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Artykuły w czasopismach na temat „Thin films”

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Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 31 lipca 2024

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1

Dixit, Chandra Kumar, i Mohd Tauqeer Mohd. Tauqeer. "Conductivity Studies of Multilayer Thin Films". International Journal of Scientific Research 2, nr 5 (1.06.2012): 145–46. http://dx.doi.org/10.15373/22778179/may2013/51.

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2

Manickam, RM, H. Patthi i V. Saaminathan. "B-8 EFFECT OF ULTRASONIC FIELD ON THE PROPERTIES OF ELECTRODEPOSITED NI-FE THIN FILMS(Session: Thin films)". Proceedings of the Asian Symposium on Materials and Processing 2006 (2006): 31. http://dx.doi.org/10.1299/jsmeasmp.2006.31.

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3

Verde, M. "EPD-deposited ZnO thin films: a review". Boletín de la Sociedad Española de Cerámica y Vidrio 53, nr 4 (30.08.2014): 149–61. http://dx.doi.org/10.3989/cyv.192014.

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4

E. Camacho-espinosa, E. Camacho-espinosa, E. Rosendo E. Rosendo, A. I. Oliva A.I. Oliva, T. díaz T. díaz, N. Carlos-Ramírez N. Carlos-Ramírez, H. Juárez H. Juárez, G. García G. García i M. Pacio M. Pacio. "Physical Properties of Sputtered Cdte thin Films". Indian Journal of Applied Research 4, nr 5 (1.10.2011): 588–93. http://dx.doi.org/10.15373/2249555x/may2014/186.

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5

Zeynalova, A. O., S. P. Javadova, V. A. Majidzade i A. Sh Aliyev. "ELECTROCHEMICAL SYNTHESIS OF IRON MONOSELENIDE THIN FILMS". Chemical Problems 19, nr 4 (2021): 262–71. http://dx.doi.org/10.32737/2221-8688-2021-4-262-271.

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In the presented research work, the kinetics and mechanism of the deposition process of thin iron, selenium and Fe-Se films have been studied by recording a cyclic and linear polarization curves by potentiodynamic method using Pt and Ni electrodes. Individual and co-deposition potential areas of the components of the electrolyte on the Pt electrode were determined. In order to determine the optimal electrolysis mode and electrolyte composition, the effect of various factors (concentration of initial components, temperature, etc.) on the co-electrodeposition process of Fe-Se was studied. In addition, Fe-Se samples deposited on the surface of Ni electrodes were thermally treated at 4500C and studied by SEM and X-ray phase analysis methods. Elemental analysis of the films shows that they contain 42.2% Fe and 57.8% Se.

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6

Jafarova, S. F. "CO-ELECTRODEPOSITION OF THIN Mo-S FILMS". Azerbaijan Chemical Journal, nr 1 (12.03.2020): 16–19. http://dx.doi.org/10.32737/0005-2531-2020-1-16-19.

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7

Men'shikova, S. I. "Size effects in thin n-PbTe films". Functional materials 22, nr 1 (20.04.2015): 14–19. http://dx.doi.org/10.15407/fm22.01.014.

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8

Yunakova, O. N. "Exciton absorption spectrum of Cs4PbCl6 thin films". Functional materials 22, nr 2 (30.06.2015): 175–80. http://dx.doi.org/10.15407/fm22.02.175.

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9

Osaka, Tetsuya, i Takayuki Homma. "Thin Films". Electrochemical Society Interface 4, nr 2 (1.06.1995): 42–46. http://dx.doi.org/10.1149/2.f07952if.

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10

Brauman, J. I., i P. Szuromi. "Thin Films". Science 273, nr 5277 (16.08.1996): 855–0. http://dx.doi.org/10.1126/science.273.5277.855.

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11

Česnek, J., J. Dobiáš, J. Houšová i J. Sedláček. "Properties of thin metallic films for microwave susceptors". Czech Journal of Food Sciences 21, No. 1 (18.11.2011): 34–40. http://dx.doi.org/10.17221/3475-cjfs.

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Thin Al films of varying thickness, i.e. 3 to 30 nm, were deposited onto polyethylene-terephthalate film by evaporation in the vacuum of 3 × 10<sup>–3</sup> Pa. The dependence of DC (direct current) surface resistance on thickness was measured using a four-point method. The surface resistance exhibits the size effect in accordance with the Fuchs-Sondheimer theory. The microwave absorption properties of the prepared films of various metallization thickness were measured in a microwave field at the microwave power of 1.8 mW. The maximum microwave absorption at 2.45 GHz was found to occur in a layer of optical density of about 0.22.  

