Gotowe bibliografie tematyczne / ZnO based Schottky Thin film devices

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Gotowa bibliografia na temat „ZnO based Schottky Thin film devices”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "ZnO based Schottky Thin film devices"

R. Sabity, Mowj, i Ghusoon M. Ali. "PERFORMANCE ANALYSIS OF PD/ZNO BASED FLEXIBLE UV MSM PHOTODETECTORS". Journal of Engineering and Sustainable Development 26, nr 5 (1.09.2022): 98–104. http://dx.doi.org/10.31272/jeasd.26.5.9.

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Flexible electronics and optoelectronics devices attract further attention in recent years. In this paper, we present the fabrication and photodetection properties of a flexible metal-semiconductor-metal UV photodetector based on a thin ZnO film with Pd Schottky electrodes. The active ZnO layer was created using a hydrothermal method on ITO/PET flexible substrates. Palladium employed as back-to-back Schottky contacts. Metal masks are designed and used to deposit palladium via thermal evaporation. To demonstrate the impact of ZnO on flexible substrates, the structural, optical, and electrical characteristics of the produced films were examined and assessed. I-V characteristics under dark and illumination conditions for a device were measured using a voltage range of -2.8 V to 2.8 V. The measured data were used to calculate device parameters and photodetection properties. Such as ideality factor, barrier height, saturation current, detectivity, responsivity, contrast-ratio, and efficiency. The proposed device exhibited a gain (efficiency of 200%} caused by trapping hole carrier at the ZnO-Pd interface.

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Zhang, Teng-Fei, Guo-An Wu, Jiu-Zhen Wang, Yong-Qiang Yu, Deng-Yue Zhang, Dan-Dan Wang, Jing-Bo Jiang, Jia-Mu Wang i Lin-Bao Luo. "A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction". Nanophotonics 6, nr 5 (22.11.2016): 1073–81. http://dx.doi.org/10.1515/nanoph-2016-0143.

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AbstractIn this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

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Zhang, Zhi Kun, Ji Ming Bian i Xiao Qiang Kou. "A Novel ZnO-Based Graphite-Insulator-Semiconductor Diode for Transferable Unipolar Electronic Devices". Advanced Materials Research 710 (czerwiec 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.710.29.

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In this paper, a novel ZnO-based graphite-insulator-semiconductor (GIS) diode was fabricated on graphite substrate by radio frequency (rf) magnetron sputtering. A SiO2 thin film was used as the insulator layer grown by electron beam evaporation technique. The measurement of current-voltage of the ZnO-based GIS diode showed a Schottky rectifying diode characteristic with a threshold voltage of 5.2 V and a poor leakage current of ~10-3 A under a reverse bias condition. An interesting negative capacitance phenomenon was also observed from the GIS diode. The successful fabrication of ZnO-based GIS diode on graphite substrate offers the significant opportunity to be readily transferred onto any rigid or flexible foreign substrates, since the graphite substrate consists of weakly bonded layer structure.

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Shen, Mei, Triratna P. Muneshwar, Ken Cadien, Ying Y. Tsui i Doug Barlage. "Optimization of Copper Schottky Contacts on Nanocrystalline ZnO thin films by Atomic Layer Deposition". MRS Advances 1, nr 50 (2016): 3421–27. http://dx.doi.org/10.1557/adv.2016.357.

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ABSTRACTContact metallization is an essential obstacle for utilizing low temperature achievable polycrystalline ZnO in any discrete devices and integrated circuits. To develop ZnO based semiconductor devices with advanced feature of flexibility, transparency and compatibility with low temperature processing, rectifying junctions must be fully developed. In this work, nanoscale polycrystalline ZnO thin films are fabricated with via low temperature (<200 °C) by atomic layer deposition (ALD). A vertical structure of bottom Schottky metallized diode is developed with copper (Cu) sputtered in room temperature. A control of Cu surface oxidation is realized with an in-situ remote plasma treatment. The results indicate that preparation of the copper surface substantially affects the electrical behavior of the diode. Thermal reliability of Cu metallized Schottky diode is subsequently carried out by annealing up to a maximum temperature of 300 °C before it breaks. This work considers the current transport mechanism evolved deviating current vs voltage (I-V) characteristics from conventional thermionic emission theory.

