Artykuły w czasopismach na temat „Thermally assisted switching”
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Strukov, Dmitri B., i R. Stanley Williams. "Intrinsic constrains on thermally-assisted memristive switching". Applied Physics A 102, nr 4 (26.01.2011): 851–55. http://dx.doi.org/10.1007/s00339-011-6269-4.
Pełny tekst źródłaTaniguchi, Tomohiro, i Hiroshi Imamura. "Spin torque assisted magnetization switching in thermally activated region". Journal of the Korean Physical Society 62, nr 12 (czerwiec 2013): 1773–77. http://dx.doi.org/10.3938/jkps.62.1773.
Pełny tekst źródłaIskandarova, I. M., A. V. Ivanov, A. A. Knizhnik, A. F. Popkov, B. V. Potapkin, P. N. Skirdkov, K. A. Zvezdin, Q. Stainer, L. Lombard i K. Mackay. "Simulation of switching maps for thermally assisted MRAM nanodevices". Nanotechnologies in Russia 11, nr 3-4 (marzec 2016): 208–14. http://dx.doi.org/10.1134/s1995078016020063.
Pełny tekst źródłaGuillemenet, Y., L. Torres, G. Sassatelli i N. Bruchon. "On the Use of Magnetic RAMs in Field-Programmable Gate Arrays". International Journal of Reconfigurable Computing 2008 (2008): 1–9. http://dx.doi.org/10.1155/2008/723950.
Pełny tekst źródłaPrejbeanu, Ioan Lucian, Sebastien Bandiera, Ricardo Sousa i Bernard Dieny. "MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability". Advances in Science and Technology 95 (październik 2014): 126–35. http://dx.doi.org/10.4028/www.scientific.net/ast.95.126.
Pełny tekst źródłaEl Baraji, M., V. Javerliac, W. Guo, G. Prenat i B. Dieny. "Dynamic compact model of thermally assisted switching magnetic tunnel junctions". Journal of Applied Physics 106, nr 12 (15.12.2009): 123906. http://dx.doi.org/10.1063/1.3259373.
Pełny tekst źródłaAkagi, F., T. Matsumoto i K. Nakamura. "Effect of switching field gradient for thermally assisted magnetic recording". Journal of Applied Physics 101, nr 9 (maj 2007): 09H501. http://dx.doi.org/10.1063/1.2710546.
Pełny tekst źródłaKhalili Amiri, P., P. Upadhyaya, J. G. Alzate i K. L. Wang. "Electric-field-induced thermally assisted switching of monodomain magnetic bits". Journal of Applied Physics 113, nr 1 (7.01.2013): 013912. http://dx.doi.org/10.1063/1.4773342.
Pełny tekst źródłaPrejbeanu, I. L., W. Kula, K. Ounadjela, R. C. Sousa, O. Redon, B. Dieny i J. P. Nozieres. "Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions". IEEE Transactions on Magnetics 40, nr 4 (lipiec 2004): 2625–27. http://dx.doi.org/10.1109/tmag.2004.830395.
Pełny tekst źródłaAzevedo, Joao, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri-Sanial, Jeremy Alvarez-Herault i Ken Mackay. "A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, nr 11 (listopad 2014): 2326–35. http://dx.doi.org/10.1109/tvlsi.2013.2294080.
Pełny tekst źródłaRalph, D. C., Y. T. Cui, L. Q. Liu, T. Moriyama, C. Wang i R. A. Buhrman. "Spin-transfer torque in nanoscale magnetic devices". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, nr 1951 (28.09.2011): 3617–30. http://dx.doi.org/10.1098/rsta.2011.0169.
Pełny tekst źródłaTaniguchi, Tomohiro, i Hiroshi Imamura. "Minimization of the Switching Time of a Synthetic Free Layer in Thermally Assisted Spin Torque Switching". Applied Physics Express 4, nr 10 (20.09.2011): 103001. http://dx.doi.org/10.1143/apex.4.103001.
Pełny tekst źródłaRen, Yi, Tianle Zhou, Chun Jiang i Bin Tang. "Thermally switching between perfect absorber and asymmetric transmission in vanadium dioxide-assisted metamaterials". Optics Express 29, nr 5 (25.02.2021): 7666. http://dx.doi.org/10.1364/oe.418273.
Pełny tekst źródłaYoshikawa, D., Y. Fujisawa, T. Kato, S. Iwata i S. Tsunashima. "Thermally Assisted Magnetization Switching on Magnetic Tunnel Junctions With Perpendicularly Magnetized TbFe Layer". Journal of the Magnetics Society of Japan 38, nr 3-2 (2014): 123–26. http://dx.doi.org/10.3379/msjmag.1403r003.
