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Gotowa bibliografia na temat „Thin film”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 22 czerwca 2024

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Artykuły w czasopismach na temat "Thin film"

Phillips, Julia M. "Substrate Selection for Thin-Film Growth". MRS Bulletin 20, nr 4 (kwiecień 1995): 35–39. http://dx.doi.org/10.1557/s0883769400044651.

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Although it is an integral part of any structure involving a film, the substrate is often taken for granted. The choice of substrate is, however, one of the most important materials issues in thin-film growth. This article focuses on substrates for thin films and will provide criteria for selecting the proper material needed to fill specific application requirements. As will become obvious, the ideal substrate for a given film often does not exist. Specific applications require different substrate materials that offer an acceptable compromise for the purpose at hand. Ideally, the substrate should give mechanical support but not interact with the film except to provide sufficient adhesion, and in many cases, the provision of a template for atomic ordering. In practice, however, the substrate exerts considerable influence on film characteristics. The search for viable substrate materials is an active area of research.

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Singh, Vaibhav, i Gaurav Saxena. "Self-Rechargeable Paper Thin-Film Batteries". International Journal of Trend in Scientific Research and Development Volume-3, Issue-3 (30.04.2019): 1213–15. http://dx.doi.org/10.31142/ijtsrd22872.

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Cong, Hailin, i Weixiao Cao. "Thin Film Interference of Colloidal Thin Films". Langmuir 20, nr 19 (wrzesień 2004): 8049–53. http://dx.doi.org/10.1021/la049118+.

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Messier, Russell. "Thin Film Deposition Processes". MRS Bulletin 13, nr 11 (listopad 1988): 18–21. http://dx.doi.org/10.1557/s0883769400063879.

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Thin film materials pervade our everyday life as transparent conductors in LCD watches and computer displays and in defrosters for automobiles... antireflection coatings for camera lenses… optical fibers for communication … architectural glass coatings for both color and energy efficiency… solar cells… decorative coatings on plastics such as for toys and automobiles parts… a whole host of electronic and optoelectronic devices… hard coatings for cutting tools, drill bits, and bearings … even metallic coatings inside potato chip bags to keep the chips crisp!Without thin films our lifestyles would be drastically different. And this trend toward increased use of thin film technology will only continue.The varied reasons for using thin films and the specific deposition processes for preparing them are often complex; but usually relate to function, cost, beauty, materials and energy efficiency, and performance. In addition to technological applications, scientists are finding thin films to be an invaluable tool for investigating new physical phenomena, even at the quantum level. For instance, two of the most important new materials—high temperature ceramic superconductors and diamond coatings — are currently being made by several thin film deposition processes in order to explore both their scientific and technological potential.Just 25 years ago the variety of deposition processes for preparing thin films was quite limited. Thin film scientists and technologists had at their disposal electrodeposition, elementary chemical vapor deposition, evaporation, and dc sputtering. Commercial equipment for electron-beam evaporation, a mainstay in the optical coatings industry, was just being developed. Most of the deposition processes reviewed in this and next month's MRS BULLETIN were either not commercially available or were not even conceived of then.

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Kumar, Vikas. "Unraveling Squeeze Film Dynamics: Illuminating Thin Film Properties and Hydrodynamic Behavior". International Journal of Science and Research (IJSR) 13, nr 5 (5.05.2024): 1352–58. http://dx.doi.org/10.21275/sr24521113452.

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Muralt, Paul. "Piezoelectric Thin Film Devices". Advances in Science and Technology 67 (październik 2010): 64–73. http://dx.doi.org/10.4028/www.scientific.net/ast.67.64.

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The field of piezoelectric thin films for micro and nano systems combines an exciting richness of potential applications with many attractive scientific topics on materials processing and physical properties. Piezoelectricity transforms a mechanical stimulus into an electrical signal, or electrical energy. Miniature thin film devices detect and measure vibrations and acoustic waves, as well as generate electrical power in the mW range by the harvesting of vibration energy. An electrical stimulus can be applied to generate acoustic waves, to damp actively vibrations detected by the same film, or to drive a micro robot. The ability to act in both directions of transfer between mechanical and electrical energy allows for high-performing filters, oscillators, and gravimetric sensors working at frequencies up to10 to 20 GHz. While rigid piezoelectric thin films like AlN excel in GHz applications such as RF filters, ferroelectric thin films like Pb(Zr,Ti)O3 are more efficient in energy conversion and include as further dimension a programmable polarity, which is useful for memory applications.