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Zafar, Mubeen, Muhammad Naeem Awais, Muhammad Asif, Amir Razaq i Gul Amin. "Fabrication and characterization of piezoelectric nanogenerator based on Al/ZnO/Au structure". Microelectronics International 34, nr 1 (3.01.2017): 35–39. http://dx.doi.org/10.1108/mi-11-2015-0092.

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Purpose The purpose of this research work is to harvest energy using the piezoelectric properties of ZnO nanowires (NW). Fabrication and characterization of the piezoelectric nanogenerator (NG), based on Al/ZnO/Au structure without using hosting layer, were done to harvest energy. The proposed method has full potential to harvest the cost-effective energy. Design/methodology/approach ZnO NW were fabricated between the thin layers of Al- and Au-coated substrates for the development of piezoelectric NG. To grow ZnO NW, ZnO seed layer was prepared on the Al-coated substrate, and then ZnO NW were grown by aqueous chemical growth method. Finally, Au top electrode was used to conclude the Al/ZnO/Au NG structure. The Al and Au electrodes were used to establish the ohmic and Schottky contacts with ZnO NW, respectively. Findings Surface morphology of the fabricated device was done by using scanning electron microscopy, and electrical characterization of the sample was performed with digital oscilloscope, picoammeter and voltmeter. The energy harvesting experiment was performed to excite the presented device. The fabricated piezoelectric-sensitive device revealed the maximum open circuit voltage up to 5 V and maximum short circuit current up to 30 nA, with a maximum power of 150 nW. Consequently, it was also shown that the output of the fabricated device was increased by applying the stress. The presented work will help for the openings to capture the mechanical energy from the surroundings to power up the nano/micro-devices. This research work shows that NGs have the competency to build the self-powered nanosystems. It has potential applications in biosensing and personal electronics. Originality/value The fabrication of simple and cost-effective piezoelectric NG is done with a structure of Al/ZnO/Au without using hosting layer. The presented method elucidates an efficient and cost-effective approach to harvest the mechanical energy from the native environment.

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Zhao, Shuaitongze, i Shifeng Xu. "Semiconductor Photoanode Photoelectric Properties of Methanol Fuel Cells". Journal of Nanoelectronics and Optoelectronics 16, nr 1 (1.01.2021): 72–79. http://dx.doi.org/10.1166/jno.2021.2906.

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One-dimensional TiO2, ZnO, and Fe2O3 nanorod arrays are selected as the photocatalytic methanol fuel cell photoanodes, and a greenhouse catalytic methanol fuel cell device is designed. With the photo-generated holes' participation in fuel molecules' oxidation in the semiconductor electrode, chemical energy is converted into electric energy. Firstly, with pot-doped tin dioxide (TRS) as the substrate, TiO2, ZnO, and Fe2O3 nanorod arrays are prepared by hydrothermal method. TiO2 and ZnO are excellent photoelectric catalytic materials with similar energy band capability and strong separation capability for photo-generated charges in the energy band analysis. With a narrow band gap, Fe2O3 can be oxidized by water with visible light. In the experiment, different anodes' photoelectric properties are tested by the Mott-Schottky equation, cyclic voltammetry, and electrochemical analysis. The results show that the ZnO-based photoanode's maximum short-circuit current can reach 1.86 mA/cm2, and its open-circuit voltage can reach 1.15 V, the ZnO-based photoanode's 0.92 mA/cm2 and 1.36 V, and the Fe2O3-based photoanode's 0.08 mA/cm2 and 1.18 V. Compared with Fe2O3 electrodes, TiO2 and ZnO thin-film electrodes have better photocurrent conversion ability in dark, simulated sunlight, and visible light conditions. Fe2O3 electrodes can also generate strong instantaneous anode photocurrents after irradiation.

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Jiang, Dayong, Jiying Zhang, Youming Lu, Kewei Liu, Dongxu Zhao, Zhenzhong Zhang, Dezhen Shen i Xiwu Fan. "Ultraviolet Schottky detector based on epitaxial ZnO thin film". Solid-State Electronics 52, nr 5 (maj 2008): 679–82. http://dx.doi.org/10.1016/j.sse.2007.10.040.

