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Artykuły w czasopismach na temat „Van der Waals Heterojunction”

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Data publikacji: 6 września 2023

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1

Lei, Xunyong. "Optimization of Mechanically Assembled Van Der Waals Heterostructure Based On Solution Immersion and Hot Plate Heating". Journal of Physics: Conference Series 2152, nr 1 (1.01.2022): 012007. http://dx.doi.org/10.1088/1742-6596/2152/1/012007.

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Abstract Layers of two-dimensional material are bonded together by van der Waals force, as a result, there is no need to take into consideration of the lattice mismatch in the formation of heterojunction, which is endowed with the characteristics of simple stacking in method, free of limitation to the type of materials and diverse changes. However, although the Van Der Waals heterojunction is relatively easy to stack, it is still difficult to generate inter-layer coupling between the thin crystal layers that form the Van Der Waals heterojunction. In most cases, the stacked heterojunction is simply stacked together without any new effects. Therefore, the realization of heterojunction coupling is a difficult problem to be considered in the process of preparing Van Der Waals heterojunction. In this paper, a method based on solution immersion and hot plate heating is proposed to optimize the mechanical stacking of Van Der Waals heterojunctions. It is found that the heterojunctions prepared by normal mechanical stacking method are usually uncoupled before treatment, but they can be stably coupled after treatment. Our method, simple, fast with low-cost, has been repeatedly verified to have a high success rate of coupling, which is suitable for most experimental groups to use and reproduce.

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2

Jiang, Xixi, Min Zhang, Liwei Liu, Xinyao Shi, Yafen Yang, Kai Zhang, Hao Zhu i in. "Multifunctional black phosphorus/MoS2 van der Waals heterojunction". Nanophotonics 9, nr 8 (18.02.2020): 2487–93. http://dx.doi.org/10.1515/nanoph-2019-0549.

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AbstractThe fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS2 heterojunctions have been used to build electronic devices with various functionalities. A p-n diode is achieved based on the vertically stacked BP/MoS2 heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS2 heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.

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3

Luo, Hao, Bolun Wang, Enze Wang, Xuewen Wang, Yufei Sun i Kai Liu. "High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions". Crystals 9, nr 6 (19.06.2019): 315. http://dx.doi.org/10.3390/cryst9060315.

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Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W−1, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 104 at zero bias, and the dark current is extremely low (~10−13 A). These MoTe2/MoSe2 type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.

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4

Kong, Xiangyuan, Longwen Cao, Yuxing Shi, Zhouze Chen, Weilong Shi i Xin Du. "Construction of S-Scheme 2D/2D Crystalline Carbon Nitride/BiOIO3 van der Waals Heterojunction for Boosted Photocatalytic Degradation of Antibiotics". Molecules 28, nr 13 (29.06.2023): 5098. http://dx.doi.org/10.3390/molecules28135098.

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Utilization of semiconductor photocatalyst materials to degrade pollutants for addressing environmental pollution problems has become a research focus in recent years. In this work, a 2D/2D S-scheme crystalline carbon nitride (CCN)/BiOIO3 (BOI) van der Waals heterojunction was successfully constructed for effectively enhancing the degradation efficiency of antibiotic contaminant. The as-synthesized optimal CCN/BOI-3 sample exhibited the highest efficiency of 80% for the photo-degradation of tetracycline (TC, 20 mg/L) after 120 min visible light irradiation, which was significantly higher than that of pure CCN and BOI. The significant improvement in photocatalytic performance is mainly attributed to two aspects: (i) the 2D/2D van der Waals heterojunction can accelerate interface carriers’ separation and transfer and afford sufficient active sites; (ii) the S-scheme heterojunction elevated the redox capacity of CCN/BOI, thus providing a driving force for the degradation reaction. The degradation pathways of TC for the CCN/BOI composite were investigated in detail by liquid chromatography-mass spectrometry (LC-MS) analysis. This work provides a design idea for the development of efficient photocatalysts based on the 2D/2D S-scheme van der Waals heterojunctions.

