Gotowe bibliografie tematyczne / Van der Waals Heterojunction

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Gotowa bibliografia na temat „Van der Waals Heterojunction”

Autor: Grafiati
Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Van der Waals Heterojunction"

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Lei, Xunyong. "Optimization of Mechanically Assembled Van Der Waals Heterostructure Based On Solution Immersion and Hot Plate Heating". Journal of Physics: Conference Series 2152, nr 1 (1.01.2022): 012007. http://dx.doi.org/10.1088/1742-6596/2152/1/012007.

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Abstract Layers of two-dimensional material are bonded together by van der Waals force, as a result, there is no need to take into consideration of the lattice mismatch in the formation of heterojunction, which is endowed with the characteristics of simple stacking in method, free of limitation to the type of materials and diverse changes. However, although the Van Der Waals heterojunction is relatively easy to stack, it is still difficult to generate inter-layer coupling between the thin crystal layers that form the Van Der Waals heterojunction. In most cases, the stacked heterojunction is simply stacked together without any new effects. Therefore, the realization of heterojunction coupling is a difficult problem to be considered in the process of preparing Van Der Waals heterojunction. In this paper, a method based on solution immersion and hot plate heating is proposed to optimize the mechanical stacking of Van Der Waals heterojunctions. It is found that the heterojunctions prepared by normal mechanical stacking method are usually uncoupled before treatment, but they can be stably coupled after treatment. Our method, simple, fast with low-cost, has been repeatedly verified to have a high success rate of coupling, which is suitable for most experimental groups to use and reproduce.
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Jiang, Xixi, Min Zhang, Liwei Liu, Xinyao Shi, Yafen Yang, Kai Zhang, Hao Zhu i in. "Multifunctional black phosphorus/MoS2 van der Waals heterojunction". Nanophotonics 9, nr 8 (18.02.2020): 2487–93. http://dx.doi.org/10.1515/nanoph-2019-0549.

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AbstractThe fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS2 heterojunctions have been used to build electronic devices with various functionalities. A p-n diode is achieved based on the vertically stacked BP/MoS2 heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS2 heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.
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Luo, Hao, Bolun Wang, Enze Wang, Xuewen Wang, Yufei Sun i Kai Liu. "High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions". Crystals 9, nr 6 (19.06.2019): 315. http://dx.doi.org/10.3390/cryst9060315.

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Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered photovoltaic photodetector exhibits an excellent responsivity of 1.5 A W−1, larger than previously reported TMDs-based photovoltaic photodetectors. Due to the high-efficiency separation of electron-hole pairs and ultrafast charge transfer, the light-induced on/off ratio of current switching is larger than 104 at zero bias, and the dark current is extremely low (~10−13 A). These MoTe2/MoSe2 type-II heterojunctions are expected to provide more opportunities for future nanoscale optoelectronic devices.
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Kong, Xiangyuan, Longwen Cao, Yuxing Shi, Zhouze Chen, Weilong Shi i Xin Du. "Construction of S-Scheme 2D/2D Crystalline Carbon Nitride/BiOIO3 van der Waals Heterojunction for Boosted Photocatalytic Degradation of Antibiotics". Molecules 28, nr 13 (29.06.2023): 5098. http://dx.doi.org/10.3390/molecules28135098.

