Artigos de revistas sobre o tema "CMOS Device and Integration"
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Shawkat, Mst Shamim Ara, Mohammad Habib Ullah Habib, Md Sakib Hasan, Mohammad Aminul Haque e Nicole McFarlane. "Perimeter Gated Single Photon Avalanche Diodes in Sub-Micron and Deep-Submicron CMOS Processes". International Journal of High Speed Electronics and Systems 27, n.º 03n04 (setembro de 2018): 1840018. http://dx.doi.org/10.1142/s0129156418400189.
Texto completo da fonteKrupar, Joerg, Heiko Hauswald e Ronny Naumann. "A Substrate Current Less Control Method for CMOS Integration of Power Bridges". Advances in Power Electronics 2010 (23 de setembro de 2010): 1–11. http://dx.doi.org/10.1155/2010/909612.
Texto completo da fonteKogut, Igor T., Victor I. Holota, Anatoly Druzhinin e V. V. Dovhij. "The Device-Technological Simulation of Local 3D SOI-Structures". Journal of Nano Research 39 (fevereiro de 2016): 228–34. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.228.
Texto completo da fonteLeenheer, Andrew, Connor Halsey, Daniel Ward, Deanna Campbell, John S. Mincey, Evan M. Anderson, Scott W. Schmucker et al. "Atomic-scale Dopant Integration During CMOS Device Fabrication". ECS Meeting Abstracts MA2021-02, n.º 30 (19 de outubro de 2021): 918. http://dx.doi.org/10.1149/ma2021-0230918mtgabs.
Texto completo da fonteHuey, Sidney, Balaji Chandrasekaran, Doyle Bennett, Stan Tsai, Kun Xu, Jun Qian, Siva Dhandapani, Jeff David, Bogdan Swedek e Lakshmanan Karuppiah. "CMP Process Control for Advanced CMOS Device Integration". ECS Transactions 44, n.º 1 (15 de dezembro de 2019): 543–52. http://dx.doi.org/10.1149/1.3694367.
Texto completo da fontePerez-Bosch Quesada, E., E. Perez, M. Kalishettyhalli Mahadevaiah e C. Wenger. "Memristive-based in-memory computing: from device to large-scale CMOS integration". Neuromorphic Computing and Engineering 1, n.º 2 (18 de novembro de 2021): 024006. http://dx.doi.org/10.1088/2634-4386/ac2cd4.
Texto completo da fonteKitchen, Jennifer, Soroush Moallemi e Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (1 de janeiro de 2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.
Texto completo da fonteTabata, Toshiyuki, Fabien Rozé, Louis Thuries, Sébastien Halty, Pierre-Edouard Raynal, Imen Karmous e Karim Huet. "Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices". Electronics 11, n.º 17 (23 de agosto de 2022): 2636. http://dx.doi.org/10.3390/electronics11172636.
Texto completo da fontePan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication". MRS Advances 5, n.º 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.
Texto completo da fonteOstling, Mikael, e Per-Erik Hellstrom. "(Invited) Sequential 3D Integration of Ge Transistors on Si CMOS". ECS Meeting Abstracts MA2023-02, n.º 30 (22 de dezembro de 2023): 1511. http://dx.doi.org/10.1149/ma2023-02301511mtgabs.
Texto completo da fonteJacob, Ajey P., Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T. P. Lee e Bill Taylor. "Scaling Challenges for Advanced CMOS Devices". International Journal of High Speed Electronics and Systems 26, n.º 01n02 (17 de fevereiro de 2017): 1740001. http://dx.doi.org/10.1142/s0129156417400018.
Texto completo da fonteAlexandru, Mihaela, Viorel Banu, Matthieu Florentin, Xavier Jordá, Miguel Vellvehi e Dominique Tournier. "High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates". Materials Science Forum 778-780 (fevereiro de 2014): 1130–34. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1130.
Texto completo da fonteTakenaka, Mitsuru, e Shinichi Takagi. "III-V/Ge Device Engineering for CMOS Photonics". Materials Science Forum 783-786 (maio de 2014): 2028–33. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2028.
