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Artykuły w czasopismach na temat "THz spintronics"
Wang, Maorong, Yifan Zhang, Leilei Guo, Mengqi Lv, Peng Wang i Xia Wang. "Spintronics Based Terahertz Sources". Crystals 12, nr 11 (18.11.2022): 1661. http://dx.doi.org/10.3390/cryst12111661.
Pełny tekst źródłaHuisman, Thomas Jarik, i Theo Rasing. "THz Emission Spectroscopy for THz Spintronics". Journal of the Physical Society of Japan 86, nr 1 (15.01.2017): 011009. http://dx.doi.org/10.7566/jpsj.86.011009.
Pełny tekst źródłaWalowski, Jakob, i Markus Münzenberg. "Perspective: Ultrafast magnetism and THz spintronics". Journal of Applied Physics 120, nr 14 (14.10.2016): 140901. http://dx.doi.org/10.1063/1.4958846.
Pełny tekst źródłaBuryakov, Arseniy, Pavel Avdeev, Dinar Khusyainov, Nikita Bezvikonnyy, Andreas Coclet, Alexey Klimov, Nicolas Tiercelin, Sergey Lavrov i Vladimir Preobrazhensky. "The Role of Ferromagnetic Layer Thickness and Substrate Material in Spintronic Emitters". Nanomaterials 13, nr 11 (23.05.2023): 1710. http://dx.doi.org/10.3390/nano13111710.
Pełny tekst źródłaTelegin, Andrei, i Yurii Sukhorukov. "Magnetic Semiconductors as Materials for Spintronics". Magnetochemistry 8, nr 12 (29.11.2022): 173. http://dx.doi.org/10.3390/magnetochemistry8120173.
Pełny tekst źródłaWang, Hang-Tian, Hai-Hui Zhao, Liang-Gong Wen, Xiao-Jun Wu, Tian-Xiao Nie i Wei-Sheng Zhao. "High-performance THz emission: From topological insulator to topological spintronics". Acta Physica Sinica 69, nr 20 (2020): 200704. http://dx.doi.org/10.7498/aps.69.20200680.
Pełny tekst źródłaLebrun, Romain. "Take Terahertz for a spin". EU Research Winter 2023, nr 36 (grudzień 2023): 48–49. http://dx.doi.org/10.56181/vfzc7876.
Pełny tekst źródłaAgarwal, Rekha, Sandeep Kumar, Niru Chowdhury, Kacho Imtiyaz Ali Khan, Ekta Yadav, Sunil Kumar i P. K. Muduli. "Strong impact of crystalline twins on the amplitude and azimuthal dependence of THz emission from epitaxial NiO/Pt". Applied Physics Letters 122, nr 8 (20.02.2023): 082403. http://dx.doi.org/10.1063/5.0138949.
Pełny tekst źródłaTsybrii, Z. F., S. N. Danilov, J. V. Gumenjuk-Sichevska, N. N. Mikhailov, S. A. Dvoretskii, E. O. Melezhik i F. F. Sizov. "Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field". Semiconductor Physics, Quantum Electronics and Optoelectronics 24, nr 02 (16.06.2021): 185–91. http://dx.doi.org/10.15407/spqeo24.02.185.
Pełny tekst źródłaBuryakov, Arseniy, Anastasia Gorbatova, Pavel Avdeev, Nikita Bezvikonnyi, Daniil Abdulaev, Alexey Klimov, Sergei Ovcharenko i Elena Mishina. "Controlled Spintronic Emitter of THz Radiation on an Atomically Thin WS2/Silicon Substrate". Metals 12, nr 10 (6.10.2022): 1676. http://dx.doi.org/10.3390/met12101676.
Pełny tekst źródłaRozprawy doktorskie na temat "THz spintronics"
Eivarsson, Nils, Malin Bohman, Emil Grosfilley i Axel Lundberg. "Design and Simulation of Terahertz Antenna for Spintronic Applications". Thesis, Uppsala universitet, Institutionen för materialvetenskap, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-412982.
Pełny tekst źródłaKaushalya. "Ultrafast manipulation of magnetization using on-chip THz". Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0173.
