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Artykuły w czasopismach na temat "Terahertz electronics"
O, Kenneth. "Affordable terahertz electronics". IEEE Microwave Magazine 10, nr 3 (maj 2009): 113–16. http://dx.doi.org/10.1109/mmm.2009.932070.
Pełny tekst źródłaShur, Michael. "Terahertz Sensing Technology". International Journal of High Speed Electronics and Systems 24, nr 01n02 (marzec 2015): 1550001. http://dx.doi.org/10.1142/s0129156415500019.
Pełny tekst źródłaSong, Ho-Jin. "Packages for Terahertz Electronics". Proceedings of the IEEE 105, nr 6 (czerwiec 2017): 1121–38. http://dx.doi.org/10.1109/jproc.2016.2633547.
Pełny tekst źródłaShur, M. "Plasma wave terahertz electronics". Electronics Letters 46, nr 26 (2010): S18. http://dx.doi.org/10.1049/el.2010.8457.
Pełny tekst źródłaShur, Michael S., i Victor Ryzhii. "Plasma Wave Electronics". International Journal of High Speed Electronics and Systems 13, nr 02 (czerwiec 2003): 575–600. http://dx.doi.org/10.1142/s0129156403001831.
Pełny tekst źródłaHuang, Yi Hu, Man Hu, Gui Hua He i Wen Long Liu. "Terahertz Time-Domain Spectroscopy Technology and its Application in the Field of Pesticide". Key Engineering Materials 561 (lipiec 2013): 640–45. http://dx.doi.org/10.4028/www.scientific.net/kem.561.640.
Pełny tekst źródłaTamošiūnas, V. "New trends in terahertz electronics". Lithuanian Journal of Physics 46, nr 2 (2006): 131–45. http://dx.doi.org/10.3952/lithjphys.46217.
Pełny tekst źródłaNaftaly, Mira, Satyajit Das, John Gallop, Kewen Pan, Feras Alkhalil, Darshana Kariyapperuma, Sophie Constant, Catherine Ramsdale i Ling Hao. "Sheet Resistance Measurements of Conductive Thin Films: A Comparison of Techniques". Electronics 10, nr 8 (17.04.2021): 960. http://dx.doi.org/10.3390/electronics10080960.
Pełny tekst źródłaGONG, Yubin, Qing ZHOU, Hanwen TIAN, Jingchao TANG, Kaicheng WANG, Yaxin ZHANG, Bo ZHANG i Diwei LIU. "Terahertz radiation sources based on electronics". Journal of Shenzhen University Science and Engineering 36, nr 2 (2019): 111. http://dx.doi.org/10.3724/sp.j.1249.2019.02111.
Pełny tekst źródłaLi, Min, Zheng Liu, Yu Xia, Mingyang He, Kangwen Yang, Shuai Yuan, Ming Yan, Kun Huang i Heping Zeng. "Terahertz Time-of-Flight Ranging with Adaptive Clock Asynchronous Optical Sampling". Sensors 23, nr 2 (8.01.2023): 715. http://dx.doi.org/10.3390/s23020715.
Pełny tekst źródłaRozprawy doktorskie na temat "Terahertz electronics"
Lucyszyn, Stepan. "Millimetre-wave and terahertz electronics". Thesis, Imperial College London, 2009. http://hdl.handle.net/10044/1/6974.
Pełny tekst źródłaOthman, Mohd Azlishah. "Sub-Terahertz : generation and detection". Thesis, University of Nottingham, 2013. http://eprints.nottingham.ac.uk/13375/.
Pełny tekst źródłaShen, Hao. "Compressed sensing on terahertz imaging". Thesis, University of Liverpool, 2012. http://livrepository.liverpool.ac.uk/8457/.
Pełny tekst źródłaGlynn, David William. "Terahertz frequency doubling circuits for communications". Thesis, University of Birmingham, 2017. http://etheses.bham.ac.uk//id/eprint/7517/.
Pełny tekst źródłaSalmans, Parker Dean. "Semiconductor Terahertz Electronics and Novel High-Speed Single-Shot Measurements". BYU ScholarsArchive, 2017. https://scholarsarchive.byu.edu/etd/6544.
Pełny tekst źródłaEscorcia, Carranza Ivonne. "Metamaterial based CMOS terahertz focal plane array". Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6955/.
Pełny tekst źródłaKhiabani, Neda. "Modelling, design and characterisation of terahertz photoconductive antennas". Thesis, University of Liverpool, 2013. http://livrepository.liverpool.ac.uk/14213/.
Pełny tekst źródłaLedwosinska, Elzbieta. "Graphene as a mechanical or electrical transducer for far-infrared / terahertz detection". Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119378.
