Literatura científica selecionada sobre o tema "(AIGa)N quantum dots"
Crie uma referência precisa em APA, MLA, Chicago, Harvard, e outros estilos
Consulte a lista de atuais artigos, livros, teses, anais de congressos e outras fontes científicas relevantes para o tema "(AIGa)N quantum dots".
Ao lado de cada fonte na lista de referências, há um botão "Adicionar à bibliografia". Clique e geraremos automaticamente a citação bibliográfica do trabalho escolhido no estilo de citação de que você precisa: APA, MLA, Harvard, Chicago, Vancouver, etc.
Você também pode baixar o texto completo da publicação científica em formato .pdf e ler o resumo do trabalho online se estiver presente nos metadados.
Artigos de revistas sobre o assunto "(AIGa)N quantum dots"
Barettin, Daniele, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Andrey E. Nikolaev e Nikolay Cherkashin. "Electromechanically Coupled III-N Quantum Dots". Nanomaterials 13, n.º 2 (5 de janeiro de 2023): 241. http://dx.doi.org/10.3390/nano13020241.
Texto completo da fonteHuault, Thomas, Julien Brault, Franck Natali, Benjamin Damilano, Denis Lefebvre, Rabih Tauk, Mathieu Leroux e Jean Massies. "GaN/Al0.5 Ga0.5 N quantum dots and quantum dashes". physica status solidi (b) 246, n.º 4 (15 de janeiro de 2009): 842–45. http://dx.doi.org/10.1002/pssb.200880614.
Texto completo da fonteRoy, Santanu, Christopher Tuinenga, Fadzai Fungura, Pinar Dagtepe, Viktor Chikan e Jacek Jasinski. "Progress toward Producing n-Type CdSe Quantum Dots: Tin and Indium Doped CdSe Quantum Dots". Journal of Physical Chemistry C 113, n.º 30 (julho de 2009): 13008–15. http://dx.doi.org/10.1021/jp8113946.
Texto completo da fonteGu, Siyong, Chien-Te Hsieh, Yasser Ashraf Gandomi, Jianlin Li, Xing Xing Yue e Jeng-Kuei Chang. "Tailoring fluorescence emissions, quantum yields, and white light emitting from nitrogen-doped graphene and carbon nitride quantum dots". Nanoscale 11, n.º 35 (2019): 16553–61. http://dx.doi.org/10.1039/c9nr05422g.
Texto completo da fonteJeong, Kwang Seob, Zhiyou Deng, Sean Keuleyan, Heng Liu e Philippe Guyot-Sionnest. "Air-Stable n-Doped Colloidal HgS Quantum Dots". Journal of Physical Chemistry Letters 5, n.º 7 (19 de março de 2014): 1139–43. http://dx.doi.org/10.1021/jz500436x.
Texto completo da fonteMcCarthy, S. A., J. B. Wang e P. C. Abbott. "Electronic structure calculation for N-electron quantum dots". Computer Physics Communications 141, n.º 1 (novembro de 2001): 175–204. http://dx.doi.org/10.1016/s0010-4655(01)00401-5.
Texto completo da fonteNaik, M. Jaya Prakash, Sourajit Mohanta, Peetam Mandal e Mitali Saha. "N-Doped Graphene Quantum Dots Using Different Bases". International Journal of Nanoscience 18, n.º 01 (24 de janeiro de 2019): 1850017. http://dx.doi.org/10.1142/s0219581x18500175.
Texto completo da fonteShiralizadeh Dezfuli, Amin, Elmira Kohan, Sepand Tehrani Fateh, Neda Alimirzaei, Hamidreza Arzaghi e Michael R. Hamblin. "Organic dots (O-dots) for theranostic applications: preparation and surface engineering". RSC Advances 11, n.º 4 (2021): 2253–91. http://dx.doi.org/10.1039/d0ra08041a.
Texto completo da fonteMansur, Herman S., Alexandra A. P. Mansur, Elisabete Curti e Mauro V. De Almeida. "Bioconjugation of quantum-dots with chitosan and N,N,N-trimethyl chitosan". Carbohydrate Polymers 90, n.º 1 (setembro de 2012): 189–96. http://dx.doi.org/10.1016/j.carbpol.2012.05.022.
