Rozprawy doktorskie na temat „Zinc Magnesium Oxide”
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Hlaing, Oo Win Maw. "Infrared spectroscopy of zinc oxide and magnesium nanostructures". Online access for everyone, 2007. http://www.dissertations.wsu.edu/Dissertations/Fall2007/w_hlaingoo_121107.pdf.
Pełny tekst źródłaBernard, Sheldon Ainsworth. "Influence of silicon dioxide, magnesium oxide and zinc oxide on resorbable tricalcium phosphate based bioceramics". Online access for everyone, 2005. http://www.dissertations.wsu.edu/Thesis/Fall2005/s%5Fbernard%5F083005.pdf.
Pełny tekst źródłaFelker, Daniel L. "Studies of oxide-free phosphates film surfaces on magnesium, zinc, and manganese by X-ray photoelectron spectroscopy /". Search for this dissertation online, 2005. http://wwwlib.umi.com/cr/ksu/main.
Pełny tekst źródłaBose, Sourav. "Development and Study of Earth-Abundant Oxide Based Thin Films for Solar Cells by Ultrasonic Spray Pyrolysis : From Unbeknownst to Erudite Processes". Electronic Thesis or Diss., Université de Lorraine, 2022. http://www.theses.fr/2022LORR0131.
Pełny tekst źródłaThe results on elaboration of environmentally compatible, earth-abundant metal oxide thin films using the technique of ultrasonic spray pyrolysis are presented. Three essential materials are developed for the purpose of realization of an “all-oxide” solar cell device: Zinc oxide (ZnO) as window layer; zinc magnesium oxide (ZnMgO) as a buffer layer and cuprous oxide (Cu2O) used as an absorber layer. Comprehensive design of experiments was set up for the elaboration of each material. Highly transparent ZnO was elaborated in wide range of thickness with high crystalline qualities with specific elaboration temperature with a precise control on the concentration of the precursors. ZnMgO was elaborated by varying the molar compositions of the magnesium precursor in the precursor solution. Up to nearly 30 % of Mg, the ZnMgO films exhibited single crystalline phase with high transparencies. High-absorbing Cu 2 O elaboration was optimized with effective control on the elaboration temperature and the concentration of a new reducing agent (D-sorbitol). To expand the horizon of efficiency of our elaboration process, two more materials, ZnAlO and ZnAlMgO, were elaborated. It was found that the optical, electrical, and structural properties of the ZnAlO films could be modulated for use in “all-oxide” solar cells by varying magnesium (up to 7 mol%) and aluminum (up to 2 %). The bandgap energies and the electrical properties of the films were modulated with the co-doping so that they can be integrated as window/top-contact/buffer layers in “all-oxide” solar cells. Additionally, simulations performed using Silvaco Atlas® and Solis also demonstrates the applicability of these films for “all-oxide” solar cells
Bittau, Francesco. "Analysis and optimisation of window layers for thin film CDTE solar cells". Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32642.
Pełny tekst źródłaFrenzel, Peter, Andrea Preuß, Jörn Bankwitz, Colin Georgi, Fabian Ganss, Lutz Mertens, Stefan E. Schulz, Olav Hellwig, Michael Mehring i Heinrich Lang. "Synthesis of Mg and Zn diolates and their use in metal oxide deposition". Royal Society of Chemistry, 2019. https://monarch.qucosa.de/id/qucosa%3A33722.
Pełny tekst źródłaAbbali, Zineb. "Etude de la cristallisation de ferrites spinelles dans des verres borates". Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb376110731.
Pełny tekst źródła"Formation of MgO nanorods by displacement reactions between Mg and ZnO". 2004. http://library.cuhk.edu.hk/record=b5892021.
Pełny tekst źródłaThesis (M.Phil.)--Chinese University of Hong Kong, 2004.
Includes bibliographical references.
Text in English; abstracts in English and Chinese.
Yau Man Yan Eric = Mei he yang hua xin fan ying zhi bei yang hua mei na mi bang / You Wenren.
