Artigos de revistas: "Electrical measurements C-V and G-V"

1

Özden, Şadan, Ömer Güllü e Osman Pakma. "Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices". European Physical Journal Applied Physics 82, n.º 2 (maio de 2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.

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The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.

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Padma, R., e V. Rajagopal Reddy. "Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode". Физика и техника полупроводников 51, n.º 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.

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The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

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Faraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur e Qamar Ul Wahab. "Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode". Advances in Condensed Matter Physics 2020 (13 de abril de 2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.

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The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.

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Padovani, Andrea, Ben Kaczer, Milan Pesic, Attilio Belmonte, Mihaela Popovici, Laura Nyns, Dimitri Linten et al. "A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements". IEEE Transactions on Electron Devices 66, n.º 4 (abril de 2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.

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Pananakakis, G., e G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science Letters 168, n.º 1-3 (março de 1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.

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Pananakakis, G., e G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science 168, n.º 1-3 (março de 1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.

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Altındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik e Yashar Azizian-Kalandaragh. "Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation". Physica Scripta 96, n.º 12 (1 de dezembro de 2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.

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Abstract The effect of 60Co-iradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs have been investigated using the current-voltage (I–V) and capacitance/conductance-voltage (C/G–V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifying-rate (RR) were extracted from the I–V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (Nss) versus energy (Ec–Ess) profile was extracted from I–V data considering voltage-dependent of n and BH using Card-Rhoderick method. Secondly, the doping-donor atoms (Nd), Fermi-energy (EF), BH, maximum electric-field (Em), and depletion-layer width (Wd) were extracted from the linear-part of reverse-bias C−2–V plot for 100 kHz before and after irradiation. Finally, the voltage-dependent profiles of Rs and radiation-induced of Nss were extracted from the C/G–V plots by using Nicollian-Brews and the difference between C–V plots before and after irradiation, respectively. The peak behavior in the Nss–V plots and shifts in its position was attributed to special-distribution of Nss at (ZnOMn:PVP)/n-Si interface and restructure/reordering of them under radiation and electric field. Experimental results show that gamma-irradiation is more effective both on the I–V and C/G–V plots or electrical parameters, and hence the fabricated Au/(ZnOMn:PVP)/n-Si SDs can be used as a radiation-sensor.

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Koliakoudakis, C., J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou e Konstantinos Zekentes. "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC". Materials Science Forum 615-617 (março de 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.

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The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.

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Afandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva e Sh G. Askerov. "The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements". Microelectronic Engineering 85, n.º 2 (fevereiro de 2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.

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Giannazzo, Filippo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger e Heiko B. Weber. "Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts". Materials Science Forum 778-780 (fevereiro de 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.

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Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

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DAŞ, Elif. "Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode". Sakarya University Journal of Science 26, n.º 5 (20 de outubro de 2022): 1000–1009. http://dx.doi.org/10.16984/saufenbilder.1129742.

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In this study, polythiophene-graphene (PTh-G) composite thin film was prepared on the n-type silicon (n-Si) semiconductor wafer by the spin coating method. Subsequently, the current-voltage (I-V) measurements were made on the fabricated Au/PTh-G/n-Si/Al device to ascertain the impact of the PTh-G interfacial layer on the device performance. The main device parameters such as ideality factor (n), barrier height (b), series resistance (Rs) were calculated by using the thermionic emission (TE) and Norde functions, and then, the obtained results were discussed in detail. Additionally, the capacitance-voltage (C-V) characteristic of the device was examined as a function of the frequency, and the device parameters such as diffusion potential (Vd), Fermi energy level (Ef), carrier concentration (Nd), b were detemined. Finally, the light intensity-dependent I-V measurements were taken to obtain information about the photoelectrical characteristics of the fabricated device. The obtained results have shown that the prepared composite material has a good potential to be used in optoelectronic applications such as photodiode, and photodetector.

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Kaya, A., Ö. Sevgili e Ş. Altındal. "Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method". International Journal of Modern Physics B 28, n.º 17 (29 de maio de 2014): 1450104. http://dx.doi.org/10.1142/s0217979214501045.

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Au /n-type 4H - SiC diodes were fabricated and their electrical characteristics have been investigated by using the capacitance/conductance-voltage-frequency (C–V–f and G/w–V–f) measurements method at room temperature. The main parameters such as the doping atoms (ND), diffusion potential (VD) and barrier height (ΦB(C–V)) values were obtained from the reverse bias C-2–V plots for each frequency. C and G/ω values decrease with increasing frequency as almost exponential for each voltage and these changes in C and G/ω are considerably high at low frequencies due to the contribution of surface states (Nss) to the measured C and G/ω. The resistivity (Ri) versus V plots were also obtained by using the C and G data and they exhibit an anomalous peak which is corresponding to the depletion region at each frequencies and its magnitude decreases with increasing frequency. The energy density distribution of Nss and their relaxation time (τ) were obtained from the conductance method and they range from 1.53 × 1014 eV-1 cm-2 to 1.03 × 1014 eV-1 cm-2 and 1.29 × 10-4 s to 3.35 × 10-5 s, respectively, in the energy range of (0.585-Ev) – (0.899-Ev) eV. The voltage dependent of Nss was also obtained from C HF – C LF method. The obtained value of Nss is about 1014 eV-1 cm-2 order and these values are suitable for an electronic device.

