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Artykuły w czasopismach na temat "Transistors"
Vukic, Vladimir, i Predrag Osmokrovic. "Power lateral pnp transistor operating with high current density in irradiated voltage regulator". Nuclear Technology and Radiation Protection 28, nr 2 (2013): 146–57. http://dx.doi.org/10.2298/ntrp1302146v.
Pełny tekst źródłaKnyaginin, D. A., E. A. Kulchenkov, S. B. Rybalka i A. A. Demidov. "Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89". Journal of Physics: Conference Series 2086, nr 1 (1.12.2021): 012057. http://dx.doi.org/10.1088/1742-6596/2086/1/012057.
Pełny tekst źródłaHorng. "Thin Film Transistor". Crystals 9, nr 8 (9.08.2019): 415. http://dx.doi.org/10.3390/cryst9080415.
Pełny tekst źródłaBLALOCK, BENJAMIN J., SORIN CRISTOLOVEANU, BRIAN M. DUFRENE, F. ALLIBERT i MOHAMMAD M. MOJARRADI. "THE MULTIPLE-GATE MOS-JFET TRANSISTOR". International Journal of High Speed Electronics and Systems 12, nr 02 (czerwiec 2002): 511–20. http://dx.doi.org/10.1142/s0129156402001423.
Pełny tekst źródłaArunabala, Dr C. "Design of a 4 bit Arithmetic and Logical unit with Low Power and High Speed". International Journal of Innovative Technology and Exploring Engineering 10, nr 5 (30.03.2021): 87–92. http://dx.doi.org/10.35940/ijitee.e8660.0310521.
Pełny tekst źródłaTappertzhofen, S., L. Nielen, I. Valov i R. Waser. "Memristively programmable transistors". Nanotechnology 33, nr 4 (5.11.2021): 045203. http://dx.doi.org/10.1088/1361-6528/ac317f.
Pełny tekst źródłaXie, Fangqing, Maryna N. Kavalenka, Moritz Röger, Daniel Albrecht, Hendrik Hölscher, Jürgen Leuthold i Thomas Schimmel. "Copper atomic-scale transistors". Beilstein Journal of Nanotechnology 8 (1.03.2017): 530–38. http://dx.doi.org/10.3762/bjnano.8.57.
Pełny tekst źródłaYarmukhamedov, A., A. Zhabborov i B. Turimbetov. "EXPERIMENTAL RESEARCH AND COMPUTER SIMULATION OF MULTI-CASCADE COMPOSITE TRANSISTORS FOR STABILIZING THE OPERATING MODE OF OUTPUT CASCADES OF RADIO ENGINEERING DEVICES". Technical science and innovation 2019, nr 1 (11.06.2019): 33–42. http://dx.doi.org/10.51346/tstu-01.18.2.-77-0009.
Pełny tekst źródłaHebali, Mourad, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi i Abdelkader Saidane. "A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model". Journal of Electrical Engineering 70, nr 2 (1.04.2019): 145–51. http://dx.doi.org/10.2478/jee-2019-0021.
Pełny tekst źródłaBalti, M., D. Pasquet i A. Samet. "PROPAGATION EFFECTS ON Z PARAMETERS IN AN FET EQUIVALENT CIRCUIT". SYNCHROINFO JOURNAL 7, nr 5 (2021): 21–25. http://dx.doi.org/10.36724/2664-066x-2021-7-5-21-25.
Pełny tekst źródłaRozprawy doktorskie na temat "Transistors"
Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors". Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.
Pełny tekst źródłaCerutti, Robin. "Transistors à grilles multiples adaptés à la conception". Grenoble INPG, 2006. http://www.theses.fr/2006INPG0174.