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Utilization of semiconductor photocatalyst materials to degrade pollutants for addressing environmental pollution problems has become a research focus in recent years. In this work, a 2D/2D S-scheme crystalline carbon nitride (CCN)/BiOIO3 (BOI) van der Waals heterojunction was successfully constructed for effectively enhancing the degradation efficiency of antibiotic contaminant. The as-synthesized optimal CCN/BOI-3 sample exhibited the highest efficiency of 80% for the photo-degradation of tetracycline (TC, 20 mg/L) after 120 min visible light irradiation, which was significantly higher than that of pure CCN and BOI. The significant improvement in photocatalytic performance is mainly attributed to two aspects: (i) the 2D/2D van der Waals heterojunction can accelerate interface carriers’ separation and transfer and afford sufficient active sites; (ii) the S-scheme heterojunction elevated the redox capacity of CCN/BOI, thus providing a driving force for the degradation reaction. The degradation pathways of TC for the CCN/BOI composite were investigated in detail by liquid chromatography-mass spectrometry (LC-MS) analysis. This work provides a design idea for the development of efficient photocatalysts based on the 2D/2D S-scheme van der Waals heterojunctions.
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Feng, Ya, Henan Li, Taiki Inoue, Shohei Chiashi, Slava V. Rotkin, Rong Xiang i Shigeo Maruyama. "One-Dimensional van der Waals Heterojunction Diode". ACS Nano 15, nr 3 (1.03.2021): 5600–5609. http://dx.doi.org/10.1021/acsnano.1c00657.

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Srivastava, Pawan Kumar, Yasir Hassan, Yisehak Gebredingle, Jaehyuck Jung, Byunggil Kang, Won Jong Yoo, Budhi Singh i Changgu Lee. "Multifunctional van der Waals Broken‐Gap Heterojunction". Small 15, nr 11 (7.02.2019): 1804885. http://dx.doi.org/10.1002/smll.201804885.

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Sun, Yinchang, Liming Xie, Zhao Ma, Ziyue Qian, Junyi Liao, Sabir Hussain, Hongjun Liu, Hailong Qiu, Juanxia Wu i Zhanggui Hu. "High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction". Nanomaterials 12, nr 3 (24.01.2022): 371. http://dx.doi.org/10.3390/nano12030371.

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Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS2 are fabricated, under the source-drain voltage of −1 V–1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 102, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA–VA group p-type layered semiconductors.
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Shi, Shun, Ya Feng, Bailing Li, Hongmei Zhang, Qiuqiu Li, Zhangxun Mo, Xinyun Zhou i in. "Broadband and high-performance SnS2/FePS3/graphene van der Waals heterojunction photodetector". Applied Physics Letters 120, nr 8 (21.02.2022): 081101. http://dx.doi.org/10.1063/5.0083272.

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Two-dimensional materials and their heterojunctions have received extensive attention in fundamental and applied research of photonics, electronics, and spintronics. Herein, we stacked SnS2, FePS3, and graphene (Gr) nanosheets into SnS2/FePS3/Gr van der Waals heterojunction, which exhibits broadband photoresponse from an ultraviolet region (405 nm) to an infrared region (850 nm) in atmosphere at room temperature. It was found that the dominated carrier of SnS2/FePS3 and SnS2/FePS3/Gr hererojunction was different in the electrical transport. The photoresponsivity of SnS2/FePS3/Gr heterojunction was about two orders of magnitude higher than that of SnS2 and FePS3 and SnS2/FePS3 heterojunction. The response time of SnS2/FePS3/Gr heterojunction was slightly shorter than that of SnS2/FePS3 heterojunction and two orders of magnitude shorter than that of SnS2 and FePS3 under the 450 nm laser. The high responsivity and short response time of SnS2/FePS3/Gr heterojunction should be attributed to the type II band alignment and short channel distance in the vertical direction where electrons and holes can be separated and transit fast. Our result offered an opportunity for realization of the high-performance and broadband photodetector.
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Fukai, Masaya, Noriyuki Urakami i Yoshio Hashimoto. "Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction". Coatings 11, nr 12 (2.12.2021): 1485. http://dx.doi.org/10.3390/coatings11121485.

