Gotowe bibliografie tematyczne / Ultra-thin Epitaxial Films

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  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Części książek
  4. Streszczenia konferencji
  5. Raporty organizacyjne

Gotowa bibliografia na temat „Ultra-thin Epitaxial Films”

Autor: Grafiati
Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Ultra-thin Epitaxial Films"

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Badoz, P. A., A. Briggs, E. Rosencher i F. Arnaud d'Avitaya. "Superconductivity in ultra-thin CoSi2 epitaxial films". Journal de Physique Lettres 46, nr 20 (1985): 979–83. http://dx.doi.org/10.1051/jphyslet:019850046020097900.

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Orna, Julia, Luis Morellón, Pedro Algarabel, José M. De Teresa, Amalio Fernández-Pacheco, Gala Simón, Cesar Magen, José A. Pardo i M. Ricardo Ibarra. "Fe3O4 Epitaxial Thin Films and Heterostructures: Magnetotransport and Magnetic Properties". Advances in Science and Technology 67 (październik 2010): 82–91. http://dx.doi.org/10.4028/www.scientific.net/ast.67.82.

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In this article, we review our recent research on Fe3O4 epitaxial thin films and Fe3O4/MgO/Fe epitaxial heterostructures. More specifically, we report on the magnetotransport properties of Fe3O4 epitaxial films in a wide range of film thicknesses and temperatures, focusing on the anomalous, planar and ordinary Hall effects. We also summarize our insight on the origin of the enhanced magnetic moment found in ultra-thin magnetite films (thickness t < 5 nm). Finally, our work on the growth, and structural and magnetic characterization of heteroepitaxial Fe3O4/MgO/Fe trilayers is presented.
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Meyers, D., E. J. Moon, M. Kareev, I. C. Tung, B. A. Gray, Jian Liu, M. J. Bedzyk, J. W. Freeland i J. Chakhalian. "Epitaxial stabilization of ultra-thin films of EuNiO3". Journal of Physics D: Applied Physics 46, nr 38 (4.09.2013): 385303. http://dx.doi.org/10.1088/0022-3727/46/38/385303.

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Boni, G. A., L. Hrib, S. B. Porter, G. Atcheson, I. Pintilie, K. Rode i L. Pintilie. "Electrical properties of NiFe2O4 epitaxial ultra-thin films". Journal of Materials Science 52, nr 2 (15.09.2016): 793–803. http://dx.doi.org/10.1007/s10853-016-0376-8.

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Shen, H., M. Wraback, J. Pamulapati, S. Liang, C. Gorla i Y. Lu. "Properties of Epitaxial Zno Thin Films for Gan and Related Applications". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 339–43. http://dx.doi.org/10.1557/s1092578300002696.

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In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (11 0 ) ZnO//( 01 2 ) Al2O3 and [0001] ZnO//[011] Al2O3 as confirmed by X-ray diffraction (θ-2θ, and ϕ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.
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Zheng, Xin Yu, Lauren J. Riddiford, Jacob J. Wisser, Satoru Emori i Yuri Suzuki. "Ultra-low magnetic damping in epitaxial Li0.5Fe2.5O4 thin films". Applied Physics Letters 117, nr 9 (31.08.2020): 092407. http://dx.doi.org/10.1063/5.0023077.

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De Luca, G. M., D. Preziosi, F. Chiarella, R. Di Capua, S. Gariglio, S. Lettieri i M. Salluzzo. "Ferromagnetism and ferroelectricity in epitaxial BiMnO3 ultra-thin films". Applied Physics Letters 103, nr 6 (5.08.2013): 062902. http://dx.doi.org/10.1063/1.4818136.

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Segmüller, Armin. "Characterization of Epitaxial Films by X-Ray Diffraction". Advances in X-ray Analysis 29 (1985): 353–66. http://dx.doi.org/10.1154/s0376030800010454.

