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Gotowe bibliografie tematyczne / Undoped Semiconductors

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Artykuły w czasopismach
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Gotowa bibliografia na temat „Undoped Semiconductors”

Autor: Grafiati

Data publikacji: 7 września 2023

Data aktualizacji: 31 lipca 2025

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Artykuły w czasopismach na temat "Undoped Semiconductors"

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Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (2022): 245501. http://dx.doi.org/10.1063/5.0096697.

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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be loc

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Fortunato, Elvira, Alexandra Gonçalves, António Marques, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detecto

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Ma, Yandong, Ying Dai, and Baibiao Huang. "ChemInform Abstract: Ferromagnetism in Undoped Semiconductors." ChemInform 42, no. 42 (2011): no. http://dx.doi.org/10.1002/chin.201142213.

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Sacco, Olga, Antonietta Mancuso, Vincenzo Venditto, Stefania Pragliola, and Vincenzo Vaiano. "Behavior of N-doped TiO2 and N-doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation: A Preliminary Investigation." Catalysts 12, no. 10 (2022): 1208. http://dx.doi.org/10.3390/catal12101208.

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N-doped TiO2 (N-TiO2) and N-doped ZnO (N-ZnO) were synthesized utilizing ammonia as a dopant source. The chemico-physical characteristics of synthesized samples were studied by Raman spectroscopy, X-ray diffraction, SEM analysis, N2 adsorption–desorption at −196 °C, and diffuse reflectance spectroscopy. Compared to undoped samples, the introduction of nitrogen in the semiconductor lattice resulted in a shift of band-gap energy to a lower value: 3.0 eV for N-ZnO and 2.35 eV for N-TiO2. The photocatalysts were tested for the degradation of Eriochrome Black T (EBT), which was selected as a model

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Khidirova, Maftuna, and Abdigani Yuldoshev. "SEMICONDUCTORS." Journal of Universal Science Research 1, no. 6 (2023): 613–16. https://doi.org/10.5281/zenodo.8047079.

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In this article, we have explained about semiconductors, their types and their properties with scientifically based results.Semiconductors are materials that have properties in between normal conductors (materials that allow electric current to pass, e.g. aluminium) and insulators (which block electric current, e.g. sulphur).Semiconductors fall into two broad categories. First, there are intrinsic semiconductors. These are composed of only one kind of material. Silicon and germanium are two examples. They are also called "undoped semiconductors" or "i-type semiconductors".E

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Huang, Danhong, T. Apostolova, P. M. Alsing, and D. A. Cardimona. "Thermal-drag carrier cooling in undoped semiconductors." Journal of Applied Physics 98, no. 6 (2005): 063516. http://dx.doi.org/10.1063/1.2041842.

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Zhang, Zhufeng, Yinshuan Ren, and Lu Han. "Cr-doped CdS and ZnS nano/micro structure with ferromagnetic properties." Emerging Materials Research 13, no. 3 (2024): 1–10. http://dx.doi.org/10.1680/jemmr.24.00003.

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Transition metal doped CdS and ZnS dilute magnetic semiconductors have attracted widespread research interests due to their potential spin electron applications. Most of these theoretical and experimental analyses have focused on studying their optical properties. In response to the widespread application of dilute magnetic semiconductor nanomaterials in electronic components, semiconductor chips, integrated circuits, and other fields, based on solvent thermal method,the dilute magnetic semiconductors with room temperature ferromagnetic Cr-doped CdS and ZnS nanostructures were synthesized by s

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Sikam, Pornsawan, Ruhan Thirayatorn, Thanayut Kaewmaraya, Prasit Thongbai, Pairot Moontragoon, and Zoran Ikonic. "Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach." Molecules 27, no. 22 (2022): 7923. http://dx.doi.org/10.3390/molecules27227923.

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This work considers the enhancement of the thermoelectric figure of merit, ZT, of SrTiO3 (STO) semiconductors by (La, Dy and N) co-doping. We have focused on SrTiO3 because it is a semiconductor with a high Seebeck coefficient compared to that of metals. It is expected that SrTiO3 can provide a high power factor, because the capability of converting heat into electricity is proportional to the Seebeck coefficient squared. This research aims to improve the thermoelectric performance of SrTiO3 by replacing host atoms by La, Dy and N atoms based on a theoretical approach performed with the Vienna

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Hüsser, O. E., H. von Käanel, and F. Lévy. "Photoelectrochemistry of Doped and Undoped Semiconductors: A Comparison." Journal of The Electrochemical Society 132, no. 4 (1985): 810–14. http://dx.doi.org/10.1149/1.2113963.

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Hossein-Babaei, Faramarz, Saeed Masoumi, and Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors." Measurement Science and Technology 28, no. 11 (2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.