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Mazurak, Andrzej, Jakub Jasin´ski e Bogdan Majkusiak. "Determination of border/bulk traps parameters based on (C-G-V) admittance measurements". Journal of Vacuum Science & Technology B 37, n.º 3 (maio de 2019): 032904. http://dx.doi.org/10.1116/1.5060674.

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Güler, G., Ö. Güllü, S. Karataş e Ö. F. Bakkaloǧlu. "Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I – V and C – V Measurements". Chinese Physics Letters 26, n.º 6 (junho de 2009): 067301. http://dx.doi.org/10.1088/0256-307x/26/6/067301.

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Demirbilek, Nihat, Fahrettin Yakuphanoğlu e Mehmet Kaya. "Structural and optical properties of pure ZnO and Al/Cu co-doped ZnO semiconductor thin films and electrical characterization of photodiodes". Materials Testing 63, n.º 3 (1 de março de 2021): 279–85. http://dx.doi.org/10.1515/mt-2020-0042.

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Abstract Nano-structured semiconductor thin films and p-type Si photodiodes were fabricated with the sol-gel spin coating technique using pure ZnO and co-doped ZnO:Alx:Cuy with x = 1 at.-%, y = 1, 2, 3, 5 at.-%. The structural and optical properties of thin films were examined using an XRD and a UV-spectrophotometer. The thin films have a hexagonal wurtzite crystal structure, and their optical band gap energies decrease with increasing Cu contribution. The electrical properties of photodiodes were assessed via I-V, C-V, (G/ω)-V and phototransient current (I-t, C-t) measurements. The Φ b(I-V), experimental zero-bias barrier height, rectification ratio, ideality factor and Ion/Ioff parameters of the diodes were calculated using thermoionic emission model. In addition, Φ b(C-V), barrier height, Vbi, built-in voltage, Vd, diffusion potential, Nd, donor concentration and Wd, depletion layer width of p-Si/ZnO:Alx:Cuy (x = 1 at.-%, y = 1 at.-%.) photodiodes were obtained using a C-2-V graph plotted at 1 MHz frequency. The photodiodes exhibit rectifying and photosensitive behaviors, and their reverse bias current increases with increasing light intensity. These results indicate that produced diodes can be employed as photodiodes or photosensors in optoelectronic circuits and electronic devices.

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Özdemir, Orhan, Beyhan Tatar, Deneb Yılmazer, Pınar Gökdemir e Kubilay Kutlu. "Correlation of DC and AC electrical properties of Al/p-Si structure by I–V–T and C(G/ω)–V–T measurements". Materials Science in Semiconductor Processing 12, n.º 4-5 (agosto de 2009): 133–41. http://dx.doi.org/10.1016/j.mssp.2009.09.005.

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Çetinkaya, H. G., D. E. Yıldız e Ş. Altındal. "On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity". International Journal of Modern Physics B 29, n.º 01 (18 de dezembro de 2014): 1450237. http://dx.doi.org/10.1142/s0217979214502373.

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In order to see the effect of interfacial layer on electrical characteristics both Au /n–4 H – SiC (MS) and Au/TiO 2/n–4 H – SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated and their main electrical parameters were investigated by using the forward and reverse bias current-voltage (I–V), capacitance/conductance-voltage (C/G–V) measurements at room temperature. The ideality factor (n), series and shunt resistances (Rs, Rsh), barrier height (BH), depletion layer width (WD) and the concentration of donor atoms (ND) were obtained before and after illumination. The energy density distribution profile of surface states (Nss) was also obtained by taking into account voltage dependent effective BH (Φe) and ideality factor (nV). All of these experimental results confirmed that the use of a high dielectric material or insulator layer ( TiO 2) between metal and semiconductor leads to improvements in the diode performance in terms of Rs, Rsh, BH, Nss and rectifier rate (RR = IF/IR for sufficiently high forward and reverse current). Another important result is the negative capacitance (NC) behavior observed in the forward bias C–V plot for the Au /n–4 H – SiC (MS) diode, but it disappears in Au/TiO 2/n–4 H – SiC (MIS) diode and also the minimum value of C–V plot corresponds to maximum value of G/ω–V plot in the accumulation region. Such behavior of NC shows that the material displays an inductive behavior.

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Thi, Tran Anh Tuan, Dong-Hau Kuo, Phuong Thao Cao, Pham Quoc-Phong, Vinh Khanh Nghi e Nguyen Phuong Lan Tran. "Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode". Coatings 9, n.º 10 (21 de outubro de 2019): 685. http://dx.doi.org/10.3390/coatings9100685.