Pełny tekst źródłaThe need for memory storage devices has skyrocketed over the last few decades especially after the development of the internet. This need has reached enormous heights in the past two years, soon after the pandemic due to COVID-19. Hard disk drives (HDDs) are known to have the potential to meet up with the high-density data storage demands. This thesis deals with one of the major challenges faced within the spintronic community to improve the speed and the energy consumption of memory devices.The speed of operation during the writing of a magnetic bit depends on the magnetization switching mechanism employed. The switching mechanism is itself dependent on the intrinsic magnetic properties of the sample and the externally induced excitation that drives the reversal of the magnetic bit 1. In this thesis, we will focus on the use of spin-orbit torque (SOT) excitations to drive the reversal, which is a relatively new but fast and energy-efficient approach in comparison with other state-of-the-art methods.The typical speed of magnetization reversal using SOTs is in the range of few nanoseconds, far slower than the picosecond-long switching that is possible with charge-based memory devices2. In fact, a record reversal speed with electrical pulses as short as ~200ps was reported by Garello et. al., 3 in 2011 using SOTs. This thesis reports further efforts to speed up the magnetization reversal by almost 2 orders of magnitude by exploiting such SOTs. To this aim, THz electrical pulses were generated via the use Auston photoconductive switches. We demonstrate that a single 6ps wide electrical pulse can induce a SOT to a 1nm thin Co ferromagnetic layer and result in a full magnetization reversal. A systematic study to understand SOTs in the picosecond time regime is also undertaken via using different magnetic nanostructures.In magnetic memory devices, a “read-head” is used to read the stored information in the device. Typically, in spintronic devices, giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) based read heads are used for such operations. In this thesis, we also report on the attempts of developing a GMR sensor working in the THz regime.To undertake the aforementioned studies, a pump-probe optical and optoelectrical experimental setup has also been built and a detailed report of the same is also provided in the thesis
Hawecker, Jacques. "Terahertz time resolved spectroscopy of Intersubband Polaritons and Spintronic Emitters". Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS101.
Pełny tekst źródłaThe terahertz (THz) domain provides a rich playground for many practical and fundamental applications, where the low energy of THz photons permits to probe novel light-matter interactions. This work investigates two recent and emerging scientific areas where ultrafast THz spectroscopy can be used as a probe of fundamental phenomena, as well as potentially enabling the conception of new THz sources. In the first case, ultrafast THz spintronics are studied where ultrafast excitations of spintronic heterojunctions result in efficient pulse generation. These structures consist of nanometer thick ferromagnetic - heavy metal junctions, where an optically generated spin-charge in the former is converted to a charge-current in the latter via the Inverse Spin Hall Effect. Beyond these metal-based junctions, ultrafast THz spintronics based on “quantum” materials is also investigated, where THz pulses are generated using quantum phenomena such as the Inverse Edelstein Effect in Topological Insulators, shown to be a promising research direction. The second subject area is focused on THz intersubband polaritons, quasi-particles that emerge from the strong light-matter coupling of a THz photonic cavity and an intersubband transition. Here we are interested in the bosonic nature of the intersubband polaritons, as a long-term aim of realizing a novel THz laser based on Bose-Einstein condensation. In this work, we investigate resonant narrowband pumping of a polariton branch and probe using spectrally broad THz pulses. This shows strong indications of nonlinear effects and potential signatures of scattering processes that could eventually lead to the demonstration of THz polaritonic gain. Finally, to support our work in the above subject areas, technological developments were made in existing THz sources. This included high power THz photoconductive switches using cavities, which permitted the first demonstrations of real time THz imaging with such devices, and high power THz quantum cascade lasers as narrowband laser pumps
LONGO, EMANUELE MARIA. "HETEROSTRUCTURES BASED ON THE LARGE-AREA Sb2Te3 TOPOLOGICAL INSULATOR FOR SPIN-CHARGE CONVERSION". Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/311358.