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Shen, Mei, Amir Afshar, Manisha Gupta, Gem Shoute, Ken Cadien, Ying Yin Tsui i Doug Barlage. "Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD". MRS Proceedings 1635 (2014): 127–32. http://dx.doi.org/10.1557/opl.2014.49.

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ABSTRACTAn electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively. The PEALD deposited ZnO Schotty diodes demonstrated an on/off rectifying ratio of about 25 at ±1 V. The leakage current values of the PLD deposited ZnO Schottky diodes are significantly larger than those of PEALD, leading to a poor on/off rectifying ratio of ∼4. Due to the small thickness, a critical breakdown strength of 1.3 MV/cm was estimated for PEALD-ZnO thin films.

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Trinchi, A., W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S. J. Ippolito, K. Kalantar-Zadeh i G. Sberveglieri. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC". Solid State Phenomena 99-100 (lipiec 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.

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The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.

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Ginting, M., i J. D. Leslie. "Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe". Canadian Journal of Physics 67, nr 4 (1.04.1989): 448–55. http://dx.doi.org/10.1139/p89-080.

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"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas the n-ZnO – p-Zn3P2 polycrystalline film devices, and the n-ZnO – p-single crystal CdTe "heterojunctions" behaved most like metal–insulator–semiconductor devices. The high series resistance of all devices had to be considered in the measurement and analysis, and it limited the photovoltaic performance. Deep-level transient spectroscopy measurements indicated majority (hole) traps in the CdTe and Zn3P2 with activation energies in agreement with previous measurements in the literature.

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Rozprawy doktorskie na temat "ZnO based Schottky Thin film devices"

Zhang, Jiawei. "Oxide-semiconductor-based thin-film electronic devices". Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html.

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Oxide semiconductors have been envisaged to find applications in ubiquitous flexible electronics in daily life such as wearable electronic gadgets to offer novel user experiences. However, one of the bottlenecks to realise these applications is a lack of oxide-semiconductor components capable of wireless communications. As Bluetooth and Wi-Fi are the two dominant communication interfaces, fast enough front-end rectifiers must be developed to operate at their gigahertz (GHz) transmission frequencies. Furthermore, despite of significant developments of n-type oxide semiconductors in the last decade, widespread flexible electronics also requires high-performance p-type oxide semiconductors for use in complementary logic circuits. The objectives of this dissertation are to develop high quality Schottky barriers, achieve GHz speed Schottky diodes on rigid and flexible substrates, evaluate the noise properties of the Schottky diodes, develop p-type oxide semiconductor using sputtering technology, elucidate the hole transport mechanism in p type transistors, and demonstrate their potential applications such as radio receivers, complementary inverters and ring oscillators. First, indium gallium zinc oxide (IGZO) Schottky diodes were fabricated by using radio frequency magnetron sputtering. The oxygen content at the metal-IGZO interface was found to have a profound effect on the electrical performance. By introducing 3% O2 during the deposition of Pt or IGZO, the diodes exhibited excellent electrical properties without requiring any annealing treatment, thus allowing for the realisation of flexible IGZO Schottky diodes. The high-frequency properties of Pt-IGZO Schottky diodes on glass substrates were optimised by testing a range of IGZO thicknesses and diode active areas. The achieved highest cut-off frequency was beyond 20 GHz, which is to the best of our knowledge the fastest oxide-semiconductor device to date. On flexible substrates, the diodes also showed cut-off frequencies up to 6.3 GHz, well beyond the critical benchmark speed of 2.45 GHz for typical wireless communications. In order to assess the feasibility of using IGZO Schottky diodes in practical applications, measurements were taken to discern their low-frequency noise properties. In the as-deposited diodes, logarithmic dependence of the noise spectral density on the applied bias was observed, revealing that the dominant noise was generated in the space-charge region at low biases and in the series-resistance region at high biases, respectively. After annealing the diodes, very different noise mechanism was observed and the interface-trap-induced noise dominated the noise spectra. As one of the most promising p-type oxide semiconductors, SnO was also studied at low temperatures in this thesis. The experiment revealed that hole-transport mechanism was governed by either band conduction or variable range hopping in different temperature ranges. Finally, the potential for fully oxide-based electronics was demonstrated by an amplitude-modulation radio receiver comprising of an IGZO Schottky diode as the demodulator and a complementary ring oscillator based on IGZO and SnO transistors. In reference to IEEE copyrighted material which is used with permission in this thesis, the IEEE does not endorse any of the University of Manchester's products or services. Internal or personal use of this material is permitted. If interested in reprinting/republishing IEEE copyrighted material for advertising or promotional purposes or for creating new collective works for resale or redistribution, please go to http://www.ieee.org/publications_standards/publications/rights/rights_link.html to learn how to obtain a License from RightsLink.

