Artigos de revistas sobre o tema "FD-SOI (transistors)"
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Angelov, George V., Dimitar N. Nikolov e Marin H. Hristov. "Technology and Modeling of Nonclassical Transistor Devices". Journal of Electrical and Computer Engineering 2019 (3 de novembro de 2019): 1–18. http://dx.doi.org/10.1155/2019/4792461.
Texto completo da fonteLagaev, Dmitriy A., Aleksey S. Klyuchnikov e Nikolay A. Shelepin. "Prospects for applying FD-SOI technology to space applications". Journal of Physics: Conference Series 2388, n.º 1 (1 de dezembro de 2022): 012135. http://dx.doi.org/10.1088/1742-6596/2388/1/012135.
Texto completo da fonteTaher Abuelma’atti, Muhammad. "Harmonic and intermodulation distortion in SOI FD transistors". Solid-State Electronics 47, n.º 5 (maio de 2003): 797–800. http://dx.doi.org/10.1016/s0038-1101(02)00453-7.
Texto completo da fonteAssalti, Rafael, Denis Flandre e Michelly De Souza. "Influence of Geometrical Parameters on the DC Analog Behavior of the Asymmetric Self-Cascode FD SOI nMOSFETs". Journal of Integrated Circuits and Systems 13, n.º 2 (5 de outubro de 2018): 1–7. http://dx.doi.org/10.29292/jics.v13i2.15.
Texto completo da fonteSchmidt, Alexander, Holger Kappert e Rainer Kokozinski. "Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing". Journal of Microelectronics and Electronic Packaging 10, n.º 4 (1 de outubro de 2013): 171–82. http://dx.doi.org/10.4071/imaps.389.
Texto completo da fonteMota Barbosa da Silva, Lucas, Bruna Cardoso Paz e Michelly De Souza. "Analysis of Mobility in Graded-Channel SOI Transistors Aiming at Circuit Simulation". Journal of Integrated Circuits and Systems 15, n.º 2 (31 de julho de 2020): 1–5. http://dx.doi.org/10.29292/jics.v15i2.188.
Texto completo da fonteSchmidt, Alexander, Holger Kappert e Rainer Kokozinski. "Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (1 de janeiro de 2013): 000122–33. http://dx.doi.org/10.4071/hiten-ta14.
Texto completo da fonteCerdeira, A., M. Estrada, R. Quintero, D. Flandre, A. Ortiz-Conde e F. J. Garcı́a Sánchez. "New method for determination of harmonic distortion in SOI FD transistors". Solid-State Electronics 46, n.º 1 (janeiro de 2002): 103–8. http://dx.doi.org/10.1016/s0038-1101(01)00258-1.
Texto completo da fonteGaillardin, Marc, Philippe Paillet, Veronique Ferlet-Cavrois, Jacques Baggio, Dale McMorrow, Olivier Faynot, Carine Jahan, Lucie Tosti e Sorin Cristoloveanu. "Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors". IEEE Transactions on Nuclear Science 54, n.º 6 (dezembro de 2007): 2355–62. http://dx.doi.org/10.1109/tns.2007.910860.
Texto completo da fonteLee, Noriyuki, Ryuta Tsuchiya, Yusuke Kanno, Toshiyuki Mine, Yoshitaka Sasago, Go Shinkai, Raisei Mizokuchi et al. "16 x 8 quantum dot array operation at cryogenic temperatures". Japanese Journal of Applied Physics 61, SC (16 de fevereiro de 2022): SC1040. http://dx.doi.org/10.35848/1347-4065/ac4c07.
Texto completo da fonteVasileska, D., K. Raleva, A. Hossain e S. M. Goodnick. "Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors". Journal of Computational Electronics 11, n.º 3 (18 de maio de 2012): 238–48. http://dx.doi.org/10.1007/s10825-012-0404-0.
Texto completo da fonteBhoir, Mandar S., e Nihar R. Mohapatra. "Effects of Scaling on Analog FoMs of UTBB FD-SOI MOS Transistors: A Detailed Analysis". IEEE Transactions on Electron Devices 67, n.º 8 (agosto de 2020): 3035–41. http://dx.doi.org/10.1109/ted.2020.3002878.
Texto completo da fonteNocera, Claudio, Giuseppe Papotto e Giuseppe Palmisano. "Two-Path 77-GHz PA in 28-nm FD-SOI CMOS for Automotive Radar Applications". Electronics 11, n.º 8 (18 de abril de 2022): 1289. http://dx.doi.org/10.3390/electronics11081289.