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Ternary Ta2NiSe5 is a novel electronic material having the property of an excitonic insulator at room temperature. The electrical properties of Ta2NiSe5 have not been elucidated in detail. We discuss the electronic properties in Ta2NiSe5 films and the formation of heterojunctions. Hall effect measurements showed p-type conductivity. The activation energies estimated from the temperature dependence of the carrier concentration were seen to be 0.17 eV and 0.12 eV, at approximately 300 and 400 K, respectively. It was observed that carrier generation behavior changes at the critical temperature of the excitonic insulator state (328 K). The temperature dependence of the Hall mobility below the critical temperature nearly follows the bell-shaped curves for conventional semiconductor materials. A MoS2/Ta2NiSe5 van der Waals heterojunction was fabricated using the transfer method. Rectification characteristics, which depend on the gate bias voltage, were obtained. The barrier height at the MoS2/Ta2NiSe5 heterointerface and the on/off ratio could be modulated by applying a gate bias voltage, suggesting that the carrier transport was exhibited in band-to-band flow. Our demonstration suggests that the knowledge of Ta2NiSe5 increased as an electronic material, and diode performance was successfully achieved for the electronic device applications.
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Liu, B., X. X. Ren, Xian Zhang, Ping Li, Y. Dong i Zhi-Xin Guo. "Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions". Applied Physics Letters 122, nr 15 (10.04.2023): 152408. http://dx.doi.org/10.1063/5.0139076.

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Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, nonvolatile magnetic random access memories, and spin logics. Although MTJs composed of multilayer vdW magnetic homojunction have been extensively investigated, the ones composed of vdW magnetic heterojunction are still to be explored. Here, we use first-principles approaches to reveal that the magnetic heterojunction MTJs have much more distinguishable TMR values than the homojunction ones. In the MTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find there are eight stable magnetic states, leading to six distinguishable electronic resistances. As a result, five sizable TMRs larger than 300% can be obtained (the maximum TMR is up to 620 000%). Six distinguishable memories are obtained, which is two times larger than that of a four-layered homojunction MTJ. The underlying relationships among magnetic state, spin-polarized band structures, and transmission spectra are further revealed to explain the multiple TMR values. We also find that the magnetic states, and thus TMRs, can be efficiently modulated by an external electric field. This study opens an avenue to the design of high-performance MTJ devices based on vdW heterojunctions.
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Rozprawy doktorskie na temat "Van der Waals Heterojunction"

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Lee, Choong hee. "Synthesis and Properties of Van der Waals-bonded Semiconductor Heterojunctions with Gallium Nitride". The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1534727788993068.

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Bezzi, Luca. "Materiali 2D van der Waals". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020.

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Dalla scoperta del grafene, molte ricerche sono state condotte sui cosiddetti “materiali 2D”. Questo elaborato si focalizza sulle proprietà strutturali, elettroniche, ottiche ed eccitoniche di due materiali bidimensionali, ossia il grafene il disolfuro di molibdeno (MoS2-1H), quest’ultimo un importante semiconduttore. Le proprietà di questi materiali sono diverse rispetto alla loro controparte massiva (bulk) grafite e MoS2-2H, e un loro confronto è stato preso in considerazione. Come metodo di indagine sono state scelte simulazioni quanto- meccaniche ab initio dei sistemi in esame, un approccio che, negli ultimi decenni, sta avendo un impatto sempre più importante sulla fisica, sulla chimica dello stato solido e sulla scienza dei materiali, promuovendo non solo una comprensione più profonda, ma anche la possibilità di contribuire in modo significativo alla progettazione di materiali per nuove tecnologie. Questo importante passo avanti è stato possibile grazie a: (i) una descrizione migliorata ed efficiente degli effetti elettronici a molti corpi (many-body) nella teoria del funzionale della densità (DFT), nonché lo sviluppo di metodi post-DFT per lo studio di proprietà specifiche; (ii) un’accurata implementazione di questi metodi in software altamente efficienti, stabili e versatili, capaci di sfruttare il potenziale delle architetture informatiche moderne. Tra i possibili software ab initio basati su DFT, abbiamo scelto il pacchetto di simulazione di Vienna ab initio VASP, considerato un gold standard per questo tipo di indagini. I risultati ottenuti per le varie proprietà di bulk e di superficie (bidimensionale) dei materiali scelti sono in ottimo accordo con dati ottenuti in precedenza, sia a livello teorico, sia sperimentale. Questo elaborato getta quindi le basi per futuri studi nel campo dei materiali 2D per comprendere, analizzare, ingegnerizzare nuovi materiali con proprietà desiderabili e per sviluppare nuove applicazioni degli stessi.
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Boddison-Chouinard, Justin. "Fabricating van der Waals Heterostructures". Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/38511.