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Tsuchiya, Toshiyuki, i Hirofumi Funabashi. "OS06W0384 Young's modulus measurement of polysilicon thin film using thin film tensile tester equipped with electrostatic force grip". Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS06W0384. http://dx.doi.org/10.1299/jsmeatem.2003.2._os06w0384.

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV i REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES". International Journal of High Speed Electronics and Systems 12, nr 02 (czerwiec 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.

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Chakraborty, Jay. "Phase Transformation in Ultra-Thin Films". Advanced Materials Research 996 (sierpień 2014): 860–65. http://dx.doi.org/10.4028/www.scientific.net/amr.996.860.

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Thickness dependent structural phase transformation in thin polycrystalline metal films has been reviewed. Various effects of film thickness reduction on film microstructure have been identified. Film thickness dependent structural phase transformation has been treated thermodynamically taking polycrystalline titanium (Ti) thin film as model example.

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Judy, Jack H. "Thin Film Recording Media". MRS Bulletin 15, nr 3 (marzec 1990): 63–72. http://dx.doi.org/10.1557/s088376940006019x.

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The rapidly growing demand for magnetic information storage systems at lower cost and higher capacity has driven the magnetic recording industry to accelerate development of thin film magnetic recording media. The ultimate recording density depends on the bit transition lengths, as shown in Figure 1 for various media, and on signal-to-noise ratio, which is proportional to the number of particles per bit. Longitudinal thin film media bit transition lengths are limited by thickness, magnetic properties, and zig-zag magnetic domain microstructures at the transitions, whereas in perpendicular media the principal limitation is the diameter of the grains. The recent development of quasi-particulate longitudinal and perpendicular thin film media indicates that areal bit densities substantially exceeding 109 bits/inch2 will be achieved in the future.This article will review magnetic phenomena relevant to thin film recording media, describe macromagnetic and micromagnetic characterization techniques, survey the development of state-of-the-art thin film media, correlate micromagnetics with magnetic properties, media noise, and recording performance, and discuss future requirements of longitudinal and perpendicular thin film recording media.Ferromagnetic and ferrimagnetic thin films exhibit a nonlinear, multivalued, and hysteretic relationship between the magnetic dipole moments per volume or magnetization M and the magnetizing field intensity H as shown in Figure 2 for the component of M in the direction of H.

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Rozprawy doktorskie na temat "Thin film"

Abusabee, K. M. "Thin film engineering for transparent thin film transistors". Thesis, Nottingham Trent University, 2014. http://irep.ntu.ac.uk/id/eprint/127/.