Pełny tekst źródłaNous tentons de remplir "le trou THz" pour les détecteurs hautes performance en utilisant les propriétés mécaniques du graphène dans une cellule miniature de Golay ainsi que les propriétés électriques du graphène hydrogéné dans un microbolomètre. La cellule de Golay est le détecteur le plus sensible de THz à température pièce sur le marché, mais requiert une miniaturisation comme première étape d'intégration à une grille d'imagerie. En ce moment, des membranes ultra minces pour des cellules de Golay miniatures souffrent de responsivité diminuée lorsque les dimensions latérales sont réduites. Nous proposons le graphène comme candidat idéal pour la membrane, car sa dureté élastique minimale grâce à sa nature monoatomique permet un agrandissement jusqu'à l'échelle microscopique. Nous simulons la déflection de la membrane en fonction de la température et analysons la géométrie de cellule optimale avec une sensibilité prédite de tripler par rapport à la technologie actuelle qui est quatre fois plus grande. Afin de fabriquer cette cellule, nous avons développé la première méthode de transfert de graphène suspendu sans organiques sur une échelle de 10 − 20 μm. La microscopie Raman, Auger, à balayage électronique et à transmission électronique (TEM) confirment du graphène de haute qualité sans aucune contamination à part celle de l'air ambiant. Cette méthode s'applique non seulement pour construire la cellule, mais aussi pour des études fondamentales du graphène ou la propreté est d'une importance capitale. Par ailleurs, nos méthodes culminent dans une application commerciale soit celle d'une grille TEM à base de graphène. Nous présentons une analyse théorique de lecture optique interférométrique. Nous implémentons ensuite de la microscopie par force atomique afin de caractériser mécaniquement et rapporter la déflection à température pièce (jusqu'à 60◦C) de notre cellule, démontrant ainsi la validation du concept. Finalement, nous examinons et utilisons les propritétés thermiques du graphène hydrogéné afin de produire un microbolomètre avec une responsivité de R ≈ 10^5 V/W, ce qui est comparable avec des bolomètres commerciaux à base de Si.
Barnes, Mark. "Terahertz emission from ultrafast lateral diffusion currents within semiconductor devices". Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/363127/.
Pełny tekst źródłaSmith, Shane Raymond. "Construction and characterization of a multi-antenna terahertz time-domain spectroscopy setup". Thesis, Stellenbosch : Stellenbosch University, 2015. http://hdl.handle.net/10019.1/96733.
Pełny tekst źródłaENGLISH ABSTRACT: Recent progress in laser and semiconductor technology has allowed for far easier generation and measuring of coherent terahertz radiation, a previously difficult region in the radiation spectrum to coherently generate. Time based terahertz spectroscopy is a rather unique form of spectroscopy. Not only is it time based, but the electric field is measured instead of the intensity. This allows for the measurement of the complex refractive index. From this one can obtain certain details of the structure and environment of the sample being studied. A terahertz time-domain spectroscopy setup was constructed during this project. This setup used low temperature grown GaAs photoconductive antennae, with multiple antenna size options available for both the receiving and transmitting antennae. After the construction and alignment of this setup, the antennae were characterized. Lastly measurements were performed on the background, sugar and silicon to demonstrate the capabilities of the system. It was found that the measured terahertz electric field amplitude increased with the intensity of the pump pulse and that the amplitude of the measured terahertz electric field was dependent on the polarization of the pump pulse. As the size of the antenna was increased so too did the amplitude of the measured electric field and conversely the bandwidth of the measured terahertz electric field decreased with the increase of antenna size. This held true for both the transmitting and receiving antennae.
AFRIKAANSE OPSOMMING: Danksê onlangse tegnologiese onwikkelings in lasers en halfgeleier het dit veel makliker geraak om terahertz straling te genereer wat fase samehangendheid toon. Voor hierdie ontwikkelings was straling in hierdie spektrale gebied moeilik om te genereer op ’n wyse wat fase samehangendheid toon. Tyd verwante terahertz spektroskopie is taamlik uniek, aangesien die metings in tyd geneem word en die elektriese veld amplitude word pleks van die intensiteit gemeet. Een van die voordele van hierdie metode is dat dit toelaat vir die meeting van die komplekse brekingsindeks van monsters. Dit is moontlik om van die komplekse brekingsindeks strukturele en omgewings eienskappe van die monster af te lei. Gedurende die projek was ’n tyd verwante terahertz spektroskopie sisteem gebou wat gebaseer was op lae temperatuur gegroeide GaAs foto-geleidende antennas. Die sisteem bevat vier antennas van verskillende groottes aan beide die sender en ontvanger kant. Die antennas was gekarakteriseer na die bou en belyning van die terahertz sisteem en meetings was gedoen op die agtergrond, suiker en silikon om die sisteem se vermoë te demonstreer. Dit was gevind dat die amplitude van die gemete terahertz elektriese veld groter geraak het soos die intensiteit van die pomp puls verhoog was en dat die die amplitude van die gemete terahertz electriese veld afhanklik was van die polarisasie van die pomp puls. Die amplitude van van die gemete terahertz elektriese veld het gegroei met die grootte van die antenna, maar hoe groter die antenna geraak het, hoe kleiner was die bandwydte van die gemete terahertz elektriese veld. Hierdie was die geval vir beide die sender en ontvanger antennas.