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The isolation of single layer graphene in 2004 by Geim and Novoselov introduced a method that researchers could extend to other van der Waals materials. Interesting and new properties arise when we reduce a crystal to two dimensions where they are often different from their bulk counterpart. Due to the van der Waals bonding between layers, these single sheets of crystal can be combined and stacked with diferent sheets to create novel materials. With the goal to study the interesting physics associated to these stacks, the focus of this work is on the fabrication and characterization of van der Waals heterostructures. In this work, we first present a brief history of 2D materials, the fabrication of heterostructures, and the various tools used to characterize these materials. We then give a description of the custom-built instrument that was used to assemble various 2D heterostructures followed by the findings associated with the optimization of the cleanliness of the stack's interface and surface. Finally, we discuss the results related to the twisting of adjacent layers of stacked MoS2 and its relation to the interlayer coupling between said layers.
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Tiller, Andrew R. "Spectra of Van der Waals complexes". Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333415.

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Mauro, Diego. "Electronic properties of Van der Waals heterostructures". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10565/.

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L’interazione spin-orbita (SOI) nel grafene è attualmente oggetto di intensa ricerca grazie alla recente scoperta di una nuova classe di materiali chiamati isolanti topologici. Questi materiali, la cui esistenza è strettamente legata alla presenza di una forte SOI, sono caratterizzati dall’interessante proprietà di avere un bulk isolante ed allo stesso tempo superfici conduttrici. La scoperta teorica degli isolanti topologici la si deve ad un lavoro nato con l’intento di studiare l’influenza dell’interazione spin-orbita sulle proprietà del grafene. Poichè questa interazione nel grafene è però intrinsecamente troppo piccola, non è mai stato possibile effettuare verifiche sperimentali. Per questa ragione, vari lavori di ricerca hanno recentemente proposto tecniche volte ad aumentare questa interazione. Sebbene alcuni di questi studi abbiano mostrato un effettivo aumento dell’interazione spin-orbita rispetto al piccolo valore intrinseco, sfortunatamente hanno anche evidenziato una consistente riduzione della qualità del grafene. L’obbiettivo che ci si pone in questa tesi è di determinare se sia possibile aumentare l’interazione spin-orbita nel grafene preservandone allo stesso tempo le qualità. La soluzione proposta in questo lavoro si basa sull’utilizzo di due materiali semiconduttori, diselenio di tungsteno WSe2 e solfuro di molibdeno MoS2, utilizzati da substrato su cui sopra verrà posizionato il grafene formando così un’eterostruttura -nota anche di “van der Waal” (vdW)-. Il motivo di questa scelta è dovuto al fatto che questi materiali, appartenenti alla famiglia dei metalli di transizione dicalcogenuri (TMDS), mostrano una struttura reticolare simile a quella del grafene, rendendoli ideali per formare eterostrutture e ancora più importante, presentano una SOI estremamente grande. Sostanzialmente l’idea è quindi di sfruttare questa grande interazione spin-orbita del substrato per indurla nel grafene aumentandone così il suo piccolo valore intrinseco.
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Klein, Andreas. "Energietransferprozesse in matrixisolierten van-der-Waals-Komplexen". [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962344761.

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Odeyemi, Tinuade A. "Numerical Modelling of van der Waals Fluids". Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/22661.

