Literatura científica selecionada sobre o tema "Bande III"
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Artigos de revistas sobre o assunto "Bande III"
Saleil, Jean, Marc Mantel e Jean Le Coze. "La production des aciers inoxydables: Histoire de son développement et des procédés de fabrication. Partie III. Évolutions des méthodes de coulée et de mise en forme des aciers inoxydables". Matériaux & Techniques 108, n.º 1 (2020): 105. http://dx.doi.org/10.1051/mattech/2020016.
Texto completo da fonteSemmler, Josef. "Hermann Jakobs, Eugen III. und die Anfänge europäischer Stadtsiegel nebst Anmerkungen zum Bande IV der Germania Pontificia". Zeitschrift der Savigny-Stiftung für Rechtsgeschichte: Kanonistische Abteilung 71, n.º 1 (1 de agosto de 1985): 364–66. http://dx.doi.org/10.7767/zrgka.1985.71.1.364.
Texto completo da fonteXu, Jie, e R. L. Conner. "Intravarietal variation in satellites and C-banded chromosomes of Agropyron intermedium ssp. trichophorum cv. Greenleaf". Genome 37, n.º 2 (1 de abril de 1994): 305–10. http://dx.doi.org/10.1139/g94-042.
Texto completo da fonteBecet, Jean-Marie. "2. Construction dans la bande des cent mètres. Article L. 146-4-III du Code de l'urbanisme. Notion d'espace urbanisé. Tribunal administratif de Rennes, 25 octobre 1990 Epoux Jooris (Req. n° 86-2866). Avec note." Revue Juridique de l'Environnement 16, n.º 3 (1991): 396–400. http://dx.doi.org/10.3406/rjenv.1991.2735.
Texto completo da fonteFavre, Justine. "Raconter l’expérience du sujet plurilingue, biographies langagières en bande dessinée". FLE: français langue en expérience(s) 323 (2024): 83–108. http://dx.doi.org/10.4000/11qej.
Texto completo da fonteDey, Monojit, Sourav Bhattacharjee, Aniket Chakrabarty, Roger H. Mitchell, Supriyo Pal, Supratim Pal e Amit Kumar Sen. "Compositional variation and genesis of pyrochlore, belkovite and baotite from the Sevattur carbonatite complex, India". Mineralogical Magazine 85, n.º 4 (14 de abril de 2021): 588–606. http://dx.doi.org/10.1180/mgm.2021.37.
Texto completo da fonteLemay, Sylvain, e Jean-François Boulé. "Le personnage féminin dans les bandes de l’Action catholique (1935-1938)". ALTERNATIVE FRANCOPHONE 1, n.º 9 (22 de fevereiro de 2016): 93–107. http://dx.doi.org/10.29173/af25711.
Texto completo da fonteSamsuri, Alya, e Salma Khansa. "APPLICATION OF THE PROJECT BASED LEARNING MODEL TO IMPROVE STUDENT LEARNING OUTCOMES IN CLASS IIB FRACTIONAL MATERIAL OF SD NEGERI 4 BANDA ACEH". Jurnal Ilmiah Teunuleh 3, n.º 2 (28 de junho de 2022): 187–201. http://dx.doi.org/10.51612/teunuleh.v3i2.111.
Texto completo da fonteKuna Raj, John. "Characterizing a weathering profile over quartz-mica schists in undulating terrain in Peninsular Malaysia". Warta Geologi 48, n.º 3 (30 de dezembro de 2022): 153–63. http://dx.doi.org/10.7186/wg483202202.
Texto completo da fonteHong, Yong-Eui, Chi-Woo Lee, Gi-Ho Kim, Myo-Geun Yang e Won-Mo Seong. "Triple-band Antenna Using PCB for T-DMB(Band III)/DAB(L-Band)/WiBro". Journal of Korean Institute of Electromagnetic Engineering and Science 18, n.º 2 (28 de fevereiro de 2007): 227–32. http://dx.doi.org/10.5515/kjkiees.2007.18.2.227.
Texto completo da fonteTeses / dissertações sobre o assunto "Bande III"
Jacopin, Gwenolé. "Nanofils de semiconducteurs à grande énergie de bande interdite pour des applications optoélectroniques". Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00746091.
