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Wong, Pak Kin. "Magnetic tunnel junctions". Thesis, University of Cambridge, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624388.
Pełny tekst źródłaPal, Avradeep. "Spin filter tunnel junctions". Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708243.
Pełny tekst źródłaAlmasi, Hamid, i Hamid Almasi. "Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier". Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/626332.
Pełny tekst źródłaMalec, Christopher Evan. "Transport in graphene tunnel junctions". Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41140.
Pełny tekst źródłaTanner, Shawn. "Tunnel junctions, cantilevers, and potentials". Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3256388.
Pełny tekst źródłaKolhatkar, Gitanjali. "Characterisation of high-efficiency multi-junction solar cells and tunnel junctions". Thesis, University of Ottawa (Canada), 2011. http://hdl.handle.net/10393/28939.
Pełny tekst źródłaWeides, Martin P. "Josephson tunnel junctions with ferromagnetic interlayer". Jülich : Forschungszentrum, Zentralbibliothek, 2007. http://d-nb.info/98785433X/34.
Pełny tekst źródłaWeides, Martin P. "Josephson tunnel junctions with ferromagnetic interlayer". [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=982866550.
Pełny tekst źródłaKaiser, Christian. "Novel materials for magnetic tunnel junctions". kostenfrei, 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=97561388X.
Pełny tekst źródłaStokes, Michael Keith. "Phonon absorption in superconducting tunnel junctions". Thesis, Lancaster University, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.497770.
Pełny tekst źródłaEames, Matthew E. "The theory of magnetic tunnel junctions". Thesis, University of Exeter, 2007. http://hdl.handle.net/10036/38673.
Pełny tekst źródłaJones, BenoiÌ‚t David. "Stresses in sprayed concrete tunnel junctions". Thesis, University of Southampton, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438713.
Pełny tekst źródłaCohen, Lesley Francis. "Microwave investigation of Josephson tunnel junctions". Thesis, University of Cambridge, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.278295.
Pełny tekst źródłaApachitei, Geanina. "Tunnelling effects in multiferroic tunnel junctions". Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/94010/.
Pełny tekst źródłaYu, Chak Chung Andrew. "Electron microscopy studies of magnetic tunnel junctions". Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302402.
Pełny tekst źródłaSuszka, Anna Kinga. "Resonant spin transfer in magnetic tunnel junctions". Thesis, University of Leeds, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.493600.
Pełny tekst źródłaHao, Shuang. "Josephson tunnel junctions using Langmuir-Blodgett films". Thesis, University of Southampton, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.252717.
Pełny tekst źródłaSulzbach, Milena Cervo. "Resistive Switching in Hf0.5Zr0.5O2 ferroelectric tunnel junctions". Doctoral thesis, Universitat Autònoma de Barcelona, 2021. http://hdl.handle.net/10803/673213.
Pełny tekst źródłaEl requisito de sistemas informáticos y de almacenamiento de datos de alto rendimiento en la era del Internet de las cosas (IoT) alcanza los límites de la tecnología actual. Las memorias flash DRAM y NAND presentan importantes desventajas como la volatilidad de los datos y limitaciones de velocidad. Por otro lado, el cuello de botella de von Neumann limita el rendimiento informático al imponer una limitación física para la comunicación entre las partes del ordenador. Se han propuesto nuevas tecnologías de memoria, como ReRAM, en dispositivos alternativos que combinan alto rendimiento, bajo precio y alta densidad. Un tipo prometedor de ReRAM es una unión de túnel ferroeléctrico (FTJ), que és compuesta por una capa ultrafina de material ferroeléctrico intercalado entre dos electrodos metálicos. La dirección de la polarización (P) modula las propiedades de barrera en la interfaz con los electrodes, cambiando la conductividad de los electrones. Los estados de alta y baja resistencia (HRS y LRS, respectivamente) se pueden estabilizar en el dispositivo invirtiendo P. Por lo tanto, la información se puede escribir aplicando un pulso externo de voltaje para polarizar la muestra en una dirección particular y almacenarla en su resistencia. Sin embargo, otros efectos impulsados por el campo eléctrico también pueden causar conmutación resistiva en FTJ. Esta tesis tiene como objetivo explorar los fenómenos de variación resistiva en uniones de túneles ferroeléctricos de Hf0.5Zr0.5O2 que se pueden utilizar en el almacenamiento de datos de alta eficiencia. Óxidos basados en HfO2 han sido utilizados durante décadas como elementos en ReRAM debido a su cambio de resistencia causado por reacciones redox. Sin embargo, el descubrimiento de la ferroelectricidad en el HfO2 dopado abre las puertas para utilizar la inversión de polarización como fenómeno para controlar la resistencia y, por lo tanto, para escribir información. Aquí, se utilizan capas epitaxiales de HZO con un grosor inferior a 5 