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Artigos de revistas sobre o assunto "Antiferroelectric materials"
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Lu, Xue-Zeng, e James M. Rondinelli. "Hybrid improper antiferroelectricity—New insights for novel device concepts". MRS Advances 5, n.º 64 (2020): 3521–45. http://dx.doi.org/10.1557/adv.2020.450.
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AbstractAntiferroelectrics have been studied for decades, with most research focused on PbZrO3 or related compounds obtained through chemical substitution. Although there are several important antiferroelectrics found in AVO4 (A=Dy, Bi), orthorhombic ABC semiconductors (e.g., MgSrSi) and hydrogen-bonded antiferroelectric materials, experimentally demonstrated antiferroelectrics are far less common. Furthermore, antiferroelectrics have potential applications in energy storage and for strain and force generators. In recent years, hybrid improper ferroelectrics have been intensively studied, along which the hybrid improper antiferroelectric phase was proposed and demonstrated in (001) Ruddlesden−Popper A3B2O7 thin films from first-principles calculations. Later, the hybrid improper antiferroelectric phase was discovered experimentally in several Ruddlesden−Popper perovskites in bulk. Across the hybrid improper ferroelectric-antiferroelectric phase transition, several interesting phenomena were also predicted. In this snapshot review, we describe recent progress in hybrid improper antiferroelectricity.
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Yang, Dong, Jing Gao, Liang Shu, Yi-Xuan Liu, Jingru Yu, Yuanyuan Zhang, Xuping Wang, Bo-Ping Zhang e Jing-Feng Li. "Lead-free antiferroelectric niobates AgNbO3 and NaNbO3 for energy storage applications". Journal of Materials Chemistry A 8, n.º 45 (2020): 23724–37. http://dx.doi.org/10.1039/d0ta08345c.
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Zhou, Long Jie, Georg Rixecker, André Zimmermann e Fritz Aldinger. "Composition Dependent Fatigue in Antiferroelectric PZST Ceramics Induced by Bipolar Electric Cycling". Materials Science Forum 475-479 (janeiro de 2005): 1193–96. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1193.
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Bipolar electric fatigue in antiferroelectrics of the lead zirconate titanate stannate ceramics family was investigated. Variations in strain hysteresis loops and damages in microstructure of the materials due to the electric cycling were analyzed. The materials showed symmetric or asymmetric suppression of strain hysteresis loop, normal or diffuse AFE-FE phase transition and intact or damaged microstructure after 5×10-7 cycles, indicating a strong composition dependent fatigue effect and the corresponding mechanism. In general, the antiferroelectric materials exhibited much higher fatigue resistance than ferroelectric ceramics reported previously.
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Kho, Wonwoo, Hyunjoo Hwang, Jisoo Kim, Gyuil Park e Seung-Eon Ahn. "Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures". Nanomaterials 13, n.º 3 (21 de janeiro de 2023): 439. http://dx.doi.org/10.3390/nano13030439.
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Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroelectrics are promising non-volatile memory materials because of their ability to maintain polarization, even when an external electric field is removed. Recently, it has been reported that HfO2 thin films compatible with complementary metal–oxide–semiconductor (CMOS) processes exhibit ferroelectricity even at a thickness of less than 10 nm. Among the ferroelectric-based memories, ferroelectric tunnel junctions are attracting attention as ideal devices for improving integration and miniaturization due to the advantages of a simple metal–ferroelectric–metal two-terminal structure and low ultra-low power driving through tunneling. The FTJs are driven by adjusting the tunneling electrical resistance through partial polarization switching. Theoretically and experimentally, a large memory window in a broad coercive field and/or read voltage is required to induce sophisticated partial-polarization switching. Notably, antiferroelectrics (like) have different switching properties than ferroelectrics, which are generally applied to ferroelectric tunnel junctions. The memory features of ferroelectric tunnel junctions are expected to be improved through a broad coercive field when the switching characteristics of the ferroelectric and antiferroelectric (like) are utilized concurrently. In this study, the implementation of multiresistance states was improved by driving the ferroelectric and antiferroelectric (like) devices in parallel. Additionally, by modulating the area ratio of ferroelectric and antiferroelectric (like), the memory window size was increased, and controllability was enhanced by increasing the switchable voltage region. In conclusion, we suggest that ferroelectric and antiferroelectric (like) parallel structures may overcome the limitations of the multiresistance state implementation of existing ferroelectrics.
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Czuprynski, K., J. Gasowska, M. Tykarska, P. Kula, E. Sokól, W. Piecek, J. M. Oton e M. P. L. Castillo. "Orthoconic antiferroelectric liquid crystalline materials". Journal of Optical Technology 72, n.º 9 (1 de setembro de 2005): 655. http://dx.doi.org/10.1364/jot.72.000655.
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Chaudhary, Shristi, Sheela Devi e Shilpi Jindal. "Antiferroelectric Lead based Perovskite Material properties andapplications: A Review". E3S Web of Conferences 509 (2024): 03002. http://dx.doi.org/10.1051/e3sconf/202450903002.
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In this review paper, the discussion is about some of the lead based antiferroelectric (AFE) perovskite materials. The antiferroelectric perovskite materials mainly lead zirconate (PZ) and lead zirconate titanate (PZT) prepared by solid state reaction route with their structure change at different concentrations, phase transition, their dielectric properties ormore. These materials caught the attention of the researchers because of their use in high energy storage devices, pyroelectric devices, sensors, cooling devices, pulse power generators and have many more applications. The reason could be their electric field phase transformation between the antiferroelectric (AFE) state and ferroelectric (FE) state and the phase switching property can be one of the strong factors responsible for the performance of the PZ based materials. Thecentral focus of this review is to briefly explain the continuous increase in research in the antiferroelectric materials by enhancing the PZ with many dopants. We mainly address PZ and PZT solid solution properties.
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Yin, Jia-Hang, Guo-Long Tan e Cong-Cong Duan. "Antiferroelectrics and Magnetoresistance in La0.5Sr0.5Fe12O19 Multiferroic System". Materials 16, n.º 2 (4 de janeiro de 2023): 492. http://dx.doi.org/10.3390/ma16020492.