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The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of the electrodes, insulator SiO2 layer, and p-GaN were found to be ~250 nm, 70 nm, and 1 µm, respectively. By Hall measurement of a p-Mg-GaN film on an SiO2/Si (100) substrate at room temperature, the hole’s concentration (Np) and carrier mobility (μ) were found to be Np = 4.32 × 1016 cm−3 and μ = 7.52 cm2·V−1·s−1, respectively. The atomic force microscope (AFM) results showed that the surface topography of the p-GaN film had smoother, smaller grains with a root-mean-square (rms) roughness of 3.27 nm. By I–V measurements at room temperature (RT), the electrical properties of the diode had a leakage current of ~4.49 × 10−8 A at −1 V, a breakdown voltage of −6 V, a turn-on voltage of ~2.1 V, and a Schottky barrier height (SBH) of 0.67 eV. By C–V measurement at RT, with a frequency range of 100–1000 KHz, the concentration of the diode’s hole increased from 3.92 × 1016 cm−3 at 100 kHz to 5.36 × 1016 cm−3 at 1 MHz, while the Fermi level decreased slightly from 0.109 to 0.099 eV. The SBH of the diode at RT in the C–V test was higher than in the I–V test because of the induced charges by dielectric layer. In addition, the ideality factor (n) and series resistance (Rs) determined by Cheung’s and Norde’s methods, other parameters for MOS diodes were also calculated by C–V measurement at different frequencies.

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Khelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida e Jamal Bougdira. "Realization and Characterization of CH₃NH₃PbI₃ /c-Si Heterojunction". Defect and Diffusion Forum 406 (janeiro de 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.

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In the present work we have reported the realization and characterization of CH3NH3PbI3/c-Si heterojunction. It was achieved by deposing CH3NH3PbI3 perovskite film on (P) doped single crystalline Silicon (c-Si) substrate by spin coating. The structural, optical and electrical properties of perovskite film were investigated. The electric characterization of the realized device was achieved through I-V and G-f measurements. The recorded I-V characteristic exhibits a rectifier behavior. This curve was used also to determine diode parameters; the ideality factor, the saturation current, the series resistance and the potential barrier. However, the conductance method was used to assess the interface state Nss via (G/ω) versus angular frequency ω curve. The results were used to justify the large values of the ideality factor and the series resistance.

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Khelfaoui, Fatima, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida e Jamal Bougdira. "Realization and Characterization of CH₃NH₃PbI₃ /c-Si Heterojunction". Defect and Diffusion Forum 406 (janeiro de 2021): 364–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.406.364.

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In the present work we have reported the realization and characterization of CH3NH3PbI3/c-Si heterojunction. It was achieved by deposing CH3NH3PbI3 perovskite film on (P) doped single crystalline Silicon (c-Si) substrate by spin coating. The structural, optical and electrical properties of perovskite film were investigated. The electric characterization of the realized device was achieved through I-V and G-f measurements. The recorded I-V characteristic exhibits a rectifier behavior. This curve was used also to determine diode parameters; the ideality factor, the saturation current, the series resistance and the potential barrier. However, the conductance method was used to assess the interface state Nss via (G/ω) versus angular frequency ω curve. The results were used to justify the large values of the ideality factor and the series resistance.

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Alexandrova, S., e A. Szekeres. "Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon". Solid State Phenomena 159 (janeiro de 2010): 163–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.159.163.

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In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thickness was found, below which the oxide structure is different from SiO2, most probably SiOх. It is related to a modified Si surface during the pre-oxidation plasma treatment and its value depends on Si orientation and pre-clean conditions. A characteristic oxide thickness of 13 nm was found for Si hydrogenated without heating and, of 9 nm for Si hydrogenated at 300oC.

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Cañas, J., C. Dussarrat, T. Teramoto, C. Masante, M. Gutierrez e E. Gheeraert. "High quality SiO₂/diamond interface in O-terminated p-type diamond MOS capacitors". Applied Physics Letters 121, n.º 7 (15 de agosto de 2022): 072101. http://dx.doi.org/10.1063/5.0103037.

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Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-type (100) oriented diamond and SiO2 grown by atomic layer deposition. A detailed electrical characterization consisting of I–V, C–V, and C–F was performed in order to analyze the electrical properties of the structure. The MOS capacitor presented no detectable leakage current in forward and very low leakage current in reverse sustaining at least 6 MV/cm without degradation. The C–V measurements showed depletion and deep depletion regimes in forward and accumulation regimes in reverse, with a low density of interface states of [Formula: see text] along the diamond bandgap. The latter results were further validated by conductance and capacitance vs frequency measurements.

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HIROSE, Fumihiko, Yasuo KIMURA e Michio NIWANO. "P3HT/Al Organic/Inorganic Heterojunction Diodes Investigated by I-V and C-V Measurements". IEICE Transactions on Electronics E92-C, n.º 12 (2009): 1475–78. http://dx.doi.org/10.1587/transele.e92.c.1475.

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Ryu, K., I. Kymissis, V. Bulovic e C. G. Sodini. "Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements". IEEE Electron Device Letters 26, n.º 10 (outubro de 2005): 716–18. http://dx.doi.org/10.1109/led.2005.854394.

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Kabra, Vinay, Lubna Aamir e M. M. Malik. "Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization". Beilstein Journal of Nanotechnology 5 (24 de novembro de 2014): 2216–21. http://dx.doi.org/10.3762/bjnano.5.230.

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A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

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Nakano, Yoshitaka, Liwen Sang e Masatomo Sumiya. "Electrical Characterization of Thick InGaN Films for Photovoltaic Applications". MRS Proceedings 1635 (2014): 29–34. http://dx.doi.org/10.1557/opl.2014.205.