nm. Análisis eléctricos y estructurales han permitido identificar la coexistencia de la inversión ferroeléctrica genuina y movimiento iónico como mecanismos para inducir cambios de resistencia en el mismo electrodo. Se encontró que la variación de resistencia causada por movimiento iónico se aprovecha de las fronteras de grano incoherentes entre las fases de grano ortorrómbica (ferroeléctrica) y monoclínica (paraeléctrica). Al diseñar la microestructura de la capa, utilizando un sustrato con un parámetro de red diferente, se optimiza la variación de resistencia por inversión ferroeléctrica y se suprime el movimiento iónico. Además, al sellar las fronteras de grano con una capa dieléctrica adicional aumentó la ventana de voltaje de escritura para la variación resistiva puramente ferroeléctrica y afectó significativamente el rendimiento del dispositivo. Capas ultrafinas (2 nm) de HZO fueron crecidas en sustratos scandate para demostrar robustas propiedades memristivas. Se demuestran ciclos de potenciación/depresión reproducibles y mediciones de spike-timing-dependent plasticity (STDP). Estos resultados, combinados con la compatibilidad de las capas de HZO con la tecnología CMOS actual, la producción amigable con el medio ambiente y el buen rendimiento, muestran que las uniones de túnel ferroeléctricas de HZO son alternativas viables para su aplicación en memorias no volátiles. Además, las propiedades memristivas fundamentales de la modulación de la conducción muestran que pueden usarse en dispositivos con inspiración neuromórfica.
The requirement for high-performance data storage and computing systems in the Internet of Things (IoT) era reaches the limits of the current technology. DRAM and NAND flash memories show significant drawbacks as data volatility and limitations of speed. On the other hand, Von Neumann bottleneck limits computing performance by imposing a physical limitation for communication between parts of the computer. New memory technologies, like resistive random-access memory (ReRAM), have been proposed as alternative devices that combine high performance, low price, and high density. One promising type of ReRAM is a ferroelectric tunnel junction (FTJ), which is composed of an ultrathin layer of ferroelectric material sandwiched between two metallic electrodes. The ferroelectric polarization (P) direction modulates the barrier properties at the interface with the electrodes, changing electrons' conductivity. A high and low resistance states (HRS and LRS, respectively) can be stabilized in a device by reversing P. Therefore, information can be written by applying an external voltage pulse to polarize the sample in one particular direction and store in its resistance. Nevertheless, other electric field-driven effects can also cause resistive switching in FTJ. This thesis aims to explore the resistive switching phenomena in Hf0.5Zr0.5O2 ferroelectric tunnel junctions that could be used in highly efficient data storage. HfO2-based oxides have been explored as ReRAM elements due to their resistance change caused by redox reactions. However, the discovery of ferroelectricity in doped-HfO2 opens doors to use polarization reversal as a phenomenon to control the resistance and, therefore, to writing information. Here, epitaxial HZO films with a thickness smaller than 5 nm are used. Electrical and structural analyses have allowed identifying the coexistence of genuine ferroelectric switching and ionic-like motion as mechanisms to induce resistance change in the same junction. It was found that ionic-motion-driven resistive switching takes advantage of incoherent grain boundaries between orthorhombic (ferroelectric) phase and monoclinic (paraelectric) phase grains. By engineering the film's microstructure, using a substrate with a different in-plane lattice parameter, the ferroelectric switching was optimized, and the ionic motion was suppressed. Also, sealing the grain boundaries with an extra dielectric layer increased the writing voltage window for purely ferroelectric switching and significantly impacted device performance. Ultrathin (2 nm) HZO films grown on scandate substrates were used to demonstrate robust memristive properties associated with polarization reversal. Reproducible potentiation/depression cycles and spike-timing-dependent plasticity (STDP) measurements were demonstrated. These results, combined with HZO films' compatibility with current CMOS technology, environmentally friendly production, and good performance, show HZO tunnel junctions are feasible alternatives for application in non-volatile memories. Also, memristive properties of modulation of conduction show they can be used in neuromorphic inspired devices.
Universitat Autònoma de Barcelona. Programa de Doctorat en Física
Krishnamoorthy, Sriram. "Gallium Nitride Based Heterostructure Interband Tunnel Junctions". The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1409019988.
Pełny tekst źródłaBoyn, Sören. "Ferroelectric tunnel junctions : memristors for neuromorphic computing". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS089/document.
