Artigos de revistas sobre o tema "Dark Count Rate (DCR)"
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Wang, Wei, Guang Wang, Hongan Zeng, Yuanyao Zhao, U.-Fat Chio e Jun Yuan. "A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology". Modern Physics Letters B 33, n.º 09 (30 de março de 2019): 1950099. http://dx.doi.org/10.1142/s0217984919500994.
Texto completo da fonteXu, Qing Yao, Hong Pei Wang, Xiang Chao Hu, Hai Qian, Ying Cheng Peng, Xiao Hang Ren e Yan Jie Li. "Quenching Circuit of Avalanche Diodes for Single Photon Detection". Applied Mechanics and Materials 437 (outubro de 2013): 1073–76. http://dx.doi.org/10.4028/www.scientific.net/amm.437.1073.
Texto completo da fonteWu, Ming-Lo, Emanuele Ripiccini, Ekin Kizilkan, Francesco Gramuglia, Pouyan Keshavarzian, Carlo Alberto Fenoglio, Kazuhiro Morimoto e Edoardo Charbon. "Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications". Sensors 22, n.º 8 (11 de abril de 2022): 2919. http://dx.doi.org/10.3390/s22082919.
Texto completo da fonteLiu, Fang, Xiaoxue Fan, Xilei Sun, Bin Liu, Junjie Li, Yong Deng, Huan Jiang, Tianze Jiang e Peiguang Yan. "Characterization of a Mass-Produced SiPM at Liquid Nitrogen Temperature for CsI Neutrino Coherent Detectors". Sensors 22, n.º 3 (31 de janeiro de 2022): 1099. http://dx.doi.org/10.3390/s22031099.
Texto completo da fonteXun, Mingzhu, Yudong Li, Jie Feng, Chengfa He, Mingyu Liu e Qi Guo. "Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes". Electronics 13, n.º 1 (4 de janeiro de 2024): 224. http://dx.doi.org/10.3390/electronics13010224.
Texto completo da fonteRazeto, A., F. Acerbi, V. Camillo, M. Carlini, L. Consiglio, A. Flammini, C. Galbiati et al. "Very large SiPM arrays with aggregated output". Journal of Instrumentation 17, n.º 05 (1 de maio de 2022): P05038. http://dx.doi.org/10.1088/1748-0221/17/05/p05038.
Texto completo da fonteZeng, Mei-Ling, Yang Wang, Xiang-Liang Jin, Yan Peng e Jun Luo. "Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency". Journal of Nanoelectronics and Optoelectronics 16, n.º 4 (1 de abril de 2021): 546–51. http://dx.doi.org/10.1166/jno.2021.2975.
Texto completo da fonteWhite, Sebastian. "Signal processing to reduce dark noise impact in precision timing". Journal of Instrumentation 18, n.º 07 (1 de julho de 2023): P07051. http://dx.doi.org/10.1088/1748-0221/18/07/p07051.
Texto completo da fonteSanzaro, Mirko, Fabio Signorelli, Paolo Gattari, Alberto Tosi e Franco Zappa. "0.16 µm–BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise". Sensors 18, n.º 11 (3 de novembro de 2018): 3763. http://dx.doi.org/10.3390/s18113763.
Texto completo da fonteMinga, Joana, Paolo Brogi, Gianmaria Collazuol, Gian-Franco Dalla Betta, Pier Simone Marrocchesi, Fabio Morsani, Lucio Pancheri, Lodovico Ratti, Gianmarco Torilla e Carla Vacchi. "A Wireless, Battery-Powered Probe Based on a Dual-Tier CMOS SPAD Array for Charged Particle Sensing". Electronics 12, n.º 11 (5 de junho de 2023): 2549. http://dx.doi.org/10.3390/electronics12112549.
Texto completo da fonteRybnikov, A., N. Anfimov, M. Qu, A. Chetverikov, G. Cao, D. Fedoseev, H. Wang et al. "Performance of the mass testing setup for arrays of silicon photomultipliers in the TAO experiment." Journal of Instrumentation 19, n.º 05 (1 de maio de 2024): P05035. http://dx.doi.org/10.1088/1748-0221/19/05/p05035.
Texto completo da fonteScott, Ryan, Wei Jiang, Xuanyu Qian e M. Jamal Deen. "A Multi-Time-Gated SPAD Array with Integrated Coarse TDCs". Electronics 11, n.º 13 (27 de junho de 2022): 2015. http://dx.doi.org/10.3390/electronics11132015.
Texto completo da fonteDiehl, I., K. Hansen, T. Vanat, G. Vignola, F. Feindt, D. Rastorguev e S. Spannagel. "Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70 μm pixel pitch". Journal of Instrumentation 19, n.º 01 (1 de janeiro de 2024): P01020. http://dx.doi.org/10.1088/1748-0221/19/01/p01020.