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AbstractIn this paper, the application of recently developed x-ray diffraction techniques to the characterization of thin epitaxial films will be discussed. The double-crystal diffractometer, with high resolution in the non-dispersive arrangement, enables the materials scientist to study epitaxial systems having a very small mismatch with high precision. A key part of the characterization of an epitaxial film is the determination of the strain tensor by measuring lattice spacing! in various directions The determination of strain and composition profiles in ion-implanted films, epitaxial layers and superlattices by rocking-curve analysis will also be reviewed. Grazingincidence diffraction, an emerging new technique, can be used to obtain structural details parallel to the interface on films with thicknesses ranging down to a few atomic layers. The synchroton has now become increasingly available as a powerful source of x radiation which will facilitate the application of conventional and grazing-incidence diffraction to ultra-thin films.
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Zhang, Haimin, Dezhi Song, Fuyang Huang, Jun Zhang i Ye-Ping Jiang. "Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO3 (001) substrates". Chinese Physics B 32, nr 6 (1.05.2023): 066802. http://dx.doi.org/10.1088/1674-1056/acc80d9.

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Materials’ properties may differ in the thin-film form, especially for epitaxial ultra-thin films, where the substrates play an important role in their deviation from the bulk quality. Here by molecular beam epitaxy (MBE) and scanning tunneling microscopy/spectroscopy, we investigate the growth kinetics of ultra-thin tellurium (Te) films on SrTiO3 (STO) (001). The MBE growth of Te films usually exhibits Volmer–Weber (VW) island growth mode and no a-few-monolayer film with full coverage has been reported. The absence of wetting-layer formation in the VW growth mode of Te on STO (001) is resulted from its low diffusion barriers as well as its relatively higher surface energy compared with those of the substrate and the interface. Here we circumvent these limiting factors and achieve the growth of ultra-thin β-Te films with near-complete coverages by driving the growth kinetics to the extreme condition. There is a critical thickness (3 monolayer) above which the two-dimensional Te films can form on the STO (001) substrate. In addition, the scanning tunneling spectra on the ultra-thin Te film grown on STO exhibits an enormously large forbidden gap compared with that grown on the graphene substrate. Our work establishes the necessary conditions for the growth of ultra-thin materials with similar kinetics and thermodynamics.
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Lenshin, Aleksandr, Pavel Seredin, Dmitry Goloshchapov, Ali O. Radam i Andrey Mizerov. "MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates". Coatings 12, nr 5 (3.05.2022): 626. http://dx.doi.org/10.3390/coatings12050626.

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In our study, for the first time we demonstrate the advantages of using a compliant hybrid substrate of porSi/SiC to grow high-quality ultra-thin nanostructured AlxGa1−xN/GaN heterostructures using molecular beam epitaxy with plasma-activated nitrogen. Comparison of our experimental results obtained by micro-Raman spectroscopy, deconvolution, and the fitting of the experimental Raman spectra and subsequent calculations with information from already established literature sources show that the use of such a hybrid SiC/porSi substrate has a number of undeniable advantages for the growth of ultra-thin AlxGa1−xN/GaN nanoheterostructures without requiring the use of thick AIIIN buffer layers. Direct growth on a hybrid compliant substrate of SiC/porSi leads to a substantial relaxation in the elastic stresses between the epitaxial film, porous silicon, and silicon carbide, which consequently affects the structural quality of the ultra-thin AlxGa1−xN/GaN epitaxial layers. The experimental and computational data obtained in our work are important for understanding the physics and technology of AlxGa1−xN/GaN nanoheterostructures and will contribute to their potential applications in optoelectronics.
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Rozprawy doktorskie na temat "Ultra-thin Epitaxial Films"

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Marshall, Amanda. "Growth simulation in ultra-thin non-epitaxial films". Thesis, University of Reading, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.317965.

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Arnott, Michael. "Studies of ultra-thin epitaxial Fe/Cu(100) films". Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386336.

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Hu, Xiao. "Ultra-thin oxide films". Thesis, University of Oxford, 2016. https://ora.ox.ac.uk/objects/uuid:d7373376-84f1-459e-bffb-f16ce43f02b7.

