Gotowa bibliografia na temat „VIA PECVD TECHNIQUE”

In this contribution an overview of hydrogenation issues for (multi-)crystalline silicon material is given. Crystalline silicon material for photovoltaic application contains more defects than material used for other semiconductor device fabrication. Therefore passivation of bulk defects has to be performed to reach higher efficiencies and exploit the cost reduction potential of these materials. Especially minority charge carrier lifetimes of ribbon silicon can be drastically improved by hydrogenation in combination with a gettering step. Apart from bulk passivation atomic hydrogen plays an important role in surface passivation via dielectric layers. Performance of single dielectric layers or stack systems can be increased after a hydrogenation step. It is believed that hydrogen can passivate defects at the silicon/dielectric interface allowing for lower surface recombination velocities. In industrial application hydrogenation is performed via deposition of a hydrogen-rich PECVD SiNx layer followed by a belt furnace annealing step. Surface passivation for characterization of charge carrier bulk lifetime is often performed with the same technique, omitting the annealing step to avoid in-diffusion of hydrogen. It is shown that for some crystalline silicon materials even the PECVD SiNx deposition alone (without annealing step) can cause significant bulk defect passivation, which in this case causes an unwanted change of bulk lifetime.

The pH sensor of an extended gate field effect transistor (EGFET) with gallium nitride/silicon hybrid nanostructure is fabricated and analyzed. Si nanowires (NWs) are fabricated via the Ag-assisted electroless etching technique and are then covered by GaN NWs through plasma-enhanced chemical vapor deposition (PECVD). The GaN nanostructure is synthesized by introducing gallium oxide (Ga2O3) and nitrogen (N2) for the growth of NWs. The GaN nanowires supply a larger surface area than that of the pristine Si NWs, where there is a better sensitivity for pH sensor. The GaN/Silicon hybrid sensors exhibit a sensitivity higher (50.4[Formula: see text]mV/pH) than that of pristine Si NWs sensors (41.2[Formula: see text]mV/pH). This GaN/Si hybrid pH sensor prepared by simple and low-cost method may be potentially applied for cheap biosensor devices.

We report for the first time a direct transmission electron microscope (TEM) imaging of a cross-section of a silicon nitride-based light emitting diode (LED), produced via a method patented by our research group. Grown by plasma enhanced chemical vapor deposition (PECVD) technique the LED structure (glass/Cr/p+-nc-Si:H/i-SiNx:H/n+-nc-Si:H/ITO) was then subjected to a high forward voltage stress for one time only, i.e. electroforming process. After electroforming the LED exhibited a boosted visible light emission and memory effect. To study the structural effect of the electroforming on the as-deposited LED the cross-section was extracted by focused ion beam (FIB) technique directly from the electroformed diode and thus prepared for TEM imaging. Since the electroforming process caused crystallization of ITO and its breakup in some parts of the diode surface, the FIB was conducted for the cross-section containing some regions with ITO layer and some without ITO. TEM examination revealed the nanocrystalline phase formation within the intrinsic layer (i-SiNx:H) caused by the electroforming process. The average size and distribution of Si nanocrystallites formed inside i-SiNx:H was determined. The Si nanocrystallization within i-SiNx:H was compared for the regions with and without ITO layer. The previously proposed model describing the changes taken place in the diode during electroforming process was reconsidered in the light of this TEM analysis.

The application of surface coatings is a popular technique to improve the performance of materials used for medical and dental implants. Ternary silicon carbon nitride (SiCN), obtained by introducing nitrogen into SiC, has attracted significant interest due to its potential advantages. This study investigated the properties of SiCN films deposited via PECVD for dental implant coatings. Chemical composition, optical, and tribological properties were analyzed by adjusting the gas flow rates of NH3, CH4, and SiH4. The results indicated that an increase in the NH3 flow rate led to higher deposition rates, scaling from 5.7 nm/min at an NH3 flow rate of 2 sccm to 7 nm/min at an NH3 flow rate of 8 sccm. Concurrently, the formation of N-Si bonds was observed. The films with a higher nitrogen content exhibited lower refractive indices, diminishing from 2.5 to 2.3 as the NH3 flow rate increased from 2 sccm to 8 sccm. The contact angle of SiCN films had minimal differences, while the corrosion rate was dependent on the pH of the environment. These findings contribute to a better understanding of the properties and potential applications of SiCN films for use in dental implants.

