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Artykuły w czasopismach na temat „Temperature dependent electrical transport”

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Data publikacji: 6 września 2023

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1

Sallam, M. M., B. A. El-Sayed, and A. A. Abdel-Shafi. "The temperature dependent electrical transport in biphenyl derivatives." Current Applied Physics 6, no. 1 (2006): 71–75. http://dx.doi.org/10.1016/j.cap.2004.12.006.

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2

Wu, H. Y., W. Wang, and W. J. Lu. "Temperature-dependent electrical transport mechanism in amorphous Ge2Sb2Te5films." physica status solidi (b) 253, no. 9 (2016): 1855–60. http://dx.doi.org/10.1002/pssb.201600045.

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3

VAISH, RAHUL, and KALIDHINDI B. R. VARMA. "ELECTRICAL TRANSPORT STUDIES IN 3Na2O–6.5B2O3 GLASSES." Journal of Advanced Dielectrics 01, no. 03 (2011): 331–36. http://dx.doi.org/10.1142/s2010135x11000355.

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Transparent 3Na2O–6.5B2O3 (NBO) glasses were fabricated via the conventional melt-quenching technique. X-ray powder diffraction (XRD) combined with Differential Scanning Calorimetric (DSC) studies carried out on the as-quenched samples confirmed their amorphous and glassy nature, respectively. The frequency and temperature dependent of the dielectric constant, electric modulus and electrical conductivity of the transparent NBO glasses were investigated in the 100 Hz–10 MHz frequency range. The electrical modulus and conductivity data have been rationalized using Jonscher's universal law. The bulk dc conductivity at various temperatures was extracted from the electrical relaxation data. The activation energy associated with dc conductivity is 0.52 ± 0.01eV, which is ascribed to the motion of Na+ ions in the glass matrix.
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4

Muchharla, Baleeswaraiah, T. N. Narayanan, Kaushik Balakrishnan, Pulickel M. Ajayan, and Saikat Talapatra. "Temperature dependent electrical transport of disordered reduced graphene oxide." 2D Materials 1, no. 1 (2014): 011008. http://dx.doi.org/10.1088/2053-1583/1/1/011008.

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5

Sinha, S., P. L. Srivastava, and R. N. Singh. "Temperature-dependent structure and electrical transport in liquid metals." Journal of Physics: Condensed Matter 1, no. 9 (1989): 1695–705. http://dx.doi.org/10.1088/0953-8984/1/9/014.

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6

Li, Zhen, Yongsen Han, Ji Liu, Daomin Min, and Shengtao Li. "Investigation of temperature-dependent DC breakdown mechanism of EP/TiO2 nanocomposites." Applied Physics Letters 121, no. 5 (2022): 052901. http://dx.doi.org/10.1063/5.0097351.

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In dielectric science, the electrical breakdown strength of a polymeric material significantly decreases with elevated temperatures, which restricts the development of advanced electrical and electronic applications toward miniaturization. In the present study, to clarify the temperature-dependent DC breakdown mechanisms of epoxy resin (EP)/TiO2 nanocomposites, the effects of nanoparticle incorporation and temperature on charge transport and molecular chain dynamics were studied. The results indicate that space charge accumulation and electric field distortion are reduced by nanoparticle incorporation to enhance the deep trap level, while space charge accumulation, electric field distortion, and molecular displacement are all accelerated as temperature increases. To further investigate the influence of carrier traps and molecular chain dynamics on temperature-dependent breakdown, a DC breakdown simulation model that involves bipolar charge transport, molecular chain dynamics, and breakdown criterion equations is established. The calculated breakdown strengths of EP/TiO2 nanocomposites show great accordance with the experimental results, which indicates that temperature-dependent DC breakdown mechanisms are dominated by the synergetic effects of carrier traps and segment chain dynamics. Through the analysis of the breakdown model, a transition of the dominant mechanism (from segment chain to backbone dynamics) near the glass-transition temperature for DC breakdown of EP/TiO2 nanocomposites is discovered.
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7

Park, Jae Young, Hwangyou Oh, Ju-Jin Kim, and Sang Sub Kim. "The temperature-dependent electrical transport mechanism of single ZnO nanorods." Nanotechnology 17, no. 5 (2006): 1255–59. http://dx.doi.org/10.1088/0957-4484/17/5/016.

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8

Sahu, A. K., S. K. Satpathy, and Banarji Behera. "Dielectric and frequency-dependent transport properties of lanthanum-doped bismuth ferrite." Journal of Advanced Dielectrics 09, no. 04 (2019): 1950031. http://dx.doi.org/10.1142/s2010135x19500310.