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Oxide ultra-thin film surfaces have properties and structures that are significantly different from the terminations of the corresponding bulk crystals. For example, surface structures of epitaxial ultra-thin oxide films are highly influenced by the crystallinity and electronegativity of the metal substrates they grown on. Some enhanced properties of the novel reconstructions are related to catalysis, sensing and microelectronics, which has resulted in an increasing interest in this field. Ultra-thin TiOx films were grown on Au(111) substrates in this work. Two well-ordered structures within monolayer coverage - honeycomb (HC) and pinwheel - were generated and investigated. Special attention has been paid to the uniform (2 x 2) Ti2O3 HC phase including its regular structure and imperfections such as domain boundaries (DBs) and point defects. Linear DBs with long-range repeating units have been observed; density functional theory (DFT) modelling has been used to simulate their atomic structures and calculate their formation energies. Rotational DBs/defects show up less frequently, however a six-fold symmetrical 'snowflake' DB loop stands out. Two types of point defects have been discovered and assigned to Ti vacancies and oxygen vacancies/hydroxyl groups. Their diffusion manners and pairing habits have been discussed within an experimental context. The results of growing NbOx ultra-thin films on Au(111) are also presented in this thesis. An identical looking (2 x 2) HC structure to the Ti2O3 ultra-thin film has been formed; a stoichiometry of Nb2O3 is suggested. Another interesting reconstruction is a hollow triangle structure. Various sizes have been found, and sides of these equilateral triangles all show a double-line feature aligned along the { 1 ₁⁻ } directions of the Au(111) lattice. Chemical composition characterisations of NbOx thin films are still required as is DFT modelling. Experimental techniques used in this thesis include scanning tunnelling microscopy (STM), low energy electron diffraction (LEED), and X-ray photoelectron spectroscopy (XPS). Ultra-thin oxide films were created by physical vapour deposition (PVD) in ultra-high vacuum (UHV) systems.
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Cao, Yuan. "Thin Cr2O3 (0001) Films and Co (0001) Films Fabrication for Spintronics". Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc822733/.

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The growth of Co (0001) films and Cr2O3 (0001)/Co (0001) has been investigated using surface analysis methods. Such films are of potential importance for a variety of spintronics applications. Co films were directly deposited on commercial Al2O3 (0001) substrates by magnetron sputter deposition or by molecular beam epitaxy (MBE), with thicknesses of ~1000Å or 30Å, respectively. Low Energy Electron Diffraction (LEED) shows hexagonal (1x1) pattern for expected epitaxial films grown at 800 K to ensure the hexagonally close-packed structure. X-ray photoemission spectroscopy (XPS) indicates the metallic cobalt binding energy for Co (2p3/2) peak, which is at 778.1eV. Atomic force microscopy (AFM) indicates the root mean square (rms) roughness of Co films has been dramatically reduced from 10 nm to 0.6 nm by optimization of experiment parameters, especially Ar pressure during plasma deposition. Ultrathin Cr2O3 films (10 to 25 Å) have been successfully fabricated on 1000Å Co (0001) films by MBE. LEED data indicate Cr2O3 has C6v symmetry and bifurcated spots from Co to Cr2O3 with Cr2O3 thickness less than 6 Å. XPS indicates the binding energy of Cr 2p(3/2) is at 576.6eV which is metallic oxide peak. XPS also shows the growth of Cr2O3 on Co (0001) form a thin Cobalt oxide interface, which is stable after exposure to ambient and 1000K UHV anneal.
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Amiri-Hezaveh, A. "Photelectron spectroscopy of ultra-thin epitaxial f.c.c. magnetic films of iron and cobalt". Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233668.

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Constantino, Jennifer Anne [Verfasser], i Laurens W. [Gutachter] Molenkamp. "Characterization of Novel Magnetic Materials: Ultra-Thin (Ga,Mn)As and Epitaxial-Growth MnSi Thin Films / Jennifer Anne Constantino. Gutachter: Laurens W. Molenkamp". Würzburg : Universität Würzburg, 2013. http://d-nb.info/1102822884/34.

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Xing, Guoqiang. "Surface magnetic order of ultra thin epitaxial vanadium films on silver". Thesis, 1988. http://hdl.handle.net/1911/13331.