Acknowledgement --- p.i
Abstract --- p.ii
摘要 --- p.iii
Table of contents --- p.iv
List of tables --- p.viii
List of figures --- p.ix
Chapter Chapter 1 --- Introduction
Chapter 1.1 --- Nanostructured materials --- p.1-1
Chapter 1.2 --- Application of nano-materials --- p.1-1
Chapter 1.3 --- Current development of nano-materials --- p.1-2
Chapter 1.4 --- Synthesis of nano-materials --- p.1-2
Chapter 1.4.1 --- Physical methods --- p.1-3
Chapter 1.4.1.1 --- Physical vapor deposition --- p.1-3
Chapter 1.4.1.2 --- Arc-discharge process --- p.1-3
Chapter 1.4.1.3 --- Laser ablation --- p.1-4
Chapter 1.4.2 --- Chemical methods --- p.1-4
Chapter 1.4.2.1 --- Chemical vapor deposition --- p.1-4
Chapter 1.4.2.2 --- Metal-organic chemical vapor deposition (MOCVD) --- p.1-4
Chapter 1.4.2.3 --- Solgel method --- p.1-5
Chapter 1.5 --- Study on growth mechanism of nano-materials --- p.1-5
Chapter 1.5.1 --- Vapor-liquid-solid (VLS) mechanism --- p.1-5
Chapter 1.5.2 --- Vapor-solid (VS) mechanism --- p.1-6
Chapter 1.6 --- Applications of Magnesium Oxide (MgO) materials --- p.1-7
Chapter 1.7 --- Previous works on MgO nanostructures --- p.1-8
Chapter 1.7.1 --- Network like MgO nanobelts --- p.1-8
Chapter 1.7.2 --- Decorated MgO crystalline fibers --- p.1-9
Chapter 1.7.3 --- Mg2Zn11 - MgO belt-like nanocables --- p.1-9
Chapter 1.7.4 --- MgO nanowires with uniform diameter distribution --- p.1-10
Chapter 1.7.5 --- Aligned MgO nanorods on MgO (100) substrates --- p.1-11
Chapter 1.8 --- Objectives and approaches of this project --- p.1-12
Chapter 1.8.1 --- Addition of sodium chloride (NaCl) --- p.1-13
Chapter 1.9 --- Thesis Layout --- p.1-13
Chapter 1.10 --- References --- p.1-15
Chapter Chapter 2 --- Methodology and Instrumentation
Chapter 2.1 --- Introduction --- p.2-1
Chapter 2.2 --- Powder Metallurgy --- p.2-1
Chapter 2.3 --- Sample fabrication --- p.2-1
Chapter 2.3.1 --- Starting materials --- p.2-1
Chapter 2.3.2 --- Cold pressing --- p.2-2
Chapter 2.3.2.1 --- Single pellet method --- p.2-2
Chapter 2.3.2.2 --- Double pellet method --- p.2-3
Chapter 2.3.3 --- Argon tube furnace sintering --- p.2-3
Chapter 2.4 --- Study of fabrication parameters --- p.2-4
Chapter 2.4.1 --- Heat treatment temperature --- p.2-4
Chapter 2.4.2 --- NaCl content in sample --- p.2-4
Chapter 2.4.3 --- Duration of heat treatment --- p.2-5
Chapter 2.5 --- Control Experiments --- p.2-5
Chapter 2.5.1 --- Effect of addition of NaCl --- p.2-5
Chapter 2.5.2 --- Effect of residual oxygen --- p.2-5
Chapter 2.5.3 --- Geometrical effect of experimental setup --- p.2-6
Chapter 2.5.3.1 --- Compressed double pellet method --- p.2-6
Chapter 2.5.3.2 --- Powder on Magnesium pellet method --- p.2-6
Chapter 2.5.3.3 --- Single pellet method --- p.2-7
Chapter 2.6 --- Characterization Methods --- p.2-7
Chapter 2.6.1 --- Thermal analysis - Differential thermal analyzer (DTA) --- p.2-7
Chapter 2.6.2 --- Structural analysis --- p.2-7
Chapter 2.6.2.1 --- Scanning electron microscopy (SEM) --- p.2-7
Chapter 2.6.2.2 --- Transmission electron microscopy (TEM) --- p.2-8
Chapter 2.6.3 --- Phases determination - X-ray powder diffractometry (XRD) --- p.2-8
Chapter 2.7 --- References --- p.2-9
Chapter Chapter 3 --- Results of Mg-ZnO-NaCl System
Chapter 3.1 --- Introduction --- p.3-1
Chapter 3.2 --- Results of thermal analysis --- p.3-1
Chapter 3.2.1 --- Chemical reactions --- p.3-1
Chapter 3.2.2 --- DTA results --- p.3-2
Chapter 3.3 --- Variation of heat treatment temperature --- p.3-3
