Gotowe bibliografie tematyczne / X-RAY DEVICE

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Gotowa bibliografia na temat „X-RAY DEVICE”

Autor: Grafiati

Data publikacji: 11 września 2023

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Artykuły w czasopismach na temat "X-RAY DEVICE"

Butler, M., i MW Regan. "A Novel X-Ray Targeting Device". Annals of The Royal College of Surgeons of England 89, nr 2 (marzec 2007): 179. http://dx.doi.org/10.1308/rcsann.2007.89.2.179b.

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Gambato, Marco, Nicola Scotti, Giacomo Borsari, Jacopo Zambon Bertoja, Joseph-Domenico Gabrieli, Alessandro De Cassai, Giacomo Cester, Paolo Navalesi, Emilio Quaia i Francesco Causin. "Chest X-ray Interpretation: Detecting Devices and Device-Related Complications". Diagnostics 13, nr 4 (6.02.2023): 599. http://dx.doi.org/10.3390/diagnostics13040599.

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This short review has the aim of helping the radiologist to identify medical devices when interpreting a chest X-ray, as well as looking for their most commonly detectable complications. Nowadays, many different medical devices are used, often together, especially in critical patients. It is important for the radiologist to know what to look for and to remember the technical factors that need to be considered when checking each device’s positioning.

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Kalaiselvi, S. M. P., T. L. Tan, A. Talebitaher, P. Lee i R. S. Rawat. "Optimization of neon soft X-ray emission from 200 J plasma focus device for application in soft X-ray lithography". International Journal of Modern Physics: Conference Series 32 (styczeń 2014): 1460323. http://dx.doi.org/10.1142/s2010194514603238.

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The Fast Miniature Plasma Focus (FMPF) device is basically made up of coaxial electrodes with centrally placed anode and six cathode rods surrounding them concentrically. They are enclosed in a vacuum chamber, filled with low pressure operating gas. However, in our experiments, these cathode rods were removed to investigate the influence of them on neon soft X-ray (SXR) and hard X-ray (HXR) emission from the device. On removal of cathode rods, the cathode base plate serves as cathode and the plasma sheath is formed between the anode and the base plate of cathode. Neon was used as the operating gas for our experiments and the FMPF device used is of 235 J energy capacities. The experimental results showed that the FMPF device was able to focus better and the SXR emission efficiency was five times higher without cathode rods than with cathode rods. On the contrary, HXR emission did not vary with and without cathode rods. This observed phenomenon was further cross-checked through imaging of plasma dynamics, with and without cathode rods. FMPF device consists of 4 Pseudo Spark Gap (PSG) switches, which need to operate synchronously to deliver high voltage from capacitors to the anode. It was also seen that, the presence or absence of cathode rods also influence the synchronous operation of PSG switches. It also implies that this is one definite way to optimize the SXR emission from the FMPF device. This study reveals an important finding that, cathode rods play a vital role in the formation of plasma sheath with consequential influence on the radiation emission from plasma focus devices. Enhancement of the X-ray emission from this device is definitely a stepping stone in the realization of this device for industrial applications such as X-ray lithography for semiconductor industries.

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Sharma, Anju, Preeth Sivakumar, Andrew Feigel, In Tae Bae, Lawrence P. Lehman, Joseph Gregor, James Cash i Joseph Kolly. "Effects of x-ray exposure on NOR and NAND flash memories during high-resolution 2D and 3D x-ray inspection". International Symposium on Microelectronics 2016, nr 1 (1.10.2016): 000660–65. http://dx.doi.org/10.4071/isom-2016-thp53.

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Abstract In this paper, we present a detailed study on the effects of x-ray exposure on data corruption in commercially available NOR and NAND flash memory devices during x-ray inspection with a high-resolution Phoenix Nanomex system from GE. We investigated role of the x-ray tube voltage, tube current, device orientation, x-ray filters and photon energy. We explored the low exposure regime in detail when the first byte errors start occurring and also determined the absorbed dose for 100% byte errors. No data corruption was observed after the normal 2D x-ray inspection and CT scans of the NOR and NAND flash memory devices under study. However, increase in the tube voltage, tube current and/or the x-ray beam size resulted in byte errors which increased exponentially with the exposure time. The byte error rate was found to be much more sensitive to the tube voltage than the tube current. It was also affected by the device orientation with respect to the x-ray beam. The NAND flash memories were found to be more susceptible to data corruption from x-ray exposure than the NOR devices examined in this work. Some NOR devices were irradiated with the monochromatic x-rays from the CHESS synchrotron facility at Cornell University. Of all the photon energies used in this study, 12 keV x-ray irradiation resulted in the highest byte error rate. In this paper, we thus present a direct proof that it is the low-energy photon absorption that plays a major role in introducing bit errors in flash memories. Commonly available low-energy x-ray filters such as Cu and Al foils were found to be effective in preventing data corruption in such devices for long exposure time. Use of lower tube voltage, lower tube current, smaller x-ray spot size, short exposure time and low-energy x-ray filters, is recommended to prevent data corruption during 2D and 3D x-ray inspection of flash memory devices and other semiconductor devices in general.