Texto completo da fonteGao, Shaochen, Duc-Tung Vu, Thibauld Cazimajou, Patrick Pittet, Martine Le Berre, Mohammadreza Dolatpoor Lakeh, Fabien Mandorlo et al. "Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology". Photonics 11, n.º 6 (1 de junho de 2024): 526. http://dx.doi.org/10.3390/photonics11060526.
Texto completo da fonteGautam, V., R. Casanova, S. Terzo e S. Grinstein. "Development of single photon avalanche detectors for NIR light detection". Journal of Instrumentation 17, n.º 12 (1 de dezembro de 2022): C12019. http://dx.doi.org/10.1088/1748-0221/17/12/c12019.
Texto completo da fonteWang, Wei, Ting Chen, Yongchun He, Mengjia Huang, Hao Yang, Guanyu Wang, Zhenglin Yang e Jun Yuan. "The design and characterization of high photon detection efficiency CMOS single-photon avalanche diode". Modern Physics Letters B 32, n.º 25 (5 de setembro de 2018): 1850302. http://dx.doi.org/10.1142/s0217984918503025.
Texto completo da fonteMorimoto, Kazuhiro, e Edoardo Charbon. "A Scaling Law for SPAD Pixel Miniaturization". Sensors 21, n.º 10 (15 de maio de 2021): 3447. http://dx.doi.org/10.3390/s21103447.
Texto completo da fonteWang, Wei, Xiaoyuan Bao, Li Chen, Ting Chen, Guanyu Wang e Jun Yuan. "High photon detection efficiency single photon avalanche diode in 0.18 μm standard CMOS process". Modern Physics Letters B 31, n.º 17 (8 de junho de 2017): 1750193. http://dx.doi.org/10.1142/s0217984917501937.
Texto completo da fonteJegannathan, Gobinath, Hans Ingelberts e Maarten Kuijk. "Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS". Applied Sciences 10, n.º 6 (22 de março de 2020): 2155. http://dx.doi.org/10.3390/app10062155.
Texto completo da fonteZhang, Chunling, Liying Zhang, Ru Yang, Kun Liang e Dejun Han. "Time-Correlated Raman and Fluorescence Spectroscopy Based on a Silicon Photomultiplier and Time-Correlated Single Photon Counting Technique". Applied Spectroscopy 67, n.º 2 (fevereiro de 2013): 136–40. http://dx.doi.org/10.1366/12-06736.
Texto completo da fonteMerzi, Stefano, Fabio Acerbi, Massimo Capasso, Alberto Mazzi, Giovanni Paternoster, Giancarlo Pepponi, Nicola Zorzi e Alberto Gola. "Low-energy X-ray spectroscopy with RGB-HD SiPMs coupled to CsI(Tl) scintillator". Journal of Instrumentation 17, n.º 11 (1 de novembro de 2022): P11007. http://dx.doi.org/10.1088/1748-0221/17/11/p11007.
Texto completo da fonteLiu, Danlu, Ming Li, Tang Xu, Jie Dong, Yuming Fang e Yue Xu. "Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology". Journal of Semiconductors 44, n.º 11 (1 de novembro de 2023): 114102. http://dx.doi.org/10.1088/1674-4926/44/11/114102.
Texto completo da fonteQian, Xuanyu, Wei Jiang, Ahmed Elsharabasy e M. Jamal Deen. "Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges". Sensors 23, n.º 7 (24 de março de 2023): 3412. http://dx.doi.org/10.3390/s23073412.
Texto completo da fonteYang, Jian, Yang Wang, Xiang-Liang Jin, Yan Peng e Jun Luo. "Design and Fabrication of Near Ultraviolet Enhanced Composite Single Photon Avalanche Diode for Fluorescence Lifetime Imaging". Journal of Nanoelectronics and Optoelectronics 17, n.º 2 (1 de fevereiro de 2022): 267–74. http://dx.doi.org/10.1166/jno.2022.3193.
Texto completo da fonteGola, Alberto, Fabio Acerbi, Massimo Capasso, Marco Marcante, Alberto Mazzi, Giovanni Paternoster, Claudio Piemonte, Veronica Regazzoni e Nicola Zorzi. "NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler". Sensors 19, n.º 2 (14 de janeiro de 2019): 308. http://dx.doi.org/10.3390/s19020308.
Texto completo da fonteJegannathan, Gobinath, Thomas Van den Dries e Maarten Kuijk. "Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance". Sensors 20, n.º 24 (11 de dezembro de 2020): 7105. http://dx.doi.org/10.3390/s20247105.