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Vanadium ultra-thin (1-7 monolayers) films are deposited epitaxially on well-defined single crystalline Ag(100) substrate. The topmost layers of the films are studied by electron capture spectroscopy(ECS). ECS is a surface-sensitive technique for the investigation of magnetic order existing at surfaces. It is found that the topmost atomic layer of V(100) films are ferromagnetic for all film thicknesses, in contrast to bulk vanadium which is paramagnetic at all temperatures. The films of thickness of 5 monolayers possess a surface Curie temperature T$\sb{\rm cs}$ = 475.1 K, and the critical behavior of the magnetization of the films is identical to that predicted by the well-known two-dimensional Ising Model of ferromagnet.
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Constantino, Jennifer Anne. "Characterization of Novel Magnetic Materials: Ultra-Thin (Ga,Mn)As and Epitaxial-Growth MnSi Thin Films". Doctoral thesis, 2013. https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-90578.

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The study of magnetic phases in spintronic materials is crucial to both our fundamental understanding of magnetic interactions and for finding new effects for future applications. In this thesis, we study the basic electrical and magnetic transport properties of both epitaxially-grown MnSi thin films, a helimagnetic metal only starting to be developed within our group, and parabolic-doped ultra-thin (Ga,Mn)As layers for future studies and applications
Um einerseits ein fundamentales Verständnis magnetischer Wechselwirkungen zu erhalten und andererseits neue Effekte für zukünftige Anwendungen zu finden, ist es entscheidend, magnetische Phasen spintronischer Materialien zu untersuchen. In dieser Arbeit fokussieren wir uns auf grundlegende elektrische und magnetische Transporteigenschaften zweier Materialsysteme. Das sind zum Ersten ultradünne (Ga,Mn)As Filme mit parabolischen Dotierprofilen, und zum Zweiten epitaktisch gewachsene Dünnschichten aus MnSi, einem helimagnetischen Metal, dessen Entwicklung seit Kurzem in unserer Gruppe vorangetrieben wird
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Hsieh, Hsun, i 謝旬. "Fabrication and Superconductivity of Epitaxial Ultra-thin δ-NbN Films on 3C-SiC/Si Substrate". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3g7z2u.

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碩士
國立臺灣大學
天文物理研究所
106
Niobium nitride compounds have rich physical properties due to their complexities in stoichiometry and structures. Among these NbxNy compounds, some of them show superconductivity. The δ-NbN phase, with a cubic crystalline symmetry, has a high superconducting transition temperature (TC), up to 17 K. Ultra-thin superconducting δ-NbN film has been widely applied on ultrasensitive devices due to its prominent physical properties, such as having a high superconducting transition temperature, a short intrinsic electron-phonon interaction time, and a high superconducting critical current density. Especially, hot-electron-bolometer (HEB) mixers using -NbN ultra-thin film demonstrate excellent performance on terahertz detection and are used on several astronomical telescopes. In my thesis study, I focused on the fabrication of high quality ultra-thin superconducting -NbN films and characterize their physical properties with the help of Dr. Hsiao-Wen Chang and other members in Dr. Ming-Jye Wang’s research group. We have realized the epitaxial growth of ultra-thin δ-NbN films on (100)-oriented 3C-SiC/Si substrates at temperature around 760°C by DC reactive magnetron sputtering. The deposition rate is about 0.05 nm/s. The δ-NbN films show superconductivity even with a thickness of 2.14 ± 0.03 nm (∼ 5 unit cells). The high-resolution transmission electron microscope images of films confirm excellent epitaxy and are used for estimating films’ thickness and lattice constant. We have investigated the magnetotransport properties of ultra-thin NbN films with the thickness ranging from 2.14 ± 0.03 nm to 4.95 ± 0.03 nm under external magnetic field up to 9 Tesla. From the measured Hall resistances, the carrier concentration, n, of film can be calculated, for example n ~ (4.13 ± 0.04) × 1028 m-3 for 3.84 ± 0.02 nm film. Generally, the TC of film decreases as the film thickness is reduced. The degradation of TC can be explained by the scaling law which describes the competition between disorder and superconductivity. Surprisingly, some distinct oscillations of both TC and ρ20K as a function of film thickness are observed with a period near 0.5 nm, where ρ20K is the resistivity of film at 20 K. The transition temperature of NbN film is suppressed under external magnetic field. The upper critical field at zero temperature, μ0HC2(0), was estimated by using the empirical equation of μ0HC2(T) = μ0HC2(0)(1-t2)/(1+t2), where t = T/TC(μ0H = 0). For example, the μ0HC2(0) of 2.14 ± 0.03 nm film is 8.13 ± 0.16 Tesla. Similar to TC and ρ20K, the μ0HC2(0) of film is also oscillating in thickness. The oscillation of TC, ρ20K, and μ0HC2(0) might be explained by the quantum size effect which was used to explain the oscillation of TC in thickness in other superconducting ultra-thin films.
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"Epitaxial growth of La-Ca-Mn-O thin films with ultra-sharp metal-insulator transition =: 外延生長金屬--絶緣轉變非常明顯的La-Ca-Mn-薄膜". 1999. http://library.cuhk.edu.hk/record=b5890066.