Texto completo da fonteZhang, Lin Lin, Jia Huan Wu, Chun Hui Shi e Yu Guang Lv. "Preparation of Cadmium Telluride Quantum Dots Modified by Thioglycolic Acid". Key Engineering Materials 915 (29 de março de 2022): 95–100. http://dx.doi.org/10.4028/p-m485h7.
Texto completo da fonteTeses / dissertações sobre o assunto "(AIGa)N quantum dots"
Nikitskiy, Nikita. "Propriétés d'émetteurs ultra-violets à base d'hétérostructures quantiques et de métasurfaces (Al,Ga)N". Electronic Thesis or Diss., Université Côte d'Azur, 2024. http://www.theses.fr/2024COAZ5081.
Texto completo da fonteLight-emitting diodes (LEDs) are essential in modern technology, enabling a wide range of applications from general lighting to specialized uses in medical and environmental fields. Ultraviolet (UV) LEDs, based on heterostructures of aluminum gallium nitride alloys ((Al,Ga)N) with quantum emitters, hold significant promise for applications in sterilization, water purification, and medical diagnostics due to their energy efficiency, compact form, and longer lifespan compared to conventional mercury lamps.The(Al,Ga)N-based systems have a wide and tunable direct band gap ranging from 3.4 eV to 6.2 eV, which is equivalent to emission wavelengths of 365 nm and 200 nm, respectively. This makes them particularly suitable for light emission over a broad wavelength spectrum in the UV range, while the material doping capability supports both n-type and p-type doping regions, which is necessary for LED fabrication. Despite these advantages, UV LEDs based on (Al,Ga)N currently suffer from lower quantum efficiency compared to their visible-light counterparts, particularly due to high defect densities, emission polarization effects, and overall low light extraction.This work explores these challenges in more detail and also considers the possibility of improving the radiative characteristics of (Al,Ga)N heterostructures by embedding them into a metasurface. Chapter 1 introduces the state of the art in this topic and the motivation for this work. Chapter 2 presents a comprehensive overview of the fundamental properties of (Al,Ga)N materials, including their crystallographic and optical characteristics. It also describes the Molecular Beam Epitaxy growth of (Al,Ga)N quantum dots (QDs) used in this work. In Chapter 3, we experimentally investigate the influence of the mechanical relaxation of the heterostructures and the crystalline quality on the optical properties of the QDs emitting in the UV range. Chapter 4 delves into the photonic response of (Al,Ga)N materials, offering a theoretical and experimental analysis of light interaction mechanisms and emission polarization. Finally, Chapter 5 discusses the integration of metasurfaces with (Al,Ga)N-based UV emitters for improving emission control and overall device performance. The use of metasurfaces, which can manipulate light at the subwavelength scale, is explored as a promising strategy to increase light extraction efficiency by directing and controlling emission in the UV range
Ferguson, A. "Electron transport in n-type SiGe double quantum dots". Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598980.
Texto completo da fonteYu, Kuan-Hung. "Optical Spectroscopy of GaN/Al(Ga)N Quantum Dots Grown by Molecular Beam Epitaxy". Thesis, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-19821.
Texto completo da fonteGaN quantum dots grown by molecular beam epitaxy are examined by micro-photoluminescence. The exciton and biexciton emission are identified successfully by power-dependence measurement. With two different samples, it can be deduced that the linewidth of the peaks is narrower in the thicker deposited layer of GaN. The size of the GaN quantum dots is responsible for the binding energy of biexciton (EbXX); EbXX decreases with increasing size of GaN quantum dots. Under polarization studies, polar plot shows that emission is strongly linear polarized. In particular, the orientation of polarization vector is not related to any specific crystallography orientation. The polarization splitting of fine-structure is not able to resolve due to limited resolution of the system. The emission peaks can be detected up to 80 K. The curves of transition energy with respect to temperature are S-shaped. Strain effect and screening of electric field account for blueshift of transition energy, whereas Varshni equation stands for redshifting. Both blueshifting and redshifting are compensated at temperature ranging from 4 K to 40 K.
