Artigos de revistas: "40~nm"

1

Durkan, C., e I. V. Shvets. "40 nm resolution in reflection-mode SNOM with λ = 685 nm". Ultramicroscopy 61, n.º 1-4 (dezembro de 1995): 227–31. http://dx.doi.org/10.1016/0304-3991(95)00114-x.

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2

Pezeshki, B., M. Zelinski, H. Zhao e V. Agrawal. "40-mW 650-nm distributed feedback lasers". IEEE Photonics Technology Letters 10, n.º 1 (janeiro de 1998): 36–38. http://dx.doi.org/10.1109/68.651093.

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3

Ono, M., M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro e H. Iwai. "A 40 nm gate length n-MOSFET". IEEE Transactions on Electron Devices 42, n.º 10 (1995): 1822–30. http://dx.doi.org/10.1109/16.464413.

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4

Park, Chaeeun, e Munkyo Seo. "A 140 GHz Low-Noise Amplifier in 40 nm CMOS". Journal of Korean Institute of Electromagnetic Engineering and Science 33, n.º 4 (abril de 2022): 312–17. http://dx.doi.org/10.5515/kjkiees.2022.33.4.312.

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5

Wandt, D., M. Laschek, K. Przyklenk, A. Tünnermann e H. Welling. "External cavity laser diode with 40 nm continuous tuning range around 825 nm". Optics Communications 130, n.º 1-3 (setembro de 1996): 81–84. http://dx.doi.org/10.1016/0030-4018(96)00171-x.

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6

Zaghib, Karim, Alain Mauger, Monika Kopec, Francois Gendron e C. M. Julien. "Intrinsic Properties of 40 nm-sized LiFePO4 Particles". ECS Transactions 16, n.º 42 (18 de dezembro de 2019): 31–41. http://dx.doi.org/10.1149/1.3112726.

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7

Appenzeller, J., R. Martel, Ph Avouris, J. Knoch, J. Scholvin, J. A. del Alamo, P. Rice e P. Solomon. "Sub-40 nm SOI V-groove n-MOSFETs". IEEE Electron Device Letters 23, n.º 2 (fevereiro de 2002): 100–102. http://dx.doi.org/10.1109/55.981319.

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8

Homulle, Harald, Fabio Sebastiano e Edoardo Charbon. "Deep-Cryogenic Voltage References in 40-nm CMOS". IEEE Solid-State Circuits Letters 1, n.º 5 (maio de 2018): 110–13. http://dx.doi.org/10.1109/lssc.2018.2875821.

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9

Hofmann, W., M. Müller, P. Wolf, A. Mutig, T. Gründl, G. Böhm, D. Bimberg e M. C. Amann. "40 Gbit/s modulation of 1550 nm VCSEL". Electronics Letters 47, n.º 4 (2011): 270. http://dx.doi.org/10.1049/el.2010.3631.

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10

Takeuchi, Issei, Yosuke Shimamura, Yuki Kakami, Tsunenori Kameda, Keitaro Hattori, Seiji Miura, Hiroyuki Shirai et al. "Transdermal delivery of 40-nm silk fibroin nanoparticles". Colloids and Surfaces B: Biointerfaces 175 (março de 2019): 564–68. http://dx.doi.org/10.1016/j.colsurfb.2018.12.012.

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11

Durán, Vicente, Peter A. Andrekson e Víctor Torres-Company. "Electro-optic dual-comb interferometry over 40 nm bandwidth". Optics Letters 41, n.º 18 (7 de setembro de 2016): 4190. http://dx.doi.org/10.1364/ol.41.004190.

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12

Gutierrez, Eric, Carlos Perez, Luis Hernandez, Fernando Cardes, Violeta Petrescu, Sergio Walter e Ulrich Gaier. "A Pulse Frequency Modulation VCO-ADC in 40 nm". IEEE Transactions on Circuits and Systems II: Express Briefs 66, n.º 1 (janeiro de 2019): 51–55. http://dx.doi.org/10.1109/tcsii.2018.2837757.

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13

Liu, Yibo, Luhong Mao e Baoyong Chi. "185–220 GHz wideband amplifier in 40 nm CMOS". Electronics Letters 54, n.º 13 (junho de 2018): 802–4. http://dx.doi.org/10.1049/el.2018.1135.

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14

Zhao, Dixian, Shailesh Kulkarni e Patrick Reynaert. "A 60-GHz Outphasing Transmitter in 40-nm CMOS". IEEE Journal of Solid-State Circuits 47, n.º 12 (dezembro de 2012): 3172–83. http://dx.doi.org/10.1109/jssc.2012.2216692.