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The appearance of antiferroelectrics (AFE) in the ferrimagnetism (FM) system would give birth to a new type of multiferroic candidate, which is significant to the development of novel devices for energy storage. Here we demonstrate the realization of full antiferroelectrics in a magnetic La0.5Sr0.5Fe12O19 system (AFE+FM), which also presents a strong magnetodielectric response (MD) and magnetoresistance (MR) effect. The antiferroelectric phase was achieved at room temperature by replacing 0.5 Sr2+ ions with 0.5 La2+ ions in the SrFe12O19 compound, whose phase transition temperature of ferroelectrics (FE) to antiferroelectrics was brought down from 174 °C to −141 °C, while the temperature of antiferroelectrics converting to paraelectrics (PE) shifts from 490 °C to 234 °C after the substitution. The fully separated double P-E hysteresis loops reveal the antiferroelectrics in La0.5Sr0.5Fe12O19 ceramics. The magnitude of exerting magnetic field enables us to control the generation of spin current, which induces MD and MR effects. A 1.1T magnetic field induces a large spin current of 15.6 n A in La0.5Sr0.5Fe12O19 ceramics, lifts up dielectric constants by 540%, and lowers the resistance by −89%. The magnetic performance remains as usual. The multiple functions in one single phase allow us to develop novel intelligent devices.
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Hu, Tengfei, Zhengqian Fu, Zhenqing Li, Ziyi Yu, Linlin Zhang, Heliang Yao, Kun Zeng et al. "Electric-induced devil’s staircase in perovskite antiferroelectric". Journal of Applied Physics 131, n.º 21 (7 de junho de 2022): 214105. http://dx.doi.org/10.1063/5.0094919.
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Antiferroelectric ceramics can realize ultra-high energy storage, which benefits from transformation between an antiferroelectric phase and a ferroelectric phase. Understanding the mechanism of such phase transition is the key point for building the structure-property correlation. Here, we report the observation of electric-induced devil’s staircase in the course of antiferroelectric–ferroelectric phase transition in PbZrO3-based antiferroelectric ceramics by in situ transmission electron microscopy. The dynamic evolution as-revealed in both reciprocal- and real-space involves stepwise rather than monotonic increase in modulation periods along with simultaneous proliferation of nanodomains. Desynchrony of phase transition is observed for incommensurate domains with different initial modulation periods within a single antiferroelectric domain. Then, the synergistic effect of the devil's staircase and as small as possible the initial modulation period is believed to contribute to the superior energy-storage performance. These findings will be helpful for the development of theories for antiferroelectric–ferroelectric phase transition and the design of high-power antiferroelectric materials.
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Shan, Pai, e Xifa Long. "Symmetry of antiferroelectric crystals crystallized in polar point groups". IUCrJ 9, n.º 4 (28 de junho de 2022): 516–22. http://dx.doi.org/10.1107/s2052252522006017.
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Symmetry is an essential concept in physics, chemistry and materials science. Comprehensive, authoritative and accessible symmetry theory can provide a strong impetus for the development of related materials science. Through the sustained efforts of physicists and crystallographers, researchers have mastered the relationship between structural symmetry and ferroelectricity, which demands crystallization in the 10 polar point groups. However, the symmetry requirement for antiferroelectricity is still ambiguous, and polar crystals possessing antiferroelectricity seem contradictory. This work systematically and comprehensively studies the transformation of dipole moments under symmetry operations, using accessible geometric methods and group theory. The results indicate crystals that crystallize in polar point groups 2 (C 2), m (C 1h), mm2 (C 2v), 4 (C 4), 4mm (C 4v), 3m (C 3v), 6 (C 6) and 6mm (C 6v) also possess anti-polar structure and are capable of Kittel-type antiferroelectricity. The anti-polar direction of each point group is also highlighted, which could provide a straightforward guide for antiferroelectric property measurement. Like ferroelectric crystals, antiferroelectric crystals belonging to polar point groups have great potential to become a family of important multifunctional electroactive and optical materials. This contribution refines antiferroelectric theory, will help facilitate and stimulate the discovery and rational design of novel antiferroelectric crystals, and enrich the potential functional applications of antiferroelectric materials.
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Chattopadhyay, Soma, Pushan Ayyub, R. Pinto e M. S. Multani. "Synthesis of thin films of polycrystalline ferroelectric BiNbO4 on Si by pulsed laser ablation". Journal of Materials Research 13, n.º 5 (maio de 1998): 1113–16. http://dx.doi.org/10.1557/jmr.1998.0155.
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The stibiotantalite (ABO4) family includes a number of ferroelectrics and antiferroelectrics with excellent potential for applications. We report the deposition of phase-pure, polycrystalline thin films of BiNbO4 on Si(100) substrates using pulsed laser ablation. The deposition conditions were optimized with respect to substrate temperature, laser parameters, and the ambient oxygen pressure. The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, and Raman spectroscopy, while their microstructure was studied by atomic force microscopy and scanning electron microscopy. Dielectric hysteresis studies indicated that films with a thickness below ≈250 nm are ferroelectric, while thicker ones are antiferroelectric.
Teses / dissertações sobre o assunto "Antiferroelectric materials"
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Yu, Yongjian. "FIELD INDUCED ANTIFERROELECTRIC PHASE SWITICHING BEHAVIOR IN LEAD STRONTIUM ZIRCONATE TITANATE CERAMICS". University of Cincinnati / OhioLINK, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=ucin971277493.
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JEEVANANTHAM, MUTHUKUMARAN. "GRAIN SIZE, TEMPERATURE AND FATIGUE EFFECTS OF FIELD-INDUCED ANTIFERROELECTRIC-FERROELECTRIC PHASE SWITCHING BEHAVIOR IN STRONTIUM ZIRCONATE TITANATE CERAMICS". University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin990814497.