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5

Feng, Ya, Henan Li, Taiki Inoue, Shohei Chiashi, Slava V. Rotkin, Rong Xiang i Shigeo Maruyama. "One-Dimensional van der Waals Heterojunction Diode". ACS Nano 15, nr 3 (1.03.2021): 5600–5609. http://dx.doi.org/10.1021/acsnano.1c00657.

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6

Srivastava, Pawan Kumar, Yasir Hassan, Yisehak Gebredingle, Jaehyuck Jung, Byunggil Kang, Won Jong Yoo, Budhi Singh i Changgu Lee. "Multifunctional van der Waals Broken‐Gap Heterojunction". Small 15, nr 11 (7.02.2019): 1804885. http://dx.doi.org/10.1002/smll.201804885.

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7

Sun, Yinchang, Liming Xie, Zhao Ma, Ziyue Qian, Junyi Liao, Sabir Hussain, Hongjun Liu, Hailong Qiu, Juanxia Wu i Zhanggui Hu. "High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction". Nanomaterials 12, nr 3 (24.01.2022): 371. http://dx.doi.org/10.3390/nano12030371.

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Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS2 are fabricated, under the source-drain voltage of −1 V–1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 102, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA–VA group p-type layered semiconductors.

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8

Shi, Shun, Ya Feng, Bailing Li, Hongmei Zhang, Qiuqiu Li, Zhangxun Mo, Xinyun Zhou i in. "Broadband and high-performance SnS₂/FePS₃/graphene van der Waals heterojunction photodetector". Applied Physics Letters 120, nr 8 (21.02.2022): 081101. http://dx.doi.org/10.1063/5.0083272.

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Two-dimensional materials and their heterojunctions have received extensive attention in fundamental and applied research of photonics, electronics, and spintronics. Herein, we stacked SnS2, FePS3, and graphene (Gr) nanosheets into SnS2/FePS3/Gr van der Waals heterojunction, which exhibits broadband photoresponse from an ultraviolet region (405 nm) to an infrared region (850 nm) in atmosphere at room temperature. It was found that the dominated carrier of SnS2/FePS3 and SnS2/FePS3/Gr hererojunction was different in the electrical transport. The photoresponsivity of SnS2/FePS3/Gr heterojunction was about two orders of magnitude higher than that of SnS2 and FePS3 and SnS2/FePS3 heterojunction. The response time of SnS2/FePS3/Gr heterojunction was slightly shorter than that of SnS2/FePS3 heterojunction and two orders of magnitude shorter than that of SnS2 and FePS3 under the 450 nm laser. The high responsivity and short response time of SnS2/FePS3/Gr heterojunction should be attributed to the type II band alignment and short channel distance in the vertical direction where electrons and holes can be separated and transit fast. Our result offered an opportunity for realization of the high-performance and broadband photodetector.

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9

Fukai, Masaya, Noriyuki Urakami i Yoshio Hashimoto. "Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction". Coatings 11, nr 12 (2.12.2021): 1485. http://dx.doi.org/10.3390/coatings11121485.

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Ternary Ta2NiSe5 is a novel electronic material having the property of an excitonic insulator at room temperature. The electrical properties of Ta2NiSe5 have not been elucidated in detail. We discuss the electronic properties in Ta2NiSe5 films and the formation of heterojunctions. Hall effect measurements showed p-type conductivity. The activation energies estimated from the temperature dependence of the carrier concentration were seen to be 0.17 eV and 0.12 eV, at approximately 300 and 400 K, respectively. It was observed that carrier generation behavior changes at the critical temperature of the excitonic insulator state (328 K). The temperature dependence of the Hall mobility below the critical temperature nearly follows the bell-shaped curves for conventional semiconductor materials. A MoS2/Ta2NiSe5 van der Waals heterojunction was fabricated using the transfer method. Rectification characteristics, which depend on the gate bias voltage, were obtained. The barrier height at the MoS2/Ta2NiSe5 heterointerface and the on/off ratio could be modulated by applying a gate bias voltage, suggesting that the carrier transport was exhibited in band-to-band flow. Our demonstration suggests that the knowledge of Ta2NiSe5 increased as an electronic material, and diode performance was successfully achieved for the electronic device applications.

