Artykuły w czasopismach: „Thin Film Transistors (TFT)”

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Park, Hyun-Woo, Sera Kwon, Aeran Song, Dukhyun Choi i Kwun-Bum Chung. "Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor". Journal of Materials Chemistry C 7, nr 4 (2019): 1006–13. http://dx.doi.org/10.1039/c8tc03585g.

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The key to full understanding of the degradation mechanism of oxide thin film transistors (Ox-TFTs) by gate bias stress is to investigate dynamical changes of the electron trap site at the channel region while a real-time gate bias is applied to the actual thin film transistor (TFT) structure.

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Pokharel, Peshal, i Lalita Shrestha. "Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics". Himalayan Journal of Science and Technology 6, nr 1 (31.12.2022): 22–28. http://dx.doi.org/10.3126/hijost.v6i1.50645.

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A thin-film transistor (TFT) is a special type of metal-oxide-semiconductor field-effect transistor (MOSFET) made by coating an insulating substrate with layers of an active semiconductor layer, metallic contacts, and the dielectric layer. FET transistors consist of three main components: source, gate, and drain. The main objective of the work is to fabricate the channel component by growing the ZnO nanostructure on the glass substrate using spin coating and spray pyrolysis methods. Thin films of zinc oxide (ZnO) were deposited on glass substrates by spin coating techniques from a precursor solution containing zinc acetate, ethanol and hydroxide of ammonia. After deposition, the films were centrifuged and evaporated. The application of spray pyrolysis has been used to deposit a wide variety of thin films, which are used in a variety of devices, such as solar cells, sensors and solid oxide fuel cells. It has been observed that the properties of the deposited thin films often depend on the preparation conditions; concentration levels of the precursor solution, coating time, electrical and optical properties of the glass substrate, etc. The average resistance of the sheet of samples F1, F5, F52, and F57 was 8.7 Ω, 9.14 Ω, 8.9 Ω and 9.42 Ω and of the samples, F2, F29, F39, and F53 were 9.5 Ω, 9.3 Ω, 9.9 Ω, 10.0 Ω respectively, at a growth temperature of 3400C. The thin films of ZnO were found to be highly transparent between the visible and near-infrared regions of the electromagnetic spectrum and the transmission of each sample decreases with three layers of ZnO seed layer. The decrease in the transmission of the samples confirms the coating of the ZnO seed layer on it. This work has demonstrated that transparent thin films can be fabricated using local techniques developed from locally available materials using less harmful chemical reagents such as zinc acetate. Such fabricated films are optically absorptive and inherently transmissive, further suggesting that they can be used as a channel material in thin film transistors.

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Manoli, Kyriaki, Preethi Seshadri, Mandeep Singh, Cinzia Di Franco, Angelo Nacci, Gerardo Palazzo i Luisa Torsi. "Solvent-gated thin-film-transistors". Physical Chemistry Chemical Physics 19, nr 31 (2017): 20573–81. http://dx.doi.org/10.1039/c7cp03262e.

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TFTs gated through highly polar solvents have a salt independent response while for low polarity solvents the TFT current increases with salt. This was accounted for by the different contributions of Helmholtz and Guy-Chapman electrical double layers to the capacitance.

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Kuo, Yue. "(Invited) Oxide TFT Applications: Principles and Challenges". ECS Meeting Abstracts MA2022-02, nr 35 (9.10.2022): 1285. http://dx.doi.org/10.1149/ma2022-02351285mtgabs.

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The main advantage of the thin film transistor (TFT) is that it can be fabricated on non-wafer substrate independent of the size, flexibility, and morphology. All composing films of the TFT are deposited at the low temperature. Therefore, TFTs can be applied to a broad range of consumer, biological, chemical, and optical products that are difficult to fabricate with the wafer based MOSFETs. There are many reports on a-Si:H and poly-Si TFT applications in displays, imagers, sensors, drivers, flexible electronics, and circuits (1,2). In principle, oxide TFTs can be applied to similar products. However, since the device characteristics and compositing materials of the oxide TFT are different from those of the a-Si:H and poly- Si TFTs, as shown in Figure 1 and Table 1, there are advantages and disadvantages in former’s applications. In this presentation, oxide TFT applications in the following three areas will be discussed. Control of the attached device, such as pixel-driving in displays, Integrated circuits, such as drivers or inverters, and Changing of characteristics with environment, such as pH, optical, and temperature sensors. L. Antonuk, Chapt. 10, and Y. Kuo, Chapt. 11, Amorphous Silicon Thin Film Transistors, pp. 395-505, Kluwer Academic Publishers, 2004. B.-D. Choi, et al., Chapt. 11-13, Polycrystalline Silicon Thin Film Transistors, Y. Kuo Editor, pp. 360-495, Kluwer Academic Publishers, 2004. Kuo and G. W. Chang, ECS Trans, 64(10), 145-153 (2014). Figure 1

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Mądzik, Mateusz Tomasz, Elangovan Elamurugu, Raquel Flores i Jaime Viegas. "Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes". MRS Advances 1, nr 4 (2016): 265–68. http://dx.doi.org/10.1557/adv.2016.26.

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ABSTRACTThin-film transistors (TFT) were fabricated at a room-temperature (RT) with zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. To isolate the gate oxide and gate electrode influence on the device performance, common gate configuration on a commercial substrate with thermal SiO2 (100 nm) was selected. A threshold voltage (VTh) of 10 V and ION/IOFF ratio of 1 × 10-5 were obtained. Once the reference data was taken transistors were exposed to glycerol. Temporary changes in device characteristics were observed due to the influence of glycerol, a low conductivity medium. To exclude the possibility of sugar alcohol being the main conductor, measurement on dummy transistor electrode was performed retaining the distance between probes. The TFT device under test revealed ten times higher drain current but also a change in threshold voltage and leakage current. Transistors under glycerol influence were always open with the positive gate bias.