Bruce, Jocelyn Catherine. "Use of the N,N-dialkyl-N’-benzoyl(thio)selenoureas as single source precursors for the synthesis of semiconducting quantum dots". Thesis, Stellenbosch : Stellenbosch University, 2008. http://hdl.handle.net/10019.1/1205.
Texto completo da fonteThe successful preparation and structural characterization of a number of N,N-dialkyl-N’-benzoyl(thio)selenourea ligands is described; where the intermolecular interactions are characterized by the presence of Resonance Assisted Hydrogen Bonding (RAHB), π- π interactions between neighbouring benzene residues only being evident amongst the longer alkyl chain derivatives. The first structural characterization of an asymmetrically substituted N,N-dialkyl- N’-benzoylselenourea ligand reveals an increased stability of the Z isomer in the solid state, this being reflected by the sulfur analogue. Attempts to synthesise N,N-dicyclohexyl-N’-benzoylselenourea led to the isolation and structural characterization of a novel 1,3,5-oxaselenazine salt and dicyclohexylaminobenzoate. The first structural characterization of a “bipodal” N,N-dialkyl-N’-benzoylselenourea ligand, 3,3,3’,3’-tetrabutyl-1,1’- isophthaloylbis(selenourea), reveals RAHB in the crystal lattice similar to that exhibited by the “monopodal” analogue, N,N-dibutyl-N’-benzoylselenourea. The successful complexation of the N,N-dialkyl-N’-benzoyl(thio)selenourea ligands to a number of different transition metal ions is reported allowing the preparation of several potential single source precursors. Coordination through the O and Se/S donor atoms to Pd(II) results in the formation of square planar metal complexes, with a cis conformation, several of which could be structurally characterized. In particular, the first structural elucidation of an asymmetrically substituted N,N-dialkyl-N’-benzoylselenourea metal complex, cis-bis(N-benzyl-N-methyl-N’- benzoylselenoureato)palladium(II) indicates the increased stability of the EZ isomer in the solid state. Structural elucidation of the novel (N,N-diphenyl-N’-benzoylselenoureato)cadmium(II) reveals a bimetallic complex in the solid state, where the expected 2:1 ligand : metal ratio is maintained, and the two Cd(II) centres are 5 and 6 coordinated, with O and Se donor atoms. Multinuclear Nuclear Magnetic Resonance (NMR) Spectroscopy has been employed in the thorough characterisation of the potential single source precursors, 77Se NMR spectroscopy indicating a decreased shielding of the 77Se nucleus as the “hardness” of the central metal ion increases i.e. Pd(II) > Zn(II) > Cd(II). Use of 113Cd NMR spectroscopy indicates the preferential binding of N,N-diethyl-N’- benzoylselenourea to Cd(II) over that of its sulfur analogue, and initial studies suggest a form of chelate metathesis taking place in solution. 31P NMR spectroscopy is used to gain insight into the formation of cis-bis(N,N-diethyl-N’- benzoylselenoureato)Pt(II). Thermolysis of (N,N-diethyl-N’-benzoylselenoureato)cadmium(II) and its sulfur analogue led to the successful synthesis of CdSe and CdS quantum dots respectively, where thermolysis over a range of temperatures allows a degree of size control over the resulting nanoparticles. The effect of precursor alkyl chain length on nanoparticle morphology was investigated for both the N,N-dialkyl-N’-benzoylthio- and –selenoureas. A correlation between the two for the (N,N-dialkyl-N’-benzoylselenoureato)Cd(II) complexes is described and possible growth mechanisms are discussed. Preliminary investigations into the use of other N,N-dialkyl-N’-benzoyl(thio)selenourea metal complexes as single source precursors reveal that both (N,N-diethyl-N’-benzoylselenoureato)Zn(II) and its sulfur analogue show potential as single source precursors for the formation of ZnO and ZnS nanoparticles respectively. Initial studies into the use of N,N-dialkyl-N’-benzoyl(thio)selenourea metal complexes as single source precursors for the synthesis of core-shell nanoparticles is briefly described. The Aerosol Assisted Chemical Vapour Deposition (AACVD) of several N,N-dialkyl-N’-benzoyl(thio)selenourea metal complexes is reported, where both (N,N-diethyl-N’-benzoylselenoureato)Cd(II) and its sulfur analogue allow the deposition of crystalline CdSe and CdS respectively. The AACVD of (N,N-diethyl-N’- benzoylselenoureato)Zn(II) leads to the deposition of crystalline ZnSe, ZnS being deposited by (N,N-diethyl-N’-benzoylthioureato)Zn(II). The deposition of heazelwoodite (Ni3S2) with varying morphologies results from the AACVD of cis-bis(N,N-diethyl-N’-benzoylthioureato)Ni(II). Thermal annealing of the amorphous material deposited by the AACVD of cis-bis(N,N-diethyl-N’-benzoylthioureato)Pd(II), allows the formation of highly crystalline palladium. The deposition of metallic platinum using cis-bis(N,N-diethyl-N’-benzoylthioureato)Pt(II) is described as well as the deposition of crystalline Pd17Se15 from cis-bis(N,N-diethyl-N’-benzoylselenoureato)Pd(II). This, to the best of our knowledge, is the first time that AACVD has been performed, using the N,N-dialkyl-N’- benzoyl(thio)selenourea metal complexes as single source precursors, in addition, we believe it to be the first time that palladium selenide has been deposited using the AACVD technique.