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Yilmaz, Koray. "Investigation Of Inse Thin Film Based Devices". Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/3/12605431/index.pdf.

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In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices. The structural properties of the deposited InSe and CdS thin films were examined through SEM and EDXA analysis. XRD and electrical measurements have indicated that undoped InSe thin films deposited on cold substrates were amorphous with p-type conductivity lying in the range of 10-4-10-5 (&
#61527
.cm)-1 at room temperature. Cd doping and post-depositional annealing effect on the samples were investigated and it was observed that annealing at 100 oC did not show any significant effect on the film properties, whereas the conductivity of the samples increased as the Cd content increases. Temperature dependent I-V and Hall effect measurements have shown that conductivity and carrier concentration increases with increasing absolute temperature while mobility is almost temperature independent in the studied temperature range of 100-430 K. The structural and electrical analysis on the as-grown CdS thin films have shown that the films were polycrystalline with n-type conductivity. Temperature dependent conductivity and Hall effect measurements have indicated that conductivity, mobility and carrier concentrations increases with increasing temperature. Transmission measurements on the as-grown InSe and CdS films revealed optical band gaps around 1.74 and 2.36 eV, respectively. Schottky diode structures in the form of TO/p-InSe/Metal were fabricated with a contact area of around 8x10-3 cm2 and characterized. The best rectifying devices obtained with Ag contacts while diodes with Au contacts have shown slight rectification. The ideality factor and barrier height of the best rectifying structure were determined to be 2.0 and 0.7 eV, respectively. Illuminated I-V measurements revealed open-circuit voltages around 300 mV with short circuit current 3.2x10-7 A. High series resistance effect was observed for the structure which was found to be around 588 &
#61527
. Validity of SCLC mechanism for Schottky structures was also investigated and it was found that the mechanism was related with the bulk of InSe itself. Heterostructures were obtained in the form of TO/n-CdS/p-InSe/Metal and the devices with Au and C contacts have shown the best photovoltaic response with open circuit voltage around 400 mV and short circuit current 4.9x10-8 A. The ideality factor of the cells was found to be around 2.5. High series resistance effect was also observed for the heterojunction devices and the fill factors were determined to be around 0.4 which explains low efficiencies observed for the devices.

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Pinkett, Shawn L. "Techniques to facilitate the fabrication of ZnO-based thin film bulk acoustic wave devices". Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/14889.

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Trivedi, Kruti. "Design, Fabrication and Characterization of ZnO based Thin Film Schottky Diodes and Transistors". Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5821.

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The thesis focuses on the development of thin film Schottky diodes and thin film transistors (TFTs) based on ZnO. ZnO has been recognized as a promising candidates for the next generation of transparent and flexible electronics for displays. Some of the interesting properties of ZnO include the variation from insulating to semiconducting nature by change of stoichiometry, the relative low toxicity enabling its use in edible materials, the presence of a reasonably high electron mobility and its high transmission to visible light. All of these properties have increased interest for the development of ZnO-TFTs and diodes. This work focuses on process development of thin film Schottky diodes( Al-ZnO-Ag) and transistors(Al-ZnO-ZrO2). The Schottky diodes were developed with thermally evaporated Aluminium ohmic contact and silver Schottky contact. The fabricated diodes had cut-in voltage between 1-2 V with mean reverse saturation current of 1.0 x 10^-7 A and an excellent rectification ratio of 10^6. Thin film transistors were developed with thermally evaporated Aluminium contacts for Gate, Source and Drain. Zinc oxide was used as semiconductor channel material. For process development of thin film transistors, Zinc oxide was used as semiconductor and a transparent thin film with transmittance of 83.45 % at 450 nm was deposited using DC Reactive sputtering of zinc in oxygen ambient of 1 x 10^-3 mbar. The optical bandgap was found to be around 3.15 eV. ZrO2 was selected as Gate dielectric because of its high dielectric constant, wide band gap and excellent chemical and thermal stability. The ZrO2 thin film was deposited by DC reactive sputtering in an oxygen ambient of 1.5 x 10^-3 mbar. The maximum drain to source current was found to be 25.45 mA and maximum leakage gate current was found to be 0.22 mA.