Pełny tekst źródłaClassical computer architectures are optimized to process pre-formatted information in a deterministic way and therefore struggle to treat unorganized natural data (images, sounds, etc.). As these become more and more important, the brain inspires new, neuromorphic computer circuits such as neural networks. Their energy-efficient hardware implementations will greatly benefit from nanodevices, called memristors, whose small size could enable the high synaptic connectivity degree observed in the brain.In this work, we concentrate on memristors based on ferroelectric tunnel junctions that are composed of an ultrathin ferroelectric film between two metallic electrodes. We show that the polarization reversal in BiFeO3 films can induce resistance contrasts as high as 10^4 and how mixed domain states are connected to intermediate resistance levels.Changing the electrode materials provides insights into their influence on the electrostatic barrier and dynamic properties of these memristors. Single-shot switching experiments reveal very fast polarization switching which we further investigate in cumulative measurements. Their analysis in combination with piezoresponse force microscopy finally allows us to establish a model describing the memristor dynamics under arbitrary voltage signals. After the demonstration of an important learning rule for neural networks, called spike-timing-dependent plasticity, we successfully predict new, previously unexplored learning curves. This constitutes an important step towards the realization of unsupervised self-learning hardware neural networks
Galceran, Vercher Regina. "Spin-dependent transport in oxide-based tunnel junctions". Doctoral thesis, Universitat Autònoma de Barcelona, 2015. http://hdl.handle.net/10803/287903.
Pełny tekst źródłaThis thesis studies the magnetotransport properties of tunnel junctions in which one of the electrodes is the ferromagnetic oxide La0.7Sr0.3MnO3 (LSMO). In particular, we focus on two different phenomena: (i) magnetoresistance (MR) in tunnel junctions with a single magnetic electrode and (ii) spin filtering in magnetic tunnel junctions. The tunneling effect is extremely sensitive to the interfaces and good quality of the heterostructures is crucial toward the optimal performance of the devices. For this reason, much of the thesis is dedicated to the growth (by sputtering) and characterization of thin films, to the study of interfaces in heterostructures and to the fabrication of junctions. With respect to the junctions with a single magnetic electrode, we concentrate on the tunnelling transport as a function of temperature and magnetic field applied in Pt/LaAlO3/LSMO junctions. In our work, we have identified the different physical mechanisms which play a relevant role on the MR of this system: tunnelling anisotropic magnetoresistance (TAMR), of the order of 4 % at low temperature, and another contribution to the MR, of the order of 17 %. Furthermore, TAMR at low magnetic field is attributed to rotation of magnetic domains. In the case of junctions with two magnetic electrodes, we must also take into account the relative orientation between their magnetizations. The studied system is Fe/MgO/LSMO, in which a large tunnel magnetoresistance (TMR) is expected due to the combination of spin filtering from the Fe/MgO and the half-metallicity of LSMO. As a consequence of the formation of FeOX at the Fe/MgO interface, we obtain different sign of the TMR for different junctions: a negative TMR of 4 % at low temperatures is ascribed to a magnetically disordered FeOX and a positive TMR of 25 % at 70 K is attributed to magnetic ordering of the FeOX at the interface with MgO, which results in spin filtering. When the MgO barrier thickness is reduced to 1.2 nm, this ordered FeOX coupled antiferromagnetically to the LSMO layer gives rise to an interesting magnetoresistive behaviour, especially when measured with the magnetic field applied out-of-plane. We have not been able to avoid the formation of FeOX in this heterostructure, even for in-situ growth or annealings, and we suggest that the MgO barrier is permeable to the oxygen from the manganites, which would be responsible for the oxidation of the Fe. On the other hand, aiming at the fabrication of junctions with magnetic tunnel barrier which acts as spin filter, we have studied the possibility of using La2CoMnO6 (LCMO) thin films as barrier. This material is ferromagnetic, insulating and possesses perovskite structure, but there are only a few works on its thin film growth. What is more, such works are performed with pulsed laser deposition and thicknesses are above 100 nm, thus not suitable as insulating barriers in spin filters. We have performed a detailed study of the growth, optimization and characterization of LCMO thin films. In this regard, we have achieved epitaxial, insulating, ferromagnetic thin films (from 20 to 5 nm), with Curie temperatures around 230 K and perpendicular magnetic anisotropy. LCMO/LSMO heterostructures, whose magnetoresistive properties remain to be studied in future work, have also been grown.
Kugler, Zoe [Verfasser]. "Perpendicular anisotropy in magnetic tunnel junctions / Zoe Kugler". Bielefeld : Universitätsbibliothek Bielefeld, Hochschulschriften, 2012. http://d-nb.info/1023862891/34.
