Literatura científica selecionada sobre o tema "Double Heterojunction Bipolar Transistor"
Crie uma referência precisa em APA, MLA, Chicago, Harvard, e outros estilos
Índice
Consulte a lista de atuais artigos, livros, teses, anais de congressos e outras fontes científicas relevantes para o tema "Double Heterojunction Bipolar Transistor".
Ao lado de cada fonte na lista de referências, há um botão "Adicionar à bibliografia". Clique e geraremos automaticamente a citação bibliográfica do trabalho escolhido no estilo de citação de que você precisa: APA, MLA, Harvard, Chicago, Vancouver, etc.
Você também pode baixar o texto completo da publicação científica em formato .pdf e ler o resumo do trabalho online se estiver presente nos metadados.
Artigos de revistas sobre o assunto "Double Heterojunction Bipolar Transistor"
Magno, R., J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, D. Park e N. A. Papanicolaou. "InAlAsSb∕InGaSb double heterojunction bipolar transistor". Electronics Letters 41, n.º 6 (2005): 370. http://dx.doi.org/10.1049/el:20058107.
Texto completo da fonteYan, B. P., C. C. Hsu, X. Q. Wang e E. S. Yang. "InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor". Electronics Letters 38, n.º 6 (2002): 289. http://dx.doi.org/10.1049/el:20020201.
Texto completo da fonteLIU, QINGMIN, SURAJIT SUTAR e ALAN SEABAUGH. "TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR". International Journal of High Speed Electronics and Systems 14, n.º 03 (setembro de 2004): 640–45. http://dx.doi.org/10.1142/s0129156404002600.
Texto completo da fonteChang, P. C., A. G. Baca, N. Y. Li, X. M. Xie, H. Q. Hou e E. Armour. "InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor". Applied Physics Letters 76, n.º 16 (17 de abril de 2000): 2262–64. http://dx.doi.org/10.1063/1.126315.
Texto completo da fonteCoquillat, D., V. Nodjiadjim, S. Blin, A. Konczykowska, N. Dyakonova, C. Consejo, P. Nouvel et al. "High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors". International Journal of High Speed Electronics and Systems 25, n.º 03n04 (setembro de 2016): 1640011. http://dx.doi.org/10.1142/s0129156416400115.
Texto completo da fontePelouard, J.-L., P. Hesto e R. Castagné. "Monte-Carlo study of the double heterojunction bipolar transistor". Solid-State Electronics 31, n.º 3-4 (março de 1988): 333–36. http://dx.doi.org/10.1016/0038-1101(88)90289-4.
Texto completo da fonteLew, K. L., e S. F. Yoon. "Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor". Journal of Applied Physics 89, n.º 6 (15 de março de 2001): 3464–68. http://dx.doi.org/10.1063/1.1343888.
Texto completo da fontePrinz, E. J., X. Xiao, P. V. Schwartz e J. C. Sturm. "A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic". IEEE Transactions on Electron Devices 39, n.º 11 (1992): 2636–37. http://dx.doi.org/10.1109/16.163484.
Texto completo da fonteYamina, Berrichi, e Ghaffour Kherreddine. "Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor". International Journal of Electrical and Computer Engineering (IJECE) 5, n.º 3 (1 de junho de 2015): 525. http://dx.doi.org/10.11591/ijece.v5i3.pp525-530.
Texto completo da fonteLee, Geonyeop, Stephen J. Pearton, Fan Ren e Jihyun Kim. "Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019)". Advanced Electronic Materials 5, n.º 3 (março de 2019): 1970015. http://dx.doi.org/10.1002/aelm.201970015.
Texto completo da fonteTeses / dissertações sobre o assunto "Double Heterojunction Bipolar Transistor"
Ang, Oon Sim. "Modeling of double heterojunction bipolar transistors". Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/29458.
Texto completo da fonteApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
BALARAMAN, PRADEEP ARUGUNAM. "DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS". University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.
Texto completo da fonteFlitcroft, Richard M. "Wide bandgap collector III-V double heterojunction bipolar transistors". Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341875.
Texto completo da fonteSchnyder, Iwan. "An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits /". Konstanz : Hartung-Gorre, 2005. http://www.loc.gov/catdir/toc/fy0610/2006356171.html.
Texto completo da fonteZhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors". Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.
Texto completo da fonteLee, Tae-Woo. "An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors". Thesis, University of Sheffield, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324090.