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Yan, Xingzhen, Kai Shi, Xuefeng Chu, Fan Yang, Yaodan Chi i Xiaotian Yang. "Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors". Coatings 9, nr 10 (27.09.2019): 619. http://dx.doi.org/10.3390/coatings9100619.

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The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.

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Gu, Guiru, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih i in. "All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response". Journal of Nanotechnology 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/823680.

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We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.

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Nagamatsu, Shuichi, Masataka Ishida, Shougo Miyajima i Shyam S. Pandey. "P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension". Materials 12, nr 21 (5.11.2019): 3643. http://dx.doi.org/10.3390/ma12213643.

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A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.

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Furuta, Mamoru, i Yusaku Magari. "(Invited, Digital Presentation) Nondegenerate Hydrogen-Doped Polycrystalline Indium Oxide (InOx:H) Thin Films for High-Mobility Thin Film Transistors". ECS Meeting Abstracts MA2022-02, nr 35 (9.10.2022): 1266. http://dx.doi.org/10.1149/ma2022-02351266mtgabs.

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Transparent metal oxide semiconductors (OSs) have been extensively investigated for use as the active channel layer of thin film transistors (TFTs) for next-generation flat-panel displays, nonvolatile memories, image sensors, and pH sensors, to name a few. Among OSs, the amorphous In–Ga–Zn–O (IGZO) has attracted particular attention for TFT applications owing to its high field effect mobility (μFE) of more than 10 cm2V−1s−1, steep subthreshold swing (S.S.), extremely low off-state current, large-area uniformity, and good bias stress stability. Although the μFE of an IGZO TFT is approximately one order of magnitude higher than that of an amorphous Si TFT, further improvement of the μFE of OS TFTs is required to expand their range of applications as an alternative to polycrystalline Si TFT. Single-crystalline In2O3 has a Hall mobility as high as 160 cm2V−1s−1, which makes amorphous (a-) or polycrystalline (poly-) InOx a potential material for enhancing the μFE of OS TFTs. However, undoped InOx thin films is known as a degenerate semiconductor with high background electron density of over 1020 cm-3, which is attributed to the presence of native defects, such as oxygen vacancies, making them unsuitable for a channel material of OS TFTs. In this presentation, nondegenerate hydrogen-doped polycrystalline InOx (poly-InOx:H) thin films were successfully prepared by low-temperature solid phase crystallization (SPC). A degenerate amorphous InOx:H thin film was deposited by sputtering in Ar, O2, and H2 gases, and an amorphous to polycrystalline phase transition (SPC) of the film was achieved after PDA at more than 175 °C. By PDA at 250 °C in air, a nondegenerate poly-InOx:H film could be obtained with a carrier density as low as 2.4 × 1017 cm−3, which is approximately three orders of magnitude lower than that of the initial a-InOx:H film. The TFTs with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. A maximum μFE of 125.7 cm2V−1s−1 was exhibited by the TFT with the poly-InOx:H channel. The use of a nondegenerate poly-InOx:H film is a promising approach to boost the μFE of OS TFTs.

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Shin, Seung Won, Jae Eun Cho, Hyun-Mo Lee, Jin-Seong Park i Seong Jun Kang. "Photoresponses of InSnGaO and InGaZnO thin-film transistors". RSC Advances 6, nr 87 (2016): 83529–33. http://dx.doi.org/10.1039/c6ra17896k.

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ITGO TFT were fabricated to study the photoresponses of indium-based oxide semiconductors. We found that the increased amount and low electron binding energy of indium can improve the recovery time of ITGO TFTs.

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Xu, Wangying, Chuyu Xu, Zhibo Zhang, Weicheng Huang, Qiubao Lin, Shuangmu Zhuo, Fang Xu, Xinke Liu, Deliang Zhu i Chun Zhao. "Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors". Nanomaterials 12, nr 16 (22.08.2022): 2880. http://dx.doi.org/10.3390/nano12162880.

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We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (~6 nm) In-Pr-O thin films with near-atomic smoothness (~0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm2/Vs and on/off current ratio of ~106 based on Si/SiO2 substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of Pr2O3 and In2O3, and In-Pr-O channel’s nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

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Yang, X., C. Wang, C. Zhao, W. Tang, X. Gao, J. Yang, B. Liu, X. Qi, G. Du i J. Cao. "Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass". Key Engineering Materials 428-429 (styczeń 2010): 501–4. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.501.

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In our paper, we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully, the Ion/off ratio is ~104.

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Kang, Tsung-Kuei, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao i Hone-Zern Chen. "Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor". Membranes 11, nr 10 (30.09.2021): 758. http://dx.doi.org/10.3390/membranes11100758.

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By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

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Pons Flores, Cesar Adrian, Israel Mejía, Manuel Quevedo-Lopez, Clemente Alvarado Beltran i Luis Martín Reséndiz. "Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors". Superficies y Vacío 30, nr 3 (26.11.2017): 46–50. http://dx.doi.org/10.47566/2017_syv30_1-030046.