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Yenesew, Markos, i Markos Yenesew. "The Fabrication of Gas Sensing and Optoelectronic Devices Based on ZnO Nanostructures with Composites of Thin Film Metallic Glass and Ultrananocrystalline Diamond". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/d7332x.

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博士
國立臺灣科技大學
光電工程研究所
106
Abstract In this Ph.D. thesis, composites of ultrananocrystalline diamond (UNCD), thin film metallic glass (TFMG), and a forest of zinc oxide (ZnO) nanostructures (nanorods and nanotubes) have been developed for gas sensing and optoelectronic applications. The composite-structures provide a number of synergetic properties including a large surface area, optimized crystallinity, work function, electrical properties, and surface passivation layers. The ZnO based composite-structures offer good performance in applications for hydrogen gas sensors and ultraviolet (UV) photodetectors. Simple two-step hydrothermal method in conjunction with microwave plasma enhanced chemical vapor deposition (MPECVD) system have been applied to synthesize ZnO nanorods and UNCD films, respectively. Additionally, radio frequency (RF) magnetron sputtering technique was used for the deposition of TFMG. The grown ZnO-based composite-structures in this thesis emphasized controlling the surface morphology of UNCD films beneath ZnO nanostructures. Defect-controlled gas sensitivity were investigated by varying deposition time of UNCD films. It is found that a partially grown UNCD films that were deposited for 7.5 min are the optimized underlayers for hydrogen gas sensing applications. These optimized ZnO-based composite structures exhibit extremely higher gas response than that of the pristine ZnO sensor. The reason for the improvement in sensing performance of the composite-structures have been investigated in terms of the defect-related sensitivity and energy band theory of the heterostructures. Furthermore, in this thesis, a metal-semiconductor-metal (MSM) UV photodetectors have been fabricated by using a silicon substrate on top of which a silver paste was deposited as an electrode. Bilayer of TFMG/ZnO nanotubes were grown on UNCD films and this ZnO-based composite-structures have enhanced their optoelectronic properties. The nanostructures are characterized by SEM, EDX, TEM, HRTEM, XRD, Raman, and PL spectroscopy. From the characterization of the materials, we observed that these nanostructures emit a ~ 377 nm (UV) usually called the near band edge emission and a band green band related to the defects and surface states at about 600 nm. The ZnO-based composite-structures are successfully synthesized at low manufacturing temperatures. This dissertation gives an overview of the optical properties of composites of UNCD, TFMG, and ZnO nanostructures and proposes an effective way to enhance the efficiency of optoelectronic and hydrogen gas sensing devices. The fabrication of ZnO-based composite- structures will be useful for the development of next-generation devices.

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Części książek na temat "ZnO based Schottky Thin film devices"

Mahaboob Jilani, S., i P. Banerji. "Effect of ZnO Loading on the Electrical Characteristics of Graphene Oxide-ZnO Based Thin Film Transistors". W Physics of Semiconductor Devices, 615–16. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_156.

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Barua, Sreeparna, Anup Dey, Subhashis Roy i Subir Kumar Sarkar. "Comparative Study of n-ZnO/SiO2/p-Si and Pd/n-ZnO/SiO2/p-Si Thin Film-Based H2 Sensor Fabricated by Sol-gel Process". W Advances in Communication, Devices and Networking, 79–85. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7901-6_10.

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Liu, Weizhen, Cen Zhang, Haiyang Xu i Yichun Liu. "ZnO-based ultraviolet light-emitting materials and devices". W Semiconducting Metal Oxide Thin-Film Transistors. IOP Publishing, 2020. http://dx.doi.org/10.1088/978-0-7503-2556-1ch4.