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15

Atef, Mohamed, Andreas Polzer e Horst Zimmermann. "Avalanche Double Photodiode in 40-nm Standard CMOS Technology". IEEE Journal of Quantum Electronics 49, n.º 3 (março de 2013): 350–56. http://dx.doi.org/10.1109/jqe.2013.2246546.

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16

Cong, Jia, Dong Yan, Jiling Tang, Weilian Guo e Xurui Mao. "Integrated Color Photodetectors in 40-nm Standard CMOS Technology". IEEE Photonics Technology Letters 31, n.º 24 (15 de dezembro de 2019): 1979–82. http://dx.doi.org/10.1109/lpt.2019.2952204.

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17

Suteewong, Teeraporn, Kai Ma, Jennifer E. Drews, Ulrike Werner-Zwanziger, Josef Zwanziger, Ulrich Wiesner e Michelle S. Bradbury. "Highly fluorescent sub 40-nm aminated mesoporous silica nanoparticles". Journal of Sol-Gel Science and Technology 74, n.º 1 (21 de novembro de 2014): 32–38. http://dx.doi.org/10.1007/s10971-014-3567-2.

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18

Kakami, Yuki, Issei Takeuchi e Kimiko Makino. "Percutaneous immunization with 40-nm antigen-encapsulated elastic liposomes". Colloids and Surfaces A: Physicochemical and Engineering Aspects 566 (abril de 2019): 128–33. http://dx.doi.org/10.1016/j.colsurfa.2019.01.023.

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19

Mansur, Dan. "A New 40-nm FPGA and ASIC Common Platform". IEEE Micro 29, n.º 2 (março de 2009): 46–53. http://dx.doi.org/10.1109/mm.2009.22.

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20

Ochiai, Y., S. Manako, S. Samukawa, K. Takeuchi e T. Yamamoto. "Accurate nano-EB lithography for 40-nm gate MOSFETs". Microelectronic Engineering 30, n.º 1-4 (janeiro de 1996): 415–18. http://dx.doi.org/10.1016/0167-9317(95)00276-6.

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21

Martinez-Lopez, A. G., A. Cerdeira, J. C. Tinoco, J. Alvarado, W. Y. Padron, C. Mendoza e J. P. Raskin. "RF modeling of 40-nm SOI triple-gate FinFET". International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 28, n.º 4 (16 de outubro de 2014): 465–78. http://dx.doi.org/10.1002/jnm.2028.

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22

Coelho, M. F., M. A. Rivas, E. M. Nogueira e T. P. Iglesias. "Permittivity of (40 nm and 80 nm) alumina nanofluids in ethylene glycol at different temperatures". Journal of Chemical Thermodynamics 158 (julho de 2021): 106423. http://dx.doi.org/10.1016/j.jct.2021.106423.

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23

Usami, Yoshihisa, Tetsuya Watanabe, Yoshinori Kanazawa, Kazuaki Taga, Hiroshi Kawai e Kimio Ichikawa. "405 nm Laser Thermal Lithography of 40 nm Pattern Using Super Resolution Organic Resist Material". Applied Physics Express 2, n.º 12 (27 de novembro de 2009): 126502. http://dx.doi.org/10.1143/apex.2.126502.

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24

Goldstein, John C., Brian D. McVey e C. James Elliott. "Conceptual designs of a 50 nm FEL oscillator and a 20–40 nm SASE amplifier". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 272, n.º 1-2 (outubro de 1988): 177–82. http://dx.doi.org/10.1016/0168-9002(88)90219-7.

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25

Tang, Ming, Xiaolong Tian, Xiaona Lu, Songnian Fu, Perry Ping Shum, Zhenrong Zhang, Ming Liu, Yuan Cheng e Jian Liu. "Single-frequency 1060 nm semiconductor-optical-amplifier-based fiber laser with 40 nm tuning range". Optics Letters 34, n.º 14 (13 de julho de 2009): 2204. http://dx.doi.org/10.1364/ol.34.002204.

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26

Kim, Jaegwan, Changjung Lee e Munkyo Seo. "A 130-GHz Low-Area Power Amplifier in 40-nm CMOS". Journal of Korean Institute of Electromagnetic Engineering and Science 34, n.º 4 (abril de 2023): 310–16. http://dx.doi.org/10.5515/kjkiees.2022.34.4.310.