Książki na temat "Terahertz electronics"
Rieh, Jae-Sung. Introduction to Terahertz Electronics. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-51842-4.
Pełny tekst źródłaKiyomi, Sakai, red. Terahertz optoelectronics. Berlin: Springer, 2005.
Znajdź pełny tekst źródłaMaxim, Ryzhii, i Ryzhii Victor, red. Physics and modeling of tera-and nano-devices. Singapore: World Scientific, 2008.
Znajdź pełny tekst źródłaNATO Advanced Research Workshop on New Directions in Terahertz Technology (1996 Castéra-Verduzan, France). New directions in terahertz technology. Dordrecht: Kluwer Academic Publishers, 1997.
Znajdź pełny tekst źródłaInternational, Conference on Terahertz Electronics (8th 2000 Darmstadt Germany). THz Conference 2000: 8th International Conference on Terahertz Electronics, 28-29 September 2000. Berlin: VDE-Verlag, 2000.
Znajdź pełny tekst źródła1943-, Ulaby Fawwaz T., Kukkonen Carl A, United States. Office of Aeronautics and Space Technology. i Center for Space Microelectronics Technology (Jet Propulsion Laboratory), red. Proceedings of the Third International Symposium on Space Terahertz Technology, March 24-26, 1992, University of Michigan, Ann Arbor, Michigan. [Washington, DC: National Aeronautics and Space Administration, 1992.
Znajdź pełny tekst źródła1943-, Ulaby Fawwaz T., Kukkonen Carl A, United States. Office of Aeronautics and Space Technology. i Center for Space Microelectronics Technology (Jet Propulsion Laboratory), red. Proceedings of the Third International Symposium on Space Terahertz Technology, March 24-26, 1992, University of Michigan, Ann Arbor, Michigan. [Washington, DC: National Aeronautics and Space Administration, 1992.
Znajdź pełny tekst źródłaJennifer, Hwu R., i Society of Photo-optical Instrumentation Engineers., red. Terahertz and gigahertz electronics and photonics III: 25-26 January 2004, San Jose, California, USA. Bellingham, Wash. USA: SPIE, 2004.
Znajdź pełny tekst źródłaP, Sadwick Laurence, Linden Kurt J i Society of Photo-optical Instrumentation Engineers., red. Terahertz and gigahertz electronics and photonics VI: 21-22 January 2007, San Jose, California, USA. Bellingham, Wash: SPIE, 2007.
Znajdź pełny tekst źródłaJennifer, Hwu R., Linden Kurt J i Society of Photo-optical Instrumentation Engineers., red. Terahertz and gigahertz electronics and photonics IV: 23-25 January 2005, San Jose, California, USA. Bellingham, Wash., USA: SPIE, 2005.
Znajdź pełny tekst źródłaCzęści książek na temat "Terahertz electronics"
Feiginov, Michael, Ramón Gonzalo, Itziar Maestrojuán, Oleg Cojocari, Matthias Hoefle i Ernesto Limiti. "THz Electronics". W Semiconductor Terahertz Technology, 254–303. Chichester, UK: John Wiley & Sons, Ltd, 2015. http://dx.doi.org/10.1002/9781118920411.ch6.
Pełny tekst źródłaHirakawa, K. "Terahertz Spectroscopy of Nanostructures". W Mesoscopic Physics and Electronics, 96–103. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-71976-9_13.
Pełny tekst źródłaRieh, Jae-Sung. "Introduction". W Introduction to Terahertz Electronics, 1–17. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_1.
Pełny tekst źródłaRieh, Jae-Sung. "THz Sources and Related Topics". W Introduction to Terahertz Electronics, 19–93. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_2.
Pełny tekst źródłaRieh, Jae-Sung. "THz Detectors and Related Topics". W Introduction to Terahertz Electronics, 95–161. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_3.
Pełny tekst źródłaRieh, Jae-Sung. "THz Propagation and Related Topics". W Introduction to Terahertz Electronics, 163–237. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_4.
Pełny tekst źródłaRieh, Jae-Sung. "THz Optical Methods". W Introduction to Terahertz Electronics, 239–71. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_5.
Pełny tekst źródłaRieh, Jae-Sung. "THz Applications". W Introduction to Terahertz Electronics, 273–350. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-51842-4_6.
