Bibliografias temáticas / Charge-to-Spin conversion

Literatura científica selecionada sobre o tema "Charge-to-Spin conversion"

Autor: Grafiati
Publicado: 25 de maio de 2024

Crie uma referência precisa em APA, MLA, Chicago, Harvard, e outros estilos

Selecione um tipo de fonte:

Índice

Consulte a lista de atuais artigos, livros, teses, anais de congressos e outras fontes científicas relevantes para o tema "Charge-to-Spin conversion".

Ao lado de cada fonte na lista de referências, há um botão "Adicionar à bibliografia". Clique e geraremos automaticamente a citação bibliográfica do trabalho escolhido no estilo de citação de que você precisa: APA, MLA, Harvard, Chicago, Vancouver, etc.

Você também pode baixar o texto completo da publicação científica em formato .pdf e ler o resumo do trabalho online se estiver presente nos metadados.

Artigos de revistas sobre o assunto "Charge-to-Spin conversion"

1

Caprara, Sergio. "Spin-to-charge current conversion". Nature Materials 15, n.º 12 (23 de novembro de 2016): 1224–25. http://dx.doi.org/10.1038/nmat4806.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
2

Hoque, Anamul Md, Bing Zhao, Dmitrii Khokhriakov, Prasanta Muduli e Saroj P. Dash. "Charge to spin conversion in van der Waals metal NbSe2". Applied Physics Letters 121, n.º 24 (12 de dezembro de 2022): 242404. http://dx.doi.org/10.1063/5.0121577.

Texto completo da fonte
Resumo:
Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin–orbit coupling and spin textures have attracted significant attention for an efficient charge-to-spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up to room temperature. Characterization of NbSe2 shows superconducting transition temperature, Tc ∼ 7 K. To probe the current-induced spin polarization in NbSe2, we used a graphene-based non-local spin-valve device, where the spin-polarization in NbSe2 is efficiently injected and detected using non-local spin-switch and Hanle spin precession measurements. A significantly higher charge-spin conversion in NbSe2 is observed at a lower temperature. Systematic measurements provide the possible origins of the spin polarization to be predominantly due to the spin Hall effect or Rashba–Edelstein effect in NbSe2, considering different symmetry-allowed charge-spin conversion processes.
Estilos ABNT, Harvard, Vancouver, APA, etc.
3

Safranski, Christopher, Jonathan Z. Sun e Andrew D. Kent. "A perspective on electrical generation of spin current for magnetic random access memories". Applied Physics Letters 120, n.º 16 (18 de abril de 2022): 160502. http://dx.doi.org/10.1063/5.0084551.

Texto completo da fonte
Resumo:
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current can be used in two-terminal and three-terminal device geometries. In two-terminal devices, charge-to-spin conversion occurs by spin filtering in the MTJ's ferromagnetic electrodes and present day MRAM devices operate near the theoretically expected maximum charge-to-spin conversion efficiency. In three-terminal devices, spin–orbit interactions in a channel material can also be used to generate large spin currents. In this Perspective article, we discuss charge-to-spin conversion processes that can satisfy the requirements of MRAM technology. We emphasize the need to develop channel materials with larger charge-to-spin conversion efficiency—that can equal or exceed that produced by spin filtering—and spin currents with a spin polarization component perpendicular to the channel interface. This would enable high-performance devices based on sub-20 nm diameter perpendicularly magnetized MTJ nanopillars without need of a symmetry breaking field. We also discuss MRAM characteristics essential for CMOS integration. Finally, we identify critical research needs for charge-to-spin conversion measurements and metrics that can be used to optimize device channel materials and interface properties prior to full MTJ nanopillar device fabrication and characterization.
Estilos ABNT, Harvard, Vancouver, APA, etc.
4

Wang, Qiuru, Wenxu Zhang, Bin Peng, Huizhong Zeng e Wanli Zhang. "Spin to Charge Conversion at the Conducting TiO2Surface". physica status solidi (RRL) - Rapid Research Letters 11, n.º 9 (31 de julho de 2017): 1700149. http://dx.doi.org/10.1002/pssr.201700149.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
5

Wen, Zhenchao, Zhiyong Qiu, Sebastian Tölle, Cosimo Gorini, Takeshi Seki, Dazhi Hou, Takahide Kubota, Ulrich Eckern, Eiji Saitoh e Koki Takanashi. "Spin-charge conversion in NiMnSb Heusler alloy films". Science Advances 5, n.º 12 (dezembro de 2019): eaaw9337. http://dx.doi.org/10.1126/sciadv.aaw9337.