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Herath, Mudiyanselage Dimuthu Prasad Wijethunge. "Theoretical investigation of ferroelectric properties in 2D materials and their applications". Thesis, Queensland University of Technology, 2022. https://eprints.qut.edu.au/235394/1/Dimuthu%2BWijethunge%2BThesis%283%29.pdf.
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This thesis examined two-dimensional ferroelectric materials and their applications using density functional theory calculations. The research has revealed several novel applications for 2D ferroelectric materials. It illustrated that ferroelectric materials can be used to modify electronic, photocatalytic and magnetic properties of two-dimensional materials. In addition to exploring applications, new two-dimensional ferroelectric material which exhibits metallic properties was discovered through high through output search. Two-dimensional ferroelectric metals are extremely rare and only handful of materials were ever discovered.
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Arbouz, Hamida. "Étude des modes de vibration de basses fréquences du phosphate diacide d'ammonium et du phosphate diacide de potassium deutéré". Nancy 1, 1986. http://www.theses.fr/1986NAN10024.
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Mesures entre 7 et 300K, dans le domaine 15-400 CM**(-)1 et réalisation des spectres du cristal d'ADP, dans la phase anti-ferroélectrique, en lumière polarisée. Détermination des paramètres des modes de vibration par ajustement au moyen d'un modèle de la fonction diélectrique. Mise en évidence de l'importance des modes de basse fréquence, liés aux mouvements collectifs des protons, dans le mécanisme de la transition de phase
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Garcia, Ramirez Emmanuel Armando. "Etude et optimisation de matériaux diélectriques et électrodes déposés par ALD pour structures nano-poreuses". Electronic Thesis or Diss., Normandie, 2024. http://www.theses.fr/2024NORMC226.
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Cette thèse examine les films minces d’oxyde de hafnium (HfO2) pour leur potentiel dans lesnanocondensateurs, répondant aux besoins en miniaturisation et haute performance del’électronique moderne. Le HfO2 est compatible avec la Déposition par Couches Atomiques(ALD), ce qui permet des dépôts minces précis et homogènes, essentiels pour garantir la fiabilitédes dispositifs électroniques. Les films minces sont soumis à différentes techniques de fabricationet de caractérisation pour analyser leur morphologie et leurs propriétés électriques, notamment laconstante diélectrique, la tension de claquage et la capacité de stockage d’énergie. Cette approchepermet de déterminer comment optimiser ces matériaux, à la fois en configurations amorphes eten structures cristallines, pour des performances maximales.Pour les diélectriques amorphes linéaires, HfO2 est combiné avec d’autres oxydes, tels quel’alumine et la silice, dans des structures de nanolaminés et de solutions solides. Ces combinaisonssont conçues pour stabiliser la constante diélectrique et offrir une résistance au claquage,améliorant l'efficacité du stockage d’énergie. La linéarité et la stabilité de ces matériaux amorphesles rendent particulièrement adaptés aux applications nécessitant une capacitance stable.L’étude approfondit aussi les propriétés des diélectriques cristallins non linéaires, dopés avec dusilicium ou de la zircone. Différentes températures de déposition et de recuit révèlent descomportements ferroélectriques et antiferroélectriques, augmentant la densité d’énergie et lastabilité. Cependant, les matériaux ferroélectriques, bien que prometteurs pour des applications àhaute densité, sont sensibles aux variations de tension, ce qui limite leur usage dans les applicationsnécessitant une capacitance constante. Les matériaux antiferroélectriques, en revanche, présententune stabilité accrue face aux variations de tension, mais ils font encore face à des défis d’efficacitéénergétique et de gestion thermique. La recherche souligne la variabilité de la constantediélectrique comme un défi majeur pour l'utilisation de ces matériaux dans des applicationsnécessitant une capacitance stable, comme le filtrage de signaux. Les matériaux nanolaminés etles solutions solides sont privilégiés pour obtenir une capacitance linéaire, mais leur efficacité restelimitée en termes de permittivité. L’exploration des phases non linéaires, cependant, ouvre la voieà des performances accrues dans certaines applications avancées.En conclusion, cette étude apporte un éclairage précieux sur les films minces d’oxyde de hafniumet leur rôle dans les nanocondensateurs, en explorant des solutions d’optimisation pour améliorerles performances diélectriques, notamment par les techniques de fabrication et les compositionsde matériaux. Les matériaux linéaires et non linéaires présentent chacun des avantages distincts,mais des recherches supplémentaires sont nécessaires pour surmonter les défis liés à la durabilité,l’efficacité électrique et la gestion thermique, afin de développer des condensateurs plusperformants pour les technologies électroniques modernesThis research investigates the use of hafnium oxide (HfO2)-based thin films in nanocapacitors, focusing on both their linear and non-linear electrical properties to meet the growing demands of high-performance and miniaturized electronic devices. Starting with the fundamental physics of energy storage capacitors, the investigation highlights the essential characteristics of effective dielectric materials, such as a high dielectric constant and a substantial band gap. Hafnium-based materials are particularly promising due to their compatibility with Atomic Layer Deposition (ALD), which allows for precise and uniform thin-film deposition—crucial for ensuring reliable performance in electronic devices.To understand the potential of these materials, various fabrication and characterization techniques were employed. This includes specific deposition processes to create the thin films and morphological tests to study the physical structure of the capacitors. Electrical testing plays a key role in evaluating critical parameters like dielectric constant, breakdown voltage, and overall energy storage capacity. By analyzing these factors, a comprehensive view of how both linear and non-linear hafnium-based dielectrics perform is provided.When exploring linear, amorphous hafnium-based dielectrics, HfO2 is combined with aluminum oxide and silicon dioxide to enhance dielectric properties. Different configurations, such as nanolaminates and solid solutions, are tested to find the optimal balance. The goal is to achieve materials that maintain a high dielectric constant and resist voltage breakdown, thereby improving their ability to store energy efficiently. On the other hand, a detailed look into non-linear, crystalline dielectrics examines the effects of doping hafnium oxide with elements like zirconia and silicon. Different deposition and annealing temperatures are assessed for their impact on crystalline structure and polarization behavior, revealing complex ferroelectric and antiferroelectric behaviors that could offer high energy density and stability.The findings suggest that while ferroelectric materials might not be suitable for applications requiring linear capacitance due to their sensitivity to voltage variations, antiferroelectric materials show promise. However, they still face challenges related to electrical efficiency and thermal management. Finding materials that can effectively stabilize voltage variations is crucial, as capacitors are increasingly used to manage these fluctuations in modern electronics.A significant challenge identified is the variability in the dielectric constant, which can limit the use of these materials in applications demanding stable capacitance, such as signal filtering. To address this issue, solid solutions and laminated materials, which provide consistent linear capacitance, are prioritized. Although these materials are effective up to a certain permittivity threshold, exploring non-linear phases opens the door to potentially higher performance under specific conditions.In summary, understanding of HfO2-based thin films and their role in nanocapacitors is advanced by this research. By examining both linear and non-linear dielectric materials, insights into how to optimize fabrication techniques and material compositions to improve dielectric properties are provided. Ongoing research into issues like material endurance, electrical efficiency, and thermal management is essential for developing reliable and high-performing capacitors that meet the evolving demands of modern electronic technologies
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Pedreira, Aline Moojen. "Estudo estrutural e eletro-óptico da fase B2 de materiais com moléculas de banana". Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-20102006-121009/.
