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Artigos de revistas sobre o assunto "Electrical measurements C-V and G-V"
Özden, Şadan, Ömer Güllü e Osman Pakma. "Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices". European Physical Journal Applied Physics 82, n.º 2 (maio de 2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.
Texto completo da fontePadma, R., e V. Rajagopal Reddy. "Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode". Физика и техника полупроводников 51, n.º 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.
Texto completo da fonteFaraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur e Qamar Ul Wahab. "Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode". Advances in Condensed Matter Physics 2020 (13 de abril de 2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.
Texto completo da fontePadovani, Andrea, Ben Kaczer, Milan Pesic, Attilio Belmonte, Mihaela Popovici, Laura Nyns, Dimitri Linten et al. "A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements". IEEE Transactions on Electron Devices 66, n.º 4 (abril de 2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.
Texto completo da fontePananakakis, G., e G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science Letters 168, n.º 1-3 (março de 1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.
Texto completo da fontePananakakis, G., e G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements". Surface Science 168, n.º 1-3 (março de 1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.
Texto completo da fonteAltındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik e Yashar Azizian-Kalandaragh. "Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation". Physica Scripta 96, n.º 12 (1 de dezembro de 2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.
Texto completo da fonteKoliakoudakis, C., J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou e Konstantinos Zekentes. "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC". Materials Science Forum 615-617 (março de 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.
Texto completo da fonteAfandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva e Sh G. Askerov. "The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements". Microelectronic Engineering 85, n.º 2 (fevereiro de 2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.
Texto completo da fonteGiannazzo, Filippo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger e Heiko B. Weber. "Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts". Materials Science Forum 778-780 (fevereiro de 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.
Texto completo da fonteTeses / dissertações sobre o assunto "Electrical measurements C-V and G-V"
Mohamad, Blend. "Electrical characterization of fully depleted SOI devices based on C-V measurements". Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT001/document.
Texto completo da fonte.Thin film technologies appear as reliable solutions for Nano electronics to go beyond bulk silicon technology limits, allowing lower power bias and thus energy harvesting. Indeed, Metal Oxide Semiconductors transistors (MOSFETs) with fully depleted substrate (FDSOI for ’Fully Depleted Silicon On Insulator’) allow low static off-currents and variability improvement that enable the use of power supply biases lower than with bulk silicon, especially for SRAMs. From 14nm nodes, FDSOI generations are including SiGe channel, high-k dielectric and metal gate. All these new process modules required for technology improvement also significantly increase the complexity of the MOS devices electrical analysis and meanwhile its correlation with technology. This PhD study propose different novel methodologies for automatic and statistical parameter extraction of advanced FDSOI MOS gate stack. These methodologies are all based on capacitance versus voltage (C-V) characteristics, obtained for the capacitive coupling between metal gate, channel and back side. With such C-V characteristics, reliable methodologies are proposed, leading to the extractions of the equivalent oxide thicknesses (EOT), the effective work function of the FDSOI metal gate (WFeff), but also other parameters such as channel and buried oxide thicknesses (tch, tbox) and an effective electron affinity of the substrate well (Xeff) that includes all electrostatic effects in the buried oxide and at its interfaces. Moreover, quantum simulations are considered in order to validate the different methodologies. For experimental analysis, the study has considered coherence and complementarity of different test structures as well as the impact of back substrate polarization
Dřímalková, Lucie. "Elektrické charakteristiky diafragmového výboje v roztocích elektrolytů". Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2011. http://www.nusl.cz/ntk/nusl-216707.
Texto completo da fonteHaratek, Jiří. "Výpočet rozložení teplotního pole v elektrickém stroji". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-318865.
Texto completo da fonteHorák, Luděk. "Analýza elektrických vlastností epoxidových pryskyřic s různými plnivy v teplotní a kmitočtové závislosti". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2018. http://www.nusl.cz/ntk/nusl-376991.
Texto completo da fonteMittner, Ondřej. "Určování velikosti plochy a rozměrů vybraných objektů v obraze". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218637.
Texto completo da fonteKolacia, Tomáš. "Měření elektrických veličin v distribučních sítích 22 kV a 0,4 kV s disperzními zdroji". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221196.