Pełny tekst źródłaLe Gallo, Manuel, Aravinthan Athmanathan, Daniel Krebs i Abu Sebastian. "Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells". Journal of Applied Physics 119, nr 2 (14.01.2016): 025704. http://dx.doi.org/10.1063/1.4938532.
Pełny tekst źródłaSiddik, Manzar, Seungjae Jung, Jubong Park, Wootae Lee, Seonghyun Kim, Joonmyoung Lee, Jungho Shin i in. "Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications". Applied Physics Letters 99, nr 6 (8.08.2011): 063501. http://dx.doi.org/10.1063/1.3622656.
Pełny tekst źródłaHassdenteufel, Alexander, Birgit Hebler, Christian Schubert, Andreas Liebig, Martin Teich, Manfred Helm, Martin Aeschlimann, Manfred Albrecht i Rudolf Bratschitsch. "Thermally Assisted All-Optical Helicity Dependent Magnetic Switching in Amorphous Fe100-xTbxAlloy Films". Advanced Materials 25, nr 22 (25.04.2013): 3122–28. http://dx.doi.org/10.1002/adma.201300176.
Pełny tekst źródłaZheng, Yuankai, Yihong Wu, Kebin Li, Jinjun Qiu, Guchang Han, Zaibing Guo, Ping Luo i in. "Magnetic Random Access Memory (MRAM)". Journal of Nanoscience and Nanotechnology 7, nr 1 (1.01.2007): 117–37. http://dx.doi.org/10.1166/jnn.2007.18010.
Pełny tekst źródłaCebollada, F., J. M. González, J. De Frutos i A. M. González. "Mecanismos de inversión de la magnetización e interacciones en sistemas magnéticos: campo coercitivo versus campo de conmutación y desimanación térmicamente asistida". Boletín de la Sociedad Española de Cerámica y Vidrio 44, nr 3 (30.06.2005): 169–76. http://dx.doi.org/10.3989/cyv.2005.v44.i3.385.
Pełny tekst źródłaChavent, Antoine, Jeremy Alvarez-Herault, Celine Portemont, Claire Creuzet, Jeremy Pereira, Julien Vidal, Ken Mackay, Ricardo C. Sousa, Ioan L. Prejbeanu i Bernard Dieny. "Effects of the Heating Current Polarity on the Writing of Thermally Assisted Switching-MRAM". IEEE Transactions on Magnetics 50, nr 11 (listopad 2014): 1–4. http://dx.doi.org/10.1109/tmag.2014.2322494.
Pełny tekst źródłaPapusoi, C., Y. Conraux, I. L. Prejbeanu, R. Sousa i B. Dieny. "Switching field dependence on heating pulse duration in thermally assisted magnetic random access memories". Journal of Magnetism and Magnetic Materials 321, nr 16 (sierpień 2009): 2467–71. http://dx.doi.org/10.1016/j.jmmm.2009.03.050.
Pełny tekst źródłaHérault, J., R. C. Sousa, C. Ducruet, B. Dieny, Y. Conraux, C. Portemont, K. Mackay i in. "Nanosecond magnetic switching of ferromagnet-antiferromagnet bilayers in thermally assisted magnetic random access memory". Journal of Applied Physics 106, nr 1 (lipiec 2009): 014505. http://dx.doi.org/10.1063/1.3158231.
Pełny tekst źródłaTang, Ke, HongJie Yang, LinHong Cao, HongTao Yu, JinSong Liu i JunXia Wang. "Thermally assisted switching in FePt single-domain particles with a Gaussian distribution of temperature". Science China Physics, Mechanics and Astronomy 54, nr 7 (28.05.2011): 1263–66. http://dx.doi.org/10.1007/s11433-011-4353-6.
Pełny tekst źródłaLi, Zhen, Liesbet Lagae, Gustaaf Borghs, Robert Mertens i Willem Van Roy. "Fast thermally assisted switching at low current density in (Ga,Mn)As magnetic tunnel junctions". Applied Physics Letters 96, nr 5 (luty 2010): 052513. http://dx.doi.org/10.1063/1.3302465.
Pełny tekst źródłaBandiera, S., R. C. Sousa, M. Marins de Castro, C. Ducruet, C. Portemont, S. Auffret, L. Vila, I. L. Prejbeanu, B. Rodmacq i B. Dieny. "Spin transfer torque switching assisted by thermally induced anisotropy reorientation in perpendicular magnetic tunnel junctions". Applied Physics Letters 99, nr 20 (14.11.2011): 202507. http://dx.doi.org/10.1063/1.3662971.