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Com base em resultados de DSC, análise estrutural por difração de raios X e observações de textura, analisamos os efeitos da mistura do solvente apolar hexadecano com cristais líquidos formados pelas moléculas banana 1,3-fenilenobis[4-(4-tetradecilfeniliminometil)benzoato] (MB14) e 4-cloro-1,3-fenilenobis[4-(4-tetradecilfeniliminometil) benzoato] (MB14Cl). Propusemos um modelo estrutural para explicar as modificações causadas no arranjo molecular da fase B2 pelo acréscimo gradual do solvente. Observamos a diminuição da temperatura de transição entre esta fase e a fase isotrópica, porém a transição entre a fase B2 e a fase a temperaturas mais baixas não sofre alteração significativa. Para concentrações em massa de hexadecano de 45 % no MB14 e de 55 % no MB14Cl, a fase B2 já não é mais observada. Para o MB14Cl, resultados de difração de raios X revelaram que as moléculas de hexadecano penetram entre as camadas esméticas, aumentando a distância intercamada em torno de 3 Å. Acima de 5 % de concentração do solvente, o aumento da distância intercamada satura e ocorre segregação de fases em escala nanométrica. O comportamento da fase B2 sob a ação de um campo elétrico variável também foi analisado para o MB14 puro. Apresentamos um modelo para a linha de base do sinal de corrente de polarização, que leva em conta a não linearidade da condutividade para valores altos de campo aplicado, devido à movimentação iônica na amostra. Para o cálculo da viscosidade, consideramos a não linearidade da constante dielétrica com o campo aplicado, e adaptamos outro modelo, inicialmente utilizado para cristais líquidos ferroelétricos sob a ação de um campo quadrado, para o caso de um cristal líquido antiferroelétrico sob um campo triangular. Quanto aos dois tipos de arranjo molecular da fase B2, o arranjo homoquiral se mostrou bem mais estável que o racêmico, mesmo sob aplicação de campo triangular, quando este último é inicialmente favorecido. O arranjo racêmico se apresentou mais viscoso que o arranjo homoquiral, contrariando nossas previsões.Based on DSC results, structural analysis by X-ray diffraction and texture observations, we observed the effects of mixing the nonpolar solvent hexadecane with the banana molecules liquid crystals ,3-phenilenebis[4-(4-tetradecilpheniliminometil)benzoate] (MB14) and 4-chloro-1,3-phenilenebis[4-(4-tetradecilpheniliminometil) benzoate] (MB14Cl). We propose a structural model to explain the changes in the molecular ordering of the B2 phase caused by the gradual increase of the solvent. We observed a decreasing of the transition temperature between B2 and isotropic phases, however the transition between B2 and lower temperature phases did not change significantly. For hexadecane concentrations above 45 wt% in MB14 and 55 wt% in MB14Cl, the B2 phase is no longer present. In MB14Cl, X-ray diffraction results showed that the hexadecane molecules penetrate between the smectic layers, increasing the interlayer spacing by about 3 Å. Above 5 wt% of solvent concentration, the increasing of the interlayer spacing saturates, and a phase segregation in nanometric scale occurs. The behavior of the B2 phase under variable electric field was also analysed for the pure MB14. We present a model for the baseline of the polarization current signal, which considers the non-linearity of the conductivity for high values of applied field, due to the presence of ions in the sample. In order to calculate the viscosity, we considered the non-linearity of the dielectric constant with the applied field, and adapted another model, initially used in ferroelectric liquid crystals under rectangular field, for the case of an antiferroelectric liquid crystal under triangular field. Concerning the two kind of molecular ordering in the B2 phase, the homoquiral ordering proved to be far more stable than the racemic, even under triangular field, when the latest is favored. Our measurements resulted in a racemic ordering more viscous than the homoquiral, going against our predictions.
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Liu, Zhen. "Energy Storage and Conversion investigations in ferroelectric / antiferroelectric materials". Phd thesis, 2021. http://hdl.handle.net/1885/250954.
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With the ever-increasing global demand for new energy and modern technology, the investigations in advanced ferroelectrics (FE) and antiferroelectric (AFE) ceramics is getting more and more urgent. The phase structure and phase transition behaviors of FE and AFE materials can be influenced by various external stimuli, such as temperature and pressure, and thus offer great possibilities for different applications. With this bearing in mind, several energy related effects in FE/AFE materials are studied in this thesis, including the pyroelectric effect, the explosive energy conversion effect, and the electrocaloric effect. The studies will offer more understanding about FE/AFE materials and pave the way for speeding up the development of FE/AFE materials for real energy harvesting applications.