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12

Majidzade, V. A., S. F. Cafarova, A. Sh Aliyev, N. B. Farhatova i D. B. Tagiyev. "ELECTROCHEMICAL DEPOSITION OF THIN SEMICONDUCTIVE Mo–S FILMS". Azerbaijan Chemical Journal, nr 1 (19.03.2019): 6–13. http://dx.doi.org/10.32737/0005-2531-2019-1-6-13.

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13

MAHENDRA KUMAR, MAHENDRA KUMAR. "Cds/ Sno2 Thin Films for Solar Cell Applications". International Journal of Scientific Research 3, nr 3 (1.06.2012): 322–23. http://dx.doi.org/10.15373/22778179/march2014/109.

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14

Guoying Yan, Guoying Yan, Guangsheng Fu Guangsheng Fu, Zilong Bai Zilong Bai i Shufang Wang Shufang Wang. "Lateral photovoltaic ef fects in Bi2Sr2Co2Oy thin films". Chinese Optics Letters 11, nr 12 (2013): 123101–3. http://dx.doi.org/10.3788/col201311.123101.

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15

Rogacheva, E. I. "Structure of thermally evaporated bismuth selenide thin films". Functional materials 25, nr 3 (27.09.2018): 516–24. http://dx.doi.org/10.15407/fm25.03.516.

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16

Elmeleegi, H. A., Z. S. Elmandouh i F. Taher. "Carrier Type Reversal of Graphene Multilayered Thin Films". Ukrainian Journal of Physics 59, nr 4 (kwiecień 2014): 426–32. http://dx.doi.org/10.15407/ujpe59.04.0426.

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17

Boonyopakorn, Narong, Nitat Sripongpun, Chanchana Thanachayanont, Tanakorn Osotchan i Somsak Dangtip. "B-7 EFFECTS OF NATURE OF SUBSTRATE ON MICROSTRUCTURE OF ITO AND TIO_2 THIN FILMS GROWN BY RF SPUTTERING(Session: Thin films)". Proceedings of the Asian Symposium on Materials and Processing 2006 (2006): 30. http://dx.doi.org/10.1299/jsmeasmp.2006.30.

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18

Prestipino, R. M., i B. K. Furman. "SIMS/TEM characterization of titanium thin films". Proceedings, annual meeting, Electron Microscopy Society of America 44 (sierpień 1986): 590–91. http://dx.doi.org/10.1017/s0424820100144425.

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Thin metal films are important constituents of semiconductor devices and packages. One metal of primary interest is titanium. It is known that titanium is susceptible to absorption of hydrogen at elevated temperatures and forms hydrides that can cause embrittlement and cracking. In this study secondary ion mass spectroscopy (SIMS) was used to study the absorption of hydrogen into titanium thin films as a function of processing conditions. SIMS/ion imaging provided information on hydrogen segregation and hydride formation. Transmission electron microscopy (TEM) was used to study the microstructure of the fi1ms.

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19

M. C. Rao, M. C. Rao. "Vacuum Evaporated MoO3 Thin Films for Gas Sensing Application". Indian Journal of Applied Research 3, nr 4 (1.10.2011): 417–18. http://dx.doi.org/10.15373/2249555x/apr2013/137.

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20

M. C. Rao, M. C. Rao. "Vacuum Evaporated WO3 Thin Films For Gas Sensing Application". Indian Journal of Applied Research 3, nr 4 (1.10.2011): 419–21. http://dx.doi.org/10.15373/2249555x/apr2013/138.

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21

Kawar, Shashank S. "Synthesis and Characterization of Nanocrystalline Chalcogenide Cus Thin Films". Indian Journal of Applied Research 4, nr 5 (1.10.2011): 580–82. http://dx.doi.org/10.15373/2249555x/may2014/184.

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22

Sozanskyi, Martyn, Vitalii Stadnik, Pavlo Shapoval, Iosyp Yatchyshyn, Ruslana Guminilovych i Stepan Shapoval. "Optimization of Synthesis Conditions of Mercury Selenide Thin Films". Chemistry & Chemical Technology 14, nr 3 (22.09.2020): 290–96. http://dx.doi.org/10.23939/chcht14.03.290.