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27

Kim, Jaegwan, Changjung Lee e Munkyo Seo. "A 130-GHz Low-Area Power Amplifier in 40-nm CMOS". Journal of Korean Institute of Electromagnetic Engineering and Science 34, n.º 4 (abril de 2023): 310–16. http://dx.doi.org/10.5515/kjkiees.2023.34.4.310.

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28

Shuangyi Yan, 延双毅, 张建国 Jianguo Zhang e 赵卫 Wei Zhao. "40-GHz wavelength tunable mode-locked SOA-based fiber laser with 40-nm tuning range". Chinese Optics Letters 6, n.º 9 (2008): 676–78. http://dx.doi.org/10.3788/col20080609.0676.

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29

Tanaka, Hiroaki, Yasuyuki Miyamoto, Toshihiko Otake, Jiroo Yoshinaga e Kazuhito Furuya. "Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs". Japanese Journal of Applied Physics 35, Part 2, No. 8A (1 de agosto de 1996): L964—L967. http://dx.doi.org/10.1143/jjap.35.l964.

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30

Zhao Junfa, 赵军发, 杨秀峰 Yang Xiufeng, 刘卓琳 Liu Zhuolin, 童峥嵘 Tong Zhengrong, 刘艳格 Liu Yange e 赵启大 Zhao Qida. "Multiwavelength Brillouin/Erbium Fiber Source with 40 nm Tuning Range". Chinese Journal of Lasers 37, n.º 10 (2010): 2482–86. http://dx.doi.org/10.3788/cjl20103710.2482.

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31

Melul, Franck, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Pierre Laine, Frederique Trenteseaux, Marc Mantelli et al. "Morphology and reliability aspects of 40 nm eSTM™ architecture". Microelectronics Reliability 126 (novembro de 2021): 114266. http://dx.doi.org/10.1016/j.microrel.2021.114266.

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32

Sialm, G., C. Kromer, T. Morf, F. Ellinger e H. Jäckel. "40 Gbit∕s limiting output buffer in 80 nm CMOS". Electronics Letters 41, n.º 19 (2005): 1051. http://dx.doi.org/10.1049/el:20052172.

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33

Lee, K. J., R. LaComb, B. Britton, M. Shokooh-Saremi, H. Silva, E. Donkor, Y. Ding e R. Magnusson. "Silicon-Layer Guided-Mode Resonance Polarizer With 40-nm Bandwidth". IEEE Photonics Technology Letters 20, n.º 22 (novembro de 2008): 1857–59. http://dx.doi.org/10.1109/lpt.2008.2004777.

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34

Shin, Jinuk Luke, Dawei Huang, Bruce Petrick, Changku Hwang, Kenway W. Tam, Alan Smith, Ha Pham et al. "A 40 nm 16-Core 128-Thread SPARC SoC Processor". IEEE Journal of Solid-State Circuits 46, n.º 1 (janeiro de 2011): 131–44. http://dx.doi.org/10.1109/jssc.2010.2080491.

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35

Ko, Chun-Lin, Chun-Hsing Li, Chien-Nan Kuo, Ming-Ching Kuo e Da-Chiang Chang. "A 210-GHz Amplifier in 40-nm Digital CMOS Technology". IEEE Transactions on Microwave Theory and Techniques 61, n.º 6 (junho de 2013): 2438–46. http://dx.doi.org/10.1109/tmtt.2013.2260767.

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36

Aiello, Orazio, Paolo Crovetti e Massimo Alioto. "Standard Cell-Based Ultra-Compact DACs in 40-nm CMOS". IEEE Access 7 (2019): 126479–88. http://dx.doi.org/10.1109/access.2019.2938737.

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37

Martín-González, M., A. L. Prieto, R. Gronsky, T. Sands e A. M. Stacy. "High-Density 40 nm Diameter Sb-Rich Bi2xSbxTe3 Nanowire Arrays". Advanced Materials 15, n.º 12 (17 de junho de 2003): 1003–6. http://dx.doi.org/10.1002/adma.200304781.

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38

Zhang, Sheng, Ke Wei, Xiao-Hua Ma, Bin Hou, Guo-Guo Liu, Yi-chuan Zhang, Xin-Hua Wang et al. "Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer". Applied Physics Letters 114, n.º 1 (7 de janeiro de 2019): 013503. http://dx.doi.org/10.1063/1.5077050.

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39

Wang, Weihuai, Hao Jin, Shurong Dong, Lei Zhong e Yan Han. "Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process". Solid-State Electronics 116 (fevereiro de 2016): 80–87. http://dx.doi.org/10.1016/j.sse.2015.11.033.