Texto completo da fonteBalaraman, Pradeep A. "Design, simulation and modelling of InP/GaAsSb/InP double heterojunction bipolar transistors". Cincinnati, Ohio : University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1069275786.
Texto completo da fonteBauknecht, Raimond. "InP double heterojunction bipolar transistors for driver circuits in fiber optical communication systems /". [S.l.] : [s.n.], 1998. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12455.
Texto completo da fonteMohiuddin, Muhammad. "InGaAs/InA1As Double Heterojunction Bipolar transistors for high-speed, low-power digital applications". Thesis, University of Manchester, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.511942.
Texto completo da fonteSchneider, Karl. "Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors". Karlsruhe : Univ.-Verl. Karlsruhe, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?idn=979772826.
Texto completo da fonteLivros sobre o assunto "Double Heterojunction Bipolar Transistor"
An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits. Konstanz: Hartung-Gorre Verlag, 2005.
Encontre o texto completo da fonteLam, Pui Leng. InGaAs-InAIAs N-P-N double heterojunction bipolar transistors grown by molecular beam epitaxy. Manchester: UMIST, 1995.
Encontre o texto completo da fonteHammer, Urs. Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits. Konstanz: Hartung-Gorre, 2010.
Encontre o texto completo da fonteChink, Hope Wuming. Emitter-up heterojunction bipolar transistor compatible laser. Ottawa: National Library of Canada, 1998.
Encontre o texto completo da fonteYoung, Stephen M. A superlattice emitter structure for a heterojunction bipolar transistor. Manchester: UMIST, 1993.
Encontre o texto completo da fonteXavier, Bernard Anthony. Analysis & modelling of gallium arsenide heterojunction bipolar transistor mixers. Uxbridge: Brunel University, 1993.
Encontre o texto completo da fonteLebby, Michael Stephen. Fabrication and characterisation of the heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BICFET): Characterisations of HFETs.... Bradford, 1987.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Double Heterojunction Bipolar Transistor"
Ramberg, L. P., P. M. Enquist, Y. K. Chen, F. E. Najjar, L. F. Eastman, E. A. Fitzgerald e K. L. Kavanagh. "Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors". In High-Speed Electronics, 168–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_34.
Texto completo da fonteWei, C. J., H. C. Chung, Y. A. Tkachenko e J. C. M. Hwang. "Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors". In Simulation of Semiconductor Devices and Processes, 298–301. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_72.
Texto completo da fontePelouard, J. L., P. Hesto, J. P. Praseuth e L. Goldstein. "InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation". In High-Speed Electronics, 164–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_33.
Texto completo da fonteAhmad, Md Mufassal, Md Faiaad Rahman e Tahmid Aziz Chowdhury. "Performance Analysis of MgF2-Si3N4 and MgF2-Ta2O5 Double-Layer Anti-reflection Coating on Heterojunction Bipolar Transistor Solar Cell". In Lecture Notes in Electrical Engineering, 285–94. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-1978-6_25.
Texto completo da fonteDubon-Chevallier, C., P. Desrousseaux, A. M. Duchenois, C. Besombes, J. Dangla, C. Bacot e D. Ankri. "Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison". In High-Speed Electronics, 151–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_30.
Texto completo da fonteCressler, John D. "Silicon-Germanium Heterojunction Bipolar Transistor". In Device and Circuit Cryogenic Operation for Low Temperature Electronics, 69–84. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4757-3318-1_4.
Texto completo da fonteSu, L. M., N. Grote, P. Schumacher e D. Franke. "Implanted-collector InGaAsP/InP Heterojunction Bipolar Transistor". In ESSDERC ’89, 275–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_57.
Texto completo da fonteDas, Arnima, Maitreyi Ray Kanjilal e Payel Biswas. "Frequency Response of Si/SiGe Heterojunction Bipolar Transistor". In Computational Advancement in Communication Circuits and Systems, 339–44. New Delhi: Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2274-3_37.
Texto completo da fonteAsbeck, P. M. "Heterojunction Bipolar Transistor Technology for High-Speed Integrated Circuits". In Picosecond Electronics and Optoelectronics, 32–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_5.
