Gotowa bibliografia na temat „Thick Copper level”
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Artykuły w czasopismach na temat "Thick Copper level"
Li, Yi Nan, Z. L. Peng i J. C. Yan. "GTA Welding of Copper Thick Plates by Using ERCuTi Welding Materials". Materials Science Forum 697-698 (wrzesień 2011): 409–13. http://dx.doi.org/10.4028/www.scientific.net/msf.697-698.409.
Pełny tekst źródłaHosseini, Vahid A., Kristina Lindgren, Mattias Thuvander, Daniel Gonzalez, James Oliver i Leif Karlsson. "Nanoscale phase separations in as-fabricated thick super duplex stainless steels". Journal of Materials Science 56, nr 21 (19.04.2021): 12475–85. http://dx.doi.org/10.1007/s10853-021-06056-0.
Pełny tekst źródłaLoquet, Yannick, Cedric Perrot, Pierre Bouillon i Blaise Iteprat. "Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology". ECS Transactions 3, nr 41 (21.12.2019): 1–8. http://dx.doi.org/10.1149/1.2819476.
Pełny tekst źródłaRichard, Claire Therese, M. M. Frank, Pascal Besson, E. Serret, N. Hotellier, Alessio Beverina, L. Dumas, Lucile Broussous, F. Kovacs i Thierry Billon. "Barrier and Copper Seedlayer Wet Etching". Solid State Phenomena 103-104 (kwiecień 2005): 361–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.103-104.361.
Pełny tekst źródłaLee, Suhyun, Chien Wern i Sung Yi. "Novel Fabrication of Silver-Coated Copper Nanowires with Organic Compound Solution". Materials 15, nr 3 (1.02.2022): 1135. http://dx.doi.org/10.3390/ma15031135.
Pełny tekst źródłaAoh, Jong Ning, Chih Wei Huang i Wei Ju Cheng. "Fabrication of Al6061-AMC by Adding Copper-Coated SiC Reinforcement by Friction Stir Processing (FSP)". Materials Science Forum 783-786 (maj 2014): 1721–28. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.1721.
Pełny tekst źródłaGorbatyuk, S. M., A. A. Gerasimova i N. N. Belkina. "Applying Thermal Coatings to Narrow Walls of the Continuous-Casting Molds". Materials Science Forum 870 (wrzesień 2016): 564–67. http://dx.doi.org/10.4028/www.scientific.net/msf.870.564.
Pełny tekst źródłaMantatova, N. V., Chuluunbatyn Oyuuntsetseg i S. Ye Sanzhiyeva. "TRACE ELEMENT CONTENT IN BLOOD OF CATTLE WITH ALIMENTARY ANEMIA AND HYPOCUPROSIS, AND IN SOIL SAMPLES OF THE TÖV AIMAG OF MONGOLIAAND THE KYAKHTINSKY DISTRICT OF THE REPUBLIC OF BURYATIA". Vestnik Altajskogo gosudarstvennogo agrarnogo universiteta, nr 8 (2021): 61–66. http://dx.doi.org/10.53083/1996-4277-2021-202-08-61-66.
Pełny tekst źródłaPrem Kumar, T., V. Muthupriya, A. Antony Christian Rajaa, R. Sasirekab i R. Sumanc. "World Best Level Efficiency from An Engineered Novel SLG/Mo/p-Cu2ZnSn(Al)Se4/n-CdS/i-ZnO/Al:ZnO/Al Compound Semiconductor Hetero-Junction Thin Film Solar Cells". Shanlax International Journal of Arts, Science and Humanities 9, S1-May (14.05.2022): 41–46. http://dx.doi.org/10.34293/sijash.v9is1-may.5942.
Pełny tekst źródłaSchmidt, Ralf, Jens Palm i Jan M. Knaup. "The Pivotal Role of Uniformity of Electrolytic Deposition Processes to Improve the Reliability of Advanced Packaging". International Symposium on Microelectronics 2021, nr 1 (1.10.2021): 000142–48. http://dx.doi.org/10.4071/1085-8024-2021.1.000142.