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Rozprawy doktorskie na temat "Undoped Semiconductors"

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Mak, Wing Yee. "Transport experiments in undoped GaAs/A1GaAs heterostructures." Thesis, University of Cambridge, 2013. https://www.repository.cam.ac.uk/handle/1810/252296.

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Anandan, C. "Metal contacts to undoped a-Si:H: interface modification and Scottky barrier characteristics." Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314636.

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Hui, Chun-wai. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38573398.

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Ma, Shun-kit Martin. "The two gallium vacancy-related defects in undoped gallium antimonide." Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31319658.

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Hui, Chun-wai, and 許俊偉. "Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38573398.

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Ma, Shun-kit Martin, and 馬信傑. "The two gallium vacancy-related defects in undoped gallium antimonide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B31319658.

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Chen, Shing Rong, and 陳祥榮. "Temperature Influence on The Energy Band Gap and The Fermi Level for Undoped Semiconductors." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/35616353767997301313.

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碩士<br>中原大學<br>應用物理學系<br>82<br>A detail fitting method of the metastable semiconductors alloys presented.Alloy composition and temperature are simul- taneously considered together by combined empirical formula of composition and modified temperature terms. This fitting method is based on the least-square technique scheme,and therefore, necessitates known values of the experi- mental data for the related binaries at two ends (for composi- tion;X=0 and X=1) of ternary alloy,which taken as the

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Bose, Riya. "Study of photophysical properties of doped/undoped semiconductor and metal nanoparticles and their heterostructures." Thesis, 2019. http://hdl.handle.net/10821/8312.

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Colloidal nanocrystals have been the centre of attraction of materials science research due to the ability of tailoring their properties with size, shape or composition of the same, in comparison to their bulk counterparts. Among these, mostly studied are binary and alloyed binary nanocrystals comprising of group II-VI and III-V materials. CdSe has been the work horse in this area with the emission covering the entire visible region. But the intrinsic toxicity along with the problem of re-absorption and self quenching in many of these binary materials limit their applications in several fields

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Sarkar, Suresh. "SYNTHESIS AND STUDY OF DIFFERENT PHOTO-PHYSICAL ASPECTS OF DOPED AND UNDOPED SEMICONDUCTOR NANOCRYSTALS." Thesis, 2019. http://hdl.handle.net/10821/8319.

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In recent days, synthesis of high quality semiconductor nanocrystals of groups II-VI, III-V, IV-VI like CdSe, InP, SnS etc. remains one of the prime interest for understanding the fundamental photo-physics of semiconductor nanocrystals and their potential applications in advanced technology for fabricating display devices, solar cell, LEDs etc. These nanocrsyals are also extensively used in the field of biology for drug delivery, cell imaging, DNA, protein structure analysis, in different kinds of photo-induced catalytic reactions etc. The optoelectrical properties of the semiconductor nanocry

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Jana, Santanu. "SYNTHESIS, PHOTO-PHYSICAL STUDIES AND APPLICATIONS OF DIFFERENT DOPED AND UNDOPED SEMICONDUCTOR NANOCRYSTALS." Thesis, 2019. http://hdl.handle.net/10821/8314.

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High quality semiconductor nanocrystals (quantum dots, QDs) are small crystal consisting of hundreds to a few thousand atoms each with typical dimension ranging from 1-100 nm which are great interest for fundamental studies and different technological applications such as light emitting devices, lasers, solar cells and biomedical labeing. The quantum mechanical coupling of over hundreds to thousands atoms develops the band structure in semiconductors. In this regime, the spatial confinement of the electronic charge carriers in the nanocrystal leads to a phenomenon known as Quantum Confinement

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Części książek na temat "Undoped Semiconductors"

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Tříska, Aleš, Jan Kočka, and Milan Vanĕček. "Density of Gap States in Undoped and Doped Amorphous Hydrogenated Silicon Obtained by Optical Spectroscopy." In Disordered Semiconductors. Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_50.

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Yu, P. W. "Persistent Photoluminescence Quenching Effect of 0.77-eV Emission in Undoped Semi-Insulating GaAs." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_166.

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Hickmott, T. W., P. M. Solomon, F. F. Fang, R. Fischer, and H. Morkoç. "Magnetotunneling and Magnetic Freezeout in n-GaAs-Undoped AlxGa1-xAs-n+GaAs Capacitors." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_92.

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Bonapasta, Aldo Amore. "Theory of H sites in undoped crystalline semiconductors." In Hydrogen in Semiconductors. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50022-x.

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Tang, X. M., J. Weber, Y. Baer, and F. Finger. "The dispersive diffusion of hydrogen in undoped a-Si:H." In Hydrogen in Semiconductors. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50019-x.

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Deák, P., L. C. Snyder, M. Heinrich, C. R. Ortiz, and J. W. Corbett. "Hydrogen complexes and their vibrations in undoped crystalline silicon." In Hydrogen in Semiconductors. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50035-8.