Firstly, the pyroelectric effect of 0.97(0.99Bi0.5Na0.5TiO3-0.01BiAlO3)-0.03K0.5Na0.5NbO3 (BNT-BA-KNN) is investigated. The depolarization temperature of the BNT-BA-KNN ceramics is 118 oC. At room temperature, a large pyroelectric coefficient (p ~3.7*10-8Ccm-2K-1) is achieved. Moreover, the Figure of merits Fi, Fv, and Fd are determined as high as 1.32*10-10m/V, 2.89*10-2m2/C, 1.15*10-5Pa-1/2 at 1 kHz. The temperature dependent study suggests an excellent temperature stability of p and figures of merits during RT~85oC. The high pyroelectric properties and excellent thermal stability of BNT-BA-KNN reveal its promising potential as a lead-free candidate for infrared temperature detector materials. Secondly, the explosive energy conversion effect is studied in the (Ag1-xKx)NbO3 FE materials. Optimized (Ag0.935K0.065)NbO3 (AKN) is demonstrated to show the best explosive energy conversion performance, being able to display a FE-AFE phase transition under a low hydrostatic pressure of 350 MPa. The AKN ceramics also possess a stable high polarization from room temperature to 150 oC. A device has been designed and fabricated and the shock wave experiment shows that the AKN possesses a record-high energy storage density of 5.401 J/g, and enable a pulse current of 22 A within 1.8 microseconds, which is better than that of the commercially employed Pb(Zr,Ti)O3. A detailed study on the structural transition has been conducted using the TEM and in-situ neutron diffraction technique. With increasing hydrostatic pressure, the disappearance of 1/2(301)p, 1/2(321)p and 1/2(341)p reflections and appearance of 1/4(443)p and 1/4(229)p further confirms the pressure driven FE-AFE phase transition. A phenomenological theory is also employed to rationalize the pressure driven FE-AFE phase transition. The explosive energy conversion effect has also been demonstrated in NaNbO3 (NN) ceramics. With increasing pressure to 450 MPa, a sharp FE-AFE transition and depolarization behavior can be observed for NN ceramics. The FE-AFE phase transition was further supported structurally via in-situ neutron diffraction measurement. The polarization of NN can keep stable (~30 uC/cm2) over a wide temperature range of 20-180oC, which adds to its suitability for explosive energy conversion application. The investigation results of AKN and NN under pressure will serve as a guidance for further development of new FE materials and devices for energy conversion application. Finally, the electrocaloric effect of a compositionally modulated (Pb0.97-xLa0.02Bax)(Zr0.58Sn0.29Ti0.13)O3 (PLZST) (x=0, 0.08, 0.09, 0.11) ceramics is investigated. With increasing Ba doping level, the sharp FE-AFE-paraelectric (PE) phase transition sequence with increasing temperature is gradually immerged into a diffused FE-PE phase transition. Moreover, the Curie temperature decreases down to around room temperature. As a result, a large electrocaloric effect (1.2 K) and wide electrocaloric temperature span (112 K), are simultaneously achieved in PLZST with x=0.11. This work provides a novel method to simultaneously realize high electrocaloric effect and large temperature span.
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Lu, Teng. "Structure and Property Evolution Induced by the Phase Transitions in Several Antiferroelectric Materials". Phd thesis, 2017. http://hdl.handle.net/1885/144426.
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Antiferroelectric (AFE) materials are an important group of
functional materials showing unique properties such as double
polarization-electric field (P-E) hysteresis loop, and charge
release under the pressure and temperature. These performances
are strongly connected to the structural phase transitions
induced by external conditions. Many investigations were carried
out to optimize their properties but the structure-property
relationship of such AFE materials still remain unclear. With
this bearing in mind, in this thesis, I firstly investigate the
crystal structure, domain structure and properties evolution
under the external stimuli such as electric-field (E-field),
mechanical force, and temperature in the typical PbZrO3-based AFE
materials. Secondly, a systematic study was conducted on the
doped silver niobate ceramics to understand the impacts of the
chemical composition and E-field cycling on these novel lead-free
AFE materials.
The targeted materials of typical PbZrO3-based samples were
selected as La/Nb doped Pb(Zr, Sn, Ti)O3 ternary systems with the
composition Pb0.97La0.02(Zr0.56Sn0.33Ti0.11)O3 (PLZST1),
Pb0.99(Nb0.02Zr0.73Sn0.21Ti0.04)O3 (PNZST1) and
Pb0.99(Nb0.02Zr0.65Sn0.28Ti0.05)O3 (PNZST2). These three
compositions are representative, supplying diverse phase
transition behaviours for studying. The in situ neutron powder
diffraction (NPD) of the PLZST1 material reveals that the
pseudo-tetragonal AFE phase is transferred into the rhombohedral
FE phase with an application of the sufficient E-field, and
recovers after withdrawal of the external field. The resultant
average structure change as a function of the E-field is in
accordance with the reversible AFE-FE phase transition. However,
the ω dependent NPD patterns suggest this process is not fully
reversible: in the induced FE state, the strain exhibits an
elliptical distribution, which in turn leads to significant
preferred orientation in the final AFE state. The formation of
this preferred orientation provides an explanation for the
properties variation appearing in AFE materials after exposure to
the sufficiently high E-field.
X-ray diffraction pattern of PNZST1 sample indicates the
orthorhombic AFE phase while the result of NPD contradicts this
conclusion with a rhombohedral FE phase. After careful
characterization of the surface and bulk properties, it is found
that the near surface and bulk regions show different phases.
Additionally, the surface processing such as polishing and
heat-treatment can induce an AFE/FE phase transition within
micrometres of the surface. The in-situ hydrostatic-pressure
neutron diffraction proves that the mechanical force helps
stabilize the AFE phase of this composition. Therefore, the
surface processing induced phase transitions can be attributed to
the change of states of residual stress.
The in-situ NPD studies of PNZST2 material describe its
structural variation as a function of E-field and temperature.