Pełny tekst źródłaAnderson, Graham Ian Robert. "The effects of annealling on magnetic tunnel junctions". Thesis, University of Leeds, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485761.
Pełny tekst źródłaRomero, Dominguez Saul. "Noise and electrical characterization in magnetic tunnel junctions". Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611223.
Pełny tekst źródłaHamidizadeh, Yasaman. "Inelastic electron tunnelling spectroscopy using nanoscale tunnel junctions". Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/26225.
Pełny tekst źródłaBonholzer, Michael. "Magnetic Tunnel Junctions based on spinel ZnxFe3-xO4". Doctoral thesis, Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-212756.
Pełny tekst źródłaPrice, Edward P. "Characterization of transport processes in magnetic tunnel junctions /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC IP addresses, 2001. http://wwwlib.umi.com/cr/ucsd/fullcit?p3022231.
Pełny tekst źródłaKurij, Georg. "Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS051/document.
Pełny tekst źródłaSensing of extremely weak magnetic signals, such as produced by electrical activity of the human heart and brain, still remains a challenge. A very promising alternative to established field-sensing techniques is a novel, spin electronic based, ultrasensitive device called an all-oxide mixed sensor. It is formed by a superconducting loop, acting as a flux-to-field transformer and field amplifier, combined with a magnetic tunnel junction sensing the field.Our research activities have the goal to improve the performance of the mixed sensor, focusing on its core component – the magnetic tunnel junction (MTJ). The capability of an MTJ is predominantly determined by the quality of the tunnel barrier and by the stability of magnetization states. In this context, oxide materials, known for their remarkable physical properties, have already shown their advantages. Thus, studies on La0.7Sr0.3MnO3/SrTi0.8Nb0.2O3 functional oxide interfaces, exploration of SrRuO3/ La0.7Sr0.3MnO3 exchange bias system, and the final integration of these two components into a magnetic tunnel junction form the main part of our work.In the presented thesis, oxide thin films and heterostructures used for studies were grown by pulsed laser deposition (PLD). We fabricated electronic devices for investigations using clean room microfabrication techniques , e.g. optical lithography, chemically assisted ion beam etching (CAIBE) and sputtering. Temperature dependent magnetic and (magneto-) transport measurements were performed.Metal-semiconductor interfaces formed by the half-metallic ferromagnet La0.7Sr0.3MnO3 (LSMO) and heavily doped semiconductor SrTi0.8Nb0.2O3 (Nb:STO) were studied. Antiferromagnetic coupling at the interface of the LaSrMnO3 and itinerant ferromagnet SrRuO3 was explored. Magnetic tunnel junctions with Schottky barrier were investigated (MTJs with Nb:STO and LSMRO)
Jerjen, Iwan. "Superconducting tunnel junctions as energy resolving single photon detectors /". Zürich : ETH, 2007. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17113.
Pełny tekst źródłaJo, Moon-Ho. "Spin polarised tunnel junctions based on half-metallic manganites". Thesis, University of Cambridge, 2001. https://www.repository.cam.ac.uk/handle/1810/183622.
Pełny tekst źródłaSingh, Aparajita. "Improving Current-Asymmetry of Metal-Insulator-Metal Tunnel Junctions". FIU Digital Commons, 2016. http://digitalcommons.fiu.edu/etd/2827.
Pełny tekst źródłaBernert, Kerstin. "Spin-transfer torques in MgO-based magnetic tunnel junctions". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-135339.
Pełny tekst źródłaDiese Arbeit befasst sich mit Spin-Transfer-Torque-Effekten in MgO-basierten magnetischen Tunnelstrukturen. Die Phasendiagramme als Funktion von Spannung und Magnetfeld von CoFeB/MgO/CoFeB-Tunnelstrukturen mit Magnetisierung in der Ebene wurden experimentell bestimmt. Um thermische Anregungseffekte zu limitieren, wurden die Experimente einerseits mit nanosekundenlangen Spannungspulsen und andererseits bei niedrigen Temperaturen (4.2 K) durchgeführt. Die Spannungsabhängigkeit der beiden Spin-Torque-Parameter (in-plane und senkrechter Spin-Transfer-Torque) wurde aus Messungen der thermisch angeregten ferromagnetischen Resonanz bestimmt, wobei sich Werte ergaben, die gut mit vorangegangenen Untersuchungen übereinstimmen. Zusätzlich wurden Werte für Materialparameter wie die effektive Magnetisierung und den Dämpfungsparameter gewonnen. Unter Verwendung der erhaltenen Werte wurden die Schaltspannungen als Funktion des angelegten Magnetfeldes analytisch und numerisch berechnet, indem die erweiterte Landau-Lifshitz-Gilbert-Gleichung gelöst wurde. Im Gegensatz zu vorangegangenen Untersuchungen wurde der senkrechte Spin-Transfer-Torque dabei mit einbezogen. Darüber hinaus wurden verschiedene Konfigurationen für die Richtung der magnetischen Anisotropie der freien und fixierten Schicht berücksichtigt
Hussain, Mallik Mohd Raihan. "Nonlinear Electromagnetic Radiation from Metal-Insulator-Metal Tunnel Junctions". University of Dayton / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1490823061190116.