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23

Hongji Qi, Hongji Qi, Meiping Zhu Meiping Zhu, Weili Zhang Weili Zhang, Kui Yi Kui Yi, Hongbo He Hongbo He i Jianda Shao Jianda Shao. "Dependence of wavefront errors on nonuniformity of thin films". Chinese Optics Letters 10, nr 1 (2012): 013104–13107. http://dx.doi.org/10.3788/col201210.013104.

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24

Kryuchyn, A. A. "High-speed optical recording in vitreous chalcogenide thin films". Semiconductor Physics Quantum Electronics and Optoelectronics 17, nr 4 (10.11.2014): 389–93. http://dx.doi.org/10.15407/spqeo17.04.389.

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25

B. A. Ezekoye, B. A. Ezekoye, P. O. Offor P.O. Offor, V. A. Ezekoye V. A. Ezekoye i F. I. Ezema F. I. Ezema. "Chemical Bath Deposition Technique of Thin Films: A Review". International Journal of Scientific Research 2, nr 8 (1.06.2012): 452–56. http://dx.doi.org/10.15373/22778179/aug2013/149.

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26

Ugwu, Emmanuel Ifeanyi. "Perovskite Oxide Material Based Thin Films Prospect and Applicability". Nanomedicine & Nanotechnology Open Access 8, nr 3 (2023): 1. http://dx.doi.org/10.23880/nnoa-16000240.

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In this current dispensation and quest for material thin film that exhibits ranges of applications in various areas due to its wide spectrum of attractive properties such ferroelectricity, piezoelectricity, ferromagnetism dielectric, magnotoresistance, multiferroic with high efficiency in solar energy conversion couple with the fact that some are good for passivation of layer of metals and then invariably minimizes metal corrosion

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27

Sugi, Michio. "Organic Thin Films". IEEJ Transactions on Fundamentals and Materials 113, nr 11 (1993): 728–35. http://dx.doi.org/10.1541/ieejfms1990.113.11_728.

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28

SHIOSAKI, Tadashi. "Piezoelectric Thin Films". Journal of the Ceramic Society of Japan 99, nr 1154 (1991): 836–41. http://dx.doi.org/10.2109/jcersj.99.836.

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29

Agulló-López, F., María Aguilar i M. Carrascosa. "Photorefractive thin films". Pure and Applied Optics: Journal of the European Optical Society Part A 5, nr 5 (wrzesień 1996): 495–503. http://dx.doi.org/10.1088/0963-9659/5/5/004.

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30

Rowell, John. "Superior thin films". Nature Materials 1, nr 1 (wrzesień 2002): 5–6. http://dx.doi.org/10.1038/nmat713.

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31

Dietrich, S. "Thin liquid films". Physica Scripta T49B (1.01.1993): 519–24. http://dx.doi.org/10.1088/0031-8949/1993/t49b/025.

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32

SUGI, Michio. "Organic thin films." Hyomen Kagaku 10, nr 10 (1989): 804–10. http://dx.doi.org/10.1380/jsssj.10.804.

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33

Lakhtakia, Akhlesh, i Russell Messier. "Sculptured Thin Films". Optics and Photonics News 12, nr 9 (1.09.2001): 26. http://dx.doi.org/10.1364/opn.12.9.000026.

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34

Murata, Hideyuki, Tetsuo Tsutsui i Shogo Saito. "Polyarylenevinylene thin films." Kobunshi 40, nr 3 (1991): 186–89. http://dx.doi.org/10.1295/kobunshi.40.186.

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35

Pagnia, H. "Carbonaceous thin films". Vacuum 39, nr 1 (styczeń 1989): 3–5. http://dx.doi.org/10.1016/0042-207x(89)90083-3.

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36

Braides, A., i I. Fonseca. "Brittle Thin Films". Applied Mathematics and Optimization 44, nr 3 (1.01.2001): 299–323. http://dx.doi.org/10.1007/s00245-001-0022-x.

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37

Moustakis, T. "Thin diamond films". Solid State Ionics 26, nr 2 (marzec 1988): 144. http://dx.doi.org/10.1016/0167-2738(88)90035-5.

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38

Cazabat, A. M., N. Fraysse i F. Heslot. "Thin wetting films". Colloids and Surfaces 52 (styczeń 1991): 1–8. http://dx.doi.org/10.1016/0166-6622(91)80002-6.