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Polycrystalline samples of Bi[Formula: see text]LaxFeO3 [[Formula: see text], 0.6, 0.7 and 0.8] were synthesized through high temperature solid state reaction method. The structural studies of the compounds were done using X-ray diffraction technique. Dielectric constant and dielectric loss were studied for various frequencies (100[Formula: see text]Hz–104[Formula: see text]Hz) at different temperatures. The temperature-dependent non-Debye type relaxation process was suggested in the materials from the analysis of frequency-dependent electrical data at different temperatures. Temperature dependence of dc and ac conductivity at various frequencies showed negative temperature coefficient of resistance (NTCR) behavior. The frequency dependence of ac conductivity at different temperatures obeyed Jonscher’s universal power law. The temperature dependence of dc and ac conductivity was fitted to Arrhenius equation. The activation energies at different temperature ranges were calculated to know the charge species involved in the conduction process.
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9

Hui, Zhenzhen, Xuzhong Zuo, Longqiang Ye, Xuchun Wang, and Xuebin Zhu. "Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties." Materials 13, no. 2 (2020): 417. http://dx.doi.org/10.3390/ma13020417.

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Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature range of 5–350 K, all samples exhibited semiconductor-like properties with dρ/dT < 0. For the range above and below the Néel temperature, the resistivity can be fitted by the thermal activation model and the two-dimensional weak localization (2D-WL) model, respectively. The ultra-low magnetoresistance at a low temperature under high magnetic fields with a large zero-field sensitivity was observed in the CrN thin films. The zero-field sensitivity can be effectively tuned to 10−2 K−1 at 5 K with a magnetoresistance of less than 1% at 2 K under 14 T by reasonably controlling the thickness.
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10

Zhang, Tong, Liuan Li, and Jin-Ping Ao. "Temperature-dependent electrical transport characteristics of a NiO/GaN heterojunction diode." Surfaces and Interfaces 5 (December 2016): 15–18. http://dx.doi.org/10.1016/j.surfin.2016.08.004.

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11

Thakur, Vanita, Anupinder Singh, A. M. Awasthi, and Lakhwant Singh. "Temperature dependent electrical transport characteristics of BaTiO3 modified lithium borate glasses." AIP Advances 5, no. 8 (2015): 087110. http://dx.doi.org/10.1063/1.4928339.

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12

Gao, Jia, and Yueh-Lin Lynn Loo. "Temperature-Dependent Electrical Transport in Polymer-Sorted Semiconducting Carbon Nanotube Networks." Advanced Functional Materials 25, no. 1 (2014): 105–10. http://dx.doi.org/10.1002/adfm.201402407.

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13

Campos, M. "Electrical Transport Properties of Doped Poly (p-phenylene)." Polymers and Polymer Composites 11, no. 5 (2003): 407–14. http://dx.doi.org/10.1177/096739110301100506.

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An experimental study of the temperature dependent dc electrical conductivity of doped poly (p-phenylene) in the range of 50-300 K has been presented. The results have been analyzed in the framework of some hopping models. We have observed that hopping models are not consistent with the temperature dependence of the conductivity data over the entire temperature range of measurement. We find that the logarithmic conductivity is proportional to Tβ, where the exponent β is independent of temperature. It is shown that the most probable transport process in this material for the entire range of temperature is due to multiphonon-assisted hopping of the charge carriers that interact weakly with phonons. The parameters obtained from the fits of the experimental data to this model appear reasonable.
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14

Baral, P. C. "Study of frequency- and temperature-dependent electrical transport in heavy fermion systems." International Journal of Modern Physics B 31, no. 12 (2017): 1750081. http://dx.doi.org/10.1142/s0217979217500813.

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This paper focuses on the frequency- and temperature-dependent electrical transport properties of heavy fermion (HF) systems. For this, Kondo lattice model (KLM) with Coulomb correlation between [Formula: see text]–[Formula: see text] electrons at the same site is considered. The Hamiltonian is treated in mean-field approximation (MFA) for the Kondo hybridization and Heisenberg-type interaction to get mean-field Hamiltonian and it is written after the Fourier transformation. The Hartree–Fock-type approximation is considered for the Coulomb repulsion between [Formula: see text]–[Formula: see text] electrons, the perturbed part of the Hamiltonian. The two Green’s functions for the conduction and [Formula: see text]-electrons are calculated to define the self-energy. Then the frequency- and temperature-dependent optical conductivity and resistivity are calculated by using the Kubo’s formula within the linear dynamical response approach. They are studied by varying the model parameters. The anomalies and results obtained are compared with experimental data.
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15

Patel, A. B., N. K. Bhatt, B. Y. Thakore, P. R. Vyas, and A. R. Jani. "The temperature-dependent electrical transport properties of liquid Sn using pseudopotential theory." Molecular Physics 112, no. 15 (2014): 2000–2004. http://dx.doi.org/10.1080/00268976.2013.877169.

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16

Singh, Deependra Kumar, Rohit Pant, Basanta Roul, Arun Malla Chowdhury, Karuna Kar Nanda, and Saluru Baba Krupanidhi. "Temperature-Dependent Electrical Transport and Optoelectronic Properties of SnS2/p-Si Heterojunction." ACS Applied Electronic Materials 2, no. 7 (2020): 2155–63. http://dx.doi.org/10.1021/acsaelm.0c00362.

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17

Thakur, Sonika, Parminder Kaur, Kusum Devgan, and Lakhwant Singh. "Temperature Dependent Electrical Transport Characteristics of Polyaniline Films Modified with Gold nanoparticles." Materials Today: Proceedings 18 (2019): 1329–35. http://dx.doi.org/10.1016/j.matpr.2019.06.597.

