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Artykuły w czasopismach na temat "Thin-film solar cells"

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Benka, Stephen G. "Thin-film solar cells". Physics Today 58, nr 12 (grudzień 2005): 9. http://dx.doi.org/10.1063/1.4796845.

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Aberle, Armin G. "Thin-film solar cells". Thin Solid Films 517, nr 17 (lipiec 2009): 4706–10. http://dx.doi.org/10.1016/j.tsf.2009.03.056.

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Hill, Robert. "Thin film solar cells". Solar Energy 41, nr 3 (1988): 298–99. http://dx.doi.org/10.1016/0038-092x(88)90150-8.

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Bloss, W. H., F. Pfisterer, M. Schubert i T. Walter. "Thin-film solar cells". Progress in Photovoltaics: Research and Applications 3, nr 1 (1995): 3–24. http://dx.doi.org/10.1002/pip.4670030102.

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Nagamalleswari, D., i Y. B. Kishore Kumar. "Growth of Cu2ZnSnS4 Thin Film Solar Cells Using Chemical Synthesis". Indian Journal Of Science And Technology 15, nr 28 (28.07.2022): 1399–405. http://dx.doi.org/10.17485/ijst/v15i28.194.

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Lara-Padilla, E., Maximino Avendano-Alejo i L. Castaneda. "Transparent Conducting Oxides: Selected Materials for Thin Film Solar Cells". International Journal of Science and Research (IJSR) 11, nr 7 (5.07.2022): 372–80. http://dx.doi.org/10.21275/sr22628033513.

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Wang, Xiao Yan, Qiong Wu, Hai Yan Li, Hai Dong Ju, Hai Yang, Jin Long Luo, Li Ying Pu, Shan Du i Hai Wang. "Thin Film Solar Cells and their Development Prospects in Yunnan". Advanced Materials Research 651 (styczeń 2013): 29–32. http://dx.doi.org/10.4028/www.scientific.net/amr.651.29.

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Thin-film solar cells (TFSC) have made great progress during the past decade and consequently are now attracting extensive academic and commercial interest because of their potential advantages: lightweight, flexible, low cost, and high-throughput production. The strengths and weaknesses of different thin-film solar cells: amorphous silicon thin-film solar cells, multi-compound thin-film solar cells, organic thin-film solar cells and dye-sensitized solar cells are discussed. Finally, prospects for the development of thin film solar cell technology in Yunnan province are discussed.
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GWAK, Jihye. "Compound Thin-Film Solar Cells". Physics and High Technology 28, nr 5 (31.05.2019): 7–12. http://dx.doi.org/10.3938/phit.28.017.

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Suntola, T. "CdTe Thin-Film Solar Cells". MRS Bulletin 18, nr 10 (październik 1993): 45–47. http://dx.doi.org/10.1557/s088376940003829x.

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Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.
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Beaucarne, Guy. "Silicon Thin-Film Solar Cells". Advances in OptoElectronics 2007 (17.12.2007): 1–12. http://dx.doi.org/10.1155/2007/36970.

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We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD). In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si) is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.
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Rozprawy doktorskie na temat "Thin-film solar cells"

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Inns, Daniel Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "ALICIA polycrystalline silicon thin-film solar cells". Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2007. http://handle.unsw.edu.au/1959.4/43600.

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Thin-film silicon photovoltaics are seen as a good possibility for reducing the cost of solar electricity. The focus of this thesis is the ALICIA cell, a thin-film polycrystalline silicon solar cell made on a glass superstrate. The name ALICIA comes from the fabrication steps - ALuminium Induced Crystallisation, Ion Assisted deposition. The concept is to form a high-quality crystalline silicon layer on glass by Aluminium Induced Crystallisation (AIC). This is then the template from which to epitaxially grow the solar cell structure by Ion Assisted Deposition (IAD). IAD allows high-rate silicon epitaxy at low temperatures compatible with glass. In thin-film solar cells, light trapping is critical to increase the absorption of the solar spectrum. ALICIA cells have been fabricated on textured glass sheets, increasing light absorption due to their anti-reflection nature and light trapping properties. A 1.8 μm thick textured ALICIA cell absorbs 55% of the AM1.5G spectrum without a back-surface reflector, or 76% with an optimal reflector. Experimentally, Pigmented Diffuse Reflectors (PDRs) have been shown to be the best reflector. These highly reflective and optically diffuse materials increase the light-trapping potential and hence the short-circuit currents of ALICIA cells. In textured cells, the current increased by almost 30% compared to using a simple aluminium reflector. Current densities up to 13.7 mA/cm2 were achieved by application of a PDR to the best ALICIA cells. The electronic quality of the absorber layer of ALICIA cells is strongly determined by the epitaxy process. Very high-rate epitaxial growth decreases the crystalline quality of the epitaxial layer, but nevertheless increases the short-circuit current density of the solar cells. This indicates that the diffusion length in the absorber layer of the ALICIA cell is primarily limited by contamination, not crystal quality. Further gains in current density can therefore be achieved by increasing the deposition rate of the absorber layer, or by improving the vacuum quality. Large-area ALICIA cells were then fabricated, and series resistance reduced by using an interdigitated metallisation scheme. The best measured efficiency was 2.65%, with considerable efficiency gains still possible from optimisation of the epitaxial growth and metallisation processes.
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Thompson, Claire Louise. "Electrochemical routes to thin film solar cells". Thesis, University of Bath, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.547634.