Texto completo da fonteKim, Hyejin, Geonhui Han, Seojin Cho, Jiyong Woo e Daeseok Lee. "Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation". Nanomaterials 14, n.º 2 (16 de janeiro de 2024): 201. http://dx.doi.org/10.3390/nano14020201.
Texto completo da fonteMols, Yves, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova et al. "Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate". Materials 14, n.º 19 (29 de setembro de 2021): 5682. http://dx.doi.org/10.3390/ma14195682.
Texto completo da fonteSebaai, Farid, Jose Ignacio Del Agua Borniquel, Rita Vos, Philippe Absil, Thomas Chiarella, Christa Vrancken, Pieter Boelen e Evans Baiya. "Poly-Silicon Etch with Diluted Ammonia: Application to Replacement Gate Integration Scheme". Solid State Phenomena 145-146 (janeiro de 2009): 207–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.207.
Texto completo da fonteSmith, A., Qi Li, Agin Vyas, Mohammad Haque, Kejian Wang, Andres Velasco, Xiaoyan Zhang et al. "Carbon-Based Electrode Materials for Microsupercapacitors in Self-Powering Sensor Networks: Present and Future Development". Sensors 19, n.º 19 (29 de setembro de 2019): 4231. http://dx.doi.org/10.3390/s19194231.
Texto completo da fonteWada, Kazumi. "A New Approach of Electronics and Photonics Convergence on Si CMOS Platform: How to Reduce Device Diversity of Photonics for Integration". Advances in Optical Technologies 2008 (7 de julho de 2008): 1–7. http://dx.doi.org/10.1155/2008/807457.
Texto completo da fonteKöck, Anton, Marco Deluca, Florentyna Sosada-Ludwikowska, Günther Maier, Robert Wimmer Teubenbacher, Martin Sagmeister, Karl Rohracher et al. "Heterogeneous Integration of Metal Oxides—Towards a CMOS Based Multi Gas Sensor Device". Proceedings 14, n.º 1 (19 de junho de 2019): 5. http://dx.doi.org/10.3390/proceedings2019014005.
Texto completo da fonteOstling, Mikael, e Per-Erik Hellstrom. "(Invited) Sequential 3D Integration of Ge Transistors on Si CMOS". ECS Transactions 112, n.º 1 (29 de setembro de 2023): 13–24. http://dx.doi.org/10.1149/11201.0013ecst.
Texto completo da fonteMulberry, Geoffrey, Kevin A. White, Matthew A. Crocker e Brian N. Kim. "A 512-Ch Dual-Mode Microchip for Simultaneous Measurements of Electrophysiological and Neurochemical Activities". Biosensors 13, n.º 5 (26 de abril de 2023): 502. http://dx.doi.org/10.3390/bios13050502.
Texto completo da fonteDunai, L., G. Peris-Fajarnés, E. Lluna e B. Defez. "Sensory Navigation Device for Blind People". Journal of Navigation 66, n.º 3 (25 de janeiro de 2013): 349–62. http://dx.doi.org/10.1017/s0373463312000574.
Texto completo da fonteWan Muhamad Hatta, Sharifah Fatmadiana, Dayanasari Abdul Hadi e Norhayati Soin. "Laser Anneal-Induced Effects on the NBTI Degradation of Advanced-Process 45nm High-K PMOS". Advanced Materials Research 189-193 (fevereiro de 2011): 1862–66. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.1862.
Texto completo da fonteWANG, YANGYUAN, RU HUANG, JINFENG KANG e SHENGDONG ZHANG. "HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS". International Journal of High Speed Electronics and Systems 16, n.º 01 (março de 2006): 147–73. http://dx.doi.org/10.1142/s012915640600359x.
