Artykuły w czasopismach na temat „Triple gate transistor”
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Grossl Bade, Tamiris, Hassan Hamad, Adrien Lambert, Hervé Morel i Dominique Planson. "Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs". Electronics 12, nr 11 (3.06.2023): 2529. http://dx.doi.org/10.3390/electronics12112529.
Pełny tekst źródłaCho, Seong-Kun, i Won-Ju Cho. "Highly Sensitive and Transparent Urea-EnFET Based Point-of-Care Diagnostic Test Sensor with a Triple-Gate a-IGZO TFT". Sensors 21, nr 14 (12.07.2021): 4748. http://dx.doi.org/10.3390/s21144748.
Pełny tekst źródłaConde, Jorge E., Antonio Cereira i M. Estrada. "Distortion Analysis of Triple-Gate Transistor in Saturation". ECS Transactions 9, nr 1 (19.12.2019): 67–73. http://dx.doi.org/10.1149/1.2766875.
Pełny tekst źródłaGay, R., V. Della Marca, H. Aziza, P. Laine, A. Regnier, S. Niel i A. Marzaki. "Gate stress reliability of a novel trench-based Triple Gate Transistor". Microelectronics Reliability 126 (listopad 2021): 114233. http://dx.doi.org/10.1016/j.microrel.2021.114233.
Pełny tekst źródłaSHAHHOSEINI, ALI, KAMYAR SAGHAFI, MOHAMMAD KAZEM MORAVVEJ-FARSHI i RAHIM FAEZ. "TRIPLE-TUNNEL JUNCTION SINGLE ELECTRON TRANSISTOR (TTJ-SET)". Modern Physics Letters B 25, nr 17 (10.07.2011): 1487–501. http://dx.doi.org/10.1142/s0217984911026346.
Pełny tekst źródłaPandey, Neeta, Kirti Gupta i Bharat Choudhary. "New Proposal for MCML Based Three-Input Logic Implementation". VLSI Design 2016 (19.09.2016): 1–10. http://dx.doi.org/10.1155/2016/8712768.
Pełny tekst źródłaManikandan, S., P. Suveetha Dhanaselvam i M. Karthigai Pandian. "A Quasi 2-D Electrostatic Potential and Threshold Voltage Model for Junctionless Triple Material Cylindrical Surrounding Gate Si Nanowire Transistor". Journal of Nanoelectronics and Optoelectronics 16, nr 2 (1.02.2021): 318–23. http://dx.doi.org/10.1166/jno.2021.2951.
Pełny tekst źródłade Araujo, Gustavo Vinicius, Joao Martino i Paula Agopian. "Operational Transconductance Amplifier Designed with Experimental Omega-Gate Nanowire SOI MOSFETs". ECS Meeting Abstracts MA2023-01, nr 33 (28.08.2023): 1861. http://dx.doi.org/10.1149/ma2023-01331861mtgabs.
Pełny tekst źródłaMüller, M. R., A. Gumprich, F. Schütte, K. Kallis, U. Künzelmann, S. Engels, C. Stampfer, N. Wilck i J. Knoch. "Buried triple-gate structures for advanced field-effect transistor devices". Microelectronic Engineering 119 (maj 2014): 95–99. http://dx.doi.org/10.1016/j.mee.2014.02.001.
Pełny tekst źródłaFui, Tan Chun, Ajay Kumar Singh i Lim Way Soong. "Performance Characterization of Dual-Metal Triple- Gate-Dielectric (DM_TGD) Tunnel Field Effect Transistor (TFET)". International Journal of Robotics and Automation Technology 8 (31.12.2021): 83–89. http://dx.doi.org/10.31875/2409-9694.2021.08.8.
Pełny tekst źródłaDarwin, S., i T. S. Arun Samuel. "Mathematical Modeling of Junctionless Triple Material Double Gate MOSFET for Low Power Applications". Journal of Nano Research 56 (luty 2019): 71–79. http://dx.doi.org/10.4028/www.scientific.net/jnanor.56.71.
Pełny tekst źródłaGowthami, Yadala, Bukya Balaji i Karumuri Srinivasa Rao. "Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor". International Journal of Electrical and Computer Engineering (IJECE) 13, nr 4 (1.08.2023): 3788. http://dx.doi.org/10.11591/ijece.v13i4.pp3788-3795.