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Yoshiikawa, Osamu. "Studies on organic thin film solar cells". Kyoto University, 2009. http://hdl.handle.net/2433/123895.

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Kyoto University (京都大学)
0048
新制・課程博士
博士(エネルギー科学)
甲第14742号
エネ博第195号
新制||エネ||44(附属図書館)
UT51-2009-D454
京都大学大学院エネルギー科学研究科エネルギー基礎科学専攻
(主査)教授 八尾 健, 教授 石原 慶一, 教授 辻井 敬亘
学位規則第4条第1項該当
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Danaki, Paraskevi. "Radiation hardness of thin film solar cells". Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-386054.

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Song, Yang Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "Dielectric thin film applications for silicon solar cells". Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2009. http://handle.unsw.edu.au/1959.4/44486.

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Dielectric thin films have a long history in silicon photovoltaics. Due to the specific physical properties, they can function as passivation layer in solar cells. Also, they can be used as antireflection coating layers on top of the devices. They can improve the back surface reflectance if proper dielectric layers combination is used. What??s more, they can protect areas by masking during chemical etching, diffusion, metallization among the whole fabrication process. Crystalline silicon solar cell can be passivated by two ways: one is to deposit dielectric thin films to saturate the dangling bonds; the other is to introduce surface electrical field and repel back the minority carriers. This thesis explores thermally grown SiO2 and sputtered Si3N4(:H) to passivate n-type and thermal evaporation AlF3 to passivate p-type Float Zone silicon wafers, respectively. Sputtering is a cheap passivation method to replace PECVD in industry usage, but all sputtered samples are more likely to have encountered surface damage from neutral Ar and secondary electrons, both coming from the sputtered target. AlF3/SiO2 multi-layer stack is a negative charge combination; p inversion layer will form on the wafer surface. Light trapping is an important part in solar cell research work. In order to enhance the reflectance and improve the absorption possibility of near infrared photons, especially for high efficiency PERL cell application, the back surface structure is optimized in this work. Results show SiO2/Ag is a very good choice to replace SiO2/Al back reflectors. The maximum back surface reflectance is 97.82%. At the same time, SiO2/Ag has excellent internal angle dependence of reflectance, which is beneficial for surface textured cells. A ZnS/MgF2/SiO2/Al(Ag) superlattice can improve the back reflectance, but it is sensitive to incident angle inside the silicon wafer. If planar wafers are used to investigate all kinds of back reflectors, and an 8 degrees incident angle is fixed for typical spectrometry measurement, the results are easy to predict by Wvase software simulation. If a textured surface is considered, the light path inside the silicon wafer is very complicated and hard to calculate and simulate. The best way to evaluate the result is through experiment.
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Desai, Darshini. "Electrical characterization of thin film CdTe solar cells". Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 320 p, 2007. http://proquest.umi.com/pqdweb?did=1257806491&sid=6&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Schuster, Christian. "Diffractive optics for thin-film silicon solar cells". Thesis, University of York, 2015. http://etheses.whiterose.ac.uk/9083/.