Pełny tekst źródłaDouble Gate transistors are nowadays considered as the best candidate for the 32 and 22 nm technological node using silicon technologies. Within the amount of multi-gate technologies that show up ( Finfet, TriGate, Planar DG,. . ) , it is mandatory not only to be able to create transistors but also to define simple architectures that are directly compatible with circuit designs. This phd is the result of a work linking directly design and integration in order to process new tri-dimensionnal technology based on SON technique ( 'Silicon On Nothing'). New transistors have bee invented and processed and morphological and electrical results are shown in order to prove the potential of our components within the future technological platforms
Lee, Yi-Che. "Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53472.
Pełny tekst źródłaOzório, Maíza da Silva. "Estudo de compósitos de tips-pentaceno para aplicações em transistores /". Presidente Prudente, 2016. http://hdl.handle.net/11449/152818.
Pełny tekst źródłaBanca: Edson Laureto
Banca: Carlos José Leopoldo Constantino
Resumo: Um dos atuais desafios da eletrônica orgânica é a obtenção de semicondutores com alta mobilidade que forme filmes com boa morfologia quando depositado/impresso por solução, resultando em boa uniformidade e reprodutibilidade dos dispositivos. O poli(3- hexiltiofeno) (P3HT) e o 6,13-(triisopropilsililetinil)pentaceno (TP) estão entre os semicondutores orgânicos mais utilizados. O TP tem como característica a formação de estruturas cristalinas, e desse modo, apresenta mobilidade muito maior que o P3HT, no entanto é difícil de obter filmes com boa morfologia e resultados reprodutíveis. Visando um material semicondutor que apresente mobilidade significativamente melhor que a do P3HT e uma morfologia melhor que a do TP, estudou-se compósitos a partir da mistura destes materiais (P3HT:TP) para aplicação em transistores orgânicos de efeito de campo (OFETs), utilizando óxido de alumínio anodizado (Al2O3) tratado com HMDS como dielétrico de gate. Para análise da morfologia dos compósitos semicondutores de P3HT:TP usou-se microscopia eletrônica de varredura (MEV), microscopia de força atômica (AFM) e microscopia óptica (MO). Análise óptica foi feita através de medidas de fotoluminescência (PL) e de tempo de decaimento por fotoluminescência. Espectroscopia Raman e FTIR foram utilizadas para análises estruturais. No modo transistor a caracterização foi feita através de curvas de saída e transferência. Através das caracterizações elétricas determinou-se os parâmetros do semicondutor, tais ... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: One of the current challenges of organic electronics is the development of semiconductors with high mobility to form films with good morphology when deposited/printed by solution, resulting in good uniformity and reproducibility of the devices. The poly (3-hexylthiophene) (P3HT) and 6,13-(triisopropilsililetinil)pentacene (TP) are among the most widely used organic semiconductors. The TP films are constituted by crystalline lamellar structures, and thus has greater mobility than the P3HT, however, it is difficult handling it to obtain films with good morphology and reproducible results. Targeting a semiconductor material with significantly better mobility than that of P3HT and better morphology than that of TP, we studied composites of these materials (P3HT: TP) for using in organic field effect transistors (OFETs). The transistor was prepared depositing the solution of the semiconductor composite, by spin coating, on the aluminium oxide, obtained by anodization and treated with HMDS, followed by the thermal evaporation of gold on the top, to form the drain and source electrodes. For analysis of the morphology of the composites semiconductors (P3HT: TP) was used scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical microscopy (OM). Optical analysis was performed using photoluminescence (PL) measurements and decay time by photoluminescence. FTIR and Raman spectroscopy were used to structural analysis. In mode transistor, characterization was performed u... (Complete abstract click electronic access below)
Mestre
Ricci, Simona. "Liquid-gated transistors for biosensing applications". Doctoral thesis, Universitat Autònoma de Barcelona, 2020. http://hdl.handle.net/10803/670786.