Pełny tekst źródłaRozprawy doktorskie na temat "Thick Copper level"
Pastore, Carine. "Evaluation de back-end of line optimisés pour les inductances intégrées en technologies CMOS et BiCMOS avancées visant les applications radiofréquences". Phd thesis, Grenoble 1, 2009. http://www.theses.fr/2009GRE10081.
Pełny tekst źródłaIntegrated in BEOL metallizations of CMOS or BiCMOS technologies, inductors have to meet requirements in terms of high electrical performances, low area and/or high current capability. However, this challenge is tricky to address. Actually, BEOL evolution and silicon substrate losses in Advanced CMOS technologies greatly decrease inductors' performances. Thus, the evaluation of optimized BEOL dedicated to the integration of inductors is essential if we want to target RF applications' specifications. The main objective of this thesis is to provide optimized technological solutions for inductors integrated in silicon technologies, and targeting RF applications in the 1 - 5 GHz frequency range. A dummy fill strategy has been evaluated at the scale of the device (without impacting its electrical performances) in order to fulfil metal density required in advanced technologies (down to the 32 nm node). Then, we have focused our attention on the evaluation of an optimized BEOL using a Double Thick Copper module in a 65 nm CMOS bulk technology. Actually, the wish to integrate the module dedicated to the power amplifier in CMOS technology has raised high current issues (up to 1 A @ 125°C), which is impossible to target with a standard BEOL. In the same trend, this optimized BEOL has been evaluated in SOI technology. Actually, this technology is starting to come up for the complete integration of the RF Front End module in CMOS technology thanks to its compatibility with HR silicon substrates which enables to integrate even more functions (antennas, diplexer, balun). Thus, inductor's optimization using a Double Thick Copper module has been performed in a 130 nm HR SOI CMOS technology
Części książek na temat "Thick Copper level"
DeNapoli, Antoinette. "In Search of the Sadhu’s Stone: Metals and Gems as Theraputic Technologies of Transformation in Vernacular Aesceticism in North India". W Soulless Matter, Seats of Energy: Metals, Gems and Minerals in South Asian Traditions, 143–73. Equinox Publishing, 2016. http://dx.doi.org/10.1558/equinox.29656.
Pełny tekst źródłaDelponte, Ilaria, i Valentina Costa. "Metropolitan MaaS and DRT Schemes: Are They Paving the Way Towards a More Inclusive and Resilient Urban Environment?" W Studies in Health Technology and Informatics. IOS Press, 2022. http://dx.doi.org/10.3233/shti220853.
Pełny tekst źródła"Some of these could also be operated in the energy range above lOMeV for experiments designed to determine at which energy level radioactivity can be induced in the irradiated medium. A linac with a maximum energy of 25 MeV was commissioned for the U.S. Army Natick Research and Development Labora tories in 1963. Its beam power was 6.5 kW at an electron energy of 10 MeV, 18 kW at 24 MeV. Assuming 100% efficiency, a 1-kW beam can irradiate 360 kg of product with a dose of 10 kGy/h. The efficiency of electron accelerators is higher than that of gamma sources because the electron beam can be directed at the product, whereas the gamma sources emit radiation in all directions. An efficiency of 50% is a realistic assumption for accelerator facilities. With that and 6.5 kW beam power an accelerator of the type built for the Natick laboratories can process about 1.2t/h at 10 kGy. In Odessa in the former Soviet Union, now in the Ukraine, two 20-kW accelerators with an energy of 1.4 MeV installed next to a grain elevator went into operation in 1983. Each accelerator has the capacity to irradiate 200 t of wheat per hour with a dose of 200 Gy for insect disinfestation. This corresponds to a beam utilization of 56% (9). In France, a facility for electron irradiation of frozen deboned chicken meat commenced operation at Berric near Vannes (Brittany) in late 1986. The purpose of irradiation is to improve the hygienic quality of the meat by destroying salmonella and other disease-causing (pathogenic) microorganisms. The electron beam accelerator is a 7 