Pełny tekst źródłaShur, M. S., i V. Ryzhii. "Emerging Solid State Terahertz Electronics". W Terahertz Sources and Systems, 169–85. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0824-2_11.
Pełny tekst źródłaBožanić, Mladen, i Saurabh Sinha. "Getting Ready for Terahertz Electronics". W Lecture Notes in Electrical Engineering, 221–48. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-44398-6_7.
Pełny tekst źródłaStreszczenia konferencji na temat "Terahertz electronics"
Grigoriev, A. D. "Terahertz Electronics". W 2018 13th International Conference on Actual Problems of Electron Devices Engineering (APEDE). IEEE, 2018. http://dx.doi.org/10.1109/apede.2018.8542172.
Pełny tekst źródłaAuston, D. H., K. P. Cheung, J. A. Valdmanis i P. R. Smith. "Ultrafast Optical Electronics: From Femtoseconds to Terahertz". W Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.wa1.
Pełny tekst źródłaShur, Michael. "Plasma wave terahertz electronics". W 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008). IEEE, 2008. http://dx.doi.org/10.1109/icimw.2008.4665864.
Pełny tekst źródłavan der Weide, D. "All electronic terahertz spectroscopy". W Ultrafast Electronics and Optoelectronics. Washington, D.C.: OSA, 2003. http://dx.doi.org/10.1364/ueo.2003.wc2.
Pełny tekst źródłaSchmid, Christoph P., Dominik Peller, Fabian Langer, Stefan Schlauderer, Christoph Lange, Tyler Cocker, Jascha Repp i in. "Terahertz lightwave electronics and valleytronics". W Ultrafast Phenomena and Nanophotonics XXIII, redaktorzy Markus Betz i Abdulhakem Y. Elezzabi. SPIE, 2019. http://dx.doi.org/10.1117/12.2507634.
Pełny tekst źródłaLee, Thomas H. "Terahertz electronics: The last frontier". W ESSCIRC 2014 - 40th European Solid State Circuits Conference. IEEE, 2014. http://dx.doi.org/10.1109/esscirc.2014.6942017.
Pełny tekst źródłaShur, Michael. "Terahertz electronics for sensing applications". W 2011 IEEE Sensors. IEEE, 2011. http://dx.doi.org/10.1109/icsens.2011.6127011.
Pełny tekst źródłaShur, M. "Ballistic transport and terahertz electronics". W 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC). IEEE, 2010. http://dx.doi.org/10.1109/edssc.2010.5713680.
Pełny tekst źródłaLee, Thomas. "Terahertz electronics: The last frontier". W 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2012. http://dx.doi.org/10.1109/rfic.2012.6242219.
Pełny tekst źródłaLee, Thomas H. "Terahertz electronics: The last frontier". W ESSDERC 2014 - 44th European Solid State Device Research Conference. IEEE, 2014. http://dx.doi.org/10.1109/essderc.2014.6948750.
Pełny tekst źródłaRaporty organizacyjne na temat "Terahertz electronics"
Shur, Michael. Terahertz Plasma Wave Electronics. Fort Belvoir, VA: Defense Technical Information Center, czerwiec 2001. http://dx.doi.org/10.21236/ada398910.
Pełny tekst źródłaAllen, S. James. Non-Linear Terahertz Electronics with Self Organized Rare-Earth Arsenide Semi-Metal/Semiconductor Composites. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1996. http://dx.doi.org/10.21236/ada329713.
Pełny tekst źródłaShur, Michael S. Plasma Wave Electronic Terahertz Technology. Fort Belvoir, VA: Defense Technical Information Center, maj 2003. http://dx.doi.org/10.21236/ada414495.
Pełny tekst źródłaLuo, Liang. Ultrafast terahertz electrodynamics of photonic and electronic nanostructures. Office of Scientific and Technical Information (OSTI), styczeń 2015. http://dx.doi.org/10.2172/1342531.
Pełny tekst źródłaVAN DER Weide, D. W. Device Measurement and Modeling System for Electronic Terahertz Sensing. Fort Belvoir, VA: Defense Technical Information Center, styczeń 2003. http://dx.doi.org/10.21236/ada431028.
Pełny tekst źródłaMani, Ramesh G. Terahertz and Microwave Devices Based on the Photo-Excited Low Dimensional Electronic System. Fort Belvoir, VA: Defense Technical Information Center, marzec 2015. http://dx.doi.org/10.21236/ada622950.
Pełny tekst źródłaBooske, John H. Fundamental Studies of Electronic Properties of Materials and Devices for High Power, Compact Terahertz Vacuum Electron Devices. Fort Belvoir, VA: Defense Technical Information Center, grudzień 2011. http://dx.doi.org/10.21236/ada563593.
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