Pełny tekst źródłaEn esta tesis, hemos estudiado diferentes aspectos relacionados con los transistores orgánicos activados por líquido, en particular los transistores de efecto de campo orgánicos activados por electrolitos (EGOFET) y los transistores electroquímicos orgánicos (OECT). Los dispositivos EGOFET se fabricaron depositando a partir de soluciones pequeñas moléculas de semiconductores orgánicos (OSC) mezclados con polímeros aislantes, a través de la técnica de Bar-assisted meniscus shearing (BAMS). BAMS es una técnica rápida, de bajo costo y escalable que permite la formación de películas finas cristalinas y uniformes. Los EGOFET se estudiaron para el desarrollo de un biosensor para la detección de un biomarcador de enfermedades neurodegenerativas, incluidas las enfermedades de Parkinson, es decir, la alpha-sinucleína. Además, se emplearon dispositivos OECT para la biodetección de α-sinucleína, para estudiar el posible uso de estos dispositivos como inmunosensores, campo que aún está menos explorado en la literatura. Finalmente, se fabricó un EGOFET totalmente flexible basado en una pequeña molécula semiconductora mezclada con un polímero aislante y se evaluó su respuesta eléctrica bajo tensión mecánica, por primera vez, hasta donde sabemos, para dispositivos EGOFET.
In this thesis, we have studied different aspects related to liquid-gated organic transistors, in particular electrolyte-gated organic field-effect transistors (EGOFETs) and organic electrochemical transistors (OECTs). EGOFET devices were fabricated by depositing from solution small molecules organic semiconductors (OSC) blended with insulating polymers, through the bar-assisted meniscus-shearing technique (BAMS). BAMS is a rapid, low-cost and scalable technique that allows the formation of crystalline and uniform thin films. The EGOFETs were studied for the development of a biosensor for the detection of a biomarker for neurodegenerative diseases, including Parkinson’s diseases, namely α-synuclein. Further, OECT devices were employed for the biosensing of α-synuclein, to give an insight into the possible use of these devices as immunosensors, field which is still less explored in literature. Finally, an all-flexible EGOFET based on a small molecule OSC blended with an insulating polymer thin film, was fabricated and its electrical response under bending strain was evaluated, for the first time, as far as we know, for liquid-gated OFETs.
Tachi, Kiichi. "Etude physique et technologique d'architectures de transistors MOS à nanofils". Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00721968.
Pełny tekst źródłaAcosta, Sandra Massulini. "Projeto de amplificadores operacionais CMOS utilizando transistores compostos em "sea-of-transistors"". reponame:Repositório Institucional da UFSC, 1997. https://repositorio.ufsc.br/handle/123456789/111588.
Pełny tekst źródłaHuang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.
Pełny tekst źródłaXu, Ziyan Niu Guofu. "Low temperature modeling of I-V characteristics and RF small signal parameters of SiGe HBTs". Auburn, Ala., 2009. http://hdl.handle.net/10415/1925.
Pełny tekst źródłaKrumm, Jürgen. "Circuit analysis methodology for organic transistors = Methodik zur Schaltungsanalyse für organische Transistoren". kostenfrei, 2008. http://deposit.d-nb.de/cgi-bin/dokserv?idn=989071553.
Pełny tekst źródłaKsiążki na temat "Transistors"
Welter, Michael. Transistor dictionary: Bipolar transistors. Bonn: International Thomson, 1996.
Znajdź pełny tekst źródłaIntermetall, ITT. Transistors. [Germany]: ITT Intermetall, 1996.
Znajdź pełny tekst źródłaSemiconductors, ITT. Transistors. Freiburg: ITT Semiconductors, 1987.
Znajdź pełny tekst źródłaSemiconductors, ITT. Transistors. Freiburg: ITT Semiconductors, 1992.
Znajdź pełny tekst źródłaUnderstanding Modern Transistors and Diodes. Cambridge: Cambridge University Press, 2010.
Znajdź pełny tekst źródła(Firm), Knovel, red. Understanding modern transistors and diodes. Cambridge: Cambridge University Press, 2010.