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Zinc oxide (ZnO) and Indium Gallium Zinc Oxide (IGZO) thin films are of interest as oxide semiconductors in thin film transistor (TFT) applications, due to visible light transparency, and low deposition temperature. There is particular interest in ZnO and IGZO based transparent TFT devices fabricated at low temperature on low cost flexible substrates. However, thermal annealing processes are typically required to ensure a good performance, suitable long term stability, and to control the point defects which affect the electrical characteristics. Hence there is interest in post deposition processing techniques, particularly where alternatives to high temperature thermal treatments can be utilised in combination with low temperature substrates. This thesis presents the results of a series of experimental studies as an investigation into photonic (excimer laser) processing of low temperature ZnO and IGZO thin films deposited by RF magnetron sputtering and/or by high target utilisation sputtering (HiTUS), to optimise the microstructure and electrical properties for potential use in thin film electronic applications. ZnO thin films were grown at various deposition parameters by varying oxygen flow rates, RF power, oxygen concentration, and growth temperatures. Subsequently, the films were subjected to three different annealing processes: (i) Thermal Annealing (furnace): samples were thermally annealed in air at temperatures ranging from 300 °C to 880 °C for 1 hour. (ii) Rapid Thermal Annealing: samples were annealed in nitrogen and oxygen environment at temperatures of 600 °C, 740 °C, 880 °C, and 1000 °C, and dwell times of 1-16 s. (iii) Excimer laser annealing: samples were annealed at ambient conditions using a Lambda Physik 305i 284 nm, 20 ns pulse KrF excimer laser with a beam delivery system providing a homogenised 10 mm x 10 mm uniform irradiation at the sample plane. Processing was undertaken at fluences in the range of 0 to 350 mJ/cm2 at single and multiple pulses. IGZO thin films were also investigated following RF magnetron deposition without intentional substrate heating and at various other deposition conditions, followed by laser processing in air at laser energy densities in the range of 0 to 175 mJ/cm2 with single pulse. Processed ZnO films were characterised by room temperature photoluminescence excitation which exhibited that laser annealing at high fluences resulted in suppression of the observed visible deep level emission (DLE) with evolution of a strong UV near band emission (NBE) peak, indicating a reduction of intrinsic defects without film degradation or materials loss that occurred by thermal and rapid thermal annealing. Also the intensity of the NBE peak was strongly influenced by the films growth temperature, with the results showing that as the growth temperature increased beyond ambient; the intensity of the resultant NBE peak decreased as a function of laser energy. TEM studies demonstrate that laser processing provides a controlled in-depth crystallisation and modification of ZnO films. Therefore, laser processing is shown to be a suitable technique to control the crystal microstructure and defect properties as a function of two lasers processing parameters (fluence, number of pulses) - realising optimised film properties as a localised region isolated from the substrate or sensitive underlying layers. In terms of electrical properties, the results indicated a significant drop in sheet resistance as a function of laser anneal from highly resistive (>5 MΩ/sq.) to about 860 Ω/sq. To produce IGZO thin films without intentional substrate heating with lowest sheet resistance as a function of laser processing, low deposition pressure, low oxygen concentration, and high RF power are required. Room temperature Hall effect mobility of 50 nm thick IGZO increased significantly as the laser energy density increased from 75 mJ/cm2 to 100 mJ/cm2 at single pulse reaching values of 11.1 cm2/Vs and 13.9 cm2/Vs respectively.

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Mackay, Ian. "Thin film electroluminescence /". Online version of thesis, 1989. http://hdl.handle.net/1850/10551.

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Han, Sanggil. "Cu2O thin films for p-type metal oxide thin film transistors". Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/285099.

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The rapid progress of n-type metal oxide thin film transistors (TFTs) has motivated research on p-type metal oxide TFTs in order to realise metal oxide-based CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable active layer for p-type metal oxide TFTs. The two most significant challenges for achieving good quality Cu2O TFTs are to overcome the low field-effect mobility and an unacceptably high off-state current that are a feature of devices that have been reported to date. This dissertation focuses on improving the carrier mobility, and identifying the main origins of the low field-effect mobility and high off-state current in Cu2O TFTs. This work has three major findings. The first major outcome is a demonstration that vacuum annealing can be used to improve the carrier mobility in Cu2O without phase conversion, such as oxidation (CuO) or oxide reduction (Cu). In order to allow an in-depth discussion on the main origins of the very low carrier mobility in as-deposited films and the mobility enhancement by annealing, a quantitative analysis of the relative dominance of the main conduction mechanisms (i.e. trap-limited and grain-boundary-limited conduction) is performed. This shows that the low carrier mobility of as-deposited Cu2O is due to significant grain-boundary-limited conduction. In contrast, after annealing, grain-boundary-limited conduction becomes insignificant due to a considerable reduction in the energy barrier height at grain boundaries, and therefore trap-limited conduction dominates. A further mobility improvement by an increase in annealing temperature is explained by a reduction in the effect of trap-limited conduction resulting from a decrease in tail state density. The second major outcome of this work is the observation that grain orientation ([111] or [100] direction) of sputter-deposited Cu2O can be varied by control of the incident ion-to-Cu flux ratio. Using this technique, a systematic investigation on the effect of grain orientation on carrier mobility in Cu2O thin films is presented, which shows that the [100] Cu2O grain orientation is more favourable for realising a high carrier mobility. In the third and final outcome of this thesis, the temperature dependence of the drain current as a function of gate voltage along with the C-V characteristics reveals that minority carriers (electrons) cause the high off-state current in Cu2O TFTs. In addition, it is observed that an abrupt lowering of the activation energy and pinning of the Fermi energy occur in the off-state, which is attributed to subgap states at 0.38 eV below the conduction band minimum. These findings provide readers with the understanding of the main origins of the low carrier mobility and high off-state current in Cu2O TFTs, and the future research direction for resolving these problems.