Texto completo da fonteBarboni, Leonardo. "Evidence of Limitations of the Transconductance-to-Drain-Current Method (gm/Id) for Transistor Sizing in 28 nm UTBB FD-SOI Transistors". Journal of Low Power Electronics and Applications 10, n.º 2 (15 de maio de 2020): 17. http://dx.doi.org/10.3390/jlpea10020017.
Texto completo da fonteAl Mamun, Fahad, Sarma Vrudhula, Dragica Vasileska, Hugh Barnaby e Ivan Sanchez Esqueda. "Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications". Solid-State Electronics 209 (novembro de 2023): 108783. http://dx.doi.org/10.1016/j.sse.2023.108783.
Texto completo da fonteFavre, Luc, Mohammed Bouabdellaoui, Elie Assaf, Imene Guelil, Antoine Ronda e Isabelle Berbezier. "(Invited) SiGe/SOI System: Mechanisms of Condensation and Strain Relaxation". ECS Meeting Abstracts MA2022-01, n.º 20 (7 de julho de 2022): 1088. http://dx.doi.org/10.1149/ma2022-01201088mtgabs.
Texto completo da fonteBertrand, Isabelle, Philippe Flatresse, Guillaume Besnard, Jean-Marc Bethoux, Zdenek Chalupa, Christophe Plantier, Martin Rack, Massinissa Nabet, Jean-Pierre Raskin e Frederic Allibert. "(G02 Best Paper Award Winner) Development Of High Resistivity FD-SOI Substrates for mmWave Applications". ECS Meeting Abstracts MA2022-01, n.º 29 (7 de julho de 2022): 1273. http://dx.doi.org/10.1149/ma2022-01291273mtgabs.
Texto completo da fonteGao, Shaochen, Duc-Tung Vu, Thibauld Cazimajou, Patrick Pittet, Martine Le Berre, Mohammadreza Dolatpoor Lakeh, Fabien Mandorlo et al. "Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology". Photonics 11, n.º 6 (1 de junho de 2024): 526. http://dx.doi.org/10.3390/photonics11060526.
Texto completo da fonteZheng, Qiwen, Jiangwei Cui, Liewei Xu, Bingxu Ning, Kai Zhao, Mingjie Shen, Xuefeng Yu et al. "Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors". IEEE Transactions on Nuclear Science 66, n.º 4 (abril de 2019): 702–9. http://dx.doi.org/10.1109/tns.2019.2901755.
Texto completo da fontede Souza, Michelly, Denis Flandre, Rodrigo Trevisoli Doria, Renan Trevisoli e Marcelo Antonio Pavanello. "On the improvement of DC analog characteristics of FD SOI transistors by using asymmetric self-cascode configuration". Solid-State Electronics 117 (março de 2016): 152–60. http://dx.doi.org/10.1016/j.sse.2015.11.018.
Texto completo da fonteZhang, Guohe, Junhua Lai, Yali Su, Binhong Li, Bo Li, Jianhui Bu e Cheng-Fu Yang. "Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms". Materials 12, n.º 16 (15 de agosto de 2019): 2601. http://dx.doi.org/10.3390/ma12162601.
Texto completo da fonteWatkins, A. C., S. T. Vibbert, J. V. D'Amico, J. S. Kauppila, T. D. Haeffner, D. R. Ball, E. X. Zhang, K. M. Warren, M. L. Alles e L. W. Massengill. "Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors". IEEE Transactions on Nuclear Science 69, n.º 3 (março de 2022): 374–80. http://dx.doi.org/10.1109/tns.2022.3146318.
Texto completo da fonteYamaoka, M., R. Tsuchiya e T. Kawahara. "SRAM Circuit With Expanded Operating Margin and Reduced Stand-By Leakage Current Using Thin-BOX FD-SOI Transistors". IEEE Journal of Solid-State Circuits 41, n.º 11 (novembro de 2006): 2366–72. http://dx.doi.org/10.1109/jssc.2006.882891.
Texto completo da fonteMaiellaro, Giorgio, Giovanni Caruso, Salvatore Scaccianoce, Mauro Giacomini e Angelo Scuderi. "40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors". Electronics 10, n.º 17 (31 de agosto de 2021): 2114. http://dx.doi.org/10.3390/electronics10172114.