Texto completo da fonteThomas, Dave, Jean Michailos, Nicolas Hotellier, Gilles Metellus, Francois Guyader, Alain Inard, Keith Buchanan, Dorleta Cortaberria Sanz, Yiping Song e Tony Wilby. "Integration Aspects of the Implementation of Through Silicon Vias (TSV) for CMOS Image Sensors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (1 de janeiro de 2010): 000539–56. http://dx.doi.org/10.4071/2010dpc-ta14.
Texto completo da fonteTakagi, Shinichi, Masafumi Yokoyama, Sang-Hyeon Kim, Rui Zhang e Mitsuru Takenaka. "(Invited) Device and Integration Technologies of III-V/Ge Channel CMOS". ECS Transactions 41, n.º 7 (16 de dezembro de 2019): 203–18. http://dx.doi.org/10.1149/1.3633300.
Texto completo da fonteSong, Boxin. "Metal Oxide Neural Devices and Their Applications". Highlights in Science, Engineering and Technology 87 (26 de março de 2024): 226–31. http://dx.doi.org/10.54097/zwgj1t76.
Texto completo da fonteHall, Steve, e Bill Eccleston. "Silicon-germanium for ULSI". Journal of Telecommunications and Information Technology, n.º 3-4 (30 de dezembro de 2000): 3–9. http://dx.doi.org/10.26636/jtit.2000.3-4.33.
Texto completo da fonteSánchez-Chiva, Josep Maria, Juan Valle, Daniel Fernández e Jordi Madrenas. "A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation". Sensors 20, n.º 20 (19 de outubro de 2020): 5899. http://dx.doi.org/10.3390/s20205899.
Texto completo da fonteZhang, Zhao Yun, Zhi Gui Shi, Zhen Chuan Yang e Bo Peng. "MEMS Monolithic Integration Technology". Key Engineering Materials 562-565 (julho de 2013): 1387–92. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.1387.
Texto completo da fonteSoh, Mei, T. Teo, S. Selvaraj, Lulu Peng, Don Disney e Kiat Yeo. "Heterogeneous Integration of GaN and BCD Technologies". Electronics 8, n.º 3 (22 de março de 2019): 351. http://dx.doi.org/10.3390/electronics8030351.
Texto completo da fonteHeyns, M., e W. Tsai. "Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials". MRS Bulletin 34, n.º 7 (julho de 2009): 485–92. http://dx.doi.org/10.1557/mrs2009.136.
Texto completo da fonteJoubert, James, e Deepak Sharma. "Using CMOS Cameras for Light Microscopy". Microscopy Today 19, n.º 4 (julho de 2011): 22–28. http://dx.doi.org/10.1017/s155192951100054x.
Texto completo da fonteKumar, K. R. Lakshmi, R. A. Hadaway, M. A. Copeland e M. I. H. King. "A precision design technique for analog very large scale integration". Canadian Journal of Physics 63, n.º 6 (1 de junho de 1985): 702–6. http://dx.doi.org/10.1139/p85-109.
Texto completo da fonteHadizadeh, Rameen, Anssi Laitinen, Niko Kuusniemi, Volker Blaschke, David Molinero, Eoin O'Toole e Márcio Pinheiro. "Low-Density Fan-Out Heterogeneous Integration of MEMS Tunable Capacitor and RF SOI Switch". International Symposium on Microelectronics 2019, n.º 1 (1 de outubro de 2019): 000051–55. http://dx.doi.org/10.4071/2380-4505-2019.1.000051.
Texto completo da fonteKhaja, Fareen Adeni. "Contact Resistance Improvement for Advanced Logic by Integration of Epi, Implant and Anneal Innovations". MRS Advances 4, n.º 48 (2019): 2559–76. http://dx.doi.org/10.1557/adv.2019.416.
Texto completo da fonteFan, Zhihua, Qinling Deng, Xiaoyu Ma e Shaolin Zhou. "Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration". Materials 14, n.º 5 (7 de março de 2021): 1272. http://dx.doi.org/10.3390/ma14051272.
Texto completo da fonteLi, Zhichao, Shiheng Yang, Samuel B. S. Lee e Kiat Seng Yeo. "A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology". Electronics 9, n.º 12 (20 de dezembro de 2020): 2198. http://dx.doi.org/10.3390/electronics9122198.