Menezes, Alan Silva de. "Estudo estrutural de nanossistemas semicondudores e semicondutores implantados por difração de raios-X de n-feixes". [s.n.], 2010. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278200.
Texto completo da fonteTese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
Made available in DSpace on 2018-08-17T08:00:52Z (GMT). No. of bitstreams: 1 Menezes_AlanSilvade_D.pdf: 23119383 bytes, checksum: ab5e971a0c297e969fddfdd4a44a73a6 (MD5) Previous issue date: 2010
Resumo: Neste trabalho, a difração múltipla (DM) de raios-X associada com as vantagens da radiação síncrotron configura-se como uma microssonda de alta resolução e é utilizada para obter relevantes contribuições ao estudo das propriedades estruturais de materiais semicondutores, apresentem-se eles como nanosistemas epitaxiais ou implantados com íons. O estudo e detecção de reflexões híbridas (interação camada epitaxial/substrato) coerentes (CHR) negativas nas varreduras Renninger (RS) do substrato é uma das contribuições desta tese. O mapeamento ?:f da condição de difração da reflexão secundária (113)(111) mostra que a CHR negativa que aparece é, na realidade, a interferência destrutiva entre a reflexão secundária da rede da camada e a reflexão primária do substrato. Ressalta-se aqui importância da medida detalhada da condição de difração de reflexões secundárias adequadas da DM. O uso do caso especial da DM denominado difração Bragg-superfície (BSD), cuja reflexão secundária se propaga paralelamente à superfície dos monocristais ou interfaces nas heteroestruturas, quando envolve reflexões secundárias que são sensíveis à simetria da rede cristalina, constitui outra contribuição da tese. O pico na RS para o substrato (GaAs), que representa o caso de quatro-feixes (000)(004)(022)(022) e que se separa em dois picos na RS da camada GaInP por distorção tetragonal foi utilizado como uma nova ferramenta no estudo de deformações tetragonais, mesmo para camadas epitaxiais finas. Além disso, a presença de distorções ortorrômbicas ou até mesmo monoclínicas, pode ser investigada pela medida dos dois pares de picos secundários (022)(022) e (202)(202), também presentes na mesma RS da camada ternária. Outras contribuições desta tese estão na aplicação da DM no estudo de amostras de SiO2/Si(001) implantadas com íons Fe+, que passaram pelo processo de cristalização epitaxial induzida por feixe de íons (IBIEC) e, finalmente, por tratamento térmico. Mapeamentos ?:f do pico BSD (000)(002)(111) forneceram parâmetros de rede e tensões nas direções perpendiculares e paralelas com relação à superfície, para as regiões tensionadas provocadas por formação das nanopartículas da fase ?-FeSi2 produzidas por IBIEC. Para outro conjunto de amostras semelhantes exceto pela ausência do óxido a interessante formação de nanopartículas da fase ?-FeSi2 sob a forma de placas orientadas na amostra IBIEC, que foram observadas por microscopia e confirmadas por curvas de rocking (002) na condição de DM para os picos BSD (111) e (111) e mapeamentos ?:f, provocou tensões anisotrópicas no plano da superfície da amostra IBIEC. Formas esféricas das nanopartículas também detectadas por microscopia introduzem tensões isotrópicas e a caracterização estrutural das amostras foi realizada da mesma maneira mencionada acima. Medidas dos mapeamentos do espaço recíproco (RSM) com reflexões simétricas e assimétricas foram importante para confirmar os resultados obtidos por MD das amostras implantadas, por permitir observar a variação de composição lateral e periódica existente na camada de GaInP, assim como, por confirmar o efeito da altura dos pontos quânticos de InP sobre a camada ternária, no nível de tensão provocado por eles na camada de recobrimento desses pontos, ou seja, quanto maior a altura maior o nível de tensão na camada