Texto completo da fonte
Resumo:
Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures, which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic electrodes, Heusler alloys also have the potential to host spin-charge conversion. Here, we report on the spin-charge conversion effect in the prototypical Heusler alloy NiMnSb. An unusual charge signal was observed with a sign change at low temperature, which can be manipulated by film thickness and ordering structure. It is found that the spin-charge conversion has two contributions. First, the interfacial contribution causes a negative voltage signal, which is almost constant versus temperature. The second contribution is temperature dependent because it is dominated by minority states due to thermally excited magnons in the bulk part of the film. This work provides a pathway for the manipulation of spin-charge conversion in ferromagnetic metals by interface-bulk engineering for spintronic devices.
Estilos ABNT, Harvard, Vancouver, APA, etc.
6

Bleser, S. M., R. M. Greening, M. J. Roos, L. A. Hernandez, X. Fan e B. L. Zink. "Negative spin Hall angle and large spin-charge conversion in thermally evaporated chromium thin films". Journal of Applied Physics 131, n.º 11 (21 de março de 2022): 113904. http://dx.doi.org/10.1063/5.0085352.

Texto completo da fonte
Resumo:
Spin-to-charge conversion and the reverse process are now critically important physical processes for a wide range of fundamental and applied studies in spintronics. Here, we experimentally demonstrate effective spin-to-charge conversion in thermally evaporated chromium thin films using the longitudinal spin Seebeck effect (LSSE). We present LSSE results measured near room temperature for Cr films with thicknesses from 2 to 11 nm, deposited at room temperature on bulk polycrystalline yttrium-iron-garnet (YIG) substrates. Comparison of the measured LSSE voltage, [Formula: see text], in Cr to a sputtered Pt film at the same nominal thickness grown on a matched YIG substrate shows that both films show comparably large spin-to-charge conversion. As previously shown for other forms of Cr, the LSSE signal for evaporated Cr/YIG shows the opposite sign compared to Pt, indicating that Cr has a negative spin Hall angle, [Formula: see text]. We also present measured charge resistivity, [Formula: see text], of the same evaporated Cr films on YIG. These values are large compared to Pt and comparable to [Formula: see text]-W at a similar thickness. Non-monotonic behavior of both [Formula: see text] and [Formula: see text] with film thickness suggests that spin-to-charge conversion in evaporated Cr, which we expect has a different strain state than previously investigated sputtered films, could be modified by spin density wave antiferromagnetism in Cr.
Estilos ABNT, Harvard, Vancouver, APA, etc.
7

Li, Rui-Hao, Pengtao Shen e Steven S. L. Zhang. "Tunable spin–charge conversion in class-I topological Dirac semimetals". APL Materials 10, n.º 4 (1 de abril de 2022): 041108. http://dx.doi.org/10.1063/5.0077431.

Texto completo da fonte
Resumo:
We theoretically demonstrate that class-I topological Dirac semimetals (TDSMs) can provide a platform for realizing both electrically and magnetically tunable spin–charge conversion. With time-reversal symmetry, the spin component along the uniaxial rotation axis ( z axis) is approximately conserved, which leads to an anisotropic spin Hall effect; the resulting spin Hall current relies on the relative orientation between the external electric field and the z axis. The application of a magnetic field, on the other hand, breaks time-reversal symmetry, driving the TDSM into a Weyl semimetal phase and, consequently, partially converting the spin current to a charge Hall current. Using the Kubo formulas, we numerically evaluate the spin and charge Hall conductivities based on a low-energy TDSM Hamiltonian together with the Zeeman coupling. Besides the conventional tensor element of the spin Hall conductivity [Formula: see text], we find that unconventional components, such as [Formula: see text] and [Formula: see text], also exist and vary as the magnetic field is rotated. Likewise, the charge Hall conductivity also exhibits appreciable tunability upon variation of the magnetic field. We show that such tunability—as well as large spin–charge conversion efficiency—arises from the interplay of symmetry and band topology of the TDSMs.
Estilos ABNT, Harvard, Vancouver, APA, etc.
8

Bai, H., Y. C. Zhang, L. Han, Y. J. Zhou, F. Pan e C. Song. "Antiferromagnetism: An efficient and controllable spin source". Applied Physics Reviews 9, n.º 4 (dezembro de 2022): 041316. http://dx.doi.org/10.1063/5.0101981.