Chapter 3.3.1 --- XRD pattern --- p.3-3
Chapter 3.3.2 --- SEM images --- p.3-4
Chapter 3.4 --- Variation of NaCl content --- p.3-5
Chapter 3.4.1 --- TEM analysis --- p.3-5
Chapter 3.5 --- Variation of duration of heat treatment --- p.3-6
Chapter 3.6 --- Additional findings --- p.3-7
Chapter 3.7 --- Discussions --- p.3-7
Chapter 3.8 --- References --- p.3-10
Chapter Chapter 4 --- Results of Control Experiments
Chapter 4.1 --- Introduction --- p.4-1
Chapter 4.2 --- The study of Mg-ZnO system --- p.4-1
Chapter 4.3 --- The study of residual oxygen effect --- p.4-2
Chapter 4.4 --- The study of geometrical effect of experiment setup --- p.4-2
Chapter 4.5 --- Discussions --- p.4-3
Chapter 4.5.1 --- Effect of addition of NaCl --- p.4-3
Chapter 4.5.2 --- Effect of residual oxygen --- p.4-3
Chapter 4.5.3 --- Role of ZnO --- p.4-4
Chapter 4.5.4 --- Growth model --- p.4-4
Chapter 4.6 --- References --- p.4-7
Chapter Chapter 5 --- Conclusions and Further Studies
Chapter 5.1 --- Conclusion --- p.5-1
Chapter 5.2 --- Further studies --- p.5-2
Chapter 5.3 --- References --- p.5-3
LIN, YI-AN, i 林奕安. "Process Development of Magnesium Gallium Zinc Oxide Films by RF Magnetron Sputtering Method". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3gcy64.
Pełny tekst źródła國立雲林科技大學
電子工程系
106
In this work, RF magnetron sputtering method has been used to deposit MGZO thin films on silicon substrates (100) and glass substrates at room temperature, respectively. The properties of the MGZO films have been optimized by changing the parameters of deposition and post-annealing processes. The effects of working pressure, sputtering gas flow rate, film thickness, target composition ratio, annealing temperature, annealing time, heating rate, and annealing ambience to the MGZO film properties have been investigated. The morphology, microstructure, composition, electrical properties and optical properties of the MGZO films have been characterized for optoelectronic applications. According to our experimental results, the optimal p-type MGZO film has a resistivity as low as 5.167"×" 10-2 Ω-cm, hall mobility as high as 8.33 cm2/V-s, and carrier concentration as high as 2.834"×" 1018 cm-3; while the optimal n-type MGZO film has a resistivity as low as 2.629"×" 10-2 Ω-cm, hall mobility as high as 7.124 cm2/V-s, and carrier concentration as high as 2.138"×" 1019 cm-3. All of the MGZO films made in this work have achieved more than 90% transmittance in visible region (380 nm - 780 nm). A heterojunction diode has been fabricated on the n-type silicon substrate (111) with the optimal p-type MGZO film.
Schleife, André [Verfasser]. "Exciting imperfection : real-structure effects in magnesium-, cadmium-, and zinc-oxide / von André Schleife". 2010. http://d-nb.info/1012878783/34.
Pełny tekst źródłaArndt, Sebastian [Verfasser]. "Stability of lithium doped magnesium oxide and zinc oxide catalysts for the conversion of natural gas / vorgelegt von Sebastian Arndt". 2010. http://d-nb.info/1011021870/34.
Pełny tekst źródłaHung-HsuLin i 林泓旭. "Investigation of magnesium zinc oxide thin film transistors fabricated by sputtered system and their optoelectronic application". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/99837492176738674372.
Pełny tekst źródłaLo, Yu Hsin, i 羅煜欣. "Preparation and Applications of RF-Sputtered Transparent Conductive Thin Films of Aluminum-doped Magnesium Zinc Oxide". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/95050505582488352997.