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Thin-film silicon solar cells have the potential to convert sunlight into electricity at high efficiency, low cost and without generating pollutants. However, they need to become more competitive with conventional energy technologies by increasing their efficiency. One of the key efficiency limitations of using thin silicon absorber materials relates to the optical loss of low-energy photons, because the absorption coefficient of silicon decreases strongly for these low-energy photons in the red and near-infrared, such that the absorption length becomes longer than the absorber layer thickness. If, in contrast, the incident light was redirected and trapped into the plane of the silicon slab, a thin-film could absorb as much light as a thick layer. Diffractive textures can not only efficiently scatter the low-energy photons, but are also able to suppress the reflection of the incident sunlight. In order to take advantage of the full benefits that textures can offer, I outline a simple layer transfer technique that allows the structuring of a thin-film independently from both sides, and use absorption measurements to show that structuring on both sides is favourable compared to structuring on one side only. I also introduce a figure-of-merit that can objectively and quantitatively assess the benefit of the structuring itself, which allows me to benchmark state-of-the-art proposals and to deduce some important design rules. Minimising the parasitic losses, for example, is of critical importance, as the desired scattering properties are directly proportional to these losses. To study the impact of parasitics, I quantify the useful absorption enhancement of two different light trapping mechanisms, i.e. diffractive vs plasmonic, based on a fair and simple experimental comparison. The experiment demonstrates that diffractive light-trapping is a better choice for photovoltaic applications, because plasmonic structures accumulate the parasitical losses by multiple interactions with the trapped light. The results of this thesis therefore highlight the importance of diffractive structures as an effective way of trapping more light in a thinner solar cell device, and will help to define guidelines for new designs that may overcome the 30% power conversion efficiency limit.
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Marinkovic, Marko [Verfasser]. "Contact resistance effects in thin film solar cells and thin film transistors / Marko Marinkovic". Bremen : IRC-Library, Information Resource Center der Jacobs University Bremen, 2013. http://d-nb.info/1037014243/34.

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Chang, Shang-wen. "Cu₂S/ZnCdS thin film heterojunction solar cell studies". Diss., Virginia Polytechnic Institute and State University, 1985. http://hdl.handle.net/10919/54740.

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Cu₂S/CdS solar cells have been studied extensively for the past two decades due to their potentially high efficiencies per unit cost. The operation and characteristics of Cu₂S/CdS solar cells are fairly well understood. However, the properties of the newer Cu₂S/ZnCdS cell type are not well understood. The main goals of this thesis were to compare Cu₂S/CdS and Cu₂S/ZnCdS cells using Cu₂S/CdS cells as a reference, and to understand the operation and properties of Cu₂S/ZnCdS cells in order to improve cell performance. Four different measurements were used in this research to achieve these goals. They were; electrical, spectral, capacitance and deep trap measurements. I-V measurements give important electrical parameters of the cells; cell efficiency, fill factor, short circuit current, open circuit voltage, shunt resistance and series resistance are reported. From a In(ISC) versus VOC measurement, the diode factor, A, was found to be about 1 for Cu₂S/CdS, Cu₂S/Zn0.11Cd0.89S, and about 1.2 for Cu₂S/Zn0.25Cd0.75S cells. The relation between In(Joo) (current density) and ϕ (potential barrier height) is linear for both types of cells. The slope of this linear relationship increases as the content of Zn increases in ZnxCd1-xS. Under air mass 1 (100 mW/cm²) illumination, it was found that VOC decays and capacitance increases for Cu₂S/ZnCdS cells. This is attributed to electron relaxation from deep traps near the junction. Spectral response with and without bias light were measured for both Cu₂S/CdS and Cu₂S/ZnCdS cells. White and blue bias light enhance the spectral response, while red bias light quenches the response. This is attributed to ionization and filling of deep traps near the junction. Capacitance measurements on both cell types show that 1/C² versus voltage is quite flat, which indicates the existence of an i-layer (insulation layer) in the CdS or ZnCdS near the junction. Three methods–photocapacitance, space-charge-limited current, and thermally stimulated. current techniques–were used for deep trap measurements. Photocapacitance measurements indicate one deep donor energy and two deep acceptor energy levels. These trap energies become larger as the content of Zn in ZnCdS increases. Space-charge-limited current measurements give a trap density of the order of 10¹⁶ cm³ for both cell types. The shallow energy trap is found to be 0.26 eV below the conduction band edge of CdS. The occurrence of a current-saturated region for Cu₂S/ZnCdS is attributed to the filling of the interface traps near the junction. Thermally stimulated current measurements give two energy levels below the conduction band of CdS; 0.05 eV and 0.26 eV. From the above results, several differences between the Cu₂S/CdS and the Cu₂S/ZnCdS cells can be seen. The Cu₂S/ZnCdS cells show stronger red quenching, smaller electron lifetime at the interface near the junction, and deeper traps than the Cu₂S/CdS cells. These differences can account for the decline of ISC and the VOC decay. The smaller ISC for the Cu₂S/ZnCdS cells can also possibly result from smaller electron lifetime at the interface, larger interface recombination velocity, different deep trap levels, and enhanced Zn concentration near the junction. The VOC decay for the Cu₂S/ZnCdS cells is mostly due to long decay of charge. Longer decay could be attributed to deeper traps.
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Tetali, Bhaskar Reddy. "Stability studies of CdTe/CdS thin film solar cells". [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001135.