Texto completo da fonte
Resumo:
Antiferromagnetic (AFM) spintronics is an emerging field, with significant advances in particular in the study of the tunable spin generation, transport, manipulation, and detection based on the control and probe of AFM moments. The Néel-vector-dependent spin current generation in AFM materials makes them an efficient and controllable spin source, paving the way for future spintronic devices with ultralow power consumption and high operability. Herein, we aim to provide a comprehensive review of recent progress in charge-spin conversion mediated by AFMs. First, we present a brief summary of several typical characterization techniques of charge-spin conversion. Then, we focus on the recent efforts for improving the charge-spin conversion efficiency and performances of spin torques in the antiferromagnet/ferromagnet bilayer. In the third part, we review the controllable spin current and multidirectional spin polarization generated by AFMs and the resultant field-free magnetization switching. Finally, we discuss the prospects of the AFM spin sources, which will inspire more in-depth studies and advance practical applications.
Estilos ABNT, Harvard, Vancouver, APA, etc.
9

Su, Yu-Lun, Zheng-Xing Wei, Liang Cheng e Jing-Bo Qi. "Terahertz emitters based on ultrafast spin-to-charge conversion". Acta Physica Sinica 69, n.º 20 (2020): 204202. http://dx.doi.org/10.7498/aps.69.20200715.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
10

Rinaldi, C., J. C. Rojas-Sánchez, R. N. Wang, Y. Fu, S. Oyarzun, L. Vila, S. Bertoli et al. "Evidence for spin to charge conversion in GeTe(111)". APL Materials 4, n.º 3 (março de 2016): 032501. http://dx.doi.org/10.1063/1.4941276.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
Mais fontes

Teses / dissertações sobre o assunto "Charge-to-Spin conversion"

1

Ross, M. P. "Bound exciton-assisted spin-to-charge conversion of donors in silicon". Thesis, University College London (University of London), 2017. http://discovery.ucl.ac.uk/1566745/.

Texto completo da fonte
Resumo:
Donor spins in silicon are promising candidates for quantum information applications. The information storage time in donor qubits greatly exceeds the single operation time-scale and hence promises fast and accurate quantum computation, as well as highly sensitive magnetometers. Yet, the spin-readout of single donors and small donor ensembles remains non-trivial. One potential spin-to-charge conversion method is provided by the bound exciton, which is a long-lived, excited state of the donor that can be created optically in a spin-selective manner. It decays via an Auger process, whereby the donor is ionized while the electron is promoted to the conduction band, resulting in a spin-dependent change of sample conductivity. The main subject of this thesis is to understand the physical processes surrounding the photoconductivity of the bound exciton transition and to take first steps towards the spin-measurement of small donor ensembles in devices. To this end, first, fundamental properties of the bound exciton transition are studied. Expressions for the transition energy-dependence to strain and magnetic fields are derived and experimentally validated. Furthermore, a proper treatment of the competing processes of direct, spin-independent donor ionisation is introduced, which significantly impacts the achievable read-out fidelity and spin polarisation. Secondly, experiments utilizing the bound exciton transition for spin resonance experiments on bulk samples are presented. After a development of a circuit-model for the capacitive measurement technique, coherence time measurement of the phosphorus electron spin in highly purified silicon-28 samples are presented and a novel, electrical method for state tomography of donor ensembles is developed. Lastly, usage of the bound exciton transition in silicon devices is demonstrated with spin resonance measurements showing the potential for device-based magnetometry. Thereafter, a multitude of transport processes for n-type silicon at 4K and under illumination are found and explained using current-voltage measurements. Finally, the relatively small sensitivity of the bound exciton transition energy to electric fields is determined.
Estilos ABNT, Harvard, Vancouver, APA, etc.
2

Castro, Vaz Diogo. "Spin-to-charge current conversion in SrTiO3-based two-dimensional electron gases". Electronic Thesis or Diss., Sorbonne université, 2018. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2018SORUS449.pdf.