Through the mode decomposition approach, the relationships
between AFE/FE modes and octahedral rotation mode were
systematically investigated. At room temperature, the pristine
AFE phase can be poled into the meta-stable FE phase by applying
the external E-field. At this stage, both AFE and FE phases
consist of modes associated with octahedral rotation and A-site
ionic displacements. The temperature-induced phase transition
indicates that the octahedral rotation and ionic displacements
are weakly coupled in the room-temperature FE phase and decoupled
in the high-temperature FE phase. Furthermore, both temperature
and E-field-induced phase transitions between the AFE and
high-temperature FE phase demonstrate the critical role of
coupling between the octahedral rotation and A-site ionic
displacements in AFE structure stabilization.
The evolution of structure and electrical properties with
composition in (1-x)AgNbO3-xLiTaO3 (ANLT100x) (0 ≤ x ≤ 0.09)
ceramics have been systematically investigated by diffraction
techniques, complemented by dielectric and polarisation
measurements. The symmetry mode decomposition and Rietveld
refinement of distortive modes were firstly used to analyse the
origin of the anti/ferroelectricity observed. The in/out phase
octahedral tilting around the a-axis (H2 mode) and the
antiparallel ionic displacements (Λ3 mode), present large
amplitudes in the pure AgNbO3. These two modes vanish
progressively with increasing x and their amplitudes experience a
sudden drop when x = 0.053. Accompanied by the disappearance of
these two modes, a new phase with R3c symmetry appears and grows
with further increasing LiTaO3 content. The composition dependent
amplitudes of the primary modes, and R3c phase fractions, lead to
a comprehensive understanding of the dielectric and ferroelectric
properties affected by LiTaO3. For the composition located around
the phase boundary, x = 0.045 and 0.06, FE wake-up effects were
detected. The refinement of neutron diffraction patterns after
different electric cyclicity describe an increase of
ferroelectricity associated with the R3c phase fraction
increments i.e., field-cycling-induced phase transition from
Pmc21 to R3c. The local probes such as the electron diffraction
and piezoresponse microscopy (PFM), show that the in/antiphase
octahedral rotation around the <001>p and the local strain state
are the decisive factors for this field-cycling-induced phase
transition. In summary, the wake-up effects can be regarded as
the nucleation and growth of the R3c phase with increasing number
of electric cycles.
9
Parui, Jayanta. "Studies On Pure And Modified Antiferroelectric PbZrO3 Thin Films". Thesis, 2009. https://etd.iisc.ac.in/handle/2005/663.
Texto completo da fonteResumo:
Metal oxides crystallized in perovskite structure are generally modified in two different ways. According to the general structural formula ABO3, the two ways are A-site modification and B-site modification. The primary significance of perovskite metal oxides rests on their importance in electronic devices. A particular class of perovskites, namely Lead Zirconate or modified Lead Zirconate has received a special attention because of their unique antiferroelectricity and various applications in devices. Among the other modifications, A-site modification of PbZrO3 by La is rare and not much explored. Chapter 1 describes various applications of antiferroelectric thin films along with the synthesis and characterization of pure and La modified PbZrO3, which are relevant to the work presented in this thesis.
Sol-gel processing and spin coating technique to deposit solid oxide thin films are well known for their low cost of deposition as well as for their ability to achieve better stoichiometric chemical composition. Common crack formation problem of sol-gel grown films can be prevented by ‘drying control chemical adhesive’ like polyvinylpyrrolidone (PVP). Heat treatment of sol-gel derived thin films is generally determined by TGA and DTA. Crystalline phase of deposited solid thin films is determined by XRD whereas effect of modification can be ascertained by XRD peak assignment and relative crystalline peak shifting. Sol-gel grown film thickness is measured by common cross sectional SEM whereas AFM can detail the surface morphology. Chapter 2 summarizes the deposition and characterization of pure and La modified PbZrO3 thin films.
Any nonmetal, which is insulator, is dielectric material and show dielectric dispersion in a frequency domain of low field alternative current. Among the most common feature of dielectric dispersion, Maxwell – Wagner type dispersion is well known. Similar kind of dielectric dispersion, named Maxwell – Wagner like dispersion, can be observed while the equivalent circuit consists of parallel G – C along with a series R. Universal power law of ac conductivity is the deciding factor to distinguish the nature of dispersion. Structural phase transition can be determined by dielectric response and it is widely known as dielectric phase transition. Effect of La modification on dielectric phase transition of PbZrO3 thin films depends on stabilization or destabilization of antiferroelectricity. Maximum dielectric constants of pure and modified PbZrO3 thin films depend on the crystallographic orientations of the growth. Chapter 3 presents dielectric properties of pure and La modified PbZrO3 thin films and these properties are correlated to the stabilization or destabilization of antiferroelectricity, relative integrated intensity of (202)O film orientation and trapped electron charge due to oxygen vacancies.
Charge storage property of a capacitor is determined by the polarization of the capacitor on application of electric field whereas field dependent integrated area of polarization on withdrawal of electric field determines the recoverable capacitive energy storage. Among the three kinds of capacitors like linear or paraelectric, ferroelectric and antiferroelectric capacitors, antiferroelectric capacitor is known to be best for their ability to store huge amount of recoverable energy. The recoverable energy in antiferroelectrics can be increased by increasing squareness of the P – E hysteresis loop, applicable electric field, polarization or by the all possible combinations of them. Chapter 4 describes the correlation of relative integrated intensity of (202)O [RI(202)O] with critical applied electric field of P – E saturation to provide enhanced squareness of the hysteresis loops. This chapter also describes the variation of charge and recoverable energy storage properties with respect to RI(202)O.
Like magnetocaloric effect, electrocaloric effect is capable to alter the temperature of a system by adiabatic polarization or depolarization. From the Maxwell’s relation of thermodynamics, assuming, (∂p ) = (∂s )electrocaloric effect can be calculated from temperature dependent polarization value of a paraelectric, ferroelectric or an antiferroelectric. Chapter 5 presents the electrocaloric effect of pure and La modified PbZrO3 thin films.
Summary of present study and discussion have been delineated in Chapter 6 along with the future work which can give more insight into the understanding of antiferroelectric PbZrO3 thin films with respect to Pb and Zr site modification and with respect to different electrodes.
