Artigos de revistas sobre o tema "Emerging Non-Volatile memories"
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Fujisaki, Yoshihisa. "Overview of emerging semiconductor non-volatile memories". IEICE Electronics Express 9, n.º 10 (2012): 908–25. http://dx.doi.org/10.1587/elex.9.908.
Texto completo da fonteMelanotte, M., R. Bez e G. Crisenza. "Non volatile memories-status and emerging trends". Microelectronic Engineering 15, n.º 1-4 (outubro de 1991): 603–12. http://dx.doi.org/10.1016/0167-9317(91)90293-m.
Texto completo da fonteSi, Mengwei, Huai-Yu Cheng, Takashi Ando, Guohan Hu e Peide D. Ye. "Overview and outlook of emerging non-volatile memories". MRS Bulletin 46, n.º 10 (outubro de 2021): 946–58. http://dx.doi.org/10.1557/s43577-021-00204-2.
Texto completo da fonteDieny, B., e Chennupati Jagadish. "Emerging non-volatile memories: magnetic and resistive technologies". Journal of Physics D: Applied Physics 46, n.º 7 (1 de fevereiro de 2013): 070301. http://dx.doi.org/10.1088/0022-3727/46/7/070301.
Texto completo da fonteFujisaki, Yoshihisa. "Review of Emerging New Solid-State Non-Volatile Memories". Japanese Journal of Applied Physics 52, n.º 4R (1 de abril de 2013): 040001. http://dx.doi.org/10.7567/jjap.52.040001.
Texto completo da fonteMakarov, Alexander, Viktor Sverdlov e Siegfried Selberherr. "Modeling Emerging Non-volatile Memories: Current Trends and Challenges". Physics Procedia 25 (2012): 99–104. http://dx.doi.org/10.1016/j.phpro.2012.03.056.
Texto completo da fonteWang, Yan, Ziyu Lv, Li Zhou, Xiaoli Chen, Jinrui Chen, Ye Zhou, V. A. L. Roy e Su-Ting Han. "Emerging perovskite materials for high density data storage and artificial synapses". Journal of Materials Chemistry C 6, n.º 7 (2018): 1600–1617. http://dx.doi.org/10.1039/c7tc05326f.
Texto completo da fonteKhan, Mohammad Nasim Imtiaz, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay e Swaroop Ghosh. "Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, n.º 4 (28 de setembro de 2021): 38. http://dx.doi.org/10.3390/jlpea11040038.
Texto completo da fonteKhan, Mohammad Nasim Imtiaz, e Swaroop Ghosh. "Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories". Journal of Low Power Electronics and Applications 11, n.º 4 (24 de setembro de 2021): 36. http://dx.doi.org/10.3390/jlpea11040036.
Texto completo da fonteWaser, Rainer. "Emerging Non-Volatile Memories by Exploiting Redox Reactions on the Nanoscale". ECS Transactions 25, n.º 7 (17 de dezembro de 2019): 441–46. http://dx.doi.org/10.1149/1.3203981.
Texto completo da fonteA, Ragavi, e Arivasanth M. "Design of Look up Table for Emerging Non Volatile Memories in FRAM". IJIREEICE 5, n.º 6 (15 de maio de 2017): 59–65. http://dx.doi.org/10.17148/ijireeice.2017.5610.
Texto completo da fonteGolubović, D. S., A. H. Miranda, N. Akil, R. T. F. van Schaijk e M. J. van Duuren. "Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories". Microelectronic Engineering 84, n.º 12 (dezembro de 2007): 2921–26. http://dx.doi.org/10.1016/j.mee.2007.03.009.
Texto completo da fonteWang, L., C. H. Yang e J. Wen. "Physical principles and current status of emerging non-volatile solid state memories". Electronic Materials Letters 11, n.º 4 (julho de 2015): 505–43. http://dx.doi.org/10.1007/s13391-015-4431-4.
Texto completo da fonteHakert, Christian, Kuan-Hsun Chen, Horst Schirmeier, Lars Bauer, Paul R. Genssler, Georg von der Brüggen, Hussam Amrouch, Jörg Henkel e Jian-Jia Chen. "Software-Managed Read and Write Wear-Leveling for Non-Volatile Main Memory". ACM Transactions on Embedded Computing Systems 21, n.º 1 (31 de janeiro de 2022): 1–24. http://dx.doi.org/10.1145/3483839.