Texto completo da fonteDeshpande, V. V., V. Djara, D. Caimi, E. O'Connor, M. Sousa, L. Czornomaz e J. Fompeyrine. "(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology". ECS Transactions 69, n.º 10 (2 de outubro de 2015): 131–42. http://dx.doi.org/10.1149/06910.0131ecst.
Texto completo da fonteFilipovic, Lado, e Siegfried Selberherr. "Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors". Materials 12, n.º 15 (28 de julho de 2019): 2410. http://dx.doi.org/10.3390/ma12152410.
Texto completo da fonteZhang, Yinxing, Ziliang Fang e Xiaobing Yan. "HfO2-based memristor-CMOS hybrid implementation of artificial neuron model". Applied Physics Letters 120, n.º 21 (23 de maio de 2022): 213502. http://dx.doi.org/10.1063/5.0091286.
Texto completo da fonteBelhassen, Jérémy, Zeev Zalevsky e Avi Karsenty. "Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device". Nanomaterials 9, n.º 12 (7 de dezembro de 2019): 1743. http://dx.doi.org/10.3390/nano9121743.
Texto completo da fonteMori, Takahiro. "(Invited, Digital Presentation) Silicon Compatible Quantum Computers: Challenges in Devices, Integration, and Circuits". ECS Meeting Abstracts MA2022-01, n.º 29 (7 de julho de 2022): 1297. http://dx.doi.org/10.1149/ma2022-01291297mtgabs.
Texto completo da fonteKluba, Marta, Bruno Morana, Angel Savov, Henk van Zeijl, Gregory Pandraud e Ronald Dekker. "Wafer-Scale Integration for Semi-Flexible Neural Implant Miniaturization". Proceedings 2, n.º 13 (10 de dezembro de 2018): 941. http://dx.doi.org/10.3390/proceedings2130941.
Texto completo da fonteKazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, n.º 2012 (28 de março de 2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.
Texto completo da fonteBuchbinder, Miryam, Ora Eli, Sagie Rozental, Yami Bouhnik, Shimon Greenberg, Krish Mani, Yifat Cohen, Ken Mackay, Jeremy Pereira e Jeremy Alvarez Herault. "Integrating MTJ Devices into a 130nm CMOS Process Flow". Advances in Science and Technology 99 (outubro de 2016): 81–89. http://dx.doi.org/10.4028/www.scientific.net/ast.99.81.
Texto completo da fonteSebaai, Farid, Liesbeth Witters, Frank Holsteyns, Yoshida Yukifumi, Paul W. Mertens e Stefan De Gendt. "Nickel Selective Etch for Contacts on Ge Based Devices". Solid State Phenomena 219 (setembro de 2014): 105–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.105.
Texto completo da fonteMansour, Raafat R. "RF MEMS-CMOS Device Integration: An Overview of the Potential for RF Researchers". IEEE Microwave Magazine 14, n.º 1 (janeiro de 2013): 39–56. http://dx.doi.org/10.1109/mmm.2012.2226539.
Texto completo da fonteFUKAISHI, MUNEO, KAZUYUKI NAKAMURA e MICHIO YOTSUYANAGI. "HIGH-SPEED AND HIGH-DATA-BANDWIDTH TRANSMITTER AND RECEIVER FOR MULTI-CHANNEL SERIAL DATA COMMUNICATION WITH CMOS TECHNOLOGY". International Journal of High Speed Electronics and Systems 11, n.º 01 (março de 2001): 1–33. http://dx.doi.org/10.1142/s0129156401000770.
Texto completo da fonteCarta, Fabio, Htay Hlaing, Hassan Edrees, Shyuan Yang, Mingoo Seok e Ioannis Kymissis. "Co-development of complementary technology and modified-CPL family for organic digital integrated circuits". MRS Proceedings 1795 (2015): 19–25. http://dx.doi.org/10.1557/opl.2015.564.
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