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Many problems in fluid mechanics and material sciences deal with liquid-vapour flows. In these flows, the ideal gas assumption is not accurate and the van der Waals equation of state is usually used. This equation of state is non-convex and causes the solution domain to have two hyperbolic regions separated by an elliptic region. Therefore, the governing equations of these flows have a mixed elliptic-hyperbolic nature. Numerical oscillations usually appear with standard finite-difference space discretization schemes, and they persist when the order of accuracy of the semi-discrete scheme is increased. In this study, we propose to use a Chebyshev pseudospectral method for solving the governing equations. A comparison of the results of this method with very high-order (up to tenth-order accurate) finite difference schemes is presented, which shows that the proposed method leads to a lower level of numerical oscillations than other high-order finite difference schemes, and also does not exhibit fast-traveling packages of short waves which are usually observed in high-order finite difference methods. The proposed method can thus successfully capture various complex regimes of waves and phase transitions in both elliptic and hyperbolic regimes
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Marsden, Alexander J. "Van der Waals epitaxy in graphene heterostructures". Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/77193/.

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Graphene — a two-dimensional sheet of carbon atoms — has surged into recent interest with its host of remarkable properties and its ultimate thinness. However, graphene combined with other materials is starting to attract more attention. These heterostructures can be important for production routes, incorporating graphene into existing technologies, or for modifying its intrinsic properties. This thesis aims to examine the role of van der Waals epitaxy within these heterostructures. First, the graphene-copper interaction during chemical vapour deposition of graphene is investigated. Graphene is found to grow with a mismatch epitaxy of 8 relative to the [001] direction of the Cu(100) surface, despite a mismatch in symmetry and lattice parameter between two. Further, the electronic structure of both graphene and copper is unchanged by the interaction. This highlights the weak interaction between the two, owing to its van der Waals nature. Functionalised graphene is another important heterostructure, and is intensively studied for both graphene production routes and for altering graphene’s properties. Here, it is the change to the homogeneous graphene surface that makes it interesting for van der Waals epitaxy. The effect of functionalisation of graphene with atomic oxygen and nitrogen is presented next. In both cases, only small amounts of functionalisation ( 5 at%) is sufficient to significantly deteriorate the -band structure of the graphene through localisation. For small amounts of nitrogen functionalisation, and greater amounts of oxygen functionalisation, extended topological defects are formed in the graphene lattice. Unlike epoxide oxygen groups, these disruptions to the pristine graphene are found to be irreversible by annealing. Next, the interaction between graphene and the organic semiconducting molecule vanadyl-phthalocyanine (VOPc) is presented. As a result of the van der Waals nature of the graphene surface, VOPc molecules can form crystals microns in size when deposited onto a substrate with an elevated temperature of 155 C; at ambient temperatures, the crystals are only tens of nanometres across. In contrast, the functionalised graphene oxide surface prevents large crystal growth, even at elevated temperatures, because surface functionalities inhibit molecule diffusion. This highlights the importance of graphene as a substrate for molecular crystal growth, even when the growth is not epitaxial. Finally, the supramolecular assembly of trimesic acid (TMA) and terephthalic acid (TPA) is presented. Despite their chemical similarity they display different behaviour as they transition from monolayers to three-dimensional structures: for TMA, the epitaxial chicken wire structure seen at a monolayer templates up through the layers as molecules stack, until a thickness of 20 nm, when random in-plane orientations appear; on the other hand, TPA forms a brickwork structure at the monolayer, which quickly transitions to fibre-like crystals with a bulk structure for the thin films. However, the TPA orientation is still determined by the epitaxy with the graphene substrate, although this is significantly weaker than for TMA.
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Connelly, James Patrick. "Microwave studies of Van der Waals complexes". Thesis, University of Oxford, 1993. http://ora.ox.ac.uk/objects/uuid:3865eb1d-d288-44c9-8d42-84f7ff2c0608.