Texto completo da fonte
Resumo:
Ce travail présente l’étude de la conversion courant de spin en courant de charge dans les gaz d’électrons bidimensionnels à base de SrTiO3. Nous commençons par une présentation des concepts de base de la spintronique : le spin, une définition du courant de spin et le comportement des spins dans des matériaux, les principales conséquences de la relation entre les courants de charge et de spin dans différents matériaux, et comment un courant de charge peut être converti en un courant de spin (et vice versa). Dans des scénarios spécifiques, la physique de l’interconversion suit des considérations de symétrie particulières dans le cadre des effets de Dressllehaus et de Rashba, qui expliquent l’interconversion du courant de charge/spin dans les gaz d’électrons 2D via l’effet direct et inverse d’Edelstein. Dans le deuxième chapitre, nous présentons le principal matériau utilisé dans cette thèse: le titanate de strontium (SrTiO3). Après avoir analysé ses principales caractéristiques, nous explorons le gaz d’électrons 2D présent dans le système LaAlO3/SrTiO3. Nous discutons en détail de l’origine de la conductivité interfaciale entre ces deux isolateurs, l’épaisseur critique de conduction de 4 mailles de LaAlO3 et des principaux mécanismes conduisant à la formation du gaz électronique 2D (catastrophe polaire, interdiffusion de cation, réactions à la surface et défauts induits par la polarité). Ensuite, nous décrivons en détail la procédure expérimentale pour obtenir des hétérostructures de LaAlO3/SrTiO3: le traitement de surface des monocristaux de SrTiO3, la croissance par ablation laser pulsé de films ultra-minces de LaAlO3, et la pulvérisation cathodique. Nous introduisons les deux techniques principales utilisées pour évaluer les propriétés interfaciales, la spectroscopie photoélectronique de rayons X (XPS) et le magnétotransport, avec quelques résultats pour les échantillons de LaAlO3/SrTiO3. Enfin, nous montrons comment un mince dépôt d’une couche métallique sur LaAlO3/SrTiO3 peut modifier radicalement les propriétés interfaciales en réduisant (si le métal est réactif et possède un travail de sortie inférieur à une valeur critique) ou en augmentant (pour les métaux nobles) l’épaisseur critique de la conduction interfacial. Pour conclure ce chapitre, nous proposons un modèle qui décrit comment un gaz d’électrons 2D peut être créé dans d’autres systèmes à base d’oxydes complexes. Dans le troisième chapitre, nous étudions les phénomènes de conversion spin/charge. Nous commençons par un état de l’art de la littérature concernant des observations expérimentales des gaz d’électrons Rashba 2D, ainsi que de la conversion du courant spin-à-charge par l’effet Edelstein inverse dans les puit de potentiel à base de semi-conducteurs, les isolants topologiques et les systèmes à base d’oxydes. Ensuite, nous introduisons le pompage de spin, une technique utilisée pour générer des courants de spin purs. Les résultats de la conversion du courant spinà-charge dans les systèmes LaAlO3/SrTiO3 et metal/SrTiO3 sont présentés, accompagnés d’une interprétation de la géante et ajustable con-version spin/charge. Dans le cas d’échantillons composés par metal/SrTiO3 , la spectroscopie photoélectronique résolue en angle (ARPES) et les notions de mélange de bande électronique et de topologie sont introduites pour justifier la conversion charge/spin extrêmement élevé. Dans le dernier chapitre, nous montrons des expériences supplémentaires réalisées sur le système LaAlO3/SrTiO3 en ce qui concerne la magnétorésistance anisotrope et unidirectionnelle [...]
This thesis is composed by four chapters. In the first, we start by introducing basic concepts in spintronics, such as the electron spin, a definition of spin current, and how spins behave in real materials. Then, we review the main consequences of the relation between charge and spin currents in different materials, and how a charge current can be converted in a spin current (and vice-versa). In particular scenarios, the physics of the interconversion follows special symmetry considerations in the framework of the Dressllehaus and Rashba effects, which in turn explain the spin-to-charge current interconversion in 2D electron gases through the direct and inverse Edelstein effect. In the second chapter, we introduce the main material used throughout this thesis: strontium titanate (SrTiO3). After reviewing its main features, we explore the remarkable 2D elec-tron gas found in the LaAlO3/SrTiO3 system. We discuss in detail the origin of the interfacial conductivity that arises between these two insulators, the critical thickness for conduction of 4 unit cells of LaAlO3, and the main mechanisms that lead to the 2D electron gas formation (polar catastrophe, cation interdiffusion, surface reactions and polarity-induced defects). Then, we thoroughly describe the experimental procedure to obtain such heterostructures, including a comprehensive guide on the surface treatment of SrTiO3 single crystals, the pulsed laser deposition growth of ultra-thin LaAlO3 films and magnetron sputtering. In addition, we elaborate on the two main techniques used to evaluate the interfacial properties, X-ray photoelectron spectroscopy and magnetotransport, while showing some results for LaAlO3/SrTiO3 samples. Lastly, we show how a thin deposition of a metallic layer on top of LaAlO3/SrTiO3 can drastically change the interfacial properties, by reducing (if the metal is reactive) or increasing (for noble metals) the critical thickness for conduction. We end this chapter by giving a blueprint that describes how a 2D electron gas can be created in other oxide systems. In the third chapter we investigate spin-tocharge conversion phenomena. We start by giving an overview on experimental observations of Rashba 2D electron gases, as well as spin-to-charge current conversion through the inverse Edelstein effect in semiconductor quantum wells, topological insulators and oxide-based systems. Then, we thoroughly introduce spin pumping, a technique used to generate pure spin currents. Results for spin-to-charge current conversion in the LaAlO3/SrTiO3 and metal-capped SrTiO3 systems are shown, accompanied by an interpretation of the large and tunable conversion efficiency. For the metal-capped SrTiO3 case, angle-resolved photoemission spectroscopy and notions of electronic band mixing and topology are introduced to describe the extremely large efficiency. In the last chapter, we show additional experiments performed on the LaAlO3/SrTiO3 system regarding anisotropic and unidirectional magnetoresistance, while reviewing the scarce bibliography on these effects in 2D electron gases. After that, we introduce a recently discovered effect, the unidirectional spin Hall magnetoresistance, and develop a simple conceptual model for an analogous effect in 2D electron gases: the unidirectional Edesltein magnetoresistance. This effect is based on the expected strong charge-to-spin conversion in 2D electrons gas, and the interaction of the generated spin currents with an adjacent ferromagnet. We finish by very briefly showing preliminary experiments in NiFe/ LaAlO3/SrTiO3 heterostructures
Estilos ABNT, Harvard, Vancouver, APA, etc.
3