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Grunthaner, F. J. "Fundamentals of X-Ray Photoemission Spectroscopy". MRS Bulletin 12, nr 6 (wrzesień 1987): 60–64. http://dx.doi.org/10.1557/s0883769400067245.

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AbstractRapid progress in the development of new electronic materials and the steady maturation of silicon-based technologies has resulted in a host of novel electronic devices in which the active region of the structure is confined to an interface or a surface. The chemical, electronic, and physical characterization of surfaces and interfaces in semiconductors and insulators is of critical importance to manufacturing process control as well as to the fundamental electron physics and materials science which support microelectronic device research.

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Murphy, Michael C., i Michael R. Wilds. "X-Rated X-Ray Invades Privacy Rights". Criminal Justice Policy Review 12, nr 4 (grudzień 2001): 333–43. http://dx.doi.org/10.1177/0887403401012004005.

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X-rated X-ray machines utilizing backscatter technology are strip-searching unsuspecting travelers as they pass through our nation's border and airport checkpoints. These machines not only check for explosives, drugs, or other contraband, but also are capable of counting hairs on a man's chest or measuring the depth of a woman's navel. At the same time the machines are checking for contraband, they can produce an X-rated image comparable in quality to those found in Playboy magazine. This article focuses on the efficacy of the device, the need to protect society, and individual privacy rights in light of the boundaries provided by Fourth Amendment search and seizure laws. Supporting arguments advanced for use of backscatter technology include (a) the enhanced security to society, (b) reduced invasiveness of the search, and (c) the reduction in health risks associated with the use of the devices. Opposing arguments focus upon the slippery slope and unacceptable degree of intrusion upon the privacy rights of the individual. The article concludes by framing the legal arguments within an analysis of the opportunity costs associated with implementation of the X-rated X-ray devices.

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Kärtner, Franz X. "Terahertz accelerator based electron and x-ray sources". Terahertz Science and Technology 13, nr 1 (marzec 2020): 22–31. http://dx.doi.org/10.1051/tst/2020131022.

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The generation and use of THz radiation for electron acceleration and manipulation of electron bunches has progressed over the last decade to a level where practical devices for THz guns, acceleration and a wide range of beam manipulations have become possible. Here, we present our progress on generation of single-cycle THz pulses at the two-hundred micro-Joule level to drive advanced acceleration and beam manipulation devices. Specifically, we use pulses centered at 0.3 THz to power a segmented terahertz electron accelerator and manipulator (STEAM) capable of performing multiple high-field operations on the 6D-phase-space of ultrashort electron bunches. Using this STEAM device, we demonstrate record THz-acceleration of >60 keV, streaking with <10 𝑓s resolution, focusing with >2 kT/m strength, compression to ~100 𝑓s as well as real-time switching between these modes of operation. The STEAM device demonstrates the feasibility of THz-based electron accelerators, manipulators and diagnostic tools enabling science beyond current resolution frontiers with transformative impact.

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Zhang, Ran, Xiaobing Zou, Xinlei Zhu, Shen Zhao, Haiyun Luo i Xinxin Wang. "X-Ray Emission From a Tabletop $X$-Pinch Device". IEEE Transactions on Plasma Science 40, nr 12 (grudzień 2012): 3354–59. http://dx.doi.org/10.1109/tps.2012.2207919.

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Teng Yuepeng, 滕玥鹏, 孙天希 Sun Tianxi, 刘志国 Liu Zhiguo, 罗萍 Luo Ping, 潘秋丽 Pan Qiuli i 丁训良 Ding Xunliang. "New Type Monocapillary X-Ray Optical Device". Acta Optica Sinica 30, nr 2 (2010): 542–45. http://dx.doi.org/10.3788/aos20103002.0542.

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Liu Duo, 刘舵, 强鹏飞 Qiang Pengfei, 李林森 Li Linsen, 刘哲 Liu Zhe, 盛立志 Sheng Lizhi, 刘永安 Liu Yong′an i 赵宝升 Zhao Baosheng. "Multilayer Nested X-Ray Focusing Optical Device". Acta Optica Sinica 36, nr 8 (2016): 0834002. http://dx.doi.org/10.3788/aos201636.0834002.