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10

Liu, B., X. X. Ren, Xian Zhang, Ping Li, Y. Dong i Zhi-Xin Guo. "Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions". Applied Physics Letters 122, nr 15 (10.04.2023): 152408. http://dx.doi.org/10.1063/5.0139076.

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Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, nonvolatile magnetic random access memories, and spin logics. Although MTJs composed of multilayer vdW magnetic homojunction have been extensively investigated, the ones composed of vdW magnetic heterojunction are still to be explored. Here, we use first-principles approaches to reveal that the magnetic heterojunction MTJs have much more distinguishable TMR values than the homojunction ones. In the MTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find there are eight stable magnetic states, leading to six distinguishable electronic resistances. As a result, five sizable TMRs larger than 300% can be obtained (the maximum TMR is up to 620 000%). Six distinguishable memories are obtained, which is two times larger than that of a four-layered homojunction MTJ. The underlying relationships among magnetic state, spin-polarized band structures, and transmission spectra are further revealed to explain the multiple TMR values. We also find that the magnetic states, and thus TMRs, can be efficiently modulated by an external electric field. This study opens an avenue to the design of high-performance MTJ devices based on vdW heterojunctions.

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11

Katerynchuk, V. M., O. S. Litvin, Z. R. Kudrynskyi, Z. D. Kovalyuk, I. G. Tkachuk i B. V. Kushnir. "Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe". Фізика і хімія твердого тіла 17, nr 4 (15.12.2016): 507–10. http://dx.doi.org/10.15330/pcss.17.4.507-510.

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We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.

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12

Lee, Tae-Ju, Tae-Seop Song i Tae-Yeon Seong. "Tunable Polarity in WSe2/TiS2 Van Der Waals Heterostructure". ECS Meeting Abstracts MA2022-01, nr 6 (7.07.2022): 2457. http://dx.doi.org/10.1149/ma2022-0162457mtgabs.

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Two-dimensional (2D) transition metal dichalcogenides (TMDs) formed layered van der Waals (vdW) crystals have emerged as promising candidates for varieties of potential applications, such as gas sensors, photodetectors, light-emitting diodes, Schottky diodes and memories, due to their unique physical features. However, since the existence of the metal-induced gap states (MIGS) at metal-semiconductor interfaces, it is severely difficult to adjust their electrical properties. It was demonstrated in previous researches that various metal contacts on TMDs semiconductor exhibit regular Schottky barrier height by Fermi-level pinning effect. In this study, we suggest the van der Waals material contact between TiS2 semimetal and WSe2 semiconductor for leading van der Waals gap at their interface. Through this approach, the TiS2/WSe2 2D heterojunction can efficiently address the MIGS. Interestingly, the TiS2/WSe2 heterojunction exhibits a novel electrical transport characteristics such as distinct ambipolar and rectifying behaviors by tuning drain voltage polarity. Firstly, under reverse bias (V ds < 0), TiS2/WSe2 heterojunction operates efficiently and allows transport of the carriers at both polarities of the gate voltage (V bg < 0 and V bg > 0), namely ambipolar behavior. Secondly, under the forward bias (V ds > 0), TiS2/WSe2 heterojunction does not allow transport of the electrons at positive gate voltage (V bg > 0), but allow transport of the holes at negative gate voltage (V bg < 0), namely p-type behavior. To understand the carrier transport mechanism of these results, ultra-violet photoelectron spectroscopy (UPS) measurements were also carried out on the WSe2 and TiS2 flakes. It is noted that the TiS2/WSe2 junction plays a crucial role in determining a novel electronic property of this device. Figure 1

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13

Wang, Qiang, Yan Liang, Hui Yao, Jianwei Li, Bin Wang i Jian Wang. "Emerging negative differential resistance effects and novel tunable electronic behaviors of the broken-gap KAgSe/SiC2 van der Waals heterojunction". Journal of Materials Chemistry C 8, nr 24 (2020): 8107–19. http://dx.doi.org/10.1039/d0tc02100h.