Texto completo da fonteGu, Huangling, e Long Wang. "A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection". Sensors 22, n.º 15 (28 de julho de 2022): 5630. http://dx.doi.org/10.3390/s22155630.
Texto completo da fonteShi Zhu, 石. 柱., 代. 千. Dai Qian, 宋海智 Song Haizhi, 谢和平 Xie Heping, 覃文治 Qin Wenzhi, 邓. 杰. Deng Jie, 柯尊贵 Ke Zungui e 孔繁林 Kong Fanlin. "Low dark count rate InGaAsP/InP SPAD". Infrared and Laser Engineering 46, n.º 12 (2017): 1220001. http://dx.doi.org/10.3788/irla201746.1220001.
Texto completo da fonteGaskill, D. Kurt, Jun Hu, X. Xin, Jian Hui Zhao, Brenda L. VanMil, Rachael L. Myers-Ward e Charles R. Eddy. "Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes". Materials Science Forum 679-680 (março de 2011): 551–54. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.551.
Texto completo da fonteReal, Diego, David Calvo, Juan de Dios Zornoza, Mario Manzaneda, Rebecca Gozzini, Carlos Ricolfe-Viala, Rafael Lajara e Francisco Albiol. "Fast Coincidence Filter for Silicon Photomultiplier Dark Count Rate Rejection". Sensors 24, n.º 7 (25 de março de 2024): 2084. http://dx.doi.org/10.3390/s24072084.
Texto completo da fontePanglosse, Aymeric, Philippe Martin-Gonthier, Olivier Marcelot, Cedric Virmontois, Olivier Saint-Pe e Pierre Magnan. "Dark Count Rate Modeling in Single-Photon Avalanche Diodes". IEEE Transactions on Circuits and Systems I: Regular Papers 67, n.º 5 (maio de 2020): 1507–15. http://dx.doi.org/10.1109/tcsi.2020.2971108.
Texto completo da fonteRatti, Lodovico, P. Brogi, G. Collazuol, G. F. Dalla Betta, A. Ficorella, P. S. Marrocchesi, L. Pancheri e C. Vacchi. "Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs". IEEE Transactions on Electron Devices 66, n.º 12 (dezembro de 2019): 5230–37. http://dx.doi.org/10.1109/ted.2019.2944482.
Texto completo da fonteXiong, Anwen, XingYa Li, Nong Yang, Xiangjiao Meng, Qitao Yu, Liping Tan, Qiming Wang et al. "Efficacy and safety of SY-5007, a highly potent and selective RET inhibitor, in Chinese patients with advanced RET-fusion positive non-small cell lung cancer (NSCLC): Results from a multicenter, single-arm, phase II study." Journal of Clinical Oncology 42, n.º 16_suppl (1 de junho de 2024): 3106. http://dx.doi.org/10.1200/jco.2024.42.16_suppl.3106.
Texto completo da fonteNaka, Angelica, e Midori Kurahashi. "Sedimentation Rate of Dunaliella salina in Dark Conditions". Applied Biosciences 2, n.º 1 (10 de janeiro de 2023): 14–20. http://dx.doi.org/10.3390/applbiosci2010002.
Texto completo da fonteDrukier, A. K., K. Freese e D. N. Spergel. "Detecting Cold Dark Matter Candidates". Symposium - International Astronomical Union 117 (1987): 490. http://dx.doi.org/10.1017/s0074180900150703.
Texto completo da fonteProchazka, Ivan, Josef Blazej e Jan Kodet. "Effective dark count rate reduction by modified SPAD gating circuit". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 787 (julho de 2015): 212–15. http://dx.doi.org/10.1016/j.nima.2014.12.001.
Texto completo da fonteWilson, S. T., S. Fargher, R. Foster, M. Malek, M. Needham, A. Scarff e G. D. Smith. "Characterisation of the temperature-dependent dark rate of Hamamatsu R7081-100 10” photomultiplier tubes". Journal of Instrumentation 18, n.º 08 (1 de agosto de 2023): P08017. http://dx.doi.org/10.1088/1748-0221/18/08/p08017.
Texto completo da fonteLiu, Liping, Zhe-Yu Hu, Ning Xie, Xiaohong Yang, Huawu Xiao, Jing Li, Can Tian et al. "Eribulin mesylate versus eribulin plus anlotinib in patients with advanced or metastatic breast cancer: Results of a phase II study." Journal of Clinical Oncology 40, n.º 16_suppl (1 de junho de 2022): 1094. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.1094.
Texto completo da fonteJiang, Zefei, Tao Sun, Xiaojia Wang, Qiang Liu, Min Yan, Zhongsheng Tong, Cuizhi Geng et al. "A multiple center, open-label, single-arm, phase II clinical trial of MRG002, an HER2-targeted antibody-drug conjugate, in patients with HER2-low expressing advanced or metastatic breast cancer." Journal of Clinical Oncology 40, n.º 16_suppl (1 de junho de 2022): 1102. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.1102.