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Rozprawy doktorskie na temat "X-RAY DEVICE"

Hill, Joanne E. "The charge coupled device as an X-Ray polarimeter". Thesis, University of Leicester, 1999. http://hdl.handle.net/2381/30620.

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New results of X-ray polarisation detection efficiencies are presented for two small pixel devices. EEV Ltd. have designed the first CCD X-ray polarimeter with an improved deep depletion layer of 80 urn, to maximise the device quantum efficiency at energies above 1 keV. A novel design concept has been utilised to minimise the pixel dimension whilst maximising production, the CCD has 4x9 um2 pixels. This device was tested and has been shown to be greater than a factor of two more efficient for polarisation measurements above 10 keV, than previously tested CCDs. The first successful measurements below 10 keV show a 5 - 10 % polarisation detection efficiency (modulation factor, M(E)), a significant result, due to X-ray optics having greater effective area below 10 keV. The smallest pixel CCD to date, with 2.4 um2 pixels, designed for optical purposes by Philips Ltd., is shown to have 26.2 % modulation at 10 keV. From the analysis of the data from these devices it has been recognised that charge diffusion, and thus the depletion depth, has a significant effect on the polarisation measurements. A model has been written to simulate polarised X-ray interactions in CCDs, and is shown to successfully model thinly depleted devices (Kodak KAF1400), in terms of polarisation detection efficiency. Further improvements have been identified to provide an accurate model for deeply depleted devices, in order to create a tool for optimising future CCD polarimeters. The modulation factors, M(E), for a 0.5 um2 pixel CCD have been estimated using the model, and it has been shown that a device of this type would provide a further factor of 2 improvement in M(E), with a significant measurement as low as 5 keV. The feasibility of a future mission including a CCD X-ray polarimeter has been investigated in detail, in terms of current and future technology. The XMM and the XEUS optics are considered in conjunction with both the EEV polarimeter and the modelled 0.5 urn2 pixel CCD. Two types of Astronomical sources are taken into account over a 5 - 20 keV energy range: bright galactic objects, e.g. The Crab Nebula faint extragalactic objects e.g. Active Galactic Nuclei (AGN). Using the XEUS optics, a 25 m focal length and an effective area maximised to 1 m2 at 1 keV yields observation times of less than 105 sees for a Crab measurement (polarisation 10 - 20 %, below 12.5 keV) and of the order 104 sees or less using a 0.5 urn2 pixel CCD. For measurements of the more faint AGN (polarisation 10 - 20 %) observation times are of the order 106 sees or below for the EEV CCD (7.5 - 10 keV) and the 0.5 um2 device (5 - 12.5 keV). Employing the XEUS optics for the measurement of the polarisation of AGN requires no further technological advancement if the EEV polarimeter is utilised, and the production of a 0.5 um2 pixel CCD is said to be within easy reach according to manufacturers.

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Bray, Terry Lee. "A novel device for growing protein crystals : computer control and automation". Thesis, Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/30428.

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Carter, David John Donat 1966. "Sub-50nm x-ray lithography with application to a coupled quantum dot device". Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50037.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
Includes bibliographical references (p. 214-231).
by David John Donat Carter.
Ph.D.

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Poust, Benjamin David. "X-ray scatter based metrologies for the development of metamorphic semiconductor device structures". Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1320974691&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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Mahadik, Nadeemullah A. "Non-destructive x-ray characterization of wide-bandgap semiconductor materials and device structures". Fairfax, VA : George Mason University, 2008. http://hdl.handle.net/1920/3404.

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Thesis (Ph.D.)--George Mason University, 2008.
Vita: p. 104. Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Title from PDF t.p. (viewed Mar. 17, 2009). Includes bibliographical references (p. 99-103). Also issued in print.

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Swaminathan, S. "Characterisation of III-V quaternary multilayer semiconductor device materials by X-ray diffraction". Thesis, University of Warwick, 1985. http://wrap.warwick.ac.uk/110577/.