Pełny tekst źródłaPlatt, Christopher L. "Magnetic and transport properties of spin-dependent tunnel junctions /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC IP addresses, 1999. http://wwwlib.umi.com/cr/ucsd/fullcit?p9952654.
Pełny tekst źródłaElwell, Clifford Alastair. "The development of magnetic tunnel junction fabrication techniques". Thesis, University of Cambridge, 2002. https://www.repository.cam.ac.uk/handle/1810/34611.
Pełny tekst źródłaKirk, Daniel James. "A TEM Study of Magnetic Tunnel Junctions and Magnetic Materials". Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491270.
Pełny tekst źródłaTemple, Rowan Caradoc. "Spin accumulation and transport studied in double magnetic tunnel junctions". Thesis, University of Leeds, 2014. http://etheses.whiterose.ac.uk/8259/.
Pełny tekst źródłaSoole, Julian B. D. "Surface plasmon effects in planar metal-oxide-metal tunnel junctions". Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.236032.
Pełny tekst źródłaYang, Hangfu [Verfasser]. "Thermal and magnetoelastic effects in magnetic tunnel junctions / Hangfu Yang". Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2018. http://d-nb.info/1172414521/34.
Pełny tekst źródłaZhang, Zhaohui. "Spin-dependent electrical and thermal transport in magnetic tunnel junctions". APS, 2012. http://hdl.handle.net/1993/31947.
Pełny tekst źródłaFebruary 2017
Lytvynenko, Ia M. "Magnetic tunnel junctions as a storage element for memory device". Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/35037.
Pełny tekst źródłaNewhouse-Illige, T., Yaohua Liu, M. Xu, Hickey D. Reifsnyder, A. Kundu, H. Almasi, Chong Bi i in. "Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions". NATURE PUBLISHING GROUP, 2017. http://hdl.handle.net/10150/624333.
Pełny tekst źródłaGokce, Aisha. "Low frequency current and resistance fluctuations in magnetic tunnel junctions". Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 203 p, 2009. http://proquest.umi.com/pqdweb?did=1896928791&sid=9&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Pełny tekst źródłaChouial, Baghdadi. "Investigation of superconductor tunnel junctions on YBCO high temperature superconductor". Thesis, University of Bath, 1991. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303029.
Pełny tekst źródłaBonholzer, Michael [Verfasser], Marius [Akademischer Betreuer] Grundmann, Marius [Gutachter] Grundmann i Georg [Gutachter] Schmidt. "Magnetic Tunnel Junctions based on spinel ZnxFe3-xO4 : Magnetic Tunnel Junctions based onspinel ZnxFe3-xO4 / Michael Bonholzer ; Gutachter: Marius Grundmann, Georg Schmidt ; Betreuer: Marius Grundmann". Leipzig : Universitätsbibliothek Leipzig, 2016. http://d-nb.info/1240629737/34.
Pełny tekst źródłaClaude, Stephane Marie Xavier. "Lead alloy superconducting tunnel junctions for sub-millimetre wave hetrodyne detection". Thesis, Queen Mary, University of London, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.243314.
Pełny tekst źródłaLadak, Sam. "Hot electron transport and barrier oxidation effects in magnetic tunnel junctions". Thesis, University of Exeter, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425319.
Pełny tekst źródłaTanaka, Clifford T. (Clifford Takashi). "Investigation of half-metallic ferromagnetism in NiMnSb spin dependent tunnel junctions". Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/84778.
Pełny tekst źródłaVita.
Includes bibliographical references (p. 129-134).
by Clifford Takashi Tanaka.
Ph.D.
Jiang, Xiuguang. "Experimental study of discrete resistance fluctuations in normal metal tunnel junctions /". The Ohio State University, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487758680161861.
Pełny tekst źródłaPatibandla, Sridhar. "Spin transport studies in nanoscale spin valves and magnetic tunnel junctions". VCU Scholars Compass, 2008. http://scholarscompass.vcu.edu/etd/1611.
Pełny tekst źródła