Pełny tekst źródłaGay, R., V. Della Marca, H. Aziza, M. Mantelli, F. Trenteseaux, F. La Rosa, A. Regnier, S. Niel i A. Marzaki. "A Novel Trench-Based Triple Gate Transistor With Enhanced Driving Capability". IEEE Electron Device Letters 42, nr 6 (czerwiec 2021): 832–34. http://dx.doi.org/10.1109/led.2021.3076609.
Pełny tekst źródłaLim, Sang Woo, i Brian Winstead. "Surface Preparation for Transistor Performance Improvement in Triple Gate Oxide Integration". Journal of The Electrochemical Society 152, nr 9 (2005): G714. http://dx.doi.org/10.1149/1.1973245.
Pełny tekst źródłaMolaei Imen Abadi, Rouzbeh, i Seyed Ali Sedigh Ziabari. "A Comparative Numerical Study of Junctionless and p-i-n Tunneling Carbon Nanotube Field Effect Transistor". Journal of Nano Research 45 (styczeń 2017): 55–75. http://dx.doi.org/10.4028/www.scientific.net/jnanor.45.55.
Pełny tekst źródłaZakarya, Kourdi, i Abdelkhader Hamdoun. "A modeling and performance of the triple field plate HEMT". International Journal of Power Electronics and Drive Systems (IJPEDS) 10, nr 1 (1.03.2019): 398. http://dx.doi.org/10.11591/ijpeds.v10.i1.pp398-405.
Pełny tekst źródłaGowthami, Y., B.Balaji i K. Srinivasa Rao. "Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics". Journal of Integrated Circuits and Systems 18, nr 1 (22.05.2023): 1–8. http://dx.doi.org/10.29292/jics.v18i1.657.
Pełny tekst źródłaDubey, Shashank Kumar, i Aminul Islam. "Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications". Physica Scripta 97, nr 3 (10.02.2022): 034003. http://dx.doi.org/10.1088/1402-4896/ac50c3.
Pełny tekst źródłaSamuel, T. S. Arun, i S. Komalavalli. "Analytical Modelling and Simulation of Triple Material Quadruple Gate Tunnel Field Effect Transistors". Journal of Nano Research 54 (sierpień 2018): 146–57. http://dx.doi.org/10.4028/www.scientific.net/jnanor.54.146.
Pełny tekst źródłaPizzanelli, Riccardo, Rhaycen Prates, Marcelo Antonio Pavanello i Michelly de Souza. "(Digital Presentation) Comparison of Width and Temperature Influence on DIBL Effect in Junctionless and Inversion Mode Nanowire MOSFETs". ECS Meeting Abstracts MA2023-01, nr 33 (28.08.2023): 1872. http://dx.doi.org/10.1149/ma2023-01331872mtgabs.
Pełny tekst źródłaLiu, Fayong, Kouta Ibukuro, Muhammad Khaled Husain, Zuo Li, Joseph Hillier, Isao Tomita, Yoshishige Tsuchiya, Harvey Rutt i Shinichi Saito. "Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate". Nanotechnology 29, nr 47 (25.09.2018): 475201. http://dx.doi.org/10.1088/1361-6528/aadfa6.
Pełny tekst źródłaEt.al, R. Jeyarohini. "A performance Analysis of DM-DG and TM-DG TFETs Analytical Models for Low Power Applications". Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, nr 3 (10.04.2021): 4642–51. http://dx.doi.org/10.17762/turcomat.v12i3.1874.
Pełny tekst źródłaVenkatesh, M., i N. B. Balamurugan. "New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor". Superlattices and Microstructures 130 (czerwiec 2019): 485–98. http://dx.doi.org/10.1016/j.spmi.2019.05.016.
Pełny tekst źródłaLima, Vitor Gonçalves, Guilherme Paim, Rodrigo Wuerdig, Leandro Mateus Giacomini Rocha, Leomar Da Rosa Júnior, Felipe Marques, Vinicius Valduga, Eduardo Costa, Rafael Soares i Sergio Bampi. "Enhancing Side Channel Attack-Resistance of the STTL Combining Multi-Vt Transistors with Capacitance and Current Paths Counterbalancing". Journal of Integrated Circuits and Systems 15, nr 1 (26.05.2020): 1–11. http://dx.doi.org/10.29292/jics.v15i1.100.
Pełny tekst źródłaKumar, A., A. Chaudhry, V. Kumar i V. Sharma. "A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor". Journal of Nano- and Electronic Physics 8, nr 4(1) (2016): 04042–1. http://dx.doi.org/10.21272/jnep.8(4(1)).04042.