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This thesis describes the commissioning and development of a pulsed supersonic nozzle, Fourier-transform microwave spectrometer and its application to the study of several weakly bound van der Waals complexes. A pulsed supersonic expansion, Fourier-transform microwave spectrometer based on the Flygare design with a number of modifications has been constructed with an operating range of 6-18 GHz. A homodyne detection circuit mixing signals to modulus values between dc and 1 MHz is used, requiring two measurements to determine absolute transition frequencies. Transition frequencies are measured from the power spectrum by determining the first derivative zero crossing point in a least squares fitting procedure. Semiautomation of many of the spectrometer operations has been achieved allowing unattended data collection over scans of up to 300 MHz. The microwave spectrum of Ar2-OCS and Ar2-OC34S has been observed and analysed using conventional Watson S reduction hamiltonian parameters. Effective structural parameters are derived and used in a harmonic force field analysis, based on the centrifugal distortion constants, to compare the trimer interations with a model based on the sum of dimer interactions. A series of complexes containing the nitrogen molecule undergoing tunnelling motions have been studied. Hyperfine matrix elements for the first order nuclear quadrupole interaction are derived for the coupled identical nuclei case appropriate to the rapid tunnelling motions observed. The microwave spectrum of N2-OCS is described. Tunnelling and nuclear spin statistical effects for two symmetry states are observed arising from the interchange of nitrogen nuclei. Rotational and quadrupole constants are derived; an accidental near degeneracy of two rotational levels allows the off-diagonal quadrupole coupling constant to be determined from second order effects. A tunnelling hamiltonian fitting the quadrupole coupling constants to an angular potential has been used to calculate the tunnelling frequency and barrier to N2 rotation. The microwave spectrum of N2-O3 and a preliminary spectrum of N2-SO3 have been observed. Rotation-inversion motions of the O3 and SO2 moieties must be considered in addition to the N2 tunnelling to fit the spectrum. Tunnelling frequencies for the O3/SO2 and geared motions with the N2 are derived as well as structural parameters. Modifications for production of refractory molecules and complexes by laser ablation have been made. A modified nozzle employing rods of material is used with the ablation process taking place in the nozzle throat. Modifications to obtain an expansion along the axis of the microwave cavity employ a hemispherical Fabry-Perot cavity configuration. The system has been tested on a number of diatomic molecules including PbS and CuCl.
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Wright, Nicholas J. "Bound states of Van der Waals trimers". Thesis, Durham University, 1998. http://etheses.dur.ac.uk/5048/.

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A method for calculating the energy levels and wave functions of floppy tri- atomic systems such as rare-gas trimers has been developed. It is based upon a potential-optimized discrete variable representation and takes into account the wide-amplitude vibrations that occur in such systems. The quadrature error that occurs in DVR calculations is analysed and a method of correction implemented. The diagonalisation procedure is based upon a combination of successive diagonalisation and truncation and a Lanczos diagonaliser. Using this method the wave functions of the Ar(_3) Van der Waals trimer have been calculated. The wave functions for the low-lying states show very regular behaviour. Above the barrier to linearity, most of the wave functions are irregular but some have simple nodal patterns that suggest localization along periodic orbits. In addition to the "horseshoe" states previously described for H(^+)(_3), localized features corresponding to symmetric and antisym metric stretching vibrations around a linear configuration have been identified. The different localized modes can be combined to form more complex states in a manner analogous to normal modes. A preliminary study of the rotational states of Ar(_3) has also been performed. The rotational constants for the low lying states of Ar(_3) reflect the increasing average size of Ar(_3) with increasing vibrational excitation. The rotational constants are obtained from two methods, expectation values and energy level differences. The results for the levels above the barrier to isomerisation reveal that the simple models used for obtaining the rotational constants are no longer valid and indicate that a more sophisticated treatment is necessary.
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Książki na temat "Van der Waals Heterojunction"

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Parsegian, V. Adrian. Van der Waals forces. New York: Cambridge University Press, 2005.

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Holwill, Matthew. Nanomechanics in van der Waals Heterostructures. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18529-9.

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1926-, Rowlinson J. S., i I︠A︡velov B. E, red. Van der Waals and molecular science. Oxford: Clarendon Press, 1996.