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We analyze the influence of three combined effects on the contact resistance in organic- based thin film transistors: a) the active layer thickness, b) device architecture and c) semiconductor degradation. Transfer characteristics and parasitic series resistance were analyzed in devices with three different active layer thicknesses (50, 100 and 150 nm) using top contact (TC) and bottom contact (BC) thin film transistor (TFT) configurations. In both configurations, the lowest contact resistance (2.49 × 106 ?) and the highest field-effect mobility (4.8 × 10-2 cm2/V·s) was presented in devices with the thicker pentacene film. Top contact thin film transistors presented field-effect mobility values one order of magnitude higher (4.8 × 10-2 cm2/V·s) than bottom contact ones (1 × 10-3 cm2/V·s). Threshold voltage for top-contact thin film transistors was -3.1 V. After 2 months, performance in the devices degraded and presented an increase of one order of magnitude (105 - 106 ?) for BC-TFTs and two orders of magnitude (106 - 108 ?) for TC-TFTs in contact resistance.

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Ning, Honglong, Xuan Zeng, Hongke Zhang, Xu Zhang, Rihui Yao, Xianzhe Liu, Dongxiang Luo, Zhuohui Xu, Qiannan Ye i Junbiao Peng. "Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature". Membranes 12, nr 1 (27.12.2021): 29. http://dx.doi.org/10.3390/membranes12010029.

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Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

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Wang, Xiao, i Ananth Dodabalapur. "Modeling of thin-film transistor device characteristics based on fundamental charge transport physics". Journal of Applied Physics 132, nr 4 (28.07.2022): 044501. http://dx.doi.org/10.1063/5.0083876.

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A model is described that enables the calculation of thin-film transistor (TFT) characteristics starting from fundamental considerations of charge transport. Starting from scattering mechanisms and trap distribution in a semiconductor, electric field and charge density distributions are calculated along the channel length direction. Output and transfer characteristics of a TFT can be calculated at any temperature. The model is quasi-two-dimensional and is based on multiple trap and release transport in the semiconductor active layer. Importantly, the charge transport models that constitute the basis of this paper are very sophisticated and operate at a level of depth and detail that go beyond most other studies on thin-film transistors. Contact resistance effects, often very important in TFTs, are included in the model. Simulation results are presented for several representative TFT dimensions and parameter sets. The model is designed for convenient use by the research community, and the source code as well as instructions are publicly available. The modular nature of the models allows for ease in changing the semiconductor parameters, transport mechanisms, contact barriers, etc.

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Kandpal, Kavindra, i Navneet Gupta. "Perspective of zinc oxide based thin film transistors: a comprehensive review". Microelectronics International 35, nr 1 (2.01.2018): 52–63. http://dx.doi.org/10.1108/mi-10-2016-0066.

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Purpose The purpose of this paper is to present a comprehensive review on development and future trends in zinc oxide thin film transistors (ZnO TFTs). This paper presents the development of TFT technology starting from amorphous silicon, poly-Si to ZnO TFTs. This paper also discusses about transport and device modeling of ZnO TFT and provides a comparative analysis with other TFTs on the basis of performance parameters. Design/methodology/approach It highlights the need of high–k dielectrics for low leakage and low threshold voltage in ZnO TFTs. This paper also explains the effect of grain boundaries, trap densities and threshold voltage shift on the performance of ZnO TFT. Moreover, it also addresses the challenges like requirement of stable p-type ZnO semiconductor for various electronic applications and high value of ZnO mobility to meet growing demand of high-definition light emitting diode TV (HD-LED TV). Findings This review will motivate the readers to further investigate the conduction mechanism, best alternate for gate-dielectric and the deposition technique optimization for the enhancement of the performance of ZnO TFTs. Originality/value This is a literature review. The technological evolution of TFT in general and ZnO TFT in particular is presented in this paper.

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Liu, Xianzhe, Ao Chen, Weigang Zhu, Yan Li, Huiqi Zhang, Youbin Chen, Aiping Huang i Jianyi Luo. "20.1: Invited Paper: Research on Oxide Thin Film Transistors for Wearable Sensors". SID Symposium Digest of Technical Papers 54, S1 (kwiecień 2023): 151–52. http://dx.doi.org/10.1002/sdtp.16249.

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With the rapid development of the Internet of Things, sensors as an important foundation in the era of smart interconnection, have a significant potential in the emerging fields of smart home, wearable devices, and smart mobile terminals. Flexible sensor has been attracting a great attention due to its portability, miniaturization and long endurance. The high consumption and signal crosstalk are urgent issues for the high‐integration sensing array. These issues could be effectively addressed by active‐matrix thin film transistors (TFT) backplane. In this work, the feasibility of oxide TFT for flexible sensor was discussed, in which high‐quality oxi de semiconductor films, oxide dielectric films, and printing Ag electrodes and wires were investigated, respectively. The device performance of flexible Si‐doped SnO2 TFT was optimized by modulating oxygen partial pressure, which could achieve a relative good electrical properties at room temperature. To implement low‐consumption application, high quality of high‐k ZrO2 dielectric film was investigated by solution‐processed method. The dielectric properties of ZrO2 film with the mircowave‐as sisted or deep ultraviolet irradiation‐assisted annealing process was similar to that of the thermal ann ealing process. The morphology and conductivity of Ag electrodes and wires printed by electrohydrodynamic (EHD) inkjet printing technology were studied. High conductivity of Ag electrodes and wires was achieved at a low curing temperature. These results imply that oxide TFT has a significant potential in the application of flexible sensor array.

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Hu, Shiben, Kuankuan Lu, Honglong Ning, Rihui Yao, Yanfen Gong, Zhangxu Pan, Chan Guo i in. "Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance". Nanomaterials 11, nr 2 (18.02.2021): 522. http://dx.doi.org/10.3390/nano11020522.

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In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

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Tayoub, Hadjira, Baya Zebentouta i Zineb Benamara. "TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor". Pakistan Journal of Scientific & Industrial Research Series A: Physical Sciences 63, nr 2 (15.07.2020): 89–93. http://dx.doi.org/10.52763/pjsir.phys.sci.63.2.2020.89.93.