Pełny tekst źródłaChien, Feng-Tso, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen i Hsien-Chin Chiu. "150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers". Micromachines 11, nr 5 (15.05.2020): 504. http://dx.doi.org/10.3390/mi11050504.
Pełny tekst źródłaKoide, Yasuo. "(Invited) Leading-Edge Diamond FET, MEMS, and Photodetector Devices". ECS Meeting Abstracts MA2023-02, nr 30 (22.12.2023): 1541. http://dx.doi.org/10.1149/ma2023-02301541mtgabs.
Pełny tekst źródłaKashem, Md Tashfiq Bin, i Samia Subrina. "Computational Analysis of Joule Heating Effect in Triple Material Gate AlGaN/GaN High Electron Mobility Transistor". ECS Transactions 102, nr 3 (7.05.2021): 43–52. http://dx.doi.org/10.1149/10203.0043ecst.
Pełny tekst źródłaChawla, Tulika, Mamta Khosla i Balwinder Raj. "Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor". Microelectronics Journal 114 (sierpień 2021): 105125. http://dx.doi.org/10.1016/j.mejo.2021.105125.
Pełny tekst źródłaKashem, Md Tashfiq Bin, i Samia Subrina. "Computational Analysis of Joule Heating Effect in Triple Material Gate AlGaN/GaN High Electron Mobility Transistor". ECS Meeting Abstracts MA2021-01, nr 33 (30.05.2021): 1074. http://dx.doi.org/10.1149/ma2021-01331074mtgabs.
Pełny tekst źródłaMahdia, Marjana, i Quazi Deen Mohd Khosru. "Analytical modeling of transport phenomena in heterojunction triple metal gate all around tunneling field effect transistor". AIP Advances 10, nr 9 (1.09.2020): 095125. http://dx.doi.org/10.1063/5.0024864.
Pełny tekst źródłaJeon, Jin-Hyeok, i Won-Ju Cho. "Triple Gate Polycrystalline-Silicon-Based Ion-Sensitive Field-Effect Transistor for High-Performance Aqueous Chemical Application". IEEE Electron Device Letters 40, nr 2 (luty 2019): 318–20. http://dx.doi.org/10.1109/led.2018.2890741.
Pełny tekst źródłaMushtaq, Umar, Leo Raj Solay, S. Intekhab Amin i Sunny Anand. "Design and Analog Performance Analysis of Triple Material Gate Based Doping-Less Tunnel Field Effect Transistor". Journal of Nanoelectronics and Optoelectronics 14, nr 8 (1.08.2019): 1177–82. http://dx.doi.org/10.1166/jno.2019.2662.
Pełny tekst źródłaBoukortt, Nour El Islam, Baghdad Hadri, Alina Caddemi, Giovanni Crupi i Salvatore Patane. "Temperature Dependence of Electrical Parameters of Silicon-on-Insulator Triple Gate n-Channel Fin Field Effect Transistor". Transactions on Electrical and Electronic Materials 17, nr 6 (25.12.2016): 329–34. http://dx.doi.org/10.4313/teem.2016.17.6.329.
Pełny tekst źródłaShringi, Shivangi, Ashish Raman, Sarabdeep Singh i Naveen Kumar. "Design and Analysis of Source Engineered with High Electron Mobility Material Triple Gate Junctionless Field Effect Transistor". Journal of Nanoelectronics and Optoelectronics 14, nr 6 (1.06.2019): 825–32. http://dx.doi.org/10.1166/jno.2019.2558.
Pełny tekst źródłaSaha, Priyanka, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar i Moath Alathbah. "The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length". Nanomaterials 13, nr 23 (23.11.2023): 3008. http://dx.doi.org/10.3390/nano13233008.
Pełny tekst źródłaBaral, Biswajit, Aloke Kumar Das, Debashis De i Angsuman Sarkar. "An analytical model of triple-material double-gate metal-oxide-semiconductor field-effect transistor to suppress short-channel effects". International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 29, nr 1 (9.01.2015): 47–62. http://dx.doi.org/10.1002/jnm.2044.
Pełny tekst źródłaChoudhury, Sagarika, Krishna Lal Baishnab, Koushik Guha, Zoran Jakšić, Olga Jakšić i Jacopo Iannacci. "Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity". Chemosensors 11, nr 5 (22.05.2023): 312. http://dx.doi.org/10.3390/chemosensors11050312.
