Artigos de revistas sobre o tema "External gettering"
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Veja os 36 melhores artigos de revistas para estudos sobre o assunto "External gettering".
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Hofstetter, Jasmin, Jean F. Lelièvre, Carlos del Cañizo e Antonio Luque. "Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication". Solid State Phenomena 156-158 (outubro de 2009): 387–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.387.
Texto completo da fonteMacdonald, Daniel, An Yao Liu e Sieu Pheng Phang. "External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells". Solid State Phenomena 205-206 (outubro de 2013): 26–33. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.26.
Texto completo da fonteMartinuzzi, Santo, e Isabelle Périchaud. "External Gettering for Multicrystalline Silicon Wafers". Solid State Phenomena 47-48 (julho de 1995): 153–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.153.
Texto completo da fonteLysáček, David, Jan Šik e Petr Bábor. "Polycrystalline Silicon Layers with Enhanced Thermal Stability". Solid State Phenomena 178-179 (agosto de 2011): 385–91. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.385.
Texto completo da fontePérichaud, Isabelle, F. Floret, M. Stemmer e Santo Martinuzzi. "Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers". Solid State Phenomena 32-33 (dezembro de 1993): 77–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.32-33.77.
Texto completo da fonteLysáček, David, Petr Kostelník e Petr Pánek. "Polycrystalline Silicon Gettering Layers with Controlled Residual Stress". Solid State Phenomena 205-206 (outubro de 2013): 284–89. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.284.
Texto completo da fonteMartinuzzi, Santo, I. Perichad e M. Stemmer. "External Gettering around Extended Defects in Multicrystalline Silicon Wafers". Solid State Phenomena 37-38 (março de 1994): 361–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.361.
Texto completo da fonteGay, N., e S. Martinuzzi. "External self-gettering of nickel in float zone silicon wafers". Applied Physics Letters 70, n.º 19 (12 de maio de 1997): 2568–70. http://dx.doi.org/10.1063/1.118921.
Texto completo da fonteHwan Kim, Yong, Ryosuke O. Suzuki, Hiroshi Numakura, Hirobumi Wada e Katsutoshi Ono. "Removal of oxygen and nitrogen from niobium by external gettering". Journal of Alloys and Compounds 248, n.º 1-2 (fevereiro de 1997): 251–58. http://dx.doi.org/10.1016/s0925-8388(96)02679-5.
Texto completo da fontePark, Hyomin, Sung Ju Tark, Chan Seok Kim, Sungeun Park, Young Do Kim, Chang-Sik Son, Jeong Chul Lee e Donghwan Kim. "Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells". International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/794876.
Texto completo da fonteMartinuzzi, Santo, e Isabelle Périchaud. "Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers". Materials Science Forum 143-147 (outubro de 1993): 1629–34. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.1629.
Texto completo da fonteWalton, J. T., N. Derhacobian, Y. K. Wong e E. E. Haller. "Lithium‐ion mobility improvement in floating‐zone silicon by external gettering". Applied Physics Letters 63, n.º 3 (19 de julho de 1993): 343–45. http://dx.doi.org/10.1063/1.110037.
Texto completo da fontePérichaud, Isabelle, e Santo Martinuzzi. "Interaction of Impurities and Dislocations in Silicon before and after External Gettering". Solid State Phenomena 57-58 (julho de 1997): 103–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.57-58.103.
Texto completo da fonteEhret, E., V. Allais, J. P. Vallard e A. Laugier. "Influence of extended defects and native impurities on external gettering in polycrystalline silicon". Materials Science and Engineering: B 34, n.º 2-3 (novembro de 1995): 210–15. http://dx.doi.org/10.1016/0921-5107(95)01275-3.
Texto completo da fonteKostikov, Yu A., e A. M. Romanenkov. "Mathematical modeling of the gettering process for a cylindrical region". Journal of Physics: Conference Series 2308, n.º 1 (1 de julho de 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2308/1/012001.
Texto completo da fonteLee, W. P., E. P. Teh, H. K. Yow, C. L. Choong e T. Y. Tou. "Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field". Journal of Electronic Materials 34, n.º 7 (julho de 2005): L25—L29. http://dx.doi.org/10.1007/s11664-005-0101-x.
Texto completo da fonteKhedher, N., A. Ben Jaballah, M. Bouaïcha, H. Ezzaouia e R. Bennnaceur. "Effect of external gettering with porous silicon on the electrical properties of Metal–Oxide–Silicon devices". Physics Procedia 2, n.º 3 (novembro de 2009): 983–88. http://dx.doi.org/10.1016/j.phpro.2009.11.053.
Texto completo da fonteJoonwichien, Supawan, Isao Takahashi, Kentaro Kutsukake e Noritaka Usami. "Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities". Progress in Photovoltaics: Research and Applications 24, n.º 12 (28 de junho de 2016): 1615–25. http://dx.doi.org/10.1002/pip.2795.
Texto completo da fonteGay, N., e Santo Martinuzzi. "Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers". Solid State Phenomena 57-58 (julho de 1997): 115–22. http://dx.doi.org/10.4028/www.scientific.net/ssp.57-58.115.