Noel, Paul. "Dynamical spin injection and spin to charge current conversion in oxide-based Rashba interfaces and topological insulators". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY062.

Texto completo da fonte
Resumo:
L'utilisation de matériaux ferromagnétiques a longtemps été l'unique méthode pour détecter et produire des courants de spin. Cependant, depuis le milieu des années 2000 des méthodes alternatives ont été proposées. Un champ émergent de la spintronique, appelé spin-orbitronique, s'attelle à l'utilisation du couplage spin orbite pour détecter et produire des courants de spin en l'absence de matériaux ferromagnétiques. Une interconversion efficace entre courant de spin et courant de charge a pu être obtenues à l'aide de l'effet Hall de spin dans les métaux lourds tels que le Platine ou le Tantale. Une telle conversion peut aussi être obtenue en utilisant l'effet Edelstein dans les interfaces Rashba et les isolants topologiques.La conversion de courant de spin à courant de charge par effet Hall de spin et effet Edelstein inverse peut être étudiée par la méthode dite du pompage de spin par résonance ferromagnétique. Ce manuscrit présente ces différents effets de conversion ainsi que la technique utilisée basée sur une mesure électrique effectuée à la résonance ferromagnétique. Y sont présentés des résultats de conversion spin charge dans les métaux, les interfaces Rashba à base d'oxydes ainsi que dans les isolants topologiques. Parmi ces systèmes nous avons montré la possibilité de moduler à l'aide d'une grille électrostatique la conversion spin charge dans un gaz d'électron bidimensionel obtenu à la surface de l'oxyde SrTiO3. De plus il est possible de moduler, de façon rémanente, la conversion dans SrTiO3 grâce à la ferroélectricité obtenue à des températures cryogéniques.Parmi les autres systèmes étudiés les isolants topologiques HgTe et Sb2Te3 présentent des propriétés de conversion spin vers charge prometteuses à température ambiante. En particulier dans le cas de HgTe, en utilisant une couche de protection de HgCdTe nous avons pu obtenir des niveaux de conversion un ordre de grandeur plus élevé que dans le Platine.Ces résultats suggèrent que les gaz d'électrons bidimensionnels aux interfaces d'oxydes ainsi que les isolants topologiques sont des systèmes prometteurs pour la détections de courants de spin pour des applications au delà de la logique CMOS
Using a ferromagnetic layer has been the first method to obtain and detect spin currents, allowing to modify the magnetization state of an adjacent layer using spin transfer torque. However, in recent years, an alternative way to manipulate spin currents has been proposed. An emerging field of spintronics, called spin-orbitronics, exploits the interplay between charge and spin currents enabled by the spin-orbit coupling (SOC) in non-magnetic systems. An efficient current conversion can be obtained through the Spin Hall Effect in heavy metals such as Platinum or Tantalum. The conversion can also be obtained by exploiting the Edelstein Effect in Rashba interfaces and topological insulators.The spin to charge conversion by means of Inverse Edelstein Effect and inverse Spin Hall Effect can be studied by the spin pumping by ferromagnetic resonance technique. This manuscript present these two conversion mechanisms as well as the technique that was used to measure them, which is based on an electrical detection of the ferromagnetic resonance. Results on the spin to charge current conversion obtained in metals, oxide-based Rashba interfaces and topological insulators will be presented. Among these systems we have demonstrated the possibility to tune the conversion efficiency by using a gate voltage in a two-dimensional electron gas at the surface of an oxide SrTiO3. Moreover it is possible to tune this effect, a remanent way, thanks to the ferroelectricity obtained in SrTiO3 at cryogenic temperatures.Other studied systems such as topological insulators HgTe and Sb2Te3 also have promising properties for an efficient spin to charge current conversion at room temperature. In particular we showed than in HgTe by using a thin HgCdTe protective layer, it is possible to obtain a spin to charge current conversion efficiency one order of magnitude larger than in Pt.These results suggest that stwo dimensional electron gases at oxide interfaces and topological insulators have a strong potential for the efficient detection of spin currents for possible beyond CMOS applications
Estilos ABNT, Harvard, Vancouver, APA, etc.
4