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Książki na temat "Thin-film solar cells"

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Hamakawa, Yoshihiro, red. Thin-Film Solar Cells. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-10549-8.

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Poortmans, Jef, i Vladimir Arkhipov, red. Thin Film Solar Cells. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.

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Abban, Sahin, i Kaya Hakim, red. Thin-film solar cells. Hauppauge, N.Y: Nova Science Publishers, 2009.

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Kosyachenko, Leonid A. Solar cells: Thin-film technologies. Rijeka: InTech, 2011.

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(Society), SPIE, red. Thin film solar technology III. Bellingham: SPIE, 2011.

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Ahmad, Faiz, Akhlesh Lakhtakia i Peter B. Monk. Theory of Graded-Bandgap Thin-Film Solar Cells. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-031-02024-7.

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Abou-Ras, Daniel, Thomas Kirchartz i Uwe Rau, red. Advanced Characterization Techniques for Thin Film Solar Cells. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636280.

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Schuster, Christian Stefano. Diffractive Optics for Thin-Film Silicon Solar Cells. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-44278-5.

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Abou-Ras, Daniel, Thomas Kirchartz i Uwe Rau, red. Advanced Characterization Techniques for Thin Film Solar Cells. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2016. http://dx.doi.org/10.1002/9783527699025.

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service), ScienceDirect (Online, red. Cu(InGa)Se2 based thin film solar cells. London: Academic, 2009.

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Części książek na temat "Thin-film solar cells"

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Auf der Maur, Matthias, Tim Albes i Alessio Gagliardi. "Thin-Film Solar Cells". W Handbook of Optoelectronic Device Modeling and Simulation, 497–538. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] |: CRC Press, 2017. http://dx.doi.org/10.4324/9781315152318-18.

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Wagner, Sigurd. "Thin Film Solar Cells". W Seventh E.C. Photovoltaic Solar Energy Conference, 452–58. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_80.

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Klenk, Renier, i Martha Ch Lux-Steiner. "Chalcopyrite Based Solar Cells". W Thin Film Solar Cells, 237–75. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch6.

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Grätzel, Michael. "Nanocrystalline Injection Solar Cells". W Thin Film Solar Cells, 363–85. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch9.

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Wronski, Christopher R., i Nicolas Wyrsch. "Silicon Solar Cells silicon solar cell , Thin-film silicon solar cell thin-film". W Solar Energy, 270–322. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-5806-7_462.

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Poortmans, Jef. "Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers". W Thin Film Solar Cells, 1–38. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch1.

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Mozer, A. J., i N. S. Sariciftci. "Charge Transport and Recombination in Donor-Acceptor Bulk Heterojunction Solar Cells". W Thin Film Solar Cells, 387–426. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch10.

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Zweibel, Ken. "The Terawatt Challenge for Thin Film Photovoltaics". W Thin Film Solar Cells, 427–62. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch11.

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Reber, Stefan, Thomas Kieliba i Sandra Bau. "Crystalline Silicon Thin Film Solar Cells on Foreign Substrates by High Temperature Deposition and Recrystallization". W Thin Film Solar Cells, 39–95. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch2.

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Beaucarne, Guy, i Abdellilah Slaoui. "Thin Film Polycrystalline Silicon Solar Cells". W Thin Film Solar Cells, 97–131. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch3.

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Streszczenia konferencji na temat "Thin-film solar cells"

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Chen, Sheng-Hui. "Thin Film Solar Cells". W Optical Interference Coatings. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/oic.2016.md.1.

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Klenk, R., i Hans W. Schock. "Thin film solar cells". W Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, redaktorzy Volker Wittwer, Claes G. Granqvist i Carl M. Lampert. SPIE, 1994. http://dx.doi.org/10.1117/12.185420.