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L, Neal Brian, Lenhoff Abraham M i United States. National Aeronautics and Space Administration., red. Van der Waals interactions involving proteins. New York: Biophysical Society, 1996.

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Kipnis, Aleksandr I͡Akovlevich. Van der Waals and molecular sciences. Oxford: Clarendon Press, 1996.

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Sily Van-der-Vaalʹsa. Moskva: "Nauka," Glav. red. fiziko-matematicheskoĭ lit-ry, 1988.

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Halberstadt, Nadine, i Kenneth C. Janda, red. Dynamics of Polyatomic Van der Waals Complexes. New York, NY: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-8009-2.

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NATO Advanced Research Workshop on Dynamics of Polyatomic Van der Waals Complexes (1989 Castéra-Verduzan, France). Dynamics of polyatomic Van der Waals complexes. New York: Plenum Press, 1990.

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M, Smirnov B. Cluster ions and Van der Waals molecules. Philadelphia: Gordon and Breach Science Publishers, 1992.

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Halberstadt, Nadine. Dynamics of Polyatomic Van der Waals Complexes. Boston, MA: Springer US, 1991.

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Więcej źródeł

Części książek na temat "Van der Waals Heterojunction"

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Su, Yanjie. "All-Carbon van der Waals Heterojunction Photodetectors". W High-Performance Carbon-Based Optoelectronic Nanodevices, 131–47. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5497-8_6.

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Su, Yanjie. "Carbon Nanotube/semiconductor van der Waals Heterojunction Solar Cells". W High-Performance Carbon-Based Optoelectronic Nanodevices, 149–70. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5497-8_7.

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Tsuchiya, Taku. "Van der Waals Force". W Encyclopedia of Earth Sciences Series, 1–2. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-39193-9_329-1.

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Tsuchiya, Taku. "Van der Waals Force". W Encyclopedia of Earth Sciences Series, 1473–74. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-39312-4_329.

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Bruylants, Gilles. "Van Der Waals Forces". W Encyclopedia of Astrobiology, 1728–29. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-11274-4_1647.

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Zhang, Xiang-Jun. "Van der Waals Forces". W Encyclopedia of Tribology, 3945–47. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_457.

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Arndt, T. "Van-der-Waals-Kräfte". W Springer Reference Medizin, 2429–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-48986-4_3207.

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Gooch, Jan W. "Van der Waals Forces". W Encyclopedic Dictionary of Polymers, 788. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_12442.

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Bruylants, Gilles. "Van der Waals Forces". W Encyclopedia of Astrobiology, 2583–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-44185-5_1647.

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Tadros, Tharwat. "Van der Waals Attraction". W Encyclopedia of Colloid and Interface Science, 1395–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-20665-8_159.

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Streszczenia konferencji na temat "Van der Waals Heterojunction"

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Islam, Arnob, Jaesung Lee i Philip X. L. Feng. "Gallium selenide (GaSe)-molybdenum disulfide (MOS2) van der Waals heterojunction diodes". W 2017 75th Device Research Conference (DRC). IEEE, 2017. http://dx.doi.org/10.1109/drc.2017.7999419.

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Dong, Chaobo, Chandraman Patil, Hao Wang, Sergiy Krylyuk, Albert Davydov, Hamed Dalir i Volker J. Sorger. "Ultralow Energy van der Waals InSe PN junction heterostructure photodetector for NIR applications". W CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jth3b.31.

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Ahn, Jongtae, Hyun Tae Choi i Do Kyung Hwang. "Two-dimensional van der Waals heterojunction diode for multiband photo detection (Conference Presentation)". W Low-Dimensional Materials and Devices 2019, redaktorzy Nobuhiko P. Kobayashi, A. Alec Talin i Albert V. Davydov. SPIE, 2019. http://dx.doi.org/10.1117/12.2529092.