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Optoelectronic devices find extensive use in optical fibre communication systems as infrared sources, in view of a relatively low attenuation of the optical fibres for such sources in the spectral range 1.0 - 1.4 pm. In the study of optoelectronic device materials, minute variations in the lattice parameter of different layers cause lattice strain, which, along with other factors namely thermal gradients, a high density of recombining carriers in the active layer promote the motion, multiplication and growth of defects into network clusters. In this thesis a double crystal plane wave synchrotron radiation technique has been found to be capable of accurately characterizing individual layers in a multilayer structure such as in an optoelectronic device consisting of many layers of InGaAs, InGaAsP and InP grown over an InP substrate. This non-destructive method can separate images of the ternary and quaternary layers from the substrate (InP) thereby identifying the location of any defects as well as detailed identification of dislocation-type defects. The observed presence of a cross hatch pattern of interfacial misfit dislocations has been strongly correlated to the degradation of the device. The technique also enables a very precise plot of the rocking curves which provides invaluable information about the assessment of the thickness, compositional variation in the ternary or quaternary epitaxial layers and also of their crystalline perfection. The technique is capable of mapping lattice parameter differences of the order of 10-8. A fairly accurate assessment of the inhomogeneity and non-uniformity of quaternary multilayers grown by liquid phase epitaxy has been made by this technique. About 54Z variations in the total quaternary layer thickness was observed for a double heterostructure laser and about 39Z for a thick graded single layer quaternary specimen. For multilayer structures showing complicated rocking curves, it has been demonstrated that a selective etching of the layers in sequence helps identify the individual layer characteristics. A theoretical calculation of rocking curves from heteroepitaxial layers is presented. Initial data from experimental rocking curves are used to calculate rocking curves for the multilayer structure and then compared with experimental curves. The input data are slightly adjusted about their initial values until a reasonable fit with experimental curves is achieved. The initial data consist of the knowledge of the thickness and mismatch variations of each layer in the multilayer structure. The mismatch variations for the layers as obtained by selective etching have been effectively used to simulate experimental rocking curves. An accurate interpretation of layer characteristics from such a simulated fit has thus been made possible. Simulation studies have thus been found to offer a powerful and nondestructive method of a detailed and accurate assessment of layer thickness and compositional variations by comparison with experimental rocking curves. Studies on a number of specimens have shown satisfactory agreement: the predicted thicknesses have been found to be generally of the same order as reported by Plessey, Caswell, where the devices were grown, and in cases where the data were either disputed or not available, experimental verification of the layer thickness made by selective etching, was found to be in agreement with the thickness predicted by the simulated studies.

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Ozkan, Cigdem. "The Controlled Drift Detector As An X-ray Imaging Device For Diffraction Enhanced Imaging". Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/2/12610414/index.pdf.

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Diffraction Enhanced Imaging (DEI) is an X-ray imaging technique providing specific information about the molecular structure of a tissue by means of coherently scattered photons. A Controlled Drift Detector (CDD) is a novel 2D silicon imager developed to be used in X-ray imaging techniques. In this work a final (complete and detailed) analysis of DEI data taken with the CDD in the ELETTRA synchrotron light source facility in Trieste (Italy) in 2005, is presented and the applicability of both this new technique and the novel detector are discussed.

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Pym, Alexander Thomas Gafswood. "Grazing incidence X-Ray scattering from the interfaces of thin film magnetic device materials". Thesis, Durham University, 2008. http://etheses.dur.ac.uk/2317/.

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Thin film devices have found many applications in recently developed technology. With the need to increase data storage capacity and performance there are ever more demanding requirements of these devices. Gaining an understanding at the atomic scale of the growth and subsequent manufacturing treatments is fundamental to improving the device design. Grazing incidence x-ray scattering techniques have been used to study the interfaces in a sequence of samples, starting with repeated bi layers of single element material and sequentially working up to a realistic Magnetic Tunnnel junction (MTJ) structure. The width of the diffuse Bragg sheet from repeated bi-layers of Co/Pd and Co/Ru shows that the correlation length of the out-of-plane toughness is shorter for higher frequency roughness components than longer wavelength features. Scaling behaviour in the intensity profile demonstrates that the interfaces become more two-dimensional as more layers are deposited Reflectivity measurements with in-situ annealing reveal that the interfaces in CoFe/Ru repeated bi-layers are stable with temperature. The interfaces of amorphous CoFeB with ruthenium are also stable until the CoFeB crystallises. Similar measurements on repeated bi-layers of CoFeB/AlO, show sharpening of the interface during annealing. The diffuse scatter shows this to be a reduction in the intetdiffusion of the interface and not a change in topological roughness. The scatter from a single CoFeB/A10, interface on a realistic MTJ sub-structure also shows changes with annealing which are consistent with interface sharpening. This sharpening is matched to enhancements in the tunnel magneto- resistance of the MTJ. The changes occurring cannot be explained solely by sharpening of this particular interface and more sophisticated modelling has been attempted to identify the changes. Simulations show that changes in the manganese profile from an IrMn pinning layer in the MTJ should result in a significant change in the variable energy reflectivity recorded at a constant scattering vector.

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Kang, Jun. "Thin film CdTe as high energy x-ray detector material for medical applications". Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1228060515.

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Gow, Jason Peter David. "Radiation damage analysis of the swept charge device for the C1XS instrument". Thesis, Brunel University, 2010. http://bura.brunel.ac.uk/handle/2438/4311.