Texto completo da fonteSpradlin, Joshua K. "A Study on the Nature of Anomalous Current Conduction in Gallium Nitride". VCU Scholars Compass, 2005. http://scholarscompass.vcu.edu/etd/709.
Texto completo da fonteHalfar, Lukáš. "Automatizované měření asynchronního motoru pomocí LabVIEW". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242151.
Texto completo da fonteDřímalková, Lucie. "Diagnostika diafragmového výboje ve vodných roztocích a jeho aplikace pro povrchovou úpravu nanomateriálů". Doctoral thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-402110.
Texto completo da fonteAhmed, Mustafa M. Abdalla. "Alternating-Current Thin-Film Electroluminescent Device Characterization". Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233432.
Texto completo da fonteLivros sobre o assunto "Electrical measurements C-V and G-V"
B, Shaub I͡U. Novye metody ėlektrometrii v morskikh issledovanii͡akh. Moskva: "Nauka", 1985.
Encontre o texto completo da fonteZimin, E. F. Izmerenie parametrov ėlektricheskikh i magnitnykh poleĭ v provodi͡a︡shchikh sredakh. Moskva: Ėnergoatomizdat, 1985.
Encontre o texto completo da fonteNauchno-prakticheskai︠a︡ konferent︠s︡ii︠a︡ Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike (10th 2007 Moscow, Russia). Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike: Doklady seminara, normativno-pravovai︠a︡ baza metrologii, informat︠s︡ii︠a︡ o kompanii︠a︡kh. Moskva: DialogĖlektro, 2007.
Encontre o texto completo da fonteSegalʹ, A. M. Poverkhnostnyĭ ėffekt v tokoprovodakh i ėlementakh ėlektricheskikh apparatov. Sankt-Peterburg: Ėnergoatomizdat, Sankt-Peterburgskoe otd-nie, 1992.
Encontre o texto completo da fonteProtasevich, E. T. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Tomsk: Izd-vo Tomsk. politekhn. universiteta, 2002.
Encontre o texto completo da fonteProtasevich, E. T. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Tomsk: Izd-vo Tomsk. politekhn. universiteta, 2002.
Encontre o texto completo da fonteSobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura poluprovodnikov. Kiev: Nauk. dumka, 1988.
Encontre o texto completo da fonteSobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura dikhalʹkogenidov redkikh metallov. Kiev: Nauk. dumka, 1990.
Encontre o texto completo da fonteDhiman, Rohit, e Rajeevan Chandel. VLSI and Post-CMOS Electronics: Devices, Circuits and Interconnects, Volume 2. Institution of Engineering & Technology, 2019.
Encontre o texto completo da fonteDhiman, Rohit, e Rajeevan Chandel. VLSI and Post-CMOS Electronics: Design, Modelling and Simulation, Volume 1. Institution of Engineering & Technology, 2019.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Electrical measurements C-V and G-V"
Azarov, Alexander, Anders Hallén e Henry H. Radamson. "Electrical Characterization of Semiconductors: I–V, C–V and Hall Measurements". In Analytical Methods and Instruments for Micro- and Nanomaterials, 197–240. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26434-4_7.
Texto completo da fonteDavies, Richard J., Mary K. Brumfield e Maribeth Pierce. "Noninvasive Measurement of the Electrical Properties of Breast Epithelium During the Menstrual Cycle: A Potential Biomarker for Breast Cancer Risk". In Hormonal Carcinogenesis V, 297–304. New York, NY: Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-69080-3_27.
Texto completo da fonteRen, Bingyan, Bei Guo, Yan Zhang, Bing Zhang, Hongyuan Li e Xudong Li. "Electrical Characterization and Measurements of Sin Thin Films On Crystalline Silicon Substrates By Pecvd". In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1164–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_231.
Texto completo da fonteSrivastava, Ajay Kumar. "Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL". In Si Detectors and Characterization for HEP and Photon Science Experiment, 135–48. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19531-1_10.
Texto completo da fontePiotto, M., A. N. Longhitano, P. Bruschi, M. Buiat, G. Sacchi e D. Stanzial. "Design and Fabrication of a Compact p–v Probe for Acoustic Impedance Measurement". In Lecture Notes in Electrical Engineering, 53–56. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_10.