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Hein, Moritz. "Organic Thin-Film Transistors". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-167894.

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Organic thin ﬁlm transistors (OTFT) are a key active devices of future organic electronic circuits. The biggest advantages of organic electronics are the potential for cheep production and the enabling of new applications for light, bendable or transparent devices. These beneﬁts are offered by a wide spectrum of various molecules and polymers that are optimized for different purpose. In this work, several interesting organic semiconductors are compared as well as transistor geometries and processing steps. In a cooperation with an industrial partner, test series of transistors are produced that are intensively characterized and used as a basis for later device simulation. Therefore, among others 4-point-probe measurements are used for a potential mapping of the transistor channel and via transfer line method the contact resistance is measured in a temperature range between 173 and 353 K. From later comparison with the simulation models, it appears that the geometrical resistance is actually more important for the transistor performance than the resistance of charge-carrier injection at the electrodes. The charge-carrier mobility is detailed evaluated and discussed. Within the observed temperature range a Arrhenius-like thermal activation of the charge- carrier transport is determined with an activation energy of 170 meV. Furthermore, a dependence of the electric ﬁeld-strength of a Poole-Frenkel type is found with a Poole-Frenkel factor of about 4.9 × 10E−4 (V/m) −0.5 that is especially important for transistors with small channel length. With these two considerations, already a good agreement between device simulation and measurement data is reached. In a detailed discussion of the dependence on the charge-carrier density and from comparison with established the charge-carrier mobility models, an exponential density of states could be estimated for the organic semiconductor. However, reliability of OTFTs remains one of the most challenging hurdles to be understood and resolved for broad commercial applications. In particular, bias-stress is identiﬁed as the key instability under operation for numerous OTFT devices and interfaces. In this work, a novel approach is presented that allows controlling and signiﬁcantly alleviating the bias-stress eﬀect by using molecular doping at low concentrations. For pentacene as semiconductor and SiO2 as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias-stress is explained in terms of the shift of Fermi level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. For transistors prepared in cooperation with the industrial partner, a second effect is observed that can be explained by a model considering a ferroelectric process in the dielectric and counteracts the bias-stress behavior.

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Hu, Jingping. "Electronic Thin Film Materials". Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491618.

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This thesis is concerned with investigations of the features of two types of electronic thin film materials: chemical vapour deposition (CVD) diamond and copper oxide based materials. CVD Diamond possesses excellent electrochemical properties. This thesis was concerned with investigating the fabrication and electrochemical properties of certain such diamond electrodes. The fabrication of diamond Ultramicroelectrodes (UMEs) was explored by coating tungsten needles with CVD diamond film under optimised. conditions, followed by selective insulation with different media. It was found that small grain diamond made the best electrode; large grain diamond coatings suffered from electrolyte leakage whereas nanodiamond had poor electrochemical properties. A range of tip insulation methods were examined, with most defined tips being produced by insulation with electrophoretic paint, followed by milling using Focused Ion Beam (FIB) methods. The utility of the tips prepared in this way in the SECM was demonstrated by imaging in biological media. The use of electrical conductive diamond as optically transparent electrode (OTE) opens novel applications for spectroelectrochemical studies due to the superior properties of diamond. The HFCVD diamond growth on fused silica quartz, ITO and AZO substrates was explored. The diamond membrane/ ITO structure was proposed and fabricated, exhibiting the best combination of optical transparency and electrical conductivity. Finally the changes in electrode properties as the diamond varied from macrocrystalline to nanocrystalline morphologies were studied. The second material investigated is copper oxide, specifically, cuprite (CU20) and SrCu202, a ternary Cu(I) oxide with a direct bandgap that arouses widespread interest as a p-type TCO. Their electronic structure and the nature of the hole charge carriers are topics of major current interest. The valence band and conduction band of both materials were studied by XPS in Daresbury, and XAS and XES measurements in ALS. The spectra are in good agreement with the PDOS from B3LYP calculations, showing strong hybridisation between Cu 3d and 0 2p states. Resonant Inelastic X-ray Scattering (RIXS) due to interband excitation close to Cu L3 edge threshold was first observed, conforming selection rule .6.L=O. This is the first observation of RIXS in close shell compound (dIO ). The UPS spectra of SrCu202 were measured with synchrotron radiation, and the changes in intensities of spectral features with varying photon energy were used to distinguish the contribution of 0 2p and Cu 3d states. Spectra showed that states at top of valance band are of dominant Cu 3d character and there is strong hybridisation between 0 2p and Cu 3d states which accounts for the hole mobility.