Texto completo da fonteVERT, ALEXEY, STANSILAV SOLOVIEV, JODY FRONHEISER e PETER SANDVIK. "SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES". International Journal of High Speed Electronics and Systems 19, n.º 01 (março de 2009): 85–92. http://dx.doi.org/10.1142/s0129156409006114.
Texto completo da fonteLiu Yanxin, 刘岩鑫, 范青 Fan Qing, 李翔艳 Li Xiangyan, 李少康 Li Shaokang, 王勤霞 Wang Qinxia, 李刚 Li Gang, 张鹏飞 Zhang Pengfei e 张天才 Zhang Tiancai. "Realization of Silicon Single-Photon Detector with Ultra-Low Dark Count Rate". Acta Optica Sinica 40, n.º 10 (2020): 1004001. http://dx.doi.org/10.3788/aos202040.1004001.
Texto completo da fonteBérard, P., M. Couture, P. Deschamps, F. Laforce e H. Dautet. "Characterization study of a new UV–SiPM with low dark count rate". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 695 (dezembro de 2012): 35–39. http://dx.doi.org/10.1016/j.nima.2011.11.040.
Texto completo da fonteShibata, Hiroyuki, Kentaro Fukao, Naoto Kirigane, Shinichi Karimoto e Hideki Yamamoto. "SNSPD With Ultimate Low System Dark Count Rate Using Various Cold Filters". IEEE Transactions on Applied Superconductivity 27, n.º 4 (junho de 2017): 1–4. http://dx.doi.org/10.1109/tasc.2016.2631947.
Texto completo da fonteXiang, Gao, Sun Shi-Hai e Liang Lin-Mei. "General Theory of Decoy-State Quantum Cryptography with Dark Count Rate Fluctuation". Chinese Physics Letters 26, n.º 10 (29 de setembro de 2009): 100307. http://dx.doi.org/10.1088/0256-307x/26/10/100307.
Texto completo da fonteShibata, Hiroyuki, Kaoru Shimizu, Hiroki Takesue e Yasuhiro Tokura. "Ultimate low system dark-count rate for superconducting nanowire single-photon detector". Optics Letters 40, n.º 14 (15 de julho de 2015): 3428. http://dx.doi.org/10.1364/ol.40.003428.
Texto completo da fonteZhou, Yuan-yuan, Hua Jiang e Ying-jian Wang. "Practical decoy-state quantum key distribution method considering dark count rate fluctuation". Optoelectronics Letters 8, n.º 5 (setembro de 2012): 384–88. http://dx.doi.org/10.1007/s11801-012-2026-y.
Texto completo da fonteRebuzzi, Sara Elena, Francesco Atzori, Marilena Di Napoli, Marco Stellato, Marco Messina, Silvia Chiellino, Francesca Vignani et al. "Baseline and early change of systemic inflammation index (bSII and ΔSII) as prognostic factors in metastatic renal cell carcinoma (mRCC) patients treated with Nivolumab: Final results of the Meet-URO 15 (I-BIO-REC) study." Journal of Clinical Oncology 38, n.º 15_suppl (20 de maio de 2020): 5072. http://dx.doi.org/10.1200/jco.2020.38.15_suppl.5072.
Texto completo da fonteRebuzzi, Sara Elena, Sebastiano Buti, Marco Maruzzo, Ugo De Giorgi, Andrea Sbrana, Paolo Andrea Zucali, Emanuela Fantinel et al. "Baseline and early change of neutrophil to lymphocyte ratio (bNLR and ΔNLR) as prognostic factors in metastatic renal cell carcinoma (mRCC) treated with Nivolumab: Final results of the Meet-URO 15 (I-BIO-REC) study." Journal of Clinical Oncology 38, n.º 15_suppl (20 de maio de 2020): e17081-e17081. http://dx.doi.org/10.1200/jco.2020.38.15_suppl.e17081.
Texto completo da fonteMeng, Xiao, Shiyu Xie, Xinxin Zhou, Niccolò Calandri, Mirko Sanzaro, Alberto Tosi, Chee Hing Tan e Jo Shien Ng. "InGaAs/InAlAs single photon avalanche diode for 1550 nm photons". Royal Society Open Science 3, n.º 3 (março de 2016): 150584. http://dx.doi.org/10.1098/rsos.150584.
Texto completo da fonteHe, Tingting, Xiaohong Yang, Yongsheng Tang, Rui Wang e Yijun Liu. "High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K". Journal of Semiconductors 43, n.º 10 (1 de outubro de 2022): 102301. http://dx.doi.org/10.1088/1674-4926/43/10/102301.
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