Texto completo da fonteArmougom, Julie. "Nouvelles sources optiques pour la détection d’espèces chimiques dans la bande III". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT077/document.
Texto completo da fonteLaser spectrometry by differential absorption is a well-known technique for standoff detection of chemical species in the atmosphere. The longwave infrared region (LWIR), ranging from 8 to 12 µm is particularly interesting because the absorption bands of many chemical species are intense and non-overlapping. In order to detect those species in the LWIR, there is a need for sources that are spectrally narrow, widely tunable, and delivers high energies. The sources based on second order nonlinear optics are the only technology able to meet those requirements. In this work, we will present the experimental results on two parametric architectures that allows emission in the LWIR for lidar measurements. The first one consists in emitting a beam directly in the LWIR by pumping nonlinear crystals with 2 µm pump lasers. The second architecture consists in amplifying the signal and idler beams coming from a 2 µm OPO, before converting them into the LWIR by difference frequency generation. Those sources are based on the association of new technologies and have the potential to offer a viable solution to a lack of sources emitting in the LWIR
Ridaoui, Mohamed. "Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince". Thèse, Université de Sherbrooke, 2017. http://hdl.handle.net/11143/11118.
Texto completo da fonteAbstract : Silicon-based devices dominate the semiconductor industry because of the low cost of this material, its technology availability and maturity. However, silicon has physical limitations, in terms of mobility and saturation velocity of the carriers, which limit its use in the high frequency applications and low supply voltage i.e. power consumption, in CMOS technology. Therefore, III-V materials like InGaAs and InAs are good candidates because of the excellent electron mobility of bulk materials (from 5000 to 40.000 cm2 /V.s) and the high electron saturation velocity. We have fabricated ultra-thin body (UTB) InAs/InGaAs MOSFET with gate length of 150 nm. The frequency response and ON-current of the presented MOSFETs is measured and found to have comparable performances to the existing state of the art MOSFETs as reported by the other research groups. The UTB MOSFETs were fabricated by self-aligned method. Two thin body conduction channels were explored, In0,75Ga0,25As and a composite InAs/In0,53Ga0,47As. A thin upper barrier layer consisting of InP (3nm) is inserted between the channel and the oxide layers to realized a buried channel. Finally, the Al2O3 (4 nm) was deposited by the atomic layer deposition (ALD) technique. It is well known that the source and drain (S/D) contact resistances of InAs MOSFETs influence the devices performances. Therefore, in our ultra-thin body (UTB) InAs MOSFETs design, we have engineered the contacts to achieve good ohmic contact resistances. Indeed, for this UTB architecture the use of ion implantation technique is incompatible with a low thermal budget and cannot allow to obtain low resistive contacts. To overcome this limitation, an adapted technological approach to define ohmic contacts is presented. To that end, we chose low thermal budget (250°C) silicide-like technology based on Nickel metal. Finally, we have studied and analyzed the resistance of the alloy between Nickel and III-V (Rsheet). MOSFET with two different epilayer structures (In0,75Ga0,25As and a composite InAs/In0,53Ga0,47As) were fabricated with a gate length (LG) of 150 nm. There were few difference of electrical performance of these two devices. We obtained a maximum drain current (ION) of 730 mA/mm, and the extrinsic transconductance (GM, MAX) showed a peak value of 500 mS/mm. The devices exhibited a current gain cutoff frequency fT of 100 GHz and maximum oscillation frequency fmax of 60 GHz for drain to source voltage (VDS) of 0.7 V.
Demangeot, Francois. "Spectrometrie raman des excitations elementaires et de leur couplage dans les nitrures d'elements iii a large bande interdite". Toulouse 3, 1998. http://www.theses.fr/1998TOU30256.
Texto completo da fonteThenot, Isabelle. "Réalisation d'un oscillateur paramétrique optique émettant directement dans la bande III de l'infrarouge avec un pompage à 1,064 micron". Paris 11, 2001. http://www.theses.fr/2001PA112242.