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Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have been studied because of their high performance in Active Matrix Liquid Crystal Displays (AMLCD's) and Active Matrix Organic Light-Emitting Diode (AMOLED) applications. The purpose of this work is to simulate the impact of varying the electrical and physical parameters (the interface states, active layer's thickness and BBT model) in the transfer characteristics of poly-Si TFT to extract the electrical parameters like the threshold voltage, the mobility and to evaluate the device performance. The device was simulated using ATLAS software from Silvaco, the results show that the electrical and physical parameters of poly-Si TFT affect significantly its transfer characteristics, choosing suitable parameters improve high-performance transistor. Such results make the designed structure a promising element for large-scale electronics applications.

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Matsukawa, Kimihiro, Mitsuru Watanabe, Takashi Hamada, Takashi Nagase i Hiroyoshi Naito. "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors". International Journal of Polymer Science 2012 (2012): 1–10. http://dx.doi.org/10.1155/2012/852063.

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Printable organic thin-film transistor (O-TFT) is one of the most recognized technical issues nowadays. Our recent progress on the formation of organic-inorganic hybrid thin films consists of polymethylsilsesquioxane (PMSQ), and its applications for the gate-insulating layer of O-TFTs are introduced in this paper. PMSQ synthesized in toluene solution with formic acid catalyst exhibited the electric resistivity of higher than 1014 Ω cm after thermal treatment at 150°C, and the very low concentration of residual silanol groups in PMSQ was confirmed. The PMSQ film contains no mobile ionic impurities, and this is also important property for the practical use for the gate-insulating materials. In the case of top-contact type TFT using poly(3-hexylthiophene) (P3HT) with PMSQ gate-insulating layer, the device properties were comparable with the TFTs having thermally grown SiO2gate-insulating layer. The feasibility of PMSQ as a gate-insulating material for O-TFTs, which was fabricated on a flexible plastic substrate, has been demonstrated. Moreover, by the modification of PMSQ, further functionalities, such as surface hydrophobicity, high permittivity that allows low driving voltage, and photocurability that allows photolithography, could be appended to the PMSQ gate-insulating layers.

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Shuib, Umar Faruk, Khairul Anuar Mohamad, Afishah Alias, Tamer A. Tabet, Bablu K. Gosh i Ismail Saad. "Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation". Advanced Materials Research 1107 (czerwiec 2015): 514–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.514.

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As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.

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Al-Jawhari, H. A., J. A. Caraveo-Frescas i M. N. Hedhili. "Tunable Performance of P-Type Cu₂O/SnO Bilayer Thin Film Transistors". Advances in Science and Technology 93 (październik 2014): 260–63. http://dx.doi.org/10.4028/www.scientific.net/ast.93.260.

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Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu2O/SnO bilayer channel scheme. Using Cu2O film produced at a relative oxygen partial pressure Opp of 10% - as an upper layer - and 3% Opp SnO films - as lower layers - we built a matrix of bottom gate Cu2O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu2O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu2O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu2O/SnO bilayer TFT.

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Wager, John F. "(Invited) Thin-Film Transistor Accumulation-Mode Modeling". ECS Meeting Abstracts MA2022-02, nr 35 (9.10.2022): 1257. http://dx.doi.org/10.1149/ma2022-02351257mtgabs.

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Analytical equations are developed for electrostatic assessment of accumulation-mode thin-film transistors (TFTs) so that potential, electric field, and accumulation layer free electron concentration profiles may be generated. Additionally, equations are derived for plotting TFT trap density versus surface potential, based on accurate extraction of the channel mobility as a function of gate voltage. A key factor in formulating these device physics equations is distinguishing between a ‘long-base’ or ‘short-base’ channel thickness. A ‘long-base’ (‘short-base’) channel thickness is defined to occur when the accumulation layer thickness (as calculated in the normal manner) is less than (greater than) the physical thickness of the channel layer. The electrostatic equations derived herein are applied to the analysis of two amorphous oxide semiconductor (AOS) TFTs with differing channel layers, i.e., a 40 nm amorphous indium gallium zinc oxide (a-IGZO) or a 7 nm amorphous indium zinc oxide (a-IZO). Application of these equations suggests that optimal TFT performance is obtained when the channel layer thickness is chosen to be similar to its Debye length. Estimated trap densities of these two AOS TFTs are found to be quite similar. Therefore, the superior mobility performance of the a-IZO TFT compared to the a-IGZO TFT is ascribed to the smaller effective mass of a-IZO, assuming that the maximum (no trapping) drift mobility in the channel is established by the thermally-limited diffusive mobility.

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Yen, Te Jui, Albert Chin i Vladimir Gritsenko. "Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer". Nanomaterials 11, nr 1 (3.01.2021): 92. http://dx.doi.org/10.3390/nano11010092.

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Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor’s turn-on subthreshold slopes (SS) of 526 mV/decade were achieved simultaneously. Secondary ion mass spectrometry analysis revealed that the excellent device integrity was strongly related to process temperature, because the HfO2/SnO interface and related μFE were degraded by Sn and Hf inter-diffusion at an elevated temperature due to weak Sn–O bond enthalpy. Oxygen content during process is also crucial because the hole-conductive p-type SnO channel is oxidized into oxygen-rich n-type SnO2 to demote the device performance. The hole μFE, ION/IOFF, and SS values obtained in this study are the best-reported data to date for top-gate p-TFT device, thus facilitating the development of monolithic 3D ICs on the backend dielectric of IC chips.