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39

Pleasants, Simon. "Measuring thin films". Nature Photonics 7, nr 7 (27.06.2013): 505. http://dx.doi.org/10.1038/nphoton.2013.164.

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40

Cook, M. J. "Phthalocyanine thin films". Pure and Applied Chemistry 71, nr 11 (30.11.1999): 2145–51. http://dx.doi.org/10.1351/pac199971112145.

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41

Tossell, David A., i Anil Patel. "Ferroelectric thin films". Advanced Materials 4, nr 12 (grudzień 1992): 816–18. http://dx.doi.org/10.1002/adma.19920041212.

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42

Sattler, René. "Thin films polarize". PhotonicsViews 20, nr 1 (3.01.2023): 61–63. http://dx.doi.org/10.1002/phvs.202300009.

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43

Helmich, Lars, Marianne Bartke, Niclas Teichert, Benjamin Schleicher, Sebastian Fähler i Andreas Hütten. "Gadolinium thin films as benchmark for magneto-caloric thin films". AIP Advances 7, nr 5 (maj 2017): 056429. http://dx.doi.org/10.1063/1.4977880.

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44

Szuromi, P. D. "CHEMISTRY: Thin Films from Thin Solutions". Science 298, nr 5592 (11.10.2002): 325d—325. http://dx.doi.org/10.1126/science.298.5592.325d.

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45

Srikanth, Vadali V. S. S., P. Sampath Kumar i Vijay Bhooshan Kumar. "A Brief Review on theIn SituSynthesis of Boron-Doped Diamond Thin Films". International Journal of Electrochemistry 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/218393.

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Diamond thin films are well known for their unsurpassed physical and chemical properties. In the recent past, research interests in the synthesis of conductive diamond thin films, especially the boron-doped diamond (BDD) thin films, have risen up to cater to the requirements of electronic, biosensoric, and electrochemical applications. BDD thin films are obtained by substituting some of thesp3hybridized carbon atoms in the diamond lattice with boron atoms. Depending on diamond thin film synthesis conditions, boron doping routes, and further processing steps (if any), different types of BDD diamond thin films with application-specific properties can be obtained. This paper will review several important advances in the synthesis of boron-doped diamond thin films, especially those synthesized via gas phase manipulation.

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46

RODRÍGUEZ-LAZCANO, Y., M. T. S. NAIR i P. K. NAIR. "CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS". Modern Physics Letters B 15, nr 17n19 (20.08.2001): 667–70. http://dx.doi.org/10.1142/s0217984901002257.

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The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

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47

Ghonge, S. G., E. Goo, R. Ramesh, R. Haakenaasen i D. K. Fork. "Epitaxial ferroelectric thin films". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 572–73. http://dx.doi.org/10.1017/s0424820100170591.

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Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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48

Elizondo-Villarreal, Nora, Rubén O. Torres-Barrera, Rodrigo Arriaga-Garza, Luz-Hypatia Verástegui-Domínguez, Rodolfo Corté i Víctor M. Castaño. "Ag Thin Films from Pelargonium Zonale Leaves via Green Chemistry". Chemistry & Chemical Technology 17, nr 1 (26.03.2023): 133–40. http://dx.doi.org/10.23939/chcht17.01.133.

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Ag thin films were successfully produced via a green chemistry method from silver nanoparticles (AgNPs) obtained from reacting an extract of Pelargonium Zonale leaves with silver nitrate. The ions of silver nitrate were reduced to silver atoms by reducing stabilizer-capping compounds contained in the extract of Pelargonium Zonale leaves. The obtained atoms nucleate in small clusters that grew into nanoparticles and finally, they formed a homogeneous silver thin film on a glass substrate. The nanostructured thin films obtained were characterized by profilometry, X Ray Diffraction, Atomic Force Electronic Microscopy, UV-Vis, and Transmission Electron Microscopy.

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49

Jouan, Pierre Yves, Arnaud Tricoteaux i Nicolas Horny. "Elaboration of nitride thin films by reactive sputtering". Rem: Revista Escola de Minas 59, nr 2 (czerwiec 2006): 225–32. http://dx.doi.org/10.1590/s0370-44672006000200013.

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The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

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50

Rathee, Kanta, i B. P. Malik B P Malik. "Synthesis and Characterisation of Ta2o5 Thin Films For Microelectronics Application". Indian Journal of Applied Research 3, nr 6 (1.10.2011): 486–88. http://dx.doi.org/10.15373/2249555x/june2013/161.

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