She, Diana. "Molecular beam epitaxy growth of the BiSb/MnGa heterosrtuctures for the charge current to spin current conversion study". Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP003.

Texto completo da fonte
Resumo:
Récemment, les isolants topologiques (TI) ont attiré beaucoup d'attention en raison de leurs propriétés prometteuses potentiellement utiles pour les technologies émergentes, telles que la mémoire MRAM. En effet, les systèmes TI/ferromagnétiques (FM) peuvent réduire considérablement le courant d'écriture en utilisant le renversement par couple spin-orbite (SOT) comme méthode d'écriture. Cet avantage découle de l'utilisation des états de surface topologiques polarisés en spin des TI. Dans ce travail, notre objectif était de faire croître des hétérostructures TI/FM par épitaxie par jets moléculaires (MBE), de réaliser une caractérisation complète des propriétés structurelles, magnétiques et électroniques, et d'étudier leurs propriétés de conversion spin-charge. Nous avons développé une hétérostructure Bi ₁₋ ₓSbₓ (TI)/ Mnₓ Ga₁₋ₓ (FM)//GaAs(001) de haute qualité par MBE, malgré la différence de symétrie cristalline. Les films minces FM de MnxGa1-x présentent une anisotropie magnétique perpendiculaire, un champ coercitif faible, une température de Curie élevée, un cycle d'hystérésis carré et une résistivité suffisamment élevée. Cela garantit que la majorité du courant circule à travers la couche Bi ₁₋ ₓSbₓ pendant les expériences SOT. Les mesures SOT suggèrent que les états de volume de Bi ₁₋ ₓSbₓ contribuent principalement aux propriétés de transport. Cependant, nous avons démontré la présence d'états de surface topologiques par ARPES. Ainsi, les états de volume et de surface peuvent coexister. De plus, les résultats préliminaires de la spectroscopie terahertz ont montré une conversion efficace du spin en charge dans la bicouche étudiée, démontrant un potentiel prometteur. En conséquence, nos résultats indiquent que Bi ₁₋ ₓSbₓ présente un potentiel significatif pour les dispositifs spintroniques
Recently, topological insulators (TI) have attracted much attention with their promising prop-erties potentially useful for the emerging memory technologies, as magnetic random access memory (MRAM). Indeed, TI/ferromagnetic (FM) systems may drastically reduce the writing current using the spin-orbit torque (SOT) switching as a writing method. This advantage stems from the utilization of the spin-polarized topological surface states of the TIs. In this work, we were aiming to grow TI/FM bilayer heterostructures by molecular beam epitaxy (MBE), to perfrom comprehensive structural, magnetic and electronic characterization, and to study their charge-to-spin interconversion properties.We developped a high-quality Bi ₁₋ ₓSbₓ (TI)/ Mnₓ Ga₁₋ₓ (FM)//GaAs(001) bilayer heterostrucure by MBE, despite the difference in crystal symmetries. The FM Mnₓ Ga₁₋ₓ thin films exhibit perpendicular magnetic anisotropy, low coercive field, high Curie temperature, square hysteresis cycle, and sufficiently high resistivity. This ensured that a major portion of the electrical current flows through the Bi ₁₋ ₓSbₓ layer during the SOT experiments. The SOT measurements suggest that bulk states of Bi ₁₋ ₓSbₓ predominantly contributed to the transport properties. However, we demostrated the presence of topological surface states with ARPES. So the bulk and surface states may coexist. Additionally, the preliminary results of terahertz spectroscopy showed the efficient spin-to-charge conversion in the studied bilayer, showing promising potential. Consequently, our findings indicate that Bi ₁₋ ₓSbₓ holds significant promise for spintronic devices
Estilos ABNT, Harvard, Vancouver, APA, etc.
5