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ABSTRACTWe have electrically characterized a 300 nm-thick unintentionally-doped In0.09Ga0.91N film grown by metal-organic chemical vapor deposition on a GaN template, employing capacitance-voltage (C-V), thermal admittance spectroscopy (TAS), and steady-state photocapacitance spectroscopy (SSPC) techniques on Schottky barrier diodes. TAS measurements revealed a degenerating-like shallow-donor defect with a thermal activation energy of ∼7 meV, which most likely acts as a source of residual carriers with their concentration of ∼1017 cm-3 determined from C-V measurements. Additionally, SSPC measurements revealed two characteristic deep-level defects located at ∼2.07 and ∼3.05 eV below the conduction band, which were densely enhanced near the underlayer. These electronic defects are probably introduced by alloying InN with GaN.

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De Cogan, D., e A. Alani. "Double-resonance technique for C/V measurements of semiconductor devices". Electronics Letters 21, n.º 24 (1985): 1153. http://dx.doi.org/10.1049/el:19850816.

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Bahari, Ali, Masoud Ebrahimzadeh e Reza Gholipur. "Structural and electrical properties of zirconium doped yttrium oxide nanostructures". International Journal of Modern Physics B 28, n.º 16 (13 de maio de 2014): 1450102. http://dx.doi.org/10.1142/s0217979214501021.

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A synthetic process for the formation of Zr x Y 1-x O y nanostructures is demonstrated by the reaction of yttrium nitrate hexahydrate with zirconium propoxide. The reactions are carried out at temperature 60°C and pressure 0.1 MPa. The energy dispersive X-ray (EDX) spectroscopy measurements confirm formation of Zr x Y 1-x O y nanostructures and the presence of carbonate and hydroxide species which are removed after high temperature anneals. It was found that the oxygen pressure during synthesis plays a determinant role on the structural properties of the nanostructure. This effect is further studied by atomic force microscopy (AFM) measurements and scanning electron microscope (SEM), which showed the formation of an isotopically organized structure. X-ray diffraction (XRD) measurement reveals that these changes in the nanostructural efficiency are associated with structural and compositional changes among the substrate. The dielectric constant as measured by the capacitance–voltage (C–V) technique is estimated to be around 39.05. C–V measurements taken at 1 MHz show the maximum capacitance for the Zr 0.05 Y 0.95 O y film. The leakage current densities were below 10-5 A/cm2 for the Zr 0.05 Y 0.95 O y film.

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Belkouch, S., L. Paquin, A. Deneuville e E. Gheeraert. "Caractérisation physicochimique et électronique de la structure Pt–a-Si: H–c-Si(n)". Canadian Journal of Physics 69, n.º 3-4 (1 de março de 1991): 357–60. http://dx.doi.org/10.1139/p91-060.

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Infrared absorption spectra, and electrical measurements I(V, T) and C(V) at 100 Hz of the Pt–a-Si:H–c-Si structure are presented. The thickness, d, of the hydrogenated amorphous silicium, a-Si:H, varies between 4800 and 180 Å(1 Å = 10−10 m). Infrared absorption measurements on a-Si:H show that with the decrease in d there is an increase in the number of defects and the hydrogen concentration on Si-H sites. The electrical results I(V, T) show a Schottky-like structure whose ideality factor increases with decreasing T, but remains limited even for small values of d (1.4 at 300 K for d = 180 Å). Two potential barriers are also deduced: at high temperature [Formula: see text] and is independent of d. This barrier is attributed to the Pt–a-Si:H interface. At low temperature, [Formula: see text] increases from 0.23 to 0.5 eV as d decreases from 2400 to 180 Å. This barrier is attributed to the a-Si = H–c-Si, interface, the transport in a-Si:H taking place by tunnelling between localized states. The C(V) measurements allow the separation between the c-Si and the a-Si:H responses. Above 100 kHz, there is no response from a-Si:H, which behaves then as a dielectric. The electrostatic potential drop in c-Si is deduced as a function of the applied voltage V for each value of d. A positive electrostatic potential is found when V = 0 for d ≤ 500 Å.[Journal translation]

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Bita, Bogdan, Sorin Vizireanu, Daniel Stoica, Valentin Ion, Sasa Yehia, Adrian Radu, Sorina Iftimie e Gheorghe Dinescu. "On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition". Journal of Nanomaterials 2020 (1 de outubro de 2020): 1–6. http://dx.doi.org/10.1155/2020/8814459.

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In this study, we investigated the morphological, structural, and electrical properties of carbon nanowall (CNW) structures obtained by plasma-enhanced chemical vapour deposition (PECVD) and underlined the induced effects of argon/nitrogen (Ar/N2) postsynthesis plasma treatment on the electrical behaviour. The top view and cross-section scanning electron microscopy micrographs revealed that the fabricated samples are about 18 μm height, and the edges are less than 10 nm. The Raman analysis showed the presence of the specific peaks of graphene-based materials, i.e., D-band, G-band, D′-band, 2D-band, and D+G-band. The average values of the electrical resistance of fabricated samples were evaluated by current-voltage characteristics acquired at room temperature, in the ranges of 0 V–0.2 V, and an increase was noticed with about 50% after the Ar/N2 postsynthesis plasma treatment compared to pristine samples. Moreover, the Hall measurements proved that the obtained CNW structures had p-type conductivity (Hall coefficient was 0.206 m3/C), and the concentration of charge carriers was 7.8×1019 cm-3, at room temperature.