Pełny tekst źródłaSpin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was investigated studying their FMR response. The FMR data for the Au/Co/Sb2Te3 samples were interpreted considering the presence of a dominant contribution attributed to the Two Magnon Scattering (TMS), likely due to the presence of an unwanted magnetic roughness at the Co/epitaxial-Sb2Te3 interface. The introduction of a Au interlayer to avoid the direct contact between Co and Sb2Te3 layers was shown to be beneficial for the total suppression of the TMS effect. SP-FMR measurements were conducted on the optimized Au/Co/Au/epitaxial-Sb2Te3 structure, highlighting the role played by the epitaxial Sb2Te3substrate in the SP process. The SP signals for the Au/Co/Au/Si(111) and Co/Au/Si(111) reference samples were measured and used to determine the effective spin-to-charge conversion efficiency achieved with the introduction of the epitaxial Sb2Te3 layer. The extracted SCC efficiency was calculated interpreting the SP-FMR data using the Inverse Edelstein effect and Inverse Spin-Hall effect models, which demonstrated that the Sb2Te3 3D-TI is a promising candidate to be employed in the next generation of spintronic devices.
Kane, Matthew Hartmann. "Investigaton of the Suitability of Wide Bandgap Dilute Magnetic Semiconductors for Spintronics". Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16166.
Pełny tekst źródłaDavesne, Vincent. "Organic spintronics : an investigation on spin-crossover complexes from isolated molecules to the device". Phd thesis, Université de Strasbourg, 2013. http://tel.archives-ouvertes.fr/tel-01062266.
Pełny tekst źródłaTseng, Hsiang-Han. "Towards controlling the coercivity in molecular thin films for spintronic applications". Thesis, Imperial College London, 2015. http://hdl.handle.net/10044/1/33845.
Pełny tekst źródłaBruneel, Pierre. "Electronic and spintronic properties of the interfaces between transition metal oxides". Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP047.
Pełny tekst źródłaThe anomalous transport properties of transition metal oxides, in particular the surface of SrTiO₃ or at the interface between SrTiO₃ and LaAlO₃ is investigated in this thesis. These systems host two-dimensional electron gases. Nonlinear Hall Effect measurements suggest that several species of carriers are present in these systems, and that their population is varying on a nontrivial manner upon electrostatic doping. The role of the electrostatics properties of the electron gas and of the electronic correlations are discussed in this light. Next we discuss the spin to charge conversion of these systems thanks to tight-binding modeling and linear response theory. The complex interplay between atomic spin-orbit coupling and the inversion symmetry breaking at the interface leads to a complex spin-orbital-momentum locking of the electrons, inducing spin textures. These spin textures are responsible for the appearance of the Edelstein and Spin Hall Effect in these heterostructures and are characteristic of the multi-orbital character of these electronic systems. Finally an ab initio study of STO/LAO/STO heterostructures is performed to explain experimental evidence of new ways to produce an electron gas at this interface. The respective roles of the chemistry, electrostatics and defects are discussed
Chaluvadi, Sandeep kumar. "Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications". Thesis, Normandie, 2017. http://www.theses.fr/2017NORMC248/document.
Pełny tekst źródłaWe report a quantitative analysis of thickness dependent epitaxial strain-induced effects in La1-xSrxMnO3 (LSMO) (001) (x = 0.33) thin films of thicknesses (50, 25 and 12 nm) grown on various single crystal substrates such as SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001) by Pulsed Laser Deposition (PLD) technique. We also report the composition dependent magnetic properties of LSMO thin films with x = 0.33 and 0.38 in particular grown onto LSAT (001) substrate by Molecular Beam Epitaxy (MBE). The study mainly includes measurements such as X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), temperature dependent four-probe resistivity, magnetization properties by Superconducting Quantum Interference Device (SQUID), magnetic anisotropy by Magneto-Optical Kerr Magnetometry (MOKE). Our results highlight the detailed study of angular evolution and thickness dependent magnetic anisotropy, remanence, coercivity and switching field in epitaxial LSMO thin films. Temperature-dependent studies are also performed on few selected films. We will also discuss the cause of magnetic anisotropy in LSMO films i.e., magneto-crystalline and magnetostriction anisotropy and the effects of steps or substrate mis-cut induced anisotropy
Owen, Man Hon Samuel. "Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors". Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228705.
Pełny tekst źródłaKsiążki na temat "THz spintronics"
International Symposium on Mesoscopic Superconductivity and Spintronics (4th 2006 Atsugi-shi, Japan). Controllable quantum states: Mesoscopic Superconductivity and Spintronics : proceedings of the International Symposium. Redaktorzy Takayanagi H. (Hideaki), Nitta Junsaku i Nakano Hayato. New Jersey: World Scientific Publishing Co., 2008.
