magnetron Sputtering". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/36s3cd.
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