Literatura científica selecionada sobre o tema "Bit Erasable"
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Artigos de revistas sobre o assunto "Bit Erasable"
Lutkenhaus, Norbert, Ashutosh Marwah e Dave Touchette. "Erasable Bit Commitment From Temporary Quantum Trust". IEEE Journal on Selected Areas in Information Theory 1, n.º 2 (agosto de 2020): 536–54. http://dx.doi.org/10.1109/jsait.2020.3017054.
Texto completo da fonteYamada, Noboru. "Erasable Phase-Change Optical Materials". MRS Bulletin 21, n.º 9 (setembro de 1996): 48–50. http://dx.doi.org/10.1557/s0883769400036368.
Texto completo da fonteLibera, Matthew, e Martin Chen. "Multilayered Thin-Film Materials for Phase-Change Erasable Storage". MRS Bulletin 15, n.º 4 (abril de 1990): 40–45. http://dx.doi.org/10.1557/s0883769400059947.
Texto completo da fonteRensner, Gary D., David A. Eckhardt e Michael Page. "Nuclear Radiation Response of Intel 64k-Bit and 128k-Bit HMOS Ultraviolet Erasable Programmable Read Only Memories (UVEPROMs)". IEEE Transactions on Nuclear Science 32, n.º 6 (1985): 4056–60. http://dx.doi.org/10.1109/tns.1985.4334068.
Texto completo da fonteXu, Meili, Weihao Qi, Wenfa Xie e Wei Wang. "High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator". Applied Physics Letters 121, n.º 8 (22 de agosto de 2022): 083502. http://dx.doi.org/10.1063/5.0105190.
Texto completo da fonteHerrojo, Cristian, Javier Mata-Contreras, Ferran Paredes, Alba Nunez, Eloi Ramon e Ferran Martin. "Near-Field Chipless-RFID System With Erasable/Programmable 40-bit Tags Inkjet Printed on Paper Substrates". IEEE Microwave and Wireless Components Letters 28, n.º 3 (março de 2018): 272–74. http://dx.doi.org/10.1109/lmwc.2018.2802718.
Texto completo da fonteJeon, Jin-Kwan, In-Won Hwang, Hyun-Jun Lee e Younho Lee. "Improving the Performance of RLizard on Memory-Constraint IoT Devices with 8-Bit ATmega MCU". Electronics 9, n.º 9 (22 de setembro de 2020): 1549. http://dx.doi.org/10.3390/electronics9091549.
Texto completo da fonteLibera, Matthew R., e Martin Chen. "The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films". Proceedings, annual meeting, Electron Microscopy Society of America 47 (6 de agosto de 1989): 574–75. http://dx.doi.org/10.1017/s0424820100154846.
Texto completo da fonteArima, Hideaki, Natuo Ajika, Makoto Ohi, Takayuki Matsukawa e Natsuro Tsubouchi. "A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable / Programmable Read-Only Memory". Japanese Journal of Applied Physics 30, Part 2, No. 3A (1 de março de 1991): L334—L337. http://dx.doi.org/10.1143/jjap.30.l334.
Texto completo da fonteDay, Daniel, Min Gu e Andrew Smallridge. "Use of two-photon excitation for erasable–rewritable three-dimensional bit optical data storage in a photorefractive polymer". Optics Letters 24, n.º 14 (15 de julho de 1999): 948. http://dx.doi.org/10.1364/ol.24.000948.
Texto completo da fonteTeses / dissertações sobre o assunto "Bit Erasable"
Melul, Franck. "Développement d'une nouvelle génération de point mémoire de type EEPROM pour les applications à forte densité d'intégration". Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0266.
Texto completo da fonteThe objective of this thesis was to develop a new generation of EEPROM memory for high reliability and high density applications. First, an innovative memory cell developed by STMicroelectronics - eSTM (Split-gate charge storage memory with buried vertical selection transistor) - was studied as a reference cell. In a second part, to improve the reliability of the eSTM cell and to allow a more aggressive miniaturization of the EEPROM cell, a new memory architecture has been proposed: the BitErasable cell. It showed an excellent reliability and allowed to bring elements of under-standing on the degradation mechanisms present in these memory devices with buried selection transistor. This new architecture also offers the possibility to individually erase cells in a memory array: bit by bit. Aware of the great interest of bit-by-bit erasing, a new erasing mechanism by hot hole injection has been proposed for the eSTM cell. It has shown performances and a level of reliability perfectly compatible with the industrial requirements of Flash-NOR applications
Trabalhos de conferências sobre o assunto "Bit Erasable"
Gupta, Mool C., e Forrest Strome. "Performance of an Erasable Organic Dye-Binder Optical Disk Medium". In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/ods.1985.wbb1.
Texto completo da fonteIshibashi, Hiromichi, Mitsuro Moriya e Takeo Ohta. "Study of phase-change erasable sample-servo optical disk with bit-capsule groove". In Optical Data Storage Topical Meeting, editado por Donald B. Carlin, David B. Kay e Alfred A. Franken. SPIE, 1992. http://dx.doi.org/10.1117/12.137568.
Texto completo da fonteHo, Z. Z., G. Savant, J. Hirsh e T. Jannson. "Multilayer 3-D optical memory based on a polarization vectorial recording medium". In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.tuvv6.
Texto completo da fonteDay, Daniel, Min Gu e Andrew Smallridge. "High-density erasable three-dimensional optical bit data storage in a photorefractive polymer using two-photon excitation". In International Symposium on Optical Memory and Optical Data Storage. SPIE, 1999. http://dx.doi.org/10.1117/12.997603.
Texto completo da fonteNanto, H., Y. Douguchi, J. Nishishita, M. Kadota, N. Kashiwagi, T. Shinkawa e S. Nasu. "A Novel Erasable and Rewritable Optical Memory Utilizing Photostimulated Luminescence in Eu and Sm Co-doped SrS Phosphor Ceramics". In Symposium on Optical Memory. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/isom.1996.otub.9.
Texto completo da fonteEvans, K. E., A. N. Burgess e S. J. Abbott. "Finite Element Modelling of Laser-Induced Hole Formation in Optical Storage Media". In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/ods.1987.thd1.
Texto completo da fonteHong, Tzung-Pei, Lu-Hung Chen, Shyue-Liang Wang, Chun-Wei Lin e Bay Vo. "Quasi-erasable itemset mining". In 2017 IEEE International Conference on Big Data (Big Data). IEEE, 2017. http://dx.doi.org/10.1109/bigdata.2017.8258125.
Texto completo da fonteHong, Tzung-Pei, Chia-Che Li, Shyue-Liang Wang e Jerry Chun-Wei Lin. "Reducing Database Scan in Maintaining Erasable Itemsets from Product Deletion". In 2018 IEEE International Conference on Big Data (Big Data). IEEE, 2018. http://dx.doi.org/10.1109/bigdata.2018.8621965.
Texto completo da fonteHong, Tzung-Pei, Jia-Xiang Li, Yu-Chuan Tsai e Wei-Ming Huang. "Unified Temporal Erasable Itemset Mining with a Lower-Bound Strategy". In 2022 IEEE International Conference on Big Data (Big Data). IEEE, 2022. http://dx.doi.org/10.1109/bigdata55660.2022.10020440.
Texto completo da fonteOhara, Shunji, Chikashi Inokuchi, Tadashige Furutani, Takashi Ishida, Kenzo Ishibashi, Akira Kurahashi e Tornio Yoshida. "Compatibility test for Phase Change Erasable and WORM media in a Multi-function drive". In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ods.1991.tua5.
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