(For formulas pl see the pdf file of the thesis)
10
Parui, Jayanta. "Studies On Pure And Modified Antiferroelectric PbZrO3 Thin Films". Thesis, 2009. http://hdl.handle.net/2005/663.
Texto completo da fonteResumo:
Metal oxides crystallized in perovskite structure are generally modified in two different ways. According to the general structural formula ABO3, the two ways are A-site modification and B-site modification. The primary significance of perovskite metal oxides rests on their importance in electronic devices. A particular class of perovskites, namely Lead Zirconate or modified Lead Zirconate has received a special attention because of their unique antiferroelectricity and various applications in devices. Among the other modifications, A-site modification of PbZrO3 by La is rare and not much explored. Chapter 1 describes various applications of antiferroelectric thin films along with the synthesis and characterization of pure and La modified PbZrO3, which are relevant to the work presented in this thesis.
Sol-gel processing and spin coating technique to deposit solid oxide thin films are well known for their low cost of deposition as well as for their ability to achieve better stoichiometric chemical composition. Common crack formation problem of sol-gel grown films can be prevented by ‘drying control chemical adhesive’ like polyvinylpyrrolidone (PVP). Heat treatment of sol-gel derived thin films is generally determined by TGA and DTA. Crystalline phase of deposited solid thin films is determined by XRD whereas effect of modification can be ascertained by XRD peak assignment and relative crystalline peak shifting. Sol-gel grown film thickness is measured by common cross sectional SEM whereas AFM can detail the surface morphology. Chapter 2 summarizes the deposition and characterization of pure and La modified PbZrO3 thin films.
Any nonmetal, which is insulator, is dielectric material and show dielectric dispersion in a frequency domain of low field alternative current. Among the most common feature of dielectric dispersion, Maxwell – Wagner type dispersion is well known. Similar kind of dielectric dispersion, named Maxwell – Wagner like dispersion, can be observed while the equivalent circuit consists of parallel G – C along with a series R. Universal power law of ac conductivity is the deciding factor to distinguish the nature of dispersion. Structural phase transition can be determined by dielectric response and it is widely known as dielectric phase transition. Effect of La modification on dielectric phase transition of PbZrO3 thin films depends on stabilization or destabilization of antiferroelectricity. Maximum dielectric constants of pure and modified PbZrO3 thin films depend on the crystallographic orientations of the growth. Chapter 3 presents dielectric properties of pure and La modified PbZrO3 thin films and these properties are correlated to the stabilization or destabilization of antiferroelectricity, relative integrated intensity of (202)O film orientation and trapped electron charge due to oxygen vacancies.
Charge storage property of a capacitor is determined by the polarization of the capacitor on application of electric field whereas field dependent integrated area of polarization on withdrawal of electric field determines the recoverable capacitive energy storage. Among the three kinds of capacitors like linear or paraelectric, ferroelectric and antiferroelectric capacitors, antiferroelectric capacitor is known to be best for their ability to store huge amount of recoverable energy. The recoverable energy in antiferroelectrics can be increased by increasing squareness of the P – E hysteresis loop, applicable electric field, polarization or by the all possible combinations of them. Chapter 4 describes the correlation of relative integrated intensity of (202)O [RI(202)O] with critical applied electric field of P – E saturation to provide enhanced squareness of the hysteresis loops. This chapter also describes the variation of charge and recoverable energy storage properties with respect to RI(202)O.
Like magnetocaloric effect, electrocaloric effect is capable to alter the temperature of a system by adiabatic polarization or depolarization. From the Maxwell’s relation of thermodynamics, assuming, (∂p ) = (∂s )electrocaloric effect can be calculated from temperature dependent polarization value of a paraelectric, ferroelectric or an antiferroelectric. Chapter 5 presents the electrocaloric effect of pure and La modified PbZrO3 thin films.
Summary of present study and discussion have been delineated in Chapter 6 along with the future work which can give more insight into the understanding of antiferroelectric PbZrO3 thin films with respect to Pb and Zr site modification and with respect to different electrodes.
(For formulas pl see the pdf file of the thesis)
Capítulos de livros sobre o assunto "Antiferroelectric materials"
1
Dabrowski, R., H. Zhang, H. Pauwels, J. L. Gayo, V. Urruchi, X. Quintana e J. M. Otón. "Characterizing Antiferroelectric Liquid Crystal Materials for Display Applications". In Functional Materials, 121–26. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607420.ch21.
Texto completo da fonte
2
Pandey, Manoj Bhushan, Roman Dabrowski e Ravindra Dhar. "Antiferroelectric Liquid Crystals: Smart Materials for Future Displays". In Advanced Energy Materials, 389–431. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118904923.ch10.
Texto completo da fonte
3
Zhou, Long Jie, Georg Rixecker, André Zimmermann e Fritz Aldinger. "Composition Dependent Fatigue in Antiferroelectric PZST Ceramics Induced by Bipolar Electric Cycling". In Materials Science Forum, 1193–96. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.1193.
Texto completo da fonte
4
Mitsui, Toshio. "Ferroelectrics and Antiferroelectrics". In Springer Handbook of Materials Data, 901–34. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69743-7_24.
Texto completo da fonte
5
Park, Min Hyuk, e Cheol Seong Hwang. "Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View". In Topics in Applied Physics, 295–310. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-024-0841-6_14.
Texto completo da fonte
6
Park, Min Hyuk, e Cheol Seong Hwang. "Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View". In Topics in Applied Physics, 343–57. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-1212-4_17.
Texto completo da fonte
7
Mukherjee, P. K. "Ferroelectric and Antiferroelectric Liquid Crystals". In Reference Module in Materials Science and Materials Engineering. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-803581-8.04033-9.
Texto completo da fonte
8
Mukherjee, Prabir K. "Ferroelectric and Antiferroelectric Liquid Crystals". In Reference Module in Materials Science and Materials Engineering. Elsevier, 2021. http://dx.doi.org/10.1016/b978-0-12-815732-9.00055-3.
Texto completo da fonte
9
Lagerwall, S. T. "Ferroelectric and Antiferroelectric Liquid Crystals". In Encyclopedia of Materials: Science and Technology, 3044–63. Elsevier, 2001. http://dx.doi.org/10.1016/b0-08-043152-6/00545-3.