Texto completo da fonteDifferent technological areas are currently waiting for coherent tunable nanosecond sources over spectral range 8 till 12mM. Solutions usually proposed necessitate two frequency conversion steps from a fixed-frequency laser, leading to complex performance monitoring of the system. This thesis aims to achieve such a source in only one non-linear step. An analysis of the non-linear crystal allowing this approach, we built a simply resonant optical parametric oscillator (OPO), based upon silver gallium sulfide (AgGaS2), and pumping in critical type II phase matching at 1. 064mM wavelength by a10HZ Q-switched Nd:YAG laser. This OPO generates nanosecond pulses on wavelengths between 7. 5 and 9. 3mM. The maximum photonic conversion output is close to 10%. In order to complete the study of infrared dedicated non-linear crystals, a second harmonic generation device has been made for studying non-linear features of lithium thioindate (LiInS2). The value of non-linear coefficient d24 (or d35) of LiInS2 crystal deducted from our measures is about 7. 5pm/V, namely about 1/√3 times the value of coefficient d14 (or d36) of AgGaS2 crystal
Galibert, Jean. "Transport quantique dans des semiconducteurs de type iii-v : effet shubnikov-de haas dans l'antimoniure de gallium, effet magnetophonon dans l'antimoniure d'indium". Toulouse 3, 1987. http://www.theses.fr/1987TOU30286.
Texto completo da fonteLevenson, Juan Ariel. "Étude des non-linéarités optiques dynamiques dans les semiconducteurs III-V". Paris 11, 1988. http://www.theses.fr/1988PA112300.
Texto completo da fonteWe have investigated the carrier interactions in highly photoexcited GaAs/GaAlAs. Multiple-Quantum Wells at law-temperatures. The experimental setup consists of two optical parametric generators independently tunable throughout the infrared, giving 10 ps long pulses with peak intensity of 100 MW/cm2. By using the experimental techniques of nonlinear spectroscopy, we are able to isolate the optical nonlinearities due to many-body effects (the screening of the coulomb interaction and the renormalization of the sub-bands), from those that originate from the filling of the phase-space of the carriers. The contribution of phase-space filling to the optical nonlinearity is shown to be greater than that of many-body effects. Our results also indicate that Coulombic screening is weaker in the quasi-2D systems than in bulk materials. The magnitude of the renormalization of the higher-energy sub-bands, obtained through non-linear absorption techniques, is smaller by one order of magnitude when compared with the plasma renormalization observed in luminescence experiments. This results underlines the shortcommings of the usual approximation for the Band-Gap Renormalization as a rigid shift of the whole band structure when states far above the Fermi level are under consideration. The dynamics of the inter-subband relaxation was resolved in our experiments and the characteristic rime for this process was found to be of the order of 20 ps
Desières, Yohan. "Conception et études optiques de composants micro-photoniques sur matériaux III-V à base de structures à bande interdite de photon". Lyon, INSA, 2001. http://theses.insa-lyon.fr/publication/2001ISAL0081/these.pdf.
Texto completo da fonteThe thesis focus on a new type of waveguides that are able to guide light at the wavelength scale thanks to the index periodicity of their cladding. These waveguides are called photonic crystal waveguide and can lead to strong scale reductions of usual photonic crystal waveguide and can lead to strong scale reductions of usual photonic circuits. The FDTD method is developed to design and explore the properties of this waveguides. Experimental demonstration of waveguiding is obtained using a guided luminescence technique and diffraction gratings. A better understanding of the propagation characteristics comes from the comparison between experimental datas and FDTD results. Propagation losses of are found to be quite high (around 10-20dB/100 micrometer). Their origins are however clarified, leading to some solutions for loss-reduced waveguides. Finally, the coupling between a photonic crystal waveguide and a photonic crystal microcavity is investigated for compact wavelength filtering
Desières, Yohan Benyattou Taha. "Conception et études optiques de composants micro-photoniques sur matériaux III-V à base de structures à bande interdite de photon". Villeurbanne : Doc'INSA, 2004. http://docinsa.insa-lyon.fr/these/pont.php?id=desieres.
Texto completo da fonteBeeler, Mark. "Ingénierie quantique de nanostructures à base de semi-conducteurs III-nitrures pour l'optoélectronique infrarouge". Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAY044/document.