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This thesis is concerned with ensuring high energy resolution from the swept charge device (SCD) CCD54, essentially a non-pixellated version of the charge coupled device (CCD), for use in the Chandrayaan-1 X-ray Spectrometer (C1XS). Of particular interest is the effect on performance due to the radiation damage, caused by protons, the CCD54s used in C1XS will receive during the transfer to the Moon and during the two years in lunar orbit. Chapter 2 reviews the atomic structure, the formation and detection of X-rays, and the operation of a CCD. Chapter 3 discusses the space radiation environment and the damaging effects it has on CCDs, for example increasing dark current and charge transfer inefficiency. Chapter 4 presents the basic laboratory equipment and procedure used during the experimental work, and details the initial optimisation and characterisation, the pre-flight characterisation of devices available for use in C1XS, the measurement of the depletion depth, and quantum efficiency of the CCD54. Chapter 5 details the results of the initial proton irradiation study, intended to demonstrate the ability of the CCD54 to provide excellent scientific data over the two years at the Moon. Chapter 6 describes a second irradiation study covering a more detailed investigation of the damage effects, investigating dark current, trap energy levels, and charge transfer inefficiency. Chapter 7 describes work conducted to assist the C1XS science team in the development of an X-ray fluorescence model, to be used with X-ray spectra provided by the X-ray solar monitor and the spectra detected by C1XS, to provide elemental abundance information of the lunar surface. It also presents the initial C1XS results from the Moon, and a brief comparison of the CCD54 with other semiconductor X-ray fluorescence detectors. Chapter 8 describes the final conclusions and recommendations for further work, including a study of the radiation damage effects during the two years at the Moon and the future development of SCD detectors for use in space.

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Książki na temat "X-RAY DEVICE"

S, Swaminathan. Characterisation of III-V quaternary multilayer semiconductor device materials by x-ray diffraction. [s.l.]: typescript, 1985.

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McGovern, Mark Edward. Monolayer chemistry - interaction of OTS with quartz/glass surfaces in various solvents probed by x-ray photoelectron spectroscopy and surface acoustic wave device. Ottawa: National Library of Canada, 1993.

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M, Ceglio Natale, Dhez Pierre, Society of Photo-optical Instrumentation Engineers. i University of Alabama in Huntsville. Center for Applied Optics., red. Multilayer structures and laboratory X-ray laser research: 19-20 August 1986, San Diego, California. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1987.

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United States. National Aeronautics and Space Administration., red. Modifications developed to improve X-ray detection devices. [Washington, D.C: National Aeronautics and Space Administration, 1994.

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Starr, Richard. Annual report for Catholic University co-operative agreement NCC-5-83, 1 April 1997 through 31 March 1998. [Washington, DC: National Aeronautics and Space Administration, 1998.

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F, Marshall Gerald, i Society of Photo-optical Instrumentation Engineers., red. Applications of thin-film multilayered structures to figured X-ray optics: August 20-22, 1985, San Diego, California. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1985.

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Franz, Rosenberger, i United States. National Aeronautics and Space Administration., red. X-ray transmission microscope development: Third semi-annual progress report, NASA contract NAS8-40185. Huntsville, AL: Center for Microgravity and Materials Research, The University of Alabama in Huntsville, 1995.

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Center, Goddard Space Flight, red. Evaluation of a procedure for the measurement of thin film thickness by X-ray reflectivity. Greenbelt, Md: National Aeronautics and Space Administration, Goddard Space Flight Center, 1997.

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Części książek na temat "X-RAY DEVICE"

Aoki, Toru, Katsuyuki Takagi, Hiroki Kase i Akifumi Koike. "X-Ray Semiconductor Imaging Device Technology and Medical-Imaging Application". W Biomedical Engineering, 279–96. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003141945-14.

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Fiedorova, Klara, Martin Augustynek, Jan Kubicek, Marek Penhaker, Andrea Vodakova i Karol Korhelik. "Modeling and Objectification of Skiagraphy Image Quality Deterioration Caused by X-Ray Secondary Irradiation on Mobile X-Ray Device". W IFMBE Proceedings, 1599–608. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31635-8_197.

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Lee, S. G., J. G. Bak i M. Bitter. "A Vacuum X-Ray Crystal Spectrometer for the Hanbit Magnetic Mirror Device". W Advanced Diagnostics for Magnetic and Inertial Fusion, 241–44. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4419-8696-2_43.

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Siddiqui, Rafay Mehmood, Inam Ul Ahad, Samreen Amir, Bassim Aklan i Tahir Uddin. "X-Ray IO Monitor Device for Primary Intensity Measurement in Computed Tomography (CT) Scanner". W IFMBE Proceedings, 33–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-32183-2_9.