Huang, Jue [Verfasser], Stuart S. P. [Gutachter] Parkin, Ingrid [Gutachter] Mertig e Thorsten [Gutachter] Hesjedal. "Epitaxial growth and charge-to-spin conversion studies of Bi2Te3 topological insulator / Jue Huang ; Gutachter: Stuart S. P. Parkin, Ingrid Mertig, Thorsten Hesjedal". Halle (Saale) : Universitäts- und Landesbibliothek Sachsen-Anhalt, 2021. http://d-nb.info/1239645503/34.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
6

Haspot, Victor. "Exploitation d’hétérostructures d’oxydes intégrant La₂⁄₃Sr₁⁄₃MnO₃ pour des applications spin-orbitroniques et magnoniques". Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP079.

Texto completo da fonte
Resumo:
Les dispositifs spintroniques classiques utilisent l'interaction d'échange entre les spins des électrons de conduction et les moments magnétiques locaux dans les matériaux magnétiques pour créer des courants polarisés en spin, ou pour manipuler l’aimantation par transfert de spin à partir de courants polarisés en spin. Une nouvelle direction de la spintronique - appelée aussi spin-orbitronique - exploite le couplage spin-orbite dans les matériaux non magnétiques au lieu de l'interaction d'échange dans les matériaux magnétiques dans le but de générer, détecter ou exploiter des courants polarisés en spin. Une autre voie - la magnonique - explore quant à elle le potentiel des ondes de spin pour transporter et traiter des informations dans des nanostructures magnétiques. Pour une large gamme d'applications dans ces deux domaines, des matériaux avec des très faibles valeurs d'amortissement magnétique sont nécessaires. Dans cette thèse, nous avons d'abord exploré le potentiel du matériau demi-métallique La₂⁄₃Sr₁⁄₃MnO₃ (LSMO) pour obtenir de très faible valeur d’amortissement magnétique. Nous avons étudié notamment l'effet de la contrainte et de la température sur les processus de relaxations magnétiques des couches minces LSMO. Par la suite, les films LSMO ont été utilisés comme injecteurs de spin dans des hétérostructures d’oxydes dans une perspective spin-orbitronique. Aussi, nous avons étudié l'opportunité de contrôler l'interconversion spin-charge en ajoutant un matériau ferroélectrique, BiFeO₃ (BFO) en exploitant les effets d'interfaces. Enfin, nous avons exploré le potentiel des bicouches LSMO / BFO dans le but de réaliser des cristaux magnoniques reprogrammables
Classical spintronic devices use the exchange interaction between conduction electron spins and local spins in magnetic materials to create spin-polarized currents, or to manipulate nanomagnets by spin transfer from spin-polarized currents. A novel direction of spintronics –called spin-orbitronics - exploits the spin-orbit coupling in nonmagnetic materials instead of the exchange interaction in magnetic materials to generate, detect or exploit spin-polarized currents. Another one –magnonics- explores the potential of spin waves to carry and process information in magnetic nanostructures. For a broad range of applications in both fields, materials with ultralow magnetic damping values are required. In this thesis we first explored the potential of the half metallic material La₂⁄₃Sr₁⁄₃MnO₃ (LSMO) to obtain very low damping. We studied the effect of strain and temperature on the damping of LSMO thin films. Subsequently, LSMO films were used as spin-current injectors in spin-orbitronic heterostructures. In those we also studied the opportunity to control the spin-charge interconversion by adding a ferroelectric material, BiFeO₃ (BFO) by exploiting the interface effects. Finally, we explored the potential of LSMO/BFO bilayers for reprogrammable magnonic crystals
Estilos ABNT, Harvard, Vancouver, APA, etc.
7

Yu-HsiangHuang e 黃宇翔. "Study of the spin to charge conversion of Bi2Se3/Bi bilayer hybrid system and benefit of copper transport layer using spin pumping effect". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/a655sn.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.

Capítulos de livros sobre o assunto "Charge-to-Spin conversion"

1

Mattana, Richard, Nicolas Locatelli e Vincent Cros. "Spintronics and Synchrotron Radiation". In Springer Proceedings in Physics, 131–63. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-64623-3_5.

Texto completo da fonte
Resumo:
AbstractHaving access to the electronic and magnetic properties of spintronic systems is of crucial importance in view of their future technological developments. Our purpose in this chapter is to elaborate how a variety of synchrotron radiation-based measurements provides powerful and often unique techniques to probe them. We first introduce general concepts in spintronics and present some of the important scientific advances achieved in the last 30 years. Then we will describe some of the key investigations using synchrotron radiation concerning voltage control of magnetism, spin-charge conversion and current-driven magnetization dynamics.
Estilos ABNT, Harvard, Vancouver, APA, etc.
2

Sun, Dali. "Spin-to-Charge Conversion in Hybrid Perovskites". In Hybrid Organic Inorganic Perovskites, 43–86. World Scientific, 2022. http://dx.doi.org/10.1142/9789811242052_0002.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.