Texto completo da fonteTeeter, Douglas A., Jack R. East, Richard K. Mains e George I. Haddad. "A Numerical Large Signal Model for the Heterojunction Bipolar Transistor". In Computational Electronics, 43–46. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4757-2124-9_7.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Double Heterojunction Bipolar Transistor"
Yu-Qiu Chen e Shiou-Ying Cheng. "An InP/InGaAs double heterojunction bipolar transistor". In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061115.
Texto completo da fonteDiouf, I., P. Nouvel, L. Varani, A. Penarier, N. Diakonova, D. Coquillat, V. Nodjiadjim et al. "Double-Heterojunction Bipolar Transistor as THz Detector for Communications". In 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2021. http://dx.doi.org/10.1109/irmmw-thz50926.2021.9566983.
Texto completo da fonteCoquillat, D., V. Nodjiadjim, A. Konczykowska, M. Riet, N. Dyakonova, C. Consejo, F. Teppe, J. Godin e W. Knap. "InP double heterojunction bipolar transistor as sub-terahertz detector". In 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2014. http://dx.doi.org/10.1109/irmmw-thz.2014.6956515.
Texto completo da fonteLiu, Min, Yuming Zhang, Hongliang Lu, Yimen Zhang, Jincan Zhang, Chenghuan Li, Wei Zhou e Lifan Wu. "Geometrical scaling effects in InP/InGaAs double heterojunction bipolar transistor". In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021230.
Texto completo da fonteCoquillat, D., V. Nodjiadjim, A. Konczykowska, N. Dyakonova, C. Consejo, S. Ruffenach, F. Teppe et al. "InP double heterojunction bipolar transistor for detection above 1 THz". In 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2015. http://dx.doi.org/10.1109/irmmw-thz.2015.7327777.
Texto completo da fonteArabhavi, Akshay Mahadev, Sara Hamzeloui, Filippo Ciabattini, Olivier Ostinelli e Colombo R. Bolognesi. "Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors". In 2022 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2022. http://dx.doi.org/10.7567/ssdm.2022.j-3-01.
Texto completo da fonteBolognesi, C. R., A. M. Arabhavi, W. Quan, O. Ostinelli, X. Wen e M. Luisier. "Advances in InP Double Heterojunction Bipolar Transistors". In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.d-5-01.
Texto completo da fonteOkada, Y., K. Tada, R. J. Simes, L. A. Coldren e J. L. Merz. "GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator". In 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.s-c-6.
Texto completo da fonteHIDAKA, Osamu, Kouhei MORIZUKA e Hiroshi MOCHIZUKI. "Thermal Runaway Tolerance in Double Heterojunction Bipolar Transistors". In 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.d-2-3.
Texto completo da fonteZhou, Xingbao, Shouli Zhou, Hao Wen, Hongliang Ren, Guiyong Huang, Jun Xu e Yuhua Wang. "Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor". In 2014 IEEE 9th Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2014. http://dx.doi.org/10.1109/iciea.2014.6931447.
Texto completo da fonteRelatórios de organizações sobre o assunto "Double Heterojunction Bipolar Transistor"
Rodwell, Mark, M. Urtega, D. Scott, M. Dahlstrom e Y. Betser. Ultra High Speed Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, janeiro de 2000. http://dx.doi.org/10.21236/ada413790.
Texto completo da fonteMiller, D. L., e P. M. Asbeck. Fundamental Aspects of Heterojunction Bipolar Transistor Technology. Fort Belvoir, VA: Defense Technical Information Center, julho de 1986. http://dx.doi.org/10.21236/ada171225.
Texto completo da fonteGillespie, James K. AFRL/GaAsTek Heterojunction Bipolar Transistor (HBT) Process Development. Fort Belvoir, VA: Defense Technical Information Center, outubro de 2001. http://dx.doi.org/10.21236/ada415646.
Texto completo da fontePatrizi, G. A., M. L. Lovejoy, R. P. Jr Schneider, H. Q. Hou e P. M. Enquist. Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies. Office of Scientific and Technical Information (OSTI), dezembro de 1995. http://dx.doi.org/10.2172/212553.
Texto completo da fonteLong, Stephen I., Herbert Kroemer e M. A. Rao. Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic. Fort Belvoir, VA: Defense Technical Information Center, outubro de 1986. http://dx.doi.org/10.21236/ada174580.
Texto completo da fonteMitchell, Gregory A. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms. Fort Belvoir, VA: Defense Technical Information Center, setembro de 2011. http://dx.doi.org/10.21236/ada552934.
Texto completo da fonte