Abstract: In this paper, X-ray multiple diffraction (MD) associated with the advantages of synchrotron radiation appears as a high-resolution microprobe and it is used to obtain relevant contributions to the study of structural properties of semiconductor materials, as they present themselves nanosystems epitaxial or implanted with ions. The study and detection of negative hybrid reflections (interaction epitaxial layer/substrate) coherent (CHR) in substrate Renninger scans (RS) is one of the contributions of this thesis. The ?:f mapping, i.e., the scanning of the (113)(111) secondary reflection diffraction condition shows that the CHR negative that appears is, in fact, the destructive interference between the layer secondary reflection and the substrate primary reflection. It is emphasized here the importance of a detailed measurement of the diffraction condition of adequate MD secondary reflections. The use of the MD special case named Bragg-Surface Diffraction (BSD), in which the secondary reflection propagates parallel to the single crystal surface or interfaces in heterostructures, when involves secondary reflections that are sensitive to the crystalline lattice symmetry, is another relevant contribution of this thesis. The substrate (GaAs) RS peak, which stands for the (000)(004)(022)(022) four-beam case that splits into two three-beam peaks GaInP layer RS by tetragonal distortion was used as a novel tool in the study of tetragonal distortions, even for thin epitaxial layers. Moreover, the presence of orthorhombic distortion or even monoclinic one, can be investigated by measuring the two pairs of secondary peaks (022)(022)and (202)(202) also present in the same ternary layer RS. Other thesis contributions are in the application of DM to the study of SiO2/Si(001) crystals implanted with Fe+, which were submitted to Ion Beam Induced Epitaxial Crystallization process (IBIEC) and then, annealed. ?:f mappings of the (000)(002)(111) BSD peak gave rise to perpendicular and in-plane lattice parameters and strains for the stressed regions provoked by the ?-FeSi2 nanoparticles formation provided by IBIEC. For another set of similar samples except for the absence of the oxide, the interesting formation of oriented plate-like ?-FeSi2 nanoparticles, that were observed by TEM and confirmed by (002) rocking curves obtained at MD condition for the BSD (111) and (1 peaks and the ?:f mappings that provided anisotropic in-plane strains in IBIEC sample. Nanoparticles spherical-like also detected by TEM induce isotropic strains and the samples structural characterization was obtained using the same above mentioned manner. Measurements of the reciprocal space mapping (RSM) using symmetric and asymmetric reflections were important to confirm the implanted crystal results obtained by MD by allowing to observe the periodic and lateral composition variation in the GaInP layer as well as, to confirm the effect of the height of InP quantum dots grown on the ternary layer in the strain degree they cause in the ternary cap layer, it means, the greater the height the greater the level of strain in the cap layer
Doutorado
Física da Matéria Condensada
Doutor em Ciências
Jezequel, Julie. "Impact of psychotomimetic molecules on glutamatergic N-Methyl-D-Aspartate receptors surface trafficking". Thesis, Bordeaux, 2016. http://www.theses.fr/2016BORD0232/document.