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18

Roul, Basanta, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, et al. "Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes." Journal of Applied Physics 109, no. 4 (2011): 044502–044502. http://dx.doi.org/10.1063/1.3549685.

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19

BURKOV, A. T., E. BAUER, E. GRATZ, and R. RESEL. "THERMOPOWER AND ELECTRICAL RESISTIVITY OF LaxY1−xAl2 ALLOYS." International Journal of Modern Physics B 07, no. 01n03 (1993): 387–90. http://dx.doi.org/10.1142/s0217979293000822.

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The electronic transport theory predicts linear temperature dependences for the thermopower (S) and the electrical resistivity (ρ) at elevated temperatures. However, the experimental data for La x Y 1− x Al 2 alloys reveal nonlinear dependences for both, S(T) and ρ (T) . We relate this disagreement to the density of states (DOS) structure in the vicinity of the Fermi level. Based on the linearised Boltzmann transport equation, we obtain from the experimental temperature dependences of ρ and S an electron dependent function ϕ(ε), reflecting the energy dependence of DOS and that of scattering processes. In the scope of Mott's s-d model the 1/ϕ(ε) function is proportional to the DOS near the Fermi level. A comparison of the 1/ϕ(ε) function with available band structure calculations shows good agreement for YAl 2 and LaAl 2. In the case of alloys, the structure of DOS may cause a temperature dependence of the impurity contribution to the resistivity but has only a minor effect on S(T) at evelated temperatures.
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20

Jin, Seung Hyun, and Young Soo Lim. "Effect of Zn-Doping on the Phase Transition Behavior and Thermoelectric Transport Properties of Cu2Se." Korean Journal of Metals and Materials 58, no. 7 (2020): 466–71. http://dx.doi.org/10.3365/kjmm.2020.58.7.466.

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We report on the phase transition behavior and thermoelectric transport properties of Zn-doped Cu2Se. Cu2Se is comprised of nontoxic, low-cost and abundant elements, and has been attracting attention because of its very high thermoelectric performance, ZT, at high temperatures. Many studies have reported enhanced ZT in impurity doped Cu2Se, however, little is known about the effect of dopants on the phase transition behavior of Cu2Se. In this study, we prepared (Cu1-xZn)2Se (x = 0 ~ 0.03) compounds by spark plasma sintering, and investigated the phase transition behavior in terms of the temperature-dependent thermoelectric transport properties. Undoped Cu2Se consists of monoclinic α-Cu2Se and berzelianite at room temperature. However, the crystal structure of (Cu1-xZnx)2Se compounds is changed into a single phase of α-Cu2Se with increasing Zn content. As the Zn content increased, electrical conductivity decreased and Seebeck coefficient increased due to the donor role of Zn. The phase transition temperatures of the compounds were characterized as a function of Zn content, based on the temperature-dependent electrical conductivities and Seebeck coefficients. The phase transition temperature was increased by increasing Zn content, and it was attributed to the disappearance of the berzelianite phase whose phase transition temperature is lower than that of α-Cu2Se. Detailed effects of Zn-doping on both the phase transition behavior and thermoelectric transport properties were discussed.
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21

Mahmood, K., and Nadeem Sabir. "Interface-Controlled Carrier Transport in Metal-Lutetium Oxide-Metal Structures Deposited by Electron-Beam Evaporation Technique." MRS Advances 2, no. 44 (2017): 2373–78. http://dx.doi.org/10.1557/adv.2017.322.

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ABSTRACTNano-thin films of Lu2O3 with 80nm thickness have been deposited on metal-coated glass substrate in metal-insulator-metal (MIM) geometry by electron-beam evaporation technique. High field and temperature dependent electrical characterization on grown MIM structures have been investigated in symmetric electrode configuration using Al, Cr or Cu metals. The temperature dependent I-T characteristic features have been found to support the conduction mechanism across MIM systems to be an electrode-limited process except for Al-Lu2O3-Al device, which show Poole-Frenkel mechanism in high electric field region. The associated parameters such as activation energy (∆E), coefficient of barrier lowering (β) and effective height of Schottky barrier at zero biasing (Фo) have been evaluated at different values of temperature and electric field to further investigate the dominent conduction mechanism.
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22

Maffia, M., R. Acierno, E. Cillo, and C. Storelli. "Na(+)-D-glucose cotransport by intestinal BBMVs of the Antarctic fish Trematomus bernacchii." American Journal of Physiology-Regulatory, Integrative and Comparative Physiology 271, no. 6 (1996): R1576—R1583. http://dx.doi.org/10.1152/ajpregu.1996.271.6.r1576.