Texto completo da fonteAwais, Muhammad, Feng Zhao e Kuan Yew Cheong. "Bio-Organic Based Resistive Switching Random-Access Memory". Solid State Phenomena 352 (30 de outubro de 2023): 85–93. http://dx.doi.org/10.4028/p-tbxv2r.
Texto completo da fonteSpassov, D., A. Paskaleva, T. A. Krajewski, E. Guziewicz e G. Luka. "Hole and electron trapping in HfO2/Al2O3 nanolaminated stacks for emerging non-volatile flash memories". Nanotechnology 29, n.º 50 (18 de outubro de 2018): 505206. http://dx.doi.org/10.1088/1361-6528/aae4d3.
Texto completo da fonteWalden, Candace, Devesh Singh, Meenatchi Jagasivamani, Shang Li, Luyi Kang, Mehdi Asnaashari, Sylvain Dubois, Bruce Jacob e Donald Yeung. "Monolithically Integrating Non-Volatile Main Memory over the Last-Level Cache". ACM Transactions on Architecture and Code Optimization 18, n.º 4 (31 de dezembro de 2021): 1–26. http://dx.doi.org/10.1145/3462632.
Texto completo da fonteHuang, Shanshi, Xiaoyu Sun, Xiaochen Peng, Hongwu Jiang e Shimeng Yu. "Achieving High In Situ Training Accuracy and Energy Efficiency with Analog Non-Volatile Synaptic Devices". ACM Transactions on Design Automation of Electronic Systems 27, n.º 4 (31 de julho de 2022): 1–19. http://dx.doi.org/10.1145/3500929.
Texto completo da fonteJafari, Atousa, Christopher Münch e Mehdi Tahoori. "A Spintronic 2M/7T Computation-in-Memory Cell". Journal of Low Power Electronics and Applications 12, n.º 4 (6 de dezembro de 2022): 63. http://dx.doi.org/10.3390/jlpea12040063.
Texto completo da fonteHosseini, Fateme S., Fanruo Meng, Chengmo Yang, Wujie Wen e Rosario Cammarota. "Tolerating Defects in Low-Power Neural Network Accelerators Via Retraining-Free Weight Approximation". ACM Transactions on Embedded Computing Systems 20, n.º 5s (31 de outubro de 2021): 1–21. http://dx.doi.org/10.1145/3477016.
Texto completo da fonteTAKAI, Yoshiki, Mamoru FUKUCHI, Chihiro MATSUI, Reika KINOSHITA e Ken TAKEUCHI. "Analysis on Hybrid SSD Configuration with Emerging Non-Volatile Memories Including Quadruple-Level Cell (QLC) NAND Flash Memory and Various Types of Storage Class Memories (SCMs)". IEICE Transactions on Electronics E103.C, n.º 4 (1 de abril de 2020): 171–80. http://dx.doi.org/10.1587/transele.2019cdp0006.
Texto completo da fonteSharma, Yogesh, Pankaj Misra, Shojan P. Pavunny e Ram S. Katiyar. "Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications". MRS Proceedings 1729 (2015): 23–28. http://dx.doi.org/10.1557/opl.2015.92.
Texto completo da fonteIzadpanah, Ramin, Christina Peterson, Yan Solihin e Damian Dechev. "PETRA". ACM Transactions on Architecture and Code Optimization 18, n.º 2 (março de 2021): 1–26. http://dx.doi.org/10.1145/3446391.
Texto completo da fonteKamath, Rachana, Parantap Sarkar, Sindhoora Kaniyala Melanthota, Rajib Biswas, Nirmal Mazumder e Shounak De. "Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene–PVA-Composite-Based Aryl Acrylate on ITO-Coated PET". Polymers 16, n.º 2 (12 de janeiro de 2024): 218. http://dx.doi.org/10.3390/polym16020218.
Texto completo da fonteWen, Fei, Mian Qin, Paul Gratz e Narasimha Reddy. "Software Hint-Driven Data Management for Hybrid Memory in Mobile Systems". ACM Transactions on Embedded Computing Systems 21, n.º 1 (31 de janeiro de 2022): 1–18. http://dx.doi.org/10.1145/3494536.