Trabalhos de conferências sobre o assunto "Charge-to-Spin conversion"

1

Fukuma, Y., S. Gupta, R. Medwal, R. S. Rawat, P. Agarwal e R. Singh. "Spin to Charge Conversion for Terehrtz Spintronics". In 2020 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2020. http://dx.doi.org/10.1109/icops37625.2020.9717498.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
2

Rinaldi, Christian C., Riccardo Bertacco, Sara Varotto, Stefano Cecchi, Raffaella Calarco e Luca Nessi. "Investigation of charge-to-spin conversion in GeTe". In Spintronics XI, editado por Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe e Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2320502.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
3

Lin, Yu-Lon, Tzu-Chuan Hsin, Yu-Hui Wu, Jack Yuan-Chen Sun e Yuan-Chieh Tseng. "Scalable Spin-to-Charge Conversion Effect in the Inverse Spin Hall Nanodevice". In 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers). IEEE, 2023. http://dx.doi.org/10.1109/intermagshortpapers58606.2023.10228405.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
4

Rassekh, Maedeh, Marko Milivojevic e Martin Gmitra. "Charge-to-spin conversion in graphene proximitized by 1T-TaS2". In APPLIED PHYSICS OF CONDENSED MATTER (APCOM2023). AIP Publishing, 2024. http://dx.doi.org/10.1063/5.0187464.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
5

Varotto, Sara, Luca Nessi, Stefano Cecchi, Jagoda Slawinska, Paul Noël, Federico Fagiani, Matteo Cantoni et al. "Room-temperature ferroelectric control of spin-to-charge conversion in GeTe". In Spintronics XIV, editado por Henri-Jean M. Drouhin, Jean-Eric Wegrowe e Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2596102.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
6

Goel, Shobhit, Nguyen Huynh Duy Khang, Le Duc Anh, Pham Nam Hai e Masaaki Tanaka. "Room-temperature Spin Injection and Spin-to-charge Conversion in a Ferromagnetic Semiconductor / Topological Insulator Heterostructure". In 2021 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2021. http://dx.doi.org/10.7567/ssdm.2021.i-5-03.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
7

Shao, Qiming, Guoqiang Yu, Lei Pan, Xiaoyu Che, Yabin Fan, Koichi Murata, Qing-Lin He, Tianxiao Nie, Xufeng Kou e Kang L. Wang. "Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers". In 2018 76th Device Research Conference (DRC). IEEE, 2018. http://dx.doi.org/10.1109/drc.2018.8442225.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
8

Zhang, Qi, Deshun Hong, Changjiang Liu, Richard Schaller, Dillon Fong, Anand Bhattacharya e Haidan Wen. "Gate-tunable terahertz emission at oxide interfaces via ultrafast spin-to-charge current conversion". In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2019. http://dx.doi.org/10.1364/cleo_qels.2019.fm4d.7.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
9

Noel, P., C. Thomas, L. Vila, T. Meunier, P. Ballet e J. Attane. "Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states. (Invited)". In 2018 IEEE International Magnetic Conference (INTERMAG). IEEE, 2018. http://dx.doi.org/10.1109/intmag.2018.8508662.

Texto completo da fonte
Estilos ABNT, Harvard, Vancouver, APA, etc.
10

Komissarov, I., J. Cheng, D. Chakraborty, G. Chen, L. Gładczuk, P. Przysłupski, S. L. Prischepa et al. "Femtosecond spin-to-charge current conversion in FeCo/graphene nanobilayer excited by femtosecond optical laser pulse". In CLEO: Fundamental Science. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_fs.2023.ff2g.5.

Texto completo da fonte
Resumo:
The generation of THz transients in a FeCo/graphene nanobilayer, excited by femtosecond optical laser pulses is demonstrated. We assign the mechanism of the THz radiation to the inverse Rashba-Edelstein effect in graphene with λREE on the order of 0.001 nm.
Estilos ABNT, Harvard, Vancouver, APA, etc.
Você também pode estar interessado nas extensas listas de trabalhos sobre o assunto "Charge-to-Spin conversion":
Artigos de revistas
Oferecemos descontos em todos os planos premium para autores cujas obras estão incluídas em seleções literárias temáticas. Contate-nos para obter um código promocional único!

Vá para a bibliografia