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Kim, Young-Pyo, Tae-Gon Kim, Yong-Pil Park, Min-Woo Cheon i Yang-Sun Lee. "The Study on the Mobile Diagnostic X-ray Device of Frequency Modulation Method by PI Controlled". W Lecture Notes in Electrical Engineering, 249–58. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-4516-2_25.

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Siddiqui, Rafay Mehmood, Inam Ul Ahad, Syedah Sadaf Zehra i Anurag. "Characterization of X-Ray Sensors and Io Monitor Device Testing for Primary and Secondary Intensities Measurement". W IFMBE Proceedings, 37–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-32183-2_10.

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Dudley, M., X. Huang i W. M. Vetter. "Synchrotron White Beam X-Ray Topography and High Resolution X-RayDiffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures". W Silicon Carbide, 629–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_26.

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Arney, David, Julian M. Goldman, Susan F. Whitehead i Insup Lee. "Improving Patient Safety with X-Ray and Anesthesia Machine Ventilator Synchronization: A Medical Device Interoperability Case Study". W Biomedical Engineering Systems and Technologies, 96–109. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11721-3_7.

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Hayashi, Makoto, i Shinobu Okido. "Application of X-Ray and Neutron Diffraction Methods to Reliability Evaluation of Structural Components and Electronic Device". W Materials Science Forum, 19–27. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-969-5.19.

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Kasap, Safa, i Zahangir Kabir. "X-Ray Detectors". W Springer Handbook of Semiconductor Devices, 747–76. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-79827-7_20.

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Streszczenia konferencji na temat "X-RAY DEVICE"

Lo, William, Puneet Gupta, Rakshith Venkatesh, Rudolf Schlangen, Howard Marks, Bruce Cory, Frances Su, Benjamin Stripe, Sylvia Lewis i Wenbing Yun. "X-Ray Device Alteration Using a Scanning X-Ray Microscope". W ISTFA 2022. ASM International, 2022. http://dx.doi.org/10.31399/asm.cp.istfa2022p0153.

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Abstract Near Infra-Red (NIR) techniques such as Laser Voltage Probing/Imaging (LVP/I), Dynamic Laser Stimulation (DLS), and Photon Emission Microscopy (PEM) are indispensable for Electrical Fault Isolation/Electrical Failure Analysis (EFI/EFA) of silicon Integrated Circuit (IC) devices. However, upcoming IC architectures based on Buried Power Rails (BPR) with Backside Power Delivery (BPD) networks will greatly reduce the usefulness of these techniques due to the presence of NIR-opaque layers that block access to the transistor active layer. Alternative techniques capable of penetrating these opaque layers are therefore of great interest. Recent developments in intense, focused X-ray microbeams for micro X-Ray Fluorescence (μXRF) microscopy open the possibility to using X-rays for targeted and intentional device alteration. In this paper, we will present results from our preliminary investigations into X-ray Device Alteration (XDA) of flip-chip packaged FinFET devices and discuss some implications of our findings for EFI/EFA.

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Whalen, Mallory, Ralf K. Heilmann i Mark L. Schattenburg. "Device for measuring stress stability in reflective coatings for thin-shell x-ray mirrors". W Optics for EUV, X-Ray, and Gamma-Ray Astronomy X, redaktorzy Giovanni Pareschi, Stephen L. O'Dell i Jessica A. Gaskin. SPIE, 2021. http://dx.doi.org/10.1117/12.2594627.

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Scherer, Brian, Sudeep Mandal, Joshua Salisbury, Peter Edic, Forrest Hopkins i Susanne M. Lee. "Towards brilliant, compact x-ray sources: a new x-ray photonic device". W SPIE Defense + Security, redaktorzy Amit Ashok, Edward D. Franco, Michael E. Gehm i Mark A. Neifeld. SPIE, 2017. http://dx.doi.org/10.1117/12.2266793.

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Aoki, Toru, Katsuyuki Takagi, Akifumi Koike i Keitaro Hitomi. "TlBr photon-counting imaging device (Conference Presentation)". W Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, redaktorzy Arnold Burger, Ralph B. James i Stephen A. Payne. SPIE, 2019. http://dx.doi.org/10.1117/12.2529746.

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Von Jackowski, Jeannette, Georg Schulz, Tino Töpper, Bekim Osmani i Bert Müller. "Three-dimensional characterization of soft silicone elements for intraoral device". W Developments in X-Ray Tomography XII, redaktorzy Bert Müller i Ge Wang. SPIE, 2019. http://dx.doi.org/10.1117/12.2529340.

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Schoonenberg, Gert A. F., Peter W. van den Houten, Raoul Florent, Pierre Lelong, John D. Carroll i Bart M. ter Haar Romeny. "Device enhancement using rotational x-ray angiography". W SPIE Medical Imaging, redaktorzy Josien P. W. Pluim i Benoit M. Dawant. SPIE, 2009. http://dx.doi.org/10.1117/12.812094.