Znajdź pełny tekst źródłaInternational Symposium on Mesoscopic Superconductivity and Spintronics (2002 Atsugi-shi, Japan). Towards the controllable quantum states: Mesoscopic superconductivity and spintronics : Atsugi, Kanagawa, Japan, 4-6 March 2002. Redaktorzy Takayanagi H i Nitta Junsaku. River Edge, N.J: World Scientific, 2003.
Znajdź pełny tekst źródłaInternational Symposium on Mesoscopic Superconductivity and Spintronics (2004 Atsugi, Kanagawa, Japan). Realizing controllable quantum states: Mesoscopic superconductivity and spintronics ın the light of quantum computation : Atsugi, Kanagawa, Japan, 1-4 March 2004. Redaktorzy Takayanagi H i Nitta Junsaku. Singapore: World Scientific, 2005.
Znajdź pełny tekst źródłaTruesdell, C. The elements of continuum mechanics. Wyd. 2. New York: Springer-Verlag, 1985.
Znajdź pełny tekst źródłaIFF-Ferienkurs (34th 2003 Forschungszentrum Jülich). Fundamentals of nanoelectronics: Lecture manuscripts of the 34th Spring School of the Department of Solid State Research : this spring school was organized on March 10-21, 2003 in the Forschungszentrum Jülich GmbH by the Institut für Festkörperforschung in collaboration with universities, research institutes and the industry. Jülich: Forschungszentrum Jülich, Institut für Festkörperforschung, 2003.
Znajdź pełny tekst źródłaInternational Winter School on New Developments in Solid State Physics (13th 2004 Mauterndorf, Austria). Proceedings of the Thirteenth International Winterschool on New Developments in Solid State Physics: Low-dimensional systems : held in Mauterndorf, Austria, 15-20 February 2004. Redaktorzy Bauer G. 1942-, Jantsch W. 1946- i Kuchar F. 1941-. Amsterdam, The Netherlands: Elsevier, 2004.
Znajdź pełny tekst źródłaInternational Winter School on New Developments in Solid State Physics (13th 2004 Mauterndorf, Austria). Proceedings of the Thirteenth International Winterschool on New Developments in Solid State Physics: Low-dimensional systems : held in Mauterndorf, Austria, 15-20 February 2004. Redaktorzy Bauer G. 1942-, Jantsch W. 1946- i Kuchar F. 1941-. Amsterdam, The Netherlands: Elsevier, 2004.
Znajdź pełny tekst źródłaBrandt, Siegmund. The Picture Book of Quantum Mechanics. Wyd. 4. New York, NY: Springer New York, 2012.
Znajdź pełny tekst źródłaJoachim, Christian. Atomic Scale Interconnection Machines: Proceedings of the 1st AtMol European Workshop Singapore 28th-29th June 2011. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.
Znajdź pełny tekst źródłaLorente, Nicolas. Architecture and Design of Molecule Logic Gates and Atom Circuits: Proceedings of the 2nd AtMol European Workshop. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.
Znajdź pełny tekst źródłaCzęści książek na temat "THz spintronics"
Mattana, Richard, Nicolas Locatelli i Vincent Cros. "Spintronics and Synchrotron Radiation". W Springer Proceedings in Physics, 131–63. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-64623-3_5.
Pełny tekst źródłaGao, Haitao, Alexandra Jung, Irene Bonn, Vadim Ksenofontov, Sergey Reiman, Claudia Felser, Martin Panthöfer i Wolfgang Tremel. "Substitution Effects in Double Perovskites: How the Crystal Structure Influences the Electronic Properties". W Spintronics, 61–70. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_4.
Pełny tekst źródłaFecher, Gerhard H., Stanislav Chadov i Claudia Felser. "Theory of the Half-Metallic Heusler Compounds". W Spintronics, 115–65. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_7.
Pełny tekst źródłaWüstenberg, Jan-Peter, Martin Aeschlimann i Mirko Cinchetti. "Characterization of the Surface Electronic Properties of Co2Cr1−xFexAl". W Spintronics, 271–84. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_12.
Pełny tekst źródłaGalbiati, Marta. "State of the Art in Organic and Molecular Spintronics". W Molecular Spintronics, 29–42. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-22611-8_3.