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Alisha, P. Chander, V. K. Malik e R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films". Journal of Physics: Conference Series 2518, n.º 1 (1 de junho de 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.

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Abstract In the present study, SiC films are fabricated by a cost-effective and simple approach of RF magnetron sputtering. The fabrication of SiC thin films is carried out at 900 °C in 5mT Ar atmosphere at 150W power. Thus, the thin films are produced at lower temperature and toxic free environment than conventional methods. The structural characterizations of thin films are performed using XRD, XPS, FE-SEM and EDS techniques. A Metal-Semiconductor-Metal (MSM) junction is fabricated using gold electrodes by shadow sputtering in point contact geometry. The electrical transport properties of the SiC thin film are analyzed using Current-voltage (I-V) and Capacitance-Voltage-Frequency (C-V-F) measurements. The anomalous peaks observed in C-V characteristics and non-ideal behavior of I-V characteristics provide important information about electronic properties and structural aspects of fabricated thin film.

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Tokusu, Toji, Hirokazu Miyabayashi, Yuji Hiruma, Hajime Nagata e Tadashi Takenaka. "Electrical Properties and Piezoelectric Properties of CaBi₂Ta₂O₉-Based Ceramics". Key Engineering Materials 421-422 (dezembro de 2009): 46–49. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.46.

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Electrical and piezoelectric properties of CaBi2Ta2O9-based ceramics have been studied. Temperature dependence of dielectric properties indicated that the Curie temperature, TC, was 923°C. Coercive field, EC, and remanent polarization, Pr, became saturated with increasing temperature. It is expected that higher-temperature than 250°C could promote the domain wall motion during the poling treatment. From resonance and antiresonance measurements, piezoelectric properties such as the maximum phase, max, electromechanical coupling factor, k33, and piezoelectric g constant, g33, were 86.1º, 0.085 and 8.4 × 10-3 V∙m/N, at room temperature, respectively.

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Zhang, Shiyu, Zeng Liu, Yuanyuan Liu, Yusong Zhi, Peigang Li, Zhenping Wu e Weihua Tang. "Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes". Micromachines 12, n.º 3 (3 de março de 2021): 259. http://dx.doi.org/10.3390/mi12030259.

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In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (Ron), Schottky barrier height (ϕB), the ideal factor (n), series resistance (Rs) and the carrier concentration (Nd) by analyzing the current density–voltage (J–V) and capacitance–voltage (C–V) curves of the Ga2O3-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.

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ALI, A. N. M., e E. M. NASIR. "CHARACTERIZATION OF (ZnO)1-X-(CuO)x/GaAs HETEROJUNCTION SOLAR CELL GROWN BY PULSED LASER DEPOSITION". Digest Journal of Nanomaterials and Biostructures 16, n.º 1 (janeiro de 2021): 169–74. http://dx.doi.org/10.15251/djnb.2021.161.169.

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ZnO)1-X-(CuO)x composite films with different x content (0.2, 0.4, 0.6, and 0.8) were prepared through pulse laser deposition method at room temperatures (RT). The (ZnO)1-X- (CuO)x film was deposited on GaAs substrate to form the (ZnO)1-X-(CuO)x / GaAs heterojunction. The influence of varying x content (0.2, 0.4, 0.6, and 0.8) wt.% on characterization of (ZnO)1-X-(CuO)x /GaAs heterojunction solar cell have been investigated. electrical properties of C-V measurements at two frequencies (100, 200) kHz and I-V measurements under dark and light condition have been studied, C-V measurements for heterojunctions show an increment in built in voltage (Vbi) with increasing x content. I-V measurement for heterojunctions show that the approach of forward current is coincides with mechanism of the recombination- tunneling. The open circuit voltage (Voc), short-circuit current (Isc), and fill factor (F.F) have been studied, The best achieved efficiency was obtained around 5.7% at (x=0.2,) also the value efficiency for (ZnO)1-X-(CuO)x/ GaAs heterojunction decreases with increasing x content for all samples.

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Kumar, Neeraj, e Rabinder Nath. "Ferroelectric and Electrical Properties of Potassium Nitrate Thin Composite Layers". Advanced Materials Research 403-408 (novembro de 2011): 607–17. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.607.

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The ferroelectric and electrical properties of potassium nitrate (KNO3): polyvinylidene fluoride (PVDF) composite layers prepared by melt press method have been studied. The stability of ferroelectric phase (phase –III) of potassium nitrate (KNO3) in the composite layers at room temperature have been analyzed. The temperature dependence of ferroelectric hysteresis loop (P-E) characteristics have been investigated in the composite layers. The electrical conductivity (σ) and dielectric behaviour of composite layers have been characterized. The conductivity and dielectric variation with temperature during heating and cooling modes has been found to provide the knowledge of phase transition in the composite. The capacitance –-voltage (C-V) and conductance - voltage (G-V) characteristics clearly show the ferroelectric butterfly loop, which is attributed to the features of ferroelectricity in the composite layers at room temperature. The coexistence of ferroelectric phase (phase III) with paraelectric phase (phase II) has also been observed at room temperature in the composite layers during dielectric and conductivity measurements.