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Intestinal nutrient absorption in fish adapted to low temperature was investigated by isolating, with a Mg(2+)-precipitation procedure, brush-border membrane vesicles (BBMVs) from intestines of the Antarctic teleost Trematomus bernacchii. In particular, D-glucose transport was analyzed by measuring both 1) fluorescence changes of the electrical potential-sensitive dye 3,3'-diethylthiadicarbocyanine iodide [DiS-C2(5)] and 2) intravesicular uptake of D-[14C]glucose. Results demonstrated that transport of D-glucose across intestinal BBMs of the Antarctic fish is stimulated by the presence of a transmembrane Na+ gradient (out > in) and was specifically inhibited by phloridzin. Furthermore, Na(+)-dependent D-glucose uptake was strongly enhanced by the presence of an electrical potential (inside-negative) across the membrane. There was a marked difference in temperature dependence of Na(+)-sugar cotransport between the Antarctic fish and a temperate fish, such as the European yellow eel., Na(+)-dependent D-glucose uptake in T. bernacchii intestinal BBMV reached its maximal rate at -2-0 degree C (close to fish living temperature) and was exponentially inactivated by incubation at higher temperatures. Kinetic analysis of D-glucose influx indicated the presence of a single Na(+)-dependent carrier process (apparent maximal carrier-mediated influx = 0.233 +/- 0.009 nmol.mg protein-1.min-1; apparent half-saturation constant for carrier-mediated influx = 0.157 +/- 0.026 mmol/l) and a nonsaturable transfer component (apparent diffusional permeability of membrane to the sugar = 0.233 +/- 0.016 microliter.mg protein-1.min-1). The Na(+)-dependent carrier-mediated mechanism was specific for sugars, since it was partially inhibited by the presence in the extravesicular medium of other monosaccharides, but not by ascorbic acid or amino acids of different types. These data suggest that in the intestine of Antarctic fish luminal D-glucose transport takes place by a specific Na(+)-dependent electrogenic secondary active transport working well at subzero temperatures.
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23

Thakur, Seema, Vanita Thakur, Anumeet Kaur, and Lakhwant Singh. "Temperature dependent electrical transport behavior of (100-x)Bi2O3-x(BaTiO3) glass system." Solid State Sciences 121 (November 2021): 106749. http://dx.doi.org/10.1016/j.solidstatesciences.2021.106749.

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24

Gaewdang, T., and Ng Wongcharoen. "Temperature-dependent electrical transport characteristics of p-SnS/n-WO3:Sb heterojunction diode." IOP Conference Series: Materials Science and Engineering 383 (July 2018): 012006. http://dx.doi.org/10.1088/1757-899x/383/1/012006.

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25

Dogan, Hulya, and Sezai Elagoz. "Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes." Physica E: Low-dimensional Systems and Nanostructures 63 (September 2014): 186–92. http://dx.doi.org/10.1016/j.physe.2014.04.019.

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26

Khan, Hasan M., M. U. Islam, Yongbing Xu, et al. "Electrical transport properties and temperature-dependent magnetization behavior of TbZn-substituted Ca0.5Ba0.5Fe12O19 hexaferrites." Journal of Sol-Gel Science and Technology 78, no. 1 (2015): 151–58. http://dx.doi.org/10.1007/s10971-015-3907-x.

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27

Zhang, Xiao-Wen, Dan Xie, Jian-Long Xu, et al. "Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors." Carbon 93 (November 2015): 384–92. http://dx.doi.org/10.1016/j.carbon.2015.05.064.

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28

Mahmood, Aamir, and Asghari Maqsood. "Temperature and frequency-dependent electrical transport studies of manganese-doped zinc ferrite nanoparticles." Materials Science and Engineering: B 296 (October 2023): 116615. http://dx.doi.org/10.1016/j.mseb.2023.116615.

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29

Saron, K. M. A., M. R. Hashim, M. Ibrahim, M. Yahyaoui, and Nageh K. Allam. "Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices." RSC Advances 10, no. 55 (2020): 33526–33. http://dx.doi.org/10.1039/d0ra05973k.

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30

KUMAR, VINOD, RAJESH KUMAR, and RAVI KUMAR. "STRUCTURAL AND ELECTRICAL PROPERTIES OF LaCo1-xNixO3." International Journal of Modern Physics: Conference Series 22 (January 2013): 351–54. http://dx.doi.org/10.1142/s2010194513010350.

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We investigated the effect of Ni doping on the structural and electrical properties of LaCoO3 . Single phase LaCo1-xNixO3 (x = 0, 0.1, 0.3, 0.5) were synthesized using solid state reaction method. Space group, lattice constants and atomic positions were determined by Rietveld refinement of powder diffraction data. The unit cell parameters found to increase with Ni doping. Four-probe direct current conductivity measurements were also carried out to investigate transport behavior of compounds. Samples were found to exhibit temperature dependent semiconducting behavior. The drastic improvement of the room-temperature conductivity of doped samples with respect to the pure compound has been observed and explained in terms of decrease in band gap. The transport mechanism in different regions of temperature has been investigated by fitting Arrhenius and variable range hopping (VRH) models.
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31

Lim, Jungmoon, Gahyun Ahn, Inho Jeong, and Hyunwook Song. "Temperature-Dependent Charge Transport of Large-Area Molecular Junctions with PEDOT:PSS Electrodes." Science of Advanced Materials 12, no. 3 (2020): 333–36. http://dx.doi.org/10.1166/sam.2020.3645.