Pełny tekst źródła長庚大學
化工與材料工程學系
99
The objectives of this research are to preare the ceramic targets of aluminum-doped magnesium zinc oxid (AMZO) by solid-state reactions and the thin films of AMZO by RF magnetron sputtering. In addition, the effects of the amount of alumina and magnesium dopant in the AMZO targets as well as other sputtering parameters on the electrical, optical, and structural properties of AMZO thin films was also investigated. Finally, AMZO thin film would be applied for CIGS solar cell. In the result, the Zn0.94Mg0.06O with 1 wt% Al2O3 at different sintering temperature exhibit the same hexagonal wurtzite ZnO structure. The lowest resistivity of 6.2×10-3 Ω-cm was abtained for the sintering of AMZO target at temperature of 1400℃ and less than 5% weight loss. It was also found that the AMZO ceramic targets with different Al2O3 or Mg contents at sintering temperature of 1400℃ excludes the possibility of ant extra phases. In conclusion, the resistivity and the relative density of the target by AMZO target were 2.6 x 10-3 Ω-cm and 98.46%, respectively. The best performance of the electricity could achieve under the hybrid amount of Al2O3 and the sintered temperature were 3 wt% and 1400 ℃, respectively. Following the application by the AMZO target, the thin films were prepared by RF sputtering system and subtract temperature, power and working pressure were be discussed of the thin film were studied. Compared to the performance of AMZO thin film, the resistivity, mobility concentration, mobility, average transmittance (400 -1200 nm ) and band gap were 1.7 x 10-3 Ω-cm, 3.25 x 1020 cm-3, 11.3 cm2/Vs, 93.1% and 3.68 eV, respectively, under the subtract temperature, power, working pressure and deposited minutes were 320℃, 80 W, 9 mtorr and 15 min, respectively. By implying the AMZO target with different amounts of Al2O3 wt%, compared to the electricity and the optic properties of the AMZO thin film, the best resistivity, mobility concentration, mobility, average transmittance ( 400 -1200 nm ) and band gap were 7.61 x 10-4 Ω-cm, 5.01 x 1020 cm-3, 16.4 cm2/Vs, 91.5% and 3.7 eV, respectively, by the AMZO target with 2 wt% Al2O3:Zn0.98Mg0.02O.
Jou, Jia Chiuan, i 周家全. "Preparation and Applications of RF-Sputtered Transparent Conductive Thin Films of Gallium-doped Magnesium Zinc Oxide". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/63310618514172458451.
Pełny tekst źródła長庚大學
化工與材料工程學系
100
The preparation of transparent conductive gallium-doped magnesium zinc oxide (GMZO) thin films with good near infrared transmission by radio frequency (RF) magnetron sputtering using a single GMZO ceramic target was explored In addition, the different of GMZO target conditions on the structural, electrical and optical properties on the RF-sputtered GMZO thin films was also investigated and sputtering processes prepared optimization GMZO transparent conductive film application in the CIGS solar cells. Then, the window on the component layer (buffer layer / intrinsic layer / transparent conductive layer) was optimized to increase the optical transmittance by the optical simulation software, increasing the efficiency of photoelectric conversion in the CIGS solar cells. This study results show that the ceramic target in GMZO, that in the amount of 3 wt% Ga2O3 and amount of 2 at% Mg doped with hexagonal wurtzite ZnO structure, the lowest resistivity of 1.2×10-3 Ω cm and the weight loss is less than 5% conditions was held at sintering conditions of a positive argon pressure of 50 kPa and the sintering temperature of 1400 ° C The preparation of the GMZO transparent thin film by RF magnetron sputtering method use to the above-mentioned preparation GMZO ceramic target, that was investigated the structure, electrical and optical properties. The sputtering process conditions on GMZO transparent conductive film structure has not changed much, their preferred orientations are (002) direction, and all belong to the ZnO wurtzite structure. Transparent conductive GMZO thin films with resistivity as low as 2.89 x10-4 Ω cm with a higher carrier concentration of 11.8 x1021 cm-3 and electron mobility of 18.2 cm2/ Vs, good near infrared transmittance (>89%) and bandgap value of about 3.73 eV were successfully prepared on glass substrates by single cathode RF magnetron sputtering using a GMZO ceramic target with the composition of 95 % Zn0.98Mg0.02O and 5 wt% Ga2O3 without post deposition annealing. The preparation of the window layer antireflection coating design and application to CIGS solar cell by using optical simulation software (Film Star) was explored. Finally, Anti-reflective coating was optimized and applied in window layer of CIGS solar cell. Experimental results show that the window layer penetration to enhance short-circuit current and the photoelectric conversion efficiency of CIGS solar photoelectric conversion element of the phenomenon of both increased. The maximum conversion efficiency was 8.22%,and short-circuit current increased 38 percent.
Kuo, Ping-Chin, i 郭平進. "The electro-optical characteristics and hydrogen sensing properties of indium zinc magnesium oxide films deposited by co-sputtering". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/2yfzvv.