Pełny tekst źródłaGalbiati, Marta. "State of the Art in Alq3-Based Spintronic Devices". W Molecular Spintronics, 139–51. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-22611-8_7.
Pełny tekst źródłaPapaioannou, Evangelos, Garik Torosyan i Rene Beigang. "Spintronic THz Emitters". W Advances in Terahertz Source Technologies, 143–79. New York: Jenny Stanford Publishing, 2024. http://dx.doi.org/10.1201/9781003459675-7.
Pełny tekst źródłaJin, Hanmin, i Terunobu Miyazaki. "Technology that Accompanies the Development of Spintronics Devices". W The Physics of Ferromagnetism, 447–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-25583-0_14.
Pełny tekst źródłaLunghi, Alessandro. "Spin-Phonon Relaxation in Magnetic Molecules: Theory, Predictions and Insights". W Challenges and Advances in Computational Chemistry and Physics, 219–89. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-31038-6_6.
Pełny tekst źródłaPershin, I., A. Knizhnik, V. Levchenko, A. Ivanov i B. Potapkin. "The Fouriest: High-Performance Micromagnetic Simulation of Spintronic Materials and Devices". W Advances in Intelligent Systems and Computing, 209–31. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-22871-2_16.
Pełny tekst źródłaStreszczenia konferencji na temat "THz spintronics"
Huisman, Thomas. "THz spectroscopy for THz spintronics (Conference Presentation)". W Spintronics IX, redaktorzy Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2235682.
Pełny tekst źródłaBratschitsch, Rudolf. "Ultrafast spintronic THz emitters (Conference Presentation)". W Spintronics XV, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2022. http://dx.doi.org/10.1117/12.2633298.
Pełny tekst źródłaBonetti, Stefano. "THz probing and manipulation of magnetism (Conference Presentation)". W Spintronics XI, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2322364.
Pełny tekst źródłaBocklage, Lars. "Transient THz spin dynamics by spin pumping (Conference Presentation)". W Spintronics X, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2278014.
Pełny tekst źródłaTiercelin, Nicolas, Geoffrey Lezier, Pierre Koleják, Jean-François Lampin, Kamil Postava i Mathias Vanwolleghem. "THz spintronic emitters with magnetoelectric control of the polarization and applications to polarimetry." W Spintronics XIV, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2597306.
Pełny tekst źródłaQi, Jingbo. "Broadband THz radiation via the inverse spin Hall and Rashba-Edelstein effects (Conference Presentation)". W Spintronics XI, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2322834.
Pełny tekst źródłaKlarskov, Pernille. "Probing carrier dynamics with THz time-domain and emission microscopy (Conference Presentation)". W Spintronics XII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2529938.
Pełny tekst źródłaMedapalli, Rajasekhar, Guanqiao Li, Rostislav Mikhaylovskiy, Fred Spada, Tom Silva, Theo Rasing, Alexey Kimel i Eric E. Fullerton. "Helicity-dependent THz-emission in thin film Co/Pt bilayers: role of the interface (Conference Presentation)". W Spintronics XI, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2321641.
Pełny tekst źródłaHawecker, Jacques, Thi-Huong Dang, Enzo Faycal Rongione, Giovanni Baez Flores, Juan-Carlos Rojas-Sánchez, Hanond Nong, Diogo Vaz i in. "Ultrafast spin-charge interconversion in Rashba states probed by time-domain THz spectroscopy". W Spintronics XIII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2568583.
Pełny tekst źródłaHawecker, Jacques, Enzo Rongione, Laëtitia Baringthon, Thi-Huong Dang, Giovanni G. Baez Flores, Duy-Quang TO, Juan-Carlos Rojas-Sánchez i in. "Ultrafast spin-charge interconversion in Rashba states probed by time-domain THz spectroscopy". W Spintronics XIV, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2594133.
Pełny tekst źródłaRaporty organizacyjne na temat "THz spintronics"
Guha, Supratik, H. S. Philip Wong, Jean Anne Incorvia i Srabanti Chowdhury. Future Directions Workshop: Materials, Processes, and R&D Challenges in Microelectronics. Defense Technical Information Center, czerwiec 2022. http://dx.doi.org/10.21236/ad1188476.
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