Texto completo da fonteGlutamatergic N-Methyl-D-Aspartate receptors (NMDAR) play a key role in many physiological processes, and their implication in the pathophysiology of several neuropsychiatric disorders is now well established. Multiple lines of evidence converge towards a dysregulation of the NMDAR in psychotic disorders such as schizophrenia (SCZ). However, the molecular and cellular deficits underlying NMDAR dysfunction remain misunderstood. By tightly controlling NMDAR synaptic localization, surface trafficking represents a powerful regulator of synaptic transmission. Could an alteration of NMDAR surface trafficking underlie NMDAR dysfunction and contribute to the emergence of psychotic disorders? To tackle this question, my PhD project aimed at investigating the impact of different psychotomimetic molecules on NMDAR surface trafficking. In the first part of my project, I explored the impact of NMDAR autoantibodies (NMDAR-Ab) from SCZ and healthy subjects. My results revealed that NMDAR-Ab from SCZ patients rapidly disturb NMDAR synaptic trafficking and distribution, through a loss of NMDAR-EphrinB2 receptor interaction, eventually preventing the induction of synaptic plasticity. In the second part of my PhD project, I showed that psychotomimetic NMDAR antagonists also alter NMDAR synaptic mobility and localization. Downregulation of PSD proteins expression prevented NMDAR antagonists-induced deficits, suggesting that such alterations ensue from modifications of NMDAR intracellular interactions. Taken together, these results demonstrate that psychotomimetic molecules profoundly impact NMDAR surface trafficking, supporting a pathogenic role of this unsuspected process in the emergence of psychotic symptoms
Pasquali, Valerio. "Fabrication and measurement of strain-free GaAs/AlAs quantum dot devices". Thesis, Paris 6, 2017. http://www.theses.fr/2017PA066631.
Texto completo da fonteIn this thesis the formation of quantum dots (QD) via in-situ droplet nanohole etching, the fabrication and characterization of devices based on these nanostructures is described. The thesis consists of seven chapters. In the first chapter an introduction is given to present the topic to the reader. In the second chapter the experimental methods are presented. In the third chapter, the fabrication method is described and the experimental results obtained in this project are discussed. It will be shown the use of in-situ droplet etching to locally modify the thickness of a modulation doped quantum well, to create QDs embedded in a quantum well(QW) where a two dimensional electorn gas (2DEG) is confined by modulation doping and the embedding of these nanostructures in a n-i-Schottky diode. The effect of these strain-free dots, and the related nanoscale thickness fluctuations of the quantum well, on the 2DEG mobility are discussed in the fourth and in particular in the fifth chapter. In the sixth chapter, the fabrication of a lateral p-n junction based on the QW sample with embedded QD is presented. Following describing the fabrication stages and analysing the influence of each stage on the device, the optical properties of the junction will be discussed. In particular, it will be shown the electroluminescence of a single dot located at lateral the p-n junction. Finally, in the last chapter the conclusion of this work and the future projects are presented
Pasquali, Valerio. "Fabrication and measurement of strain-free GaAs/AlAs quantum dot devices". Electronic Thesis or Diss., Paris 6, 2017. http://www.theses.fr/2017PA066631.
Texto completo da fonteIn this thesis the formation of quantum dots (QD) via in-situ droplet nanohole etching, the fabrication and characterization of devices based on these nanostructures is described. The thesis consists of seven chapters. In the first chapter an introduction is given to present the topic to the reader. In the second chapter the experimental methods are presented. In the third chapter, the fabrication method is described and the experimental results obtained in this project are discussed. It will be shown the use of in-situ droplet etching to locally modify the thickness of a modulation doped quantum well, to create QDs embedded in a quantum well(QW) where a two dimensional electorn gas (2DEG) is confined by modulation doping and the embedding of these nanostructures in a n-i-Schottky diode. The effect of these strain-free dots, and the related nanoscale thickness fluctuations of the quantum well, on the 2DEG mobility are discussed in the fourth and in particular in the fifth chapter. In the sixth chapter, the fabrication of a lateral p-n junction based on the QW sample with embedded QD is presented. Following describing the fabrication stages and analysing the influence of each stage on the device, the optical properties of the junction will be discussed. In particular, it will be shown the electroluminescence of a single dot located at lateral the p-n junction. Finally, in the last chapter the conclusion of this work and the future projects are presented
Tao, Zhi. "Photodétection dans une large gamme de longueur d’onde : phototransistor CdSe QDs/RGO sur des nanofils de ZnO dans la gamme UV-Vis, PbS QDs avec un transistor organique C60 de type N imprimé dans la gamme proche IR". Thesis, Rennes 1, 2019. http://www.theses.fr/2019REN1S087.