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Selçuk, A. H., E. Orhan, S. Bilge Ocak, A. B. Selçuk e U. Gökmen. "Investigation of dielectric properties of heterostructures based on ZnO structures". Materials Science-Poland 35, n.º 4 (20 de março de 2018): 885–92. http://dx.doi.org/10.1515/msp-2017-0108.

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Abstract The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.

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Karataş, Ş., Ş. Altındal, A. Türüt e M. Çakar. "Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements". Physica B: Condensed Matter 392, n.º 1-2 (abril de 2007): 43–50. http://dx.doi.org/10.1016/j.physb.2006.10.039.

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Thompson, J. R., J. J. Dubowski e D. J. Northcott. "Electrical characterization of CdTe–InSb heterojunctions". Canadian Journal of Physics 69, n.º 3-4 (1 de março de 1991): 274–77. http://dx.doi.org/10.1139/p91-046.

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Planar and vertical transport studies were carried out on samples of epitaxial (001) CdTe grown by pulsed laser evaporation and epitaxy on n- and p-type (001) InSb substrates. Characterization was performed in the temperature range of 4.2–300 K, including Hall effect, current–voltage, and capacitance–voltage measurements. Ohmic contacts to intrinsic CdTe were obtained by application of a AuCl3, aqueous solution. Similar contacts on grown layers showed no Schottky-barrier characteristics. Layers on n-type substrates did not exhibit rectification. Hall effect and resistivity measurements using contacts to the epilayer are in agreement with bulk n-InSb for the range 120–300 K. Below 120 K current dependence in the measured resistivity is observed with a saturation value at low currents, indicating confinement of the transport to the epilayer. CdTe–p-InSb junctions exhibit rectification characteristics below 80 K with C–V measurements yielding a barrier height of 0.17 V. Hall measurements with contacts to the epilayer showed erratic Hall-voltage measurements, but substrate contacts indicate conduction through InSb implying a depleted layer. Estimated electron concentration and mobility in the CdTe layer are n > 8 × 1016 cm−3, and u ~ 104 cm2 V−1 s−1.This indicates that n-type doping of the CdTe layers, possibly due to the incorporation of In, may take place even at the lowest growth temperature.

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39

Porter, L. M., R. F. Davis, J. S. Bow, M. J. Kim, R. W. Carpenter e R. C. Glass. "Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)". Journal of Materials Research 10, n.º 3 (março de 1995): 668–79. http://dx.doi.org/10.1557/jmr.1995.0668.

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Epitaxial thin films (4–1000 Å) of Ti contacts have been deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type, alpha (6H)-SiC(0001). The interfacial chemistry and microstructure, and the electrical properties, were investigated at room temperature and after annealing at 700 °C up to 60 min. High resolution TEM analyses revealed the formation during annealing of reaction zones consisting of Ti5Si3 and TiC. The corresponding electrical properties exhibited considerable stability except after an initial 20 min anneal. Current-voltage (I-V) measurements showed that the Ti contacts were rectifying with low ideality factors (n < 1.09) and typical leakage currents of 5 × 10−7 A/cm2 at −10 V. The Schottky barrier heights calculated from x-ray photoelectron spectroscopy and I-V and V-V measurements were between 0.79 and 0.88 eV for the as-deposited contacts and between 0.86 and 1.04 eV for the annealed contacts.

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Stark, Roger, Alexander Tsibizov, Salvatore Race, Thomas Ziemann, Ivana Kovacevic-Badstubner e Ulrike Grossner. "Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements". Materials Science Forum 1092 (6 de junho de 2023): 165–70. http://dx.doi.org/10.4028/p-06b54k.

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SiC power MOSFETs show very promising electrical performance for efficient and reliable high temperature operation. This work presents a novel approach for the determination of the temperature dependence of SiC power MOSFET’s channel and drift resistance components in the on-state, which are extracted based on current-voltage (I-V) and capacitance-voltage (C-V) measurements without the need of data extrapolation. The results show that the channel resistance has weak, whereas the drift resistance has strong temperature dependence.

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Kim, Minyeong, Nolan Hendricks, Neil Moser, Pragya Shrestha, Sujitra Pookpanratana, Sang-Mo Koo e Qiliang Li. "Electrical Properties of Ga₂O₃ Schottky Barrier Diodes with and without Mesa Structure". ECS Meeting Abstracts MA2023-01, n.º 32 (28 de agosto de 2023): 1840. http://dx.doi.org/10.1149/ma2023-01321840mtgabs.