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Yang, Huan, Bo Wang, Wenting Dong, Zhikang Ma, Wengao Pan, Lei Lu i Shengdong Zhang. "P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors". SID Symposium Digest of Technical Papers 54, S1 (kwiecień 2023): 461–63. http://dx.doi.org/10.1002/sdtp.16332.

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The energy band dependent mobility in heterojunction amorphous oxide semiconductor thin‐film transistors (TFTs) is investigated. Results indicate that both of the energy band configurations with potential well (PW) and barrier (PB) formation could allow TFT with high‐mobility operation. Specifically, TFT with PW only exhibits high mobility when the gate electric field direction is consistent with that of build‐in electric field in PW, whereas TFT with PB could exhibit high mobility no matter what the electric field direction configuration is.

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Md Sin, N. D., Mohamad Hafiz Mamat i Mohamad Rusop. "Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application". Advanced Materials Research 667 (marzec 2013): 511–15. http://dx.doi.org/10.4028/www.scientific.net/amr.667.511.

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The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.

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Shur, Michael, Xueqing Liu i Trond Ytterdal. "(Invited) Improved Thin Film Transistor Model Predicts TFT Operation in the THz Range". ECS Meeting Abstracts MA2022-02, nr 35 (9.10.2022): 1256. http://dx.doi.org/10.1149/ma2022-02351256mtgabs.

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Novel Thin-film-transistor (TFT) TFT materials such as ZnO, InGaZnO, AMO-CNT, and organic materials dramatically improved the achieved and projected TFT performance. The low field mobility of oxide materials has reached values comparable to those for short-channel Si CMOS. The effects related to electron inertia and electron density oscillations in field effect transistors channels (FETs) diminish the role of the low field mobility as a figure of merit in short channel devices making the performance gap between TFTs and Si CMOS smaller enabling high frequency TFT applications even reaching sub-THz and THz frequencies (for the operating regimes using the rectification of the plasma oscillations. We report on an improved compact model based on the RPI TFT model [1] and using the Unified Charge Control Model (UCCM). [2, 3] This model accounts for a non-exponential slope in the subthreshold regime by introducing a varying subthreshold slope and accounts for non-trivial capacitance dependence on the gate bias. It also accommodates the inclusion of the parasitics related to the gate impedance. These new features allowed us to obtain an excellent agreement with the measured I-V/C-V characteristics for both long and short n-channel and p-channel TFTs. The application of this new TFT model to the analysis of the TFT response requires accounting for non-local potential distribution in the device channel. This is achieved by using a multi-segment nonlinear transmission line model of the TFT channel reproducing the approach that has been previously used for the THz SPICE/ADS Si CMOS model implementation. As a possible application example, we simulated a TFT complementary inverter. Our simulations showed that using the phase-matched THz signal feeding should yield a very sensitive detection of THz radiation impinging on a short channel TFT. These results show that the TFT RFID and other applications could be extended into the THz range of frequencies.

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Su, Jinbao, Hui Yang, Weiguang Yang i Xiqing Zhang. "Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering". Journal of Vacuum Science & Technology B 40, nr 3 (maj 2022): 032201. http://dx.doi.org/10.1116/6.0001702.

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A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is transparent with an average optical transmittance over 80% in the visible range. The TFT shows excellent performances with a saturation mobility ( μSAT) of 41.0 cm2/V s, a threshold voltage ( VTH) of 2.4 V, a subthreshold swing of 0.5 V/decade, and a current on/off ratio ( ION /IOFF) of 6.8 × 108. The gate bias stress stability and stress recovery of the TFT are investigated. The threshold voltage shifts (Δ VTH) under negative and positive bias stress for 1 h are −9.4 and 10.0 V, respectively. After the stress is removed, Δ VTH under negative and positive stress recovery for 1 h are 7.0 and −3.6 V, respectively.

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Borchert, James W., Ute Zschieschang, Florian Letzkus, Michele Giorgio, R. Thomas Weitz, Mario Caironi, Joachim N. Burghartz, Sabine Ludwigs i Hagen Klauk. "Flexible low-voltage high-frequency organic thin-film transistors". Science Advances 6, nr 21 (maj 2020): eaaz5156. http://dx.doi.org/10.1126/sciadv.aaz5156.

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The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 1010, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.

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Singh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, Gian Paolo Suranna, Nicoletta Ditaranto, Cinzia Di Franco, Maria Vittoria Santacroce i in. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer". Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.

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Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and electrical performance of the ZnO TFT devices. The improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in the ZnO lattice due to Na⁺ doping. Moreover, the dissolution kinetics of the ZnO thin film in a liquid electrolyte opens the possible applicability of these devices as an active element in “transient” implantable systems.

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Jung, Seyeon, Taehoon Sung, Sein Lee i J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System". ECS Meeting Abstracts MA2022-01, nr 31 (7.07.2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.