Texto completo da fonteDetection of light in large wavelength range, from the UV to NIR, is got with high sensitivity by using the amplification of a field effect transistor and the ability of light detection in large range by CdSe and PbS quantum dots with different diameters. In the first part, a FET with ZnO nanowires active layer is fabricated. The light detection in UV-Vis range is insured thanks to CdSe QDs/RGO (Reduced Graphene Oxide) fragments decorating the surface of the ZnO nanowires RGO insures good transfer of photo-electrons induced by the light into the CdSe QDs towards ZnO. The responsivity, higher than 104 A/W at 350 nm, has been improved by 100 in 200-500 nm range by using RGO. In the second part, IR light detection has been insured by using PbS QDs embedded in N-type Organic FET using C60 film as active layer. Silver electrodes of this transistor and its SU8 photoresist gate insulator have been printed. QDs have been deposited in solution at the interface between the semiconducting layer and the gate insulator. This phototransistor has been used in an inverter. The output voltage of the inverter change by 2V under lighting with 1050 nm wavelength and 250 µW/cm2 power
Pruvost, Née Dequidt Caroline. "Etude de la dynamique des adhésions neuronales N-cadhérine et L1 dans la croissance axonale et la synaptogenèse". Phd thesis, Université Victor Segalen - Bordeaux II, 2007. http://tel.archives-ouvertes.fr/tel-00164823.
Texto completo da fonteCapítulos de livros sobre o assunto "(AIGa)N quantum dots"
Veljković, Dj, M. Tadić e F. M. Peeters. "Intersublevel Absorption in Stacked n-Type Doped Self-Assembled Quantum Dots". In Materials Science Forum, 37–42. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-971-7.37.
Texto completo da fonteLiu, Quanlin, e Ting Wang. "Tuning Luminescence by Varying the O/N or Al/Si Ratio in Some Eu-Doped Nitride Phosphors". In Phosphors, Up Conversion Nano Particles, Quantum Dots and Their Applications, 343–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-52771-9_11.
Texto completo da fonteGrushevskaya, H. V., G. G. Krylov, S. P. Kruchinin e B. Vlahovic. "Graphene Quantum Dots, Graphene Non-circular n–p–n-Junctions: Quasi-relativistic Pseudo Wave and Potentials". In NATO Science for Peace and Security Series A: Chemistry and Biology, 47–58. Dordrecht: Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-94-024-1304-5_4.
Texto completo da fonteHiu, Jia Shen, Sue Jiun Phang, Jiale Lee, Voon-Loong Wong e Lling-Lling Tan. "B-doped Carbon Quantum Dots Anchored n/n-Junctioned Graphitic Carbon Nitride (g-C3N4) for CO2 Photoreduction". In Environmental Science and Engineering, 151–57. Singapore: Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-0372-2_14.
Texto completo da fonteViscusi, Gianluca, Stefania Mottola, Hebat-Allah S. Tohamy, Giuliana Gorrasi e Iolanda De Marco. "Design of Cellulose Acetate Electrospun Membranes Loaded with N-doped Carbon Quantum Dots for Water Remediation". In Lecture Notes in Civil Engineering, 133–37. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-63357-7_22.
Texto completo da fonteDagher, Sawsan, Yousef Haik, Ahmad Ayesh e Nacer Tit. "Heterojunction Solar Cell Based on p-type PbS Quantum Dots and Two n-type Nanocrystals CdS and ZnO". In ICREGA’14 - Renewable Energy: Generation and Applications, 535–45. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05708-8_43.
Texto completo da fonteJohn, Bony K., Neenamol John e Beena Mathew. "Microwave Assisted Synthesis of N,S-Doped Carbon Quantum Dots as a Fluorescent Sensor for Silver(I) Ions". In Recent Advances in Nanomaterials, 177–83. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4878-9_24.
Texto completo da fontePomorski, Krzysztof. "Analytical Solutions for N-Electron Interacting System Confined in Graph of Coupled Electrostatic Semiconductor and Superconducting Quantum Dots in Tight-Binding Model with Focus on Quantum Information Processing". In Springer Proceedings in Physics, 67–165. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-18096-5_7.