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Matsui, Hiroaki. "Biological Sensing Using Infrared SPR Devices Based on ZnO". W Biomedical Engineering. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.104562.

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Biological detection based on surface plasmon resonances (SPRs) on metallic Ga-doped zinc oxide (ZnO: Ga) film surfaces is introduced as one of the interesting functionalities of ZnO. SPRs on ZnO: Ga films (ZnO-SPRs) have attracted much attention as alternative plasmonic materials in the infrared (IR) range. This chapter focuses on the structure and optical properties of ZnO-SPR with different layer structure from experimental and theoretical approaches. First, the plasmonic properties of single ZnO: Ga films excited by Kretschmann-type SPRs were investigated. Second, an insulator–metal–insulator structure with a ZnO: Ga film applied as a metal layer is introduced. Finally, hybrid layer structures with the capping of thin dielectric layers to ZnO-SPR (dielectric-assisted ZnO-SPR) were fabricated to enhance SPR properties in the IR range. The biological sensing on ZnO-SPR is experimentally demonstrated by measuring biological interactions. This work provides new insights for fabricating biological sensing platforms on ZnO materials.

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Robinson Azariah John Chelliah, Cyril, i Rajesh Swaminathan. "Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition". W Practical Applications of Laser Ablation. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96161.

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The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.

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Streszczenia konferencji na temat "ZnO based Schottky Thin film devices"

Varma, Tarun, C. Periasamy i Dharmendar Boolchandani. "Electrical and UV detection properties of ZnO thin film based schottky contacts deposited by RF magnetron sputtering". W 2017 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2017. http://dx.doi.org/10.1109/icedss.2017.8073656.

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Rajan, Lintu, C. Periasamy i Vineet Sahula. "Noble metal schottky contacts on nanocrystalline RF sputtered ZnO thin film". W 2017 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2017. http://dx.doi.org/10.1109/icedss.2017.8073660.

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Armoot, Shahad T., i Ghusoon M. Ali. "Monocrystalline ZnO Nanorods Thin-film based Schottky Barrier Diode". W 2022 IEEE 22nd International Conference on Nanotechnology (NANO). IEEE, 2022. http://dx.doi.org/10.1109/nano54668.2022.9928680.

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Rogers, David J., Ferechteh Hosseini Teherani, Alireza Yasan, Ryan P. McClintock, Kathryn Mayes, Shaban R. Darvish, Patrick Kung, Manijeh Razeghi i Guy Garry. "ZnO thin film templates for GaN-based devices". W Integrated Optoelectronic Devices 2005, redaktorzy Manijeh Razeghi i Gail J. Brown. SPIE, 2005. http://dx.doi.org/10.1117/12.596912.

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Shin, W. C., K. Remashan, M. S. Oh, S. J. Park i J. H. Jang. "Ring Oscillator Circuit based on ZnO Thin Film Transistors". W 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.g-8-3.

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Ali, Ghusoon M., i P. Chakrabarti. "Fabrication and characterization of nanostructure thin film ZnO Schottky contacts based UV photodetectors". W SPIE NanoScience + Engineering, redaktorzy Eva M. Campo, Elizabeth A. Dobisz i Louay A. Eldada. SPIE, 2013. http://dx.doi.org/10.1117/12.2044921.

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Wei, Yuefan, Zhaoyao Zhan, Hejun Du i Van-Thai Tran. "Influence of annealing to the defect of inkjet-printed ZnO thin film". W Oxide-based Materials and Devices IX, redaktorzy Ferechteh H. Teherani, David C. Look i David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2286856.

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Chakrabarti, Subhananda, Punam Murkute, Hemant Ghadi, Shantanu Saha i Vinayak Chavan. "Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation". W Oxide-based Materials and Devices IX, redaktorzy Ferechteh H. Teherani, David C. Look i David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2288944.

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Chen, K. J., F. Y. Hung, S. J. Chang i S. J. Young. "Physical Characteristic of UV Photodetectors based on Sol-gel Derived ZnO Thin Film". W 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.p-9-4.

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Hung, Ching-Wen, Huey-Ing Chen, Tzu-Pin Chen, Tsung-Han Tsai i Wen-Chau Liu. "Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film". W 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-6-10.

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