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Recently, amorphous metal-oxide semiconductors (AOSs) such as indium gallium zinc oxide (IGZO) have attracted great attention with their lower power consumption and higher mobility than amorphous silicon in the display field. However, the threshold voltage (Vth) shift of IGZO thin film transistor (TFT) caused by their poor reliability leads to the drop panel luminance. Therefore, improvement of IGZO TFT reliability is necessary, which is largely influenced by oxygen vacancy and hydrogen. In particular, hydrogen has shown different roles inside the IGZO active layer by hydrogen concentration. At lower concentration, the hydrogen passivation of oxygen deficiency region induces the improvement of initial electrical characteristics and reliability [2]. Meanwhile, Vth shift and degradation reliability are generated at higher concentration owing to the hydrogen related defect states [3]. Therefore, controlling excess hydrogen is necessary for reliability enhancement. In this work, IGZO thin film was fabricated by cryopumping system instead of a turbo molecular pump (TMP) for radio frequency sputtering to reduce hydrogen concentration. Cryopump is an adsorption type that enables excellent evacuation ability of hydrogen and moisture taking up most of the partial pressure in high vacuum. As a result, deposition of IGZO thin film with lower hydrogen impurity is available. The hydrogen concentration in the IGZO thin film using both cryopump and TMP was quantitatively analyzed by elastic recoil detection (ERD) analysis. Then, electrical characteristics of the self-aligned top-gate structure TFTs fabricated by both pumps were measured with bias stress conditions. To sum up, we showed the improved reliability of IGZO TFT by controlling excess hydrogen using cryopumping system. Fig.1. (a) Schematic of RF magnetron sputtering process with cryopump. (b) TOF-SIMS depth profiles of hydrogen concentration in IGZO film using TMP and cryopump Acknowledgment This work was supported by the Korea Evaluation Institute of Industrial Technology(KEIT) grant funded by the Korea government (MOTIE) (No. 2021-11-1283) References Chung, Ui-Jin, et al. "15‐1: Invited Paper: Manufacturing Technology of LTPO TFT." SID Symposium Digest of Technical Papers. Vol. 51. No. 1. 2020. Hanyu, Yuichiro, et al. "Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors." Applied Physics Letters 103.20 (2013): 202114. Mativenga, Mallory, et al. "Origin of light instability in amorphous IGZO thin-film transistors and its suppression." Scientific reports 11.1 (2021): 1-12 Figure 1

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Kuo, Yue. "Welcome Remarks - H03: Thin Film Transistors 15 (TFT 15)". ECS Meeting Abstracts MA2020-02, nr 28 (23.11.2020): Open. http://dx.doi.org/10.1149/ma2020-0228openmtgabs.

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Wang, Chong, Liang Guo, Mingzhou Lei, Chao Wang, Xuefeng Chu, Fan Yang, Xiaohong Gao, Huan Wamg, Yaodan Chi i Xiaotian Yang. "Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors". Nanomaterials 12, nr 14 (13.07.2022): 2397. http://dx.doi.org/10.3390/nano12142397.

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A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μSAT) up to 12.64 cm2V−1s−1, a threshold voltage (VTH) of −6.61 V, a large on/off current ratio (Ion/Ioff) of 1.87 × 109, and an excellent subthreshold swing (SS) of 0.79 V/Decade.

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Dargar, Shashi Kant, J. K. Srivastava, Santosh Bharti i Abha Nyati. "Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation". International Journal of Electrical and Computer Engineering (IJECE) 7, nr 1 (1.02.2017): 144. http://dx.doi.org/10.11591/ijece.v7i1.pp144-151.

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As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×107 ~8.3×108, and a sub-threshold slope of 0.44V/dec. Sentaurus TCAD simulations is the tool which offers study of comprehensive behavior of semiconductor structures with ease. The simulation results of the TFT structure based on gallium nitride active channel have great prospective in the next-generation flat-panel display applications.

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Chen, Wei-De, Sheng-Po Chang i Wei-Lun Huang. "Characteristics of MgIn2O4 Thin Film Transistors Enhanced by Introducing an MgO Buffer Layer". Coatings 10, nr 12 (20.12.2020): 1261. http://dx.doi.org/10.3390/coatings10121261.

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In this work, an MgIn2O4 (MIO) thin film transistor (TFT) with a bottom gate structure was fabricated. The MIO channel layer was deposited by RF sputtering using a single MgIn2O4 target. The performance of MIO TFT was highly related to oxygen vacancies. As-deposited MIO TFT showed a low field-effect mobility due to doping of Mg. An MgO buffer layer was introduced to enhance the mobility of MIO TFT due to improvement of the interface with the channel layer. In addition, oxygen vacancies in the MIO channel were suppressed because of oxygen diffusion from the buffer layer. MIO TFT with a 5 nm MgO buffer layer showed an on/off current ratio of 9.68 × 103, a field-effect mobility of 4.81 cm2/V∙s, which was increased more than an order of magnitude compared with the device without a buffer layer, a threshold voltage of 2.01 V, and a subthreshold swing of 0.76 V/decade, which was improved more than 20% compared with the as-deposited one.

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Lee, Seung-Hwan, Hyun-Jun Jeong, Ki-Lim Han, GeonHo Baek i Jin-Seong Park. "An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition". Journal of Materials Chemistry C 9, nr 12 (2021): 4322–29. http://dx.doi.org/10.1039/d0tc05281g.

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Indium oxide/indicone hybrid film, grown via in situ ALD and MLD processes, was used as an active layer in a flexible TFT. The hybrid TFT showed no significant changes in device performance, even after 200 000 rolling cycles.

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Lin, Jium-Ming, Po-Kuang Chang i Zhong-Qing Hou. "INTEGRATING MICROARRAY PROBES AND AMPLIFIER ON AN ACTIVE RFID TAG FOR BIOSENSING AND MONITOR SYSTEM DESIGN". Biomedical Engineering: Applications, Basis and Communications 21, nr 06 (grudzień 2009): 421–25. http://dx.doi.org/10.4015/s1016237209001556.

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This research provides a microarray bio-probe device, integrated with Thin-Film-Transistor (TFT) amplifier formed of top-gate MOS (Metal-Oxide Semiconductor) transistors on an active RFID tag, to improve the signal-to-noise (S/N) ratio and impedance matching problems. The bio-probe device can be disposed to conform to the profile of a living body's portion so as to improve the electrical contact property.