MeV/10 kW Cassitron built by CGR-MeV (10). An irradiation facility of this type is shown in Figure . Because of their relatively low depth of penetration electron beams cannot be used for the irradiation of animal carcasses, large packages, or other thick materials. However, this difficulty can be overcome by converting the electrons to x-rays. As indicated in Figure 9, this can be done by fitting a water-cooled metal plate to the scanner. Whereas in conventional x-ray tubes the conversion of electron energy to x-ray energy occurs only with an efficiency of about %, much higher efficiencies can be achieved in electron accelerators. The conversion efficiency depends on the material of the converter plate (target) and on the electron energy. Copper converts 5-MeV electrons with about 7% efficiency, 10-MeV electrons with 12% efficiency. A tungsten target can convert 5-MeV electrons with about 20%, 10-MeV electrons with 30% efficiency. (Exact values depend on target thickness.) In contrast to the distinct gamma radiation energy emitted from radionuclides and to the monoenergetic electrons produced by accelerators, the energy spectrum of x-rays is continuous from the value equivalent to the energy of the bombarding electrons to zero. The intensity of this spectrum peaks at about one-tenth of the maximum energy value. The exact location of the intensity peak depends on the thickness of the converter plate and on some other factors. As indicated in Figure". W Safety of Irradiated Foods, 40. CRC Press, 1995. http://dx.doi.org/10.1201/9781482273168-31.
Pełny tekst źródłaStreszczenia konferencji na temat "Thick Copper level"
Andrews, Richard E. "Canister Sealing for High Level Waste Encapsulation". W ASME 2001 8th International Conference on Radioactive Waste Management and Environmental Remediation. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/icem2001-1319.
Pełny tekst źródłaVerdy, C., G. Montavon i C. Coddet. "On the Behavior of Thick and Porous Copper Deposits Under Compressive Stress". W ITSC 1998, redaktor Christian Coddet. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.itsc1998p0647.
Pełny tekst źródłaSchober, Jakob, Johannes Berger, Constanze Eulenkamp, Karl Nicolaus i Gregor Feiertag. "Thick Film Photoresist Process for Copper Pillar Bumps on Surface Acoustic Wave - Wafer Level Packages". W 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC). IEEE, 2020. http://dx.doi.org/10.1109/estc48849.2020.9229720.
Pełny tekst źródłaNguyen, Dat, Bob Davis i Corey Lewis. "Copper Bond Over Active Circuit (BOAC) and Copper Over Anything (COA) Failure Analysis". W ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0076.
Pełny tekst źródłaHlina, Jiri, Karel Hromadka, Jan Reboun, Martin Hirman i Ales Hamacek. "Adhesion improvement of Thick Printed Copper film on alumina substrates by controlling of oxygen level in furnace". W 2016 39th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2016. http://dx.doi.org/10.1109/isse.2016.7563154.
Pełny tekst źródłaKang, Tae Goo, i Young-Ho Cho. "Near-Field Electromagnetic Shielding Effect of On-Chip Electroplated Copper Layers". W ASME 1999 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1999. http://dx.doi.org/10.1115/imece1999-0318.
Pełny tekst źródłaMotta, Lorenzo, Paolo Veneto, Mark Antolik i Donato Di Donato. "Focused Ion Beam Circuit Edit on Copper Redistribution Layer". W ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0440.
Pełny tekst źródłaKuo Frank, Kuei Hsiao, Ting-en Lin, Joey Lin, Yu Sheng Lin, Stan Chen i Feng Lung Chien. "The Comparative Study of High and Low Temperature Cure Polyimide For Wafer Level Package With Ultra-Thick Re-distribution Copper Layer". W 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). IEEE, 2021. http://dx.doi.org/10.1109/ectc32696.2021.00158.
Pełny tekst źródłaThadesar, Paragkumar A., i Muhannad S. Bakir. "Silicon Interposer Featuring Novel Electrical and Optical TSVs". W ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-89742.
Pełny tekst źródłaBostanci, Huseyin, i Nihal E. Joshua. "Nucleate Boiling of Dielectric Liquids on Hydrophobic and Hydrophilic Surfaces". W ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-53604.
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