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Aoki, Toru, Akifumi Koike, Takaharu Okunoyama, Hisashi Morii, Katsuyuki Takagi i Junichi Nishizawa. "CdTe imaging device driven by current integration mode (Conference Presentation)". W Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, redaktorzy Michael Fiederle, Arnold Burger, Larry Franks i Ralph B. James. SPIE, 2016. http://dx.doi.org/10.1117/12.2240381.

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Takeda, Eiji. "A Migration Path to Nano-Meter Lithography: From the viewpoint of VLSIs". W Soft X-Ray Projection Lithography. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/sxray.1993.tua.1.

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The "VLSI revolution" that is opening a new epoch in the electronics industry has made such remarkable progress that now 108 - 109 transistors can be fabricated on a single chip. VLSI microfabrication technologies are being pushed to new extremes by the DRAM community, thereby expediting research on 256 Mbit DRAMs using the 0.2 μm design rule. Giga-bit DRAMs and sophisticated ULSI processors using 0.1 μm Si-MOSFETs could possibly appear in the latter half of the 1990s. Recently, a very high speed ring oscillator has achieved 10 psec/gate for 77 K operation[1]. In the field of advanced bipolar transistors, a 64 GHz cut-off frequency has been reported[2]. These speeds are comparable to those of conventional quantum devices such as HEMTs (High electron mobility transistors)[3], JJs (Josephson junction devices)[4], and STrs (Superconducting transistors)[5] as shown in Fig. 1. In addition, device operation of 7-10 nm Si-MOSFETs (corresponding to 1-16 Tera-bit memories) [6] and single electron transistors (SET) [7] have been confirmed, which implies an increased importance for nano-meter fabrication technology. Si devices have a promising future, which will pave the way to the 21st century.

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Zhang, Ran, Xiaobing Zou, Xinlei Zhu, Shen Zhao, Haiyun Luo i Xinxin Wang. "X-ray emission from a table-top X-pinch device". W 2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC). IEEE, 2012. http://dx.doi.org/10.1109/ipmhvc.2012.6518700.

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McNulty, Ian. "Low-noise charge-coupled device camera for soft-x-ray imaging". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.mmm4.

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We have developed an inexpensive, low-noise, high-resolution charge-coupled device (CCD) camera for imaging applications in the soft-x-ray region. It is capable of photon counting, and because it is cryogenically cooled, it can achieve integration times of several hours. A P31 phosphor coating on the CCD active surface downconverts incident x-rays with high efficiency and no loss in spatial resolution. The aluminum camera body is kept under moderate vacuum (1–10 mTorr) by a sorption pump for thermal insulation and unimpeded propagation of x rays to the detector plane. An aluminum coated Si3N4 entrance window delivers acceptable throughput down to 200 eV x-ray energies and effectively blocks external visible-light sources. The internal 0.8 L liquid-nitrogen Dewar flask maintains the detector substrate at –125°C by means of a flexible copper cold finger for ~10 h under ambient conditions. A slow-scan CCD sequencing and sampling circuit based on a CAMAC system provides standard image erasure, integration, and readout functions under computer control. Data-acquisition software permits convenient user manipulation of camera operating parameters as well as on-line image display. Our characterization of the CCD camera with 350 eV x-rays indicates good performance at 1 photon/pixel•s rates.

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Raporty organizacyjne na temat "X-RAY DEVICE"

Waymel, Robert, Enrico Quintana, Phillip Reu, Kyle Thompson, Andrew Lentfer, Gabriella Dalton i Thomas Martinez. X-ray image acquisition of a device undergoing pyroshock. Office of Scientific and Technical Information (OSTI), wrzesień 2021. http://dx.doi.org/10.2172/1821320.

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Johnson, Tony. An Energy Tunable X-ray Delay Device – Phase I CRADA No.: SLAC-261. Office of Scientific and Technical Information (OSTI), maj 2019. http://dx.doi.org/10.2172/1542937.

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Fry, David A. High Energy X-Ray System Specification for the Device Assembly Facility (DAF) at the NNSS. Office of Scientific and Technical Information (OSTI), sierpień 2012. http://dx.doi.org/10.2172/1048834.

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Bitter, M., D. Gates, D. Monticello, H. Neilson, A. Reiman, A. Roquemore, S. Morita, M. Goto, H. Yamada i J. Rice. Objectives and Layout of a High-Resolution X-ray Imaging Crystal Spectrometer for the Large Helical Device (LHD). Office of Scientific and Technical Information (OSTI), lipiec 2010. http://dx.doi.org/10.2172/984471.