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Shin, Hyunji, Hyeonju Lee, Bokyung Kim, Xue Zhang, Jin-Hyuk Bae i Jaehoon Park. "Effects of Blended Poly(3-hexylthiophene) and 6,13-bis(triisopropylsilylethynyl) pentacene Organic Semiconductors on the Photoresponse Characteristics of Thin-Film Transistors". Korean Journal of Metals and Materials 60, nr 3 (5.03.2022): 198–205. http://dx.doi.org/10.3365/kjmm.2022.60.3.198.

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In this study, we demonstrate high-performance optical wavelength-selective organic thin-film transistors (TFTs) that incorporate heterogeneous organic semiconductor materials, poly(3-hexylthiophene) (P3HT) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene). The electrical characteristics of the fabricated transistors were analyzed in the dark to determine how the P3HT:TIPS-pentacene ratio of the semiconductor affected the performance of the transistor. Specifically, the P3HT:TIPS-pentacene weight ratio was varied (1:0, 1:0.25, 1:0.5, 1:0.75, 1:1, and 0:1) by blending 1 wt% P3HT dissolved in chloroform, and 1 wt% TIPS-pentacene dissolved in anisole. The UV-visible light absorbance characteristics of the films containing the P3HT, TIPS-pentacene, and P3HT:TIPS-pentacene blends were analyzed. Monochromatic light at wavelengths of 515 and 450 nm was used to clarify the influence of irradiation on the electrical characteristics of the TFTs. The results confirmed that the TFT containing P3HT:TIPS-pentacene at a blending ratio of 1:0.5 had the largest light-to-dark current ratio, i.e., approximately 33.8 and 23.5 when exposed to monochromatic light at wavelengths of 515 nm and 450 nm, respectively. The TFT with the P3HT:TIPS-pentacene blending ratio of 1:0.5 exhibited the highest photosensitivity values of 261.9 and 49.6 upon irradiation with light at wavelengths of 515 nm and 450 nm, respectively. The observed improvement in the performance of the heterogeneously blended organic transistors is discussed in relation to the morphological structure and charge transport path of the P3HT:TIPS-pentacene blended semiconductor films.

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Lee, Won-Yong, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim i Jaewon Jang. "Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor". Electronics 9, nr 3 (22.03.2020): 523. http://dx.doi.org/10.3390/electronics9030523.

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Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO2 TFT was characterized by a field effect mobility, a subthreshold swing, and Ion/Ioff ratio of 4.23 cm2/Vs, 1.37 V/decade, and ~1 × 107, respectively. The added Mg suppressed oxygen-vacancy formation, thereby improving the bias stability. This work may pave the way for the development of alkaline-earth-metal-doped SnO2-based thin-film devices.

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Lee, Hyeonju, Xue Zhang, Jung Kim, Eui-Jik Kim i Jaehoon Park. "Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing". Materials 11, nr 11 (26.10.2018): 2103. http://dx.doi.org/10.3390/ma11112103.

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Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In2O3) TFTs by using the sol-gel solution process, and investigated the structural and chemical properties of the bilayer ZnO/In2O3 semiconductor and the electrical properties of these transistors. The thermogravimetric analysis results showed that ZnO and In2O3 films can be produced by the thermal annealing process at 350 °C. The grazing incidence X-ray diffraction patterns and X-ray photoemission spectroscopy results revealed that the intensity and position of characteristic peaks related to In2O3 in the bilayer structure were not affected by the underlying ZnO film. On the other hand, the electrical properties, such as drain current, threshold voltage, and field-effect mobility of the bilayer ZnO/In2O3 TFTs obviously improved, compared with those of the single-layer In2O3 TFTs. Considering the energy bands of ZnO and In2O3, the enhancement in the TFT performance is explained through the electron transport between ZnO and In2O3 and the formation of an internal electric field in the bilayer structure. In the negative gate-bias stress experiments, it was found that the internal electric field contributes to the electrical stability of the bilayer ZnO/In2O3 TFT by reducing the negative gate-bias-induced field and suppressing the trapping of holes in the TFT channel. Consequently, we suggest that the bilayer structure of solution-processed metal-oxide semiconductors is a viable means of enhancing the TFT performance.

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Zhang, Lirong, Huaming Yu, Wenping Xiao, Chun Liu, Junrong Chen, Manlan Guo, Huayu Gao, Baiquan Liu i Weijing Wu. "Strategies for Applications of Oxide-Based Thin Film Transistors". Electronics 11, nr 6 (20.03.2022): 960. http://dx.doi.org/10.3390/electronics11060960.

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Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, good process compatibility, optical transparency, low cost, and especially flexibility, oxide-based TFTs have already been adapted for not only displays (e.g., liquid crystal display (LCD), organic light emitting diode (OLED), micro-light-emitting diode (Micro-LED), virtual reality/augmented reality (VR/AR) and electronic paper displays (EPD)) but also large-area electronics, analog circuits, and digital circuits. Furthermore, as the requirement of TFT technology increases, low temperature poly-silicon and oxide (LTPO) TFTs, which combine p-type LTPS and n-type oxide TFT on the same substrate, have drawn further interest for realizing the hybrid complementary metal oxide semiconductor (CMOS) circuit. This invited review provides the current progress on applications of oxide-based TFTs. Typical device configurations of TFTs are first described. Then, the strategies to apply oxide-based TFTs for improving the display quality with different compensation technologies and obtaining higher performance integrated circuits are highlighted. Finally, an outlook for the future development of oxide-based TFTs is given.

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Liu, Wei-Sheng, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai i Hsing-Chun Kuo. "Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing". Membranes 12, nr 1 (30.12.2021): 49. http://dx.doi.org/10.3390/membranes12010049.