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by Leung Chi Hung.
Thesis (M.Phil.)--Chinese University of Hong Kong, 1999.
Includes bibliographical references.
Text in English; abstracts in English and Chinese.
by Leung Chi Hung.
Acknowledgments --- p.i
Abstract --- p.ii-iii
Table of Contents --- p.iv-v
Figures Caption --- p.vi-xii
Tables Caption --- p.xiii
Chapter 1. --- Introduction
Chapter 1.1 --- "Magnetoresistance (MR),Giant Magnetoresistance (GMR),Colossal Magnetoresistance (CMR) and Their Applications" --- p.1-1
Chapter 1.2 --- Colossalmagnetoresistance Effect in LCMO --- p.1-5
Chapter 1.3 --- Significance of Ultra-Sharp Metal-Semiconductor Transition LCMO Thin Film --- p.1-12
Chapter 1.4 --- The Use of Silver in the YBCO --- p.1-14
Chapter 1.5 --- Previews --- p.1-15
Chapter 1.6 --- References --- p.1-17
Chapter 2. --- Epitixial Growth of Single-Crystal LCMO Thin Film by FTS method
Chapter 2.1 --- Facing-Target Sputtering Method --- p.2-1
Chapter 2.2 --- Fabrication of LCMO Targets --- p.2-4
Chapter 2.3 --- Deposition of the LCMO Thin Film
Chapter 2.3.1 --- Deposition Condition --- p.2-6
Chapter 2.3.2 --- Deposition Process --- p.2-9
Chapter 2.4 --- X-ray Diffraction Studies and Surface Morphology --- p.2-11
Chapter 2.5 --- M-S Transition of LCMO Thm Film --- p.2-15
Chapter 2.6 --- Discussions --- p.2-19
Chapter 3. --- The Role of Silver in LCMO
Chapter 3.1 --- Reaction between Ag and LCMO --- p.3-1
Chapter 3.2 --- Grain Size and Transition Temperature in Bulk LCMO --- p.3-9
Chapter 3.3 --- Improving the Sharpness of Metal - Semiconductor Transition and Crystallinity of LCMO Film --- p.3-15
Chapter 3.4 --- Stabilization of the LCMO Structure --- p.3-21
Chapter 3.5 --- Discussions --- p.3-25
Chapter 4 --- Epitaxial Growth of the Ultra-Sharp Metal-Semiconductor Transition LCMO Thin Film
Chapter 4.1 --- Synthesis Process of the Ultra-Sharp Metal-Semiconductor Transition LCMO Thin Films --- p.4-1
Chapter 4.2 --- Resistivity and Magnetoresistance --- p.4-6
Chapter 4.3 --- Thermal Annealing Effects
Chapter 4.3.1 --- Oxygen Annealing Effect --- p.4-15
Chapter 4.3.1 --- High Pressure Annealing Effect --- p.4-20
Chapter 4.3.2 --- Vacuum Annealing Effect --- p.4-23
Chapter 4.4 --- Surface Morphology and Characterization --- p.4-27
Chapter 4.5 --- Discussions --- p.4-37
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Części książek na temat "Ultra-thin Epitaxial Films"

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Schuster, Isabelle, Alain Marty, Bruno Gilles i Gregory Abadias. "Structure and Ordering Process in Epitaxial Ultra-Thin Films of Metallic Alloys: In-Situ Temperature X-ray Diffraction of AuNi Layers". W Interface Controlled Materials, 1–10. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2005. http://dx.doi.org/10.1002/352760622x.ch1.