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40

Yoneda, Shinichi, Satoru Ito, Yukio Hayakawa, Zhiqiang Wei, Shunsaku Muraoka, Ryutaro Yasuhara, Koichi Kawashima, Atsushi Himeno e Takumi Mikawa. "Newly developed process integration technologies for highly reliable 40 nm ReRAM". Japanese Journal of Applied Physics 58, SB (22 de fevereiro de 2019): SBBB06. http://dx.doi.org/10.7567/1347-4065/aafd8d.

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41

Zhou Hongjun, 周洪军, 王冠军 Wang Guanjun, 郑津津 Zheng Jinjin, 霍同林 Hou Tonglin e 邱克强 Qiu Keqiang. "Suppression of HigherOrder Harmonics by Different Filter in 5~40 nm". Acta Optica Sinica 30, n.º 9 (2010): 2753–56. http://dx.doi.org/10.3788/aos20103009.2753.

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42

Yoo, Seong Ho, Benjamin Y. H. Liu, James Sun, Natraj Narayanswami e Gregory P. Thomes. "Particle Removal Efficiency Evaluation at 40 nm Using Haze Particle Standard". Solid State Phenomena 76-77 (janeiro de 2001): 259–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.259.

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43

Kmon, P., R. Szczygieł, R. Kłeczek, D. Górni, G. Węgrzyn, A. Niedzielska, K. Sitko e P. Drwal. "Spectrum1k — integrated circuit for medical imaging designed in CMOS 40 nm". Journal of Instrumentation 17, n.º 03 (1 de março de 2022): C03023. http://dx.doi.org/10.1088/1748-0221/17/03/c03023.

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Resumo:

Abstract We present a multichannel integrated circuit of pixel architecture designed in CMOS 40 nm technology. The chip is composed of 40 × 24 pixels of 75 µm pitch working in the single photon counting mode, each built of front-end amplifier, peak and hold detector, 6-bit analog to digital converter, and memory composed of 64 × 12-bit counters. Thanks to the proposed functionality it is possible to store in each pixel separately information of incoming particles energy spectrum. The chip is dedicated to operating with both electrons and holes of 2.2 ke−–35 ke− energy range. The IC occupies an area of 2 × 4.5 mm2, is already back from fabrication, and is under preliminary measurements.

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44

Xu, Lei-jun, Zhi-jian Xie, Xue Bai, Qin Li, Bai-kang Wang e Peng-cheng Yin. "Design of THz Monolithic Source and Detector in 40-nm CMOS". Journal of Infrared, Millimeter, and Terahertz Waves 42, n.º 9-10 (setembro de 2021): 1040–60. http://dx.doi.org/10.1007/s10762-021-00787-6.

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45

Moons, Bert, e Marian Verhelst. "An Energy-Efficient Precision-Scalable ConvNet Processor in 40-nm CMOS". IEEE Journal of Solid-State Circuits 52, n.º 4 (abril de 2017): 903–14. http://dx.doi.org/10.1109/jssc.2016.2636225.

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46

Wang, X., F. Gao, K. Huang, Z. s. Zhang, Y. Shi e Y. Xu. "Spectral Sensitivity Analysis of OCD Tool for Sub 40 Nm Process". ECS Transactions 60, n.º 1 (27 de fevereiro de 2014): 887–92. http://dx.doi.org/10.1149/06001.0887ecst.

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47

Kalyuzhnyy, N. A., S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskiy, D. V. Rybalchenko e M. Z. Shvarts. "InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency". Electronics Letters 53, n.º 3 (fevereiro de 2017): 173–75. http://dx.doi.org/10.1049/el.2016.4308.

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48

Tan, Chee Hing, Shiyu Xie e Jingjing Xie. "Low Noise Avalanche Photodiodes Incorporating a 40 nm AlAsSb Avalanche Region". IEEE Journal of Quantum Electronics 48, n.º 1 (janeiro de 2012): 36–41. http://dx.doi.org/10.1109/jqe.2011.2176105.

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49

Liu, H. D., Y. P. Zhao, G. Ramanath, S. P. Murarka e G. C. Wang. "Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films". Thin Solid Films 384, n.º 1 (março de 2001): 151–56. http://dx.doi.org/10.1016/s0040-6090(00)01818-6.

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50

Mauricio, Joan, Francesc Moll e Sergio Gomez. "Measurements of Process Variability in 40-nm Regular and Nonregular Layouts". IEEE Transactions on Electron Devices 61, n.º 2 (fevereiro de 2014): 365–71. http://dx.doi.org/10.1109/ted.2013.2294742.

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Artigos de revistas sobre o tema "40~nm"

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