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Devices based on wide bandgap (WBG) semiconductors like silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga2O3) are ideal for high-power electronics in harsh environments. Among the WBG semiconductors, ultrawide bandgap (UWBG) β-phase gallium oxide (Ga2O3), EG ≈ 4.8 eV, is emerging as a replacement for the current commercially available wide bandgap (WBG) power electronics due to its generational improvements in performance and manufacturing cost [1]. Ga2O3 has a high theoretical breakdown electrical field of 8 MV/cm which in turn gives its Baliga’s figure of merit for power devices that is larger than other WBG materials. The availability of high-quality Ga2O3 substrates produced from melt-grown bulk single crystals also facilitates the development of vertical power devices. In the current stage, the vertical Schottky barrier diode (SBD) with Ga2O3 can have an improved current spreading effect when compared to power diode devices from Si, SiC, and GaN. Especially, the Ga2O3 is expected to surpass the trade-off relationship between breakdown voltage (BV) and on resistance (Ron,sp) that other materials have [2]. Nevertheless, the Ga2O3 vertical SBD still cannot achieve the theoretical breakdown electric field. One of the key topics for WBG semiconductors application is a structure for improved electrical management such as field rings, junction termination extension, and field plates to reduce the leakage current in the reverse bias state. Here, we investigate the characteristics of Ga2O3 SBDs with and without mesa structure in extreme environments at high and low temperature. Conventional and mesa Ga2O3 SBDs were fabricated on the halide vapor phase epitaxy (HVPE) grown β-Ga2O3 (001). A Sn-doped substrate with 61016 cm-3 was used for the HVPE growth. In the SBD with mesa structure, the circular mesa with a diameter of 162 μm and a depth of 500 nm was formed around anode electrodes. The Ti/Au metal stack on the back side of the substrate acted as a cathode and the anode electrode deposited Ni/Au/Pt layers. After the fabrication process, current-voltage (I-V) measurements were performed on the SBDs between -5 V and 1 V. From the results, the values of Ron,sp at 0.7 V are 46.4 Ω•cm2 and 46.2 Ω•cm2 in conventional and mesa SBDs, respectively. And additionally, the leakage current at -5 V is reduced by approximately 44.3% in the mesa structure. To obtain the Schottky barrier height (SBH) from I-V and capacitance-voltage (C-V) measurements, the C-V was observed in the range of -5 V to 0.5 V at 100 kHz. The SBH values from I-V and C-V measurements, the mesa SBDs have 1% - 5% larger SBH compared to the conventional structure, and it could be related to lower leakage current. Moreover, the depletion depths of conventional and mesa SBDs were 52.2 nm and 57.8 nm, respectively, from C-V measurements. For considering the electrical characteristics in extreme temperatures, the I-V measurements of both SBDs structure will be measured between 75 K to 525 K. From an initial low temperature measurement series, we determine a Richardson constant of 49 A/cm2 comparable to what has been reported by other groups. Furthermore, we will extend the study by performing deep-level transient spectroscopy (DLTS) to understand the defect information in Ga2O3. References [1] Pearton, S. J., Yang, J., Cary IV, P. H., Ren, F., Kim, J., Tadjer, M. J., & Mastro, M. A. (2018). A review of Ga2O3 materials, processing, and devices. Applied Physics Reviews, 5(1), 011301. [2] Higashiwaki, M., Sasaki, K., Murakami, H., Kumagai, Y., Koukitu, A., Kuramata, A., ... & Yamakoshi, S. (2016). Recent progress in Ga2O3 power devices. Semiconductor Science and Technology, 31(3), 034001.

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Pellegrino, Domenico, Lucia Calcagno, Massimo Zimbone, Salvatore Di Franco e Antonella Sciuto. "Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions". Materials 14, n.º 8 (14 de abril de 2021): 1966. http://dx.doi.org/10.3390/ma14081966.

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In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

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Umar, Marjoni Imamora Ali. "Graphene-Au Film Synthesized from GrO in Au-Aquaeus Solution as Counter Electrode For DSSC Application". Lensa: Jurnal Kependidikan Fisika 7, n.º 2 (31 de dezembro de 2019): 24. http://dx.doi.org/10.33394/j-lkf.v7i2.2644.

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The study on the optical, electrical properties of multilayer graphene (MLG) obtained by thermal-reduction of graphene oxide (GrO) which was synthesized directly by mixing graphite oxide (GO) flake in 0.005, 0.01, 0.015, and 0.02 M of Au aqueous solution has been successfully performed. The resultant GrO was subjected to an annealing temperature of 200°C, 400°C, 500°C for 1h to obtain MLG, and G-Au2x, G-Au4x, and G-Au5x (x=.0.005, 0.01, 0.015, and 0.02). The resultant samples were then characterized using FESEM, UV-VIS, four-point probe measurements to study its morphology, optical, and electrical properties. The transmission G-Au increase and its sheet resistant decrease as an increase of annealing temperature. Besides, the annealing treatment was then achieved of its microstructure which is expected may be used as a counter electrode in solar cell applications. The best DSSC devices with Quartz/FTO/ZnO Nanorods/Dye/G-Au50.01/Quartz structures have resulted in current-density, Voc, and solar cell performance of 0.1 mA/cm2, 0.42 V, and 0.01%, respectively.

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Jungwirth, Felix, Daniel Knez, Fabrizio Porrati, Alfons G. Schuck, Michael Huth, Harald Plank e Sven Barth. "Vanadium and Manganese Carbonyls as Precursors in Electron-Induced and Thermal Deposition Processes". Nanomaterials 12, n.º 7 (28 de março de 2022): 1110. http://dx.doi.org/10.3390/nano12071110.