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Zhu, Wen Wei. "Organic thin film transistors". Thesis, McGill University, 2003. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=19597.

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Organic thin film transistors (OTFTs) have been fabricated using four different semiconducting polymers: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), polyhedral oligomeric silsesquioxanes (POSS) poly (2-methoxy-5-(2'-ethyl-hexyloxy)-l,4-phenylene vinylene) (MEH-PPV-POSS), poly[N-(3-methylphenyl)-N,N-diphenylamine-4,4'-diyl] (poly-TPD), and polyhedral oligomeric silsesquioxanes (POSS) poly (N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD-POSS). These OTFTs were fabricated on heavily doped «-type silicon wafers with thermally grown silicon dioxide layer was used as gate insulator. Except for MEH-PPV, the OTFTs studied in this work are the first for the above organic semiconductor materials. From results of current-voltage measurements, it was observed that the present OTFTs showed I-V characteristics of typical /^-channel thin film transistors. Some of the fabricated OTFTs showed performance with relatively large field-effect mobilities (>10~4 cm2 V"1 s"1). The mobility of semiconducting polymer with polyhedral oligomeric silsesquioxanes (POSS) was at least one order of magnitude larger than that of parent polymer without the POSS. The largest mobility value was obtained on poly-TPD-POSS (4.34 x 10"4 cm2 V"1 s"1) in room atmosphere and at room temperature. Thermal annealing under different conditions was carried out on the polymers and the effects on carrier field-effect mobilities were examined. The thermal annealing can increase slightly the field-effect mobilities of the polymers without POSS. However, no significant effect was observed on the field-effect mobilities of the polymers with POSS.

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McCaughan, Adam Nykoruk. "Superconducting thin film nanoelectronics". Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/101576.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 163-171).
Superconducting devices have found application in a diverse set of fields due to their unique properties which cannot be reproduced in normal materials. Although many of these devices rely on the properties of bulk superconductors, superconducting devices based on thin films are finding increasing application, especially in the realms of sensing and amplification. With recent advances in electron-beam lithography, superconducting thin films can be patterned into geometries with feature sizes at or below the characteristic length scales of the superconducting state. By patterning 2D geometries with features smaller than these characteristic length scales, we were able to use nanoscale phenomena which occur in thin superconducting films to create superconducting devices which performed useful tasks such as sensor amplification, logical processing, and fluxoid state sensing. In this thesis, I describe the development, characterization, and application of three novel superconducting nanoelectronic devices: the nTron, the yTron, and the current-controlled nanoSQUID. These devices derive their functionality from the exploitation of nanoscale superconducting effects such as kinetic inductance, electrothermal suppression, and current-crowding. Patterning these devices from superconducting thin-films has allowed them to be integrated monolithically with each other and other thin-film superconducting devices such as the superconducting nanowire single-photon detector.
by Adam Nykoruk McCaughan.
Ph. D.

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Morasch, Kevin R. "Nanoindentation induced thin film fracture". Online access for everyone, 2005. http://www.dissertations.wsu.edu/Thesis/Spring2005/k%5Fmorasch%5F042605.pdf.

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Geddis, Demetris Lemarcus. "Single fiber bi-directional OE links using 3D stacked thin film emitters and detectors". Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180141/unrestricted/geddis%5Fdemetris%5Fl%5F200312%5Fphd.pdf.