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Huang, James, James Dimmock, Christian Lang, Stephen Day i Jon Heffernan. "Nanostructured Thin Film Solar Cells". W Optical Nanostructures for Photovoltaics. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/pv.2010.pma6.

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Loi, Maria Antonietta. "Sn-based Hybrid Perovskite Solar Cells from solar cells to hot electrons". W 3rd International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics. Valencia: Fundació Scito, 2017. http://dx.doi.org/10.29363/nanoge.abxpvperopto.2018.066.

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Eberhardt, Gabriele, Henrik Banse, Uwe Wagner i Thomas Peschel. "Structuring of thin film solar cells". W SPIE LASE, redaktorzy Wilhelm Pfleging, Yongfeng Lu, Kunihiko Washio, Jun Amako i Willem Hoving. SPIE, 2010. http://dx.doi.org/10.1117/12.846821.

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Kost, Alan R., David Rauh, Jane Bertone, Paul Willard, Barry D. Bruce, Elizabeth H. Steenbergen, Yong-Hang Zhang, Ki-Wan Jeon i Dong-Kyun Seo. "Optically tandem thin film solar cells". W 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411397.

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Breeze, A. J. "Next generation thin-film solar cells". W 2008 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2008. http://dx.doi.org/10.1109/relphy.2008.4558879.

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Fahr, Stephan, Carsten Rockstuhl, Falk Lederer i Dmitry N. Chigrin. "Plasmonics in Thin Film Solar Cells". W THEORETICAL AND COMPUTATIONAL NANOPHOTONICS (TACONA-PHOTONICS 2009): Proceedings of the 2nd International Workshop. AIP, 2009. http://dx.doi.org/10.1063/1.3253920.

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Zhu, Weijia, Yiming Xi i Zhenglei Xi. ""Optical matching system" of space silicon solar cells". W Third International Conference on Thin Film Physics and Applications, redaktorzy Shixun Zhou, Yongling Wang, Yi-Xin Chen i Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300643.

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Bisquert, Juan. "Interfacial phenomena governing kinetics of perovskite solar cells". W 1st Interfaces in Organic and Hybrid Thin-Film Optoelectronics. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.inform.2019.047.

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Raporty organizacyjne na temat "Thin-film solar cells"

1

Chang, Yun-Chorng. Surface-Plasmon Enhanced Organic Thin-Film Solar Cells. Fort Belvoir, VA: Defense Technical Information Center, luty 2010. http://dx.doi.org/10.21236/ada513773.

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Kapur, V., B. Basol i R. Kullberg. High-efficiency copper ternary thin film solar cells. Office of Scientific and Technical Information (OSTI), wrzesień 1989. http://dx.doi.org/10.2172/5206355.

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Gordon, R. G., R. Broomhall-Dillard, X. Liu, D. Pang i J. Barton. Transparent Conductors and Barrier Layers for Thin Film Solar Cells:. Office of Scientific and Technical Information (OSTI), grudzień 2001. http://dx.doi.org/10.2172/15000095.

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Meyers, P. Polycrystalline thin film cadmium telluride n-i-p solar cells. Office of Scientific and Technical Information (OSTI), czerwiec 1990. http://dx.doi.org/10.2172/6772805.

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Walton, James. Thin Film Group II-VI Solar Cells Based on Band-Offsets. Portland State University Library, styczeń 2000. http://dx.doi.org/10.15760/etd.435.

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Compaan, A. D., X. Deng i R. G. Bohn. High efficiency thin film CdTe and a-Si based solar cells. Office of Scientific and Technical Information (OSTI), styczeń 2000. http://dx.doi.org/10.2172/754623.

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Chu, T. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Office of Scientific and Technical Information (OSTI), październik 1989. http://dx.doi.org/10.2172/5657996.

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Katzman, Daniel B. Design and Optimization of Copper Indium Gallium Selenide Thin Film Solar Cells. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2015. http://dx.doi.org/10.21236/ad1009063.

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VanSant, Kaitlyn. Thin Film Solar Cells Using ZnO Nanowires, Organic Semiconductors and Quantum Dots. Portland State University Library, styczeń 2000. http://dx.doi.org/10.15760/etd.2692.

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Trefny, J. U., i D. Mao. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report. Office of Scientific and Technical Information (OSTI), styczeń 1998. http://dx.doi.org/10.2172/564269.

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