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14

Song, Aisheng, Lei Gao, Jie Zhang, Xiao Liu, Yuan-Zhong Hu, Tian-Bao Ma, Quanshui Zheng i Jianbin Luo. "Achieving a superlubricating ohmic sliding electrical contact via a 2D heterointerface: a computational investigation". Nanoscale 12, nr 14 (2020): 7857–63. http://dx.doi.org/10.1039/c9nr09662k.

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15

Zhu, Junqiang, Xiaofei Yue, Jiajun Chen, Jing Wang, Jing Wan, Wenzhong Bao, Laigui Hu, Ran Liu, Chunxiao Cong i Zhijun Qiu. "Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction". Applied Sciences 13, nr 10 (14.05.2023): 6024. http://dx.doi.org/10.3390/app13106024.

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Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe2/MoS2 van der Waals heterojunction. The laser treatment is used for p-doping WSe2 nanoflakes using high work function WOx. Then, an n-type MoS2 nanoflake is transferred onto the resulting p-doped WSe2 nanoflake. The built-in electric field of p-doped WSe2/MoS2 is stronger than that of pristine WSe2/MoS2. The p-n junction between p-doped WSe2 and MoS2 can separate more photogenerated electron–hole pairs and inject more electrons into MoS2 under laser illumination than pristine WSe2/MoS2. Thus, a high photoresponsivity (R) of ~1.28 × 105 A·W−1 and high specific detectivity (D*) of ~7.17 × 1013 Jones are achieved under the illumination of a 633 nm laser, which is approximately two orders higher than the best phototransistor based on a WSe2/MoS2 heterojunction. Our work provides an effective and simple method to enhance photoresponsivity and detectivity in two-dimensional (2D) heterojunction phototransistors, indicating the potential applications in fabricating high-performance photodetectors based on 2DLMs.

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Zheng, Shijun, Enxiu Wu, Zhihong Feng, Rao Zhang, Yuan Xie, Yuanyuan Yu, Rui Zhang i in. "Acoustically enhanced photodetection by a black phosphorus–MoS2 van der Waals heterojunction p–n diode". Nanoscale 10, nr 21 (2018): 10148–53. http://dx.doi.org/10.1039/c8nr02022a.

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Fan, Yong, Kun Li, Xingang Ren, Wenlong Yan, Cuijie Zhu, Yuanfang Zhao, Wei Zeng, Zhiliang Chen i Siliang Wang. "A highly selective gas sensor based on the WO₃/WS₂ van der Waals heterojunction for the 2-chloroethyl ethyl sulfide (2-CEES) sensing application". Journal of Materials Chemistry C 9, nr 48 (2021): 17496–503. http://dx.doi.org/10.1039/d1tc04678k.

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Yan, Jie, Yang Hao, Yutao Cui, Jiajia Zhang, Ye Zou, Weifeng Zhang, Gui Yu, Jian Zheng, Wei Xu i Daoben Zhu. "Ambipolar charge transport in an organic/inorganic van der Waals p–n heterojunction". Journal of Materials Chemistry C 6, nr 47 (2018): 12976–80. http://dx.doi.org/10.1039/c8tc03720e.

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Shang, Huiming, Hongyu Chen, Mingjin Dai, Yunxia Hu, Feng Gao, Huihui Yang, Bo Xu i in. "A mixed-dimensional 1D Se–2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors". Nanoscale Horizons 5, nr 3 (2020): 564–72. http://dx.doi.org/10.1039/c9nh00705a.

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Mixed-dimension van der Waals (vdW) p–n heterojunction photodiodes have inspired worldwide efforts to combine the excellent properties of 2D materials and traditional semiconductors without consideration of lattice mismatch.

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Tian, Xiaoyu, i Yushen Liu. "Van der Waals heterojunction ReSe2/WSe2 polarization-resolved photodetector". Journal of Semiconductors 42, nr 3 (1.03.2021): 032001. http://dx.doi.org/10.1088/1674-4926/42/3/032001.