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Roos, Andreas. "Growth and characterization of advanced layered thin film structures : Amorphous SmCo thin film alloys". Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-177674.

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This report describes the growth and characterization of thin amorphous samarium-cobalt alloy films. The samarium-cobalt alloy was grown by DC magnetron sputtering in the presence of an external magnetic field parallel to the thin film. The external magnetic field induces a uniaxial in-plane magnetic anisotropy in the samarium-cobalt alloy. The thin films were characterized with x-ray scattering, and the magnetic anisotropy was characterized with the magneto optic Kerr effect. The measurements showed a uniaxial in-plane magnetic anisotropy in the samarium-cobalt alloy films. It is not clear how amorphous the samples really are, but there are indications of crystalline and amorphous areas in the alloys.

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Książki na temat "Thin film"

1945-, Ciureanu Petru, i Middelhoek S, red. Thin film resistive sensors. Bristol: Institute of Physics Pub., 1992.

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H, Francombe Maurice, red. Frontiers of thin film technology. San Diego: Academic Press, 2001.

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H, Benkreira, i Royal Society of Chemistry (Great Britain). Process Technology Group., red. Thin film coating. Cambridge: Royal Society of Chemistry, 1993.

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Yue, Kuo, red. Thin film transistors: Materials and processes. Boston: Kluwer Academic Publishers, 2004.

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H, Lettington Alan, Steeds J. W i Royal Society (Great Britain), red. Thin film diamond. London: Published by Chapman & Hall for the Royal Society, 1994.

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Yu-ming, Wang, red. An introduction to physics and technology of thin films. Singapore: World Scientific, 1994.

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Donglu, Shi, red. Functional thin films and functional materials: New concepts and technologies. Berlin: Springer, 2003.

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Elshabini-Riad, Aicha A. R. Thin film technology handbook. New York: McGraw-Hill, 1998.

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Kuo, Yue, red. Thin Film Transistors. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2.

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Lettington, Alan H., i J. W. Steeds, red. Thin Film Diamond. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9.

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Części książek na temat "Thin film"

Weik, Martin H. "thin film". W Computer Science and Communications Dictionary, 1777. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_19518.

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Scott, J. F., C. A. Araujo i L. D. McMillan. "Ferroelectric Thin Films and Thin Film Devices". W Ferroelectric Ceramics, 185–211. Basel: Birkhäuser Basel, 1993. http://dx.doi.org/10.1007/978-3-0348-7551-6_7.

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Lakhtakia, Akhlesh, i Joseph B. Geddes. "Thin-Film Metamaterials Called Sculptured Thin Films". W Engineering Materials, 59–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-12070-1_3.

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Ivanov, I. B., i D. S. Dimitrov. "Thin Film Drainage". W Thin Liquid Films, 379–496. New York: Routledge, 2023. http://dx.doi.org/10.1201/9780203735732-7.

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Braginski, A. I. "Thin Film Structures". W The New Superconducting Electronics, 89–122. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1918-4_4.

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Ceylan Koydemir, Hatice, Haluk Külah i Canan Özgen. "Thin Film Biosensors". W Thin Films and Coatings in Biology, 265–300. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-94-007-2592-8_8.

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Tummala, Rao, Weiping Li, Ted Tessier i Tom Wassick. "Thin-Film Packaging". W Microelectronics Packaging Handbook, 624–813. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-6037-1_6.

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Bartolf, Holger. "Thin-Film Structuring". W Fluctuation Mechanisms in Superconductors, 43–112. Wiesbaden: Springer Fachmedien Wiesbaden, 2015. http://dx.doi.org/10.1007/978-3-658-12246-1_5.

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Visser, Robert Jan, Lorenza Moro, Xi Chu, Jerry R. Chen, Peter van de Weijer, Hylke B. Akkerman, Samuel Graham, Mikko Söderlund, Alberto Perrotta i Maria Adriana Creatore. "Thin Film Encapsulation". W Handbook of Organic Light-Emitting Diodes, 1–51. Tokyo: Springer Japan, 2018. http://dx.doi.org/10.1007/978-4-431-55761-6_26-1.

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Luo, Jianbin. "Thin Film Lubrication". W Encyclopedia of Tribology, 3663–67. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_682.