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We report on the temperature-dependent transport behaviors of large-area molecular junctions fabricated with poly-(3,4-ethylene-dioxythiophene) stabilized with polystyrene sulphonic acid (PEDOT:PSS) interlayer electrodes and the archetypal benzenethiol molecules. In this study, we investigated two different benzenethiol molecules: 4-methylbenzenethiol (MBT) and 1,4-benzenedithiol (BDT), which have the identical backbone structure but different top end-groups. The charge transport through the molecular junctions was dominated by distinct interfacial contact properties between the PEDOT:PSS electrodes and the component molecules. We also observed that the electrical characteristics of the MBT junctions are influenced by the PEDOT grain size, particularly depending on the annealing temperature.
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32

You, Li, Jiye Zhang, Shanshan Pan, et al. "Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe." Energy & Environmental Science 12, no. 10 (2019): 3089–98. http://dx.doi.org/10.1039/c9ee01137d.

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33

Khamaj, Jabril A. "Influence of ion irradiation on temperature dependent electrical transport behavior of thin graphite flakes." Materials Science-Poland 34, no. 2 (2016): 399–403. http://dx.doi.org/10.1515/msp-2016-0049.

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AbstractIn this article, the influence of ion irradiation on temperature dependent electrical transport characteristics of thin graphite flakes was investigated. Thin graphite flakes were exfoliated by mechanical exfoliation method. Scanning electron microscopy was used to study surface morphology of the graphite flakes. The resistance versus temperature studies revealed that the graphite flake not subjected to Ga+ ion-irradiation showed a perfect metallic behavior, while the graphite flake after ion-irradiation showed a semiconducting behavior. The current-voltage (I-V) characteristics of bare and ion-irradiated graphite flakes were investigated. The bare graphite flake showed an ohmic-type I-V characteristics representing metallic behavior, while the ion-irradiated graphite flake showed a non-linear type diode-like characteristics. The temperature-dependent conductance measurements of ion-irradiated graphite flake were also performed and discussed in detail. The effect of Ga+ ions on the electronic transport behavior of thin graphite flakes has been discussed based on the investigation results.
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34

Chakraverty, Mayank, and V. N. Ramakrishnan. "Temperature Dependent Carrier Transport in Hydrogenated Amorphous Semiconductors for Thin Film Memristive Applications." Materials Science Forum 1048 (January 4, 2022): 182–88. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.182.

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This paper demonstrates the transport of electron and hole carriers in two distinct hydrogenated amorphous semiconductor materials at different temperatures. Compared to crystalline materials, the amorphous semiconductors differ structurally, optically and electrically, hence the nature of carrier transport through such amorphous materials differ. Materials like hydrogenated amorphous silicon and amorphous IGZO have been used for the study of temperature dependent carrier transport in this paper. Simulation results have been presented to show the variation of free electron and hole concentration, trapped electron and hole concentration with energy at 300K for both the materials. The change in mobility with a change in the Fermi level has been plotted for different temperatures. The effect of temperature on Brownian motion mobility of electrons and holes in hydrogenated amorphous silicon and amorphous IGZO has been demonstrated towards the end of this paper.
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35

Maneesai, Keerati, Kanyapak Silakaew, Sunisar Khammahong, et al. "Temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials." AIP Advances 13, no. 3 (2023): 035333. http://dx.doi.org/10.1063/5.0142476.

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The temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk-reduced graphene oxide (rGO) prepared by a chemical reduction process were investigated in a temperature range of 310–475 K. The bulk rGO contained bipolar charge carriers with p-type to n-type switching at a temperature of 420 K. The materials illustrated a p-type characteristic in the temperature range of 310–420 K and n-type characteristic in the temperature range of 420–475 K. The charge transport mechanism was that of the graphene-derived 2D material in the p-type regime and governed by polaronic charge carriers.
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36

Abbas, Muhammad Sabbtain, Pawan Kumar Srivastava, Yasir Hassan, and Changgu Lee. "Asymmetric carrier transport and weak localization in few layer graphene grown directly on a dielectric substrate." Physical Chemistry Chemical Physics 23, no. 44 (2021): 25284–90. http://dx.doi.org/10.1039/d1cp03225a.

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Temperature dependent electrical/magneto-transport measurements on few layer graphene grown directly onto dielectric substrates reveal weak localization, charge carrier asymmetry and phonon limited carrier mobility.
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37

Qaseem, S., M. Naeem, M. Ikram, and Nimra Niamat. "Effect of Reduced Dimensionality on the Magnetic and Transport Properties of Ca Doped Colossal Magnetoresistive Nanoparticles." JOURNAL OF NANOSCOPE (JN) 2, no. 1 (2021): 29–38. http://dx.doi.org/10.52700/jn.v2i1.26.