Texto completo da fonteBhoir, Mandar S., Yogesh Singh Chauhan e Nihar R. Mohapatra. "Back-Gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization Guidelines". IEEE Transactions on Electron Devices 66, n.º 2 (fevereiro de 2019): 861–67. http://dx.doi.org/10.1109/ted.2018.2888799.
Texto completo da fonteKochiyama, M., T. Sega, K. Hara, Y. Arai, T. Miyoshi, Y. Ikegami, S. Terada, Y. Unno, K. Fukuda e M. Okihara. "Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20μm FD-SOI technology". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 636, n.º 1 (abril de 2011): S62—S67. http://dx.doi.org/10.1016/j.nima.2010.04.086.
Texto completo da fonteGoffioul, Michael, Gilles Dambrine, Danielle Vanhoenacker e Jean-Pierre Raskin. "Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs". Journal of Telecommunications and Information Technology, n.º 3-4 (30 de dezembro de 2000): 72–80. http://dx.doi.org/10.26636/jtit.2000.3-4.25.
Texto completo da fonteCarvalho, Henrique Lanfredi, Ricardo Cardoso Rangel, Katia Sasaki, Leonardo Yojo, Paula Agopian e Joao Martino. "Improved RFET Performance Using Dual-Aluminum-Contact (DAC)". ECS Meeting Abstracts MA2023-01, n.º 33 (28 de agosto de 2023): 1855. http://dx.doi.org/10.1149/ma2023-01331855mtgabs.
Texto completo da fonteKanyandekwe, Joël, Matthias Bauer, Tanguy Marion, Lazhar Saidi, Jean-Baptiste Pin, Jeremie Bisserier, Jérôme Richy et al. "Very Low Temperature Tensile and Selective Si:P Epitaxy for Advanced CMOS Devices". ECS Meeting Abstracts MA2022-02, n.º 32 (9 de outubro de 2022): 1190. http://dx.doi.org/10.1149/ma2022-02321190mtgabs.
Texto completo da fonteKarsenty, Avi, e Avraham Chelly. "Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process". Active and Passive Electronic Components 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/609828.
Texto completo da fonteBédécarrats, Thomas, Philippe Galy, Claire Fenouillet-Béranger e Sorin Cristoloveanu. "Investigation of built-in bipolar junction transistor in FD-SOI BIMOS". Solid-State Electronics 159 (setembro de 2019): 177–83. http://dx.doi.org/10.1016/j.sse.2019.03.057.
Texto completo da fonteHarame, David L. "Perspectives on How the "Sige, Ge, & Related Compounds: Materials, Processing, and Devices" Field Has Changed over the Last 20 Years". ECS Meeting Abstracts MA2022-02, n.º 32 (9 de outubro de 2022): 1181. http://dx.doi.org/10.1149/ma2022-02321181mtgabs.
Texto completo da fonteGaly, Philippe, S. Athanasiou e S. Cristoloveanu. "BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology". Solid-State Electronics 115 (janeiro de 2016): 192–200. http://dx.doi.org/10.1016/j.sse.2015.09.001.
Texto completo da fonteKevkić, Tijana S., Vojkan R. Nikolić, Vladica S. Stojanović, Dragana D. Milosavljević e Slavica J. Jovanović. "Modeling electrostatic potential in FDSOI MOSFETS: An approach based on homotopy perturbations". Open Physics 20, n.º 1 (1 de janeiro de 2022): 106–16. http://dx.doi.org/10.1515/phys-2022-0012.
Texto completo da fonteSharma, Rajneesh, Rituraj S. Rathore e Ashwani K. Rana. "Impact of High-k Spacer on Device Performance of Nanoscale Underlap Fully Depleted SOI MOSFET". Journal of Circuits, Systems and Computers 27, n.º 04 (6 de dezembro de 2017): 1850063. http://dx.doi.org/10.1142/s0218126618500639.
Texto completo da fonteCao, Yong-Feng, M. Arsalan, J. Liu, Yu-Long Jiang e J. Wan. "A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology". IEEE Electron Device Letters 40, n.º 5 (maio de 2019): 738–41. http://dx.doi.org/10.1109/led.2019.2908632.