Pełny tekst źródłaDeschenes, Austin, Sadid Muneer, Mustafa Akbulut, Ali Gokirmak i Helena Silva. "Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory". Beilstein Journal of Nanotechnology 7 (11.11.2016): 1676–83. http://dx.doi.org/10.3762/bjnano.7.160.
Pełny tekst źródłaChen, Yu-Ting, Ting-Chang Chang, Po-Chun Yang, Jheng-Jie Huang, Hsueh-Chih Tseng, Hui-Chun Huang, Jyun-Bao Yang i in. "Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure". IEEE Electron Device Letters 34, nr 2 (luty 2013): 226–28. http://dx.doi.org/10.1109/led.2012.2232276.
Pełny tekst źródłaDai, Bing, Takeshi Kato, Satoshi Iwata i Shigeru Tsunashima. "Spin Transfer Torque Switching of Amorphous GdFeCo With Perpendicular Magnetic Anisotropy for Thermally Assisted Magnetic Memories". IEEE Transactions on Magnetics 48, nr 11 (listopad 2012): 3223–26. http://dx.doi.org/10.1109/tmag.2012.2196988.
Pełny tekst źródłaLiu, Weikang, Bin Cheng, Shaoqing Ren, Wei Huang, Jihao Xie, Guangjun Zhou, Hongwei Qin i Jifan Hu. "Thermally assisted magnetization control and switching of Dy3Fe5O12 and Tb3Fe5O12 ferrimagnetic garnet by low density current". Journal of Magnetism and Magnetic Materials 507 (sierpień 2020): 166804. http://dx.doi.org/10.1016/j.jmmm.2020.166804.
Pełny tekst źródłaBi, Chong, Lin Huang, Shibing Long, Qi Liu, Zhihong Yao, Ling Li, Zongliang Huo, Liqing Pan i Ming Liu. "Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current". Applied Physics Letters 105, nr 2 (14.07.2014): 022407. http://dx.doi.org/10.1063/1.4890539.
Pełny tekst źródłaDai, Bing, Yong Guo, Jiaqi Zhu, Takeshi Kato, Satoshi Iwata, Shigeru Tsunashima, Lei Yang i Jiecai Han. "Spin transfer torque switching in exchange-coupled amorphous GdFeCo/TbFe bilayers for thermally assisted MRAM application". Journal of Physics D: Applied Physics 50, nr 13 (2.03.2017): 135005. http://dx.doi.org/10.1088/1361-6463/aa5bca.
Pełny tekst źródłaKim, Taewook, Tobias Vogel, Eszter Piros, Déspina Nasiou, Nico Kaiser, Philipp Schreyer, Robert Winkler i in. "Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices". Applied Physics Letters 122, nr 2 (9.01.2023): 023502. http://dx.doi.org/10.1063/5.0124781.
Pełny tekst źródłaWibowo, Nur A., Cahya Handoyo i Leopoldus R. Sasongko. "Thermally Activated Magnetic Switching Mode for Various Thicknesses of Perpendicularly Ferromagnetic Nano-dot". Nanoscience &Nanotechnology-Asia 9, nr 2 (25.06.2019): 259–66. http://dx.doi.org/10.2174/2210681208666180507101809.
Pełny tekst źródłaDai, Bing, Takeshi Kato, Satoshi Iwata i Shigeru Tsunashima. "Temperature Dependence of Critical Current Density of Spin Transfer Torque Switching Amorphous GdFeCo for Thermally Assisted MRAM". IEEE Transactions on Magnetics 49, nr 7 (lipiec 2013): 4359–62. http://dx.doi.org/10.1109/tmag.2013.2240380.
Pełny tekst źródłaTomita, H., S. Miwa, T. Nozaki, S. Yamashita, T. Nagase, K. Nishiyama, E. Kitagawa i in. "Unified understanding of both thermally assisted and precessional spin-transfer switching in perpendicularly magnetized giant magnetoresistive nanopillars". Applied Physics Letters 102, nr 4 (28.01.2013): 042409. http://dx.doi.org/10.1063/1.4789879.
Pełny tekst źródłaGuillemenet, Y., G. Sassatelli i L. Torres. "Non-volatile run-time field-programmable gate arrays structures using thermally assisted switching magnetic random access memories". IET Computers & Digital Techniques 4, nr 3 (1.05.2010): 211–26. http://dx.doi.org/10.1049/iet-cdt.2009.0019.
Pełny tekst źródłaDai, B., J. Zhu, K. Liu, L. Yang i J. Han. "The dependence of critical current density of GdFeCo layer on composition of thermally assisted STT-RAM". International Journal of Modern Physics B 31, nr 16-19 (26.07.2017): 1744075. http://dx.doi.org/10.1142/s0217979217440751.