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Tian, He, Cheng Li, Bingchen Deng, Fengnian Xia i Han Wang. "Vertical ambipolar barrier transistor based on black phosphorous-tin selenide van der waals heterojunction". W 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548472.

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Yang, Ning, Hung-Yu Chen, Jiangbin Wu, Tong Wu, Jun Cao, X. Ling, H. Wang i J. Guo. "Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection". W 2020 IEEE International Electron Devices Meeting (IEDM). IEEE, 2020. http://dx.doi.org/10.1109/iedm13553.2020.9371964.

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CAPOZZIELLO, S., V. F. CARDONE, S. CARLONI i A. TROISI. "VAN DER WAALS QUINTESSENCE". W Proceedings of the International Conference. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702999_0038.

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Neundorf, Dörte. "Van-der-Waals-interaction constant". W The 13th international conference on spectral line shapes. AIP, 1997. http://dx.doi.org/10.1063/1.51852.

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Liu, Chang-Hua. "van der Waals materials integrated nanophotonics". W Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVIII, redaktorzy Takuo Tanaka i Din Ping Tsai. SPIE, 2020. http://dx.doi.org/10.1117/12.2567598.

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Shtabovenko, Vladyslav. "Van der Waals forces in pNRQED". W XITH CONFERENCE ON QUARK CONFINEMENT AND HADRON SPECTRUM. AIP Publishing LLC, 2016. http://dx.doi.org/10.1063/1.4938701.

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Majumdar, Arka. "Van der Waals material integrated nanophotonics". W 2D Photonic Materials and Devices IV, redaktorzy Arka Majumdar, Carlos M. Torres i Hui Deng. SPIE, 2021. http://dx.doi.org/10.1117/12.2581864.

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Raporty organizacyjne na temat "Van der Waals Heterojunction"

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Klots, C. E. (Physics and chemistry of van der Waals particles). Office of Scientific and Technical Information (OSTI), październik 1990. http://dx.doi.org/10.2172/6608231.

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Mak, Kin Fai. Understanding Topological Pseudospin Transport in Van Der Waals' Materials. Office of Scientific and Technical Information (OSTI), maj 2021. http://dx.doi.org/10.2172/1782672.

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Kim, Philip. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, marzec 2015. http://dx.doi.org/10.21236/ada616377.

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Sandler, S. I. The generalized van der Waals theory of pure fluids and mixtures. Office of Scientific and Technical Information (OSTI), czerwiec 1990. http://dx.doi.org/10.2172/6382645.

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Sandler, S. I. (The generalized van der Waals theory of pure fluids and mixtures). Office of Scientific and Technical Information (OSTI), wrzesień 1989. http://dx.doi.org/10.2172/5610422.

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O'Hara, D. J. Molecular Beam Epitaxy and High-Pressure Studies of van der Waals Magnets. Office of Scientific and Technical Information (OSTI), sierpień 2019. http://dx.doi.org/10.2172/1562380.

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Menezes, W. J. C., i M. B. Knickelbein. Metal cluster-rare gas van der Waals complexes: Microscopic models of physisorption. Office of Scientific and Technical Information (OSTI), marzec 1994. http://dx.doi.org/10.2172/10132910.

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Gwo, Dz-Hung. Tunable far infrared laser spectroscopy of van der Waals bonds: Ar-NH sub 3. Office of Scientific and Technical Information (OSTI), listopad 1989. http://dx.doi.org/10.2172/7188608.

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French, Roger H., Nicole F. Steinmetz i Yingfang Ma. Long Range van der Waals - London Dispersion Interactions For Biomolecular and Inorganic Nanoscale Assembly. Office of Scientific and Technical Information (OSTI), marzec 2018. http://dx.doi.org/10.2172/1431216.

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Busarow, K. L. Tunable far infrared laser spectroscopy of Van der Waals molecules in a planar supersonic jet expansion. Office of Scientific and Technical Information (OSTI), grudzień 1990. http://dx.doi.org/10.2172/5610416.

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