Znajdź pełny tekst źródłaComponents, Philips. PowerMOS transistors. [London]: Philips Components, 1988.
Znajdź pełny tekst źródła1932-, Granberg Helge, red. Radio frequency transistors: Principles and practical applications. Wyd. 2. Boston: Newnes, 2001.
Znajdź pełny tekst źródła1932-, Granberg Helge, red. Radio frequency transistors: Principles and practical applications. Boston: Butterworth-Heinemann, 1993.
Znajdź pełny tekst źródłaSemiconductors, Philips. RF wideband transistors, video transistors and modules: Data handbook. Eindhoven: Philips Semiconductors, 1993.
Znajdź pełny tekst źródłaCzęści książek na temat "Transistors"
Julien, Levisse Alexandre Sébastien, Xifan Tang i Pierre-Emmanuel Gaillardon. "Innovative Memory Architectures Using Functionality Enhanced Devices". W Emerging Computing: From Devices to Systems, 47–83. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7487-7_3.
Pełny tekst źródłaJain, S., M. Willander i R. Van Overstraeten. "Transistors". W Compound Semiconductors Strained Layers and Devices, 245–64. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/978-1-4615-4441-8_8.
Pełny tekst źródłaRazeghi, Manijeh. "Transistors". W Technology of Quantum Devices, 173–207. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-1056-1_5.
Pełny tekst źródłaGrundmann, Marius. "Transistors". W Graduate Texts in Physics, 713–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13884-3_23.
Pełny tekst źródłaBrand, John R. "Transistors". W Handbook of Electronics Formulas, Symbols, and Definitions, 201–52. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4684-6491-7_2.
Pełny tekst źródłaStoecker, W. F., i P. A. Stoecker. "Transistors". W Microcomputer Control of Thermal and Mechanical Systems, 45–60. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-6560-0_4.
Pełny tekst źródłaPowell, Richard F. "Transistors". W Testing Active and Passive Electronic Components, 103–30. Boca Raton: Routledge, 2022. http://dx.doi.org/10.1201/9780203737255-8.
Pełny tekst źródłaWinnacker, Albrecht. "Transistors". W The Physics Behind Semiconductor Technology, 199–220. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-10314-8_13.
Pełny tekst źródłaRobinson, Kevin. "Transistors". W Practical Audio Electronics, 291–314. Abingdon, Oxon : Routledge, an imprint of the Taylor & Francis Group, 2020.: Focal Press, 2020. http://dx.doi.org/10.4324/9780429343056-17.
Pełny tekst źródłaVerhaevert, Jo. "Transistors". W Fundamental Electrical and Electronic Principles, 184–99. Wyd. 4. London: Routledge, 2023. http://dx.doi.org/10.1201/9781003308294-7.
Pełny tekst źródłaStreszczenia konferencji na temat "Transistors"
(Jane) Li, Yuanjing, John Aguada, Jiafang Lu, Jessica Yang, Roy Ng i Howard Lee Marks. "Capturing Defects in Flip-Chip CMOS Devices Using Backside EBAC Technique and SEM Microscopy". W ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0118.
Pełny tekst źródłaMoiseev, Grigor. "MODELLING OF STRUCTURE BASED ON JUNCTIONLESS TRANSISTOR IN TCAD SYSTEM". W International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1662.silicon-2020/397-399.
Pełny tekst źródłaDesplats, Romain, Alban Eral, Felix Beaudoin, Philippe Perdu, Alain Chion, Ketan Shah i Ted Lundquist. "IC Diagnostic with Time Resolved Photon Emission and CAD Auto-Channeling". W ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0045.
Pełny tekst źródłaAnholt, Robert, R. Dettmer, C. Bozada, C. A. Cerny, G. Desalvo, J. Ebel, J. Gillespie i in. "Self Heating in III-V Transistors". W ASME 1996 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1996. http://dx.doi.org/10.1115/imece1996-1330.