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In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O2 ratio from 16% to 33% in the argon–oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar–O2 plasma–treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar–O2 plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C–300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and ION/IOFF current ratio of the 33% O2 plasma–treated DG TFT devices improved to 58.8 cm2/V·s, 0.12 V/decade, and 5.46 × 108, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.

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Bermundo, Juan Paolo, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka i Yukiharu Uraoka. "Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane". MRS Proceedings 1633 (2014): 139–44. http://dx.doi.org/10.1557/opl.2014.118.

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ABSTRACTPolysilsesquioxane passivation layers were used to passivate bottom gate a-InGaZnO (a-IGZO) thin film transistors (TFT). The a-IGZO TFTs passivated with polysilsesquioxane showed highly stable behavior during positive bias stress, negative bias stress, and negative bias illumination stress. A voltage threshold shift of up to 0.1 V, less than -0.1 V and -2.3 V for positive bias stress, negative bias stress, and negative bias illumination stress, respectively. We also report the effect of reactive ion etching (RIE) on the electrical characteristics of a-InGaZnO (a-IGZO) thin-film transistors (TFT) passivated with the polysilsesquioxane-based passivation layers. We show how post-annealing treatment using two different atmosphere conditions: under O2 ambient and combination of N2 and O2 ambient (20% O2), can be performed to recover the initial characteristics. Furthermore, we present a highly stable novel polysilsesquioxane photosensitive passivation material that can be used to completely circumvent the reactive ion etching effects.

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Al Garni, S. E., i A. F. Qasrawi. "Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors". Functional Materials Letters 09, nr 02 (kwiecień 2016): 1650019. http://dx.doi.org/10.1142/s1793604716500193.

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In this work, (n)InSe/(p)ZnSe and (n)InSe/(p)ZnSe/(n)InSe heterojunction thin film transistor (TFT) devices are produced by the thermal evaporation technique. They are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy and optical spectroscopy techniques. While the InSe films are found to be amorphous, the ZnSe and InSe/ZnSe films exhibited polycrystalline nature of crystallization. The optical analysis has shown that these devices exhibit a conduction band offsets of 0.47 and valence band offsets of 0.67 and 0.74[Formula: see text]eV, respectively. In addition, while the dielectric spectra of the InSe and ZnSe displayed resonance peaks at 416 and 528[Formula: see text]THz, the dielectric spectra of InSe/ZnSe and InSe/ZnSe/InSe layers indicated two additional peaks at 305 and 350[Formula: see text]THz, respectively. On the other hand, the optical conductivity analysis and modeling in the light of free carrier absorption theory reflected low values of drift mobilities associated with incident alternating electric fields at terahertz frequencies. The drift mobility of the charge carrier particles at femtoseconds scattering times increased as a result of the ZnSe sandwiching between two InSe layers. The valence band offsets, the dielectric resonance at 305 and 350[Formula: see text]THz and the optical conductivity values nominate TFT devices for use in optoelectronics.

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Ouyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin i Hui Sun. "Research Progress of p-Type Oxide Thin-Film Transistors". Materials 15, nr 14 (8.07.2022): 4781. http://dx.doi.org/10.3390/ma15144781.

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The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.

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Hwang, Young Hwan, Seok-Jun Seo i Byeong-Soo Bae. "Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor". Journal of Materials Research 25, nr 4 (kwiecień 2010): 695–700. http://dx.doi.org/10.1557/jmr.2010.0103.

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Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operates in a depletion mode, shows n-type semiconductor behavior, and is highly transparent (>90%) within the visible light range. It exhibits a channel mobility of 9.4 cm2/V·s, a subthreshold slope of 3.3 V/decade, and an on-to-off current ratio greater than 105. In addition, the result of N2 annealing shows the possibility of improvement in electrical property of the ZnO TFTs.

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Kwon, Choi, Bae i Park. "Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films". Crystals 9, nr 12 (28.11.2019): 634. http://dx.doi.org/10.3390/cryst9120634.

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We show that transfer hysteresis for a pentacene thin film transistor (TFT) with a low-temperature solution-processed zirconia (ZrOx) gate insulator can be remarkably reduced by modifying the ZrOx surface with a thin layer of crosslinked poly(4-vinylphenol) (c-PVP). Pentacene TFTs with bare ZrOx and c-PVP stacked ZrOx gate insulators were fabricated, and their hysteresis behaviors compared. The different gate insulators exhibited no significant surface morphology or capacitance differences. The threshold voltage shift magnitude decreased by approximately 71% for the TFT with the c-PVP stacked ZrOx gate insulator compared with the bare ZrOx gate insulator, with 0.75 ± 0.05 and 0.22 ± 0.03 V threshold voltage shifts for the bare ZrOx and c-PVP stacked ZrOx gate insulators, respectively. The hysteresis reduction was attributed to effectively covering hysteresis-inducing charge trapping sites on ZrOx surfaces.

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Kuo, Yue. "Thin Film Transistors with Layered a-Si:H Structure". MRS Proceedings 377 (1995). http://dx.doi.org/10.1557/proc-377-701.

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ABSTRACTThin film transistors TFTs with the layered a-Si:H structure are presented and discussed. Compared with the conventional single layer a-Si:H TFT, transistor characteristics of this new structure can be superior or inferior, depending on the deposition condition and number of the bulk (non-interface) a-Si:H layers. The mechanism influencing transistor characteristics is discussed. Changes of these TFTs' characteristics are not significant, e.g., the mobility varies within 20%. More data are being collected to verify the statistical significance of this kind of TFT.

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"Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics". International Journal of Engineering and Advanced Technology 9, nr 5 (30.06.2020): 270–73. http://dx.doi.org/10.35940/ijeat.e9477.069520.

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The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.

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