Literatura científica selecionada sobre o tema "External gettering"
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Artigos de revistas sobre o assunto "External gettering"
Hofstetter, Jasmin, Jean F. Lelièvre, Carlos del Cañizo e Antonio Luque. "Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication". Solid State Phenomena 156-158 (outubro de 2009): 387–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.387.
Texto completo da fonteMacdonald, Daniel, An Yao Liu e Sieu Pheng Phang. "External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells". Solid State Phenomena 205-206 (outubro de 2013): 26–33. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.26.
Texto completo da fonteMartinuzzi, Santo, e Isabelle Périchaud. "External Gettering for Multicrystalline Silicon Wafers". Solid State Phenomena 47-48 (julho de 1995): 153–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.153.
Texto completo da fonteLysáček, David, Jan Šik e Petr Bábor. "Polycrystalline Silicon Layers with Enhanced Thermal Stability". Solid State Phenomena 178-179 (agosto de 2011): 385–91. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.385.
Texto completo da fontePérichaud, Isabelle, F. Floret, M. Stemmer e Santo Martinuzzi. "Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers". Solid State Phenomena 32-33 (dezembro de 1993): 77–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.32-33.77.
Texto completo da fonteLysáček, David, Petr Kostelník e Petr Pánek. "Polycrystalline Silicon Gettering Layers with Controlled Residual Stress". Solid State Phenomena 205-206 (outubro de 2013): 284–89. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.284.
Texto completo da fonteMartinuzzi, Santo, I. Perichad e M. Stemmer. "External Gettering around Extended Defects in Multicrystalline Silicon Wafers". Solid State Phenomena 37-38 (março de 1994): 361–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.361.
Texto completo da fonteGay, N., e S. Martinuzzi. "External self-gettering of nickel in float zone silicon wafers". Applied Physics Letters 70, n.º 19 (12 de maio de 1997): 2568–70. http://dx.doi.org/10.1063/1.118921.
Texto completo da fonteHwan Kim, Yong, Ryosuke O. Suzuki, Hiroshi Numakura, Hirobumi Wada e Katsutoshi Ono. "Removal of oxygen and nitrogen from niobium by external gettering". Journal of Alloys and Compounds 248, n.º 1-2 (fevereiro de 1997): 251–58. http://dx.doi.org/10.1016/s0925-8388(96)02679-5.
Texto completo da fontePark, Hyomin, Sung Ju Tark, Chan Seok Kim, Sungeun Park, Young Do Kim, Chang-Sik Son, Jeong Chul Lee e Donghwan Kim. "Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells". International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/794876.
Texto completo da fonteTeses / dissertações sobre o assunto "External gettering"
Hayes, Maxim. "Intégration de collecteurs de charges avancés dans les cellules solaires bifaciales à haut rendement : vers un procédé générique pour les nouveaux matériaux silicium". Electronic Thesis or Diss., Aix-Marseille, 2020. http://www.theses.fr/2020AIXM0519.
Texto completo da fonteThanks to a relatively simple fabrication process and high conversion efficiency values the PERC structure is well established at the industrial level. Nevertheless, industrial PERC solar cells performances are mostly limited by two charge carrier recombination sources: P thermally diffused emitter on the front side and the Al-Si interfaces at the rear contacts. The main goal of this work aims at limiting both recombination sources. A selective emitter (SE) obtained by plasma immersion ion implantation (PIII) is developed for an integration on the front side; whereas a B-doped polysilicon (poly-Si) on oxide passivated contact (PC) is integrated on the back side. The second goal of this work consists in evaluating the compatibility between these advanced carrier collectors and directionally solidified Si materials. SE featuring good geometrical properties and a well-controlled doping were fabricated thanks to an in situ localized doping process obtained with a specific mask developed for PIII. Besides, several metal deposition technologies were investigated for the poly-Si(B). Fire-through screen-printing appears as the most promising approach so far. Indeed, the deposition of a non-sacrificial hydrogen-rich layer allowed to reach an excellent surface passivation level for solar cell precursors. However, the specific contact resistivity obtained remains too high for an optimal cell integration. Lastly, the fabrication of poly-Si PC showed excellent external gettering efficiencies for multicrystalline Si. Thus, the potential of the developed cell structure to be integrated with low-cost and low carbon footprint materials is encouraging
Trabalhos de conferências sobre o assunto "External gettering"
Joshi, Subhash M., Roman Gafiteanu, Ulrich M. Gösele e Teh Y. Tan. "Simulations and experiments on external gettering of silicon". In The 13th NREL photovoltaics program review meeting. AIP, 1996. http://dx.doi.org/10.1063/1.49382.
Texto completo da fonteHieslmair, Henry, Scott A. McHugo e Eicke R. Weber. "External gettering of silicon materials containing various efficiency-limiting defects". In The 13th NREL photovoltaics program review meeting. AIP, 1996. http://dx.doi.org/10.1063/1.49431.
Texto completo da fonteMartinuzzi, S., H. El Ghitani, D. Sarti e P. Torchio. "Influence of phosphorus external gettering on recombination activity and passivation of defects in polycrystalline silicon". In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105975.
Texto completo da fonteMishra, Kamal K., Mark Stinson e John K. Lowell. "Influence of oxygen-iron interaction on the external gettering of Fe in p-Si by polycrystalline silicon film". In Microelectronic Manufacturing '95, editado por John K. Lowell, Ray T. Chen e Jagdish P. Mathur. SPIE, 1995. http://dx.doi.org/10.1117/12.221189.
Texto completo da fonte