Texto completo da fonteWatcharinporn, Orrathai, Surachai Dechkunakorn, Niwat Anuwongnukroh, Chanjira Sinthanayothin, Peerapong Santiwong, Wisarut Bholsithi e Wanna Suchato. "Assessment of the Accuracy and Reliability of Cephsmile v.2 in Cephalograms and Model Measurements". In Lecture Notes in Electrical Engineering, 413–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27323-0_52.
Texto completo da fonteGhivela, Girish Chandra, Prince Kumar e Joydeep Sengupta. "Numerical Measurement of Oscillating Parameters of IMPATT Using Group IV and Group III–V Materials". In Lecture Notes in Electrical Engineering, 405–12. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9775-3_37.
Texto completo da fonteStanzial, D., M. Buiat, G. Sacchi, P. Bruschi e M. Piotto. "Functional Comparison of Acoustic Admittance Measurements with a CMOS-Compatible p–v Microprobe and a Reference One". In Lecture Notes in Electrical Engineering, 57–60. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_11.
Texto completo da fonteOnnes, H. Kamerlingh. "Further Experiments with Liquid Helium. D. On the Change of the Electrical Resistance of Pure Metals at very low Temperatures, etc. V. The Disappearance of the resistance of mercury". In Through Measurement to Knowledge, 264–66. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-009-2079-8_16.
Texto completo da fonteGupta, Divya, Usha Rani, Rahul Singhal e Sanjeev Aggarwal. "Oblique Ar+ Sputtered SiC Thin Films: Structural, Optical, and Electrical Properties". In Ion Beam Technology and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.112928.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Electrical measurements C-V and G-V"
Hauser, J. R., e K. Ahmed. "Characterization of ultra-thin oxides using electrical C-V and I-V measurements". In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56801.
Texto completo da fonteRichardson, W. H., e Y. Yamamoto. "Quantum Correlation Between the Junction Voltage Fluctuation and the Photon Number Fluctuation in a Semiconductor Laser". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.pdp15.
Texto completo da fonteLai, LiLung, Nan Li, Qi Zhang, Tim Bao e Robert Newton. "Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis". In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0401.
Texto completo da fonteIyer, D., A. Messinger, R. Crowder, Y. Zhang, O. Amster, S. Friedman, Y. Yang e F. Stanke. "Measurement of Dielectric Constant and Doping Concentration of a Cross-Sectioned Device by Quantitative Scanning Microwave Impedance Microscopy". In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0613.
Texto completo da fonteBaviere, R., e F. Ayela. "First Local Pressure Drops Measurements in Microchannels With Integrated Micromachined Strain Gauges". In ASME 2004 2nd International Conference on Microchannels and Minichannels. ASMEDC, 2004. http://dx.doi.org/10.1115/icmm2004-2406.
Texto completo da fonteCroitoru, N., M. Zafrir, S. Amirhaghi e Z. Harzion. "Schottky-type photovoltaic junctions with transparent conductor films". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr6.
Texto completo da fontePalanisamy, Vinothkumar, Jan Ketil Solberg, Bjarne Salberg e Per Thomas Moe. "Microstructure and Mechanical Properties of API 5CT L80 Casing Grade Steel Quenched From Different Temperatures". In ASME 2012 31st International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/omae2012-83937.
Texto completo da fonteCarlton, Hayden, Md Maksudul Hossain, Arman Ur Rashid, Yuxiang Chen, Alan Mantooth, Asif Imran, Fang Luo, John Harris, Alexis Krone e David Huitink. "Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module". In ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/ipack2021-72726.
Texto completo da fonteDucharme, Stephen, Jack Feinberg e Ratnakar Neurgaonkar. "Electrooptic and piezoelectric measurements in photorefractive materials". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mv6.
Texto completo da fonteOthman, Nur Tantiyani Ali, Je-Eun Choi e Masahiro Takei. "Electrical Tomography Sensing and Dielectrophoresis in Microchannel for 3D Particle Mixing". In ASME 2011 9th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2011. http://dx.doi.org/10.1115/icnmm2011-58232.
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