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Magnetic and electrical measurements of different nanosize Ca doped colossal magnetoresistive La0.7Ca0.3MnO3 are reported. The nanoparticles are synthesized with the modified citrate rout at different temperatures. X-ray diffraction measurements revealed three dominant peaks 23.040, 40.5170 .47.170, 58.660 which confirms the perovskite-like structure. The average crystallite size the nanoparticles are found to be 20 to 32nm. All the synthesized nanoparticles exhibit ferromagnetic ordering close to the phase transition temperatures. The size dependent magnetic and electrical transport properties are explored at different fields and temperature. Saturation magnetization is found to decrease with decreasing particle diameter. It is found that the particle size can tune the trend of coercive field. Coercive field first increases from 78 to 210 Oe and then decreases to 174 Oe. The electrical transition temperature is found to be 158 K for 20nm particle. Oxygen deficiency in such system generally reduces Mn4+ to Mn3+ to keep the charge neutrality of the structure and hence it destroys the conduction path ways to mobile electrons, at least in long range, and thus insulating behavior becomes more prominent in the larger temperature range. The trend at lower temperature attribute to the coulomb blockade.
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38

Das, B., A. Basu, J. Das, and D. P. Bhattacharya. "Piezoelectric interaction in controlling the effective electron temperature and the non-ohmic mobility characteristics in GaN and other III–V compounds at low lattice temperature." Canadian Journal of Physics 95, no. 2 (2017): 167–72. http://dx.doi.org/10.1139/cjp-2016-0304.

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In a compound semiconductor that lacks inversion symmetry, the free electrons interact simultaneously with the piezoelectric and acoustic phonons. This combined interaction principally controls the electrical transport at low lattice temperatures. Again, at low temperatures, the electrons in some of the compounds may be significantly perturbed for comparatively low fields, say, even for a fraction of a Vcm−1 or so, which effectively seems to be high enough, and the material exhibits electrical nonlinearity. Such a perturbed ensemble then attains a field dependent effective electron temperature Te, which exceeds the lattice temperature TL. The relative importance of the piezoelectric interaction in controlling the field dependence of the effective electron temperature, and therefrom, the non-ohmic mobility characteristics have been analyzed here under the condition of low lattice temperature. The numerical results obtained for InSb, InAs, and GaN are studied in detail. When compared with the experiments, the results here seem to give the same qualitative picture with respect to the variation of the non-ohmic mobility with the electric field for the indium compounds. The results, being interesting, stimulate further work in the same field.
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39

Kabir, Muhammad Salahuddin, Eli Powell, Robert G. Manley, and Karl D. Hirschman. "Intrinsic Channel Mobility Associated with Extended State Transport in IGZO TFTs." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1260. http://dx.doi.org/10.1149/ma2022-02351260mtgabs.

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There is wide variation in the understanding of the interaction and/or independence of channel mobility and charge trapping in IGZO TFTs. A new interpretation of transport behavior proposes an intrinsic channel mobility with distinctive temperature dependence. Bottom-gate TFTs were fabricated with a 50 nm IGZO film sandwiched between a 50 nm gate oxide and a 50 nm passivation oxide layer. The working metal was molybdenum for the gate electrode and source/drain contacts. A passivation anneal was done and a capping layer was added to promote electrical stability; full process details are provided in a previous report. Devices were tested using a Lakeshore cryogenic probe station, with transfer characteristic measurements taken from room temperature to below 100 K. Electrical measurements made on long-channel devices (L = 12 µm) has revealed temperature-dependent behavior that is not explained by existing TCAD models employed for defect states and carrier mobility. An IGZO TFT device model has been recently developed using Silvaco Atlas, which accounts for the role of donor-like oxygen vacancy defects, acceptor-like BTS, acceptor-like interface traps, and a temperature-dependent intrinsic channel mobility. The model demonstrates a remarkable match to transfer characteristics measured at T = 150 K to room temperature. The temperature-dependent mobility follows a power-law relationship resembling behavior consistent with ionized defect scattering; the source of which is proposed. Details of the material and device model, and associated defect distribution parameters will be presented. Figure 1
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40

Feng, Tao, Liping Li, Zhe Lv, Baoyun Li, Yuelan Zhang, and Guangshe Li. "Temperature‐dependent electrical transport behavior and structural evolution in hollandite‐type titanium‐based oxide." Journal of the American Ceramic Society 102, no. 11 (2019): 6741–50. http://dx.doi.org/10.1111/jace.16520.

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AHMED, N., A. KHAN, and M. HUSSAIN. "NUMERICAL INVESTIGATION OF CURRENT TRANSPORT PROPERTIES OF FUTURE GENERATION DEVICE UNDER HIGHLY SENSITIVE TEMPERATURE." Digest Journal of Nanomaterials and Biostructures 15, no. 2 (2020): 399–406. http://dx.doi.org/10.15251/djnb.2020.152.399.