Texto completo da fonteGhosal, A., C. J. Unirigar, H. Jiang, D. Ullmo e H. U. Baranger. "Interaction effects in the mesoscopic regime: A quantum :rvionte Carlo study of irregular quantum dots". In Quantum Monte Carlo, 154. Oxford University PressNew York, NY, 2007. http://dx.doi.org/10.1093/oso/9780195310108.003.00158.
Texto completo da fontePederiva, F., C. J. Umrigar e E. Lipparini. "Diffusion Monte Carlo study of circular quantum dots". In Quantum Monte Carlo, 128. Oxford University PressNew York, NY, 2007. http://dx.doi.org/10.1093/oso/9780195310108.003.00131.
Texto completo da fonteTrabalhos de conferências sobre o assunto "(AIGa)N quantum dots"
Mishra, Pawan, Lydia Jarvis, Chris Hodges, Sara-Jayne Gillgrass, Richard Forrest, Dagmar Butkovicova, Craig P. Allford et al. "Achieving InAs Quantum Dot Laser Operation at and Beyond 150 °C". In CLEO: Applications and Technology, ATh3O.2. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.ath3o.2.
Texto completo da fonteNOMURA, S., e T. IITAKA. "ORDER-N ELECTRONIC STRUCTURE CALCULATION OF n-TYPE GaAs QUANTUM DOTS". In Proceedings of the International Symposium. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812814623_0031.
Texto completo da fonteNomura, S., e T. Iitaka. "Order-N electronic structure calculation of n-type GaAs quantum dots". In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730175.
Texto completo da fonteArabzadeh Nosratabad, Neda, Zhicheng Jin, Liang Du e Hedi Mattoussi. "N-Heterocyclic carbene-stabilized gold nanoparticles and luminescent quantum dots". In Colloidal Nanoparticles for Biomedical Applications XVII, editado por Marek Osiński e Antonios G. Kanaras. SPIE, 2022. http://dx.doi.org/10.1117/12.2610485.
Texto completo da fonteBai-sheng, CHEN. "Quantum Dots Tracking with N-Memory Cluster Indexed SMC-PHD filter". In 2020 International Conference on Computer Engineering and Application (ICCEA). IEEE, 2020. http://dx.doi.org/10.1109/iccea50009.2020.00091.
Texto completo da fonteZhai, Liang, Giang N. Nguyen, Matthias C. Löbl, Clemens Spinnler, Alisa Javadi, Julian Ritzmann, Andreas D. Wieck, Arne Ludwig e Richard J. Warburton. "Low-noise GaAs quantum dots in a p-i-n diode". In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_qels.2021.fw4i.1.
Texto completo da fonteDvurechenskii, A. V., Ivan A. Ryazantsev, Anatolii P. Kovchavsev, Georgii L. Kuryshev, Alexander I. Nikivorov e Oleg P. Pchelyakov. "Photoconductivity gain by Si(Ge) p-n junction containing quantum dots". In SPIE Proceedings, editado por Anatoly M. Filachev e Alexander I. Dirochka. SPIE, 2003. http://dx.doi.org/10.1117/12.517308.
Texto completo da fonteGeiregat, Pieter, Ashley Stingel, Jari Leemans e Poul Petersen. "Broadband and Ultrafast Infrared Spectroscopy of n-doped HgSe Quantum Dots". In nanoGe Spring Meeting 2022. València: Fundació Scito, 2022. http://dx.doi.org/10.29363/nanoge.nsm.2022.063.
Texto completo da fonteLin, Yi-Hsien, e Jean-Fu Kiang. "Efficiency improvement of p-i-n solar cell by embedding quantum-dots". In 2014 USNC-URSI Radio Science Meeting (Joint with AP-S Symposium). IEEE, 2014. http://dx.doi.org/10.1109/usnc-ursi.2014.6955517.
Texto completo da fonteSanchez-Mondragon, Jose Javier, Adalberto Alejo-Molina, Sergio Sanchez-Sanchez e Miguel Torres-Cisneros. "Comparison of the Dicke model and the Hamiltonian for n quantum dots". In Integrated Optoelectronic Devices 2005, editado por Diana L. Huffaker e Pallab K. Bhattacharya. SPIE, 2005. http://dx.doi.org/10.1117/12.591222.
Texto completo da fonte