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Dai, Jiayong, Jiaxin Chen, Jibin Song, Yinwen Ji, Yuan Qiu, Zhongzhu Hong, Honghai Song i in. "Photodynamic therapy: When van der Waals heterojunction meets tumor". Chemical Engineering Journal 421 (październik 2021): 129773. http://dx.doi.org/10.1016/j.cej.2021.129773.

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Chen, Peng, Ting Ting Zhang, Jing zhang, Jianyong Xiang, Hua Yu, Shuang Wu, Xiaobo Lu i in. "Gate tunable WSe2–BP van der Waals heterojunction devices". Nanoscale 8, nr 6 (2016): 3254–58. http://dx.doi.org/10.1039/c5nr09218c.

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Sangwan, Vinod K., Megan E. Beck, Alex Henning, Jiajia Luo, Hadallia Bergeron, Junmo Kang, Itamar Balla, Hadass Inbar, Lincoln J. Lauhon i Mark C. Hersam. "Self-Aligned van der Waals Heterojunction Diodes and Transistors". Nano Letters 18, nr 2 (5.02.2018): 1421–27. http://dx.doi.org/10.1021/acs.nanolett.7b05177.

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Chen, Yuxuan, Xinguo Ma, Di Li, Huihu Wang i Chuyun Huang. "Mechanism of enhancing visible-light photocatalytic activity of BiVO4via hybridization of graphene based on a first-principles study". RSC Advances 7, nr 8 (2017): 4395–401. http://dx.doi.org/10.1039/c6ra25721f.

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The interface properties of the hybrid graphene/BiVO₄(001) heterojunction were investigated by first-principle calculations incorporating semiempirical dispersion-correction schemes to describe correctly van der Waals interactions.

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Gao, Guoping, Yan Jiao, Fengxian Ma, Yalong Jiao, Eric Waclawik i Aijun Du. "Carbon nanodot decorated graphitic carbon nitride: new insights into the enhanced photocatalytic water splitting from ab initio studies". Physical Chemistry Chemical Physics 17, nr 46 (2015): 31140–44. http://dx.doi.org/10.1039/c5cp05512a.

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Density functional theory calculations reveal that hybrid carbon nanodots and graphitic carbon nitride can form a type-II van der Waals heterojunction, leading to significant reduction of band gap and enhanced visible light response.

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Liu, Bingtong, Jin Wang, Shuji Zhao, Cangyu Qu, Yuan Liu, Liran Ma, Zhihong Zhang, Kaihui Liu, Quanshui Zheng i Ming Ma. "Negative friction coefficient in microscale graphite/mica layered heterojunctions". Science Advances 6, nr 16 (kwiecień 2020): eaaz6787. http://dx.doi.org/10.1126/sciadv.aaz6787.

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The friction of a solid contact typically shows a positive dependence on normal load according to classic friction laws. A few exceptions were recently observed for nanoscale single-asperity contacts. Here, we report the experimental observation of negative friction coefficient in microscale monocrystalline heterojunctions at different temperatures. The results for the interface between graphite and muscovite mica heterojunction demonstrate a robust negative friction coefficient both in loading and unloading processes. Molecular dynamics simulations reveal that the underlying mechanism is a synergetic and nontrivial redistribution of water molecules at the interface, leading to larger density and more ordered structure of the confined subnanometer-thick water film. Our results are expected to be applicable to other hydrophilic van der Waals heterojunctions.

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Sun, Cuicui, i Meili Qi. "Hybrid van der Waals heterojunction based on two-dimensional materials". Journal of Physics: Conference Series 2109, nr 1 (1.11.2021): 012012. http://dx.doi.org/10.1088/1742-6596/2109/1/012012.

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Abstract Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices has been studied and represents a wider range of vdW heterostructures. New electronic devices and optoelectronic devices based on such heterojunctions have unique functions. Therefore, this article depicts the research progress of (2D+nD, where n is 0, 1 or 3) vdW heterojunctions based on 2D materials.

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Kong, Deqi, Tingting Lin, Jixing Chai, Zihe Zhu, Peixin Liu, Zhengliang Lin, Tingjun Lin i in. "A self-powered MXene/InGaN van der Waals heterojunction mini-photodetector for visible light communication". Applied Physics Letters 122, nr 14 (3.04.2023): 142104. http://dx.doi.org/10.1063/5.0138857.