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Streszczenia konferencji na temat "Thin film"

Chapela, V. M., J. Percino, V. N. Serkin i T. L. Belyaeva. "Soliton attractors in polymer film waveguides". W Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sae4.

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Schroeder, Raoul, i Bruno Ullrich. "Optoelectronic properties of thin film organic/inorganic hybrid devices". W Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.omb6.

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Hieu, Ta Chi, Satoshi Tanaka, Akira Watanabe, Seiichiro Hayakawa i Heihachi Sato. "Organic thin-film dye laser using UV-cured polymer". W Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.owd3.

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Mao, Shuzheng, i Jianzheng Xi. "Thin film beamsplitters". W Thin Film Physics and Applications: Second International Conference, redaktorzy Shixun Zhou, Yongling Wang, Yi-Xin Chen i Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190749.

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Yang, Ke, Jayant Kumar, Sukant Tripathy i Lowell Woohong Kim. "Determining the firth order nonlinear optical susceptibility of a polydiacetylene film". W Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sad7.

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Glaeske, Holger, Karl-Heinz Feller i Victor Malyshev. "Bistable optical transmittivity in an ultrathin film of oriented molecular aggregates". W Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sae11.

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Badano, Aldo, i Jerzy Kanicki. "Monte carlo modeling method for light transport in organic thin film light-emitting devices". W Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sud2.

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Yang, Ke, Jayant Kumar, Woohong Kim i Sukant Tripathy. "Dispersion of the fifth-order nonlinear optical susceptibility 113333 (5) (;,0,0,0,0) of a polydiacetylene film". W Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.omc5.

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV i REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES". W Proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02). WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812796912_0013.

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He, Jintian, Da-jun Liu, Xiaoping Wang, Binglin Zhang, Jianen Wang i Shu-po Shen. "Diamond thin film deposition on amorphous diamond film surface". W Thin Film Physics and Applications: Second International Conference, redaktorzy Shixun Zhou, Yongling Wang, Yi-Xin Chen i Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190720.

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Raporty organizacyjne na temat "Thin film"

Bernard, J. E., G. Negley, S. Sarwate, C. B. Cooper i F. E. Williams. Thin-Film Electroluminescence. Fort Belvoir, VA: Defense Technical Information Center, lipiec 1985. http://dx.doi.org/10.21236/ada158352.

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Shmulovich, J. Thin Film Phosphor Development. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1989. http://dx.doi.org/10.21236/ada272921.

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Elsass, Chris. Thin-Film Phase Shifters. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 2003. http://dx.doi.org/10.21236/ada422587.

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Graff, G. L., A. A. Campbell i N. R. Gordon. Biomimetic thin film synthesis. Office of Scientific and Technical Information (OSTI), maj 1995. http://dx.doi.org/10.2172/105133.

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BOYLE, TIMOTHY J., DAVID INGERSOLL, RANDALL T. CYGAN, MARK A. RODRIGUEZ, KAMYAR RAHIMIAN i JAMES A. VOIGT. All-Ceramic Thin Film Battery. Office of Scientific and Technical Information (OSTI), listopad 2002. http://dx.doi.org/10.2172/805862.

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Shannon, Robert R. Center for Thin Film Studies. Fort Belvoir, VA: Defense Technical Information Center, październik 1988. http://dx.doi.org/10.21236/ada202742.

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Dudney, N. J., J. B. Bates i D. Lubben. Thin-film rechargeable lithium batteries. Office of Scientific and Technical Information (OSTI), czerwiec 1995. http://dx.doi.org/10.2172/102151.

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McNeil. Thin Film Research Diagnostics Instrumentation. Fort Belvoir, VA: Defense Technical Information Center, październik 1987. http://dx.doi.org/10.21236/ada191240.

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Belzer, Barbara J., i David L. Blackburn. Thin film reference materials development. Gaithersburg, MD: National Institute of Standards and Technology, 1998. http://dx.doi.org/10.6028/nist.sp.400-100.

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Rosenblum, B. Z. Thin film superconductors. Final report. Office of Scientific and Technical Information (OSTI), sierpień 1994. http://dx.doi.org/10.2172/10181322.

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