Texto completo da fonteReuben, John, Dietmar Fey, Suzanne Lancaster e Stefan Slesazeck. "A Low-Power Ternary Adder Using Ferroelectric Tunnel Junctions". Electronics 12, n.º 5 (28 de fevereiro de 2023): 1163. http://dx.doi.org/10.3390/electronics12051163.
Texto completo da fonteSaraswat, Vivek, e Udayan Ganguly. "Stochasticity invariance control in Pr1−x Ca x MnO3 RRAM to enable large-scale stochastic recurrent neural networks". Neuromorphic Computing and Engineering 2, n.º 1 (28 de dezembro de 2021): 014001. http://dx.doi.org/10.1088/2634-4386/ac408a.
Texto completo da fonteAsad, Arghavan, Mahdi Fazeli, Mohammad Reza Jahed-Motlagh, Mahmood Fathy e Farah Mohammadi. "An Energy-Efficient Reliable Heterogeneous Uncore Architecture for Future 3D Chip-Multiprocessors". Journal of Circuits, Systems and Computers 28, n.º 13 (12 de março de 2019): 1950224. http://dx.doi.org/10.1142/s0218126619502244.
Texto completo da fonteChen, An. "(Invited, Digital Presentation) Emerging Materials and Devices for Energy-Efficient Computing". ECS Meeting Abstracts MA2022-01, n.º 19 (7 de julho de 2022): 1073. http://dx.doi.org/10.1149/ma2022-01191073mtgabs.
Texto completo da fonteRashid Mahmood, Muhammad Imran e Sayyid Kamran Hussain. "Assessment of Network & Processor Virtualization in Cloud Computing". Journal of Computing & Biomedical Informatics 2, n.º 01 (15 de março de 2021): 111–27. http://dx.doi.org/10.56979/201/2021/26.
Texto completo da fonteAhmed, Soyed Tuhin, Kamal Danouchi, Michael Hefenbrock, Guillaume Prenat, Lorena Anghel e Mehdi B. Tahoori. "SpinBayes: Algorithm-Hardware Co-Design for Uncertainty Estimation Using Bayesian In-Memory Approximation on Spintronic-Based Architectures". ACM Transactions on Embedded Computing Systems 22, n.º 5s (9 de setembro de 2023): 1–25. http://dx.doi.org/10.1145/3609116.
Texto completo da fonteFeng, Guangdi, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong et al. "A ferroelectric fin diode for robust non-volatile memory". Nature Communications 15, n.º 1 (13 de janeiro de 2024). http://dx.doi.org/10.1038/s41467-024-44759-5.
Texto completo da fontePiccinini, Enrico. "Editorial: Emerging non-volatile memories and beyond: From fundamental physics to applications". Frontiers in Physics 10 (13 de setembro de 2022). http://dx.doi.org/10.3389/fphy.2022.1006756.
Texto completo da fonteSivakumar, S., John Jose e Vijaykrishnan Narayanan. "Enhancing Lifetime and Performance of MLC NVM Caches using Embedded Trace buffers". ACM Transactions on Design Automation of Electronic Systems, 16 de abril de 2024. http://dx.doi.org/10.1145/3659102.
Texto completo da fonteJangra, Payal, e Manoj Duhan. "Performance-based comparative study of existing and emerging non-volatile memories: a review". Journal of Optics, 23 de dezembro de 2022. http://dx.doi.org/10.1007/s12596-022-01058-w.
Texto completo da fonteKhurana, Geetika, Nitu Kumar, Manish Chhowalla, James F. Scott e Ram S. Katiyar. "Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication". Scientific Reports 9, n.º 1 (22 de outubro de 2019). http://dx.doi.org/10.1038/s41598-019-51538-6.
Texto completo da fonteYang, Fang, Hong Kuan Ng, Xin Ju, Weifan Cai, Jing Cao, Dongzhi Chi, Ady Suwardi et al. "Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials". Advanced Functional Materials, fevereiro de 2024. http://dx.doi.org/10.1002/adfm.202310438.