Pełny tekst źródła崑山科技大學
電機工程研究所
104
In this study,IMZO was co-sputted on a glass substrate by changing process parameters such as MgO doped with different power, different process time, different substrate temperature, in order to develop the opto -electronic characteristics of IMZO films Moreover, a different process pressure of IMZO films were deposited on silicon substrates, and then platinum (Pt) films were coated on the films as an interdigitated electrode sensing electrode to study sensing properties of H2. Experimental results show that, IMZO thin film in XRD diffraction analysis are no obvious diffraction peak in three different parameters specimen, so the film exists amorphous structure. By the Ultraviolet -Visible analyzer measurements, films reached more than 80% in visible wavelength range. During MgO doped test, the results show that the resistivity can be reduced in a few MgO doped. We can get the best resistivity value of 5.8x10-3Ω-cm at 80W doped power. At different process time experiment, when time increases, the particles formed on film surface with different types of accumulation from loose to dense. The phenomenon makes the carrier concentration and mobility increased, as well the resistivity value tend to a downward trend. When the process time of 20 minutes, we obtain the best resistivity value of 5.81x10-3Ω-cm. At different substrate temperature test, due to the thermal energy in a ion sputtering process getting more energy, the process can improve the movement of deposited atoms. The results can let the film more uniform, thus the resistivity value decreased. We obtain optimal resistance of 5.21x10-3Ω-cm at 200oC substrate temperature. Hydrogen sensing experiments of IMZO film are mainly carried out at room temperature (28oC), The dry air and the drying air mixing with hydrogen (H2) atmosphere are inputed for looping sensing. Two kind of process pressures, 3 mtorr and 35 mtorr were investigated for IMZO film on silicon substrate and then Pt was plated on the films as interdigitated electrode for sensing. The results show that the sample prepared at 3 mtorr and 35 mtorr obtains the sensitivity of 6.7% and 27.5% respectively in 1000ppm hydrogen concentration. Therefore high process pressure have more fast-growing and let the surface more roughness, the surface area increase can enhance the sensing property. For different hydrogen concentrations tests at 35 mtorr sensing sensitivity, the sensitivity increase with H2 concentration increase and then decrease at high H2 concentration. The reason may be the surface of a thin film containing a saturated hydrogen atoms at high H2 concentration, therefore hydrogen can not be completely desorbed at next run.
Liao, Shu-Ming, i 廖述民. "Study of Zinc Magnesium Oxide Window Layer Fabricated by Sputtering for Cu(In,Ga)(S,Se)2 Solar Cell Application". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/newwev.
Pełny tekst źródłaChen, Chih Hsiu, i 陳芝岫. "Preparation of RF-Sputtered Magnesium Zinc Oxide Thin Films and Their Applications as Buffer Layers in Cu(In,Ga)Se2 Solar Cells". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/25925693303105479719.
Pełny tekst źródła長庚大學
化工與材料工程學系
101
Magnesium zinc oxide (MgxZn1-xO ) thin films were prepared by RF- magnetron sputtering and attempted to used as buffer layer and intrinsic layer in Cu(In,Ga)Se2 solar cells. The effects of substrate temperature, sputtering power, working pressure, and oxygen flow rate on the structural, electrical and optical properties of Mg0.02Zn0.98O thin films were also investigated. Mg0.02Zn0.98O thin films with resistivity as low as 2.96 ×103 Ω-cm were obtained at the deposition condition of substrate temperature 150 ℃, sputtering power 40 W, working pressure 3 mtorr, pure Ar atmosphere with Ar flow arte being 10 sccm. By increasing the oxygen flow rate in the working gas, the resistivity of Mg0.02Zn0.98O thin films was found to increase. By using Mg0.02Zn0.98O thin films deposited without substrate being heated to replace CdS as buffer layer (CIGS/Mg0.02Zn0.98O/i-ZnO/GMZO) or ZnO as intrinsic layer (CIGS/CdS/Mg0.02Zn0.98O/GMZO), the photovoltaic conversion efficiencies of the CIGS solar cells were, respectively, 1.618% and 1.693%, which were better than that of the CIGS solar cells (1.363%) with the structure of CIGS/Mg0.02Zn0.98O/GMZO. However, by replacing Mg0.02Zn0.98O with Mg0.05Zn0.95O, the photovoltaic conversion efficiency of the CIGS solar cells with the structure of CIGS/Mg0.05Zn0.95O/GMZO improved to 3.513%.
Anju, V. G. "Electrocatalysis using Ceramic Nitride and Oxide Nanostructures". Thesis, 2016. http://etd.iisc.ac.in/handle/2005/2919.
Pełny tekst źródłaAnju, V. G. "Electrocatalysis using Ceramic Nitride and Oxide Nanostructures". Thesis, 2016. http://etd.iisc.ernet.in/handle/2005/2919.
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