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Bitter, M., D. Gates, H. Neilson, A. Reiman, A. Roquemore, S. Morita, M. Goto, H. Yamada i J. Rice. Design Parameters and Objectives of a High-�Resolution X-�ray Imaging Crystal Spectrometer for the Large Helical Device (LHD). Office of Scientific and Technical Information (OSTI), maj 2010. http://dx.doi.org/10.2172/981706.

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Pablant, N. A., L. Delgado-Apricio, M. Goto, K. W. Hill, S. Lzerson, S. Morita, A. L. Roquemore i in. Layout And Results From The Initial Operation Of The High-resolution X-ray Imaging Crystal Spectrometer On The Large Helical Device. Office of Scientific and Technical Information (OSTI), kwiecień 2012. http://dx.doi.org/10.2172/1063122.

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Mary, Brian J., i Charles H. Robinson. Technical Evaluation and Testing of Ruggedization of the CT Scanner. Development of a Sighting Device for the Hand-Held Dental X-Ray. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1992. http://dx.doi.org/10.21236/ada260147.

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Baral, Aniruddha, Jeffery Roesler i Junryu Fu. Early-age Properties of High-volume Fly Ash Concrete Mixes for Pavement: Volume 2. Illinois Center for Transportation, wrzesień 2021. http://dx.doi.org/10.36501/0197-9191/21-031.

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High-volume fly ash concrete (HVFAC) is more cost-efficient, sustainable, and durable than conventional concrete. This report presents a state-of-the-art review of HVFAC properties and different fly ash characterization methods. The main challenges identified for HVFAC for pavements are its early-age properties such as air entrainment, setting time, and strength gain, which are the focus of this research. Five fly ash sources in Illinois have been repeatedly characterized through x-ray diffraction, x-ray fluorescence, and laser diffraction over time. The fly ash oxide compositions from the same source but different quarterly samples were overall consistent with most variations observed in SO3 and MgO content. The minerals present in various fly ash sources were similar over multiple quarters, with the mineral content varying. The types of carbon present in the fly ash were also characterized through x-ray photoelectron spectroscopy, loss on ignition, and foam index tests. A new computer vision–based digital foam index test was developed to automatically capture and quantify a video of the foam layer for better operator and laboratory reliability. The heat of hydration and setting times of HVFAC mixes for different cement and fly ash sources as well as chemical admixtures were investigated using an isothermal calorimeter. Class C HVFAC mixes had a higher sulfate imbalance than Class F mixes. The addition of chemical admixtures (both PCE- and lignosulfonate-based) delayed the hydration, with the delay higher for the PCE-based admixture. Both micro- and nano-limestone replacement were successful in accelerating the setting times, with nano-limestone being more effective than micro-limestone. A field test section constructed of HVFAC showed the feasibility and importance of using the noncontact ultrasound device to measure the final setting time as well as determine the saw-cutting time. Moreover, field implementation of the maturity method based on wireless thermal sensors demonstrated its viability for early opening strength, and only a few sensors with pavement depth are needed to estimate the field maturity.

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Corriveau, Elizabeth, Ashley Mossell, Holly VerMeulen, Samuel Beal i Jay Clausen. The effectiveness of laser-induced breakdown spectroscopy (LIBS) as a quantitative tool for environmental characterization. Engineer Research and Development Center (U.S.), kwiecień 2021. http://dx.doi.org/10.21079/11681/40263.

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Laser-induced breakdown spectroscopy (LIBS) is a rapid, low-cost analytical method with potential applications for quantitative analysis of soils for heavy metal contaminants found in military ranges. The Department of Defense (DoD), Army, and Department of Homeland Security (DHS) have mission requirements to acquire the ability to detect and identify chemicals of concern in the field. The quantitative potential of a commercial off-the-shelf (COTS) hand-held LIBS device and a classic laboratory bench-top LIBS system was examined by measuring heavy metals (antimony, tungsten, iron, lead, and zinc) in soils from six military ranges. To ensure the accuracy of the quantified results, we also examined the soil samples using other hand-held and bench-top analytical methods, to include Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES) and X-Ray Fluorescence (XRF). The effects of soil heterogeneity on quantitative analysis were reviewed with hand-held and bench-top systems and compared multivariate and univariate calibration algorithms for heavy metal quantification. In addition, the influence of cold temperatures on signal intensity and resulting concentration were examined to further assess the viability of this technology in cold environments. Overall, the results indicate that additional work should be performed to enhance the ability of LIBS as a reliable quantitative analytical tool.

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Bengtsson, Johan. NSLS X-Ray Ring: Impact of Insertion Devices. Office of Scientific and Technical Information (OSTI), wrzesień 2007. http://dx.doi.org/10.2172/1525426.

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