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The material composition and electrical properties of nanostructures obtained from focused electron beam-induced deposition (FEBID) using manganese and vanadium carbonyl precursors have been investigated. The composition of the FEBID deposits has been compared with thin films derived by the thermal decomposition of the same precursors in chemical vapor deposition (CVD). FEBID of V(CO)6 gives access to a material with a V/C ratio of 0.63–0.86, while in CVD a lower carbon content with V/C ratios of 1.1–1.3 is obtained. Microstructural characterization reveals for V-based materials derived from both deposition techniques crystallites of a cubic phase that can be associated with VC1−xOx. In addition, the electrical transport measurements of direct-write VC1−xOx show moderate resistivity values of 0.8–1.2 × 103 µΩ·cm, a negligible influence of contact resistances and signatures of a granular metal in the temperature-dependent conductivity. Mn-based deposits obtained from Mn2(CO)10 contain ~40 at% Mn for FEBID and a slightly higher metal percentage for CVD. Exclusively insulating material has been observed in FEBID deposits as deduced from electrical conductivity measurements. In addition, strong tendencies for postgrowth oxidation have to be considered.

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Faraz, Sadia Muniza, Muhammed Naveed Alvi, Anne Henry, Omer Nour, Magnus Willander e Qamar Ul Wahab. "Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes". Advanced Materials Research 324 (agosto de 2011): 233–36. http://dx.doi.org/10.4028/www.scientific.net/amr.324.233.

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The effects of post fabrication annealing on the electrical characteristics of n-ZnO/p-Si heterostructure are studied. The nanorods of ZnO are grown by aqueous chemical growth (ACG) technique on p-Si substrate and ohmic contacts of Al/Pt and Al are made on ZnO and Si. The devices are annealed at 400 and 600 °C in air, oxygen and nitrogen ambient. The characteristics are studied by photoluminescence (PL), current–voltage (I-V) and capacitance - voltage (C-V) measurements. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) centered from 375-380 nm and very weak broad deep-level emissions (DLE) centered from 510-580 nm. All diodes show typical non linear rectifying behavior as characterized by I-V measurements. The results indicated that annealing in air and oxygen resulted in better electrical characteristics with a decrease in the reverse current.

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LEE, SEUNGJAE, e KIJUNG YONG. "SELF-LIMITING GROWTH OF TITANIUM SILICATE AND EFFECTS OF THERMAL ANNEALING ON THE ELECTRICAL PROPERTIES OF TITANIUM SILICATE/SiO2". Surface Review and Letters 14, n.º 05 (outubro de 2007): 921–25. http://dx.doi.org/10.1142/s0218625x07010433.

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Titanium silicate thin films were deposited using self-limiting atomic layer growth technique. Grown films showed smooth film surface morphology. As deposited, 8 nm-thick film surface showed an RMS value of 0.43 nm and annealed film showed a smoother surface having RMS of 0.2 nm. Electrical properties of titanium silicate/ SiO 2 bilayer were investigated using capacitance–voltage (C–V) and leakage current-voltage (I–V) measurements. The grown films showed high dielectric properties with low impurity contents and low leakage currents. Upon annealing at 800°C, capacitance slightly decreased, which is likely due to the interfacial reactions. Generally thermal annealing decreased hysteresis in C–V results.

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Devi, V. Lakshmi, I. Jyothi e V. Rajagopal Reddy. "Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP". Canadian Journal of Physics 90, n.º 1 (janeiro de 2012): 73–81. http://dx.doi.org/10.1139/p11-142.

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In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

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Idris, Muhammad I., Nick G. Wright e Alton B. Horsfall. "Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors". Materials Science Forum 924 (junho de 2018): 486–89. http://dx.doi.org/10.4028/www.scientific.net/msf.924.486.

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This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

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Yücedağ, İ., A. Kaya e Ş. Altındal. "On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC+TCNQ)/p-Si structures". International Journal of Modern Physics B 28, n.º 23 (13 de julho de 2014): 1450153. http://dx.doi.org/10.1142/s0217979214501537.

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The dielectric properties, electric modulus and ac electrical conductivity (σac) of Al / Co -doped (PVC+TCNQ)/p- Si structures have been investigated in the wide frequency and voltage range of 0.5 kHz–3 MHz and (-4 V)–(9 V), respectively, using the capacitance-voltage (C–V) and conductance-voltage (G/ω–V) measurements at room temperature. The real and imaginary parts of dielectric constant (ε′, ε″), loss tangent ( tan δ), σac and the real and imaginary parts of electric modulus (M′, M″) were found strongly function of frequency and applied voltage especially at low frequencies. The ε′–V plot shows an anomalous peak in the forward bias region due to the series resistance (Rs), surface states (Nss) and interfacial layer (PVC+TCNQ) effects for each frequency and then it goes to negative values known as negative dielectric constant (NDC) at low frequencies (f ≤ 70 kHz). Such observation of NDC is important result because it implies that an increment of bias voltage produces a decrease in the charge on the electrodes. The amount of negativity ε′ value increases with decreasing frequency and this decrement in the NDC corresponds to the increment in the ε″.

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Hong, J. H., e Jae Min Myoung. "Characteristics of HfO₂ Dielectric Layer Grown by MOMBE". Materials Science Forum 449-452 (março de 2004): 1005–8. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.1005.

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The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge 1transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels existence. Saturation capacitance and leakage current density were in the range of 207 ~ 249 pF and 0.52 ~ 0.58 A/cm2 respectively, and the flat band voltage shift to the higher voltage appeared as the oxygen flow rate increased.

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