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A van der Waals heterojunction-based photodetector has attracted significant interest due to its potential for high-speed visible light communication (VLC) application. Herein, we report a self-powered and high-performance MXene/InGaN van der Waals heterojunction visible light mini-photodetector (mini-PD). The combination of MXene and InGaN creates a Schottky junction that effectively separates the photoinduced electron/hole pairs, resulting in a robust heterojunction structure while enhancing carrier mobility and lifetime. The mini-PD exhibits the responsivity of 6.0 A/W, a specific detection rate of 9 × 1011 Jones, and rise/decay times of 7.1/183.2 μs under 470 nm blue light (36.5 μW/cm2) without bias voltage. The results show that MXene forms a robust type-II band arrangement with InGaN, which converts the optical signal into a large electrical signal and improves the stability of the mini-PD. This work provides a strategy for high-speed VLC without external energy input that has great potential for applications such as energy-efficient communication, sensor networks, and low-sensitivity detection.

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Furchi, Marco M., Andreas Pospischil, Florian Libisch, Joachim Burgdörfer i Thomas Mueller. "Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction". Nano Letters 14, nr 8 (28.07.2014): 4785–91. http://dx.doi.org/10.1021/nl501962c.

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He, Daowei, Yiming Pan, Haiyan Nan, Shuai Gu, Ziyi Yang, Bing Wu, Xiaoguang Luo i in. "A van der Waals pn heterojunction with organic/inorganic semiconductors". Applied Physics Letters 107, nr 18 (2.11.2015): 183103. http://dx.doi.org/10.1063/1.4935028.

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Shin, Gwang Hyuk, Cheolmin Park, Khang June Lee, Hyeok Jun Jin i Sung-Yool Choi. "Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction". Nano Letters 20, nr 8 (26.06.2020): 5741–48. http://dx.doi.org/10.1021/acs.nanolett.0c01460.

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Wang, Peng, Jie Meng, Jing Huang, Jia-jun Wang i Qun-xiang Li. "Phosphorene-based van der Waals heterojunction for solar water splitting". Chinese Journal of Chemical Physics 32, nr 4 (sierpień 2019): 431–36. http://dx.doi.org/10.1063/1674-0068/cjcp1811244.

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Yao, Jiadong, Wenxuan Guo, Yali Liu, Xinyue Niu, Mengge Li, Xiaoxiang Wu, Ying Yu, Tianjian Ou, Jian Sha i Yewu Wang. "Gate induced charge transfer and hysteresis enlargement in MoS2/GeSe2 vertical heterostructures". Journal of Materials Chemistry C 9, nr 26 (2021): 8213–19. http://dx.doi.org/10.1039/d1tc01824h.

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We explored the hysteresis enlargement in the vertical MoS₂/GeSe₂ van der Waals heterojunction, and it was attributed to the gate induced charge transfer process between the MoS₂ and GeSe₂ layers.

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Guan, Zhaoyong, Shuang Ni i Shuanglin Hu. "Band gap opening of graphene by forming a graphene/PtSe2 van der Waals heterojunction". RSC Advances 7, nr 72 (2017): 45393–99. http://dx.doi.org/10.1039/c7ra06865d.

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Li, Hong, Qida Wang, Peipei Xu i Jing Lu. "Van der waals BP/InSe heterojunction for tunneling field-effect transistors". Journal of Materials Science 56, nr 14 (4.02.2021): 8563–74. http://dx.doi.org/10.1007/s10853-021-05784-7.

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Deng, Yexin, Zhe Luo, Nathan J. Conrad, Han Liu, Yongji Gong, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Xianfan Xu i Peide D. Ye. "Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode". ACS Nano 8, nr 8 (17.07.2014): 8292–99. http://dx.doi.org/10.1021/nn5027388.