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Streszczenia konferencji na temat "Ultra-thin Epitaxial Films"

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Clemens, B. M., J. A. Bain, B. M. Lairson, B. J. Daniels, A. P. Payne, N. M. Rensing i S. Brennan. "In-Situ Structural Characterization of Ultra-Thin Epitaxial Metal Films and Multilayers Observed with Grazing Incidence X-Ray Scattering". W Physics of X-Ray Multilayer Structures. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/pxrayms.1994.wc.1.

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The flexibility of physical vapor deposition allows fabrication of near ideal structures which can be used to investigate fundamental aspects of the mechanics of materials. One important phenomena which can be addressed is the deformation which occurs during relaxation of epitaxial strains. We have developed a unique sputter deposition system capable of performing in-situ structural characterization using grazing incidence x-ray scattering (GIXS). This gives us the ability to accurately measure lattice parameters of films in the monolayer thickness regime. Using this capability, we have investigated epitaxial orientation relations and coherency stress relaxation in several epitaxial film systems, including Cu on Fe (001), and Co on Pt (111).
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Ishibashi, Tadashi, Shin'ichiro Tamura, Jun'etsu Seto, Masahiko Hara, Hiroyuki Sasabe i Wolfgang Knoll. "In situ RHEED observation of MBE growth of organic thin films". W Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.md.19.

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Studies on molecular beam epitaxial growth for organic molecules (OMBE) have been attracting attentions as a new fabrication method for preparation of ultra-thin films of organic molecules. Molecular beam epitaxy (MBE) has been developed as a deposition technique for the controlled growth of atomically flat multilayer structures. Recently, this method has been applied to organic materials, while the mechanism of the growth has not been thoroughly understood compared to that of semiconductor. In this report, the growth mechanism of Lead Phthalocyanine (PbPc) thin films onto highly oriented pyrolytic graphite (HOPG) substrate by OMBE method was investigated using in situ refraction high energy electron diffraction (RHEED). RHEED has been widely used for in situ monitoring of the thin film MBE growth. The intensity of the RHEED specular beam spot oscillates according to the layer-by-layer growth[1]. In 1981, Joyce et.al. observed an oscillated phenomena of RHEED intensity with growth of semiconductor for the first time[2]. After that, a lot of work in the semiconductor field have been reported and developed. Although application for organic materials is expected, so far RHEED oscillation studies have only been reported for Copper Phthalocyanine (CuPc) on MoS2 substrate[3]. Therefore, we explored the possibilities of using in situ RHEED observations to investigate the OMBE growth mechanism of PbPc on HOPG system.
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Ignatiev, A. "Proposed epitaxial thin film growth in the ultra-vacuum of space". W VACUUM MECHATRONICS, FIRST INTERNATIONAL WORKSHOP. AIP, 1989. http://dx.doi.org/10.1063/1.38715.

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Sneh, Ofer, Michael L. Wise i Steven M. George. "Atomic Layer Growth of SiO2 on Si(100) using SiCl4 and H2O in a Binary Reaction Sequence". W Microphysics of Surfaces: Nanoscale Processing. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.mfb4.

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Future silicon microelectronics technology will require nanoscale components to achieve ultra large scale integration. The reduction to nanometer scale sizes will be dependent on processing that can be controlled at the atomic level and conformally deposit into high aspect ratio structures. The Si/SiO2 interface is central in silicon technology. Controlled and conformal deposition of SiO2 dielectric layers will be crucial for the fabrication of MOS gate oxides as thin as 50 Å and high aspect ratio trench capacitors in DRAM. Both requirements can be inherently achieved by the technique known as atomic layer epitaxy (ALE)1 or atomic layer processing (ALP) if the deposited film is not epitaxial.
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Przybylski, M., M. Nyvlt, Y. Shi, L. Yan, J. Zukrowski, J. Barthel i J. Kirschner. "Magnetism and magneto-optical response from ultra-thin Co films epitaxially grown on Pd substrates". W INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1463461.

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Raporty organizacyjne na temat "Ultra-thin Epitaxial Films"

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Morton, S., J. Tobin, M. Spangenberg, J. Neal, T. Shen, G. Waddill, J. Matthew i in. Magnetic properties of ultra thin epitaxial Fe films on GaAs(001). Office of Scientific and Technical Information (OSTI), październik 2003. http://dx.doi.org/10.2172/15009722.

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