Texto completo da fonteGaN/Al(Ga)N nanostructures have emerged during the last decade as promising materials for new intersubband (ISB) optoelectronics devices, with the potential to cover the whole infrared (IR) spectrum. These technologies rely on electron transitions between quantum-confined states in the conduction band of nanostructures –quantum wells (QWs), quantum dots (QDs), nanowires (NWs). The large conduction band offset between III-N compounds, and their sub-ps ISB recovery times make them appealing for ultrafast telecommunication devices and for fast IR optoelectronics in the 3-5 µm band. Furthermore, the large energy of GaN LO phonon (92 meV) opens prospects for room-temperature THz quantum cascade lasers and ISB devices covering the 5-10 THz band, inaccessible to GaAs. A variety of GaN-based ISB optoelectronic devices have recently been demonstrated, including photodetectors, switches and electro-optical modulators. However, a number of issues remain open, particularly concerning the extension towards longer wavelengths and the improvement of electrically pumped devices performance. One of the main challenges to extend the GaN-ISB technology towards the far-IR comes from the polarization-induced internal electric field, which imposes an additional confinement that increases the energetic distance between the electronic levels in the QWs. In order to surmount this constraint, I propose alternative multi-layer QW designs that create a pseudo-square potential profile. The robustness of the designs in terms of variations due to growth uncertainties, and the feasibility of their integration in devices architectures requiring resonant tunneling transport are discussed. Experimental realizations by molecular-beam epitaxy displaying TM-polarized THz absorption are presented. A quantum cascade laser design incorporating pseudo-square QWs is introduced. An alternative approach to obtain square potential profiles is the use of nonpolar orientations. In this thesis, I compare GaN/Al(Ga)N multi-quantum wells grown on a and m nonpolar bulk GaN showing that the best results in terms of structural and optical (interband and ISB) performance are obtained for m-plane structures. Room-temperature ISB absorption in the range of 1.5–5.8 µm is demonstrated, the longer wavelength limit being established by the second order of the Reststrahlen band in GaN. As ISB devices are pushed towards higher efficiencies, the control of carrier relaxation becomes a key aspect for device engineering. Longer intraband lifetimes have been proven to exist in laterally confined systems, which motivates studies to incorporate NWs as active elements in ISB devices. Furthermore, the large NW surface-to-volume ratio allows misfit strain to be elastically released, extending the viable active region size and composition beyond the limits of planar systems or QDs. In this thesis, I report the experimental observation of TM-polarized IR absorption assigned to the s-pz intraband transition in Ge-doped GaN/AlN nanodisks inserted in self-assembled GaN NWs. Results are compared with theoretical calculations accounting for the 3D strain distribution, surface charges and many-body effects.STAR
Livros sobre o assunto "Bande III"
Grazzini, Nello Forti. Divinità, scimmie e segni zodiacali: I dodici mesi grotteschi su bande da Claude III Audran. Milano: Moshe Tabibnia, 2007.
Encontre o texto completo da fonteDietrich, Marc, e Martin Seeliger, eds. Deutscher Gangsta-Rap III. Bielefeld, Germany: transcript Verlag, 2022. http://dx.doi.org/10.14361/9783839460559.
Texto completo da fonte1943-, Mancini Sergio, ed. Banda di fratelli. Milano: TEA, 2002.
Encontre o texto completo da fonteKalt, H. Optical properties of III-V semiconductors: The influence of multi-valley bandstructures. New York: Springer-Verlag, 1996.
Encontre o texto completo da fonteIndonesia. Direktorat Jenderal Pembinaan Badan Peradilan Umum., ed. Masalah-masalah hukum perdata di daerah bekas Kawedanan Idi, Kabupaten Aceh Timur, Propinsi Banda Aceh, daerah hukum Pengadilan Negeri Idi, wilayah hukum Pengadilan Tinggi Banda Aceh. [Jakarta]: Direktorat Jenderal Pembinaan Badan Peradilan Umum, Departemen Kehakiman, 1989.
Encontre o texto completo da fonteKalt, H. Optical properties of III-V semiconductors: The influence of multi-valley band structures. Berlin: Springer-Verlag, 1996.