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Ren, Jialuo, Chunxiao Zhang, Chaoyu He, Tao Ouyang, Jin Li, Chao Tang i Jianxin Zhong. "Optoelectronic properties of type-II SePtTe/InS van der Waals heterojunction". Journal of Applied Physics 128, nr 4 (28.07.2020): 043103. http://dx.doi.org/10.1063/5.0007359.

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Li, Honglin, Yuting Cui, Haijun Luo, Tao Wang i Dongmei Li. "Tuneable Schottky barrier in van der Waals graphene-blue phosphorus heterojunction". Physica B: Condensed Matter 560 (maj 2019): 75–80. http://dx.doi.org/10.1016/j.physb.2019.02.027.

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Zhu, Zhiheng, Chunxiao Zhang, Mengshi Zhou, Chaoyu He, Jin Li, Tao Ouyang, Chao Tang i Jianxin Zhong. "Highly efficient water splitting in step-scheme PtS₂/GaSe van der Waals heterojunction". Journal of Applied Physics 132, nr 5 (7.08.2022): 055001. http://dx.doi.org/10.1063/5.0097163.

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Constructing junction architectures is one of the most promising strategies to improve the photocatalytic activity of two-dimensional semiconductors for the splitting of water. Using first-principles calculations, we demonstrate that the van der Waals heterojunction consisting of PtS2 and GaSe monolayers is a potential step-scheme photocatalyst with high solar-to-hydrogen (STH) efficiency. The stability of the heterojunction is confirmed by phonon dispersion spectrum calculation and ab initio molecular-dynamics simulation. In such a step-scheme heterojunction, GaSe serves as a reduction photocatalyst and PtS2 acts as an oxidation photocatalyst. The built-in electric field and band bending are formed since the work function difference and electrostatic potential difference promote the photo-generated electron (hole) to the conductance band minimum (valence band maximum) of GaSe (PtS2), inducing a step-scheme migrating route and guaranteeing strong redox ability of photo-generated carriers. The hydrogen evolution reduction can proceed driven solely by the photogenerated electrons, while the barrier of the oxygen evolution reaction is only 0.89 eV. More intriguingly, the STH efficiency is predicted up to 36.9% along with the improvement of visible light absorption. The STH efficiency can be enhanced effectively by both in-plane strain and compressive vertical strain. Our findings provide valuable guidance for the potential applications of PtS2/GaSe heterojunction as a photocatalyst for the photocatalytic splitting of water.

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Hosseini, Seyedali, Azam Iraji zad, Seyed Mohammad Mahdavi i Ali Esfandiar. "Tunable Gain SnS2/InSe Van der Waals Heterostructure Photodetector". Micromachines 13, nr 12 (25.11.2022): 2068. http://dx.doi.org/10.3390/mi13122068.

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Due to the favorable properties of two-dimensional materials such as SnS2, with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS2/InSe Van der Waals heterostructure photodetector. SnS2 crystals were synthesized by chemical vapor transport method and characterized using X-ray diffraction and Raman spectroscopy. The exfoliated SnS2 and InSe layers were transferred on the substrate. This photodetector presents photoresponsivity from 14 mA/W up to 740 mA/W and detectivity from 2.2 × 108 Jones up to 3.35 × 109 Jones by gate modulation from 0 V to +70 V. Light absorption and the charge carrier generation mechanism were studied by the Silvaco TCAD software and the results were confirmed by our experimental observations. The rather high responsivity and visible spectrum response makes the SnS2/InSe heterojunction a potential candidate for commercial visible image sensors.

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Yan, Y., Z. Zeng, M. Huang i P. Chen. "Van der waals heterojunctions for catalysis". Materials Today Advances 6 (czerwiec 2020): 100059. http://dx.doi.org/10.1016/j.mtadv.2020.100059.

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Xie, An, Yuxian Jian, Zichao Cheng, Yu Gu, Zhanyang Chen, Xiufeng Song i Zaixing Yang. "High responsivity of hybrid MoTe₂/perovskite heterojunction photodetectors". Journal of Physics: Condensed Matter 34, nr 15 (10.02.2022): 154007. http://dx.doi.org/10.1088/1361-648x/ac4f1b.