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In present research, current-transport mechanism in future generation devices like Schottky diodes under highly sensitive temperature was investigate through the mathematical approach. Typical thermionic emission model and Cheung function were taking into account for analysis of transportation mechanism in a Schottky diode in forward bias. Different electrical parameters were calculated for analysis of temperature variation effect. Simulation of electrical parameters was performed via MATLAB under the sensitive temperature range from 300K-1000K. Obtained results showed that barrier height and ideality factor are strongly temperature dependent. The barrier height was inversly proportional while the ideality factor was directly proportional to the temperature.
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42

Wang, Jun Nan, Lin Wang, Huan Huan Ji, et al. "Effects of the Substrate Temperature on the Structure and Properties of Cd1-xMnxTe Films." Key Engineering Materials 633 (November 2014): 269–72. http://dx.doi.org/10.4028/www.scientific.net/kem.633.269.

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Cd1-xMnxTe (CdMnTe) can be a good candidate for gamma and X-ray detection because of its wide band-gap, high resistivity, and good electro-transport properties. Polycrystalline CdMnTe films were grown by closed-space sublimation method on glasses at different substrate temperatures. In this paper, substrate temperature dependent surface morphology, chemical composition, structural and electrical properties of CdMnTe films are investigated systematically.
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43

Wagner, Michael Florian Peter, Kay-Obbe Voss, Christina Trautmann, and Maria Eugenia Toimil Molares. "Tailored Bismuth Nanowires for Size-Dependent Transport Studies." ECS Meeting Abstracts MA2022-02, no. 23 (2022): 981. http://dx.doi.org/10.1149/ma2022-0223981mtgabs.

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Bismuth nanowires are excellent model systems to investigate the interplay of various size-dependent transport phenomena relevant for applications in thermoelectrics, spintronics or catalytics. Due to the large Fermi wavelength (lFermi~40 nm) and mean free paths of charge carriers (le and lph ~100 nm) in bismuth at room temperature, the influence of size-effects on the transport properties can be observed on nanowires of rather large diameters. Furthermore, these properties are also influenced by the fact that bismuth belongs to the class of topological insulator materials that exhibit special charge carrier transport on the material surface linked to topological states. To better understand the transport behavior, it is of utmost importance to control the nanowire properties like surface-to-volume ratio, wire diameter and wire morphology, crystal structure, material composition and, in case of nanowire assemblies, their relative alignment to one another. We present the synthesis of parallel and interconnected assemblies of bismuth nanowires with both cylindrical and conical geometry, and sizes ranging between 50 and 3500 nm. The wires are produced by electrodeposition in polymeric etched ion-track templates applying pulsed plating and an aqueous electrolyte of bismuth chloride. The electrodeposition process as well temperature-dependent Seebeck coefficient and electrical resistance measurements as a function of nanowire size and geometry will be discussed. Figure 1
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44

Hajra, Sugato, Sushrisangita Sahoo, Twinkle Mishra, Pravat Rout, and Ram Choudhary. "Studies of dielectric and electrical transport characteristics of BaTiO3-BiFeO3-CaSnO3 ternary system." Processing and Application of Ceramics 12, no. 2 (2018): 164–70. http://dx.doi.org/10.2298/pac1802164h.

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In the present paper, the ternary system 0.90 BaTiO3-0.07 BiFeO3-0.03 CaSnO3 (referred as BTO-BFO-CSO-3) near the morphotropic phase boundary (MPB) was synthesized via a cost effective mixed-oxide route and sintered at 1050?C. Phase composition analysis confirms that the sample crystallizes in orthorhombic phase with few impurity peaks. Room temperature Raman spectrumdepicts the phonon peaks characteristic for BTO-BFOCSO-3 structure. Microstructural examination by scanning electron microscope shows the uniform distribution of grains on the surface of the density sample. The capacitive and resistive properties at different frequencies and temperatures were obtained by modulus and impedance spectroscopy. The non-Debye relaxation mechanism is highlighted by the impedance analysis. The electrical properties associated with the impedance of the prepared sample are found to be dependent on temperature and frequency. The transport properties follow the Arrhenius equation and the activation energy is calculated for the sample.
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45

Zhang, Xiwei, Jiansheng Jie, Xiujuan Zhang, and Fengjun Yu. "Bismuth-catalyzed and doped p-type ZnSe nanowires and their temperature-dependent charge transport properties." Journal of Materials Chemistry C 4, no. 4 (2016): 857–62. http://dx.doi.org/10.1039/c5tc02853a.

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Simultaneous ZnSe nanowire growth and p-type doping is realized in one step by using Bi as the catalyst and dopant via chemical vapor deposition. Temperature-dependent electrical measurements are used for understanding the charge transport mechanism and the doping effect.
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46

Suhak, Yuriy, Dmitry Roshchupkin, Boris Redkin, et al. "Correlation of Electrical Properties and Acoustic Loss in Single Crystalline Lithium Niobate-Tantalate Solid Solutions at Elevated Temperatures." Crystals 11, no. 4 (2021): 398. http://dx.doi.org/10.3390/cryst11040398.