In this work, several ultrafiltration (UF) membranes with enhanced antifouling properties were fabricated using a rapid and green surface modification method that was based on the plasma-enhanced chemical vapor deposition (PECVD). Two types of hydrophilic monomers—acrylic acid (AA) and 2-hydroxyethyl methacrylate (HEMA) were, respectively, deposited on the surface of a commercial UF membrane and the effects of plasma deposition time (i.e., 15 s, 30 s, 60 s, and 90 s) on the surface properties of the membrane were investigated. The modified membranes were then subjected to filtration using 2000 mg/L pepsin and bovine serum albumin (BSA) solutions as feed. Microscopic and spectroscopic analyses confirmed the successful deposition of AA and HEMA on the membrane surface and the decrease in water contact angle with increasing plasma deposition time strongly indicated the increase in surface hydrophilicity due to the considerable enrichment of the hydrophilic segment of AA and HEMA on the membrane surface. However, a prolonged plasma deposition time (>15 s) should be avoided as it led to the formation of a thicker coating layer that significantly reduced the membrane pure water flux with no significant change in the solute rejection rate. Upon 15-s plasma deposition, the AA-modified membrane recorded the pepsin and BSA rejections of 83.9% and 97.5%, respectively, while the HEMA-modified membrane rejected at least 98.5% for both pepsin and BSA. Compared to the control membrane, the AA-modified and HEMA-modified membranes also showed a lower degree of flux decline and better flux recovery rate (>90%), suggesting that the membrane antifouling properties were improved and most of the fouling was reversible and could be removed via simple water cleaning process. We demonstrated in this work that the PECVD technique is a promising surface modification method that could be employed to rapidly improve membrane surface hydrophilicity (15 s) for the enhanced protein purification process without using any organic solvent during the plasma modification process.

Abstract As one of the key enabler of 3D integration, Through Silicon Via (TSV) was widely investigated but not largely adopted in the advanced packaging industry. At the present time, TSV key films, i.e. isolation, barrier and Cu seed layers, are depending on (Plasma Enhanced) Chemical Vapor Deposition ((PE)CVD) and Physical Vapor Deposition (PVD) systems in high volume manufacturing. Those deposition methods are not able to answer actual TSV needs: thick and conformal layers. They have forced engineers to compensate with other TSV fabrication steps while degrading fabrication cost. The innovative Fast Atomic Sequential Technology (F.A.S.T.®), a unique combination of optimized CVD reactor with Atomic Layer Deposition (ALD) pulsing capability, has been extensively evaluated to answer the thick and conformal layer request of TSV integration scheme while reducing integration cost. Based on commercially available molecules, actual isolation, copper barrier and Cu seed materials can be layered with advantageous conformality in TSV with aspect ratio up to 20:1. Furthermore, extended process window is at reach with the technique, thanks to additional parameters enabling fine tuning of the layer's properties to fit actual needs and future requirements. Assisted by plasma to deposit SiO2 liner, and TiN copper barrier, or combined with reducing gas for Cu seed deposition, highly conformal films compared to PVD or PECVD can be obtained while offering deposition rate much higher than PEALD. Additionally, a unique in-situ cleaning capability was also developed to remove deposition material from the reactor walls in the Cu Seed deposition chamber, thus answering the requirements of high volume manufacturing players.

A theoretical modelling for the catalyst-assisted growth of graphene sheet in the presence of plasma (Ar + H2 + C2H2) has been investigated. It is observed that the plasma composition can strongly affect the growth and field emission properties of graphene sheet. The effect of plasma compositions (i.e., different concentration of participating ions) on growth, structure and field emission properties Graphene sheet has been theoretically investigated. In plasma, two different kinds of positively charged ions with heavy (Acetylene, C2H2+) to light (Hydrogen, H+ ) ion, with neutral mass ratio of 13 are considered and the effect of the different fractional concentrations of participating ions on the growth and field emission properties of graphene is studied. Numerical calculations of the graphene sheet dimensions (height, thickness) for different fractional light ion concentrations have been carried out for the graphene growth via PECVD. It is found that on increasing fractional light ion concentration, the thickness and height of graphene sheet decreases and consequently the field emission factor for graphene sheet increases.