Texto completo da fonteAmouroux, J., V. Della Marca, E. Petit, D. Deleruyelle, M. Putero, Ch Muller, P. Boivin et al. "Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories". MRS Proceedings 1337 (2011). http://dx.doi.org/10.1557/opl.2011.975.
Texto completo da fontePuglisi, Francesco Maria, Tommaso Zanotti e Paolo Pavan. "Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories". IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 1–11. http://dx.doi.org/10.1109/tcsi.2021.3079986.
Texto completo da fonteRyu, Hojoon, Haonan Wu, Fubo Rao e Wenjuan Zhu. "Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing". Scientific Reports 9, n.º 1 (dezembro de 2019). http://dx.doi.org/10.1038/s41598-019-56816-x.
Texto completo da fonteYin, Shong, Steven K. Volkman e Vivek Subramanian. "Solution Processed Silver Sulfide Filament Memories". MRS Proceedings 1113 (2008). http://dx.doi.org/10.1557/proc-1113-f02-09.
Texto completo da fonteNagarajan, Karthikeyan, Mohammad Nasim Imtiaz Khan e Swaroop Ghosh. "ENTT/ENTTR: A Family of Improved Emerging NVM-Based Trojan Triggers and Resets". Frontiers in Nanotechnology 4 (20 de abril de 2022). http://dx.doi.org/10.3389/fnano.2022.822017.
Texto completo da fonteShen, Yang, He Tian, Yanming Liu, Fan Wu, Zhaoyi Yan, Thomas Hirtz, Xuefeng Wang e Tian-Ling Ren. "Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications". Frontiers in Physics 9 (24 de dezembro de 2021). http://dx.doi.org/10.3389/fphy.2021.777691.
Texto completo da fonteParra, Jorge, Juan Navarro-Arenas, Miroslavna Kovylina e Pablo Sanchis. "Impact of GST thickness on GST-loaded silicon waveguides for optimal optical switching". Scientific Reports 12, n.º 1 (13 de junho de 2022). http://dx.doi.org/10.1038/s41598-022-13848-0.
Texto completo da fonteRietz, Vincent, Christopher Münch, Mahta Mayahinia e Mehdi Tahoori. "Timing-accurate simulation framework for NVM-based compute-in-memory architecture exploration". it - Information Technology, 3 de maio de 2023. http://dx.doi.org/10.1515/itit-2023-0019.
Texto completo da fonteChen, Bo, Chengcheng Wang, Xuepeng Zhan, Shuhao Wu, Lu Tai, Junyao Mei, Jixuan Wu e Jiezhi Chen. "Sub-10nm HfZrO ferroelectric synapse with multiple layers and different ratios for neuromorphic computing". Nanotechnology, 19 de setembro de 2023. http://dx.doi.org/10.1088/1361-6528/acfb0c.
Texto completo da fontede Moura, Rafael Fão, João Paulo Cardoso de Lima e Luigi Carro. "Data and Computation Reuse in CNNs using Memristor TCAMs". ACM Transactions on Reconfigurable Technology and Systems, 20 de julho de 2022. http://dx.doi.org/10.1145/3549536.
Texto completo da fonteVerma, Gaurav, Sandeep Soni, Arshid Nisar Laway e Brajesh Kumar Kaushik. "Multi-bit MRAM based high performance neuromorphic accelerator for image classification". Neuromorphic Computing and Engineering, 20 de fevereiro de 2024. http://dx.doi.org/10.1088/2634-4386/ad2afa.
Texto completo da fonteAhmed, Soyed Tuhin, Mahta Mayahinia, Michael Hefenbrock, Christopher Münch e Mehdi B. Tahoori. "Design-Time Reference Current Generation for Robust Spintronic-Based Neuromorphic Architecture". ACM Journal on Emerging Technologies in Computing Systems, 27 de setembro de 2023. http://dx.doi.org/10.1145/3625556.
Texto completo da fonteChen, Lei, Jiacheng Zhao, Chenxi Wang, Ting Cao, John Zigman, Haris Volos, Onur Mutlu et al. "Unified Holistic Memory Management Supporting Multiple Big Data Processing Frameworks over Hybrid Memories". ACM Transactions on Computer Systems, 4 de fevereiro de 2022. http://dx.doi.org/10.1145/3511211.
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