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Electrical conductivity and acoustic loss Q−1 of single crystalline Li(Nb,Ta)O3 solid solutions (LNT) are studied as a function of temperature by means of impedance spectroscopy and resonant piezoelectric spectroscopy, respectively. For this purpose, bulk acoustic wave resonators with two different Nb/Ta ratios are investigated. The obtained results are compared to those previously reported for congruent LiNbO3. The temperature dependent electrical conductivity of LNT and LiNbO3 show similar behavior in air at high temperatures from 400 to 700 °C. Therefore, it is concluded that the dominant transport mechanism in LNT is the same as in LN, which is the Li transport via Li vacancies. Further, it is shown that losses in LNT strongly increase above about 500 °C, which is interpreted to originate from conductivity-related relaxation mechanism. Finally, it is shown that LNT bulk acoustic resonators exhibit significantly lower loss, comparing to that of LiNbO3.
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47

Schmitt, Tobias W., Benedikt Frohn, Wilhelm Wittl, et al. "Anomalous temperature dependence of multiple Andreev reflections in a topological insulator Josephson junction." Superconductor Science and Technology 36, no. 2 (2022): 024002. http://dx.doi.org/10.1088/1361-6668/aca4fe.

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Abstract As a promising platform for unconventional superconductivity, Josephson junctions (JJs) of tetradymite topological insulators (TIs) and s-wave superconductors have been investigated in recent years. This family of TI materials, however, often suffers from spurious bulk transport, which hampers the observation of the exotic physics of their topological surface states. Thus, disentangling the transport mechanism of bulk and surface contributions in TI JJs is of high importance when investigating proximity induced superconductivity in those crystals. In this work, we add to the insights regarding these contributions by studying the temperature-dependent behaviour of a Bi2Te3-based JJ with transparent interfaces. In electrical transport measurements, we investigate differential conductance spectra of multiple Andreev reflections (MARs) and find a qualitative temperature-dependent change from peak features at low temperatures to dip features at higher ones. The observation of both kind of MAR patterns in a single JJ suggests contributions of diffusive bulk and ballistic surface states and links to a similar finding in the temperature dependence of the critical current. Our work advances the research of induced superconductivity in TIs and offers new avenues to study the induced superconductivity in the topological surface states of these materials.
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48

Yadav, Anjana, Kumar P. Chandra, Ajit R. Kulkarni, and Kamal Prasad. "Structural and Electric Properties of Ba-Fe-Ta-Na-Bi-Ti-O Ceramic System." Materials Science Forum 1074 (November 8, 2022): 53–59. http://dx.doi.org/10.4028/p-6902r9.

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The X-ray diffraction, microstructure, impedance, electric modulus, and ac-conductivity of Ba(Fe1/2Ta1/2)O3–(Na1/2Bi1/2)TiO3 solid-solutions were studied utilising a traditional high-temperature mixed-oxide technique. The phase-formations of the solid-solutions were determined utilising X-ray data, while SEM micrographs revealed a non-uniform dispersion of grains in the sample of unequal size (~1 – 20 mm). In all of the developed solid-solutions, the frequency (1Hz - 1MHz) dependence of imaginary and real parts of electric impedance in the temperature region of 50 and 500°C showed the NTCR character and hopping type of electrical conduction. The modulus spectrum variation was intrigued by the hopping mechanism for charge transport (temperature-dependent) in the samples with non-Debye type of behaviour. Besides, the low electrical conductivity of these solid-state solutions makes them ideal for industrial applications, particularly as capacitors.
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Maurya, Vishwajeet, Julien Buckley, Daniel Alquier, et al. "Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation." Energies 16, no. 14 (2023): 5447. http://dx.doi.org/10.3390/en16145447.

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We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured JR-VR-T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.
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50

REDDY, Y. S., P. KISTAIAH, and C. VISHNUVARDHAN REDDY. "EFFECT OF Ba SUBSTITUTION ON ELECTRICAL TRANSPORT AND MAGNETORESISTANCE OF La1.2Sr1.8Mn2O7." International Journal of Modern Physics B 23, no. 03 (2009): 447–60. http://dx.doi.org/10.1142/s0217979209049632.

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Polycrystalline samples of double layered (DL) manganite system La 1.2( Sr 1-x Ba x)1.8 Mn 2 O 7(0.0≤×≤0.4) were prepared by the sol-gel method. The anisotropic lattice expansion is observed with the substitution of Ba 2+ into Sr 2+ sites. The electrical resistivity and magnetoresistance (MR) measurements were carried out over the temperature range 4.2 K–300 K. The substitution of Ba results in the suppression of T IM , insulator-to-metal transition temperature. A low temperature upturn of resistivity is seen in all the samples of the system, which is attributed to the spin-glass-like transition. The conduction mechanism above T IM is explained by Mott variable range hopping (VRH) mechanism. The variation of MR with temperature and applied magnetic field is discussed. From the temperature dependent MR curves, it is observed that the large MR values are present over a wide temperature range and the maximum MR values occur at [Formula: see text]. The x=0.4 sample exhibits ~31% of MR with the application of a mere 0.4 T field at 5 K, which accounts for ~35% enhancement of MR of parent compound (~23% of MR% at 0.4 T at 5 K). The MR — H data is fitted to the power law ρ = ρ0-αHn, and it is found that the low temperature MR varies as square root of the applied magnetic field, as expected in conventional metals.
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