Texto completo da fonte
10
Takezoe, Hideo, e Abu Z. M. S. Rahman. "Ferroelectric, Antiferroelectric, and Ferrielectric Liquid Crystals: Applications". In Reference Module in Materials Science and Materials Engineering. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-803581-8.01776-8.
Texto completo da fonteTrabalhos de conferências sobre o assunto "Antiferroelectric materials"
1
Huang, Yuan Ming. "Photosensitive banana-shaped antiferroelectric liquid crystal". In Photorefractive Effects, Materials, and Devices. Washington, D.C.: OSA, 2005. http://dx.doi.org/10.1364/pemd.2005.288.
Texto completo da fonte
2
Liu, T., e C. S. Lynch. "Phase field simulation of ferroelectric and antiferroelectric single crystals". In Smart Structures and Materials, editado por William D. Armstrong. SPIE, 2006. http://dx.doi.org/10.1117/12.658747.
Texto completo da fonte
3
Zhuang, Yong-Xiang, Jay Shieh, Miin-Jang Chen e Hsin-Chih Lin. "Modulation of Zirconia Ferroelectricity via Crystal Orientation of Pt Electrode". In ASME 2021 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/smasis2021-67936.
Texto completo da fonteResumo:
Abstract The origin of ferroelectricity and antiferroelectricity in zirconia (ZrO2) ultrathin films has become a topic of great interest in recent years. The normal ferroelectricity in ZrO2 is widely considered to originate from the high-pressure noncentrosymmetric Pca21 orthorhombic (o) phase. While the antiferroelectric-like behavior is regarded as the result of a phase transition from the centrosymmetric and paraelectric P42/nmc tetragonal (t) phase to the ferroelectric o-phase under electrical loading. This study reports an effective technique to selectively produce a ferroelectric or antiferroelectric ZrO2 ultrathin film (∼15 nm) without compositional manipulation. The technique is based on tailoring the crystal orientation of the Pt bottom electrode on which the ZrO2 ultrathin film is deposited. By correlating the results of the XRD, HRTEM, and electric field-polarization (P-E) analyses, it is found that a cubic phase (111)-oriented Pt electrode promotes the textured growth of the ferroelectric o-phase (111) planes in the ZrO2 ultrathin film; while a random-oriented Pt electrode leads to a t-phase dominated system, resulting in an antiferroelectric-like pinched P-E hysteresis. The modulation of ZrO2 ferroelectricity via the crystal orientation of the Pt bottom electrode can be achieved with a low thermal budget (< 400 °C), making it highly favorable for process integration and device scaling in a variety of nanoelectronics and nanoelectromechanical applications.
4
Luo, Xuan, Kasidit Toprasertpong, Mitsuru Takenaka e Shinichi Takagi. "ZrO<sub>2</sub>/Si Gate Stack for Antiferroelectric MFIS Capacitors and Antiferroelectric Si n-FETs". In 2022 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2022. http://dx.doi.org/10.7567/ssdm.2022.g-6-06.
Texto completo da fonte
5
Huadong Li. "Properties of ferroelectric/antiferroelectric materials in the application of EMC". In 2006 IEEE International Symposium on Electromagnetic Compatibility, 2006. EMC 2006. IEEE, 2006. http://dx.doi.org/10.1109/isemc.2006.1706284.
Texto completo da fonte
6
Dabrowski, R., K. Czuprynski, J. Gasowska, M. Tykarska, P. Kula, J. Dziaduszek, J. Oton, P. Castillo e N. Benis. "Structure and electrooptical properties of orthoconic antiferroelectric liquid crystalline materials". In Congress on Optics and Optoelectronics, editado por Tomasz R. Wolinski, Marc Warenghem e Shin-Tson Wu. SPIE, 2005. http://dx.doi.org/10.1117/12.619805.
Texto completo da fonte
7
Yoshikawa, Shoko, Numchul Kim, Thomas R. Shrout, Qi Ming Zhang, Paul Moses e Leslie E. Cross. "Field-induced lead zirconate titanate stannate antiferroelectric-to-ferroelectric phase-switching ceramics". In Smart Structures & Materials '95, editado por A. Peter Jardine. SPIE, 1995. http://dx.doi.org/10.1117/12.209807.
Texto completo da fonte
8
Yoshikawa, Shoko, Kelley McNeal, Seung Eek E. Park, Ming-Jen Pan e Leslie E. Cross. "Antiferroelectric-to-ferroelectric phase-switching lead lanthanum zirconite stannate titanate (PLZST) ceramics". In Smart Structures and Materials '97, editado por Wilbur C. Simmons, Ilhan A. Aksay e Dryver R. Huston. SPIE, 1997. http://dx.doi.org/10.1117/12.267104.
Texto completo da fonte
9
Carleton, James, e Thomas Hughes. "Anisotropic Extension of a Model for Materials with Ferroelectric to Antiferroelectric Phase Transformation." In Proposed for presentation at the 15th World Congress on Computational Mechanics held July 31-August 5, 2022 in Yokohama, Japan. US DOE, 2022. http://dx.doi.org/10.2172/2003974.
Texto completo da fonte
10
Wang, Feiling, Gene H. Haertling e Kewen K. Li. "Photo-Activated Phase Transition In Antiferroelectric Thin Films For Optical Switching And Storage*". In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/ods.1994.tud5.
Texto completo da fonteResumo:
An electric field induced antiferroelectric (AFE)-to-ferroelectric (FE) phase transition in lead zirconate titanate (PZT) thin films was shown to produce a digital birefringent change in the materials. Such field-induced AFE-to-FE phase transitions may be influenced by the interface between the PZT thin films and certain electrode materials. It has been observed that soft-ultraviolet (UV) illumination to PZT thin films effectively lift the interfacial suppression to the phase transition. Therefore, soft-UV light may be used as a writing beam to change the polarization state of the PZT thin films via the photo-activated AFE-to-FE phase transition.