Encontre o texto completo da fonteAgency, Radiocommunications. MPT 1347 radio interface specification: For commercial trunked networks operating in Band III, sub-bands 1 and 2. London: RA, 1991.
Encontre o texto completo da fonteWinters, Richard D. Beyond band of brothers: The war memoirs of Major Dick Winters. New York: Berkley Caliber, 2005.
Encontre o texto completo da fonteLassen, Christian. Indische Alterthumskunde: Anhang zum III. und IV. Bande. Geschichte des chinesischen und des arabischen Wissens von Indien. Adamant Media Corporation, 2002.
Encontre o texto completo da fonteAnderson, Matty Boy. Bands I Useta Like III. Lulu Press, Inc., 2016.
Encontre o texto completo da fonteCapítulos de livros sobre o assunto "Bande III"
da Silva, E. C. F. "GaAs: conduction-band offsets, valence-band offsets". In Landolt-Börnstein - Group III Condensed Matter, 48–49. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_34.
Texto completo da fonteFernandes da Silva, E. C. "InAs: band structure". In New Data and Updates for III-V, II-VI and I-VII Compounds, 203. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_150.
Texto completo da fonteGutowski, J., K. Sebald e T. Voss. "CdTe: band structure". In New Data and Updates for III-V, II-VI and I-VII Compounds, 310. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_229.
Texto completo da fonteFernandes da Silva, E. C. "InSb: band structure". In New Data and Updates for III-V, II-VI and I-VII Compounds, 430. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_315.
Texto completo da fonteDevaty, R. P. "SiC: valence band offsets". In New Data and Updates for III-V, II-VI and I-VII Compounds, 341. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_254.
Texto completo da fonteCheng, Keh Yung. "Electronic Band Structures of Solids". In III–V Compound Semiconductors and Devices, 57–103. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51903-2_3.
Texto completo da fonteChu, J. "HgS: band structure, energy gaps". In New Data and Updates for III-V, II-VI and I-VII Compounds, 389–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_287.
Texto completo da fonteFernandes da Silva, E. C. "AlxGa1–xAsySb1–y: band structure". In New Data and Updates for III-V, II-VI and I-VII Compounds, 78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_63.
Texto completo da fonteHönerlage, B. "AgI: band structure, band gap, effective masses". In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_35.
Texto completo da fonteMeyer, B. K. "InN, wurtzite modification: band structure". In New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds, 265. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-48529-2_122.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Bande III"
Pérez García, Juan Carlos. "‘El vecino 4’: “superhéroes” de barrio". In III Congreso Internacional de Investigación en Artes Visuales :: ANIAV 2017 :: GLOCAL. Valencia: Universitat Politècnica València, 2017. http://dx.doi.org/10.4995/aniav.2017.4949.
Texto completo da fonteGao, Robert X., e Ruqiang Yan. "A Hybrid Signal Processing Technique for Bearing Defect Severity Estimation". In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63552.
Texto completo da fontePan, Biwei, Jerome Bourderionnet, Vincent Billault, Arnaud Brignon, Sarvagya Dwivedi, Marcus Dahlem, Cian Cummins et al. "III-V-on-silicon nitride narrow-linewidth tunable laser based on micro-transfer printing". In Optical Fiber Communication Conference. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/ofc.2023.th3b.5.
Texto completo da fonteTakahashi, Y., M. Kalafatis, J. P. Girma e D. Meyer. "ABNORMALITY OF THE N-TERMINAL PORTION OF VON WILLEBRAND FACTOR (FRAGMENT Sp III ) IN TYPE IIA AND IIC VON WILLEBRAND DISEASE". In XIth International Congress on Thrombosis and Haemostasis. Schattauer GmbH, 1987. http://dx.doi.org/10.1055/s-0038-1644645.
Texto completo da fonteChelucci, C., H. J. Hassan, R. Guerriero, A. Leonardi, G. Mattia e C. Peschle. "POLYMORPHIC SITES IN FACTOR X GENE". In XIth International Congress on Thrombosis and Haemostasis. Schattauer GmbH, 1987. http://dx.doi.org/10.1055/s-0038-1643836.