Texto completo da fonteArtemio Schoulten, Felipe, Rémy Vauche, Jean Gaubert, Sylvain Bourdel e André Augusto Mariano. "Design of a multi-standard IR-UWB emitter in a 28 nm FD-SOI technology based on the frequency transposition pulse synthesis". Journal of Integrated Circuits and Systems 18, n.º 3 (28 de dezembro de 2023): 1–11. http://dx.doi.org/10.29292/jics.v18i3.793.
Texto completo da fonteDuan, F. L., S. P. Sinha, D. E. Ioannou e F. T. Brady. "LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's". IEEE Transactions on Electron Devices 44, n.º 6 (junho de 1997): 972–77. http://dx.doi.org/10.1109/16.585553.
Texto completo da fonteMayeda, Jill, Donald Y. C. Lie e Jerry Lopez. "Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT". Electronics 11, n.º 5 (23 de fevereiro de 2022): 683. http://dx.doi.org/10.3390/electronics11050683.
Texto completo da fonteGolman, Roman, Robert Giterman e Adam Teman. "Multi-Ported GC-eDRAM Bitcell with Dynamic Port Configuration and Refresh Mechanism". Journal of Low Power Electronics and Applications 14, n.º 1 (4 de janeiro de 2024): 2. http://dx.doi.org/10.3390/jlpea14010002.
Texto completo da fonteGiterman, Robert, Alexander Fish, Andreas Burg e Adam Teman. "A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI". IEEE Transactions on Circuits and Systems I: Regular Papers 65, n.º 4 (abril de 2018): 1245–56. http://dx.doi.org/10.1109/tcsi.2017.2747087.
Texto completo da fonte"(Keynote) FD-SOI: The History from Early Transistors to Today". ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-02/30/1952.
Texto completo da fonteValdivieso, C., R. Rodriguez, A. Crespo-Yepes, J. Martin-Martinez e M. Nafria. "Resistive Switching like-behavior in FD-SOI Ω-gate transistors". Solid-State Electronics, setembro de 2023, 108759. http://dx.doi.org/10.1016/j.sse.2023.108759.
Texto completo da fonteYEH, Wenchang, e Masato Ohya. "Characteristics and deviation of low temperature FD-SOI-MOSFETs using sputtering SiO2 gate insulator". Japanese Journal of Applied Physics, 13 de janeiro de 2023. http://dx.doi.org/10.35848/1347-4065/acb2d3.
Texto completo da fonteZhang, Ruiqin, Qiwen Zheng, Jiangwei Cui, Yudong Li, Xuefeng Yu, Wu Lu e Qi Guo. "Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI transistors". IEEE Transactions on Nuclear Science, 2022, 1. http://dx.doi.org/10.1109/tns.2022.3219432.
Texto completo da fonteBhardwaj, Anuj, Sujit K. Singh e Abhisek Dixit. "Narrow-Width Effects in 28-nm FD-SOI Transistors Operating at Cryogenic Temperatures". IEEE Journal of the Electron Devices Society, 2022, 1. http://dx.doi.org/10.1109/jeds.2022.3233302.
Texto completo da fonteShin, Hyun-Jin, Sunil Babu Eadi, Yeong-Jin An, Tae-Gyu Ryu, Do-woo Kim, Hi-Deok Lee e Hyuk-Min Kwon. "Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET". Scientific Reports 12, n.º 1 (2 de novembro de 2022). http://dx.doi.org/10.1038/s41598-022-22575-5.
Texto completo da fonteBergamaschi, Flávio Enrico, Tadeu Mota Frutuoso, Bruna Cardoso Paz, Gérard Billiot, Aloysius G. M. Jansen, Phillipe Galy, Emmanuel Vincent, Fred Gaillard, Blandine Duriez e Mikaël Cassé. "Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures". IEEE Transactions on Electron Devices, 2024, 1–7. http://dx.doi.org/10.1109/ted.2024.3367316.
Texto completo da fonte"Ультратонкие скрытые стеки оксидов гафния и алюминия в полевых структурах кремний-на-изоляторе / Попов В.П., Антонов В.А., Ильницкий М.А., Мяконьких А.В., Руденко К.В." Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019», 20 de agosto de 2019, 174. http://dx.doi.org/10.34077/semicond2019-174.
Texto completo da fonteXueyin, Su, Xu Binbin, Bo Tang, Jing Xu, Jinbiao Liu, Cui Yan, Yang Meiyin et al. "Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain". ECS Journal of Solid State Science and Technology, 20 de maio de 2024. http://dx.doi.org/10.1149/2162-8777/ad4de0.
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