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Abstract Two-dimensional (2D) van der Waals heterojunction offers alternative facile platforms for many optoelectronic devices due to no-dangling bonds and steep interface carrier gradient. Here, we demonstrate a 2D heterojunction device, which combines the benefits of high carrier mobility of 2D MoTe2 and strong light absorption of perovskite, to achieve excellent responsivity. This device architecture is constructed based on the charge carriers separation and transfer with the high-gain photogating effect at the interface of the heterojunction. The device exhibits high responsivity of 334.6 A W−1, impressive detectivity of 6.2 × 1010 Jones. All the results provide the insight into the benefits of interfacial carriers transfer for designing hybrid perovskite-2D materials based optoelectronic devices.

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Yao, Jiandong, i Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection". Journal of Applied Physics 131, nr 16 (28.04.2022): 161101. http://dx.doi.org/10.1063/5.0087503.

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Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.

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44

Yao, Jiandong, i Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection". Journal of Applied Physics 131, nr 16 (28.04.2022): 161101. http://dx.doi.org/10.1063/5.0087503.

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Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.

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Lin, Zhitao, Wenbiao Zhu, Yonghong Zeng, Yiqing Shu, Haiguo Hu, Weicheng Chen i Jianqing Li. "Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe2/MoTe2 van der Waals Heterostructure". Nanomaterials 12, nr 15 (3.08.2022): 2664. http://dx.doi.org/10.3390/nano12152664.

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Type II vertical heterojunction is a good solution for long-wavelength light detection. Here, we report a rhenium selenide/molybdenum telluride (n-ReSe2/p-MoTe2) photodetector for high-performance photodetection in the broadband spectral range of 405–2000 nm. Due to the low Schottky barrier contact of the ReSe2/MoTe2 heterojunction, the rectification ratio (RR) of ~102 at ±5 V is realized. Besides, the photodetector can obtain maximum responsivity (R = 1.05 A/W) and specific detectivity (D* = 6.66 × 1011 Jones) under the illumination of 655 nm incident light. When the incident wavelength is 1550–2000 nm, a photocurrent is generated due to the interlayer transition of carriers. This compact system can provide an opportunity to realize broadband infrared photodetection.

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Zhang, Zhihui, Zifeng Xie, Jian Liu, Ye Tian, Yan Zhang, Xing Wei, Tingting Guo i in. "Band alignment control in a blue phosphorus/C2N van der Waals heterojunction using an electric field". Physical Chemistry Chemical Physics 22, nr 10 (2020): 5873–81. http://dx.doi.org/10.1039/c9cp06696a.

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Sun, Yibo, Shuiyuan Wang, Senfeng Zeng, Xiaohe Huang i Peng Zhou. "Versatile Logic and Nonvolatile Memory Based on a van der Waals Heterojunction". ACS Applied Electronic Materials 3, nr 7 (30.06.2021): 3079–84. http://dx.doi.org/10.1021/acsaelm.1c00308.

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Xiao, Junting, Jinxin Liu, Kuanglv Sun, Yuan Zhao, Ziyi Shao, Xiaoliang Liu, Yongbo Yuan i in. "PbI2–MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment". Journal of Physical Chemistry Letters 10, nr 15 (11.07.2019): 4203–8. http://dx.doi.org/10.1021/acs.jpclett.9b01665.

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Lan, Changyong, Chun Li, Shuai Wang, Tianying He, Tianpeng Jiao, Dapeng Wei, Wenkui Jing, Luying Li i Yong Liu. "Zener Tunneling and Photoresponse of a WS2/Si van der Waals Heterojunction". ACS Applied Materials & Interfaces 8, nr 28 (7.07.2016): 18375–82. http://dx.doi.org/10.1021/acsami.6b05109.

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Li, Jun, Baojing Huang, Qiang Guo, Sheng Guo, Zhikun Peng, Jin Liu, Qingyong Tian i in. "Van der Waals heterojunction for selective visible-light-driven photocatalytic CO2 reduction". Applied Catalysis B: Environmental 284 (maj 2021): 119733. http://dx.doi.org/10.1016/j.apcatb.2020.119733.

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