Pełny tekst źródłaTeo, J. K. J., C. M. Chua, L. S. Koh i J. C. H. Phang. "Characterization of MOS Transistors Using Dynamic Backside Reflectance Modulation Technique". W ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0170.
Pełny tekst źródłaRuprecht, Michael W., Shengmin Wen i Rolf-P. Vollertsen. "Sample Preparation for Vertical Transistors in DRAM". W ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0307.
Pełny tekst źródłaKim, Jong Eun, Jong Hak Lee, Jong Kyu Cho, Sang Hyun Ban, Chang Su Park, Nam Il Kim, Dae Woo Kim i in. "Analysis of SRAM Function Failure Due to Unformed CoSi2 Using Nanoprober and Transmission Electron Microscopy". W ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0137.
Pełny tekst źródłaPlante, J., E. Allen i G. Lum. "Characterization of Californium – 252 (252Cf) as a Laboratory Source of Radiation for Testing and Analysis of Semiconductor Devices". W ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0171.
Pełny tekst źródłaSuwa, Tohru, i Hamid Hadim. "Multi-Packaging-Level Thermal Modeling Technique for Silicon Chip Transistors". W ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-11815.
Pełny tekst źródłaCampbell, Ann N., Paiboon Tangyunyong, Jeffrey R. Jessing, Charles E. Hembree, Daniel M. Fleetwood, Scot E. Swanson, Jerry M. Soden, Nicholas Antoniou, William E. Vanderlinde i Marsha T. Abramo. "Focused Ion Beam Induced Effects on MOS Transistor Parameters". W ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0273.
Pełny tekst źródłaRaporty organizacyjne na temat "Transistors"
Kastner, Marc A. Single Electron Transistors. Fort Belvoir, VA: Defense Technical Information Center, październik 2004. http://dx.doi.org/10.21236/ada427420.
Pełny tekst źródłaMorkoc, Hadis. High Speed Heterostructure Transistors. Fort Belvoir, VA: Defense Technical Information Center, maj 1995. http://dx.doi.org/10.21236/ada301117.
Pełny tekst źródłaTsui, D. C. Double Superlattice GaAs IR Transistors. Fort Belvoir, VA: Defense Technical Information Center, sierpień 1995. http://dx.doi.org/10.21236/ada300606.
Pełny tekst źródłaXing, Huili. Ideal Channel Field Effect Transistors. Fort Belvoir, VA: Defense Technical Information Center, marzec 2010. http://dx.doi.org/10.21236/ada518256.
Pełny tekst źródłaKastner, Marc A. Electron Spins in Single Electron Transistors. Fort Belvoir, VA: Defense Technical Information Center, styczeń 2009. http://dx.doi.org/10.21236/ada500634.
Pełny tekst źródłaHo, P. P., i R. R. Alfano. All-optical Transistors for Ultrafast Computing. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2001. http://dx.doi.org/10.21236/ada402850.
Pełny tekst źródłaCooper, James A., i Jr. Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications. Fort Belvoir, VA: Defense Technical Information Center, marzec 2003. http://dx.doi.org/10.21236/ada413135.
Pełny tekst źródłaLee, Charles Y., i Klaus Dimmler. Organic Based Flexible Transistors and Electronic Device. Fort Belvoir, VA: Defense Technical Information Center, maj 2005. http://dx.doi.org/10.21236/ada434601.
Pełny tekst źródłaLussem, Bjorn. Finding the Equilibrium of Organic Electrochemical Transistors. Kent State University, 2020. http://dx.doi.org/10.21038/blus.2020.0101.
Pełny tekst źródłaDodabalapur, Ananth. High Performance Crystalline Organic Transistors and Circuit. Fort Belvoir, VA: Defense Technical Information Center, październik 2009. http://dx.doi.org/10.21236/ada561601.
Pełny tekst źródła