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EPPERLEIN, P. W., and H. P. MEIER. "IMPURITY TRAPPING IN NOMINALLY UNDOPED GaAs/AIGaAs QUANTUM WELLS." In Defect Control in Semiconductors. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-444-88429-9.50045-8.

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Marzouki, Riadh. "The Cuprate Ln₂CuO₄ (Ln: Rare Earth): Synthesis, Crystallography, and Applications." In Crystal Growth - Technologies and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.109193.

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This chapter is concerned with a study of undoped and doped cuprates of the general formula Ln2CuO4 (Ln = rare-earth metal) and Ln2–xMxCuO4±δ (Ln = rare earth and M = Sr, Ba, Ca, Ln’, Bi, and 3d metal). The crystal structures of the undoped and doped cuprates having the notations (T, T′, T*, S, and O), significantly depend, however, on the synthetic route. The topotactic synthesis is a specific method, which allows the transformation of the cuprate from the T to T′ structure. The importance of these materials originates from the discovery of the unconventional superconductors of the Ce-doped L

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Labidi, H., K. Zellama, P. Germain, et al. "Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon." In Hydrogen in Semiconductors. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50037-1.

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Rubinson, J. F. "Poly(sulfur nitride)." In Polymer Data Handbook. Oxford University PressNew York, NY, 2009. http://dx.doi.org/10.1093/oso/9780195181012.003.0183.

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Abstract Major Applications Electrode fabrication in crystalline, film, or paste form. Electrodes are useful in both aqueous and some nonaqueous solvents. Ion-selective electrode. Contact with semiconductors yields high-voltage junction. Photocell and lithium battery fabrication. Properties of Special Interest A number of the intermediates in its synthesis as well as the dry polymer are explosive under certain conditions. A thorough literature survey of its properties should be undertaken before synthesis or use.(1,2,3) Intrinsic metallic conductor. Undoped polymer is a superconductor at 0.3 K

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Streszczenia konferencji na temat "Undoped Semiconductors"

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Gupta, K. Das, W. Y. Mak, F. Sfigakis, et al. "Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666389.

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See, Andrew M., Oleh Klochan, Adam P. Micolich, et al. "Fabrication of Undoped AlGaAs∕GaAs Electron Quantum Dots." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666394.

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Nomura, S. "Negatively charged excitons in a back-gated undoped heterostructure." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994524.

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Tomimoto, Shinichi, Shinsuke Nozawa, Hiroyuki Kato, et al. "Optical electron spin orientation in Ga-doped and undoped ZnO films." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666581.

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Lilly, M. P. "Weak localization of dilute 2D electrons in undoped GaAs heterostructures." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994179.

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Harris, T. D., and J. I. Colonell. "Quantitative Fluorescence Determination of Impurities in Compound Semiconductors." In Laser Applications to Chemical Analysis. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/laca.1990.tub1.

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The electrical behavior of compound semiconductors is governed by the combined effects of the stoichiometry and impurities. The determination of impurity concentration in undoped samples is a largely unsolved problem. This deficiency results from the high purity routinely achieved in these materials, typically 1-20 ppb total impurity concentration, less than the detection limit of the applicable methods, such as SIMS. Progress toward quantitative impurity determination has been achieved by employing electronic Raman scattering, but this method is applicable only to acceptor concentration deter

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Eldridge, P. S., W. J. H. Leyland, J. D. Mar, et al. "The Absence Of The Rashba Spin-Splitting In Undoped Asymmetric Quantum Wells." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295469.

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Ikonnikov, A. V. "Cyclotron Resonance Study of Doped and Undoped InAs/AlSb QW Heterostructures." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994549.

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Halas, N. J., R. A. Cheville, F. L. P. Chibante, T. R. Ohno, and J. H. Weaver. "Carrier relaxation in undoped C60 solid films." In OSA Annual Meeting. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.thdd4.

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We have performed what we believe to be the first time-resolved absorption studies of C60 solid films. The films were fabricated by the evaporation of highly purified C60 onto a sapphire substrate in UHV conditions (<10-10 Torr) at 550 degrees C. Measurements were performed using a CPM laser (620 nm, pulsewidth <100 fsec) in a standard pump-probe transmission geometry. The excitation wavelength corresponds to excitation of carriers across the HOMO-LUMO gap of solid C60, a normally symmetry-forbidden transition in the isolated molecule. A nonexponential decay of optical transmission was o

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Ozaki, N. "Magnetic Properties of undoped and N-doped Zn1−xCrxTe Grown by MBE." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994130.

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Raporty organizacyjne na temat "Undoped Semiconductors"

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Lu, Tzu-Ming, and Lisa A. Tracy. Artificial Graphene in Undoped Semiconductor Heterostructures. Office of Scientific and Technical Information (OSTI), 2016. http://dx.doi.org/10.2172/1562617.

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