Aligning carbon nanotubes in any way desired is very important for many fundamental and applied research projects. In this talk, I will first discuss how to grow them with controlled diameter, length, spacing, and periodicity using catalyst prepared by magnetron sputtering, electron beam (e-beam) lithography, electrochemical deposition, and nanosphere self-assembly. Then I will present our results of field emission property of both the aligned carbon nanotubes grown on flat substrates and random carbon nanotubes grown on carbon cloth. For the aligned carbon nanotubes arrays, I will present the preliminary results of using them as photonic band gap crystals and nanoantennae. As an alternative material of carbon nanotubes, ZnO nanowires have been grown in both aligned fashion on flat substrates and random fashion on carbon cloth. Using these ZnO nanowires, good field emission properties were observed. Furthermore, I will present our recent studies on the electrical breakdown and transport properties of a single suspended nanotube grown on carbon cloth by a scanning electron microscope probe incorporated into a high resolution transmission electron microscope. As part of the potential applications, I will also discuss our recent success on molecules delivery into cells using carbon nanotubes. Finally I will talk about our most recent endeavor on achieving thermoelectric figure-of-merit (ZT) higher than 2 using our unique nanocomposite approach. Plasma-enhanced chemical vapor deposition (PECVD) was discovered by my group in 1998 to be able to grow aligned carbon nanotubes [1]. Catalyst film was first deposited by magnetron sputtering. According to the thickness of the catalytic film, aligned carbon nanotubes were grown with different diameters and spacing, and different length depending the growth time. However, the two major drawbacks are 1) that the location of where the nantoube grows can not be controlled, 2) that the spacing between the nanotubes can not be varied too much. Therefore, we immediately explored to grow aligned carbon nanotubes with the location and spacing controls using e-beam lithography [2]. Unfortunately the cost is so high that the e-beam is not suited for large scale commercialization that requires only an average site density control not the exactly location, for example, electron source. It is the cost issue that made us to develop electrochemical deposition to make catalyst dots that can be separated more than 10 micormeters between dots [3]. With such arrays, we tested many samples for field emission properties and found the optimal site density [4]. However, for applications that require the location controls, for example, photonic band gap crystals, electrochemical deposition can not be satisfactory. It is this kind of application that led us to develop the nanosphere self-assembly technique in large scale [5]. For field emission, we found that ZnO nanowires are good field emitters comparable to carbon nanotubes if they are grown with the right diameter and spacing. Here I will discuss the field emission properties of ZnO nanowires as an alternative material to carbon nanotubes [6]. Us a special kind of carbon nanotubes made by PECVD, we discovered a highly efficient molecular delivery technique, named nanotube spearing, based on the penetration of Ni-particle embedded nanotubes into cell membranes by magnetic field driving. DNA plasmids encoding the enhanced green fluorescent protein (EGFP) sequence were immobilized onto the nanotubes, and subsequently speared into targeted cells. We have achieved the unprecedented high transduction efficiency in Bal17 B-lymphoma, ex vivo B cells, and primary neurons with high viability. This technique may provide a powerful tool for high efficient gene transfer in a variety of cells, especially, the hard-to-transfect cells [7]. Conventional transport studies of multiwall carbon nanotubes (MWNTs) with only the outmost wall contacted to the electrodes via side-contact shows that a MWNT is a ballistic conductor with only the outmost wall carrying current. Here we show, by using end-contact in which every wall is contacted to the electrodes, that every wall is conducting, as evidenced by a significant amount of current drop when an innermost wall is broken at high-bias. Remarkably, the breakdown of each wall was initiated in the middle of the nanotube, not at the contacts, indicating diffusive electron transport. Using end-contact, we were able to probe the conductivity wall-by-wall and found that each wall is indeed either metallic, or semiconducting, or pseudogap-like. These findings not only reveal the intrinsic physical properties of MWNTs but also provide important guidance to MWNT-based electronic devices [8]. At the end of the talk, if time permits, I will talk about our ongoing effort on improving the figure-of-merit (ZT) of thermoelectric materials using a nanocomposite strategy to mimic the structure of the superlattice of PbTe/PbSe and Bi2Te3/Sb2Te3 hoping to reduce the thermal conductivity by a factor of 2–4 while maintaining the electrical conductivity. To make a close to 100% dense nanocomposite, we started with nanoparticles synthesis, then consolidation using both the traditional hot press and the direct current fast-heat, named plasma pressure compact, to preserve the nano size of the component particles. So far, we have seen thermal conductivity decrease by a factor of 2 in the systems of Si/Ge, PbeTe/PbSe, Bi2Te3/Sb2Te3, indicating the potential of improving ZT by a factor of 2.