Texto completo da fonteMönch, Winfried. "Adsorbate-induced Surface States and Fermi-level Pinning at Semiconductor Surfaces". In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.tuc1.
Texto completo da fontesoons, H., T. Jansen-claessen, G. C. Tans e H. C. Hemker. "HEPARIN CATALYZED FACTOR XIa INHIBITION BY ANTITHROMBIN III". In XIth International Congress on Thrombosis and Haemostasis. Schattauer GmbH, 1987. http://dx.doi.org/10.1055/s-0038-1643768.
Texto completo da fonteKarges, H. E., G. Zettlemeiβl, H. Naumann, U. Eberhard e M. Bröker. "PURIFICATION AND CHARACTERIZATION OF GENTECHNOLOGICALLY PREPARED ANTITHROMBIN III". In XIth International Congress on Thrombosis and Haemostasis. Schattauer GmbH, 1987. http://dx.doi.org/10.1055/s-0038-1643684.
Texto completo da fonteBertolet, Daniel C., Jung-Kuei Hsu e Kei May Lau. "Hole eigenenergies in GaAsP/AlGaAs single quantum wells with biaxial tensile strain". In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tue7.
Texto completo da fonteVan de Put, Maarten. "Band-to-band tunneling in III-V semiconductor heterostructures". In IEEE EUROCON 2013. IEEE, 2013. http://dx.doi.org/10.1109/eurocon.2013.6731011.
Texto completo da fonteRelatórios de organizações sobre o assunto "Bande III"
García Zaballos, Antonio, e Claudia M. Salazar Suárez. Sector de telecomunicaciones en Honduras. Inter-American Development Bank, setembro de 2012. http://dx.doi.org/10.18235/0007651.
Texto completo da fonteMeth, M. REDESIGN OF BOOSTER BAND II CAVITY. Office of Scientific and Technical Information (OSTI), julho de 1999. http://dx.doi.org/10.2172/1150608.
Texto completo da fonteHuffaker, Diana, Seth Hubbard e Andrew Norman. Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells. Office of Scientific and Technical Information (OSTI), julho de 2015. http://dx.doi.org/10.2172/1347995.
Texto completo da fonteHeifets, Samuel A. Narrow-band Impedance of the PEP-II Collimators. Office of Scientific and Technical Information (OSTI), abril de 1999. http://dx.doi.org/10.2172/9894.
Texto completo da fonteFleury, Wayne, e Jan Ove Toskedal. PR-535-143745-R01 ART Scan Qualification Study. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), novembro de 2015. http://dx.doi.org/10.55274/r0010879.
Texto completo da fonteBlaskiewicz M., J. M. Brennan e A. Ratti. Impedance of Booster Band II Cavity and Associated Instabilities. Office of Scientific and Technical Information (OSTI), agosto de 1992. http://dx.doi.org/10.2172/1131601.
Texto completo da fontePlotkin, M., e A. Ratti. SOME DESIGN CONSIDERATIONS FOR THE NEW BAND II SINGLE GAP CAVITY. Office of Scientific and Technical Information (OSTI), novembro de 1990. http://dx.doi.org/10.2172/1150563.
Texto completo da fonteWalton, James. Thin Film Group II-VI Solar Cells Based on Band-Offsets. Portland State University Library, janeiro de 2000. http://dx.doi.org/10.15760/etd.435.
Texto completo da fonteButler, Linda, Gregory A. Chrislip e Vicki Kondo. Canopy arthropods at Fernow Experimental Forest in West Virginia's Allegheny Mountain section: III : families of arthropods on foliage and under burlap bands. West Virginia University Agricultural Experiment Station, janeiro de 1995. http://dx.doi.org/10.33915/agnic.605.
Texto completo da fonteButler, Linda, Gregory A. Chrislip e Vicki Kondo. Canopy arthropods at Fernow Experimental Forest in West Virginia's Allegheny Mountain section: III : families of arthropods on foliage and under burlap bands. West Virginia University Agricultural Experiment Station, janeiro de 1995. http://dx.doi.org/10.33915/agnic.714.
Texto completo da fonte