Texto completo da fonteMartinuzzi, S., I. Perichaud e J. J. Simon. "External gettering by aluminum–silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers". Applied Physics Letters 70, n.º 20 (19 de maio de 1997): 2744–46. http://dx.doi.org/10.1063/1.119009.
Texto completo da fonteAmri, Chohdi, Rachid Ouertani, Abderrahmane Hamdi e Hatem Ezzaouia. "Enhancement of electrical parameters in solar grade monocrystalline silicon by external gettering through sacrificial silicon nanowire layer". Materials Research Bulletin 98 (fevereiro de 2018): 41–46. http://dx.doi.org/10.1016/j.materresbull.2017.10.003.
Texto completo da fonteKoveshnikov, Sergei V., David Beauchaine, Zbigniew J. Radzimski, Li Ling e K. V. Ravi. "Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers". Solid State Phenomena 82-84 (novembro de 2001): 393–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.82-84.393.
Texto completo da fonteHieslmair, Henry, Scott McHugo e Eicke Weber. "External Gettering Comparison and Structural Characterization of Single and Polycrystalline Silicon". MRS Proceedings 378 (1995). http://dx.doi.org/10.1557/proc-378-327.
Texto completo da fonteGafiteanu, R., U. Gösele e T. Y. Tan. "Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations". MRS Proceedings 378 (1995). http://dx.doi.org/10.1557/proc-378-297.
Texto completo da fontePerichaud, I., e S. Martinuzzi. "External Gettering and Hydrogenation Effects on Electrical Properties of Multicrystalline Silicon Wafers". MRS Proceedings 262 (1992). http://dx.doi.org/10.1557/proc-262-481.
Texto completo da fonteGay Henquinet, N., e S. Martinuzzi. "Limiting Factors of Backside External Gettering by Nanocavities and Aluminum-Silicon Alloying in Silicon Wafers". MRS Proceedings 510 (janeiro de 1998). http://dx.doi.org/10.1557/proc-510-221.
Texto completo da fonteBouhafs, Djoudi, Messaoud Boumaour, Abderrahmane Moussi, Saddik El Hak Abaïdia, Nabil Khelifati e Baya Palahouane. "Improvement of charge carrier lifetime in heat exchange method multicrystalline silicon wafers by extended phosphorous gettering process". Journal of Renewable Energies 14, n.º 4 (24 de outubro de 2023). http://dx.doi.org/10.54966/jreen.v14i4.289.
Texto completo da fonteLu, Congli, Yuzhen Chen, Yuhang Bai, Fei Wang, Baoqiang Xu, Hang Liu, Bin Yang e Yikun Luan. "Deoxidation Purification of La-Ce Alloy by External Gettering". SSRN Electronic Journal, 2022. http://dx.doi.org/10.2139/ssrn.4218680.
Texto completo da fonteAyvazyan, Gagik, Levon Hakhoyan, Karen Ayvazyan e Arthur Aghabekyan. "External Gettering of Metallic Impurities by Black Silicon Layer". physica status solidi (a), 22 de dezembro de 2022. http://dx.doi.org/10.1002/pssa.202200793.
Texto completo da fonteLu, Congli, Yuzhen Chen, Yuhang Bai, Baoqiang Xu, Hang Liu, Bin Yang, Yikun Luan e Fei Wang. "Deoxidation purification of La–Ce alloy by solid state external gettering". Vacuum, abril de 2023, 112086. http://dx.doi.org/10.1016/j.vacuum.2023.112086.
Texto completo da fonteGay, N., e S. Martinuzzi. "Diffusion and Self-Gettering of Nickel in Float Zone Silicon Wafers". MRS Proceedings 469 (1997). http://dx.doi.org/10.1557/proc-469-469.
Texto completo da fontePerichaud, I., e S. Martinuzzi. "Impurity Removing at Dislocations in Float Zone Silicon by Aluminium-Silicon Alloying". MRS Proceedings 469 (1997). http://dx.doi.org/10.1557/proc-469-493.
Texto completo da fonteReiche, M., e W. Nitzsche. "The Influence of Stresses on the Surface-Near Defect Structure". MRS Proceedings 262 (1992). http://dx.doi.org/10.1557/proc-262-621.
Texto completo da fontePerichaud, I., e S. Martinuzzi. "Recombination Strength at Intra and Intergrain Defects in Crystalline Silicon Investigated by Low Temperature Lbic Scan Maps". MRS Proceedings 510 (janeiro de 1998). http://dx.doi.org/10.1557/proc-510-633.
Texto completo da fonteHall, Robert B., Allen M. Barnett, Jeff E. Cotter, David H. Ford, Alan E. Ingram e James A. Rand. "Advanced, Thin, Polycrystalline Silicon-Film™ Solar Cells on Low-Cost Substrates". MRS Proceedings 426 (1996). http://dx.doi.org/10.1557/proc-426-117.
Texto completo da fonteZango, Arlinda Basílio, Rik Crutzen e Nanne de Vries. "Evaluation of a Sexual Transmitted Infection Prevention Program Among University Students in Beira City Central Mozambique: A Study Protocol". Frontiers in Reproductive Health 3 (28 de outubro de 2021). http://dx.doi.org/10.3389/frph.2021.745309.
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