Pełny tekst źródłaSharma, Dheeraj, Bhagwan Ram Raad, Dharmendra Singh Yadav, Pravin Kondekar i Kaushal Nigam. "Two‐dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field‐effect transistor". Micro & Nano Letters 12, nr 1 (styczeń 2017): 11–16. http://dx.doi.org/10.1049/mnl.2016.0351.
Pełny tekst źródłaVenkatesh, M., M. Suguna i N. B. Balamurugan. "Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications". Journal of Electronic Materials 48, nr 10 (6.08.2019): 6724–34. http://dx.doi.org/10.1007/s11664-019-07492-0.
Pełny tekst źródłaPopov, Vladimir P., Valentin A. Antonov, Andrey V. Miakonkikh i Konstantin V. Rudenko. "Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire". Nanomaterials 12, nr 19 (28.09.2022): 3394. http://dx.doi.org/10.3390/nano12193394.
Pełny tekst źródłaBorghei, Moein, i Mona Ghassemi. "Characterization of Partial Discharge Activities in WBG Power Converters under Low-Pressure Condition". Energies 14, nr 17 (30.08.2021): 5394. http://dx.doi.org/10.3390/en14175394.
Pełny tekst źródłaChoi, Sung-Hwan, Hee-Sun Shin i Min-Koo Han. "Novel F-Shaped Triple-Gate Structure for Suppression of Kink Effect and Improvement of Hot Carrier Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistor". Japanese Journal of Applied Physics 48, nr 4 (20.04.2009): 04C155. http://dx.doi.org/10.1143/jjap.48.04c155.
Pełny tekst źródłaTsutsumi, Toshiyuki. "Very low and broad threshold voltage fluctuation caused by ion implantation to silicon-on-insulator triple-gate fin-type field effect transistor using three-dimensional process and device simulations". Japanese Journal of Applied Physics 56, nr 6S1 (16.05.2017): 06GF12. http://dx.doi.org/10.7567/jjap.56.06gf12.
Pełny tekst źródłaNA, KYOUNG-IL, JUNG-HEE LEE, SORIN CRISTOLOVEANU, YOUNG-HO BAE, PAUL PATRUNO i WADE XIONG. "SHORT CHANNEL, FLOATING BODY, AND 3D COUPLING EFFECTS IN TRIPLE-GATE MOSFET". International Journal of High Speed Electronics and Systems 18, nr 04 (grudzień 2008): 773–82. http://dx.doi.org/10.1142/s0129156408005758.
Pełny tekst źródłaYang, J. W., i J. G. Fossum. "On the Feasibility of Nanoscale Triple-Gate CMOS Transistors". IEEE Transactions on Electron Devices 52, nr 6 (czerwiec 2005): 1159–64. http://dx.doi.org/10.1109/ted.2005.848109.
Pełny tekst źródłaCRISTOLOVEANU, SORIN, ROMAIN RITZENTHALER, AKIKO OHATA i OLIVIER FAYNOT. "3D Size Effects in Advanced SOI Devices". International Journal of High Speed Electronics and Systems 16, nr 01 (marzec 2006): 9–30. http://dx.doi.org/10.1142/s0129156406003515.
Pełny tekst źródłaTeixeira, Fernando F., Caio C. M. Bordallo, Marcilei A. Guazzelli, Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen i Cor Clayes. "Parasitic Conduction Response to X-ray Radiation in Unstrained and Strained Triple-Gate SOI MuGFETs". Journal of Integrated Circuits and Systems 9, nr 2 (28.12.2014): 97–102. http://dx.doi.org/10.29292/jics.v9i2.394.
Pełny tekst źródłaDoria, Rodrigo T., Renan D. Trevisoli, Michelly De Souza i Marcelo Antonio Pavanello. "Impact of the Series Resistance in the I-V Characteristics of Junctionless Nanowire Transistors and its dependence on the Temperature". Journal of Integrated Circuits and Systems 7, nr 2 (27.12.2012): 121–29. http://dx.doi.org/10.29292/jics.v7i2.364.
Pełny tekst źródłaPark, Taeho, Kyoungah Cho i Sangsig Kim. "Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors". Nanomaterials 14, nr 6 (9.03.2024): 493. http://dx.doi.org/10.3390/nano14060493.
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