Pełny tekst źródłaYaulema, Jorge, Jose Bon, M. Carmen Gómez-Collado, Juan José Pérez, Enrique Berjano i Macarena Trujillo. "Switching Monopolar Mode for RF-Assisted Resection and Superficial Ablation of Biological Tissue: Computational Modeling and Ex Vivo Experiments". Processes 8, nr 12 (16.12.2020): 1660. http://dx.doi.org/10.3390/pr8121660.
Pełny tekst źródłaYoon, Jong-Gul. "A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films". Materials 13, nr 17 (20.08.2020): 3680. http://dx.doi.org/10.3390/ma13173680.
Pełny tekst źródłaGayen, Anabil, Barnali Biswas, Akhilesh Kumar Singh, Padmanapan Saravanan i Alagarsamy Perumal. "High Temperature Magnetic Properties of Indirect Exchange Spring FePt/M(Cu,C)/Fe Trilayer Thin Films". Journal of Nanomaterials 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/718365.
Pełny tekst źródłaPushp, Aakash, Timothy Phung, Charles Rettner, Brian P. Hughes, See-Hun Yang i Stuart S. P. Parkin. "Giant thermal spin-torque–assisted magnetic tunnel junction switching". Proceedings of the National Academy of Sciences 112, nr 21 (13.05.2015): 6585–90. http://dx.doi.org/10.1073/pnas.1507084112.
Pełny tekst źródłaZhang, Xiangping, Xingan Jiang, Jianming Deng, Xueyun Wang i Jiawang Hong. "Sunlight-assisted ferroelectric domain switching and ionic migration in Sn-based ferroelectric". Applied Physics Letters 121, nr 19 (7.11.2022): 192902. http://dx.doi.org/10.1063/5.0113665.
Pełny tekst źródłaMishra, Pinkesh Kumar, Meenakshi Sravani, M. V. V. Satya Narayana i Swapnil Bhuktare. "Acoustically assisted energy efficient field free spin orbit torque switching of out of plane nanomagnet". Journal of Applied Physics 133, nr 13 (7.04.2023): 133901. http://dx.doi.org/10.1063/5.0143459.
Pełny tekst źródłaAdhinarta, J. K., E. Jobiliong, M. Shiddiq, H. P. Uranus i E. Steven. "Light storage and thermal-assisted switching of SrAl2O4:Eu2+, Dy3+". Journal of Nonlinear Optical Physics & Materials 28, nr 04 (grudzień 2019): 1950042. http://dx.doi.org/10.1142/s0218863519500425.
Pełny tekst źródłaYang, Zichu, Yuanchang Zhong, Yu Chen i Dalin Li. "Mixed Variable Parameter Energy Storage-Assisted Frequency Support Strategy". Electronics 13, nr 8 (11.04.2024): 1450. http://dx.doi.org/10.3390/electronics13081450.
Pełny tekst źródłaTaniguchi, Tomohiro, i Hiroshi Imamura. "Theory of Spin Torque Assisted Thermal Switching of Single Free Layer". IEEE Transactions on Magnetics 48, nr 11 (listopad 2012): 3803–6. http://dx.doi.org/10.1109/tmag.2012.2196979.
Pełny tekst źródłaBarra, Felipe. "Efficiency Fluctuations in a Quantum Battery Charged by a Repeated Interaction Process". Entropy 24, nr 6 (13.06.2022): 820. http://dx.doi.org/10.3390/e24060820.
Pełny tekst źródłaLiu, Zengyuan, Pin-Wei Huang, Ganping Ju i R. H. Victora. "Thermal switching probability distribution of L10 FePt for heat assisted magnetic recording". Applied Physics Letters 110, nr 18 (maj 2017): 182405. http://dx.doi.org/10.1063/1.4983033.
Pełny tekst źródłaPanda, Debashis, i Paritosh Piyush Sahu. "Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory". Journal of Applied Physics 121, nr 20 (28.05.2017): 204504. http://dx.doi.org/10.1063/1.4984200.
Pełny tekst źródłaVishnuram, Pradeep, Sudhanshu Kumar, Vivek Kumar Singh, Thanikanti Sudhakar Babu, Ramani Kannan i Khairul Nisak Bt Md Hasan. "Phase Shift-Controlled Dual-Frequency Multi-Load Converter with Independent Power Control for Induction Cooking Applications". Sustainability 14, nr 16 (18.08.2022): 10278. http://dx.doi.org/10.3390/su141610278.
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